CN2694474Y - Longitudinal type thermal treatment facility - Google Patents
Longitudinal type thermal treatment facility Download PDFInfo
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- CN2694474Y CN2694474Y CNU032446241U CN03244624U CN2694474Y CN 2694474 Y CN2694474 Y CN 2694474Y CN U032446241 U CNU032446241 U CN U032446241U CN 03244624 U CN03244624 U CN 03244624U CN 2694474 Y CN2694474 Y CN 2694474Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model provides a longitudinal type thermal treatment facility (1), which can shorten the operation time of opening and closing the shading component of a longitudinal type thermal treatment facility and improve the capacity of treatment. The longitudinal type thermal treatment facility is provided with a shading component (17) to shade a loading opening (4) when a treated basal piece (W) is taken out from the loading opening (4) of a treatment chamber (5). The shading component (17) is provided with a loading opening cover (18) to selectively seal the loading opening (4) of the treatment chamber (5). The loading opening cover (18) is driven by a driving part, and the driving part is provided with a telescopic arm (19) for supporting and moving the driving part. The driving part causes the loading opening cover (18) to carry out linear motion between the sealing position (PB) of the sealing loading opening (4) and the stand-by position (PA) on the lateral direction of the sealing position (PB) through the telescopic arm (19).
Description
Technical field
The utility model relates to together heat-treats used longitudinal type annealing device to a plurality of processed substrates.Say that more specifically the utility model relates to a kind of longitudinal type annealing device, have improved covering (shutter) device in the load port of when process chamber takes out processed substrate, covering process chamber.
Moreover this longitudinal type annealing device is typically that the semiconductor processing system of packing into uses.At this, so-called semiconductor processes is meant, in order to produce the various processing that following works is implemented, Here it is by pattern formation semiconductor layer, insulating barrier and the conductive layer etc. to be scheduled on the processed substrate of semiconductor wafer and glass substrate etc., and produce the works that contains semiconductor device and the distribution that is connected semiconductor device, electrode etc. on this processed substrate.
Background technology
At the manufacture view of semiconductor device, people are in order to impose the processing of film deposition, oxidation, diffusion, change character, annealing and corrosion etc. to processed substrate such as semiconductor wafer, and adopt various processing unit.As this processing unit, the longitudinal type annealing device that can once heat-treat a plurality of wafers has been well-known.
Generally speaking, the longitudinal type annealing device has and is the used sealing longitudinal type process chamber (reaction tube) of harvesting wafer.Base portion at process chamber is formed with load port (load port), and opens selectively and seal by the lid that is come lifting by lift.In process chamber, adopt the maintenance utensil be referred to as wafer boat, so that keep wafer reserving mutually at interval and under the overlapping state.Wafer boat also is supported in it on lid in loaded with wafers, and utilizes lift to come loading in the process chamber and unloading by load port in this state.
Bottom at process chamber is provided with, when taking out the wafer boat be supported on the lid be from load port cover load port used cover device.It is in order to prevent that handling the very high hot gas of indoor temperature when the uncap spills from load port that device is covered in employing, so that to following generation thermal impact.
Figure 10 is this oblique view that covers relation between device and the process chamber (reaction tube) in the past of expression.As shown in figure 10, this covers device 110 and has the used loading flap 118 of load port 104 that covers process chamber 103.Load the front end that flap 118 is installed on horizontal rotating arm 116.Arm 116 partly goes up set horizontal rotation mechanism 114 by its basic point and reciprocating mechanism 112 can horizontally rotate and move up and down.
As representing with solid line among Figure 10, load the position of readiness that flap 118 can move to load port 104 side direction when opening load port.Move to the following of load port 104 and arm 116 is horizontally rotated about about 60 degree in order to load flap 118 during the sealing load port.Then, the arm 116 that further raises is so that load flap 118 and join with load port 104, and sealing load port 104.
Also have,, also will load the front end (not shown) that flap is installed on vertical turning arm sometimes as other examples of covering device.In this case, vertical turning arm vertically rotates by the vertical slew gear of its basic point part.Load the vertical rotation of flap by arm and be increased to load port and join, seal load port thus.
Adopt the device that covers shown in Figure 10 to make arm 116 horizontally rotate to move loading flap 118.Because it is bigger to load the weight ratio of flap 118, need spend the more time so adopt shown in Figure 10 covering to control its position when device carries out opening and closing operations to loading flap 118.For example, under the occasion of the longitudinal type annealing device that 12 inch wafers are used, the revolution of arm 116 is about 25 seconds when carrying out " locked in " operation, and the rising of arm 116 is about 2 seconds, and adding up to needs about about 27 seconds.Cover device and can become the reason that reduces disposal ability long operate time.Along with the size with wafer increases the path length of process chamber, the size of loading flap 118 can increase.Therefore, it is believed that handling aspect the used longitudinal type annealing device of future generation of wafer more the problems referred to above will be more obvious.
The utility model content
The purpose of this utility model is to shorten the opening and closing operations time of covering device in the longitudinal type annealing device, and improves its disposal ability.
According to the viewpoint in the utility model, can provide a plurality of processed substrates are together imposed the used longitudinal type annealing device of heat treatment, and this device possesses and has:
Receive and keep the sealing processing chamber of above-mentioned processed substrate, above-mentioned process chamber base portion have load port,
Selectively the lid that the above-mentioned load port of above-mentioned process chamber is opened and sealed,
In above-mentioned process chamber reserve mutually at interval and overlapping state under keep above-mentioned processed substrate the maintenance utensil,
To provide in the above-mentioned process chamber supply system of handling gas,
Discharge the gas in the above-mentioned process chamber gas extraction system,
The heater means that the inner air of above-mentioned process chamber is heated,
Under the above-mentioned maintenance utensil that will keep above-mentioned processed substrate is supported in state on the above-mentioned lid, make above-mentioned lid lifting lift,
When taking out above-mentioned processed substrate, the above-mentioned load port of above-mentioned process chamber covers the device that covers of above-mentioned load port,
And the above-mentioned device that covers, possessing has:
Selectively the loading flap that the above-mentioned load port of above-mentioned process chamber is sealed,
Have and above-mentioned loading flap is supported the drive division that makes it the telescopic arm that moves simultaneously, above-mentioned drive division make above-mentioned loading flap between the position of readiness of the detent position of the above-mentioned load port of sealing and above-mentioned detent position side direction, carry out straight line by above-mentioned telescopic arm to move.
In above-mentioned longitudinal type annealing device, above-mentioned telescopic arm possesses base portion and is supported in above-mentioned base portion and supports a plurality of arm members of above-mentioned loading flap, and above-mentioned arm member can possess and can carry out the 1st arm member of reciprocating action and the 2nd arm member that can carry out reciprocating action to above-mentioned the 1st arm member to above-mentioned base portion.
In above-mentioned longitudinal type annealing device, above-mentionedly cover the shell that device further possesses harvesting above-mentioned loading flap and above-mentioned telescopic arm, and above-mentioned telescopic arm is received and kept in the above-mentioned shell.
In above-mentioned longitudinal type annealing device, the above-mentioned device that covers further possesses the controller that the action of above-mentioned telescopic arm is controlled, and the reciprocating action that above-mentioned controller can make the 2nd arm member to above-mentioned the 1st arm member carry out is only carried out under above-mentioned the 1st arm member is in state in the above-mentioned shell.
In above-mentioned longitudinal type annealing device, above-mentioned shell possesses at formed the 1st opening on the 1st side of the above-mentioned shell relative with above-mentioned detent position and is being different from formed the 2nd opening on the 2nd side of above-mentioned shell of above-mentioned the 1st side, and above-mentioned longitudinal type annealing device can further possess such mechanism, and this mechanism can form the air-flow that flows into and flow out from above-mentioned the 2nd opening from above-mentioned the 1st opening.
Description of drawings
Fig. 1 is the structure chart of the related longitudinal type annealing device of simple expression execution mode of the present utility model.
Fig. 2 is the plane graph that simply is illustrated in the internal structure of using in the device shown in Figure 1 of covering device.
Fig. 3 is the front elevation of the simple expression internal structure of covering device shown in Figure 2.
Fig. 4 is the side view of the simple expression internal structure of covering device shown in Figure 2.
The A of Fig. 5, B are plane graph that covers device and the side views shown in the presentation graphs 2 under the state (harvesting state) that the 1st and the 2nd arm member shrinks simultaneously.
The C of Fig. 5, D are plane graph that covers device and the side views shown in the presentation graphs 2 under the state that has only the 2nd arm member to prolong.
The A of Fig. 6, B are plane graph that covers device and the side views shown in the presentation graphs 2 under the state (elongation state) that the 1st and the 2nd arm member prolongs simultaneously.
The C of Fig. 6, D are plane graph that covers device and the side views shown in the presentation graphs 2 under the state that has only the 1st arm member to shrink.
Fig. 7 is the oblique view of the air-exchanging structure in the operating area of simple presentation graphs 1 shown device.
Fig. 8 is the sectional view of the air-exchanging structure in the operating area of simple presentation graphs 1 shown device.
Fig. 9 is the related side views that cover device of simple expression other execution modes of the present utility model.
Figure 10 be in the expression longitudinal type annealing device in the past cover the oblique view that concerns between device and the process chamber.
Embodiment
Below, describe for execution mode of the present utility model with reference to accompanying drawing.Moreover, in the following description for the additional identical symbol of the constitutive requirements with roughly the same function and structure, and only under the occasion of necessity, just carry out repeat specification.
Fig. 1 is the structure chart of the related longitudinal type annealing device of simple expression execution mode of the present utility model.As shown in Figure 1, the skin of this longitudinal type annealing device 1 is formed by shell 2.Be provided with the processing such as the used longitudinal type heat-treatment furnace 3 of oxidation processes that a plurality of processed substrates such as semiconductor wafer W are imposed appointment above in shell 2.Heat-treatment furnace 3 includes its underpart opening as the process chamber of vertical length of load port 4, quartzy system reaction tube 5 for example.
The load port 4 of reaction tube (process chamber) 5 is opened selectively and is sealed by liftable lid 6.The formation of lid 6 can accomplish that the openend with load port 4 joins and load port 4 is sealed.Dispose on the lid 6 reserving at interval and overlapping state under keep the wafer boat of a plurality of wafer W (ボ-ト) 9.Be provided with in the bottom of lid 6 and rotate the used rotating mechanism 11a of wafer boat 9.
Around reaction tube 5, be provided with heater 7.Control heater 7 is to accomplish the air heat in the reaction tube (process chamber) 5 to for example 300～1200 ℃ of the temperature of appointment.For the inert gas that will handle gas and purge usefulness is sent in the reaction tube 5, comprise that a plurality of gases send into the gas supply system GS of pipe and on reaction tube 5, be connected with.On reaction tube 5, also be connected with the exhaust component ES that discharges the gas in the reaction tube 5.
When wafer W is handled in reaction tube 5, in level and reserving mutually at interval and under the overlapping state and remain on the wafer boat 9.It is the quartz system boat body 9a that 300mm, quantity wafer W many as about 25～150 keep as diameter greatly that wafer boat 9 has bore.Be connected as a single entity at the base portion of boat body 9a and boat body 9a and form leg part 9b.Leg part 9b is linked to and makes wafer W set on the lid 6 rotate the gyroaxis of used slew gear 11a by circumferencial direction.On lid 6, also be provided with heating arrangements or heat-preservation cylinder (not shown).
Be provided with reaction tube 5 and the heater 7 that constitutes heat-treatment furnace 3 in shell 2 internal causes, and horizontal arrangement there is the substrate 8 of example SUS system.On substrate 8, form and insert the required opening portion (not shown) of reaction tube 5 from bottom to top.Be formed with export-oriented bead part in the bottom of reaction tube 5, and this bead part remains on the substrate 8 by the bead keeper.Reaction tube 5 can take out downwards from substrate 8 for purpose such as cleaning.
In shell 2, be provided with below the heat-treatment furnace 3 and wafer boat 9 is carried out wafer W shift used operating area (load area) 10.Operating area 10 is provided with and makes lid 6 carry out the used elevating mechanism of lifting (lift) 11 (only expressing the arm of the lift 11 that lid 6 is supported in Fig. 1).Wafer boat 9 is being transported between operating area 10 and reaction tube 5 by lift 11 under the state that is supported on the lid 6.That is to say that wafer boat 9 loads and unloads by 11 pairs of reaction tubes 5 of lift.
Be provided with the used stowage receptacle 13 of carriage (carrier) (being also referred to as box) 12 of loading a plurality of harvesting wafer W in the front portion of shell 2.In each carriage 12, can receive and keep wafers a plurality of as about 25.Carriage 12 is to constitute as the closed type shipping container that has dismantled and assembled lid (not shown) in front.
Front portion in operating area 10 is provided with, and makes the front of carriage 12 and load port structure 13a that operating area 10 1 sides are joined in the time of loading bracket 12.On the dividing plate that operating area 10 and load port structure 13a is separated, be formed with opening portion, and open and close by gateway 14.Additional being provided with is the used mechanism of the lid of disassembly-assembly bracket 12 on gateway 14.In addition, 14 next door is provided with displacement means (not shown) in the gateway, replaces environmental gas in the load port structure 13a bracket 12 with inert gas.
