CN103888084B - A kind of integrated preamplifier for charged particle detector - Google Patents
A kind of integrated preamplifier for charged particle detector Download PDFInfo
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Abstract
The invention provides a kind of integrated preamplifier for charged particle detector, including signal pre-processing circuit, charge sensitive amplifier, pulse former and direct-flow biasing circuit；Described signal pre-processing circuit carries out pretreatment output pulse signal for the charge signal producing detector；Described charge sensitive amplifier is for being converted into voltage signal by the pulse signal that signal pre-processing circuit exports；Described pulse former is for carrying out pulse shaping output by the voltage signal that charge sensitive amplifier exports；Described direct-flow biasing circuit utilizes electric resistance partial pressure to be biased the amplifier quiescent operating point in charge sensitive amplifier and pulse former respectively；Described signal pre-processing circuit, charge sensitive amplifier, pulse former and direct-flow biasing circuit use integration mode to connect；This integrated preamplifier is capable of being more than sedimentary energy the charged particle of 57keV and measures.
Description
Technical field
The present invention relates to amplifier technique field, particularly relate to a kind of integrated preposition amplification for charged particle detector
Device.
Background technology
At present in charged particle is measured, great majority employ semiconductor detector, and the charged particle of certain energy enters
During detector, its energetic portions or total loss, in detector, are absorbed by detector.Now, output pulse amplitude depends on
Size in projectile energy.In general, the magnitude of output pulse amplitude be millivolt/million electro-volt, instrument is directly difficult to
Measuring, the weak pulse therefore exported semiconductor detector carries out the demand of preposition amplification and is proposed, and preamplifier is
One important component part of charged particle detector.
In conventional particle detector, preamplifier many employings discrete component or operational amplifier add peripheral Resistor-Capacitor Unit
Mode, eventually through change external charge-sensitive feedback capacity capacitance size obtain corresponding pulse voltage signal.Should
Mode external interference resistance is poor, generally require take extra filtering measures or shielding construction to preamplifier at
Reason, to obtain preferable signal to noise ratio.Additionally, due to peripheral component quantity is many so that the volume of pre-amplification circuit is big, weight
Weight, power consumption are big and circuit reliability is low.
Summary of the invention
It is an object of the invention to, cause its structure for the existing preamplifier of solution due to peripheral component quantity more
Complexity, volume are big, Heavy Weight, power consumption are big, and the technical problem that circuit reliability is low, and the present invention proposes a kind of for charged particle
The integrated preamplifier of detector, this integrated preamplifier is capable of being more than sedimentary energy the charged particle of 57keV
Measure；Can be used for beyond high energy electron, proton detection device and heavy ion detector, it may also be used for other charged particle measures neck
Territory.
For reaching above-mentioned purpose, the present invention proposes a kind of integrated preamplifier for charged particle detector, should
Integrated preamplifier comprises: signal pre-processing circuit, charge sensitive amplifier, pulse former and Dc bias
Circuit, wherein, signal pre-processing circuit is connected with charge sensitive amplifier, charge sensitive amplifier and pulse
Wave-shaping circuit is connected, and bias circuit is connected with charge sensitive amplifier, pulse former.This special integrated front storing
Big device conjunction with semiconductors detector uses, and can measure the sedimentary energy charged particle more than 57keV, can be according to external different capacitances
Charge-sensitive feedback capacity adjust amplifier Charge sensitive amplifier multiple, and be converted into relevant voltage signal output.
Described signal pre-processing circuit carries out pretreatment for the charge signal producing detector and exports pulse letter
Number；Described charge sensitive amplifier for being converted into voltage letter by the pulse signal that signal pre-processing circuit exports
Number；Described pulse former is defeated for the voltage signal that charge sensitive amplifier exports is carried out pulse shaping
Go out；Described direct-flow biasing circuit utilizes electric resistance partial pressure respectively in charge sensitive amplifier and pulse former
Amplifier quiescent operating point is biased；Described signal pre-processing circuit, charge sensitive amplifier, pulse former
Integration mode is used to connect with direct-flow biasing circuit.
As the further improvement of technique scheme, described signal pre-processing circuit uses resistance-capacitance coupling mode, its
Including capacitance and the first resistance；Described one end of first resistance is connected with the input of capacitance, its other end ground connection,
The outfan of described capacitance is connected with the input of charge sensitive amplifier.
As the further improvement of technique scheme, described charge sensitive amplifier uses capacitive feedback side
Formula, it includes charge-sensitive feedback capacity, feedback resistance, the first amplifier and the first filter capacitor；Described charge-sensitive is anti-
Feed holds and is connected with inverting input, the outfan of the first amplifier respectively after feedback resistance parallel connection；Described first amplifier
Inverting input be also connected with the outfan of capacitance, the input of described first filter capacitor and APS amplifier power supply are even
Connect, its output head grounding.
As the further improvement of technique scheme, described charge sensitive amplifier uses capacitor filtering side
Formula, with the noise of step-down amplifier power input.
As the further improvement of technique scheme, described pulse former uses anti-phase input mode, and it includes
First calculus resistance, the second calculus resistance, the first calculus electric capacity, the second calculus electric capacity and the second amplifier；Described
First calculus electric capacity, the first calculus resistance and the first amplifier are sequentially connected in series, the outfan of described first calculus resistance
It is connected with the inverting input of the second amplifier, respectively with after described second calculus resistance and the second calculus electric capacity parallel connection
The inverting input of two amplifiers, outfan connect.
As the further improvement of technique scheme, described direct-flow biasing circuit uses electric resistance partial pressure mode, and it includes
First divider resistance, the second divider resistance and the second filter capacitor；One end of described first divider resistance respectively with the second dividing potential drop
The in-phase input end of one end of resistance, the first amplifier and the second amplifier be connected, the other end of described first divider resistance with
APS amplifier power supply input is connected, the other end ground connection of described second divider resistance, described second filter capacitor and the second dividing potential drop
Resistor coupled in parallel.
As the further improvement of technique scheme, described direct-flow biasing circuit uses capacitor filtering mode, in case
Only outside noise produces interference to amplifier in.
In general, noise is mainly derived from extraneous factor or electronic device itself.For outside noise, can be by increasing
The modes such as shielding construction are reduced.And the noise that internal electronic device is produced, such as resistance, the electricity of preamplifier periphery
The thermal noise of element generation, the parasitic capacitances etc. such as appearance, then cannot be eliminated by the method.Therefore, after using Integrated design mode,
Owing to the encapsulation of this integrated device itself is provided that good shielding action, additionally, Resistor-Capacitor Unit uses after being internally integrated, various
Ghost effect also can be greatly reduced therewith, thus improves the signal to noise ratio of the integrated preamplifier of the present invention.
Compared with prior art, a kind of advantage for the integrated preamplifier of charged particle detector of the present invention exists
In:
Integrated preamplifier of the present invention has important practical significance to charged particle measurement, uses integrated work
Skill realizes the integrated of signal pre-processing circuit, charge sensitive amplifier, pulse former and DC bias circuit, from
And simplify the structure of preamplifier, reduce volume and weight, decrease the consumption of power；This integrated preamplifier without
Needing external resistor and capacitor component, Resistor-Capacitor Unit uses after being internally integrated, and various ghost effects also can be greatly reduced therewith, thus improves
The signal to noise ratio of the integrated preamplifier of the present invention, and the most external different charge-sensitive feedback capacities can adjust phase
Answer Charge sensitive amplifier multiple, the sedimentary energy charged particle more than 57keV can be realized and measure；This integrated preamplifier is adopted
Realize by integrated circuit technology, can reduce the effect of parasitic capacitance that non-integration design needs line to cause, thus effectively
The background noise of step-down amplifier.
Accompanying drawing explanation
Fig. 1 is the integrated preamplifier operation principle block diagram of the present invention；
Fig. 2 is the schematic diagram of the signal pre-processing circuit embodiment of the present invention；
Fig. 3 is the schematic diagram of the charge sensitive amplifier embodiment of the present invention；
Fig. 4 is the schematic diagram of the pulse former embodiment of the present invention；
Fig. 5 is the schematic diagram of the bias circuit embodiment of the present invention.
Fig. 6 is the circuit diagram of a kind of integrated preamplifier for charged particle detector of the present invention.
Fig. 7 is the measured result figure utilizing the integrated preamplifier measurement of the present invention to obtain.
Reference
C1, capacitance R1, the first resistance
C2, charge-sensitive feedback capacity R2, feedback resistance
C3, the first calculus electric capacity R3, the first calculus resistance
C4, the second calculus electric capacity R4, the second calculus resistance
C5, the first filter capacitor R5, the first divider resistance
C6, the second filter capacitor R6, the second divider resistance
U1A, the first amplifier U1B, the second amplifier
Vdd, APS amplifier power supply
Detailed description of the invention
With embodiment, the method for the invention is described in detail below in conjunction with the accompanying drawings.
A kind of integrated preamplifier for charged particle detector of the present invention, this integrated preamplifier coordinates half
Conductor detector, for measuring the sedimentary energy charged particle more than 57keV, can be anti-according to the charge-sensitive of external different capacitances
Feed holds adjustment amplifier Charge sensitive amplifier multiple, and is converted into the output of relevant voltage signal, realizes by integrated circuit technology,
Active will be produced on, with passive device, the design realizing integrated preamplifier on same semiconductor chip, as it is shown in figure 1,
Described integrated preamplifier comprises: signal pre-processing circuit, charge sensitive amplifier, pulse former and straight
Stream bias circuit.Described signal pre-processing circuit carries out pretreatment for the charge signal producing detector and exports pulse
Signal；Described charge sensitive amplifier for being converted into voltage letter by the pulse signal that signal pre-processing circuit exports
Number；Described pulse former is defeated for the voltage signal that charge sensitive amplifier exports is carried out pulse shaping
Go out；Described direct-flow biasing circuit utilizes electric resistance partial pressure respectively in charge sensitive amplifier and pulse former
Amplifier quiescent operating point is biased；Described signal pre-processing circuit, charge sensitive amplifier, pulse former
Integration mode is used to connect with direct-flow biasing circuit.
Charge sensitive amplifier, this circuit comprises low noise CMOS technology operational amplifier U1A, utilizes computing to put
The pulse signal that signal pre-processing circuit exports is converted into voltage signal by big device；
Pulse former, this circuit comprises CMOS technology operational amplifier U1B, utilizes operational amplifier will front to put U1A
Output signal carry out pulse shaping output；
Based on the above-mentioned integrated preamplifier for charged particle detector, as in figure 2 it is shown, described signal is located in advance
Reason circuit uses resistance-capacitance coupling mode, and it includes capacitance C1 and the first resistance R1；One end of described first resistance R1 with every
The input of straight electric capacity C1 connects, its other end ground connection, and the outfan of described capacitance C1 is preposition with charge-sensitive amplifies electricity
The input on road connects.
As it is shown on figure 3, described charge sensitive amplifier uses capacitive feedback mode, it includes that charge-sensitive feeds back
Electric capacity C2, feedback resistance R2, the first amplifier U1A and the first filter capacitor C5；Described charge-sensitive feedback capacity C2 is with anti-
It is connected with inverting input, the outfan of the first amplifier U1A respectively after feed resistance R2 parallel connection；Described first amplifier U1A's
Inverting input also outfan with capacitance C1 is connected, the input of described first filter capacitor C5 and APS amplifier power supply
Vdd connects, its output head grounding.Described charge sensitive amplifier can use capacitor filtering mode, with step-down amplifier
The noise of power input.
