CN102013676A - Protector and protection method of avalanche photodiode (APD) - Google Patents
Protector and protection method of avalanche photodiode (APD) Download PDFInfo
- Publication number
- CN102013676A CN102013676A CN2010105146374A CN201010514637A CN102013676A CN 102013676 A CN102013676 A CN 102013676A CN 2010105146374 A CN2010105146374 A CN 2010105146374A CN 201010514637 A CN201010514637 A CN 201010514637A CN 102013676 A CN102013676 A CN 102013676A
- Authority
- CN
- China
- Prior art keywords
- avalanche photodide
- electric current
- protection
- current monitor
- apd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000001012 protector Effects 0.000 title abstract 2
- 238000012544 monitoring process Methods 0.000 claims abstract description 18
- 238000005070 sampling Methods 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000003116 impacting effect Effects 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Abstract
The invention discloses a protector and protection method of an avalanche photodiode (APD) in a passive optical network (PON) burst mode. A chip with a two-path current monitoring and boosting function is used to provide a bias voltage and current for the APD. A microcontroller capable of pulse width modulation (PWM) and analog-to-digital conversion is used for modulating the voltage and sampling of the APD. A received signal strength indication (RSSI) fast response system is utilized to finish light current sampling and holding in the presence of an ultrashort optical signal. In the invention, based on a principle of automatic control, when the luminous power of the APD is excessively input, a pulser configured by software is used for reducing the output voltage of a power supply chip, so as to reduce the gain current and response current of the power supply chip, thereby preventing the overcurrent damage of the APD.
Description
Technical field
The present invention relates to the resist technology of avalanche photodide, relate in particular to the resist technology of avalanche photodide under the EPON burst mode.
Background technology
The APD(avalanche photodide), the light-sensitive element that in optical communication, uses.The P-N that with silicon or germanium is the photodiode made of material tie add reverse biased after, the light of injecting can form photoelectric current after being absorbed by the P-N knot.Strengthen reverse biased and can produce the phenomenon of " snowslide " (being that photoelectric current increases sharply exponentially), therefore this diode is called as " avalanche photodide ".The guard method of traditional avalanche photodide; be before avalanche photodide; connect resistance or current limliting diode; reduce Vapd voltage (bias voltage of avalanche photodiode); but step-down is limited in scope, and it also is limited that multiplication factor descends, and can not make that multiplication factor is M=1; under the excessive situation of luminous power, the effect of impact can be arranged still to APD.
Summary of the invention
The objective of the invention is to propose a kind of Apparatus and method for of protecting avalanche photodide, make APD after impacting, still do not sustain damage through powerful light pulse.
For realizing above purpose; the invention provides a kind of equipment of protecting avalanche photodide; comprise the microcontroller that contains pulse width generator, analog to digital converter one, analog to digital converter two; the booster power chip that contains boost voltage generator, electric current monitor; RSSI(Received Signal Strength Indication; the indication of received signal intensity) quick response to network, resistance-capacitance network one and resistance-capacitance network two.The output that boosts of this boost voltage generator links to each other with the voltage input end of this electric current monitor by resistance-capacitance network one; This analog to digital converter one links to each other with the first via monitoring output of this electric current monitor by the quick response to network of RSSI; This analog to digital converter two links to each other with the second tunnel monitoring output of this electric current monitor by resistance-capacitance network two; This pulse width generator links to each other with this boost voltage generator; The bias voltage output of this electric current monitor links to each other with the negative electrode of this avalanche photodide.
The present invention also provides a kind of method of protecting avalanche photodide, comprises the steps:
A, this analog to digital converter two is carried out periodic samples monitoring;
B, when this booster power chip is not in guard mode and monitor power greater than the protection threshold value, adjust the duty ratio that this pulse width generator sends signal, control the bias voltage that this boost voltage generator and electric current monitor reduce this avalanche photodide;
C, when this booster power chip is in guard mode and monitor power less than the de-preservation threshold value, adjust the duty ratio that this pulse width generator sends signal, control this boost voltage generator and electric current monitor and raise the bias voltage of this avalanche photodide to the operate as normal bias voltage;
D, when host computer is initiated sample command, this analog to digital converter one is by the monitoring of sampling of the quick response to network of RSSI, when monitor power greater than protection during threshold value, adjust the duty ratio that this pulse width generator sends signal, control the bias voltage that this boost voltage generator and electric current monitor reduce this avalanche photodide, and change steps A over to;
The cycle of this periodic samples monitoring is 50ms.
This protection threshold value is-4dBm.
This de-preservation threshold value is-6dBm.