Be provided with in the operating area 10 and between carriage 12 and wafer boat 9, carry out the transferring device 15 that wafer W shifts.The top of front, 10 outside, operating area is provided with for the used storage rack 16 of carriage of Cheng Shuan up and down of harvesting in advance, and for from stowage receptacle 13 to storage rack 16 or with its oppositely transport carriage used transport device (not shown).
Top in operating area 10 be provided with when the load port 4 of reaction tube 5 is taken out lids 6 be cover load port 4 used cover device 17.Cover device 17 and be used to prevent that the hot gas that temperature is very high in the reaction tube 5 from spilling consequently following generation thermal impact from load port 4.Therefore, cover device 17 and have the loading flap 18 that load port 4 is opened selectively and sealed.
Load the front end that flap 18 is supported in telescopic arm 19.The base portion of arm 19 is installed on the shell 2 by Framework construction 20.Load flap 18 and pass through the flexible of arm 19, between the position of readiness PA of the detent position PB that seals load port 4 and its side direction, carry out straight line and move.
On position of readiness PA, the drive division of all loading flaps 18, arm 19 and arm 19 (situation is recorded and narrated below in detail) is is all received and kept in the shell 21 that shell 2 is fixed.Shell is taken a breath by following manner in the 21 inherent operating areas 10.Fig. 7 and Fig. 8 are oblique view and the sectional view of simple expression to the air-exchanging structure of operating area 10 and shell 21.
Be formed with front openings 52 on the side relative with the detent position PB of shell 21, the size of this opening should reach load port lid 18 and arm (arm) 19 are come in and gone out.In addition, on other sides of shell 21, be formed with the opening 54 that is used to take a breath.Other parts of shell 21 do not seal, but in fact seal in order not produce air-flow yet.In addition, on the side (left side of Fig. 7 and Fig. 8) of the operating area, the outside 10 of shell 21, also be formed with the opening 56 that is used to take a breath.
Opening 54,56 is connected in scavenge duct 62, and this passage includes the pipeline that the side disposed 58 that installs 1 shell 2 along this.Scavenge duct 62 passes the base portion of shell 2, is connected with filter element 68 by heat exchanger 64 and fan (gas suction portion) 66.Filter element 68 is arranged on the side with the reverse shell 2 of pipeline 58 and accomplishes relative with operating area 10.
That is to say that the air-supply effect by being produced by fan 66 in operating area 10 provides clean air from filter element.This clean air forms air-flow FG in operating area 10 and shell 21, and from being formed at the pipeline 58 of opening 54, the 56 inflow exhaust sides on the opposite sides.Filter element 68 is got back in the air-supply effect of clean air after the use of flow ipe 58 by being produced by fan 66 once more, and is purified by filter element 68 and to recycle.
Particularly concerning shell 21, a part of clean air flows in the shell 21 from the front openings 52 of shell 21, and opening from the side 54 flows into the pipeline 58 of exhaust side.Like this, front openings 52 by shell 21 forms from the air-flow FG of the lateral flows inside of shell 21, thereby the dust (tiny particulate) that (particularly, the part of sliding contact between the arm member of telescopic arm 19) produces in shell 21 can not flow to operating area 10 1 sides.So, just can prevent since the dust that covering of adopting that following manner moves produces in the device 17 to the pollution of the wafer W handled in the operating area 10.
Fig. 2 to 4 is that plane graph, front elevation and the side view of the internal structure of device 17 are covered in simple expression.To shown in Figure 4, the Framework construction 20 that supports telescopic arm 19 has front carriage 20a and posterior bracket 20b as Fig. 2.About respectively have a pair of front carriage 20a to be fixed in the bottom of substrate 8.Posterior bracket 20b is fixed on the housing 2a of shell 2.
Advancing and retreating by the 1st and the 2nd cylinder 27,28 of the 1st and the 2nd arm member 24,26 drives.The the 1st and the 2nd cylinder 27,28 is made up of so-called no bar (ロ Star De レ ス) cylinder.On this Rodless cylinder, be inserted with slidably and have the piston of magnet in cylinder barrel 27a, the 28a.In addition, be inserted with slidably in the periphery of cylinder barrel 27a, 28a and with the 27b of annular drive portion, the 28b that have magnet of piston interlock.
