CN107231199A - Optical module with overcurrent protection function - Google Patents
Optical module with overcurrent protection function Download PDFInfo
- Publication number
- CN107231199A CN107231199A CN201710404543.3A CN201710404543A CN107231199A CN 107231199 A CN107231199 A CN 107231199A CN 201710404543 A CN201710404543 A CN 201710404543A CN 107231199 A CN107231199 A CN 107231199A
- Authority
- CN
- China
- Prior art keywords
- optical module
- apd
- avalanche photodide
- power supply
- booster circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
Abstract
The invention provides a kind of optical module with overcurrent protection function; when optical module receives strong light; the electric current for detecting the avalanche photodide for flowing into optical assembly exceeds default threshold current Ith; the power supply chip then closed in booster circuit; the voltage of the described avalanche photodide of reduction, plays a protective role.Using the over-current protection method applied to optical module in the present invention, optical module is solved in the case where receiving strong light, the problem of avalanche photodide APD in optical assembly BOSA flows into excessive photoelectric current, damaged.
Description
Technical field
Designed the present invention relates to technical field of photo communication, more particularly to a kind of overcurrent protection applied to optical module, specifically
It is related to a kind of optical module with overcurrent protection function.
Background technology
In recent years, optical communications industry is developed rapidly.EPON (PON) is most widely applied in current optical access network
Technology, it be on broadband access is solved the problems, such as it is a kind of it is economical, face the future multiple services user's access technology.PON technologies
It is related to opto-electronic conversion and electro-optic conversion.And these functions are all realized by optical module.Kept away in the practical application of optical module
The situation of strong light is unavoidably accessed, it is necessary to which optical module itself has highlight protection function.
The optical assembly BOSA of major part optical module receiving side uses avalanche photodide APD at present.Snowslide light
Electric diode APD operationally needs the high reverse biased of comparison, therefore needs to give avalanche photodide APD in optical module
Additional extra DC-DC booster circuit.When the luminous power of input is constant, the photoelectric current that avalanche photodide APD is produced is
Increase with the increase of reverse biased, reduce with the reduction of reverse biased.DC-DC booster circuit is supplied to avalanche optoelectronic
Diode APD voltage is invariable, when input optical power can be produced more than 0~-4dBm, avalanche photodide APD
The probability that APD is damaged under excessive photoelectric current (0.5~1mA of ＞), this situation is high.
The content of the invention
The purpose of the present invention is that the shortcoming for overcoming above-mentioned prior art can prevent light under intense light conditions there is provided one kind
The optical module with overcurrent protection function that avalanche photodide APD in the optical assembly BOSA of module is damaged.
To achieve these goals, the optical module with overcurrent protection function of the invention has following composition：
This has the optical module of overcurrent protection function, including avalanche photodide APD and booster circuit, described snow
Avalanche photo diode APD is arranged in the optical assembly BOSA in optical module, and avalanche photodide APD and described boosting
Circuit is connected, and described booster circuit provides reverse biased to described avalanche photodide APD makes described snowslide light
Electric diode APD is in running order, it is characterised in that between described avalanche photodide APD and booster circuit also
It is provided with a current foldback circuit, the enable for the power supply chip that described current foldback circuit is acted in described booster circuit
End, described current foldback circuit enables described power supply core when the luminous power that the optical module is received meets a preset range
Piece, the reverse biased of its work can be supplied by described booster circuit is provided to described avalanche photodide APD, and in the light
The luminous power that module is received is unsatisfactory for closing described power supply chip during the preset range, described booster circuit is stopped to institute
The avalanche photodide APD stated, which is provided, can supply the reverse biased of its work, until the luminous power that the optical module is received is full again
The foot preset range.
It is preferred that described current foldback circuit provides a threshold current for described optical module, described optical module connects
When the luminous power of receipts meets the preset range, the electric current for flowing into described avalanche photodide APD is less than the threshold current, by
Described current foldback circuit enables the power supply chip in described booster circuit；The luminous power that described optical module is received is discontented with
During the foot preset range, the electric current for flowing into described avalanche photodide APD is more than the threshold current, is protected by described excessively stream
The power supply chip that protection circuit is closed in described booster circuit.
More preferably, described current foldback circuit includes the pull-up resistor R1 for being arranged at described power supply chip Enable Pin,
Enable level VCC is obtained by the pull-up resistor R1 when luminous power to be received in optical module meets preset range and enables the electricity
Source chip, described current foldback circuit also includes one the 4th resistance R4, PMOS and NMOS tube, wherein described avalanche optoelectronic
Diode APD is connected to described booster circuit by the 4th resistance R4, and the grid and source electrode of described PMOS are connected to
The two ends of the 4th described resistance R4, the grid and source electrode of described NMOS tube are connected to one second divider resistance R3 two ends,
The second divider resistance R3 one end is grounded, and the other end is connected to the drain electrode of described PMOS by one first divider resistance R2,
The drain electrode of the NMOS tube is connected to the Enable Pin of described power supply chip.
