CN85100019A - 正温度系数陶瓷热敏电阻的制备工艺 - Google Patents

正温度系数陶瓷热敏电阻的制备工艺 Download PDF

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Publication number
CN85100019A
CN85100019A CN 85100019 CN85100019A CN85100019A CN 85100019 A CN85100019 A CN 85100019A CN 85100019 CN85100019 CN 85100019 CN 85100019 A CN85100019 A CN 85100019A CN 85100019 A CN85100019 A CN 85100019A
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Prior art keywords
temperature coefficient
positive temperature
coefficient thermistor
sio
preparation technology
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CN 85100019
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方春行
刘维跃
沈继耀
谈家琪
徐庭献
曲远方
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Tianjin University
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Tianjin University
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Priority to CN 85100019 priority Critical patent/CN85100019A/zh
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Abstract

一种半导体陶瓷热敏电阻的制备工艺,本发明采用SiO2或SiO2+Al2O3在合成主配方前引入工艺,使得用Fe、Mg等受主杂质含量较高的原料生产正温度系数陶瓷热敏电阻的瓷料易于半导化,提高了原料适用性及产品的成品率,产品的性能得到很大改善。

Description

本发明属于半导体陶瓷热敏电阻的制备工艺。
目前国内生产正温度系数陶瓷热敏电阻是采用搪瓷工业用TiO2和分析纯BaCO3为主要原料以〔(Ba1-xMx)Ti1+δ+0.15-0.3mol%M′〕+SiO2,Al2O3,MnO2,Sb2O3,Li2CO3等掺杂加入物中的一种或多种作配方,(式中M:Pb、Sr等二价元素,M′:Nb、Ta或Y、Ce、La等稀土元素)。国际上,日本特许公报昭53-31554,昭56-6124,美国专利4.096.098,松冈富造等National Tech,Rept.21.329(1975)均报道过采取〔(Ba1-xMx)Ti1+δO3+0.15-0.3mol%M′〕主配方先行合成,而后再引入其它掺杂加入物的常规工艺来制备正温用系数陶瓷热敏电阻。该工艺路线的缺点是:当其原料中受主杂质稍高时,所产生的瓷料难于半导化,有时甚至不能半导化,严重影响产品性能,成品率低,工艺难于掌握。
本发明的目的是克服已有工艺生产的正温度系数陶瓷热敏电阻存在的难于半导化,产品的成品率低,工艺难于掌握的缺点。
本发明采用SiO2或SiO2+Al2O3在合成主配方前引入的工艺,可以实现受主杂质稍高时正温度系数陶瓷热敏电阻瓷料良好半导化,把原料适用性的范围大大拉宽。如下例:
经光谱分析1#和2#TiO2的Fe,Mg等受主杂质的含量不同:
原料    Fe(PPm)    Mg(PPm)
1# TiO237 64
2# TiO253 82
按同一配方:〔(Ba0.75Sr0.25)Ti1.01O3+0.11mol%Nb3O5〕+1.5mol%SiO3+0.5mol%Al2O3+0.05mol%MnO2+0.04mol%Sb2O3+0.1mol%Li2CO3,用已有常规工艺和将SiO2或SiO2+Al2O3在合成主配方前先行引入的本发明工艺,在其他工艺条件相同的情况下制备正温度系数陶瓷热敏电阻资料其性能如下:
已有常规工艺    本发明工艺
ρ(Ω·cm) ρ180/ρ ρ(Ω·cm) ρ180
1# TiO3142 5.1×1052400 2.4×104
2# TiO29700 7.0×103194 3.5×105
其中ρ:室温下的电阻率。ρ180:180℃下的电阻率
往1TiO2中引入0.001wt%Fe3O4和0.002wt%Mg(OH)2·4MgCO3·6H2O,按配方〔(Ba0.75Sr0.25Ti1.01O3+0.11mol%Nb2O3〕+1.5mol%SiO2+0.5mol%Al2O3+0.05mol%MnO2+0.04mol%Sb2O3+0.1mol%Li2CO3,用两种工艺制备正温度系数陶瓷热敏电阻资料其性能如下:
性能指标    已有常规工艺    本发明工艺
ρ(Ω·cm)    5600    978
ρ180/ρ 1.2×1046.9×104
采用工业纯TiO2和含Fe量0.0023wt%-0.0027wt%的工业纯BaCO3为原料,结果如下:
已有常规工艺    本发明工艺
发热体资料编号    R(K·Ω)    表面温度    R(Ω)    表面温度
A    10K    68℃    68Ω    96℃
S870K 106℃ 760Ω 150℃
可见对Fe、Mg杂质含量较高的原料,本发明工艺有利于资料的半导化,其性能有很大改善。
本发明工艺在生产中容易实现,只要将SiO2或SiO3+Al2O3在合成主配方前引入工艺,不需增加设备,流程。

Claims (1)

  1. 一种正温度系数陶瓷热敏电阻的制备工艺,其特征在于采用Sio2或Sio2+Al2O3在合成主配方前引入的工艺。
CN 85100019 1985-04-01 1985-04-01 正温度系数陶瓷热敏电阻的制备工艺 Pending CN85100019A (zh)

Priority Applications (1)

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CN 85100019 CN85100019A (zh) 1985-04-01 1985-04-01 正温度系数陶瓷热敏电阻的制备工艺

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CN 85100019 CN85100019A (zh) 1985-04-01 1985-04-01 正温度系数陶瓷热敏电阻的制备工艺

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CN85100019A true CN85100019A (zh) 1986-02-10

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1052804C (zh) * 1995-06-02 2000-05-24 上海大地通信电子有限公司 正温度系数陶瓷热敏电阻的制造方法
CN1055141C (zh) * 1996-05-08 2000-08-02 张贺林 电解退镀金属表面镍层和铜镍铬层的方法
CN102603291A (zh) * 2012-03-26 2012-07-25 常熟市林芝电子有限责任公司 热敏陶瓷材料和由其制得冰箱启动用热敏电阻及制造方法
CN102617132A (zh) * 2012-03-26 2012-08-01 常熟市林芝电子有限责任公司 热敏陶瓷材料和由其制得纱线加热用热敏电阻及制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1052804C (zh) * 1995-06-02 2000-05-24 上海大地通信电子有限公司 正温度系数陶瓷热敏电阻的制造方法
CN1055141C (zh) * 1996-05-08 2000-08-02 张贺林 电解退镀金属表面镍层和铜镍铬层的方法
CN102603291A (zh) * 2012-03-26 2012-07-25 常熟市林芝电子有限责任公司 热敏陶瓷材料和由其制得冰箱启动用热敏电阻及制造方法
CN102617132A (zh) * 2012-03-26 2012-08-01 常熟市林芝电子有限责任公司 热敏陶瓷材料和由其制得纱线加热用热敏电阻及制造方法

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