The 1st cylinder 27 is installed on the base portion arm member 22, and its 27b of annular drive portion and the 1st arm member 24 are connected.The 2nd cylinder 28 is installed on the 1st arm member 24, and its 28b of annular drive portion and the 2nd arm member 26 are connected.The base plate 30 that constitutes shell 21 bottoms is installed below base portion arm member 22.Base plate 30 can tilt downwards with telescopic arm 19 selectively.
That is to say that telescopic arm 19 is that the center is supported and can rotate with the axle of basic point one side as shown in Figure 4.So, telescopic arm 19 can switch between following two states, and level set state that Here it is moves between detent position PB and position of readiness PA and operator enter the service mode PC that makes it downward-sloping.Say that more specifically the basic point of base portion arm member 22 is supported in the bottom of posterior bracket 20b by bolster 31 and can vertically rotates.On support 20a, link base plate 30 by the drawing piece of forming by connecting rod 32.Can utilize drawing piece 32 to keep the downward-sloping service mode PC of telescopic arm 19 by base plate 30.
In order to prevent that hot gas from emitting from load port 4, and aqueduct 35 is protected, the front end at aqueduct 34 is provided with top cover 36 for this reason.Be provided with in a side of the 1st arm member 24 and allow that the cross section that top cover 36 moves is the middle cover 37 of コ word shape.Provide the flexual pipe of having of pressed gas loosening and channeling conduct is provided with blank pipe 38 for this reason in order not make to the 2nd cylinder 28.
Carry out controlling the action of telescopic arm 19 by controller such as sequential control under the occasion of opening and closing operations to covering device 17.Controller control is to the reciprocating action of the 2nd arm member 26 of the 1st arm member 24, only carries out under the 1st arm member 24 is in state in the shell 21 to accomplish this reciprocating action.In view of the above, its structure dust (dust) that the slip because of arm 19 is produced can not flow in the operating area 10.
Specifically, make when loading flap 18 and moving (sealing is mobile) to detent position PB, at first shown in A, the B of Fig. 5, C, D, the 2nd arm member 26 is pushed ahead from position of readiness PA (shell 21 in), then shown in A, the B of Fig. 6, the 1st arm member 24 is pushed ahead.On the other hand, make when loading flap 18 and moving (open moving) to position of readiness PA (in the shell 21), at first shown in A, the B of Fig. 6, C, D, the 1st arm member 24 is return backward from detent position PB, then shown in A, the B of Fig. 5, the 2nd arm member 26 is return backward.
Because its slip was carried out in shell 21 when arm 19 stretched, so the dust that produces because of slip can emit by the air-flow in the shell 21.Therefore, can prevent that dust from flowing to operating area 10.
The 1st arm member 24 of arm 19 and the telescopic location (stroke is not held) of the 2nd arm member 26 also can be measured by number few transducer of trying one's best in the shell 21 that is difficult to be subjected to from the thermal impact of load port 4.Therefore, on base portion arm member 22, in the mode of specified configuration 3 transducers, for example limit switch 38a, 38b, 38c are installed along its longitudinal direction.
For these limit switches of switch 38a～38c successively, and base portion arm member 22 is provided with spinner 39 and it can slide by guide rail 40.Hook 39a, 39b are set on two positions before and after being divided into spinner 39.The the 1st and the 2nd arm member 24,26 is provided with to hanging on hook 39a, the 39b spinner 39 is operated used hook stick 41a, 41b, and this hook stick is outwards outstanding from each side.
For example, if make loading flap 18 move to detent position PB from position of readiness PA (in the shell 21) sealing, limit switch 38a～38c will carry out following action.At first, shown in A, the B of Fig. 5, the state after shrinking from arm 19 pushes ahead the 2nd arm member 26 to the 1st arm member 24.So, shown in C, the D of Fig. 5, the hook stick 41b of the 2nd arm member 26 just tangles the hook 39a of spinner 39 fronts and makes spinner 39 move to the position of middle limit switch 38b.Thereby limit switch 38b meeting conducting (on) is measured the 2nd arm member 26 and has been prolonged.
Secondly, base portion arm member 22 is advanced the 1st arm member 24.So, shown in A, the B of Fig. 6, the hook stick 41b of the 2nd arm member 26 just tangles the hook 39a of spinner 39 fronts and makes spinner 39 move to the position of anterior limit switch 38c.Thereby limit switch 38c meeting conducting is measured the 2nd arm member 26 and has been prolonged, that is to say that loading flap 18 arrives detent position PB.
