WO2020059427A1 - Substrate processing device, lid opening and closing mechanism, manufacturing method for semiconductor device, and fluid pressure drive system - Google Patents

Substrate processing device, lid opening and closing mechanism, manufacturing method for semiconductor device, and fluid pressure drive system Download PDF

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Publication number
WO2020059427A1
WO2020059427A1 PCT/JP2019/033195 JP2019033195W WO2020059427A1 WO 2020059427 A1 WO2020059427 A1 WO 2020059427A1 JP 2019033195 W JP2019033195 W JP 2019033195W WO 2020059427 A1 WO2020059427 A1 WO 2020059427A1
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WIPO (PCT)
Prior art keywords
flow path
port
supply
cylinder
check valve
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PCT/JP2019/033195
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French (fr)
Japanese (ja)
Inventor
岳史 森
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株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
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Publication of WO2020059427A1 publication Critical patent/WO2020059427A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present disclosure relates to a substrate processing apparatus and a lid opening / closing mechanism for performing a heat treatment such as generation, oxidation, diffusion, CVD, and annealing of a thin film on a substrate such as a silicon wafer, a method for manufacturing a semiconductor device, and a fluid pressure driving system.
  • the vertical substrate processing apparatus includes a lid opening / closing mechanism (furnace port shutter) that can open and close the furnace port of the processing furnace.
  • a furnace port gate valve (corresponding to a lid opening / closing mechanism) is provided between a processing furnace and a load lock chamber to isolate the processing furnace from the load lock chamber.
  • the furnace port shutter driven by the conventional cylinder is held at the standby position when not in use. On the other hand, in use, the furnace port shutter is moved to the furnace port position, and the furnace port is closed with the furnace port shutter.
  • the furnace port shutter may not be able to be held at the standby position or the furnace port position. At this time, the furnace port shutter may come into contact with the substrate or the like, and the substrate or the like may be damaged.
  • the present disclosure provides a configuration in which the lid of the lid opening / closing mechanism can be held at the standby position or the furnace port position even when the working fluid is shut off.
  • One embodiment of the present disclosure is directed to a processing furnace for processing the substrate in a state in which a substrate holder holding a substrate is loaded, a lid covering a furnace port of the processing furnace, a first port and a second port.
  • a lid opening / closing mechanism including a cylinder for operating the lid, and an arm for connecting and fixing the lid and the cylinder, wherein the lid opening / closing mechanism is configured to connect the second port of the cylinder to an electromagnetic
  • a first flow rate adjuster and a first check valve provided, a second flow rate adjuster and a second check valve provided on the second supply / discharge flow path, and a branch from the first supply / discharge flow path;
  • a first pilot flow path connected to a pilot port of a second check valve, and the second supply / discharge flow path Configured to be driven by a hydraulic drive system and a second pilot flow path et branched and is connected to the pilot port of the first check valve is provided.
  • the pressure in the cylinder can be maintained, and the lid of the lid opening / closing mechanism can be held at the furnace port position or the standby position.
  • FIG. 1 is a perspective view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.
  • 1 is a side sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.
  • FIG. 3 is an enlarged cross-sectional view illustrating a main part of a furnace port shutter of the substrate processing apparatus according to the embodiment of the present disclosure.
  • 1 is a block diagram illustrating a control system in a substrate processing apparatus according to an embodiment of the present disclosure.
  • FIG. 2 is a configuration diagram illustrating a fluid circuit for driving a furnace port shutter of the substrate processing apparatus according to the embodiment of the present disclosure.
  • FIG. 1 and 2 show a vertical substrate processing apparatus as an example of the substrate processing apparatus.
  • a wafer 17 made of silicon or the like is shown as an example.
  • the substrate processing apparatus 1 includes a housing 2, and a front maintenance port 4 as an opening provided for maintenance is provided below the front wall 3 of the housing 2.
  • the front maintenance opening 4 is opened and closed by a front maintenance door 5.
  • a pod loading / unloading port 6 is provided on the front wall 3 of the housing 2 so as to communicate between the inside and the outside of the housing 2.
  • the pod loading / unloading port 6 is opened / closed by a front shutter (not shown), and a load port 7 is provided at the front front side of the pod loading / unloading port 6, and the load port 7 positions the mounted pod 8. It is configured to match.
  • the pod 8 is a sealed substrate container, which is carried in and out of the load port 7 by an in-process transfer device (not shown).
  • a pod shelf 9 is installed at a substantially central portion in the front-rear direction in the housing 2, and the pod shelf 9 is configured to store a plurality of pods 8 in a plurality of rows and a plurality of rows.
  • the pod shelf 9 is provided with a transfer shelf 12 in which a pod 8 to be transferred by a wafer transfer mechanism (hereinafter, also referred to as a transfer machine) 11 described later is stored.
  • a spare pod shelf 13 is provided above the load port 7 so as to store the pod 8 in a preliminary manner.
  • a pod transport device 14 is provided between the load port 7 and the pod shelf 9.
  • the pod transport device 14 includes a pod elevator 15 that can move up and down in the CZ axis direction while holding the pod 8, and a pod transport mechanism 16 that can move forward and backward and rotate in the CX axis direction and the CS axis direction.
  • the pod transport device 14 is configured to transport the pod 8 between the load port 7, the pod shelf 9, and the spare pod shelf 13 in cooperation with the pod elevator 15 and the pod transport mechanism 16.
  • a transfer machine 11 is provided behind the pod shelf 9.
  • the transfer machine 11 includes a wafer transfer device 18 that can rotate or move the wafer 17 in a horizontal direction and a wafer transfer device elevator 19 that moves the wafer transfer device 18 up and down.
  • the wafer transfer device 18 includes a required number (three in the drawing) of wafer mounting plates (substrate support portions) 21 on which the wafers 17 are mounted.
  • the transfer machine 11 is configured to load and unload the wafers 17 to and from the boat (substrate holder) 22.
  • a notch aligning device (not shown) as a substrate aligning device for aligning the circumferential position of the wafer 17 is provided.
  • a standby section 23 is provided in the rear area of the housing 2 to accommodate and stand by the boat 22, and a vertical processing furnace 24 is provided above the standby section 23.
  • the processing furnace 24 has a processing chamber 25 formed therein.
  • the lower end of the processing chamber 25 is an opening (furnace port), and the furnace port is opened and closed by a furnace port shutter (lid opening / closing mechanism) 26. It has become.
  • the furnace port shutter 26 includes a cover 27 that can open and close the furnace port of the processing furnace 24, an arm 29 to which the cover 27 is fixed by screws 28, and the like. It has a holding portion 31 that is held and fixed to the inner wall of the housing 2 and a cylinder 32 that operates the arm 29.
  • a fluid circuit (fluid pressure drive system) 33 described below is connected to the cylinder 32, and a working fluid such as compressed air can be supplied to and discharged from the cylinder 32 via the fluid circuit 33.
  • the fluid circuit 33 switches the port for supplying the working fluid, which is described later, so that the lid 27 is rotated integrally with the arm 29 around the holding portion 31 between the standby position and the furnace port position.
  • An opening / closing operation by the shutter 26 is performed.
  • the lid 27 is retracted to a position where it does not come into contact with other components such as the boat 22, and at the furnace port position, the lid 27 is configured to hermetically close the furnace port of the processing furnace 24.
  • a boat elevator 34 is installed in the standby section 23 as an elevating mechanism for elevating the boat 22 to the processing chamber 25.
  • a seal cap 36 as a lid is horizontally mounted on the arm 35 connected to the elevator of the boat elevator 34, so that the processing chamber 25 can be airtightly closed with the boat 22 loaded in the processing chamber 25. It has become.
  • the boat 22 is configured to hold a plurality of (for example, about 50 to 175) wafers 17 in multiple stages in a horizontal posture with their centers aligned.
  • a clean unit 38 is provided at a position facing the boat elevator 34.
  • the clean unit 38 includes a supply fan and a dustproof filter for supplying a clean atmosphere or clean air that is an inert gas.
  • the clean air blown out from the clean unit 38 is circulated through the transfer machine 11, the boat 22, and the like, and is then sucked into the duct 37 provided above the pod shelf 9, and the exhaust air is discharged to the outside of the housing 2. Or is blown into the housing 2 again by the clean unit 38.
  • the pod loading / unloading port 6 When the pod loading / unloading port 6 is opened by a front shutter (not shown), the pod 8 is loaded into the housing 2 through the pod loading / unloading port 6 and supplied onto the load port 7. When the pod 8 is supplied onto the load port 7, the pod loading / unloading port 6 is closed by the front shutter.
  • the pod 8 on the load port 7 is placed on the pod shelf 9 or the spare pod shelf 13 at a designated shelf position by the pod transport device 14.
  • the pod 8 is temporarily stored on the pod shelf 9 or the spare pod shelf 13 and then transferred to the transfer shelf 12 by the pod transport device 14 or transferred directly from the load port 7 to the transfer shelf 12. Is done.
  • the casing 2 is filled with clean air flowing therein.
  • the wafer 17 is taken out of the pod 8 by the transfer machine 11 and transferred to a notch aligning device (not shown). After aligning the position of the wafer 17 with the notch aligning device, the transfer machine 11 carries the wafer 17 into the standby unit 23 and loads (charges) it into the boat 22.
  • the furnace port shutter 26 is moved to the standby position, and the furnace port of the processing furnace 24 closed by the furnace port shutter 26 is opened. Subsequently, the boat 22 is lifted by the boat elevator 34 and loaded into the processing chamber 25 (loading).