Adopt method and apparatus of the present invention, can make APD after impacting, still do not sustain damage through powerful light pulse.
Description of drawings
Fig. 1 is the equipment structure chart of protection avalanche photodide of the present invention.
Fig. 2 is the present invention protects the guard method of avalanche photodide when not initiating RSSI fast power monitoring requirement a flow chart.
Fig. 3 is the entire flow figure of the guard method of protection avalanche photodide of the present invention.
Embodiment
Further specify technical scheme of the present invention below in conjunction with accompanying drawing and by embodiment.
Fig. 1 is the equipment structure chart of protection avalanche photodide of the present invention, and the output that boosts of boost voltage generator links to each other with the voltage input end of electric current monitor by resistance-capacitance network one; Analog to digital converter one links to each other with the first via monitoring output of electric current monitor by the quick response to network of RSSI; Analog to digital converter two links to each other with the second tunnel monitoring output of electric current monitor by resistance-capacitance network two; Pulse width generator links to each other with boost voltage generator; The bias voltage output of electric current monitor links to each other with the negative electrode of avalanche photodide.
Fig. 2 protects the flow chart of the guard method of avalanche photodide when not initiating RSSI fast power monitoring requirement for the present invention:
A, analog to digital converter two is carried out periodic samples monitoring;
B, when the booster power chip is not in guard mode and monitor power greater than the protection threshold value, adjust the duty ratio that pulse width generator sends signal, control boost voltage generator and electric current monitor reduce the bias voltage of avalanche photodide;
C, when the booster power chip is in guard mode and monitor power less than the de-preservation threshold value; adjust the duty ratio that pulse width generator sends signal, the bias voltage of control boost voltage generator and electric current monitor rising avalanche photodide is to the operate as normal bias voltage.
Fig. 3 is the entire flow figure of the guard method of protection avalanche photodide of the present invention:
When host computer is initiated sample command; analog to digital converter one is by the monitoring of sampling of the quick response to network of RSSI; when monitor power greater than protection during threshold value; adjust the duty ratio that pulse width generator sends signal, control boost voltage generator and electric current monitor reduce the bias voltage of avalanche photodide.Still enter the periodic samples monitoring then.
Because this method mainly is that microcontroller is finished, it is mainly reflected on the automatic control algorithm, and concrete algorithm is finished by the C language, and is as follows:
If (F2.sStrF2.RSSIen==3) // automatically recovers APD protection, has pin RSSI to interrupt, and interrupts ADC and samples 4 less important on average, and temperature-compensating piecewise fitting receiving end luminous power is arranged;
{?F2.sStrF2.sInput.RSSITrigger?=?(GP1DAT?&?0x20)?>>?5;?//read?P1.5
If ((A2.sStrA2.rx_Power〉0xF8D) || ((F2.sStrF2.ADC3_RX_MON＜100) ﹠amp; ﹠amp; (F2.sStrF2.sInput.RSSITrigger==0))) // normally under the bias voltage, monitor input optical power and surpass-the 4dBm threshold value, or the ADC value is less than normal, just protection
{?F2.sStrF2.sOutput.VAPDEN=0;
A2.sStrA2.status_110.VAPD_Dis=1;
//GP4CLR?=?(1?<<?2)?<<?16;//P4.2?clear
F2.sStrF2.DAC0_VAPD_SET=0xFFF; //APD protection, the DAC DAC value of minimum bias correspondence
DAC0DAT?=?F2.sStrF2.DAC0_VAPD_SET<<16;
}
If (F2.sStrF2.sOutput.VAPDEN==0) //APD protects
If (F2.sStrF2.ADC3_RX_MON〉F2.sStrF2.ADC_APDprotect) if // do not detect high light
APDprotect_cnt++;
else
APDprotect_cnt=0; // restart to count
If (APDprotect_cnt〉20) // 20 polls are all not detect high light within 1 second
{?F2.sStrF2.sOutput.VAPDEN=1;
A2.sStrA2.status_110.VAPD_Dis=0;
APDprotect_cnt?=?0;
}
}
}
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (5)
1. the protection equipment of an avalanche photodide is characterized in that, comprising:
The microcontroller that contains pulse width generator, analog to digital converter one, analog to digital converter two;
The booster power chip that contains boost voltage generator, electric current monitor;
RSSI(Received Signal Strength Indication, the indication of received signal intensity) quick response to network;
Resistance-capacitance network one; With
Resistance-capacitance network two;
The output that boosts of described boost voltage generator links to each other with the voltage input end of described electric current monitor by resistance-capacitance network one; Described analog to digital converter one links to each other with the first via monitoring output of described electric current monitor by the quick response to network of RSSI; Described analog to digital converter two links to each other with the second tunnel monitoring output of described electric current monitor by resistance-capacitance network two; Described pulse width generator links to each other with described boost voltage generator; The bias voltage output of described electric current monitor links to each other with the negative electrode of described avalanche photodide.
