CS197943B1 - Method of covering the diodes with axial leads by the dielectric protective substance - Google Patents

Description

CZECHOSLOVAK SOCIALISTIC

REPUBLIC * (19) \ t

DESCRIPTION OF THE INVENTION

TO THE COPYRIGHT CERTIFICATE (61) (23) Show Priority (22) Enrolled 30 06 78 (21) PV 4319-78 197 943 (11) (Bl) (51) Int el. H 01 L 21/94

OFFICE OFFICE

AND DISCOVERIES (40) Published 31 08 79 (45) Published 01 6 82

The inventor of ŠVORC DUŠAN mg.

BARTOVIC VLADIMÍR ing., PIEŠŤANY (54) Method of covering diodes with dielectric protective material axial inlets 1

BACKGROUND OF THE INVENTION The present invention relates to a method for covering diodes with dielectric shielding axial inlets, particularly suitable for diodes with a semiconductor array.

The state of the art for the operation of this technological operation is: soldered HV columns (0.7 to 0.7 dimensions represent 24 to 26 systems in series with axial solder inlets of 0.6) are coated with a viscous dielectric protective material by hand in one piece so that the soldered HV chip of systems with soldered axial inlets is rotatably rotated on a rubber mat on which a viscous dielectric protective layer is applied.

This method of applying a dielectric protective material is labor intensive, labor-intensive, labor-intensive, low incremental failure due to the axial inlet deflection by manual rotation of the inlets.

These drawbacks are obviated by the method of covering the column of semiconductor systems with soldered axial inlets of the invention.

The essence of this method is that the pin of soldered semiconductor systems is compressed between two macular porous pads leaked with a viscous dielectric protective material. By shifting the upper macular porous cushion to the stationary 197 $ 43 2 197 943 of the lower macular porous cushion, a column of semiconductor systems rolled away, creating a uniform dielectric layer on the pinch of the bonded systems. The advantages of the invention are in higher labor productivity when assembling this technological operation. in reducing the lack of ductility as a result of rolling the bonded column of semiconductor systems when applying a viscous dielectric shielding material by rotating the brazed semiconductor system column by means of soft porous pads which only touch the column of soldered semiconductor systems. operation. An example of the method of the invention is shown in the accompanying drawing, which illustrates the individual phases of the column coating of the soldered semiconductor systems with a viscous dielectric protective material.

In Fig. 1, in the first phase, the pin 2 of the interconnected axial inlet semiconductor systems is laid on the lower porous porous pad 2 by the viscous dielectric protective material, the upper soft porous pad 1 being separated.

In Fig. 2, in the second phase, the upper dense porous paddle 1 is approached and pushes the sliver 2 of the soldered semiconductor systems into the top of the porous cushion 1 and the lower macular porous cushion J. Viscose is formed at the edges of the column 2 of the soldered semiconductor systems a dielectric wedge mass. By shifting the upper macular porous cushion 1 in the viscous porous cushion J, soaked with a viscous dielectric protective material, rolling of the column 2 of the soldered semiconductor systems and the viscous cage creates a uniform layer of viscous dielectric material on the pin 2 of the soldered semiconductor systems.

FIG. 3, in the third phase, after the upper macula porous cushion 1 has been removed, the upper macular porous cushion 2 is left with a pin 2, soldered with semiconductor systems with axially soldered inlets, covered with a uniform viscous dielectric mass.

A particular embodiment can be realized by inserting individual staples of soldered semiconductor systems with soldered axial inlets into a reservoir that allows the above mentioned method to be collected and thus enabling its efficient use for serial production.

The possibility of using this method is in serial production of HV blocks.

Claims (1)

OBJECT OF THE INVENTION Method of covering diodes with axial leads with dielectric protective tasot, suitable especially for diodes with soldered column of semiconductor systems, characterized in that the pin of soldered semiconductor systems is compressed and rolled between the upper poppy porous underlay and the lower poppy porous underlay.