CN2755619Y - Parameter extracting system of packed reliability model - Google Patents
Parameter extracting system of packed reliability model Download PDFInfo
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- CN2755619Y CN2755619Y CN 200420083041 CN200420083041U CN2755619Y CN 2755619 Y CN2755619 Y CN 2755619Y CN 200420083041 CN200420083041 CN 200420083041 CN 200420083041 U CN200420083041 U CN 200420083041U CN 2755619 Y CN2755619 Y CN 2755619Y
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Abstract
The utility model relates to a parameter extracting system of a packed reliability model, which chiefly comprises a microcomputer and a testing system, wherein the microcomputer is used for acquiring and analyzing data, and the testing system comprises a power supply, an acquisition system, an input/output interface of current/voltage and a general power supply card switch. The system can test a plurality of samples simultaneously and can set testing paths, stress attributes, failure criterion, etc. of the samples; after the test, the system carries out data fitting and analysis on the sampling and failure condition of the samples by test software in the microcomputer in the windows interface to extract the reliability model parameter of the samples.
Description
Technical field
The utility model relates to a kind of model parameter extraction system, refers in particular to a kind of package level reliability model parameter extraction system.
Background technology
Along with the development of sub-micron and deep submicron process, dielectric breakdown, electromigration, Ohmic contact pore chain are degenerated and threshold voltage shift is VLSI (very large scale integrated circuit) (Very Large Scale Intcgration, VLSI) the distinctive failure mechanism of technology.If any VLSI production line lacks the evaluation to these several failure mechanisms, although can be by comprehensive aging and device screening test, reliability of device etc. is estimated and estimated, but comprehensively aging and filler test has caused waste on the one hand, on the other hand, behind the assembling complete machine, the failure rate height, the loss that causes thus also can be very big, and its reliability of products often still can not be guaranteed.Therefore need (Metal-oxidesemiconductor, MOS) dielectric breakdown of device, electromigration, Ohmic contact pore chain be degenerated and the reliability of threshold voltage shift is measured to the package level metal-oxide semiconductor (MOS) among the VLSI.
Commercial at present test of package level MOS device reliability model parameter and extraction system, the semiconductor parameter measurement instrument of the series such as HP4155A of producing as Agilent company is based on the equipment at DOS interface, though can do the reliability measurement of dielectric breakdown and threshold voltage, but graphical interfaces is unfriendly, and data processing function is very weak, is difficult to the reliability data after measuring is handled.The semiconductor parameter measurement instrument of the 4200-SCS series of the Kiethley company of U.S. production once at most can only be to 20 device stress applications in addition, data processing mainly is the life time that obtains device according to the degeneration of MOS device parameters, does not carry out the reliability model Parameter Extraction.
Therefore, provide a kind of package level reliability model parameter extraction system very necessary with the shortcoming that overcomes prior art.
Summary of the invention
The purpose of this utility model has been to provide dielectric breakdown, electromigration, the Ohmic contact pore chain of a kind of package level reliability model parameter extraction system to degenerate and the isoparametric system of threshold voltage shift, and fit out dielectric breakdown, electromigration and the Ohmic contact pore chain is degenerated and the statistical model form parameter and the life value of threshold voltage shift, be used to estimate the reliability level of the single failure mechanism of microelectronics production technology.
A kind of package level reliability model parameter extraction of the present utility model system mainly comprises microcomputer and test macro, data are gathered and analyzed in the Application of Microcomputer testing software, test macro comprises power supply, acquisition system, current/voltage IO interface and general supply card power switch, this test macro can be tested a plurality of samples simultaneously, and can be to the test channel of a plurality of samples, the attribute of stress, failure criterias etc. are provided with, fit analysis under the Windows interface, the sampling situation of sample and failure conditions being carried out data by microcomputer build-in test software after the end of test (EOT), extract the reliability model parameter of sample.
Compared with prior art, package level reliability model parameter extraction system measurement instrument of the present utility model can carry out the dielectric breakdown of package level MOS device specially, electromigration, the measurement of degeneration of Ohmic contact pore chain and threshold voltage shift, and system controlled by computer is carried out at the Windows interface with convenient close friend, can test a plurality of samples simultaneously, and to the test channel of a plurality of samples, the attribute of stress, failure criterias etc. are provided with, test procedure can automatic checkout system operate as normal whether, can carry out data to the measurement data of sample after the end of test (EOT) fits, extract the reliability model parameter of sample, easy to operate, the system data processing power is strong.
Description of drawings
Fig. 1 is the hardware on line figure of the utility model package level reliability model parameter extraction system.
Fig. 2 is the test system structure synoptic diagram of the utility model package level reliability model parameter extraction system.
Fig. 3 is the system principle process flow diagram of the utility model package level reliability model parameter extraction system.
Fig. 4 is the sample box structural drawing of the utility model package level reliability model parameter extraction system.
Fig. 5 is the working state figure of the utility model package level reliability model parameter extraction system.
Fig. 6 is the program-controlled voltage source schematic diagram of the utility model package level reliability model parameter extraction system.
Fig. 7 is the programmable current source schematic diagram of the utility model package level reliability model parameter extraction system.
Embodiment
The utility model provides a kind of package level reliability model parameter extraction system, be mainly used in electro-migration testing, the degradation testing of ohm pore chain, the dielectric breakdown test, PN junction leakage tests and threshold voltage shift test, this test macro can be tested a plurality of samples simultaneously, can automatic checkout system operate as normal whether, and can be to the test channel of a plurality of samples, the attribute of stress, failure criterias etc. are provided with, and can carry out data to the failure conditions of sample and fit after end of test (EOT), extract the reliability model parameter of sample.
Shown in seeing figures.1.and.2, this package level reliability model parameter extraction system 100 comprises microcomputer 10 and test macro 12, wherein microcomputer 10 is used for gathering and analyzing data, and test macro 12 comprises power supply 20, acquisition system 21, parameter testing options button 22, current/voltage IO interface 23 and general supply card power switch 24.Power supply 20 comprises program-controlled voltage source plate 200 and programmable current source 202, program-controlled voltage source 200 is used to provide dielectric breakdown and the required constant and ramp voltage of ohmic contact hole degeneration, and for each plate provides corresponding supply voltage, programmable current source 202 is used to provide electromigration, the required electric current of ohmic contact hole degeneration.
Parameter testing options button 22 is used to select the parameter of required detection of sample and extraction, can select to test electromigration, ohm pore chain, dielectric breakdown, PN junction electric leakage and threshold voltage shift etc. respectively.Current/voltage IO interface 23 is used to select the signal of I/O curtage, in the utility model, the voltage range of choice has ± 10V, ± 20V and ± 100V, corresponding electric current range of choice has ± 1A, ± 200mA.
Can be arranged in juxtaposition a plurality of sample 200a on the sample box 200 shown in Figure 4, sample box 200 1 ends are provided with voltage/current stress jack-plug socket 200b, and other end coaxial cable place is provided with acquisition channel socket 200c, is used to connect sample box 200 internal circuits.
In conjunction with referring to figs. 1 through shown in Figure 4, start general supply card power switch 24 during test earlier, press parameter testing options button 22 then, select the attribute of the parameter of required test and extraction, as electro-migration testing, the degradation testing of ohm pore chain, the dielectric breakdown test, PN junction leakage tests and threshold voltage shift test etc., behind the circuit turn-on, electric current is by current/voltage IO interface 23 outputs of test macro 12, voltage/current stress jack-plug socket 200b input by sample box 200, signal on the sample 200a is imported by acquisition channel socket 200c through the printed circuit board (PCB) of sample box 200 inside, then via current/voltage IO interface 23 input, by acquisition controlling plate 212 adopt into, carry out the signals sampling analysis then.
In conjunction with reference to Fig. 3 and shown in Figure 5; the current/voltage signal in the current/voltage source of test macro 12 is simultaneously via sample A and sample B; concerning each sample; two blocks of acquisition controlling plates, 212 control two paths of signals are arranged respectively; each sample there is two paths of signals control; one is to control sampling channel by 8255 plates, 210 signals on the AD plate; the signal that control is gathered is current, and whether this sample is sampled; another piece then is to control by opening into leaving plate 214 signals; be connected to protective relay; send signal during sample fails, finish the sampling of this sample, be used to control the guard signal after the sample fails.When sample is carried out loop test, only there is a sample to be sampled from arbitrary moment of microcosmic, by the signal controlling of 8255 plates 210.8255 plates 210 and opening into leaving the signal that plate 214 was handled, through amplifying the faint signal of attenuating plate 218 amplifications, the excessive signal of decaying is to guarantee 8255 plates 210 and to open into the acquisition precision of leaving plate 214.The signal that amplifies at last after attenuating plate 218 amplifies transfers to bus transmission dash receiver 216, and sends out bus signals, and test macro 12 and microcomputer 10 are communicated, and 10 testing softwares analyze parameter by microcomputer.
