CN86207853U - 聚偏氟乙烯薄膜激光辐射探测器 - Google Patents

聚偏氟乙烯薄膜激光辐射探测器 Download PDF

Info

Publication number
CN86207853U
CN86207853U CN198686207853U CN86207853U CN86207853U CN 86207853 U CN86207853 U CN 86207853U CN 198686207853 U CN198686207853 U CN 198686207853U CN 86207853 U CN86207853 U CN 86207853U CN 86207853 U CN86207853 U CN 86207853U
Authority
CN
China
Prior art keywords
absorber
radiation detector
pvdf film
type radiation
pvdf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN198686207853U
Other languages
English (en)
Inventor
王树铎
范良藻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sensing Technology Company Chinese Academy Of Sciences
Institute of Physics of CAS
Original Assignee
Sensing Technology Company Chinese Academy Of Sciences
Institute of Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensing Technology Company Chinese Academy Of Sciences, Institute of Physics of CAS filed Critical Sensing Technology Company Chinese Academy Of Sciences
Priority to CN198686207853U priority Critical patent/CN86207853U/zh
Publication of CN86207853U publication Critical patent/CN86207853U/zh
Priority to US07/086,411 priority patent/US4906849A/en
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

本实用新型是一种使用聚偏氟乙烯薄膜(PVDF)作为敏感材料的热释电型激光辐射探测器。这种探测器灵敏度为5-10V/J，响应时间小于0.5ms。它能直接检测波长范围从0.25μm至25μm，功率密度高达100MW/cm2的脉冲激光辐射。

Description

本实用新型涉及一种热释电型激光辐射探测器，特别是一种既具有宽的光谱响应，又能直接承受高功率密度脉冲激光辐射的热释电型探测器。
已知的激光辐射探测器要求采用近于黑体又能承受高功率密度辐射的材料做成，如中国专利申请85100696所提供的激光辐射探测器采用定向沉积石墨作吸收材料，然而由于微型金属热电偶作传感元件，其响应速度有待于提高。另一方面，聚偏氟乙烯薄膜（以下简称PVDF薄膜）被极化后能产生热释电效应，其热释电系数相当于铌酸锂单晶，因此可以用它作光辐射的热敏传感材料。
本实用新型的目的在于：提供一种用于高功率密度的激光辐射探测器，在这种探测器中用作辐射吸收层的不是涂复或蒸镀的黑色薄膜层，而是将一个制备好的特制吸收体部件与聚偏氟乙烯薄膜（以下简称PVDF薄膜）结合在一起。这种特制的吸收材料应具有宽的光谱吸收响应范围，在常用的0.25μm至2.5μm范围内响应平坦。与此同时，它能承受激光辐射的高功率密度。本实用新型的特制的吸收体的制备方法是申请人所提供的方法，即采用定向沉积石墨作吸收体，而PVDF薄膜需经过极化处理，其处理工艺条件为：在温度100～150℃下拉伸，并在300KV－1MV／Cm的强电场下冷却。
本实用新型包括平板形和锥腔型两种结构形式。平板形结构形式的吸收体可以是园形、方形或其它任何形状，面积为2mm2～36cm2，厚度为50～200μm的平板。先将经过极化处理的PVDF薄膜，按比吸收体边沿宽出4－10mm的尺寸剪切下来，用导电银浆均匀平展地粘贴在镀金（或银）的敷铜板上，再将吸收体平板粘牢在经过极化处理的聚偏氟乙烯薄膜上面，周围是宽度2－5mm的导电金属框带。金属框带与吸收体紧密接触形成接地电极；镀金敷铜板为另一电极，聚偏氟乙烯薄膜在这两电极之间。对于锥腔型结构，吸收体的口径从5mm到60mm范围；顶角从22.5°－60°，壁厚从150μm－300μm先将经过极化处理的PVDF薄膜，按照锥型的尺寸剪切成能将锥腔包裹起来的扇形，然后紧密地粘贴在锥腔的外壁上，这里使用的PVDE薄膜应该是外面镀有银膜的、锥腔本身成为接地电极，而PVDF薄膜的外表面银膜形成另一个电极。
本实用新型所提供的两种结构热释电型辐射探测器，制作时都应确保不使PVDF薄膜的两面发生任何短路。
这两种结构的热释电型探测器性能优越，它使热释电材料的快响应速度与吸收体的宽光谱吸收和能承受高功率密度辐射能力的优点得到了统一。利用本实用新型制作的探测器可用于YAG激光及其二、三次倍频激光输出光脉冲的检测，CO2激光器脉冲激光输出的检测和红宝石脉冲激光输出的检测。也可用于钨带灯、He－Ne激光及CO2等连续激光经斩波后输出的检测等等。
本实用新型所提供的热释电型辐射探测器其典型的结构数据如下：
有效受光面积：3.14cm2
吸收体厚度：100μm
聚偏氟乙烯薄膜厚度：30μm
光谱响应范围：0.25－25μm（0.25－2.5μm平坦）
灵敏度：10mv／mJ
响应时间：0.5ms
最大可承受功率密度：100MW／cm2
本实用新型的实施例如图1、2所示，现在参照图1、2说明本实用新型所提供的探测器的两种具体结构。图1中（1）是用于接收辐射的特制的黑体吸收层，直径为20mm，厚度为100μm，它的周围是作为地电极的直径为26mm的铜环（2）；黑体吸收层和铜环均粘接在PVDF薄膜（3）上；薄膜后面是作为另一电极的镀金层（4）；这层导电膜镀在敷铜板制成的基片（5）上；通过金属化孔，输出引线（6）从基片的另一面引出。这样制成的探测器芯片是被接地的金属壳（7）屏蔽起来的。
图2中（1）是锥腔型辐射吸收体，锥腔口径φ20mm，它的前边沿与地电极铜环（2）有良好的电接触；它的背面是PVDF薄膜（3）将锥腔紧密包裹着；PVDF薄膜外面是作为另一电极的镀银层（4）；镀银层（4）与电极基座（5）有良好的电接触；通过同轴插座（6）将信号输出，整个锥腔探测器是被接地的金属壳（7）屏蔽起来的。

Claims (4)

1、一种由热敏传感元件、吸收体组成的热释电型辐射探测器，其特征在于：a、热敏传感元件和吸收体呈可分离式组合结构、b、采用PVDF薄膜热释电材料作热敏传感元件，其一侧电极为镀金(或镀银)的敷铜板，另一侧电极为带金属框带的定向沉积石墨吸收体。
2、一种按权利要求1所述的热释电型辐射探测器，其特征在于：平板形结构的吸收体可以是园形、方形或其它形状，面积为2mm2－36cm2，厚度为50－200μm的定向沉积的石墨平板和按此吸收体边沿宽出4－10mm的尺寸的PVDF薄膜粘结在一起。
3、一种按权利要求1所述的热释电型辐射探测器，其特征在于：锥腔形结构的吸收体可以是锥腔口径从5mm－60mm，顶角从22.5°－60°，壁厚从150μm－300μm和同样尺寸的PVDF薄膜粘结在一起。
4、一种按权利要求1所述的热释电型辐射探测器，其特征在于：PVDF薄膜经极化处理，后附着于吸收体上。
CN198686207853U 1986-10-10 1986-10-10 聚偏氟乙烯薄膜激光辐射探测器 Expired - Lifetime CN86207853U (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN198686207853U CN86207853U (zh) 1986-10-10 1986-10-10 聚偏氟乙烯薄膜激光辐射探测器
US07/086,411 US4906849A (en) 1986-10-10 1987-08-17 Laser radiation detector using polyvinylidene fluoride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN198686207853U CN86207853U (zh) 1986-10-10 1986-10-10 聚偏氟乙烯薄膜激光辐射探测器

Publications (1)

Publication Number Publication Date
CN86207853U true CN86207853U (zh) 1987-07-29

Family

ID=4810191

Family Applications (1)

Application Number Title Priority Date Filing Date
CN198686207853U Expired - Lifetime CN86207853U (zh) 1986-10-10 1986-10-10 聚偏氟乙烯薄膜激光辐射探测器

Country Status (2)