2. a method of using the protection avalanche photodide of the described equipment of claim 1 is characterized in that, comprises the steps:
A, described analog to digital converter two is carried out periodic samples monitoring;
B, when described booster power chip is not in guard mode and monitor power greater than the protection threshold value, adjust the duty ratio that described pulse width generator sends signal, control the bias voltage that described boost voltage generator and electric current monitor reduce described avalanche photodide;
C, when described booster power chip is in guard mode and monitor power less than the de-preservation threshold value, adjust the duty ratio that described pulse width generator sends signal, control described boost voltage generator and electric current monitor and raise the bias voltage of described avalanche photodide to the operate as normal bias voltage;
D, when host computer is initiated sample command; described analog to digital converter one is by the monitoring of sampling of the quick response to network of RSSI; when monitor power greater than protection during threshold value; adjust the duty ratio that described pulse width generator sends signal; control the bias voltage that described boost voltage generator and electric current monitor reduce described avalanche photodide, and change steps A over to.
3. the method for protection avalanche photodide according to claim 2 is characterized in that: the cycle of described periodic samples monitoring is 50ms.
4. the method for protection avalanche photodide according to claim 2 is characterized in that: described protection threshold value is-4dBm.
5. the method for protection avalanche photodide according to claim 2 is characterized in that: described de-preservation threshold value is-6dBm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010514637.4A CN102013676B (en) | 2010-10-21 | 2010-10-21 | Protector and protection method of avalanche photodiode (APD) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010514637.4A CN102013676B (en) | 2010-10-21 | 2010-10-21 | Protector and protection method of avalanche photodiode (APD) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102013676A true CN102013676A (en) | 2011-04-13 |
| CN102013676B CN102013676B (en) | 2014-05-14 |
Family
ID=43843743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010514637.4A Expired - Fee Related CN102013676B (en) | 2010-10-21 | 2010-10-21 | Protector and protection method of avalanche photodiode (APD) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102013676B (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
| CN104965553A (en) * | 2015-07-01 | 2015-10-07 | 博为科技有限公司 | Avalanche photodiode overvoltage protection method and device |
| CN105007125A (en) * | 2015-06-01 | 2015-10-28 | 上海市共进通信技术有限公司 | Optical network terminal apparatus having highlight protection function and method |
| CN106301592A (en) * | 2016-08-23 | 2017-01-04 | 索尔思光电（成都）有限公司 | The method and device of protection APD receptor |
| CN106817164A (en) * | 2015-11-27 | 2017-06-09 | 青岛海信宽带多媒体技术有限公司 | The guard method of avalanche photodide APD and device in a kind of optical module |
| CN107204811A (en) * | 2016-11-18 | 2017-09-26 | 索尔思光电（成都）有限公司 | The method of photodetector in optical receiver, the optical transceiver comprising it, and protection optical receiver |
| CN107231199A (en) * | 2017-06-01 | 2017-10-03 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
| US9882069B2 (en) | 2014-12-03 | 2018-01-30 | Realtek Semiconductor Corp. | Biasing voltage generating circuit for avalanche photodiode and related control circuit |
| CN109217272A (en) * | 2018-11-07 | 2019-01-15 | 东莞铭普光磁股份有限公司 | A kind of APD optical module and its protection circuit and guard method |
| CN109471009A (en) * | 2017-09-08 | 2019-03-15 | 科大国盾量子技术股份有限公司 | Bias current value detection circuit and single-photon detector intensity light attack detection circuit, method |
| CN110445541A (en) * | 2019-08-13 | 2019-11-12 | 青岛海信宽带多媒体技术有限公司 | Control method, device and the optical module of bias voltage are provided to APD |
| CN112117743A (en) * | 2020-10-12 | 2020-12-22 | 武汉海达数云技术有限公司 | APD protection circuit and laser scanner |
| WO2021179318A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Bias voltage adjusting method and apparatus, and light module |
| CN113489295A (en) * | 2021-06-17 | 2021-10-08 | 北醒（北京）光子科技有限公司 | APD (avalanche photo diode) protection method and circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006046013A1 (en) * | 2004-10-25 | 2006-05-04 | Bookham Technology Plc | Optical detector |
| CN2790003Y (en) * | 2005-04-15 | 2006-06-21 | 海信集团有限公司 | APD device work protection circuit |
| US20070075215A1 (en) * | 2005-09-28 | 2007-04-05 | Giovannini Thomas J | Optical receiver protection circuit |
| CN101387658A (en) * | 2008-10-23 | 2009-03-18 | 成都优博创技术有限公司 | Detection circuit for auto detecting avalanche magnitude of voltage of avalanche photodiode and method |
| CN201243289Y (en) * | 2008-08-18 | 2009-05-20 | 青岛海信宽带多媒体技术股份有限公司 | Optical module based on processor control |
-
2010
- 2010-10-21 CN CN201010514637.4A patent/CN102013676B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006046013A1 (en) * | 2004-10-25 | 2006-05-04 | Bookham Technology Plc | Optical detector |
| CN2790003Y (en) * | 2005-04-15 | 2006-06-21 | 海信集团有限公司 | APD device work protection circuit |
| US20070075215A1 (en) * | 2005-09-28 | 2007-04-05 | Giovannini Thomas J | Optical receiver protection circuit |
| CN201243289Y (en) * | 2008-08-18 | 2009-05-20 | 青岛海信宽带多媒体技术股份有限公司 | Optical module based on processor control |
| CN101387658A (en) * | 2008-10-23 | 2009-03-18 | 成都优博创技术有限公司 | Detection circuit for auto detecting avalanche magnitude of voltage of avalanche photodiode and method |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
| CN103457673B (en) * | 2013-07-26 | 2016-03-09 | 厦门优迅高速芯片有限公司 | Improve the method and apparatus of APD optical receiver saturated light power |
| US9882069B2 (en) | 2014-12-03 | 2018-01-30 | Realtek Semiconductor Corp. | Biasing voltage generating circuit for avalanche photodiode and related control circuit |
| CN105007125A (en) * | 2015-06-01 | 2015-10-28 | 上海市共进通信技术有限公司 | Optical network terminal apparatus having highlight protection function and method |
| CN104965553B (en) * | 2015-07-01 | 2016-08-24 | 博为科技有限公司 | A kind of avalanche photodide over-voltage protection method and device |
| CN104965553A (en) * | 2015-07-01 | 2015-10-07 | 博为科技有限公司 | Avalanche photodiode overvoltage protection method and device |
| CN106817164A (en) * | 2015-11-27 | 2017-06-09 | 青岛海信宽带多媒体技术有限公司 | The guard method of avalanche photodide APD and device in a kind of optical module |
| CN106817164B (en) * | 2015-11-27 | 2019-06-25 | 青岛海信宽带多媒体技术有限公司 | The guard method of avalanche photodide APD and device in a kind of optical module |
| CN106301592A (en) * | 2016-08-23 | 2017-01-04 | 索尔思光电（成都）有限公司 | The method and device of protection APD receptor |
| CN106301592B (en) * | 2016-08-23 | 2018-07-03 | 索尔思光电（成都）有限公司 | Protect the method and device of APD receivers |
| CN107204811A (en) * | 2016-11-18 | 2017-09-26 | 索尔思光电（成都）有限公司 | The method of photodetector in optical receiver, the optical transceiver comprising it, and protection optical receiver |
| WO2018090337A1 (en) * | 2016-11-18 | 2018-05-24 | Source Photonics (Chengdu) Company Limited | Optical receiver, optical transceiver comprising the same, and method of protecting a photodetector in the optical receiver |
| US10305605B2 (en) | 2016-11-18 | 2019-05-28 | Source Photonics (Chengdu) Co., Ltd. | Optical receiver, optical transceiver comprising the same, and method of protecting a photodetector in the optical receiver with a transient event or a transient state determination |
| CN107231199A (en) * | 2017-06-01 | 2017-10-03 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
| CN107231199B (en) * | 2017-06-01 | 2019-08-06 | 上海市共进通信技术有限公司 | Optical module with overcurrent protection function |
| CN109471009B (en) * | 2017-09-08 | 2023-11-03 | 科大国盾量子技术股份有限公司 | Bias value detection circuit and single photon detector strong light attack detection circuit and method |
| CN109471009A (en) * | 2017-09-08 | 2019-03-15 | 科大国盾量子技术股份有限公司 | Bias current value detection circuit and single-photon detector intensity light attack detection circuit, method |
| CN109217272A (en) * | 2018-11-07 | 2019-01-15 | 东莞铭普光磁股份有限公司 | A kind of APD optical module and its protection circuit and guard method |
| CN110445541B (en) * | 2019-08-13 | 2022-01-28 | 青岛海信宽带多媒体技术有限公司 | Control method and device for providing bias voltage for APD (avalanche photo diode), and optical module |
| CN110445541A (en) * | 2019-08-13 | 2019-11-12 | 青岛海信宽带多媒体技术有限公司 | Control method, device and the optical module of bias voltage are provided to APD |
| WO2021179318A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Bias voltage adjusting method and apparatus, and light module |
| CN115039052A (en) * | 2020-03-13 | 2022-09-09 | 华为技术有限公司 | Bias voltage adjusting method and device and optical module |
| CN115039052B (en) * | 2020-03-13 | 2024-04-12 | 华为技术有限公司 | Bias voltage adjusting method and device and optical module |
| CN112117743A (en) * | 2020-10-12 | 2020-12-22 | 武汉海达数云技术有限公司 | APD protection circuit and laser scanner |
| CN112117743B (en) * | 2020-10-12 | 2022-08-30 | 武汉海达数云技术有限公司 | APD protection circuit and laser scanner |
| CN113489295A (en) * | 2021-06-17 | 2021-10-08 | 北醒（北京）光子科技有限公司 | APD (avalanche photo diode) protection method and circuit |
| CN113489295B (en) * | 2021-06-17 | 2022-06-03 | 北醒（北京）光子科技有限公司 | APD (avalanche photo diode) protection method and circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102013676B (en) | 2014-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102013676B (en) | Protector and protection method of avalanche photodiode (APD) | |
| CN103457673B (en) | Improve the method and apparatus of APD optical receiver saturated light power | |
| CN103606895B (en) | A kind of overvoltage turn-off protection circuit | |
| CN202978951U (en) | Compensation circuit used for increasing receiving dynamic range of optical burst receiver | |
| CN101447830B (en) | Ethernet passive optical network (EPON) optical line terminal photoelectric module with digital supervision and reporting functions | |
| CN201429467Y (en) | Detection circuit for APD burst incident light strength | |
| CN203522167U (en) | Overload protective circuit of photodetector with avalanche photodiode and trans-impedance amplifier | |
| CN107294058A (en) | A kind of overvoltage undervoltage detection circuit applied to solar energy power accumulating power supply | |
| US20120194957A1 (en) | Anovel Protection Method Of Direct Currrent Converter Valve Thyristor In Discontinuous Current Mode | |
| CN103427655B (en) | A kind of control method and controller | |
| CN203590010U (en) | EAST-NBI high-voltage power supply undervoltage protection device | |
| CN103389451A (en) | Testing method and testing device of avalanche photodiode | |
| CN109217272A (en) | A kind of APD optical module and its protection circuit and guard method | |
| CN201282326Y (en) | Input power supply overvoltage protection circuit | |
| CN100561896C (en) | A kind of receiver of avalanche photodiode electric supply installation and method | |
| CN103297121B (en) | A kind of RSSI value curve-fitting method and system | |
| CN103364627B (en) | Autoreclose breaker leakage current detection circuit | |
| CN203039948U (en) | LED constant-current detection circuit and LED constant-current driving circuit | |
| CN103762938A (en) | Intelligent power source management circuit applicable to optical energy supply system | |
| CN203377885U (en) | An optical signal transmitting and receiving apparatus and an optical signal transmitting and receiving system | |
| CN203423692U (en) | Compatible average optical power monitoring circuit | |
| CN201369735Y (en) | EPON local side photoelectric module with digital monitoring and reporting functions | |
| CN201215955Y (en) | Light transmission system | |
| CN202374268U (en) | OLT (Optical Line Terminal) module optical power detection circuit | |
| CN106253948A (en) | A kind of repeater based on CPLD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SICHUAN SUPERXON INFORMATION TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SUPERXON TECHNOLOGY (CHENGDU) CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee after: SICHUAN SUPERXON INFORMATION TECHNOLOGY Co.,Ltd. Address before: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee before: Superxon (Chengdu) Technology Ltd. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee after: Nine letter asset management Limited by Share Ltd. Address before: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee before: SICHUAN SUPERXON INFORMATION TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20160602 Address after: 610041, D, 7, Tianfu Software Park, Chengdu hi tech Zone, Sichuan, 201 Patentee after: CHENGDU SUPERXON INFORMATION TECHNOLOGY Co.,Ltd. Address before: 7, No. 216, No. 610041 South City Road, Chengdu hi tech Zone, Sichuan, 101, 201 Patentee before: Nine letter asset management Limited by Share Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140514 Termination date: 20191021 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |