CN2772031Y - 发光装置的封装结构 - Google Patents
发光装置的封装结构 Download PDFInfo
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- CN2772031Y CN2772031Y CNU2004201222330U CN200420122233U CN2772031Y CN 2772031 Y CN2772031 Y CN 2772031Y CN U2004201222330 U CNU2004201222330 U CN U2004201222330U CN 200420122233 U CN200420122233 U CN 200420122233U CN 2772031 Y CN2772031 Y CN 2772031Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
本实用新型是一种发光装置的封装结构,包括:一基材,其上设置二线路,且位于二该线路间设置有一绝缘层;数个发光源,设置于该基材上,每一该发光源上设置有正负极,用以产生光线;数个引线,其自该等发光源的正负极分别连接至二该线路,以形成电连接;以及数个反射层,其设置于基材上,且位于该等发光源间,以供发光源反射该光线。本实用新型具有小面积高密度的优点,并且可使得发光装置厚度减薄。
Description
技术领域
本实用新型涉及一种发光装置,特别是一种发光装置的封装结构。
背景技术
发光二极管(Light Emitting Diodes;LED)是一种冷光发光组件,由III-V族元素组成,如:磷化镓(GaP)、砷化镓(GaAs);发光二极管的发光原理是将电能转换成光,透过P型与N型半导体中电子与电洞相结合后,再以光的形式释放能量来产生光源,若以发光波长区分,可分为可见光与不可见光(红外线)LED两种,相较于传统灯泡发光的形式,LED具有省电、耐震、闪烁速度快的优点,因此为日常生活中不可或缺的重要组件。
可见光LED的应用范围包括交通号志、户外大型显示看板、通讯产品背光源、计算机及外围产品、指示灯、汽车仪表板及车灯、消费性电子产品、工业仪表设备等;不可见光LED则应用于光纤通讯、汽车防撞传感器、遥控器、红外线(IrDA)传输模块、自动控制、检测(如激光打印机的进纸检测装置)等。
图1所示为传统发光二极管的封装结构剖视图,发光二极管1包括有数个导线架10,并设置有数芯片12,在芯片12上利用引线14电连接到导线架10上,且利用透明外罩16包覆住,以使芯片12发出的光线经由两侧的反光区18反射后,而经由透明外罩16发射出而达到照明目的。
然而,上述的发光二极管1的封装结构中的导线架10及反光区18占据过多空间,使得单位面积增大,且在进行矩阵式排列时,芯片12密集度不高,因此无法达到小面积高亮度发光源。
发明内容
本实用新型的目的是提供一种发光装置的封装结构,整合现有技术中的导线架及反光区,以达到最小面积最大数量的发光源,以此在缩小封装面积的前提下,实现高密度发光源,进而提高亮度。
本实用新型的另一目的是提供一种发光装置的封装结构,利用涂布反射层代替先前技术的反光区,以使得发光装置的厚度减薄。
本实用新型的上述目的是这样实现的,一种发光装置的封装结构,其特征在于包括:
一基材,其上设置二线路,且位于二该线路间设置有一绝缘层;
数个发光源,设置于该基材上,每一该发光源上设置有正负极,用以产生光线;
数个引线,其自该等发光源的正负极分别连接至二该线路,以形成电连接;以及
数个反射层,其设置于基材上,且位于该等发光源间,以供发光源反射该光线。
下面结合附图对本实用新型进行详细说明。
附图说明
图1为传统发光二极管的封装结构剖视图;
图2为本实用新型的结构剖视图;
图3为本实用新型的俯视图;
图4为矩阵式发光源的设置示意图;
图5为本实用新型的另一实施例。
附图标记说明:1发光二极管;10导线架;12芯片;14引线;16透明外罩;18反光区;3发光装置;30基材;32线路;34绝缘层;36发光源;38引线;40反射层;42封装胶体。
具体实施方式
