CN2731722Y - ZnO-base transparent thin film transistor - Google Patents
ZnO-base transparent thin film transistor Download PDFInfo
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- CN2731722Y CN2731722Y CNU2004200215999U CN200420021599U CN2731722Y CN 2731722 Y CN2731722 Y CN 2731722Y CN U2004200215999 U CNU2004200215999 U CN U2004200215999U CN 200420021599 U CN200420021599 U CN 200420021599U CN 2731722 Y CN2731722 Y CN 2731722Y
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- film transistor
- thin film
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Abstract
The utility model relates to a ZnO-base transparent thin film transistor. A layer of 50-150 nm thick n-ZnO thin film deposited on a glass substrate is served as the channel of the thin film transistor. An ATO thin film is served as the grid insulation layer, and a source, a gate and a drain all adopt an ITO thin film. Compared with traditional Si thin film transistor, the transparent thin film transistor can prevent the ascending of off-state current of the thin film transistor caused by the photoelectron leakage current generated between the source and the drain of the thin film transistor due to the incident light, and reduce the influence on operating status of the visual light with the luminous transmittance of over 80% in the visual light region. The thin film transistor has the advantages of simple preparation process and low cost, and is applied to the fields such as an active matrix display device etc.
Description
Technical field
The utility model relates to a kind of zno-based thin-film transistor transparent in the visible region
Background technology
In recent years, the research Showed Very Brisk of wide bandgap compound semiconductor ZnO, because ZnO has very high exciton bind energy (being 60mev under the room temperature), the exciton gain also can reach 300cm
-1, be a kind of desirable short-wave long light-emitting device material, in fields such as LEDs, LDs huge application potential is arranged.On the other hand, many intrinsic alms giver's defectives of ZnO (as zinc gap and oxygen room) can produce the height self compensation, therefore realize very difficulty of stable p-type doping, have restricted its rapid industrialization aspect luminescent device.Traditional thin-film transistor adopts amorphous silicon (α-Si TFT) usually, and this thin-film transistor research now is maximum, and technology is the most ripe, the production scale maximum.Employing multi-crystal TFT (P-Si TFT) is also arranged.But the Si material is because its opacity, is subjected to the influence of visible light photoproduction leakage current easily and the field of having limited its work.Between thin-film transistor source electrode and drain electrode, easily produce the photoelectron leakage current.
Summary of the invention
The purpose of this utility model provides a kind of at visible region clear films transistor.This thin-film transistor can prevent from can reduce the influence of visible light to its operating state because of incident light produces the photoelectron leakage current between the source electrode of thin-film transistor and drain electrode.
For achieving the above object, n type doping according to ZnO can realize controlled on a large scale, and there is the light transmittance up to 90% visible region of ZnO, because thin-film transistor is widely used in the active matrix liquid crystal display field, realize two kinds of conduction types when it does not need with a kind of semi-conducting material, therefore can consider ZnO is applied to LCD (AMLCD) field.The technical scheme that proposes this thin-film transistor is as follows: comprising undermost substrate, establish the raceway groove of thin-film transistor above the substrate, is gate insulation layer and photoetching source electrode, grid and drain electrode on raceway groove.Technical characterictic is that substrate adopts glass or sapphire, and raceway groove is the n-ZnO film, and this thin layer thickness is 50-150nm, and grid, source electrode, drain electrode are ito thin film, and gate insulation layer adopts the ATO film.
N type dopant in said n-ZnO is one or more among Al, Ga, the H etc.; The target that adopts in n-ZnO manufacturing process is Al
XZn
1-XOr Ga
XZn
1-X, wherein X is 0＜X＜0.4.
The advantage of this zno-based thin-film transistor has:
1) adopts transparent ZnO material as raceway groove, avoided in the Si thin-film transistor photoelectron leakage current the influence of its operating state.
2) adopt ZnO material and glass substrate can significantly reduce cost.
3) source electrode, grid and drain electrode are produced on the upside of ZnO channel layer, manufacture craft is simple relatively, is convenient to use.
Description of drawings
Fig. 1 is the structural representation of zno-based thin-film transistor.
Embodiment
With reference to accompanying drawing 1, the structure and the execution mode thereof of zno-based thin-film transistor of the present invention is described: deposition n-ZnO film 2 on substrate 1, carry out the photoetching first time then, be separated out little transistor unit, form the raceway groove of this thin-film transistor.Then carry out rapid thermal annealing (RTA) (600-800 ℃ of O
2Atmosphere) to improve channel resistance, improve the crystal property of ZnO.Be coated with one deck photoresist then on the surface uniformly, carve figure, deposit one deck ATO film 4 again, carve electrode window through ray with peeling off (lift-off) technology as gate insulation layer with lithography layout.Carry out rapid thermal annealing (RTA) (600-800 ℃ of O then
2Atmosphere), to improve the interface electrology characteristic of ATO/ZnO.Deposit the ito thin film transparency electrode again, make source electrode 3, grid 5, drain electrode 6 by lithography, this three upside that extremely all is positioned at ZnO film channel layer 2 with wet method.The rapid thermal annealing that carries out 300 ℃ again is to improve the light transmittance of ito thin film.
Claims (5)
1, a kind of thin-film transistor, comprise substrate, structure road, grid, source electrode, drain electrode and gate insulation layer, it is characterized in that substrate (1) adopts glass or sapphire, raceway groove (2) is the n-ZnO film, grid (5), source electrode (3), drain electrode (6) are ito thin film, and gate insulation layer (4) adopts the ATO film.
2, by the described thin-film transistor of claim 1, it is characterized in that n-ZnO film channel layer thickness is 50-150nm.
3,, it is characterized in that n type dopant among the described n-ZnO is one or more among Al, Ga, the H by the described thin-film transistor of claim 1.
4, by the described thin-film transistor of claim 3, it is characterized in that the target that adopts in the described n-ZnO manufacturing process is Al
xZn
1-xOr Ga
xZn
1-x, x wherein is 0＜x＜0.4.
5,, it is characterized in that source electrode (3), grid (5), drain electrode (6) are positioned at the upside of n-ZnO film channel layer by the described thin-film transistor of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200215999U CN2731722Y (en) | 2004-03-31 | 2004-03-31 | ZnO-base transparent thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200215999U CN2731722Y (en) | 2004-03-31 | 2004-03-31 | ZnO-base transparent thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2731722Y true CN2731722Y (en) | 2005-10-05 |
Family
ID=35052037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2004200215999U Expired - Fee Related CN2731722Y (en) | 2004-03-31 | 2004-03-31 | ZnO-base transparent thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2731722Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577256B (en) * | 2005-11-15 | 2011-07-27 | 株式会社半导体能源研究所 | Semiconductor device and method of manufacturing the same |
| CN107004717A (en) * | 2014-11-21 | 2017-08-01 | 株式会社半导体能源研究所 | Semiconductor device and storage device |
-
2004
- 2004-03-31 CN CNU2004200215999U patent/CN2731722Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577256B (en) * | 2005-11-15 | 2011-07-27 | 株式会社半导体能源研究所 | Semiconductor device and method of manufacturing the same |
| CN107004717A (en) * | 2014-11-21 | 2017-08-01 | 株式会社半导体能源研究所 | Semiconductor device and storage device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |