DD118336A1 - Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie - Google Patents

Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie

Info

Publication number
DD118336A1
DD118336A1 DD185436A DD18543675A DD118336A1 DD 118336 A1 DD118336 A1 DD 118336A1 DD 185436 A DD185436 A DD 185436A DD 18543675 A DD18543675 A DD 18543675A DD 118336 A1 DD118336 A1 DD 118336A1
Authority
DD
German Democratic Republic
Prior art keywords
semiconductor
transmission line
improved transmission
arrangement
diode
Prior art date
Application number
DD185436A
Other languages
German (de)
English (en)
Inventor
Gert Beister
Michael Haubold
Gerfried Heise
Klaus Rogge
Original Assignee
Gert Beister
Michael Haubold
Gerfried Heise
Klaus Rogge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gert Beister, Michael Haubold, Gerfried Heise, Klaus Rogge filed Critical Gert Beister
Priority to DD185436A priority Critical patent/DD118336A1/xx
Priority to DE2603935*[A priority patent/DE2603935A1/de
Publication of DD118336A1 publication Critical patent/DD118336A1/xx
Priority to IT48835/76A priority patent/IT1058060B/it
Priority to CS762262A priority patent/CS201113B1/cs
Priority to FR7610880A priority patent/FR2308207A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H10D8/75—Tunnel-effect PN diodes, e.g. Esaki diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
DD185436A 1975-04-15 1975-04-15 Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie DD118336A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DD185436A DD118336A1 (de) 1975-04-15 1975-04-15 Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie
DE2603935*[A DE2603935A1 (de) 1975-04-15 1976-02-03 Halbleiteranordnung, insbesondere halbleiterdiode mit verbesserter durchlasskennlinie
IT48835/76A IT1058060B (it) 1975-04-15 1976-04-01 Perfezionamento nei dispositivi a semiconduttori
CS762262A CS201113B1 (en) 1975-04-15 1976-04-06 Semiconductor device particularly the semiconductor diode with ammeliorated permeability characteristics
FR7610880A FR2308207A1 (fr) 1975-04-15 1976-04-13 Element semiconducteur, en particulier diode semiconductrice a caracteristique de conduction amelioree

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD185436A DD118336A1 (de) 1975-04-15 1975-04-15 Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie

Publications (1)

Publication Number Publication Date
DD118336A1 true DD118336A1 (de) 1976-02-20

Family

ID=5499938

Family Applications (1)

Application Number Title Priority Date Filing Date
DD185436A DD118336A1 (de) 1975-04-15 1975-04-15 Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie

Country Status (5)

Country Link
CS (1) CS201113B1 (Direct)
DD (1) DD118336A1 (Direct)
DE (1) DE2603935A1 (Direct)
FR (1) FR2308207A1 (Direct)
IT (1) IT1058060B (Direct)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2719457A1 (de) * 1977-04-30 1978-11-02 California Linear Circuits Inc Halbleiter-uebergang

Also Published As

Publication number Publication date
DE2603935A1 (de) 1976-10-28
CS201113B1 (en) 1980-10-31
FR2308207B3 (Direct) 1979-01-05
FR2308207A1 (fr) 1976-11-12
IT1058060B (it) 1982-04-10

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