CN102013676B - Protector and protection method of avalanche photodiode (APD) - Google Patents
Protector and protection method of avalanche photodiode (APD) Download PDFInfo
- Publication number
- CN102013676B CN102013676B CN201010514637.4A CN201010514637A CN102013676B CN 102013676 B CN102013676 B CN 102013676B CN 201010514637 A CN201010514637 A CN 201010514637A CN 102013676 B CN102013676 B CN 102013676B
- Authority
- CN
- China
- Prior art keywords
- avalanche photodide
- electric current
- protection
- current monitor
- apd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000001012 protector Effects 0.000 title abstract 2
- 238000012544 monitoring process Methods 0.000 claims abstract description 18
- 238000005070 sampling Methods 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000003116 impacting effect Effects 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention discloses a protector and protection method of an avalanche photodiode (APD) in a passive optical network (PON) burst mode. A chip with a two-path current monitoring and boosting function is used to provide a bias voltage and current for the APD. A microcontroller capable of pulse width modulation (PWM) and analog-to-digital conversion is used for modulating the voltage and sampling of the APD. A received signal strength indication (RSSI) fast response system is utilized to finish light current sampling and holding in the presence of an ultrashort optical signal. In the invention, based on a principle of automatic control, when the luminous power of the APD is excessively input, a pulser configured by software is used for reducing the output voltage of a power supply chip, so as to reduce the gain current and response current of the power supply chip, thereby preventing the overcurrent damage of the APD.
Description
Technical field
The present invention relates to the resist technology of avalanche photodide, relate in particular to the resist technology of avalanche photodide under EPON burst mode.
Background technology
APD(avalanche photodide), the light-sensitive element using in optical communication.Tie and add after reverse biased at the P-N of the photodiode of making take silicon or germanium as material, the light of injecting can form photoelectric current after being absorbed by P-N knot.Strengthen reverse biased and can produce the phenomenon of " snowslide " (being that photoelectric current increases sharply exponentially), therefore this diode is called as " avalanche photodide ".The guard method of traditional avalanche photodide; before avalanche photodide; connect a resistance or Current Limiting Diodes; reduce Vapd voltage (bias voltage of avalanche photodiode); but step-down is limited in scope, and it is also limited that multiplication factor declines, and can not make multiplication factor is M=1; in the situation that luminous power is excessive, still can there is to APD the effect of impact.
Summary of the invention
The object of the invention is to propose a kind of Apparatus and method for of protecting avalanche photodide, make APD after impacting through powerful light pulse, still do not sustain damage.
For realizing above object; the invention provides a kind of equipment of protecting avalanche photodide; comprise the microcontroller that contains pulse width generator, analog to digital converter one, analog to digital converter two; the booster power chip that contains boost voltage generator, electric current monitor; RSSI(Received Signal Strength Indication; received signal strength indicator) quick response to network, resistance-capacitance network one and resistance-capacitance network two.The output that boosts of this boost voltage generator is connected with the voltage input end of this electric current monitor by resistance-capacitance network one; This analog to digital converter one is connected with the first via monitoring output of this electric current monitor by the quick response to network of RSSI; This analog to digital converter two is connected with the second tunnel monitoring output of this electric current monitor by resistance-capacitance network two; This pulse width generator is connected with this boost voltage generator; The bias voltage output of this electric current monitor is connected with the negative electrode of this avalanche photodide.
The present invention also provides a kind of method of protecting avalanche photodide, comprises the steps:
A, this analog to digital converter two is carried out to periodic samples monitoring;
B, when this booster power chip is not in the time that guard mode and monitor power are greater than protection threshold value, adjust this pulse width generator and send the duty ratio of signal, control this boost voltage generator and electric current monitor and reduce the bias voltage of this avalanche photodide;
C, when this booster power chip is in the time that guard mode and monitor power are less than de-preservation threshold value, adjust the duty ratio that this pulse width generator sends signal, control this boost voltage generator and electric current monitor and raise the bias voltage of this avalanche photodide to normal operating bias voltage;
D, initiate when sample command when host computer, this analog to digital converter one is by the monitoring of sampling of the quick response to network of RSSI, in the time that monitor power is greater than protection threshold value, adjust the duty ratio that this pulse width generator sends signal, control the bias voltage that this boost voltage generator and electric current monitor reduce this avalanche photodide, and proceed to steps A;
The cycle of this periodic samples monitoring is 50ms.
This protection threshold value is-4dBm.
This de-preservation threshold value is-6dBm.
Adopt method and apparatus of the present invention, can make APD after impacting through powerful light pulse, still do not sustain damage.
Accompanying drawing explanation
Fig. 1 is the equipment structure chart of protection avalanche photodide of the present invention.
Fig. 2 is the flow chart that the present invention protects the guard method of avalanche photodide in the time not initiating RSSI fast power monitoring requirement.
Fig. 3 is the entire flow figure of the guard method of protection avalanche photodide of the present invention.
Embodiment
Further illustrate technical scheme of the present invention below in conjunction with accompanying drawing and by embodiment.
Fig. 1 is the equipment structure chart of protection avalanche photodide of the present invention, and the output that boosts of boost voltage generator is connected with the voltage input end of electric current monitor by resistance-capacitance network one; Analog to digital converter one is connected with the first via monitoring output of electric current monitor by the quick response to network of RSSI; Analog to digital converter two is connected with the second tunnel monitoring output of electric current monitor by resistance-capacitance network two; Pulse width generator is connected with boost voltage generator; The bias voltage output of electric current monitor is connected with the negative electrode of avalanche photodide.
Fig. 2 is the flow chart that the present invention protects the guard method of avalanche photodide in the time not initiating RSSI fast power monitoring requirement:
A, analog to digital converter two is carried out to periodic samples monitoring;
B, when booster power chip is not in the time that guard mode and monitor power are greater than protection threshold value, adjust pulse width generator and send the duty ratio of signal, control boost voltage generator and electric current monitor and reduce the bias voltage of avalanche photodide;
C, when booster power chip is in the time that guard mode and monitor power are less than de-preservation threshold value; adjust the duty ratio that pulse width generator sends signal, control the bias voltage of boost voltage generator and electric current monitor rising avalanche photodide to normal operating bias voltage.
Fig. 3 is the entire flow figure of the guard method of protection avalanche photodide of the present invention:
In the time that host computer is initiated sample command; analog to digital converter one is by the monitoring of sampling of the quick response to network of RSSI; in the time that monitor power is greater than protection threshold value; adjust the duty ratio that pulse width generator sends signal, control the bias voltage of boost voltage generator and electric current monitor reduction avalanche photodide.Then still enter periodic samples monitoring.
Because the method is mainly that microcontroller completes, it is mainly reflected on automatic control algorithm, and concrete algorithm is completed by C language, as follows:
If (F2.sStrF2.RSSIen==3) // automatically recover APD protection, has pin RSSI to interrupt, and interrupts ADC and samples 4 less important on average, has temperature-compensating piecewise fitting receiving end luminous power;
{?F2.sStrF2.sInput.RSSITrigger?=?(GP1DAT?&?0x20)?>>?5;?//read?P1.5
Under if ((A2.sStrA2.rx_Power > 0xF8D) || ((F2.sStrF2.ADC3_RX_MON < 100) & & (F2.sStrF2.sInput.RSSITrigger==0))) // normal bias voltage; exceed-4dBm the threshold value that monitors input optical power; or ADC value is less than normal, just protection
{?F2.sStrF2.sOutput.VAPDEN=0;
A2.sStrA2.status_110.VAPD_Dis=1;
//GP4CLR?=?(1?<<?2)?<<?16;//P4.2?clear
F2.sStrF2.DAC0_VAPD_SET=0xFFF; //APD protection, DAC value corresponding to minimum bias for DAC
DAC0DAT?=?F2.sStrF2.DAC0_VAPD_SET<<16;
}
If (F2.sStrF2.sOutput.VAPDEN==0) //APD protects
If (F2.sStrF2.ADC3_RX_MON > F2.sStrF2.ADC_APDprotect) if // do not detect high light
APDprotect_cnt++;
else
APDprotect_cnt=0; // restart to count
If (APDprotect_cnt>20) // 20 time poll does not all detect high light within 1 second
{?F2.sStrF2.sOutput.VAPDEN=1;
A2.sStrA2.status_110.VAPD_Dis=0;
APDprotect_cnt?=?0;
}
}
}
The above; be only preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, any people who is familiar with this technology is in the disclosed technical scope of the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.
Claims (4)
1. a method that uses the protection avalanche photodide of avalanche photodide protection equipment, described protection equipment comprises:
The microcontroller that contains pulse width generator, analog to digital converter one, analog to digital converter two;
The booster power chip that contains boost voltage generator, electric current monitor;
RSSI(Received Signal Strength Indication, received signal strength indicator) quick response to network;
Resistance-capacitance network one; With
Resistance-capacitance network two;
The output that boosts of described boost voltage generator is connected with the voltage input end of described electric current monitor by resistance-capacitance network one; Described analog to digital converter one is connected with the first via monitoring output of described electric current monitor by the quick response to network of RSSI; Described analog to digital converter two is connected with the second tunnel monitoring output of described electric current monitor by resistance-capacitance network two; Described pulse width generator is connected with described boost voltage generator; The bias voltage output of described electric current monitor is connected with the negative electrode of described avalanche photodide;
It is characterized in that, comprise the steps:
A, described analog to digital converter two is carried out to periodic samples monitoring;
B, when described booster power chip is not in the time that guard mode and monitor power are greater than protection threshold value, adjust described pulse width generator and send the duty ratio of signal, control described boost voltage generator and electric current monitor and reduce the bias voltage of described avalanche photodide;
C, when described booster power chip is in the time that guard mode and monitor power are less than de-preservation threshold value, adjust the duty ratio that described pulse width generator sends signal, control described boost voltage generator and electric current monitor and raise the bias voltage of described avalanche photodide to normal operating bias voltage;
D, initiate when sample command when host computer; described analog to digital converter one is by the monitoring of sampling of the quick response to network of RSSI; in the time that monitor power is greater than protection threshold value; adjust the duty ratio that described pulse width generator sends signal; control the bias voltage that described boost voltage generator and electric current monitor reduce described avalanche photodide, and proceed to steps A.
2. the method for protection avalanche photodide according to claim 1, is characterized in that: the cycle of described periodic samples monitoring is 50ms.
3. the method for protection avalanche photodide according to claim 1, is characterized in that: described protection threshold value is-4dBm.
4. the method for protection avalanche photodide according to claim 1, is characterized in that: described de-preservation threshold value is-6dBm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010514637.4A CN102013676B (en) | 2010-10-21 | 2010-10-21 | Protector and protection method of avalanche photodiode (APD) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010514637.4A CN102013676B (en) | 2010-10-21 | 2010-10-21 | Protector and protection method of avalanche photodiode (APD) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102013676A CN102013676A (en) | 2011-04-13 |
| CN102013676B true CN102013676B (en) | 2014-05-14 |
Family
ID=43843743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010514637.4A Expired - Fee Related CN102013676B (en) | 2010-10-21 | 2010-10-21 | Protector and protection method of avalanche photodiode (APD) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102013676B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103457673B (en) * | 2013-07-26 | 2016-03-09 | 厦门优迅高速芯片有限公司 | Improve the method and apparatus of APD optical receiver saturated light power |
| TWI546641B (en) | 2014-12-03 | 2016-08-21 | 瑞昱半導體股份有限公司 | Biasing voltage generating circuit for avalanche photodiode and related control circuit |
| CN105007125A (en) * | 2015-06-01 | 2015-10-28 | 上海市共进通信技术有限公司 | Optical network terminal apparatus having highlight protection function and method |
| CN104965553B (en) * | 2015-07-01 | 2016-08-24 | 博为科技有限公司 | A kind of avalanche photodide over-voltage protection method and device |
| CN106817164B (en) * | 2015-11-27 | 2019-06-25 | 青岛海信宽带多媒体技术有限公司 | The guard method of avalanche photodide APD and device in a kind of optical module |
| CN106301592B (en) * | 2016-08-23 | 2018-07-03 | 索尔思光电（成都）有限公司 | Protect the method and device of APD receivers |
| WO2018090337A1 (en) * | 2016-11-18 | 2018-05-24 | Source Photonics (Chengdu) Company Limited | Optical receiver, optical transceiver comprising the same, and method of protecting a photodetector in the optical receiver |
| CN107231199B (en) * | 2017-06-01 | 2019-08-06 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
| CN109471009B (en) * | 2017-09-08 | 2023-11-03 | 科大国盾量子技术股份有限公司 | Bias value detection circuit and single photon detector strong light attack detection circuit and method |
| CN109217272B (en) * | 2018-11-07 | 2020-07-07 | 东莞铭普光磁股份有限公司 | APD optical module and protection circuit and protection method thereof |
| CN110445541B (en) * | 2019-08-13 | 2022-01-28 | 青岛海信宽带多媒体技术有限公司 | Control method and device for providing bias voltage for APD (avalanche photo diode), and optical module |
| CN115039052B (en) * | 2020-03-13 | 2024-04-12 | 华为技术有限公司 | Bias voltage adjusting method and device and optical module |
| CN112117743B (en) * | 2020-10-12 | 2022-08-30 | 武汉海达数云技术有限公司 | APD protection circuit and laser scanner |
| CN113489295B (en) * | 2021-06-17 | 2022-06-03 | 北醒（北京）光子科技有限公司 | APD (avalanche photo diode) protection method and circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2790003Y (en) * | 2005-04-15 | 2006-06-21 | 海信集团有限公司 | APD device work protection circuit |
| CN101387658A (en) * | 2008-10-23 | 2009-03-18 | 成都优博创技术有限公司 | Detection circuit for auto detecting avalanche magnitude of voltage of avalanche photodiode and method |
| CN201243289Y (en) * | 2008-08-18 | 2009-05-20 | 青岛海信宽带多媒体技术股份有限公司 | Optical module based on processor control |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0423669D0 (en) * | 2004-10-25 | 2004-11-24 | Bookham Technology Plc | Optical detector |
| US7297922B2 (en) * | 2005-09-28 | 2007-11-20 | Intel Corporation | Optical receiver protection circuit |
-
2010
- 2010-10-21 CN CN201010514637.4A patent/CN102013676B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2790003Y (en) * | 2005-04-15 | 2006-06-21 | 海信集团有限公司 | APD device work protection circuit |
| CN201243289Y (en) * | 2008-08-18 | 2009-05-20 | 青岛海信宽带多媒体技术股份有限公司 | Optical module based on processor control |
| CN101387658A (en) * | 2008-10-23 | 2009-03-18 | 成都优博创技术有限公司 | Detection circuit for auto detecting avalanche magnitude of voltage of avalanche photodiode and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102013676A (en) | 2011-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102013676B (en) | Protector and protection method of avalanche photodiode (APD) | |
| CN102570785B (en) | Direct-current power supply hot plug slow starting control circuit and control method | |
| CN103457673B (en) | Improve the method and apparatus of APD optical receiver saturated light power | |
| CN103606895B (en) | A kind of overvoltage turn-off protection circuit | |
| CN101799520B (en) | Open-phase detection method and detection circuit for three-phase power source | |
| CN107294058A (en) | A kind of overvoltage undervoltage detection circuit applied to solar energy power accumulating power supply | |
| CN103427655B (en) | A kind of control method and controller | |
| TW201537877A (en) | Control device and method of power converter and switching power supply | |
| CN104535179A (en) | Photoelectric detector | |
| CN101447830A (en) | Ethernet passive optical network (EPON) optical line terminal photoelectric module with digital supervision and reporting functions | |
| CN109217272A (en) | A kind of APD optical module and its protection circuit and guard method | |
| CN105186444A (en) | Power supply protection circuit | |
| CN201282326Y (en) | Input power supply overvoltage protection circuit | |
| CN201083789Y (en) | Device for detecting DC far-conveyed power line on current unbalancing | |
| CN203278656U (en) | Switching power supply, and optoelectronic coupler isolation transmission circuit for digital-control switching power supply | |
| CN103762938A (en) | Intelligent power source management circuit applicable to optical energy supply system | |
| CN203377885U (en) | An optical signal transmitting and receiving apparatus and an optical signal transmitting and receiving system | |
| CN201118195Y (en) | Live wire and zero line reverse connection automatic correcting device | |
| CN112630505B (en) | Wide-voltage self-adaptive high-isolation voltage detection circuit and detection method thereof | |
| CN106253948A (en) | A kind of repeater based on CPLD | |
| CN104024137A (en) | Photoelectric Switch For Elevator | |
| CN202374268U (en) | OLT (Optical Line Terminal) module optical power detection circuit | |
| CN107959488B (en) | Solid-state relay circuit with short-circuit protection | |
| CN201393049Y (en) | Passive overcurrent protection device | |
| CN101478138A (en) | Overcurrent protection circuit and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SICHUAN SUPERXON INFORMATION TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SUPERXON TECHNOLOGY (CHENGDU) CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee after: SICHUAN SUPERXON INFORMATION TECHNOLOGY Co.,Ltd. Address before: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee before: Superxon (Chengdu) Technology Ltd. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee after: Nine letter asset management Limited by Share Ltd. Address before: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee before: SICHUAN SUPERXON INFORMATION TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20160602 Address after: 610041, D, 7, Tianfu Software Park, Chengdu hi tech Zone, Sichuan, 201 Patentee after: CHENGDU SUPERXON INFORMATION TECHNOLOGY Co.,Ltd. Address before: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee before: Nine letter asset management Limited by Share Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140514 Termination date: 20191021 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |