CN109212509A - A kind of high-pass filter for Laser radar receiver - Google Patents
A kind of high-pass filter for Laser radar receiver Download PDFInfo
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- CN109212509A CN109212509A CN201811108589.1A CN201811108589A CN109212509A CN 109212509 A CN109212509 A CN 109212509A CN 201811108589 A CN201811108589 A CN 201811108589A CN 109212509 A CN109212509 A CN 109212509A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/487—Extracting wanted echo signals, e.g. pulse detection
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Abstract
The present invention relates to a kind of high-pass filters for Laser radar receiver, comprising: biasing circuit, for providing offset signal；High-pass filtering module connects the biasing circuit, generates second signal, output second signal to late-class circuit for handling the first signal that the offset signal and front stage circuits provide；Charge complementary module connects the biasing circuit, for providing charging and discharging path between the biasing circuit and the late-class circuit when the second signal changes.Charge complementary module of the embodiment of the present invention, it can switch in front stage circuits, provide low-resistance charging and discharging path between biasing circuit and late-class circuit when the output services of high-pass filtering module point changes, shorten switching time to the greatest extent, quickly output services point is made to reach stable state, so that system can be restored to the state of normal work quickly, current potential recovery time is shortened, ensure that the continuity of laser radar detection and output.
Description
Technical field
The invention belongs to laser radar Photoelectric Detections to receive systems technology field, and in particular to one kind connects for laser radar
The high-pass filter of receipts machine.
Background technique
With the development of science and technology, will be used wider and wider for laser radar is general, for example the navigation of automobile or spacecraft with
Anticollision, the scanning of three-dimensional space general picture, meteorological detecting, quality detection etc..Currently, each main research institution of pilotless automobile
Such as Google, Ford, Baidu are all made of scanning type laser radar to collect data；When galloping, pass through laser radar
The distance between two vehicle of real time scan and relative velocity, provide obstacle information for driving system, can reduce accident generation
Probability.
Laser radar issues laser irradiation on detected object using laser emitter, is swashed by what object was reflected back
The avalanche photodide that optical echo is operated in linear model is received and converted to current signal, then by front end analogue receiver
The pulse current that avalanche photodide generates linearly is converted into voltage signal, is then obtained using time figure conversion circuit
The flight-time information of pulse out, or by the amplitude of analog-digital converter acquisition echo impulse, it is finally provided to subsequent number
Signal processor is further processed.Because the detection range of object and the difference of surface reflectivity, are reflected back by object
Return laser beam Strength Changes range it is very big, therefore it is required that laser radar Photoelectric Detection receiver front stage circuits receive model
Enclose very big and gain can dynamic regulation, or the front end receiver circuit module using multiple multiplexings.When front stage circuits are using different
When gain stage or different operating module, the output dc point of front stage circuits be it is different, need to pass through high-pass filtering
The coupling of device is to obtain the consistent stable output of dc point.
In traditional high-pass filter, referring to Figure 1, Fig. 1 is traditional RC high-pass filter topological structure schematic diagram,
When step mutation occurs for the DC potential in capacitor one end, the current potential recovery time of another pole plate are as follows:
Wherein, R is resistance, and C is capacitor's capacity, and N is that voltage restores than (the voltage amplitude and Spline smoothing restored
Voltage amplitude ratio).
Application for high-pass filter in laser radar, since the value of R and C are big, constant is big when system is restored, while high
Detection accuracy requires high voltage to restore ratio, therefore causes the current potential recovery time of traditional high-pass filter extremely long, for laser thunder
Continuity up to detection and output causes strong influence.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of for Laser radar receiver
High-pass filter.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of high-pass filters for Laser radar receiver, comprising:
Biasing circuit, for providing offset signal；
High-pass filtering module connects the biasing circuit, for handling that the offset signal and front stage circuits provide
One signal generates second signal, exports the second signal to late-class circuit；
Charge complementary module connects the biasing circuit, for when the second signal changes, being the biasing
Charging and discharging path is provided between circuit and the late-class circuit.
In one embodiment of the invention, the high-pass filtering module includes:
Capacitor is connected between the front stage circuits and the late-class circuit；
Pseudo- resistance is connected between the biasing circuit and the late-class circuit.
In one embodiment of the invention, the pseudo- resistance includes that current potential clamps down on module, the first metal-oxide-semiconductor (M1) and second
Metal-oxide-semiconductor (M2), wherein
First metal-oxide-semiconductor (the M1) first electrode connect with the late-class circuit, the first metal-oxide-semiconductor (M1) second
Electrode connects the second metal-oxide-semiconductor (M2) third electrode and the current potential clamp down on module, the first metal-oxide-semiconductor (M1) grid
Connect the second metal-oxide-semiconductor (M2) grid and the current potential clamp down on module；
Second metal-oxide-semiconductor (the M2) third electricity grade connect the current potential and clamp down on module, the second metal-oxide-semiconductor (M2)
Four electrodes are connect with the biasing circuit, the second metal-oxide-semiconductor (M2) grid connect the current potential and clamp down on module.
In one embodiment of the invention, the charge complementary module includes control circuit and charge switch, wherein
The control circuit is connect with the charge switch；
The charge switch is connected between the biasing circuit and the late-class circuit.
In one embodiment of the invention, the control circuit includes control impulse circuit and phase inverter, wherein described
Control impulse circuit connects the input terminal of the phase inverter, and the output end of the phase inverter connects the charge switch.
In one embodiment of the invention, the charge switch includes third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4),
In,
Third metal-oxide-semiconductor (the M3) the 5th electrode and the 4th metal-oxide-semiconductor (M4) the 7th electrode be all connected with the rear class
Circuit；
Third metal-oxide-semiconductor (the M3) the 6th electrode and the 4th metal-oxide-semiconductor (M4) the 8th electrode be all connected with the biasing
Circuit；
Third metal-oxide-semiconductor (the M3) grid connect the control impulse circuit；
4th metal-oxide-semiconductor (the M4) grid connect the output end of the phase inverter.
In one embodiment of the invention, the third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) it is mutual symmetry
The metal-oxide-semiconductor of structure.
Another embodiment of the present invention provides a kind of high-pass filter for Laser radar receiver, comprising:
Biasing circuit；
Capacitor is connected between the front stage circuits and the late-class circuit；
Pseudo- resistance is connected between the biasing circuit and the late-class circuit.
In one embodiment of the invention, the pseudo- resistance includes that current potential clamps down on module, the first metal-oxide-semiconductor (M1) and second
Metal-oxide-semiconductor (M2), wherein
The first electrode of first metal-oxide-semiconductor (M1) is connect with the late-class circuit, and the second of first metal-oxide-semiconductor (M1)
Electrode connects the third electrode of second metal-oxide-semiconductor (M2) and the current potential clamps down on module, the grid of first metal-oxide-semiconductor (M1)
The grid and the current potential for connecting second metal-oxide-semiconductor (M2) clamp down on module；
The third electrode of second metal-oxide-semiconductor (M2) connects the current potential and clamps down on module, second metal-oxide-semiconductor (M2) the 4th
Electric grade is connect with the biasing circuit, and the grid of second metal-oxide-semiconductor (M2) connects the current potential and clamps down on module.
Compared with prior art, beneficial effects of the present invention:
1, the present invention uses charge complementary module, can switch in front stage circuits, the output work of high-pass filtering module
Make to provide low-resistance charging and discharging path between biasing circuit and late-class circuit when point changes, shortens switching to the greatest extent
Time quickly makes output services point reach stable state, so that system can be restored to the state of normal work quickly,
Current potential recovery time is shortened, ensure that the continuity of laser radar detection and output.
2, for high-pass filtering module of the invention using pseudo- resistance, Substrate bias and the voltage clamp that metal-oxide-semiconductor is utilized are sub-
The AC resistance for low frequency signal is greatly improved in threshold property, as signal frequency increases, equivalent AC resistance resistance value
It roll-offs reduction；This to obtain extremely low high pass cut off frequency in the case where not using big resistance, not increasing chip area,
Improve the compromise problem between cutoff frequency, passband and area, greatly improved system continuity detectability and
Detection accuracy.
Detailed description of the invention
Fig. 1 is traditional RC high-pass filter topological structure schematic diagram；
Fig. 2 is a kind of module signal of high-pass filter for Laser radar receiver provided in an embodiment of the present invention
Figure；
Fig. 3 is that the high-pass filter topological structure that reply front stage circuits provided in an embodiment of the present invention switch fast and stable shows
It is intended to；
Fig. 4 is the simulation result diagram of traditional high-pass filter；
Fig. 5 is the simulation result diagram that charge complementary module uses a NMOS tube；
Fig. 6 is simulation result of the charge complementary module provided in an embodiment of the present invention using the metal-oxide-semiconductor of mutual symmetry structure
Figure；
Fig. 7 is another high-pass filter topological structure schematic diagram provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 2 is referred to, Fig. 2 is a kind of high-pass filter for Laser radar receiver provided in an embodiment of the present invention
Module diagram, including biasing circuit, high-pass filtering module 100 and charge complementary module 200, wherein
High-pass filtering module 100 is connect with biasing circuit, and is connected across between front stage circuits and late-class circuit, wherein
Biasing circuit provides offset signal, and offset signal includes offset operation point；Front stage circuits provide the first signal, and the first signal includes
The operating point of front stage circuits and AC signal AC.
Further, high-pass filtering module 100 includes capacitor and pseudo- resistance, and capacitance connection is in front stage circuits and late-class circuit
Between, pseudo- resistance is connected between biasing circuit and late-class circuit.
When high-pass filtering module receives the operating point of front stage circuits output and when AC signal AC, capacitor is by front stage circuits
The operating point of output is isolated, and biasing circuit passes through pseudo- resistance and provides offset operation point voltage, and AC signal AC is loaded on
On offset operation point voltage, second signal is generated, then (i.e. offset operation point voltage and AC signal AC) are defeated by second signal
Out to late-class circuit.
When front stage circuits do not export AC signal AC, biasing circuit passes through pseudo- resistance and provides offset operation point voltage and defeated
Out to high-pass filter output point.
Fig. 3 is referred to, Fig. 3 is the high-pass filter that reply front stage circuits provided in an embodiment of the present invention switch fast and stable
Topological structure schematic diagram, wherein Vbias is the output of biasing circuit, and Vctr is the output for controlling impulse circuit, and Vin is prime
The input of circuit output, that is, high-pass filter, Vout are the output of high-pass filter.Further, pseudo- resistance includes that current potential is clamped down on
Module, the first metal-oxide-semiconductor (M1) and the second metal-oxide-semiconductor (M2), wherein current potential clamps down on module voltage and clamps down on the first metal-oxide-semiconductor (M1) and second
Metal-oxide-semiconductor (M2), so that the first metal-oxide-semiconductor (M as pseudo- resistance1) and the second metal-oxide-semiconductor (M2) work in sub-threshold region.
Further, the first metal-oxide-semiconductor (M1) first electrode connect with late-class circuit, the first metal-oxide-semiconductor (M1) second electrode
Connect the second metal-oxide-semiconductor (M2) third electrode and current potential clamp down on module, the first metal-oxide-semiconductor (M1) grid connect the second metal-oxide-semiconductor (M2)
Grid and current potential clamp down on module；Second metal-oxide-semiconductor (M2) third electrode connection current potential clamp down on module, the second metal-oxide-semiconductor (M2)
Four electric grades are connect with biasing circuit, the second metal-oxide-semiconductor (M2) grid connect the current potential and clamp down on module.
In embodiments of the present invention, first electrode, second electrode can be source electrode, drain electrode any one of, third electrode,
4th electric grade is also possible to any one of source electrode, drain electrode；This is because the first metal-oxide-semiconductor (M in the embodiment of the present invention1), second
Metal-oxide-semiconductor (M2) do resistance and use, as resistance in use, metal-oxide-semiconductor does not distinguish source electrode and drain electrode, i.e. the metal-oxide-semiconductor in connection
Source electrode and drain electrode can arbitrarily exchange.
The transfer function of the high-pass filter of the embodiment of the present invention can be expressed as:
Wherein, H (s) is transfer function modulus value, and s is frequency, and R is pseudo- equivalent resistance resistance value, and C is capacitor's capacity.
When frequency s reduction at double, the equivalent resistance R of pseudo- resistance is multiplied, so that transfer function modulus value H (s) is about
It is 1, thus has expanded passband.
The resistance R of traditional high-pass filter is substituted in metal-oxide-semiconductor used in the embodiment of the present invention, and uses voltage clamp mode
So that the metal-oxide-semiconductor work as pseudo- resistance in sub-threshold region, is obtained in low frequency, exchange resistance value is very big, has and increases with frequency
The AC resistance for low frequency signal is greatly improved in equivalent AC resistance with roll-off characteristic, compared to traditional structure,
The free transmission range that high-pass filter is improved in the case where not using big resistance, chip area being greatly reduced, stabilizes high pass
The dc point of filter improves the compromise problem between cutoff frequency, passband and area, system greatly improved
Continuity detectability and detection accuracy.
Charge complementary module 200 connects biasing circuit, and connect with late-class circuit, for changing when second signal
When, charging and discharging path is provided between biasing circuit and late-class circuit.It should be noted that described in the embodiment of the present invention
Binary signal, which changes, refers to that unexpected operating point variation occurs for second signal, such as when front stage circuits needs switch over
When, second signal changes, and variation at this time is exactly unexpected operating point variation；And work as in second signal comprising effectively letter
Number when, second signal can also change, and this variation is needed, and charge complementary module is in an off state at this time, not for
Charging and discharging path is provided between biasing circuit and late-class circuit.
Further, charge complementary module 200 includes control circuit and charge switch, refers to Fig. 2, wherein control electricity
Road is connect with charge switch, and charge switch is connected between biasing circuit and late-class circuit.
When front stage circuits work normally, the output services point of high-pass filter is stablized, at this point, charge complementary module does not rise
Practical function, charge switch are in an off state；When front stage circuits need to switch over, control circuit generates switch letter at this time
Number it is provided to charge switch, charge switch is unfolded into low resistance path within the corresponding period, and biasing circuit passes through low-resistance road
The rapid charge and discharge of diameter, so that the output services point voltage of high-pass filter restores rapidly on the voltage provided to bigoted circuit,
To which the variation that high-pass filter output services point generates is restored rapidly, output services point is stabilized；Work as front stage circuits
When restoring to work normally, control circuit controls charge switch shutdown.
Fig. 3 is referred to, further, control circuit includes control impulse circuit and phase inverter, wherein control impulse circuit
The input terminal of phase inverter is connected, the output end of phase inverter connects charge switch.
Further, charge switch includes third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4), wherein third metal-oxide-semiconductor (M3)
5th electrode and the 4th metal-oxide-semiconductor (M4) the 7th electrode be all connected with late-class circuit；Third metal-oxide-semiconductor (M3) the 6th electrode and the 4th
Metal-oxide-semiconductor (M4) the 8th electrode be all connected with biasing circuit；Third metal-oxide-semiconductor (M3) grid connection control impulse circuit；4th MOS
Manage (M4) grid connection phase inverter output end.
In embodiments of the present invention, the 5th electrode, the 6th electrode can be source electrode, drain electrode any one of, the 7th electrode,
8th electric grade is also possible to any one of source electrode, drain electrode；This is because third metal-oxide-semiconductor (M in the embodiment of the present invention3), the 4th
Metal-oxide-semiconductor (M4) do resistance and use, as resistance in use, metal-oxide-semiconductor does not distinguish source electrode and drain electrode, i.e. the metal-oxide-semiconductor in connection
Source electrode and drain electrode can arbitrarily exchange.
Further, third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) be mutual symmetry structure metal-oxide-semiconductor, third metal-oxide-semiconductor
(M3) it is one of NMOS tube and PMOS tube, then the 4th metal-oxide-semiconductor (M4) be NMOS tube and PMOS tube in another kind.
Further, control circuit is when controlling the shutdown of charge switch, third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) be
It is charged and is turned off simultaneously.
The charge switch of the embodiment of the present invention uses the metal-oxide-semiconductor of mutual symmetry, is switched on and off by control circuit completion,
Mutual symmetry structure, which is weakened, switches caused significant voltage fluctuation in module switch and circuit, weakens digital control signal for straight
The influence for flowing operating potential, significantly reduces the stable time, improves switch speed.
The high-pass filter of the embodiment of the present invention uses charge complementary module, can switch in front stage circuits, high pass
The output services point of filter module provides low-resistance charging and discharging path between biasing circuit and late-class circuit when changing, most
The shortening switching time of big degree, output services point is quickly set to reach stable state, so that system can be restored quickly
To the state of normal work, current potential recovery time is shortened, ensure that the continuity of laser radar detection and output, high degree
On improve whole system performance.
The working principle of the high-pass filter of the embodiment of the present invention are as follows: when prime circuit module needs to switch over, control
Voltage Vctr processed can open charge switch within the corresponding period, and charge switch is the metal-oxide-semiconductor worked under ON state state,
Equivalent resistance is minimum, since charging module and pseudo- resistance are parallel relationships, so the equivalent resistance of entire filter is approximately MOS
Source and drain resistance under pipe ON state, thus basal latency required for system is restored is reduced, restore in desired voltage than constant
In the case where, it substantially reduces current potential and stablizes the time.
Since the channel current and equivalent resistance and drain terminal, grid end and source current potential of metal-oxide-semiconductor are related, the embodiment of the present invention
Using the control logic and control switch of mutual symmetry, to ensure in different dc points, different dc point variations
In the case where direction and different dc point amplitudes of variation, charging module can keep sufficiently low equivalent resistance, avoid
Incomplementarity symmetrical structure substantially overshoot that may be present and low recovery charging current.
Fig. 4, Fig. 5 and Fig. 6 are referred to, Fig. 4 is the simulation result diagram of traditional high-pass filter, and Fig. 5 is charge complementary module
Using the simulation result diagram of a NMOS tube, Fig. 6 is that charge complementary module provided in an embodiment of the present invention uses mutual symmetry knot
The simulation result diagram of the metal-oxide-semiconductor of structure.
In Fig. 4, line a indicates that the output services point of front stage circuits, line b indicate the output point of table high-pass filter；As line a
When the output services point of front stage circuits changes, the output point of corresponding line b high-pass filter can occur simultaneously one it is larger
Variation, then slowly restore to original operating point.
In Fig. 5, charge complementary module is added in traditional high-pass filter, uses a NMOS tube in charge complementary module
As charge switch, in simulation result, line c1 is expressed as charge switch opening, at this time line b high pass when charge switch is opened
The lower pulse-recovery time of filter is significantly less than recovery time when charge switch is not switched on.
In Fig. 6, charge complementary module is added in traditional high-pass filter, uses mutual symmetry knot in charge complementary module
The NMOS tube and PMOS tube of structure are as charge switch, and in simulation result, line c2 is expressed as NMOS tube and PMOS tube is opened, this
When line b on high-pass filter output services point the huge jump of pulse and lower pulse all pressed down when charge switch is opened
System, i.e. the output services point of high-pass filter are effectively stablized.
In order to obtain the consistent stable output of dc point by the coupling of high-pass filter, it is desirable that high-pass filter
Cutoff frequency cannot be too high, otherwise export current potential present at any time logarithm variation, and close to kHz grade of input signal understand quilt
It filters；Also require the cutoff frequency of high-pass filter cannot be too low simultaneously, otherwise high-pass filter direct current caused by handoff procedure
The recovery time that potential change needs extremely to grow；This requires the high-pass filters of laser radar application to switch the stable time and lead to
There is higher performance indicator in frequency characteristic.And in traditional high-pass filter, if the cutoff frequency of high-pass filter is high, though
Current potential recovery time can be so reduced, but higher cutoff frequency makes passband narrow, cannot detect the echo of part low frequency, or even influence
Signal integrity causes wave distortion；And low cutoff frequency can increase current potential recovery time largely, occupy great
Chip area sacrifices the continuity detectability and detection accuracy of system although increasing signal passband.
The high-pass filter of the embodiment of the present invention uses high-pass filtering module and charge complementary module simultaneously, and wherein high pass is filtered
Pseudo- resistance metal-oxide-semiconductor of the wave module using work in sub-threshold region, charge complementary module use the metal-oxide-semiconductor of mutual symmetry as low-resistance
Path, the collective effect of the two improve cutoff frequency present in conventional filter, passband, stablize between time and area
Compromise problem so that high-pass filter have high pass cut off frequency is low, passband is wide, gain switching time is short, output services point
The advantages that stablizing, the continuity detectability and detection accuracy of system are also greatly improved.
Fig. 7 is referred to, Fig. 7 is another high-pass filter topological structure schematic diagram provided in an embodiment of the present invention, including
Biasing circuit, capacitor and pseudo- resistance, wherein for capacitance connection between front stage circuits and late-class circuit, pseudo- resistance is connected to biasing
Between circuit and late-class circuit.
Further, pseudo- resistance includes that current potential clamps down on module, the first metal-oxide-semiconductor (M1) and the second metal-oxide-semiconductor (M2), wherein current potential
It clamps down on module voltage and clamps down on the first metal-oxide-semiconductor (M1) and the second metal-oxide-semiconductor (M2), so that the first metal-oxide-semiconductor (M as pseudo- resistance1) and the
Two metal-oxide-semiconductor (M2) work in sub-threshold region.
Further, the first metal-oxide-semiconductor (M1) first electrode connect with the late-class circuit, the first metal-oxide-semiconductor (M1) second
Electrode connects the second metal-oxide-semiconductor (M2) third electrode and current potential clamp down on module, the first metal-oxide-semiconductor (M1) grid connect the second metal-oxide-semiconductor
(M2) grid and current potential clamp down on module；Second metal-oxide-semiconductor (M2) third electrode connection current potential clamp down on module, the second metal-oxide-semiconductor (M2)
The 4th electric grade connect with biasing circuit, the second metal-oxide-semiconductor (M2) grid connection current potential clamp down on module.Wherein, first electrode,
Two electrodes can be any one of source electrode, drain electrode, and third electrode, the 4th electric grade are also possible to any one of source electrode, drain electrode.
The resistance R of traditional high-pass filter is substituted in metal-oxide-semiconductor used in the embodiment of the present invention, and uses voltage clamp mode
So that the metal-oxide-semiconductor work as pseudo- resistance in sub-threshold region, is obtained in low frequency, exchange resistance value is very big, has and increases with frequency
The AC resistance for low frequency signal is greatly improved in equivalent AC resistance with roll-off characteristic, compared to traditional structure,
The free transmission range that high-pass filter is improved in the case where not using big resistance, chip area being greatly reduced, stabilizes high pass
The dc point of filter improves the compromise problem between cutoff frequency, passband and area, system greatly improved
Continuity detectability and detection accuracy.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of high-pass filter for Laser radar receiver characterized by comprising
Biasing circuit, for providing offset signal；
High-pass filtering module connects the biasing circuit, the first letter provided for handling the offset signal and front stage circuits
Number generate second signal, export the second signal to late-class circuit；
Charge complementary module connects the biasing circuit, for when the second signal changes, being the biasing circuit
Charging and discharging path is provided between the late-class circuit.
2. high-pass filter as described in claim 1, which is characterized in that the high-pass filtering module includes:
Capacitor is connected between the front stage circuits and the late-class circuit；
Pseudo- resistance is connected between the biasing circuit and the late-class circuit.
3. high-pass filter as claimed in claim 2, which is characterized in that the puppet resistance includes that current potential clamps down on module, first
Metal-oxide-semiconductor (M1) and the second metal-oxide-semiconductor (M2), wherein
First metal-oxide-semiconductor (the M1) first electrode connect with the late-class circuit, the first metal-oxide-semiconductor (M1) second electrode
Connect the second metal-oxide-semiconductor (M2) third electrode and the current potential clamp down on module, the first metal-oxide-semiconductor (M1) grid connection
Second metal-oxide-semiconductor (the M2) grid and the current potential clamp down on module；
Second metal-oxide-semiconductor (the M2) third electricity grade connect the current potential and clamp down on module, the second metal-oxide-semiconductor (M2) the 4th electricity
Pole is connect with the biasing circuit, the second metal-oxide-semiconductor (M2) grid connect the current potential and clamp down on module.
4. high-pass filter as described in claim 1, which is characterized in that the charge complementary module includes control circuit and fills
Electric switch, wherein
The control circuit is connect with the charge switch；
The charge switch is connected between the biasing circuit and the late-class circuit.
5. high-pass filter as claimed in claim 4, which is characterized in that the control circuit is including control impulse circuit and instead
Phase device, wherein the control impulse circuit connects the input terminal of the phase inverter, fills described in the output end connection of the phase inverter
Electric switch.
6. high-pass filter as claimed in claim 5, which is characterized in that the charge switch includes third metal-oxide-semiconductor (M3) and the
Four metal-oxide-semiconductor (M4), wherein
Third metal-oxide-semiconductor (the M3) the 5th electrode and the 4th metal-oxide-semiconductor (M4) the 7th electrode be all connected with rear class electricity
Road；
Third metal-oxide-semiconductor (the M3) the 6th electrode and the 4th metal-oxide-semiconductor (M4) the 8th electrode be all connected with the biased electrical
Road；
Third metal-oxide-semiconductor (the M3) grid connect the control impulse circuit；
4th metal-oxide-semiconductor (the M4) grid connect the output end of the phase inverter.
7. high-pass filter as claimed in claim 6, which is characterized in that the third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor
(M4) be mutual symmetry structure metal-oxide-semiconductor.
8. a kind of high-pass filter for Laser radar receiver characterized by comprising
Biasing circuit；
Capacitor is connected between the front stage circuits and the late-class circuit；
Pseudo- resistance is connected between the biasing circuit and the late-class circuit.
9. high-pass filter as claimed in claim 8, which is characterized in that the puppet resistance includes that current potential clamps down on module, first
Metal-oxide-semiconductor (M1) and the second metal-oxide-semiconductor (M2), wherein
The first electrode of first metal-oxide-semiconductor (M1) is connect with the late-class circuit, the second electrode of first metal-oxide-semiconductor (M1)
The third electrode and the current potential for connecting second metal-oxide-semiconductor (M2) clamp down on module, the grid connection of first metal-oxide-semiconductor (M1)
The grid and the current potential of second metal-oxide-semiconductor (M2) clamp down on module；
The third electricity grade of second metal-oxide-semiconductor (M2) connects the current potential and clamps down on module, the 4th electricity of second metal-oxide-semiconductor (M2)
Pole is connect with the biasing circuit, and the grid of second metal-oxide-semiconductor (M2) connects the current potential and clamps down on module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811108589.1A CN109212509B (en) | 2018-09-21 | 2018-09-21 | High-pass filter for laser radar receiver |
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| CN201811108589.1A CN109212509B (en) | 2018-09-21 | 2018-09-21 | High-pass filter for laser radar receiver |
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Citations (4)
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| US6650404B1 (en) * | 2002-05-28 | 2003-11-18 | Analog Modules, Inc. | Laser rangefinder receiver |
| CN2901697Y (en) * | 2006-06-13 | 2007-05-16 | 中国工程物理研究院电子工程研究所 | High-voltage wide-band pulse amplifier |
| CN204794241U (en) * | 2015-07-20 | 2015-11-18 | 广州金升阳科技有限公司 | Controllable discharge device that fills reaches equalizer circuit based on super capacitor of this device |
| CN106923818A (en) * | 2015-12-29 | 2017-07-07 | 深圳先进技术研究院 | For the ECG signal sampling chip of wearable device |
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|---|---|---|---|---|
| US6650404B1 (en) * | 2002-05-28 | 2003-11-18 | Analog Modules, Inc. | Laser rangefinder receiver |
| CN2901697Y (en) * | 2006-06-13 | 2007-05-16 | 中国工程物理研究院电子工程研究所 | High-voltage wide-band pulse amplifier |
| CN204794241U (en) * | 2015-07-20 | 2015-11-18 | 广州金升阳科技有限公司 | Controllable discharge device that fills reaches equalizer circuit based on super capacitor of this device |
| CN106923818A (en) * | 2015-12-29 | 2017-07-07 | 深圳先进技术研究院 | For the ECG signal sampling chip of wearable device |
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| JOHN HYDE ET AL.: "A 300-MS/s 14-bit Digital-to-Analog Converter in Logic CMOS", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
| 朱樟明等: "基于CMOS准浮栅技术的超低压模拟集成电路", 《科学技术与工程》 * |
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