CS244934B2 - Thyristor with self protection against overvoltage - Google Patents

Thyristor with self protection against overvoltage Download PDF

Info

Publication number
CS244934B2
CS244934B2 CS833857A CS385783A CS244934B2 CS 244934 B2 CS244934 B2 CS 244934B2 CS 833857 A CS833857 A CS 833857A CS 385783 A CS385783 A CS 385783A CS 244934 B2 CS244934 B2 CS 244934B2
Authority
CS
Czechoslovakia
Prior art keywords
thyristor
region
control
main thyristor
amplification
Prior art date
Application number
CS833857A
Other languages
Czech (cs)
English (en)
Other versions
CS385783A2 (en
Inventor
Tsuneo Ogura
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of CS385783A2 publication Critical patent/CS385783A2/cs
Publication of CS244934B2 publication Critical patent/CS244934B2/cs

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
CS833857A 1982-06-30 1983-05-30 Thyristor with self protection against overvoltage CS244934B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57112943A JPS594075A (ja) 1982-06-30 1982-06-30 サイリスタ

Publications (2)

Publication Number Publication Date
CS385783A2 CS385783A2 (en) 1985-09-17
CS244934B2 true CS244934B2 (en) 1986-08-14

Family

ID=14599384

Family Applications (1)

Application Number Title Priority Date Filing Date
CS833857A CS244934B2 (en) 1982-06-30 1983-05-30 Thyristor with self protection against overvoltage

Country Status (5)

Country Link
US (1) US4646121A (de)
EP (1) EP0100136B1 (de)
JP (1) JPS594075A (de)
CS (1) CS244934B2 (de)
DE (1) DE3367701D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435548A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher innerer zuendverstaerkung
US5243205A (en) * 1989-10-16 1993-09-07 Kabushiki Kaisha Toshiba Semiconductor device with overvoltage protective function
US5883402A (en) * 1995-11-06 1999-03-16 Kabushiki Kaisha Toshiba Semiconductor device and protection method
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
EP1157424B1 (de) * 1999-02-22 2008-09-17 Infineon Technologies AG Verfahren zum einstellen der durchbruchspannung eines thyristors
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
DE19947028A1 (de) 1999-09-30 2001-04-12 Siemens Ag Thyristor mit Spannungsstoßbelastbarkeit in der Freiwerdezeit
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6462359B1 (en) 2001-03-22 2002-10-08 T-Ram, Inc. Stability in thyristor-based memory device
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6891205B1 (en) 2001-03-22 2005-05-10 T-Ram, Inc. Stability in thyristor-based memory device
SG124239A1 (en) * 2002-01-23 2006-08-30 Singapore Tech Aerospace Ltd Close proximity weapon id system
US6666481B1 (en) 2002-10-01 2003-12-23 T-Ram, Inc. Shunt connection to emitter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052447A (de) * 1962-09-15
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4079403A (en) * 1976-11-01 1978-03-14 Electric Power Research Institute, Inc. Thyristor device with self-protection against breakover turn-on failure
US4165517A (en) * 1977-02-28 1979-08-21 Electric Power Research Institute, Inc. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
JPS5437589A (en) * 1977-08-29 1979-03-20 Mitsubishi Electric Corp Semoconductor switching unit
JPS6016107B2 (ja) * 1978-08-23 1985-04-23 株式会社日立製作所 自己保護型半導体制御整流装置
JPS5641180A (en) * 1979-09-05 1981-04-17 Sumitomo Electric Industries Vessel for composite transport
JPS57109373A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
DE3367701D1 (en) 1987-01-02
US4646121A (en) 1987-02-24
EP0100136B1 (de) 1986-11-12
JPS594075A (ja) 1984-01-10
CS385783A2 (en) 1985-09-17
EP0100136A1 (de) 1984-02-08

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