Country Link
US (1) US4906849A (zh)
CN (1) CN86207853U (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106679793A (zh) * 2017-02-22 2017-05-17 中国计量大学 检测声功率的新型热释电传感器
CN112786772A (zh) * 2021-01-08 2021-05-11 有研工程技术研究院有限公司 一种红外增强吸收金属纳米材料及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4105591C1 (en) * 1991-02-22 1992-04-02 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De IR sensor in the form of pyroelectric detector - has silicon@ substrate with pyroelectric sensor film metallise to a pattern
US5620740A (en) * 1994-04-18 1997-04-15 Servo Corporation Of America Spun cast IR detector arrays with integrated readout electronics and method of making the same
US5502307A (en) * 1994-04-18 1996-03-26 Servo Corporation Of America Spun cast IR detector arrays and method of making the same
AU1794295A (en) * 1994-05-13 1995-11-23 Matsushita Electric Industrial Co., Ltd. Radiation detector
US5923029A (en) * 1997-09-22 1999-07-13 The United States Of America As Represented By The Secretary Of The Air Force Narrow band optical radiation sensor using pyroelectric material
US5991319A (en) * 1997-11-21 1999-11-23 Trw Inc. Mirror failure detector for high power lasers
US6539137B1 (en) * 2000-03-08 2003-03-25 Fujitsu Limited Thermo-electric signal coupler
GB0304281D0 (en) * 2003-02-25 2003-03-26 Secretary Trade Ind Brit Ultrasound power sensor
US10548977B1 (en) 2016-05-20 2020-02-04 Emery Korpas Pain relief utilizing a combination of polymer based materials
US10702704B2 (en) 2016-05-20 2020-07-07 E.K. Licensing, Llc Pain relief utilizing polymer based materials or a combination of LED bulbs, polymer based materials and a near field accelerator

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651379B1 (zh) * 1971-04-07 1981-12-04
DE3115860A1 (de) * 1980-04-22 1982-02-04 Konishiroku Photo Industry Co., Ltd., Tokyo "waermeempfindliches aufzeichnungsmaterial und unter seiner verwendung durchgefuehrtes aufzeichnungsverfahren"
US4467202A (en) * 1981-03-04 1984-08-21 Kureha Kagaku Kogyo Kabushiki Kaisha Photoelectric detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106679793A (zh) * 2017-02-22 2017-05-17 中国计量大学 检测声功率的新型热释电传感器
CN112786772A (zh) * 2021-01-08 2021-05-11 有研工程技术研究院有限公司 一种红外增强吸收金属纳米材料及其制备方法
CN112786772B (zh) * 2021-01-08 2023-12-19 有研工程技术研究院有限公司 一种红外增强吸收金属纳米材料及其制备方法

Also Published As

Publication number Publication date
US4906849A (en) 1990-03-06

Similar Documents

Publication Publication Date Title
CN86207853U (zh) 聚偏氟乙烯薄膜激光辐射探测器
CN101285705B (zh) 红外光探测器
US7595543B2 (en) Semiconductor processing method for increasing usable surface area of a semiconductor wafer
WO2004106987A3 (en) Impurity-based waveguide detectors
CN104900670A (zh) 一种基于铋铜硒氧热电薄膜横向热电效应的光探测器
CN110160659B (zh) 一种敏感元刻蚀型的非制冷红外窄带探测器及制备方法
CN108172663A (zh) 一种ZnMgO日盲紫外探测器的封装方法及封装结构
CN212230437U (zh) InSb敏感元、InSb光电红外传感器及探测器
CN100458382C (zh) 用钙钛矿氧化物单晶材料制作的快响应高灵敏度紫外光探测器
CN109473488B (zh) 可见盲紫外光探测器及其制备方法
CN113206184B (zh) 一种基于硒化铅薄膜的自驱动紫外光探测器
CN101261156B (zh) 紫外光探测器
CN101261158B (zh) 一种光探测器
US5168321A (en) Doped-germanium sensor for use in a system to control the alignment of a CO2 laser beam
US4116063A (en) Liquid helium-cooled bolometer wherein the sensitive element and the elements linking the latter to the electrical connections are obtained from the same semiconductor body
JPS56150888A (en) Semiconductor laser device
CN110752267A (zh) 一种基于氧化镓的三维日盲光电探测器
CN212434634U (zh) InSb敏感元、无引线InSb光电红外传感器及探测器
JPS6140929B2 (zh)
EP3811043B1 (en) A high bandwidth thermoelectric thin film uv, visible light and infrared radiation sensor and a method for manufacturing thereof
JPS54101687A (en) Solar battery unit
CN110160658B (zh) 一种刻蚀增强型的非制冷红外薄膜探测器及制备方法
JPS6486567A (en) Manufacture of amorphous silicon solar cell
JPS6482590A (en) Manufacture of semiconductor device
JPS6345869A (ja) 有機光電変換素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
RN01 Renewal of patent term
C17 Cessation of patent right
CX01 Expiry of patent term