CS254161B1 - Method of semiconductor plate's first masking during semiconductor component production - Google Patents

Abstract

The solution relates to the method of first masking semiconductor thatch in semiconductor manufacturing] diode-type components and solutions a consistent alignment of the areal layout semiconductor) thatch with metal positioning which is on a semiconductor thatch with flat dividing selectively vacuum through the holes in the mechanical shutter. nature The solution lies in the fact that the metal first is selective vacuuming on a semiconductor dummy thatch. This dummy then serves as a pattern for setting the first masking position functional semiconductor thatch. Finally the first functional mask is performed semiconductor thatch, with the masking position and hence the location of the area breakdown a solid semiconductor dock remains set according to dummy semiconductor thatch with selective vacuum-deposition metal.

Description

3 4 254181

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for the first " masking " of a semiconductor diode-type component, and to the attenuation of the positioning of a semiconductor ' in the mechanical] aperture. Part of the semiconductor manufacturing process] is the deposition of the metal contact surface of the semiconductor] thatch. The metal rule layer is not desirable on the entire surface semiconductor, and therefore either the homogeneous metal deposition and the photo-lithography operations are selected in which the metal layer is removed from certain areas, but the metal deposition is metal-depleted. the layer only extends to certain areas on the semiconductor board.

The disadvantage of the homogeneously deposition of metal and the photolithographic treatment of the superimposed layer is a complex process and a number of operations in which mechanical or chemical damage to the semi-conductor structure can occur. The selective deposition can be achieved by deposition of the metal from the solution (chemically or galvanically) or by de-positioning in a vacuum through a mechanical screen which allows the deposition of the metal only on the sites where the mechanical screen has openings.

The disadvantage of the selective deposition of metal is the limited range of usable metals and the necessity of over-layering the heat further and chemically, while being able to; semiconductor structure can be damaged.

The selective deposition of metal in a vacuum through a mechanical orifice plate is a simple selective method of deposition, but is still used only when the semiconductor plate has no surface partitioning and mechanical positioning does not need to be aligned with this partitioning. The disadvantage of the selective deposition of the metal in the vacuum through the openings in the mechanical orifice is therefore that the bearing is applicable (for the positioning complexity) on the semiconductor plate with the flattening.

SUMMARY OF THE INVENTION The present invention is based on the method of first masking a semiconductor die for the production of a semiconductor diode-type component, wherein a selective vacuum deposition of metal is utilized through the openings in the mechanical diaphragm.

The method according to the invention is characterized in that, in the first step of the process, the metal is selectively extruded onto the semiconductor dummy. This dummy with the selectively doped metal then serves as a pattern for setting the position of the first masking of the functional semiconductor that is in the second step of the process. In the third step of the process, the first masking of the individual functional semiconductor plates takes place, and the positioning of the functional semiconductor plates remains set according to the semiconductor dummy type with selectively vacuum-bonded metal. As a result of this process, each non-masked functional semiconductor wedge has a position of a surface pattern identical to that of a metal that has been selectively vacuum-bonded to the semiconductor dummy. If, for such a functional semiconductor thatch, the metal is selectively overloaded under the same conditions in which the metal is selectively superimposed on the semiconductor dummy, the position of the metal is consistent with that of the functional semiconductor.

Thus, the advantage of the method of the first masking of the semiconductor dock according to the invention is that it allows the use of a selective vacuum de-positioning of the metal through the apertures in the mechanical cell on the semiconductor sheet. In a particular case, a 0 45 mm diameter silicon wafer is processed with two-line pads on the periphery (facets) at an angle of 90 ° to serve as finishing pads. Semiconductor dummy has the same dimensions as a functional semiconductor board.

The mechanical orifice plate is cut out from the 0.15 mma molybdenum sheet and has, like the semiconductor plate, a semiconductor dock stop plate. The semiconductor dummy is covered with a mechanical orifice with holes in the vacuum steaming device together with they press against the three stop pins and a good visible metal, for example, aluminum, is applied to them. Thereafter, the semiconductor dummy is placed in a photolithographic exposure apparatus where it is pushed to three stop pins and the position of the photolithographic mask is optically aligned with the metal dropper vapor deposited on the dummy. Half-set] photolithographic masks are included. The individual functionally semiconductor plates are then inserted into a photolithographic exposure device, where they are pushed by a stop pin and exposed through a set photolithographic mask. Functional semiconductor docking then undergoes additional technological operations, in which the required structure is formed. However, the positioning of the first camouflage blanking does not change and in the last operation, when the functional semiconductor that is blown through the openings in the mechanical shield contact metal, the position of the vaporized metal flats is in line with that of the contact areas of the semiconductor thatch.

Claims (1)

SUBJECT Method of first masking a semiconductor thatch in the manufacture of a semiconductor component using selective vacuum metal deposition characterized in that, in a first step, the metal is selectively vacuum deposited on a trap of a semiconductor thatch, in a second step a dummy semiconductor that is selectively vacuumed koVYNALEZU vom uses a functional semiconductor thatch first mask positioning, and a third functional semiconductor thatch masking is performed in a third step, wherein the masking position is set according to a dummy semiconductor thatch with a selectively vacuumed metal.