It is particularly preferred that the enable level VCC that pull-up resistor R1 resistance meets its generation can enable wanting for the power supply chip
Ask, described power supply is made when the electric current of the avalanche photodide APD described in inflow is less than described threshold current
Power supply chip described in energy, and described PMOS grid source conducting voltage and NMOS tube grid source conducting voltage with it is described
Preset range matches.
It is preferred that described PMOS and NMOS tube are the metal-oxide-semiconductor with the quick characteristic for opening shut-off, switching speed exists
The magnitude of few tens of nano-seconds.
It is preferred that described booster circuit is a DC-DC booster circuit.
Using the optical module with overcurrent protection function of the present invention, due to current foldback circuit therein to 1 PMOS
Pipe and 1 NMOS tube and several resistance, therefore design very succinct, and cost is very low, and due to PMOS and NMOS tube
The quick characteristic for opening shut-off, when strong light is removed, DC-DC booster circuit can automatically reply normal working condition, without
Need to restart optical module, and the extra power consumption very little that the over-current protection method is brought.Using the technical scheme in the present invention, solve
Optical module is in the case where receiving strong light, and BOSA APD is due to flowing into the problem of excessive photoelectric current is damaged.
Brief description of the drawings
Fig. 1 for the present invention in optical module functional block diagram.
Fig. 2 is connected to the circuit theory diagrams between BOSA and booster circuit for the current foldback circuit in the present invention.
Embodiment
In order to more clearly describe the technology contents of the present invention, carried out with reference to specific embodiment further
Description.
Referring to Fig. 1, an optical module with overcurrent protection function, including avalanche photodide APD and boosting
Circuit, described avalanche photodide APD is arranged in the optical assembly BOSA in optical module, and the avalanche photodide
APD is connected with described booster circuit, and described booster circuit provides reverse biased to described avalanche photodide APD
Make described avalanche photodide APD in running order, it is characterised in that described avalanche photodide APD and
A current foldback circuit is additionally provided between booster circuit, described current foldback circuit is acted in described booster circuit
The Enable Pin of power supply chip, described current foldback circuit is enabled when the luminous power that the optical module is received meets a preset range
Described power supply chip, described booster circuit is provided to described avalanche photodide APD can be for the reverse of its work
Bias, and described power supply chip is closed when the luminous power that the optical module is received is unsatisfactory for the preset range, make described liter
Volt circuit, which stops providing to described avalanche photodide APD, can supply the reverse biased of its work, until the optical module is received
Luminous power meet the preset range again.
Described current foldback circuit provides a threshold current, the light work(that described optical module is received for described optical module
When rate meets the preset range, the electric current for flowing into described avalanche photodide APD is less than the threshold current, by described mistake
Flow the power supply chip in the described booster circuit of protection circuit enable；The luminous power that described optical module is received is unsatisfactory for this and preset
During scope, the electric current for flowing into described avalanche photodide APD is more than the threshold current, is closed by described current foldback circuit
The power supply chip closed in described booster circuit.
In a kind of specific embodiment, described current foldback circuit includes being arranged at described power supply chip enable
The pull-up resistor R1 at end, is obtained by the pull-up resistor R1 when luminous power to be received in optical module meets preset range and enabled
Level VCC enables the power supply chip, and described current foldback circuit also includes one the 4th resistance R4, PMOS and NMOS tube, its
Described in avalanche photodide APD be connected to described booster circuit by the 4th resistance R4, described PMOS
Grid and source electrode are connected to the two ends of the 4th described resistance R4, and the grid and source electrode of described NMOS tube are connected to one second point
Piezoresistance R3 two ends, the second divider resistance R3 one end ground connection, the other end is connected to described by one first divider resistance R2
PMOS drain electrode, the drain electrode of the NMOS tube is connected to the Enable Pin of described power supply chip.
The enable level VCC that pull-up resistor R1 resistance meets its generation can enable the requirement of the power supply chip, make institute
The power supply stated can enable described when the electric current of the avalanche photodide APD described in inflow is less than described threshold current
Power supply chip, and described PMOS grid source conducting voltage and NMOS tube grid source conducting voltage with described preset range
Match.
Described PMOS and NMOS tube are the metal-oxide-semiconductor with the quick characteristic for opening shut-off, and switching speed is received tens of
Second magnitude, to meet the luminous power of optical module input at preset range edge, described PMOS and NMOS tube are entered
The quick demand for opening shut-off of row.
In a kind of specific embodiment, described booster circuit is a DC-DC booster circuit.
Referring to Fig. 2, in a kind of specific embodiment, the optical module with overcurrent protection function is except described in Fig. 1
Outside modules, in addition to PMOS, NMOS tube and resistance, it is electric that the present invention adds an overcurrent protection in booster circuit rear end
Road, when the photoelectric current for flowing into avalanche photodide APD generations is more than the threshold current Ith that current foldback circuit is set, is opened
Metal-oxide-semiconductor is opened, power supply chip, reduction avalanche photodide APD voltage, the light for producing avalanche photodide APD is closed
Electric current is less than the threshold current set, it is achieved thereby that the overcurrent protection function of optical module.When strong light is eliminated, the DC-DC liters
Volt circuit has the metal-oxide-semiconductor of quick unlatching turn-off function due to being used in current foldback circuit, therefore can also recover in time
Avalanche photodide APD normal work.And because the defencive function to avalanche photodide APD is by closing power supply
What chip was realized, therefore the extra power consumption brought is smaller.
Normal range (NR) is in less than in the case of -4dBm in the input optical power of the optical module, flows into BOSA snowslide light
Electric diode APD electric currents I is less than Ith, and wherein Ith=VGS/R4, I is less than grid source by the 4th resistance R4 voltage VGS produced
Conducting voltage VGSth, now PMOS Q2 is closed mode, and the voltage of the second divider resistance R3 both sides is 0, and NMOS tube Q1 is also
The state of closing, now the enable pin of the power supply chip of booster circuit VCC is pulled upward to by pull-up resistor R1, power supply chip is just
The ena-bung function of normal working power chip is usually that high level is effective, for the effective situation of low level, can combine the present invention
Principle adjustment circuit.Now avalanche photodide APD voltage is normal, and whole circuit is in normal operating conditions.
In the case where inputting strong light, the avalanche photodide APD electric currents I for flowing into optical assembly BOSA is more than Ith, wherein
Ith=VGS/R4, I are more than grid source conducting voltage VGSth by the 4th resistance R4 voltage VGS produced, and PMOS Q2 is opened rapidly
Open, the voltage of the second divider resistance R3 both sides is VAPD × R3/ (R2+R3), commonly use the VGS maximum working voltages of metal-oxide-semiconductor for ±
20V, VAPD are generally higher than 30V, it is therefore desirable to carry out partial pressure using R2 and R3, and NMOS tube Q1 is also opened rapidly, and now boost electricity
The enable pin of the power supply chip on road pulls down to ground by Q1, and power supply chip is closed without level is enabled.Now avalanche optoelectronic two
Pole pipe APD voltage declines, and the avalanche photodide APD electric currents for flowing into optical assembly BOSA are also dropped rapidly to the threshold value of setting
Electric current.
In the case where strong light is eliminated, the avalanche photodide APD electric currents I for flowing into optical assembly BOSA is less than Ith wherein
The voltage VGS that Ith=VGS/R4, I are produced by the 4th resistance is less than VGSth, and PMOS Q2 is re-closing off, the second divider resistance
The voltage of R3 both sides is 0, and NMOS tube Q1 is also switched off, and now the enable pin of the power supply chip in booster circuit passes through pull-up resistor
R1 is pulled upward to VCC, and power supply chip recovers normal work.Now avalanche photodide APD voltage recovers normal, whole circuit
Again it is in normal operating conditions.
Using the optical module with overcurrent protection function of the present invention, due to only using 1 PMOS in current foldback circuit
Pipe and 1 NMOS tube and several resistance, therefore design very succinct, and cost is very low, and due to PMOS and NMOS tube
The quick characteristic for opening shut-off, when strong light is removed, DC-DC booster circuit can automatically reply normal working condition, without
Need to restart optical module, and the extra power consumption very little that the over-current protection method is brought.Using the technical scheme in the present invention, solve
Optical module is in the case where receiving strong light, and optical assembly BOSA avalanche photodide APD is due to flowing into excessive photoelectricity
The problem of outflow is now damaged.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that can still make
Various modifications and alterations are without departing from the spirit and scope of the present invention.Therefore, specification and drawings are considered as illustrative
And it is nonrestrictive.
Claims (6)
1. a kind of optical module with overcurrent protection function, including avalanche photodide (APD) and booster circuit, described
Avalanche photodide (APD) is arranged in the optical assembly in optical module (BOSA), and the avalanche photodide (APD) and institute
The booster circuit stated is connected, and described booster circuit provides reverse biased to described avalanche photodide (APD) makes institute
The avalanche photodide (APD) stated is in running order, it is characterised in that described avalanche photodide (APD) and
A current foldback circuit is additionally provided between booster circuit, described current foldback circuit is acted in described booster circuit
The Enable Pin of power supply chip, described current foldback circuit is enabled when the luminous power that the optical module is received meets a preset range
Described power supply chip, described booster circuit is provided to described avalanche photodide (APD) can be for the anti-of its work
Described power supply chip is closed to bias, and when the luminous power that the optical module is received is unsatisfactory for the preset range, is made described
Booster circuit, which stops providing to described avalanche photodide (APD), can supply the reverse biased of its work, until the optical module
The luminous power of reception meets the preset range again.