Below introduce principle and the method that adopts all kinds of parameters of package level reliability model parameter extraction system testing of the present utility model.
The metal interconnecting charge transfer test, the aluminum strip of IC device inside (lead) is after long-term the use, it is big that resistance can become, under normal working voltage, this process is wanted long time, and in accelerated test, adopt to strengthen the method for electric current, and quicken this degenerative process, failure criteria is decided to be resistance value and becomes 2 times of former resistance value.
The degeneration principle of Ohmic contact is identical with metal interconnecting charge transfer.
Dielectric breakdown test adds high direct voltage at the two ends of electric capacity (IC chip internal electric capacity), measures its leakage current and judge whether to lose efficacy, and electric current thinks that electric capacity lost efficacy during greater than 1uA.
PN junction and schottky junction degradation testing, under a certain current stress condition, the long-term reverse operation of PN junction can be degenerated, the failure criteria of degenerating is that back resistance reduces one times, method of testing is as follows: the reverse pressure drop of test PN junction under the 1mA electric current, thereby the PN junction back resistance, if voltage stress, then the criterion condition be the PN junction inverse current during greater than 10uA PN junction lost efficacy.
The threshold voltage shift test of MOS device, it is (adjustable to apply constant 0.1V voltage between leak in the source of MOS device, add negative to the P ditch, the N ditch is just added), add on grid-10V-+10V voltage, the voltage that is added on the tested MOS single tube grid progressively rises from 0V, and the monitoring source drains back to the road electric current simultaneously, when channel current met or exceeded 1uA, added grid voltage was promptly thought the threshold voltage of measured device.
This testing software is the interface with Windows, software is divided into collection, be provided with, a few block operations modules such as debugging, wherein acquisition module can be to electromigration, ohm pore chain is degenerated, dielectric breakdown, analysis is gathered and fitted to parameter values such as PN junction electric leakage and threshold voltage shift, can select to analyze according to the pulsation of curtage during analytical test, select pulsating current when electro-migration testing and the degradation testing of ohm pore chain, as steady current, the oblique wave electric current, stair step current and pulse current, dielectric breakdown, select pulsating volage when PN junction electric leakage and threshold voltage shift test, as constant voltage, ramp voltage, stepped voltage and pulse voltage.Module and debugging module are set can be provided with and debug at different test request power supply, passage and resistance, fits curve to reach best test.
When sampled data is analyzed, select test function by the instrument form, electromigration, ohm pore chain are degenerated, dielectric breakdown, PN junction electric leakage and threshold voltage shift etc.; Use the drawing form then and make time-voltage (or electric current) coordinate diagram that sample is carved into the constantly whole different passages of period that lost efficacy when beginning to test, fit out the dependability parameter test curve, quantitatively draw specimen at different temperature conditions, the parameter indexs such as electromigration lifetime value during different current/voltage value; Some voltage or current acquisition value constantly that can show required passage simultaneously by the tabulation form; The message form demonstrates test condition information, initial channel information, current channel information, breakdown channel information.
The utility model is an example with the electromigration reliability evaluation test, first group temperature is 200 ℃, electric current is 20mA, test data is listed in the table 1, and second group temperature is 185 ℃, and electric current is 25mA, test data is listed in the table 2, the 3rd group temperature is 170 ℃, and electric current is 30mA, and test data is listed in the table 3.
Table 1 electromigration lifetime value
| Measure number of times | 1 | 2 | 3 | 4 | 5 | 5 |
| Life-span (min) | 258 | 292 | 838 | 853 | 1281 | 1408 |
| Measure number of times | 7 | 8 | 9 | 10 | 11 | 12 |
| Life-span (min) | 1414 | 1514 | 1566 | 1629 | 1694 | 1352 |
Table 2 electromigration lifetime value
| Measure number of times | 1 | 2 | 3 | 4 | 5 | 6 |
| Life-span (min) | 685 | 864 | 1053 | 1278 | 1363 | 1941 |
| Measure number of times | 7 | 8 | 9 | 10 | 11 | 12 |
| Life-span (min) | 2096 | 2582 | 1373 | 2848 | 3443 | 3678 |
Table 3 electromigration lifetime value
| Measure number of times | 1 | 2 | 3 | 4 | 5 | 6 |
| Life-span (min) | 800 | 858 | 925 | 1702 | 2117 | 2151 |
| Measure number of times | 7 | 8 | 9 | 10 | 11 | 12 |
| Life-span (min) | 2525 | 2606 | 238 | 4609 | - | - |
Can obtain following measurement result to above-mentioned three groups of samples:
Table 4 electromigration measurement result
Model parameter by above-mentioned three groups of sample extraction is listed in the table 5.