The capacitor filtering of charge sensitive amplifier, mainly by the energy storage characteristic of the first filter capacitor C5, is connected on
The first filter capacitor C5 at DC voltage two ends, when voltage is undergone mutation, the voltage on the first filter capacitor C5 will not occur
Sudden change, but present a process risen or fallen slowly, advantageously reduce the fluctuation of DC voltage, it is to avoid components and parts two
There is violent change in voltage in end.
As shown in Figure 4, described pulse former uses anti-phase input mode, it include the first calculus resistance R3, the
Two calculus resistance R4, the first calculus electric capacity C3, the second calculus electric capacity C4 and the second amplifier U1B；Described first micro-long-pending
Electric capacity C3, the first calculus resistance R3 and the first amplifier U1B is divided to be sequentially connected in series, the outfan of described first calculus resistance R3
It is connected with the inverting input of the second amplifier U1B, after described second calculus resistance R4 and the second calculus electric capacity C4 parallel connection
It is connected with inverting input, the outfan of the second amplifier U1B respectively.
As it is shown in figure 5, described direct-flow biasing circuit use electric resistance partial pressure mode, it include the first divider resistance R5, second
Divider resistance R6 and the second filter capacitor C6；One end of described first divider resistance R5 respectively with the one of the second divider resistance R6
End, the first amplifier U1A and the second amplifier U1B in-phase input end be connected, the other end of described first divider resistance R5 with
APS amplifier power supply Vdd input is connected, the other end ground connection of described second divider resistance R6, described second filter capacitor C6 and the
Two divider resistance R6 are in parallel.Described direct-flow biasing circuit uses capacitor filtering mode, to prevent outside noise defeated to amplifier
Enter end and produce interference.
The capacitor filtering of direct-flow biasing circuit, mainly by the energy storage characteristic of the second filter capacitor C6, is connected on DC voltage
The second filter capacitor C6 at two ends, when voltage is undergone mutation, the voltage on the second filter capacitor C6 will not be undergone mutation, but
Present a process risen or fallen slowly, advantageously reduce the fluctuation of DC voltage, it is to avoid play occur in components and parts two ends
Strong change in voltage.
The charge signal that charged particle detector produces signal pre-processing circuit Q end input from Fig. 2, after capacitance
The pulse signal V1 produced, through charge sensitive amplifier, utilizes the operating characteristic of amplifier, draws and change public affairs as follows
Formula:
Wherein, V2 is voltage signal, and C2 is charge-sensitive feedback capacity amount, and unit is pF.Charge Q is from charged particle
The electron hole pair caused, for silicon semiconductor detector, the average ionization merit of silicon is ε 0=3.62eV.Thus can turn
Change formula as follows:
Wherein Δ E is the sedimentary energy of charged particle, and unit is MeV.If the electric charge spirit that A is charge sensitive amplifier circuit
Sensitivity, conventional unit is mV/MeV, thus can obtain:
Thus, by the computing of described charge sensitive amplifier, i.e. can get the sedimentary energy of charged particle with
Corresponding voltage signal.
The described voltage signal V2 the first calculus electric capacity C3 input from Fig. 4, micro-through pulse former amasss
Partite transport is calculated, and forms the burst pulse that can carry out height analysis.In the present embodiment, the voltage gain of described pulse former
For-R4/R3E, wherein constant e ≈ 2.71828.Each calculus resistance of described pulse former, calculus capacitance size should
Meet following condition:
R3C3=R4C4=τ
In formula, τ is the time constant of pulse former, and the most described pulse former has optimum signal-noise ratio and divides
Resolution.
As it is shown in fig. 7, be the measured result utilizing above-mentioned integrated preamplifier measurement to obtain in the present embodiment.Actual measurement knot
Fruit display, the capacitance of charge-sensitive feedback capacity C2 that the integrated preamplifier of the present invention is internally integrated is about 2.2pF, with
Time, the voltage gain of pulse former about 3 times, amplitude output signal about 6.8mV, according to above-mentioned computing formulaEquivalent inpnt sedimentary energy △ E can be obtained and approximate 113keV, it can be seen that the present invention's is integrated
The signal to noise ratio of preamplifier is better than 2:1, i.e. equivalent noise level about 57keV.Therefore, the integrated preamplifier tool of the present invention
Having the preposition amplifying power of good charge-sensitive and pulse shaping ability, actual tests result also demonstrates this circuit to be had well
Low noise, low-power consumption, reliability and fast-response.
It should be noted last that, above example is only in order to illustrate technical scheme and unrestricted.Although ginseng
According to embodiment, the present invention is described in detail, it will be understood by those within the art that, the technical side to the present invention
Case is modified or equivalent, and without departure from the spirit and scope of technical solution of the present invention, it all should be contained in the present invention
Right in the middle of.
Claims (5)
1. the integrated preamplifier for charged particle detector, it is characterised in that described integrated preamplifier
Including signal pre-processing circuit, charge sensitive amplifier, pulse former and direct-flow biasing circuit；Described signal
Pretreatment circuit carries out pretreatment output pulse signal for the charge signal producing detector；Before described charge-sensitive
Put amplifying circuit for the pulse signal that signal pre-processing circuit exports is converted into voltage signal；Described pulse former
Voltage signal for being exported by charge sensitive amplifier carries out pulse shaping output；Described direct-flow biasing circuit profit
With resistance dividing is other, amplifier quiescent operating point in charge sensitive amplifier and pulse former is carried out partially
Put；Described signal pre-processing circuit, charge sensitive amplifier, pulse former and direct-flow biasing circuit use integrated
Mode connects.
Integrated preamplifier for charged particle detector the most according to claim 1, it is characterised in that described
Signal pre-processing circuit uses resistance-capacitance coupling mode, and it includes capacitance (C1) and the first resistance (R1)；Described first resistance
(R1) one end is connected with the input of capacitance (C1), its other end ground connection, the outfan of described capacitance (C1) with
The input of charge sensitive amplifier connects.
Integrated preamplifier for charged particle detector the most according to claim 2, it is characterised in that described electricity
The sensitive pre-amplification circuit of lotus uses capacitive feedback mode, it include charge-sensitive feedback capacity (C2), feedback resistance (R2), the
One amplifier (U1A) and the first filter capacitor (C5)；Described charge-sensitive feedback capacity (C2) and feedback resistance (R2) are in parallel
Rear it is connected with inverting input, the outfan of the first amplifier (U1A) respectively；The anti-phase input of described first amplifier (U1A)
End also outfan with capacitance (C1) is connected, the input of described first filter capacitor (C5) and APS amplifier power supply (Vdd)
Connect, its output head grounding.
Integrated preamplifier for charged particle detector the most according to claim 3, it is characterised in that described arteries and veins
Punching forming circuit uses anti-phase input mode, and it includes the first calculus resistance (R3), the second calculus resistance (R4), first micro-
Integrating capacitor (C3), the second calculus electric capacity (C4) and the second amplifier (U1B)；Described first calculus electric capacity (C3), first
Calculus resistance (R3) and the first amplifier (U1B) are sequentially connected in series, the outfan and second of described first calculus resistance (R3)
The inverting input of amplifier (U1B) is connected, after described second calculus resistance (R4) and the second calculus electric capacity (C4) parallel connection
It is connected with inverting input, the outfan of the second amplifier (U1B) respectively.
Integrated preamplifier for charged particle detector the most according to claim 4, it is characterised in that described directly
Stream bias circuit uses electric resistance partial pressure mode, and it includes the first divider resistance (R5), the second divider resistance (R6) and the second filtering
Electric capacity (C6)；One end of described first divider resistance (R5) respectively with one end, first amplifier of the second divider resistance (R6)
(U1A) in-phase input end of with the second amplifier (U1B) is connected, the other end of described first divider resistance (R5) and amplifier electricity
Source (Vdd) input is connected, the other end ground connection of described second divider resistance (R6), described second filter capacitor (C6) and second
Divider resistance (R6) is in parallel.
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