On the other hand, if make loading flap 18 move to position of readiness PA (in the shell 21) from the detent position opening, limit switch 38a～38c will carry out following action.At first, shown in A, the B of Fig. 6, the state after prolonging from arm 19 returns the 1st arm member 24 to base portion arm member 22 backward.So, shown in C, the D of Fig. 6, the hook stick 41a of the 1st arm member 24 just tangles the hook 39b of spinner 39 back and makes spinner 39 move to the position of middle limit switch 38b.Thereby limit switch 38b meeting conducting is measured the 1st arm member 24 and has been prolonged.
Secondly, to the 1st arm member 24 the 2nd arm member 26 is return backward.So, shown in A, the B of Fig. 5, the hook stick 41b of the 2nd arm member 26 just tangles the hook 39b of spinner 39 back and makes spinner 39 move to the position of rear portion limit switch 38a.Thereby limit switch 38a meeting conducting is measured the 2nd arm member 26 and has been shunk, that is to say that loading flap 18 arrives position of readiness PA.
Below, the action of being made up of said structure of covering device 17 is described.Generally speaking, covering device 17 is not in and can hinders the state of sending into, send wafer boat 9 operations in the heat treated stove 3.That is to say that telescopic arm 19 shrinks for making loading flap 18 arrive position of readiness PA, and receives and keeps in shell 21 with loading flap 18.
During by the downward uncap 6 of lift (elevating mechanism) 11, that is to say after heat-treating when wafer boat 9 delivered to operating area 10, cover and to load flap 18 after device 17 prolongs arm 19 and move to detent position PB, and cover load port 4 with loading flap 18.Thus, can suppress the hot gas that temperature is high in preventing stove and be discharged into operating area 10 from load port 4.
Under the occasion of covering device 17 maintenance, remove the connection of screw, this screw for arm 19 is held in level forwardly support 20a go up fixed base plate 30 usefulness.Then, be that fulcrum makes to cover that device 17 turns round downwards and drop to by drawing piece 32 and makes it remain heeling condition with the bolster 31 of base portion.Under this occasion, arm 19 is shunk, but as shown in Figure 4, also can under this state that makes after arm 19 prolongs, it be tilted below tiltedly.
If make and cover device 17 and tilt to oblique below, will cover device 17 above be formed for the wide space of maintenance activity.Therefore, can easily cover device 17 maintenance activities, for example load the maintenance activity of flap 18 and arm 19.
The loading flap 18 that covers device 17 that the load port 4 of reaction tube 5 is carried out switch carries out straight line by telescopic arm 19 and moves between the position of readiness PA of detent position PB and side direction.Therefore, during driving the control that stops to be become is easy to, and can shorten covering the time of device 17 switching manipulations.That is to say, because heavier loading flap 18 is moved in straight-line mode, so compare with the occasion that the mode that makes heavier loading flap 18 with screw moves, can and in less space, move and load flap 18 with the short time (for example, in sealing action or breakdown action, needing about 10 seconds).Thus, can seek the raising and the saving spatialization of longitudinal type annealing device 1 disposal ability.
The structure of arm 19 can be accomplished from being that the horizontal adjusting state of fulcrum is turned back to the service mode PC that tilts downwards with the base portion.Therefore, the maintenance activity of flap 18 and arm 19 can be easily loaded, and the raising of operation can be sought.
Carry out under the occasion of opening and closing operations covering device 17, controller control is to the reciprocating action of the 2nd arm member 26 of the 1st arm member 24, only carries out under the 1st arm member 24 is in state in the shell 21 to accomplish this reciprocating action.That is to say, load flap 18 when position of readiness PA sealing moves to detent position PB making, the 2nd arm member 26 is pushed ahead, the 1st arm member 24 is pushed ahead.When making loading flap 18 move to position of readiness PA from detent position PB is open, the 1st arm member 24 is return backward, the 2nd arm member 26 is return backward.In view of the above, can accomplish that the dust that the slip because of arm 19 produces can not flow in the operating area 10.
In addition, the front openings 52 by shell 21 forms from the air-flow of the lateral flows inside of shell 21.Thereby dust can not flow to operating area 10 1 sides in shell 21.In view of the above, can prevent owing to cover in the device 17 the pollution of the dust that produces the wafer W handled in the operating area 10.
Fig. 9 is the related side views that cover device of simple expression other execution modes of the present utility model.This covers device 17X has to make at detent position PB and loads flap 18 and rise to engage used pressing mechanism 42 with load port 4.The structure of pressing mechanism 42 can make load flap 18 with whole telescopic arms 19 up and down direction move.Moreover in the present embodiment, telescopic arm 19 also makes and loads flap 18 straight lines and move and carry out opening and closing operations.
