CN87209309U - Silicon piezo-risistive baroceptor - Google Patents

Abstract

The utility model discloses a silicon piezo-resistance air pressure sensor, comprising a pipe cap, a replaceable base, an outside lead, a pressure guiding pipe, a diffused resistor, silicon cup chip and a silicon pad. The utility model has the advantages of simple structure and low cost, and the utility model is suitable for measurement of underground cable protection air pressure and pressure intensity of the noncorrosive gas and noncorrosive liquids.

Description

Silicon piezo-risistive baroceptor

The utility model relates to a kind of improved silicon piezoresistance type baroceptor, is used in the measurement of the measurement of underground cable protection air pressure and non-corrosive gas, liquid pressure especially.

Existing piezoresistive silicon sensor, complex structure, cost height.

It is low that task of the present utility model provides a kind of cost, simple in structure, can be convenient for measuring the silicon piezoresistance type baroceptor of gas, liquid pressure.

Task of the present utility model is finished as follows; By pipe cap, can cut down the silicon piezoresistance type baroceptor that pedestal, outer lead, pressure guiding pipe, diffusion resistance, silicon cup chip, silicon spacer are formed.The elastic membrane skin that it is characterized in that the silicon cup chip is manufactured with the electric bridge that diffusion resistance is formed, the silicon spacer pad is at silicon cup chip bottom and the impulse pore that can cut down pedestal, overlapping bonding, form the air pressure cavity, there is a reference pressure hole on silicon cup chip side, the aperture in reference pressure hole is stained with rubber diaphragm, the interior pressure point of diffusion resistance is connected with the outer lead end points, and with the silicon cup chip, the reference pressure hole encapsulates with pipe cap.

Be further described below in conjunction with accompanying drawing:

Fig. 1 is the synoptic diagram that diffusion resistance is formed electric bridge, and diffusion resistance 1,2,3,4 inner contacts 5,6,7,8,9,10 usefulness semiconductor fabrication process are made at silicon cup chip elastic membrane skin.

Fig. 2 is cut-away view, elastic membrane 1, the diffusion resistance 2 of silicon cup chip

Fig. 3 is the upward view of silicon cup chip

Fig. 4 is the front elevation (left side is looked, the right side is looked, backsight identical with front elevation) of silicon spacer

Fig. 5 is the vertical view (identical with upward view) of silicon spacer

Fig. 6 is silicon piezoresistance type baroceptor cut-open view, silicon cup chip 1, silicon spacer 2

Can be for pressure point and outer end points line 8, pipe cap 9 in pedestal 3, fairlead 4, outer lead 5, internal lead end points 6, the outer lead end points 7

Fig. 7 is a silicon piezoresistance type baroceptor upward view, outer lead 1,2,3,4,5,6,7, and impulse pore 8, reference pressure hole 9 can be for pedestal 10, fixed bolt hole 11

Claims (1)

1, a kind of by pipe cap, the silicon piezoresistance type baroceptor that can form for pedestal, outer lead, pressure guiding pipe, diffusion resistance, silicon cup chip, silicon spacer, the elastic membrane skin that it is characterized in that the silicon cup chip is manufactured with the electric bridge that diffusion resistance is formed, the silicon spacer pad the silicon cup chip bottom with can be for the impulse pore of pedestal, overlapping bonding, form the air pressure cavity, there is a reference pressure hole on silicon cup chip side, the interior pressure point that the aperture in reference pressure hole is stained with rubber diaphragm, diffusion resistance is connected with the outer lead end points, with the silicon cup chip, the reference pressure hole encapsulates with pipe cap.

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