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Způsob výroby výkonové diodové struktury
CS240040B1
Czechoslovakia
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English - Inventor
Jan May Jaroslav Satek Jaromir Louda Jiri Javurek Jaroslav Zamastil Jaroslav Homola
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- Předmět vynálezu240 040Způsob výroby výkonové diodové struktury, vyznačený tím , že křemíková deska s povrchem /opracovaným řezáním z monokrystalu křemíku se jednostranně oleptá, dále se provede difúze hliníku z vrstvy difuzantu naneseného na neoleptanou stranu křemíkové desky při teplotě 1250 £ 20° C po dobu maximálně 25 hod., poté následuje oboustranná difúze fosforu při teplotě 1200 až 1250° C po dobu maximálně 3 hodo, načež se křemíková deska spájí na straně nadífundované hliníkem s molybdenovou dilatační elektrodou pomocí hliníkové fólie nebo fólie na bázi hliník-křemík tloušťky 40 až 70<4un při teplotě 650 až 800 °C ve vakuu nebo ochranné atmosféře*