Like this, according to the device 17X that covers shown in Figure 9, can obtain and device 17 identical effect and the effect of covering shown in Figure 4.Further, according to covering device 17X,, thereby load port lid 18 is risen engage with load port 4 because be provided with the used pressing mechanism 42 of direction transfer arm up and down 19.Thereby, make it sealing by adopting loading flap 18 to block load port 4, and can prevent from fully the heat radiation from load port 4 from meanwhile also to make to become decompression state in the stove.
The related longitudinal type annealing device of above-mentioned execution mode is the example that the utility model is used, and the utility model can be used in the longitudinal type annealing device of other types too.In addition, in the above-described embodiment, adopt semiconductor wafer to explain, also can be applied to glass substrate, LCD substrate etc. but be not limited thereto the utility model as example as processed substrate.
Claims (13)
1. one kind together imposes the used longitudinal type annealing device of heat treatment to a plurality of processed substrates, and it possesses:
Receive and keep the sealing processing chamber of above-mentioned processed substrate, above-mentioned process chamber has load port in base portion;
The lid that the above-mentioned load port of above-mentioned process chamber is opened and sealed selectively;
In above-mentioned process chamber, reserving the maintenance utensil that keeps above-mentioned processed substrate under the also overlapping at interval state mutually;
To the supply system of handling gas is provided in the above-mentioned process chamber;
Discharge the gas extraction system of the gas in the above-mentioned process chamber;
The heater that the inner air of above-mentioned process chamber is heated;
Under the above-mentioned maintenance utensil that will keep above-mentioned processed substrate is supported in state on the above-mentioned lid, make above-mentioned lid carry out the lift of lifting;
When taking out above-mentioned processed substrate, the above-mentioned load port of above-mentioned process chamber covers the device that covers of above-mentioned load port;
And the above-mentioned device that covers possesses
The loading flap that the above-mentioned load port of above-mentioned process chamber is sealed selectively;
Have the drive division of the telescopic arm that makes it to move when above-mentioned loading flap supported;
Above-mentioned drive division makes above-mentioned loading flap carry out straight line between the position of readiness of detent position that seals above-mentioned load port and above-mentioned detent position side and moves by above-mentioned telescopic arm.
According in the claim 1 record the longitudinal type annealing device,
Above-mentioned telescopic arm possesses base portion and is supported in above-mentioned base portion and supports a plurality of arm members of above-mentioned loading flap, and above-mentioned a plurality of arm member possesses and can carry out the 1st arm member of reciprocating action and the 2nd arm member that can carry out reciprocating action with respect to above-mentioned the 1st arm member with respect to above-mentioned base portion.
According in the claim 2 record the longitudinal type annealing device,
Above-mentioned the 1st arm member possesses linear guider, and above-mentioned the 2nd arm member is in the enterprising line slip of above-mentioned linear guider of above-mentioned the 1st orbit arm.
According in the claim 3 record the longitudinal type annealing device,
Above-mentioned base portion possesses linear guider, and above-mentioned the 1st arm member is in the enterprising line slip of above-mentioned linear guider of above-mentioned base portion.
According in the claim 1 record the longitudinal type annealing device,
Above-mentioned telescopic arm is that the center can be supported rotatably with the axle of base end side, and can switch between set condition that moves between above-mentioned detent position and position of readiness and downward-sloping service mode.
According in the claim 1 record the longitudinal type annealing device,
The above-mentioned device that covers further possesses the pressing mechanism that makes above-mentioned loading flap and above-mentioned load port driving fit.
According in the claim 6 record the longitudinal type annealing device,
Above-mentioned pressing mechanism makes rising overally of above-mentioned telescopic arm.
According in the claim 1 record the longitudinal type annealing device,
The above-mentioned device that covers further possesses the refrigerant passage that is formed in the above-mentioned loading flap, and to the supply system of refrigerant is provided in the above-mentioned refrigerant passage.
According in the claim 2 record the longitudinal type annealing device,
The above-mentioned device that covers further possesses the shell of receiving and keeping above-mentioned loading flap and above-mentioned telescopic arm, and above-mentioned position of readiness is configured in the above-mentioned shell.
According in the claim 9 record the longitudinal type annealing device,
The above-mentioned device that covers further possesses the controller that the action of above-mentioned telescopic arm is controlled, and above-mentioned controller makes with respect to the reciprocating action of above-mentioned the 2nd arm member of above-mentioned the 1st arm member and only carries out under above-mentioned the 1st arm member is in state in the above-mentioned shell.
11. according to the longitudinal type annealing device of record in the claim 9,
The above-mentioned device that covers further possesses the controller that the action of above-mentioned telescopic arm is controlled, and above-mentioned controller make above-mentioned loading flap from above-mentioned position of readiness when above-mentioned detent position moves, above-mentioned the 2nd arm member is pushed ahead, above-mentioned the 1st arm member is pushed ahead, make above-mentioned loading flap from above-mentioned detent position when above-mentioned position of readiness moves, above-mentioned the 1st arm member is drawn back, above-mentioned the 2nd arm member is drawn back.
12. according to the longitudinal type annealing device of record in the claim 9,
Above-mentioned shell possesses at formed the 1st opening on above-mentioned shell the 1st side relative with above-mentioned detent position, and is being different from formed the 2nd opening on the 2nd side of above-mentioned shell of above-mentioned the 1st side, and said apparatus further possesses such mechanism, and this mechanism can form the air-flow that flows into and flow out from above-mentioned the 2nd opening from above-mentioned the 1st opening.
13. according to the longitudinal type annealing device of record in the claim 12,
Above-mentioned the 2nd opening is connected with gas suction portion by conduit.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP103316/2002 | 2002-04-05 | ||
| JP2002103316A JP4421806B2 (en) | 2002-04-05 | 2002-04-05 | Vertical heat treatment apparatus, shutter mechanism thereof, and operation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2694474Y true CN2694474Y (en) | 2005-04-20 |
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ID=28786297
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038077485A Expired - Fee Related CN100337311C (en) | 2002-04-05 | 2003-03-20 | Vertical heat treating equipment |
| CNU032446241U Expired - Fee Related CN2694474Y (en) | 2002-04-05 | 2003-04-04 | Longitudinal type thermal treatment facility |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038077485A Expired - Fee Related CN100337311C (en) | 2002-04-05 | 2003-03-20 | Vertical heat treating equipment |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4421806B2 (en) |
| KR (1) | KR100670869B1 (en) |
| CN (2) | CN100337311C (en) |
| TW (1) | TWI276178B (en) |
| WO (1) | WO2003085712A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356505C (en) * | 2003-12-26 | 2007-12-19 | 清华大学 | Fast semiconductor heat-treating facility with vertical heat treating chamber |
| KR100971755B1 (en) * | 2008-05-30 | 2010-07-22 | 주식회사 테라세미콘 | Furnace |
| JP5131094B2 (en) * | 2008-08-29 | 2013-01-30 | 東京エレクトロン株式会社 | Heat treatment apparatus, heat treatment method, and storage medium |
| JP5042950B2 (en) * | 2008-09-05 | 2012-10-03 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus and substrate support |
| JP5134495B2 (en) | 2008-10-16 | 2013-01-30 | 東京エレクトロン株式会社 | Processing apparatus and processing method |
| CN102889791B (en) * | 2012-09-27 | 2014-11-19 | 北京七星华创电子股份有限公司 | Furnace exhaust control device |
| JP6185863B2 (en) * | 2013-04-24 | 2017-08-23 | 日本碍子株式会社 | Heat treatment method and heat treatment apparatus |
| JP6258726B2 (en) * | 2014-03-04 | 2018-01-10 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
| WO2020059427A1 (en) * | 2018-09-19 | 2020-03-26 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing device, lid opening and closing mechanism, manufacturing method for semiconductor device, and fluid pressure drive system |
| CN114061316B (en) * | 2021-11-15 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Vertical heat treatment equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04157162A (en) * | 1990-10-22 | 1992-05-29 | Shinko Electric Co Ltd | Surface treating device |
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2003
- 2003-03-20 WO PCT/JP2003/003476 patent/WO2003085712A1/en active Application Filing
- 2003-03-20 CN CNB038077485A patent/CN100337311C/en not_active Expired - Fee Related
- 2003-03-20 KR KR1020047009948A patent/KR100670869B1/en active IP Right Grant
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| Publication number | Publication date |
|---|---|
| TW200400566A (en) | 2004-01-01 |
| JP2003297769A (en) | 2003-10-17 |
| JP4421806B2 (en) | 2010-02-24 |
| TWI276178B (en) | 2007-03-11 |
| KR100670869B1 (en) | 2007-01-19 |
| KR20040094400A (en) | 2004-11-09 |
| WO2003085712A1 (en) | 2003-10-16 |
| CN100337311C (en) | 2007-09-12 |
| CN1647253A (en) | 2005-07-27 |
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