Table 5 electromigration model parameter extraction
Draw after the electromigratory activation energy of MOS device metallization and the current density factor, just can obtain metallized electromigration reliability data, thereby know the metallized reliability level of processing line, guarantee to produce high-quality microelectronic component, reliability measurements such as dielectric breakdown, electromigration, the degeneration of Ohmic contact pore chain and threshold voltage shift by package level MOS device, the reliability level of monitoring microelectronic component critical process, the yield rate and the reliability of raising product.
Above disclosed only is the preferred embodiment of the utility model package level reliability model parameter extraction system, certainly can not limit the interest field of the utility model with this, therefore the equivalent variations of being done according to the utility model claim still belongs to the scope that the utility model is contained.
Claims (3)
1. package level reliability model parameter extraction system, it mainly comprises microcomputer and test macro, it is characterized in that: test macro comprises power supply, acquisition system, parameter testing options button, current/voltage IO interface and general supply card power switch, wherein, described acquisition system is an inefficacy acquisition control system, comprises the SC-11020 process control plate, the acquisition controlling plate that are plugged on side by side on the circuit board, opens into leaving plate and bus and send dash receiver.
2. a kind of package level reliability model parameter extraction according to claim 1 system, it is characterized in that: described power supply comprises program-controlled voltage source plate and programmable current source.
3. a kind of package level reliability model parameter extraction according to claim 2 system, it is characterized in that: described bus sends on the dash receiver and further is provided with the amplification attenuating plate.
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| CN 200420083041 CN2755619Y (en) | 2004-08-19 | 2004-08-19 | Parameter extracting system of packed reliability model |
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| CN 200420083041 CN2755619Y (en) | 2004-08-19 | 2004-08-19 | Parameter extracting system of packed reliability model |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102890182A (en) * | 2012-10-24 | 2013-01-23 | 北京元六鸿远电子技术有限公司 | Impact current testing method |
| CN103092864A (en) * | 2011-11-03 | 2013-05-08 | 无锡华润上华科技有限公司 | Method and system for generating test data report form |
| CN104142459A (en) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor detection circuit and method |
| CN104280675A (en) * | 2013-07-12 | 2015-01-14 | 上海宏测半导体科技有限公司 | Multi-SITE parallel test method |
| CN104750587A (en) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method and device for testing interactions of package structures |
| CN116298603A (en) * | 2023-02-02 | 2023-06-23 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromigration test parameter acquisition method, system, computer equipment and storage medium |
-
2004
- 2004-08-19 CN CN 200420083041 patent/CN2755619Y/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103092864A (en) * | 2011-11-03 | 2013-05-08 | 无锡华润上华科技有限公司 | Method and system for generating test data report form |
| CN102890182A (en) * | 2012-10-24 | 2013-01-23 | 北京元六鸿远电子技术有限公司 | Impact current testing method |
| CN102890182B (en) * | 2012-10-24 | 2015-02-25 | 北京元六鸿远电子技术有限公司 | Impact current testing method |
| CN104142459A (en) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor detection circuit and method |
| CN104280675A (en) * | 2013-07-12 | 2015-01-14 | 上海宏测半导体科技有限公司 | Multi-SITE parallel test method |
| CN104280675B (en) * | 2013-07-12 | 2017-02-08 | 上海宏测半导体科技有限公司 | Multi-SITE parallel test method |
| CN104750587A (en) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method and device for testing interactions of package structures |
| CN104750587B (en) * | 2013-12-31 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | The interactive method of testing and test device of encapsulating structure |
| CN116298603A (en) * | 2023-02-02 | 2023-06-23 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromigration test parameter acquisition method, system, computer equipment and storage medium |
| CN116298603B (en) * | 2023-02-02 | 2024-03-26 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromigration test parameter acquisition method, system, computer equipment and storage medium |
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Expiration termination date: 20140819 Granted publication date: 20060201 |