CN109743025B - Wide-input charge sensitive amplifier based on charge distribution network - Google Patents
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- CN109743025B CN109743025B CN201811619696.0A CN201811619696A CN109743025B CN 109743025 B CN109743025 B CN 109743025B CN 201811619696 A CN201811619696 A CN 201811619696A CN 109743025 B CN109743025 B CN 109743025B
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Abstract
The invention provides a wide-input charge sensitive amplifier based on a charge distribution network, which is used for outputting a charge signal generated by space radiation particles incident on a semiconductor detector into a voltage signal, wherein the amplifier comprises a plurality of circuits connected in parallel, and each circuit comprises a coupling capacitor and an amplifying processing module which are connected in series; the coupling capacitor is used for distributing charge signals to the connected amplifying and processing module; the amplifying processing module is used for adjusting the sensitivity of the charge response within a specified dynamic range and outputting voltage signals with different gains. The amplifier has large acquisition dynamic range and low noise, can realize sensitive amplification and readout of charges of more than 2 fc-310 pC, and has low power consumption and device power consumption of less than 20mW; supplying power to a single power supply; and when integrated with other circuit modules, the circuit module does not cause crosstalk.
Description
Technical Field
The invention belongs to the field of charge detection, and particularly relates to a charge distribution network-based wide-input charge sensitive amplifier.
Background
The radiation particles are incident to the semiconductor sensor to generate electron-hole pairs, and the electron-hole pairs are collected under the action of a reverse bias electric field and then converted into voltage signals by the charge sensitive amplifier for measurement. The charge sensitive amplifier with the best performance at present comprises special devices such as A225 and A250 of AMPTEK company, and in addition, the charge sensitive amplifier is independently developed in China; however, these amplifiers typically have an input charge response dynamic range of no more than 3 orders of magnitude, such as an a225 charge sensitivity range of about 1fC to 1000fC, and a charge response dynamic range of about 3 orders of magnitude; a250 has a response range of about 1fC to 500fC, and a charge response dynamic range of less than 3 orders of magnitude, although its feedback capacitance is tunable. Because the measurement range of the space radiation monitoring LET spectrometer is 0.001MeVcm 2/mg-100 MeVcm2/mg, no ready-made charge sensitive amplifier can realize 10 at present 5 The dynamic range charge reading function mainly adopts a plurality of probes to carry out sectional measurement and then is synthesized artificially. Generally, two to three groups of probes can be used for measuring LET spectrum in a dynamic range of 0.001MeVcm2/mg to 100MeVcm2/mg, but the in-place detection requirement on the LET spectrum of a single event effect monitoring chip to be detected cannot be met, meanwhile, probe synthesis is also influenced by complex factors such as probe positions, probe shielding conditions and the like, and a plurality of artificial correction factors can be introduced in post synthesis.
Disclosure of Invention
The wide-input charge sensitive amplifier based on the charge distribution network aims to solve the problem that the prior art cannot meet the requirement of a single probe 10 5 The large dynamic range acquisition function is required, and the synthetic probe introduces many human correction factors to influence the measurement accuracy. To achieve the above object, the present invention provides a wide-input charge-sensitive amplifier based on a charge distribution network for spatially radiating particles incident on a single semiconductor detectorThe generated charge signal is output as a voltage signal, and the amplifier comprises a plurality of circuits connected in parallel, wherein each circuit comprises a coupling capacitor and an amplifying processing module which are connected in series;
the coupling capacitor is used for distributing charge signals to the connected amplifying and processing module;
the amplifying processing module is used for adjusting the sensitivity of the charge response within a specified dynamic range and outputting voltage signals with different gains.
As an improvement of the device, the circuit further comprises a field effect transistor MOSFET for improving the accuracy of the charge distribution of the coupling capacitor; the grid electrode of the field effect transistor MOSFET is connected with the coupling capacitor, the source electrode of the field effect transistor MOSFET is connected with the ground, and the drain electrode of the field effect transistor MOSFET is connected with a power supply through the pull-up resistor.
As an improvement of the device, the charge Q allocated to the coupling capacitance Ci0 of the ith circuit i The method comprises the following steps:
wherein Q is the total charge output by the semiconductor detector; c i The capacitance value of the coupling capacitance of the ith circuit is equal to or more than 1 and equal to or less than N, and is equal to or less than 1 and equal to or less than N, wherein N is the total number of the coupling capacitances.
As an improvement of the device, the amplifying processing module comprises an operational amplifier and a resistance-capacitance feedback circuit;
the non-inverting input end of the operational amplifier is connected with the drain electrode of the MOSFET, the inverting input end of the operational amplifier is connected with the bias power supply, and the output end of the operational amplifier outputs voltage signals with different gains;
and one end of the resistance-capacitance feedback circuit is connected to the grid electrode of the field effect transistor MOSFET, and the other end of the resistance-capacitance feedback circuit is connected to the output end of the operational amplifier and is used for adjusting the output gain of the operational amplifier.
As an improvement of the device, the resistance-capacitance feedback circuit comprises a feedback resistor and a feedback capacitor which are connected in parallel, and the resistance value of the feedback resistor and the capacitance value of the feedback capacitor are used for determining the output gain of the operational amplifier.
As an improvement of the device, the amplifying processing module t of the ith circuit outputs a voltage signal Vi (t) at the moment:
Vi(t)＝Vioe -t/τ i (5)
τi＝ri1cil (6)
Vio＝Qi/cil (7)
wherein, vio is the output voltage of the amplifying module of the ith circuit, and τi is the charge sensitive amplifier time constant of the ith circuit; ri1 is the resistance value of the feedback resistor of the ith circuit, and ci1 is the capacitance value of the feedback capacitor of the ith circuit;
the gain Si of the voltage signal Vi (t) is:
Si＝Vio/Q (8)。
the input charges are distributed to each stage of network and converted into voltage signal output with different gains, namely vo=Q/C; the responsive signal is charge, with 10 5 Is provided.
The invention has the advantages that:
1. the wide input charge sensitive amplifier based on the charge distribution network has large acquisition dynamic range and low noise, can realize charge sensitive amplification reading of more than 2 fc-310 pC, has an equivalent LET value range of about 0.0007MeVcm 2/mg-100.8 MeVcm2/mg in a 300um detector, and covers the detection requirement of a LET spectrometer with a large dynamic range.
2. The wide-input charge sensitive amplifier based on the charge distribution network can adjust the charge sensitivity through an external feedback capacitor, and any interval of more than 5 orders of magnitude in 0.4fC-10nC is satisfied;
3. the wide-input charge sensitive amplifier circuit based on the charge distribution network is simple in structure and is constructed by adopting a resistance-capacitance feedback and operational amplifier;
4. the wide-input charge sensitive amplifier based on the charge distribution network has low power consumption, and the power consumption of devices is less than 20mW;
5. the wide input charge sensitive amplifier based on the charge distribution network supplies power for a single power supply;
6. the wide-input charge sensitive amplifier module based on the charge distribution network has independent functions and does not cause crosstalk when being integrated with other circuit modules.
Drawings
FIG. 1 is an amplifying circuit of a wide input charge sensitive amplifier based on a charge distribution network of the present invention;
FIG. 2 is a schematic diagram of a wide input charge sensitive amplifier package based on a charge distribution network according to the present invention.
Drawing reference numerals
A1, first amplifier A2, second amplifier An, and Nth amplifier
C10, first coupling capacitor C20, second coupling capacitor Cn0, nth coupling capacitor
C11, first feedback capacitor C21, second feedback capacitor Cn1, N feedback capacitor
R11, a first feedback resistor R21, a second feedback resistor Rn1, and an Nth feedback resistor
R10, a first pull-up resistor R20, a second pull-up resistor Rn0 and an Nth pull-up resistor
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
The invention provides a wide input charge sensitive amplifier based on a charge distribution network, which is constructed by an operational amplifier and a resistance-capacitance feedback circuit, and can realize the charge reading function of 2 fc-310 pC on a single semiconductor detector, namely, the charge sensitive reading is more than 10 5 Dynamic range, and measurement range is adjustable, covering any interval of greater than 5 orders of magnitude in 0.4fC-10 nC.
When particles are incident on the semiconductor detector, electron-hole pair signals can be generated, the electron-hole pairs collect charges under the action of reverse bias voltage, and the collected charge signals are input into the wide-input charge sensitive amplifier based on the charge distribution network in a coupling or coupling mode;
as shown in fig. 1, the wide input charge sensitive amplifier based on the charge distribution network comprises a plurality of parallel circuits, wherein each circuit comprises a coupling capacitor and an amplifying processing module which are connected in series;
the amplifying processing module is used for adjusting the sensitivity of the charge response within a specified dynamic range and outputting voltage signals with different gains.
The input end of the amplifying processing module is provided with a coupling capacitor;
the coupling capacitor comprises a first coupling capacitor C10, a second coupling capacitor C20, … and an N coupling capacitor Cn0, wherein the input ends of the coupling capacitors are connected in parallel and connected to the semiconductor detector to form a charge distribution network;
the charge distribution network is realized by coupling capacitance parameters, the charge distribution of the amplifying processing module of each circuit is determined by the coupling capacitance parameters, and the charge distribution formula is as follows:
Q＝Q1+…+Qi+…+Qn (1)
Q1：…：Qi：…：Qn＝C10：…：Ci0：…：Cn0 (2)
q is the total charge output by the semiconductor detector; qi is the charge allocated to the coupling capacitance Ci0 of the ith circuit;
the coupling capacitance Ci0 of the ith circuit distributes charge Q i The method comprises the following steps:
wherein c i The capacitance value of the coupling capacitance Ci0 of the ith circuit is equal to or more than 1 and equal to or less than N, and is equal to or less than 1 and equal to or less than N, wherein N is the total number of the coupling capacitances.
The coupling capacitor is used for coupling and distributing charge signals input by the semiconductor sensor through the field effect transistor MOSFET and outputting the charge signals to the amplifying processing module;
the field effect transistor MOSFET comprises a first transistor D 1 Second transistor D 2 …, N-th transistor D n The method comprises the steps of carrying out a first treatment on the surface of the The grid electrode of the MOSFET is connected with a coupling capacitor, the drain electrode is connected with the same-phase end of the operational amplifier, and the source electrode is connected with the ground; the saidThe field effect transistor MOSFET makes the distribution more accurate.
The amplifier processing module comprises an operational amplifier and a resistance-capacitance feedback circuit.
The amplifier comprises a first amplifier A1, a second amplifier A2 … and An Nth amplifier An;
the operational amplifier chips of LM6172, LM6142, AD8001, OP467 and the like can be selected for realizing the operational amplifier function;
the non-inverting input end of the first amplifier A1 is connected with a node between the first pull-up resistor R10 and the drain electrode of the first transistor D1, the inverting input end of the first amplifier A1 is connected with a bias power supply, the output end of the first amplifier A1 is connected with the output node of the resistance-capacitance feedback circuit, and a voltage signal Vio with the gain of Si is output;
the coupling capacitor at one end of the resistance-capacitance feedback circuit is connected with a node between the grid electrodes of the MOSFET, and the other end of the resistance-capacitance feedback circuit is connected with the output end of the amplifier and is used for adjusting the gain Si of the processing module of the ith circuit amplifier, and the resistance-capacitance feedback circuit comprises a feedback resistor and a feedback capacitor which are connected in parallel;
the feedback resistors comprise a first feedback resistor R11, second feedback resistors R21 and … and an Nth feedback resistor Rn1;
the feedback capacitors comprise a first feedback capacitor C11, second feedback capacitors C21 and … and an Nth feedback capacitor Cn1;
the pull-up resistor comprises a first pull-up resistor R10, second pull-up resistors R20 and … and an Nth pull-up resistor Rn0;
the i-th output voltage signal Vio of the wide input charge sensitive amplifier based on the charge distribution network and the input charge signal Q of the sensor have the following relationship:
Vi(t)＝Vioe -t/τ i (4)
τi＝ri1ci1 (5)
Vio＝Qi/ci1 (6)
Si＝Vio/Q＝ci0/(ci1*(c10+c20+…+cn0)) (7)
wherein, vio is the output voltage of the amplifying module of the ith circuit, and τi is the time constant of the ith circuit; ri1 is the resistance value of the ith feedback resistor Ri1, and Ci1 is the capacitance value of the ith feedback capacitor Ci 1;
the selection of the feedback resistance and capacitance parameters of the charge sensitive amplifier depends on the starting and ending values of the required dynamic range, and any interval larger than 5 orders of magnitude in 0.4fC-10nC is covered, for example, when the feedback capacitance is 1pF, the charge response dynamic range of the charge sensitive amplifier based on the wide input of the charge distribution network is 2 fC-310 pC; different feedback capacitances achieve outputs of different gains.
The amplifying processing modules of different circuits output signals with different gains, the amplifying processing modules of N parallel circuits correspond to N output gains, the N circuit outputs are sampled in sequence through the rear-end ADC signal collector, the collected data is provided with a threshold value, such as 5V power supply, when the collected signals exceed 4.95V, the output of the circuit is considered to be saturated, when the signals output by a certain amplifying processing module are saturated, the subsequent circuit is selected to continue to collect, and the charge Q collected by the semiconductor detector is obtained through calculation according to the signal value of the current circuit.
As shown in fig. 2, which is a schematic diagram of the package of the amplifying circuit, the module pins include: charge input pin, power supply, ground, signal output.
Because the measurement range of the space radiation monitoring LET spectrometer is 0.001MeVcm 2/mg-100 MeVcm2/mg, no existing wide-input charge sensitive amplifier based on a charge distribution network can realize 10 5 The dynamic range charge reading function, through simulation and experiment verification, can realize the charge reading function of more than 10 on a single-chip sensor 5 Dynamic range, and measurement range is adjustable according to a feedback network.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and are not limiting. Although the present invention has been described in detail with reference to the embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the present invention, which is intended to be covered by the appended claims.
Claims (5)
1. A wide input charge sensitive amplifier based on a charge distribution network, for outputting a charge signal generated by space radiation particles incident on a semiconductor detector as a voltage signal, characterized in that the amplifier comprises a plurality of parallel circuits, each circuit comprising a coupling capacitor and an amplifying processing module connected in series;
the coupling capacitor is used for distributing charge signals to the connected amplifying and processing module;
the amplifying processing module is used for adjusting the sensitivity of charge response within a specified dynamic range and outputting voltage signals with different gains;
the input end of the amplifying processing module is provided with a coupling capacitor;
the coupling capacitor comprises a first coupling capacitor C10, a second coupling capacitor C20, … and an N coupling capacitor Cn0, wherein the input ends of the coupling capacitors are connected in parallel and connected to the semiconductor detector to form a charge distribution network;
the charge distribution network is realized by coupling capacitance parameters, the charge distribution of the amplifying processing module of each circuit is determined by the coupling capacitance parameters, and the charge distribution formula is as follows:
Q＝Q 1 +...+Q i +...+Q n (1)
Q 1 ：...：Q i ：...：Q n ＝C10：...：Ci0：...：Cn0 (2)
q is the total charge output by the semiconductor detector; q (Q) i Charge allocated to the coupling capacitance Ci0 of the i-th circuit;
the coupling capacitor Ci0 of the ith circuit distributes charge Q i The method comprises the following steps:
wherein Q is the total charge output by the semiconductor detector; c i The capacitance value of the coupling capacitance of the ith circuit is equal to or more than 1 and equal to or less than N, and is equal to or less than 1 and equal to or less than N, wherein N is the total number of the coupling capacitances.
2. The wide input charge-sensitive amplifier based on a charge distribution network of claim 1, wherein the circuit further comprises a field effect transistor MOSFET for improving the accuracy of coupling capacitance distributed charges; the grid electrode of the field effect transistor MOSFET is connected with the coupling capacitor, the source electrode of the field effect transistor MOSFET is connected with the ground, and the drain electrode of the field effect transistor MOSFET is connected with a power supply through the pull-up resistor.
3. The wide input charge-sensitive amplifier based on a charge distribution network according to claim 2, wherein the amplification processing module comprises an operational amplifier and a resistive-capacitive feedback circuit;
the non-inverting input end of the operational amplifier is connected with the drain electrode of the field effect transistor MOSFET, the inverting input end of the operational amplifier is connected with the bias power supply, and the output end of the operational amplifier outputs voltage signals with different gains;
and one end of the resistance-capacitance feedback circuit is connected to the grid electrode of the field effect transistor MOSFET, and the other end of the resistance-capacitance feedback circuit is connected to the output end of the operational amplifier and is used for adjusting the output gain of the operational amplifier.
4. A wide input charge sensitive amplifier based on a charge distribution network according to claim 3, wherein the resistive-capacitive feedback circuit comprises a feedback resistor and a feedback capacitor connected in parallel for determining the output gain of the operational amplifier based on the resistance value of the feedback resistor and the capacitance value of the feedback capacitor.
5. The wide-input charge-sensitive amplifier based on a charge distribution network according to claim 4, wherein the amplifying processing module t of the ith circuit outputs a voltage signal Vi (t) at the time of t:
Vi(t)＝Vioe -t/τ i (5)
τi＝ri1ci1 (6)
Vio＝Q i /ci1 (7)
wherein, vio is the output voltage of the amplifying module of the ith circuit, and τi is the charge sensitive amplifier time constant of the ith circuit; ri1 is the resistance value of the feedback resistor of the ith circuit, and ci1 is the capacitance value of the feedback capacitor of the ith circuit;
the gain Si of the voltage signal Vi (t) is:
Si＝Vio/Q (8)。
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| CN103888084A (en) * | 2014-03-25 | 2014-06-25 | 中国科学院空间科学与应用研究中心 | Integrated pre-amplifier used for charged particle detector |
| CN105549064A (en) * | 2016-01-05 | 2016-05-04 | 成都理工大学 | High-resolution X-ray energy spectrometer based on Si-PIN detector array |
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| US8260565B2 (en) * | 2008-08-22 | 2012-09-04 | Brookhaven Science Associates, Llc | High dynamic range charge measurements |
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| CN103888084A (en) * | 2014-03-25 | 2014-06-25 | 中国科学院空间科学与应用研究中心 | Integrated pre-amplifier used for charged particle detector |
| CN105549064A (en) * | 2016-01-05 | 2016-05-04 | 成都理工大学 | High-resolution X-ray energy spectrometer based on Si-PIN detector array |
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