CN2901697Y - High voltage broad band pulse amplifier - Google Patents
High voltage broad band pulse amplifier Download PDFInfo
- Publication number
- CN2901697Y CN2901697Y CN 200620034586 CN200620034586U CN2901697Y CN 2901697 Y CN2901697 Y CN 2901697Y CN 200620034586 CN200620034586 CN 200620034586 CN 200620034586 U CN200620034586 U CN 200620034586U CN 2901697 Y CN2901697 Y CN 2901697Y
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- circuit
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- pulse signal
- amplifying circuit
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Abstract
The utility model relates to a high pressure broadband pulse amplifier, which is structured by a pulse signal input terminal, a preceding stage amplifying circuit, an interstate coupled circuit, a post stage amplifying circuit, a pulse signal output terminal connecting orderly. A high voltage power supply is connected respectively with the preceding stage amplifying circuit for pulse signal pre amplifying and the post stage amplifying circuit for high voltage amplifying. A biasing power supply is connected with the preceding stage amplifying circuit and the post stage amplifying circuit. The utility model is capable of amplifying negative-going pulse signal with voltage peak value smaller than 10V to more than 1000V and at the same time, controlling the pulse signal within 70 ns and vibration smaller than 3 ns, and the pulse signal top waveform is amplified linearly and the linearity is better than 10%.
Description
Technical field
The utility model belongs to pulse signal amplifying device field, is specifically related to a kind of high pressure wideband pulse amplifier.
Background technology
At present, pulse signals is amplified common employing field effect transistor circuit or transistor circuit, and two technical indicators of pulse amplitude after the amplification and pulse band exist not enough.Though existing pulse amplifying device can be with more than the pulse amplitude linear amplification 1000V, amplified pulse signal can only reach the microsecond magnitude along (rising edge/trailing edge), can not satisfy the requirement of wideband; Can be with amplified pulse signal along accomplishing 100ns with interior pulse amplifying device, pulse amplitude can not reach more than the 1000V again.Existing pulse amplifying device can not accomplish that " high pressure " (pulse amplitude after the amplification reaches more than the 1000V) and " wideband " (amplified pulse signal is following along reaching 100ns) take into account simultaneously.
Summary of the invention
The purpose of this utility model provides a kind of high pressure wideband pulse amplifier.
The technical scheme that its technical problem that solves the utility model adopts is: the mode that adopts the cascade of field effect transistor amplification circuit and electric metal pottery transmitting tube amplifying circuit.Wait that the signal that amplifies pulse puts in advance through pulse signal input interface to preamplifying circuit, deliver to back level amplifying circuit by the interstage coupling circuit after reaching the required technical indicator of back level work, and from the final result that amplifies of pulse signal output interface output.Preamplifying circuit adopts field effect transistor, and back level amplifying circuit adopts the cermet transmitting tube.High-voltage power module is respectively preamplifying circuit drain voltage is provided, for back level amplifying circuit provides anode high voltage.The level amplifying circuit provided different grid biases before and after the biasing circuit module was respectively.Operating state of the present utility model is: the two-stage amplifying circuit all works in critical cut-off state when static, and fast reaction when the pulse input is arranged economizes the direct current power consumption in the no pulse input time.Pulse edge works in the pulse radiation frequency magnifying state in the time of dynamically, and the pulse top works in the linear amplification state.
High pressure wideband pulse amplifier of the present utility model, the pulse signal input interface, preamplifying circuit, interstage coupling circuit, back level amplifying circuit, the pulse signal output interface that are characterized in amplifier are electrically connected in proper order, high voltage source respectively with carry out preamplifying circuit that pulse puts in advance and carry out the back level amplifying circuit that high pressure amplifies and be connected, bias supply is connected with a preamplifying circuit and a back grade amplifying circuit respectively.
The preamplifying circuit that pulse puts in advance that carries out of high pressure wideband pulse amplifier of the present utility model adopts field effect transistor amplification circuit, carry out the back level amplifying circuit employing cermet transmitting tube amplifying circuit that high pressure amplifies, the interstage coupling circuit of amplifier adopts resaistance-capacity coupling circuit.
The pulse signal input interface links to each other with the grid of field effect transistor through coupling capacitance; Prime biasing resistor one end links to each other with the grid of field effect transistor, and the other end links to each other with the prime output of bias supply; Prime storage capacitor one end ground connection, the other end links to each other with the prime output of high voltage source; Drain resistance links to each other the drain electrode of another termination field effect transistor with the prime output of high voltage source; Source resistance is in parallel with the source electrode shunt capacitance, the source electrode of the termination field effect transistor after the parallel connection, other end ground connection.Prime coupling capacitance and inter-stage capacitances in series, the drain electrode of the termination field effect transistor after the series connection, the grid of another termination cermet transmitting tube; Inter-stage resistance one end ground connection, the other end are connected in the middle of prime coupling capacitance and the inter-stage electric capacity; Back level biasing resistor one end links to each other with the grid of cermet transmitting tube, and the other end links to each other with the back level output of bias supply.Back level storage capacitor one end ground connection, the other end links to each other with the back level output of high voltage source; Anode resistance one end links to each other the anode of another termination cermet transmitting tube with the back level output of high voltage source; Cathode resistor is in parallel with cathode bypass capacitor, the negative electrode of the termination cermet transmitting tube after the parallel connection, other end ground connection; Output coupling capacitor is connected with load resistance, the anode of the termination cermet transmitting tube after the series connection, and other end ground connection, intermediate ends is connected to the pulse signal output interface.
High pressure wideband pulse amplifier of the present utility model, the negative-going pulse signal of voltage peak absolute value less than 10V can be amplified to more than the 1000V, can make simultaneously pulse signal along reaching in the 70ns again, rock less than 3ns, and the pulse signal top wave form can linear amplification, and the linearity is better than 10%.
Description of drawings
Fig. 1 is the structural principle block diagram of high pressure wideband pulse amplifier embodiment of the present utility model.
Fig. 2 is the circuit theory diagrams of high pressure wideband pulse amplifier embodiment of the present utility model.
Fig. 3 is the input pulse waveform figure of high pressure wideband pulse amplifier embodiment circuit of the present utility model.
Fig. 4 is the output pulse waveform figure of high pressure wideband pulse amplifier embodiment circuit of the present utility model.
Among the figure, 1. pulse signal input interface 2. preamplifying circuits 3. interstage coupling circuit 4. back grade amplifying circuit 5. pulse signal output interfaces 6. high voltage sourcies 7. bias supplies;
Embodiment
Below in conjunction with drawings and Examples the utility model is further specified
In Fig. 1, high pressure wideband pulse amplifier of the present utility model comprises pulse signal input interface 1, preamplifying circuit 2, interstage coupling circuit 3, back level amplifying circuit 4, pulse signal output interface 5, high voltage source 6, bias supply 7, annexation is a pulse signal input interface 1, preamplifying circuit 2, interstage coupling circuit 3, back level amplifying circuit 4, pulse signal output interface 5 orders are electrically connected, high voltage source 6 is connected with back level amplifying circuit 4 with preamplifying circuit 2 respectively, and bias supply 7 is connected with back level amplifying circuit 4 with preamplifying circuit 2 respectively.
Pulse signal is delivered to preamplifying circuit 2 through pulse signal input interface 1 and is put in advance, delivers to back level amplifying circuit 4 by interstage coupling circuit 3 after reaching the required index of back level work, and from the final result that amplifies of pulse signal output interface 5 outputs.Arbitrarily the negative sense of top wave form dashes along the pulse soon and enters preamplifying circuit 2 through pulse signal input interface 1, and pulse signal is along less than 5ns, voltage peak absolute value 5V.In the utility model, adopt the LECROY-LW120 arbitrarily signal generating device to produce standard input signal.The signal of pulse signal output interface 5 adopts the TEK-TDS3032 oscilloscope to carry out detection as a result.Carry out the preamplifying circuit 2 employing field effect transistor amplification circuits that pulse is put in advance, carry out the back level amplifying circuit 4 employing cermet transmitting tube amplifying circuits that high pressure amplifies, the interstage coupling circuit 3 of amplifier adopts resaistance-capacity coupling circuits.The level amplifying circuit provided different direct voltages before and after high voltage source 6 was respectively, and the level amplifying circuit provided different grid biases before and after bias supply 7 was respectively.
In Fig. 2 as can be seen, preamplifying circuit 2 comprises input coupling capacitance C1, prime storage capacitor C2, source electrode shunt capacitance C3, prime biasing resistor R1, drain resistance R2, source resistance R3, field effect transistor M1, wherein, field effect transistor M1 adopts the P-channel enhancement type field effect transistor, selects that device parameters can satisfy in the IRF9 series for use: leakages-source electrode limiting voltage absolute value＞200V, ON time and turn-off time be equal≤and a kind of in the field effect transistor of 15ns.Field effect transistor also can select for use performance parameter similarly to replace device.Interstage coupling circuit 3 comprises prime coupling capacitance C4, inter-stage capacitor C 5, inter-stage resistance R 4, back level biasing resistor R5.Back level amplifying circuit 4 comprises back level storage capacitor C6, cathode bypass capacitor C7, output coupling capacitor C8, anode resistance R6, cathode resistor R7, load resistance R8, cermet transmitting tube M2, filament supply B1, wherein, cermet transmitting tube M2 can select FC311, FC312F, a kind of in the microwave triode of FC313F series.Microwave triode also can adopt or the exemplary operation state is that the performance parameter of grid impulse radio frequency magnifying state is similarly replaced device.
The pulse signal input interface 1 of high pressure wideband pulse amplifier of the present utility model links to each other with the grid of field effect transistor M1 through coupling capacitance C1; Prime biasing resistor R1 one end links to each other with the grid of field effect transistor M1, and the other end links to each other with the prime output of bias supply 7; Prime storage capacitor C2 one end ground connection, the other end links to each other with the prime output of high voltage source 6, and when high voltage source 6 fan-out capabilities were enough, storage capacitor C2 can omit; Drain resistance R2 one end links to each other the drain electrode of another termination field effect transistor M1 with the prime output of high voltage source 6; Source resistance R3 is in parallel with source electrode shunt capacitance C3, the source electrode of the termination field effect transistor M1 after the parallel connection, other end ground connection.
Prime coupling capacitance C4 connects with inter-stage capacitor C 5, the drain electrode of the termination field effect transistor M1 after the series connection, the grid of another termination cermet transmitting tube M2; Inter-stage resistance R 4 one end ground connection, the other end are connected in the middle of prime coupling capacitance C4 and the inter-stage capacitor C 5; Back level biasing resistor R5 one end links to each other with the grid of cermet transmitting tube M2, and the other end links to each other with the back level output of bias supply 7.
Back level storage capacitor C6 one end ground connection, the other end links to each other with the back level output of high voltage source 6, and when high voltage source 6 fan-out capabilities were enough, storage capacitor C6 also can omit; Anode resistance R6 one end links to each other the anode of another termination cermet transmitting tube M2 with the back level output of high voltage source 6; Cathode resistor R7 is in parallel with cathode bypass capacitor C7, the negative electrode of the termination cermet transmitting tube M2 after the parallel connection, other end ground connection; Output coupling capacitor C8 connects with load resistance R8, the anode of the termination cermet transmitting tube M2 after the series connection, and other end ground connection, intermediate ends is connected to pulse signal output interface 5; Filament supply B1 provides the standard lamp filament voltage for cermet transmitting tube M2.
The front and back stages static work point of enlarged circuits all is in critical cut-off state, fast reaction when the pulse input is arranged, and the no pulse input time is economized the direct current power consumption.The pulse top works in the linear amplification state.The prime pulse is enlarged into 50V～60V direct impulse, and the signal edge is less than 15ns, and a back level pulse is enlarged into more than the 1000V, and signal is along the negative-going pulse less than 70ns.Amplitude and signal edge that the distributed constant decision signal of two-stage circuit and interstage coupling circuit amplifies.
Field effect transistor M1 selects P-channel enhancement type field effect transistor IRF9610 for use, prime biasing resistor R1=300 Ω, drain resistance R2=100 Ω, source resistance R3=5.1 Ω, inter-stage resistance R 4=10k Ω, input coupling capacitance C1, prime storage capacitor C2, back level storage capacitor C6, inter-stage capacitor C 5 are equal to 100 μ f, source electrode shunt capacitance C3=1000pf, prime coupling capacitance C4=0.1 μ f.For guaranteeing the electric capacity operate as normal, the withstand voltage of electric capacity is more than the twice of operating voltage usually.Cermet transmitting tube M2 adopts cermet transmitting tube FC311, and anode resistance R6 is a 1.5k Ω high-power resistance, back level biasing resistor R5=100 Ω, cathode bypass capacitor C7=100pf, cathode resistor R7=33 Ω, output coupling capacitor C8=0.1 μ f, load resistance R8=9k Ω.
High-voltage DC power supply 6 is that 1.2KV～1.5KV is adjustable for prime provides voltage-180V for the back level provides high pressure.Bias supply 7 provides bias direct current voltage-4.3V for prime, for the back level provides bias direct current voltage-9.7V.When field effect pipe M1 and cermet transmitting tube M2 adopt parameter similarly to replace device, prime bias voltage value that bias supply 7 provides and back level bias voltage value should adjust accordingly according to device parameters, make preamplifying circuit 2 and back level amplifying circuit 4 all work in critical cut-off state.Filament supply B1 provides filament voltage 6.0V for cermet transmitting tube M2.When cermet transmitting tube M2 adopted parameter similarly to replace device, the filament voltage value that filament supply B1 provides should equal to replace the standard lamp filament voltage value of device.
Fig. 3 is the input pulse waveform figure of embodiment of the present utility model.Crest value of impulse voltage absolute value 5V, pulsewidth 6 μ s, the signal edge is less than 5ns.The pulse top index variation.
Fig. 4 is the output pulse waveform figure of embodiment of the present utility model, and the crest value of impulse voltage absolute value is greater than 1000V, pulsewidth 6 μ s, and signal is along less than 70ns.Pulse top index variation, pulse top are amplified the linearity and are better than 10%.
For guaranteeing the abundant preheating of cermet transmitting tube, operate as normal, device must add five minutes at filament voltage just can add front and back level high pressure later on, could begin to import pulse signal to be amplified after high pressure adds.
The magnitude of voltage of device output pulse can be regulated by the magnitude of voltage that changes high-voltage DC power supply 6 supply back level amplifying circuits 4.Back level high pressure can be under the device non operating state, regulated in advance, also back level high pressure can be regulated in working order down at a slow speed by a small margin.
Field effect transistor M1 of the present utility model and cermet transmitting tube M2 adopt the large tracts of land fin, and it is cold that whole device adopts fan high wind to compel.
Claims (5)
1. high pressure wideband pulse amplifier, it is characterized in that: the pulse signal input interface (1) of described amplifier, preamplifying circuit (2), interstage coupling circuit (3), back level amplifying circuit (4), pulse signal output interface (5) order are electrically connected, high voltage source (6) respectively with carry out preamplifying circuit (2) that pulse puts in advance and carry out the back level amplifying circuit (4) that high pressure amplifies and be connected, bias supply (7) is connected with a preamplifying circuit (2) and a back grade amplifying circuit (4) respectively.
2. high pressure wideband pulse amplifier according to claim 1, it is characterized in that: describedly carry out the preamplifying circuit (2) that pulse puts in advance and adopt field effect transistor amplification circuit, carry out back level amplifying circuit (4) the employing cermet transmitting tube amplifying circuit that high pressure amplifies, interstage coupling circuit (3) adopts resaistance-capacity coupling circuit.
3. high pressure wideband pulse amplifier according to claim 1 and 2, it is characterized in that the annexation of the preamplifying circuit (2) in the described amplifier is: pulse signal input interface (1) links to each other with the grid of field effect transistor M1 through coupling capacitance C1; Prime biasing resistor R1 one end links to each other with the grid of field effect transistor M1, and the other end links to each other with the prime output of bias supply (7); Prime storage capacitor C2 one end ground connection, the other end links to each other with the prime output of high voltage source (6); Drain resistance R2 one end links to each other the drain electrode of another termination field effect transistor M1 with the prime output of high voltage source (6); Source resistance R3 is in parallel with source electrode shunt capacitance C3, the source electrode of the termination field effect transistor M1 after the parallel connection, other end ground connection.
4. high pressure wideband pulse amplifier according to claim 1 and 2, the annexation that it is characterized in that the interstage coupling circuit (3) in the described amplifier is: prime coupling capacitance C4 connects with inter-stage capacitor C 5, the drain electrode of a termination field effect transistor M1 after the series connection, the grid of another termination cermet transmitting tube M2; Inter-stage resistance R 4 one end ground connection, the other end are connected in the middle of prime coupling capacitance C4 and the inter-stage capacitor C 5; Back level biasing resistor R5 one end links to each other with the grid of cermet transmitting tube M2, and the other end links to each other with the back level output of bias supply (7).
5. high pressure wideband pulse amplifier according to claim 1 and 2 is characterized in that the annexation of the back level amplifying circuit (4) in the described amplifier is: back level storage capacitor C6 one end ground connection, and the other end links to each other with the back level output of high voltage source (6); Anode resistance R6 one end links to each other the anode of another termination cermet transmitting tube M2 with the back level output of high voltage source (6); Cathode resistor R7 is in parallel with cathode bypass capacitor C7, the negative electrode of the termination cermet transmitting tube M2 after the parallel connection, other end ground connection; Output coupling capacitor C8 connects with load resistance R8, the anode of the termination cermet transmitting tube M2 after the series connection, and other end ground connection, intermediate ends is connected to pulse signal output interface (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620034586 CN2901697Y (en) | 2006-06-13 | 2006-06-13 | High voltage broad band pulse amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620034586 CN2901697Y (en) | 2006-06-13 | 2006-06-13 | High voltage broad band pulse amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN2901697Y true CN2901697Y (en) | 2007-05-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620034586 Expired - Fee Related CN2901697Y (en) | 2006-06-13 | 2006-06-13 | High voltage broad band pulse amplifier |
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| CN (1) | CN2901697Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103888084A (en) * | 2014-03-25 | 2014-06-25 | 中国科学院空间科学与应用研究中心 | Integrated pre-amplifier used for charged particle detector |
| CN109212509A (en) * | 2018-09-21 | 2019-01-15 | 西安电子科技大学 | A kind of high-pass filter for Laser radar receiver |
-
2006
- 2006-06-13 CN CN 200620034586 patent/CN2901697Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103888084A (en) * | 2014-03-25 | 2014-06-25 | 中国科学院空间科学与应用研究中心 | Integrated pre-amplifier used for charged particle detector |
| CN103888084B (en) * | 2014-03-25 | 2016-08-24 | 中国科学院空间科学与应用研究中心 | A kind of integrated preamplifier for charged particle detector |
| CN109212509A (en) * | 2018-09-21 | 2019-01-15 | 西安电子科技大学 | A kind of high-pass filter for Laser radar receiver |
| CN109212509B (en) * | 2018-09-21 | 2021-07-16 | 西安电子科技大学 | High-pass filter for laser radar receiver |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070516 Termination date: 20120613 |