参见图2和图3,本实用新型的发光装置3包括一基材30,其由电路板、硅芯片或玻璃、非金属材质所构成,在基材30表面上设置有二线路32,并在基材30上设置有数个发光源36,如发光二极管,且发光源36可呈现如图4所示的矩阵式排列,或任何其它排列样式,如三个设置为一模块等皆可,以用以产生光线,其中在每一发光源36上有二个作为电极的焊垫,即正负极,因此二线路32分别供正负极连接,并且在二路线间设置有一绝缘层34,并利用数引线38自发光源36的正负极分别连接到二线路32上,以形成电连接,另有数反射层40设置在基材30上,而且反射层40位于发光源36间,以提供发光源36反射光线。
其中,反射层40的材质为金属与高分子混合物,或者可为可挠性材质所构成,金属为银、铝、锌或铬或者利用陶瓷材质构成,举凡任何可反射光线的材质皆可;且发光装置3也可包括数个保护层,利用来包覆引线38,以保护引线38,且反射层40利用涂布法设置在基材30上,且反射层40涂布的高度要大于发光源36的厚度。
其中,如图5所示,当发光装置3完成封装后,也可在基板30上,利用一封装胶体42,如环氧树脂覆盖所有组件。
本实用新型提出一种发光装置的封装结构,其将导线架及反光区整合,而利用反射层反射光线,以达到最小面积最大数量的发光源,进而达到高密度发光源的目的,并藉此提高亮度,并使发光装置的厚度减薄。
以上所述利用实施例说明本实用新型的特点,其目的是使本领域熟练技术人员能了解本实用新型的内容并据以实施,而非限定本实用新型的范围,因此凡其它未脱离本实用新型所揭示的精神而完成的等效修饰或修改,仍应包含在本实用新型的保护范围之内。
Claims (9)
1、一种发光装置的封装结构,其特征在于包括:
一基材,其上设置二线路,且位于二该线路间设置有一绝缘层;
数个发光源,设置于该基材上,每一该发光源上设置有正负极,用以产生光线;
数个引线,其自该等发光源的正负极分别连接至二该线路,以形成电连接;以及
数个反射层,其设置于基材上,且位于该等发光源间,以供发光源反射该光线。
2、如权利要求1所述的发光装置的封装结构,其特征在于,基材由电路板、硅芯片或玻璃、非金属材质所构成。
3、如权利要求1所述的发光装置的封装结构,其特征在于,发光源为发光二极管。
4、如权利要求1所述的发光装置的封装结构,其特征在于,反射层由金属与高分子混合物或可挠性材质构成。
5、如权利要求4所述的发光装置的封装结构,其特征在于,金属为银、铝、锌或铬。
6、如权利要求1所述的发光装置的封装结构,其特征在于,反射层由陶瓷材质构成。
7、如权利要求1所述的发光装置的封装结构,其特征在于,还包括数个保护层,用于包覆引线。
8、如权利要求1所述的发光装置的封装结构,其特征在于,反射层涂布于基材上。
9、如权利要求1所述的发光装置的封装结构,其特征在于,反射层的高度大于该等发光源的厚度。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376844A (zh) * | 2010-08-16 | 2012-03-14 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
CN102537780A (zh) * | 2010-12-07 | 2012-07-04 | Lg伊诺特有限公司 | 发光器件模块和包括发光器件模块的背光单元 |
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2004
- 2004-12-31 CN CNU2004201222330U patent/CN2772031Y/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376844A (zh) * | 2010-08-16 | 2012-03-14 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
CN102537780A (zh) * | 2010-12-07 | 2012-07-04 | Lg伊诺特有限公司 | 发光器件模块和包括发光器件模块的背光单元 |
CN102537780B (zh) * | 2010-12-07 | 2016-12-07 | Lg伊诺特有限公司 | 发光器件模块和包括发光器件模块的背光单元 |
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Granted publication date: 20060412 Termination date: 20101231 |