2. the optical module according to claim 1 with overcurrent protection function, it is characterised in that described overcurrent protection electricity
Road provides a threshold current for described optical module, when the luminous power that described optical module is received meets the preset range, flows into
The electric current of described avalanche photodide (APD) is less than the threshold current, is enabled by described current foldback circuit described
Power supply chip in booster circuit；When the luminous power that described optical module is received is unsatisfactory for the preset range, described snow is flowed into
The electric current of avalanche photo diode (APD) is more than the threshold current, and described booster circuit is closed by described current foldback circuit
In power supply chip.
3. the optical module according to claim 2 with overcurrent protection function, it is characterised in that described overcurrent protection electricity
Road includes being arranged at the pull-up resistor (R1) of described power supply chip Enable Pin, and the luminous power to be received in optical module meets pre-
If obtaining enable level (VCC) by the pull-up resistor (R1) during scope enables the power supply chip, described current foldback circuit
Also include one the 4th resistance (R4), PMOS and NMOS tube, wherein described avalanche photodide (APD) passes through the 4th electricity
Resistance (R4) is connected to described booster circuit, and the grid and source electrode of described PMOS are connected to the 4th described resistance (R4)
Two ends, the grid and source electrode of described NMOS tube are connected to the two ends of one second divider resistance (R3), second divider resistance
(R3) one end is grounded, and the other end is connected to the drain electrode of described PMOS by one first divider resistance (R2), the NMOS tube
Drain electrode is connected to the Enable Pin of described power supply chip.
4. the optical module according to claim 3 with overcurrent protection function, it is characterised in that the resistance of pull-up resistor (R1)
The enable level (VCC) that value meets its generation can enable the requirement of the power supply chip, make described power supply described in inflow
The electric current of avalanche photodide (APD) can enable described power supply chip when being less than described threshold current, and described
The grid source conducting voltage of PMOS and the grid source conducting voltage of NMOS tube match with described preset range.
5. the optical module according to claim 1 with overcurrent protection function, it is characterised in that described PMOS and
NMOS tube is the metal-oxide-semiconductor with the quick characteristic for opening shut-off, magnitude of the switching speed in few tens of nano-seconds.
6. the optical module according to claim 1 with overcurrent protection function, it is characterised in that described booster circuit is
One DC-DC booster circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404543.3A CN107231199B (en) | 2017-06-01 | 2017-06-01 | Optical module with overcurrent protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404543.3A CN107231199B (en) | 2017-06-01 | 2017-06-01 | Optical module with overcurrent protection function |
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| Publication Number | Publication Date |
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| CN107231199A true CN107231199A (en) | 2017-10-03 |
| CN107231199B CN107231199B (en) | 2019-08-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201710404543.3A Active CN107231199B (en) | 2017-06-01 | 2017-06-01 | Optical module with overcurrent protection function |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108896979A (en) * | 2018-07-13 | 2018-11-27 | 中山大学 | A kind of the pulse lidar reception circuit and system of ultra-wide injection measurement range |
| CN109217272A (en) * | 2018-11-07 | 2019-01-15 | 东莞铭普光磁股份有限公司 | A kind of APD optical module and its protection circuit and guard method |
| CN111431613A (en) * | 2020-03-20 | 2020-07-17 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN113315583A (en) * | 2021-07-29 | 2021-08-27 | 深圳市迅特通信技术股份有限公司 | Protection circuit of APD detector in optical module and optical module |
| CN115865185A (en) * | 2023-02-02 | 2023-03-28 | 中天通信技术有限公司 | Large light protection device, optical module and large light protection method |
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| CN108896979A (en) * | 2018-07-13 | 2018-11-27 | 中山大学 | A kind of the pulse lidar reception circuit and system of ultra-wide injection measurement range |
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| CN109217272A (en) * | 2018-11-07 | 2019-01-15 | 东莞铭普光磁股份有限公司 | A kind of APD optical module and its protection circuit and guard method |
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| CN113315583A (en) * | 2021-07-29 | 2021-08-27 | 深圳市迅特通信技术股份有限公司 | Protection circuit of APD detector in optical module and optical module |
| CN115865185A (en) * | 2023-02-02 | 2023-03-28 | 中天通信技术有限公司 | Large light protection device, optical module and large light protection method |
| CN115865185B (en) * | 2023-02-02 | 2023-12-22 | 中天通信技术有限公司 | Big light protection device, optical module and big light protection method |
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|---|---|
| CN107231199B (en) | 2019-08-06 |
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