CN2790003Y - APD device work protection circuit - Google Patents
APD device work protection circuit Download PDFInfo
- Publication number
- CN2790003Y CN2790003Y CN 200520082504 CN200520082504U CN2790003Y CN 2790003 Y CN2790003 Y CN 2790003Y CN 200520082504 CN200520082504 CN 200520082504 CN 200520082504 U CN200520082504 U CN 200520082504U CN 2790003 Y CN2790003 Y CN 2790003Y
- Authority
- CN
- China
- Prior art keywords
- apd
- diode
- circuit
- switching device
- control chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Dc-Dc Converters (AREA)
Abstract
The utility model relates to an APD device work protective circuit, which is a work protective circuit which is connected with an interface of an APD bias voltage. The utility model can determine the on-off state of a switch device via comparing a sampling voltage and a reference voltage, and the utility model can dynamically test in entire working period and control the input of the APD bias voltage. Therefore, the utility model can efficiently control the output value of an APD boosted circuit in a setting range and can protect the APD device from breakdown. The work protective circuit is provided with a special IC control chip, an input end of the power supply is respectively and orderly connected with a current storage inductor, a forward connection diode and a sampling circuit. A signal control end of the control chip is connected with a control end of a switching device, two communication ends of the switching device are respectively connected with the positive electrode and the negative electrode of the diode, and an energy storage capacitor is arranged between the negative electrode of the diode and a ground terminal of the switching device.
Description
Technical field
The utility model is the circuit design that the work protection is provided at the circuit that adopts the APD diode.
Background technology
In the transmission communication circuit of present optical communication field, generally adopt the APD diode as receiving element.APD diode (being avalanche diode) has advantages such as high-gain, high sensitivity, thereby comparatively common in long Distance Transmission light communication system.
Because the APD diode need be imported higher bias voltage when work, it is big that existing APD booster circuit exists output voltage ripple, and supply power voltage itself is required do not have special protective circuit than higher for the APD device.The anti-interference and the reliability of this type of booster circuit are relatively poor, usually can puncture the APD device.Because the price of APD is comparatively expensive, under the more flimsy situation of APD device, the maintenance cost of whole APD booster circuit just improves relatively.
The utility model content
APD device work protective circuit described in the utility model; its purpose of design is to address the above problem the work protective circuit that a kind of APD of connection bias voltage interface is provided with deficiency; select to determine the on off operating mode of switching device by comparing sampling voltage and reference voltage; and then in whole work period detection of dynamic and control the input of APD bias voltage; thereby can control the output valve of APD booster circuit effectively in setting range; protection APD device is not breakdown; and can simulate the APD response curve, reach best sensitivity.
Described APD device work protective circuit, its structure mainly has:
One application-specific integrated circuit control chip;
Be connected with one respectively in turn at power input and hold stream inductance, diode of forward connection and a sample circuit.
The signal controlling end of described IC control chip connects a control end of a switching device, and two of switching device are communicated with the positive and negative electrode that end connects diode respectively.
Between the negative pole of diode and switching device earth terminal, connect an energy storage capacitor.
Described sample circuit is connected to the sampling input and the voltage output end of described IC control chip.
The voltage output end of described IC control chip is connected with the APD diode.
As the APD device work protective circuit of above-mentioned structure, its operation principle is:
After described work protective circuit powered on, control chip at first control switch device was in off state, held the stream inductance this moment and began charging; The built-in reference voltage of control chip is obtained the voltage output value of described work protective circuit and is compared with reference voltage by the sampling input.
If output voltage does not reach setting voltage value, then control chip is opened described switching device, hold the stream inductance this moment and discharge by switching device, and diode current flow, be the energy storage capacitor charging simultaneously;
After sample circuit detected output voltage and reaches set point, control chip sent a shutdown signal to switching device; At this moment, hold the stream inductance and restart charging, diode is reversed and ends, and the energy storage capacitor discharge.
Above-mentioned control chip control switch device realizes exporting a stable setting voltage value under a discrete mode of operation; In the whole work period, if sample circuit detects input voltage value and exceeds set point, control chip promptly can above-mentioned work protective circuit cut off.
As the APD device work protective circuit of above-mentioned structure, its control chip can be selected the MAX1932 chip for use;
Its switching device can be selected metal-oxide-semiconductor or triode for use.As select metal-oxide-semiconductor for use, then further improvement project is, the grid of metal-oxide-semiconductor is connected the described stream inductance that holds of its drain electrode connection, its source ground processing with the signal controlling end of MAX1932 chip.
When metal-oxide-semiconductor is opened, hold of drain electrode and the source electrode discharge of stream inductance by being communicated with.
Described sample circuit can connect a dropping resistor between the sampling input of MAX1932 chip and voltage output end.
Comprehensive foregoing, the advantage and the beneficial effect of described APD device work protective circuit are:
1, can take reliable, stable offset operation voltage protection at expensive APD device, prevent the power supply unexpected fluctuation effectively and damage the APD device;
2, above-mentioned protective circuit adopts the PWM design, and voltage output range is bigger, and output accuracy is higher;
3, the output voltage of above-mentioned protective circuit has temperature compensation function, can carry out analog compensation in whole operating temperature range according to selecting the APD response curve for use.
Description of drawings
Fig. 1 is the structural representation of described work protective circuit;
Fig. 2 is the interface circuit figure with the APD device.
Embodiment
The power supply of described protective circuit is 3.3V, is the HVB high voltage bias voltage of realizing that the APD device needs, and the boosting mode of this protective circuit is taked the PWM pulse width modulation mode.Its primary structure is:
Be connected with inductance L 13, diode D1 and dropping resistor R21 respectively in turn from power input.
The signal controlling pin (10) of MAX1932 chip connects the grid of metal-oxide-semiconductor D2, and the drain electrode of metal-oxide-semiconductor D2 connects inductance L 13, and the source electrode of metal-oxide-semiconductor D2 connects the negative pole of diode D1 by capacitor C 8.
Dropping resistor R21 connects the sampling input pin (4) and the voltage output end pin (5) of MAX1932 chip respectively.
As shown in Figure 2, the output of described work protective circuit connects a backward diode and connects the APD device.
After described work protective circuit powered on, the MAX1932 chip was at first controlled metal-oxide-semiconductor and is in off state, held stream inductance L 13 this moment and began charging.
The MAX1932 built-in chip type has the 1.25V reference voltage, and setting voltage compares by sampling and reference voltage, and output voltage does not reach setting voltage, and the MAX1932 driven MOS is opened, and holds stream inductance L 13 this moment and begins discharge, and diode D1 conducting is to energy storage capacitor C8 charging;
After sample circuit detected output voltage and reaches set point, MAX1932 control metal-oxide-semiconductor was closed, hold stream inductance L 13 and restart charging, diode D1 oppositely by and keep energy storage capacitor C8 discharge;
MAX1932 chip controls metal-oxide-semiconductor is operated under the non-continuous mode, and setting voltage is stablized in output one; In the whole work period, whether the MAX1932 chip all can exceed current limit by testing circuit, if exceed set point, the MAX1932 chip will turn-off output.
Claims (4)
1, a kind of APD device work protective circuit, it is characterized in that: described circuit has an IC control chip;
Be connected with one respectively in turn at power input and hold stream inductance, diode of forward connection and a sample circuit;
The signal controlling end of described IC control chip connects a control end of a switching device, and two of switching device are communicated with the positive and negative electrode that end connects diode respectively;
Between the negative pole of diode and switching device earth terminal, connect an energy storage capacitor;
Described sample circuit is connected to the sampling input and the voltage output end of described IC control chip;
The voltage output end of described IC control chip is connected with the APD diode.
2, APD device work protective circuit according to claim 1, it is characterized in that: control chip is selected MAX1932 application-specific integrated circuit chip for use, and its switching device is selected metal-oxide-semiconductor for use.
3, APD device work protective circuit according to claim 2; it is characterized in that: the grid of metal-oxide-semiconductor (D2) is connected with the signal controlling pin (10) of MAX1932 chip; the drain electrode of metal-oxide-semiconductor connects inductance (L13), and source electrode connects the negative pole of diode (D1) by electric capacity (C8).
4, according to claim 2 or 3 described APD device work protective circuits, it is characterized in that: described sample circuit is sampling input pin (4) and the voltage output end pin (5) that dropping resistor (R21) is connected the MAX1932 chip respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200520082504 CN2790003Y (en) | 2005-04-15 | 2005-04-15 | APD device work protection circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200520082504 CN2790003Y (en) | 2005-04-15 | 2005-04-15 | APD device work protection circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2790003Y true CN2790003Y (en) | 2006-06-21 |
Family
ID=36790335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200520082504 Expired - Lifetime CN2790003Y (en) | 2005-04-15 | 2005-04-15 | APD device work protection circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2790003Y (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100414718C (en) * | 2006-12-27 | 2008-08-27 | 天津市德力电子仪器有限公司 | Circuit for realizing large negative of APD bias voltage |
CN102013676A (en) * | 2010-10-21 | 2011-04-13 | 成都优博创技术有限公司 | Protector and protection method of avalanche photodiode (APD) |
CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
CN106786453A (en) * | 2016-12-07 | 2017-05-31 | 深圳市共进电子股份有限公司 | A kind of optical module APD protection circuits |
CN107231199A (en) * | 2017-06-01 | 2017-10-03 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
CN108199353A (en) * | 2017-12-26 | 2018-06-22 | 惠州市德赛西威汽车电子股份有限公司 | A kind of external interface protects circuit |
CN109155675A (en) * | 2016-05-25 | 2019-01-04 | 三菱电机株式会社 | Happen suddenly optical receiver |
CN111431613A (en) * | 2020-03-20 | 2020-07-17 | 青岛海信宽带多媒体技术有限公司 | Optical module |
CN112260247A (en) * | 2020-12-23 | 2021-01-22 | 深圳市迅特通信技术有限公司 | APD protection circuit and device |
-
2005
- 2005-04-15 CN CN 200520082504 patent/CN2790003Y/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100414718C (en) * | 2006-12-27 | 2008-08-27 | 天津市德力电子仪器有限公司 | Circuit for realizing large negative of APD bias voltage |
CN102013676A (en) * | 2010-10-21 | 2011-04-13 | 成都优博创技术有限公司 | Protector and protection method of avalanche photodiode (APD) |
CN102013676B (en) * | 2010-10-21 | 2014-05-14 | 成都优博创技术有限公司 | Protector and protection method of avalanche photodiode (APD) |
CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
CN103457673B (en) * | 2013-07-26 | 2016-03-09 | 厦门优迅高速芯片有限公司 | Improve the method and apparatus of APD optical receiver saturated light power |
CN109155675A (en) * | 2016-05-25 | 2019-01-04 | 三菱电机株式会社 | Happen suddenly optical receiver |
CN106786453A (en) * | 2016-12-07 | 2017-05-31 | 深圳市共进电子股份有限公司 | A kind of optical module APD protection circuits |
CN106786453B (en) * | 2016-12-07 | 2019-09-17 | 深圳市共进电子股份有限公司 | A kind of optical module APD protection circuit |
CN107231199A (en) * | 2017-06-01 | 2017-10-03 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
CN107231199B (en) * | 2017-06-01 | 2019-08-06 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
CN108199353A (en) * | 2017-12-26 | 2018-06-22 | 惠州市德赛西威汽车电子股份有限公司 | A kind of external interface protects circuit |
CN111431613A (en) * | 2020-03-20 | 2020-07-17 | 青岛海信宽带多媒体技术有限公司 | Optical module |
CN112260247A (en) * | 2020-12-23 | 2021-01-22 | 深圳市迅特通信技术有限公司 | APD protection circuit and device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN2790003Y (en) | APD device work protection circuit | |
CN100342647C (en) | Circuit for positive power source inputting load electrifying slow starting | |
CN102684462B (en) | Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof | |
CN109428484A (en) | Power-switching circuit | |
CN2741087Y (en) | Overvoltage and undervoltage slow start protecting circuit of negative power supply | |
CN1821809A (en) | Electric exploration signal transmitter | |
CN101345405B (en) | Protection circuit of power switch device | |
CN202634777U (en) | LED backlight source drive circuit | |
CN201750125U (en) | Short circuit self-locking protection circuit | |
CN102682714B (en) | LED backlight source driving circuit and method for realizing soft startup | |
CN1725927A (en) | LED chip drive circuit | |
CN210517766U (en) | Linear constant-current driving overcurrent protection circuit | |
CN103037558B (en) | Over-current protection circuit of light-emitting diode (LED) constant-current driving circuit | |
CN104185345A (en) | Control device used for LED constant-current driving circuit | |
CN115951603B (en) | MCU main control chip circuit board | |
CN105101572B (en) | A kind of High Power Factor LED drive integrated circults | |
CN101771338A (en) | Switching power supply module with high reliability and low power consumption | |
CN2919675Y (en) | DC-AC convertor | |
CN203103926U (en) | Switching power supply and protective circuit thereof | |
CN2728101Y (en) | Short circuit protection circuit based on P channel MOSFET | |
CN201403045Y (en) | MOS tube driver circuit | |
CN205355781U (en) | Area is to ground short -circuit protection's high limit drive circuit | |
CN111405705B (en) | Dimming LED controller and output short-circuit protection method | |
CN210865095U (en) | Road traffic signal lamp driving and detecting circuit | |
CN208971166U (en) | A kind of switched charge chip and electronic equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Expiration termination date: 20150415 Granted publication date: 20060621 |