  • the furnace port is hermetically closed by the seal cap 36, and a predetermined substrate processing is performed on the wafer 17.
  • the processing chamber 25 is evacuated to a desired pressure (degree of vacuum) by a gas exhaust mechanism (not shown). Further, the processing chamber 25 is heated to a predetermined temperature by a heating unit (heater) 39 so as to have a desired temperature distribution.
  • a processing gas controlled at a predetermined flow rate is supplied by a gas supply mechanism (not shown), and in the process of flowing the processing gas through the processing chamber 25, the processing gas comes into contact with the surface of the wafer 17 and a thin film is formed on the surface of the wafer 17. Is formed. Further, the processing gas after the reaction is exhausted from the processing chamber 25 by the gas exhaust mechanism.
  • an inert gas is supplied from an inert gas supply source (not shown) by a gas supply mechanism, and the atmosphere in the processing chamber 25 is replaced with the inert gas.
  • the pressure of 25 is returned to normal pressure.
  • the boat 22 is lowered by the boat elevator 34 via the seal cap 36. Further, the furnace port shutter 26 is moved to the furnace port position, and the furnace port of the processing furnace 24 is closed.
  • the wafer 17 and the pod 8 are discharged to the outside of the housing 2 in a procedure reverse to the above description.
  • the unprocessed wafers 17 are further loaded into the boat 22, and the batch processing of the wafers 17 is repeated.
  • a control device 41 for controlling the heater 39 for heating the processing furnace 24 to a predetermined temperature will be described with reference to FIG.
  • reference numeral 42 denotes a process control unit as a process system controller
  • 43 denotes a transfer control unit as a transfer system controller
  • 44 denotes a main control unit.
  • the process control unit 42 includes a storage unit 45, and the storage unit 45 stores a process execution program required to execute a process.
  • the transfer control unit 43 includes a storage unit 46.
  • the storage unit 46 includes a transfer program for executing a transfer process of the wafer 17, the pod transfer device 14, the transfer machine 11, the boat elevator 34, and the furnace port shutter 26. And an operation control program for controlling each of the operations.
  • the main control unit 44 includes a data storage unit 47, and the data storage unit 47 includes an external storage device such as an HDD. Note that the process execution program, the transport program, and the operation control program may be stored in the data storage unit 47.
  • FIG. 4 illustrates the sub-controllers 48, 49, and 50.
  • 48 is a first sub-controller for controlling the heating of the processing furnace 24
  • 49 is a second sub-controller for controlling the opening and closing of the valve, the operation of the flow controller 52 and the like, and controlling the supply flow rate of the processing gas to the processing furnace 24.
  • Reference numeral 50 denotes a third sub-controller that controls the exhaust of gas from the processing furnace 24, adjusts the opening of the pressure control valve 53, and controls the pressure in the processing furnace 24.
  • 54 is a temperature detector
  • 55 is a flow detector
  • 56 is a pressure sensor.
  • only one detector or sensor for detecting the state of each process actuator 39, 52, 53 is shown in the figure, a plurality of detectors or sensors may be provided.
  • the transport control unit 43 controls various transport control modules.
  • the various transport control modules control a first actuator, a second operation controller 58, a third operation controller 59, and a fourth operation, which control operation actuators described later. It comprises a control unit 60.
  • the first operation control unit 57 as a driver controls a servomotor (hereinafter, a first operation actuator) 62 which is a driving unit for driving the pod transport device 14.
  • the second operation control unit 58 as a driver controls a servomotor (hereinafter, a second operation actuator) 65 which is a driving unit for moving the transfer machine 11 forward and backward, moving up and down, and rotating.
  • the third operation control unit 59 as a driver controls a servomotor (hereinafter, a third operation actuator) 66 that is a driving unit that drives the boat elevator 34.
  • the fourth operation control unit 60 as a driver controls an electromagnetic switching valve (hereinafter, a fourth operation actuator) 67 which is a driving unit for driving the lid 27 of the furnace port shutter 26.
  • Each operation actuator is provided with a state detection sensor 68, 71, 72, 73 for detecting the state of each operation actuator (for example, a position state such as whether or not it is at a limit point).
  • Each of the state detection sensors 68, 71, 72, and 73 detects the state of each operation actuator, and outputs the detection results to the first operation control unit 57, the second operation control unit 58, the third operation control unit 59, and the fourth operation control unit.
  • Each section 60 has a function of feeding back the information.
  • Each of the operation control units 57, 58, 59, and 60 has a memory, and can temporarily store feedback data (detection result).
  • each state detection sensor 68, 71, 72, 73 is provided in each of the operation actuators 62, 65, 66, 67 in the figure, the present invention is not limited to this embodiment. Needless to say, a plurality of state detection sensors may be provided for each operation actuator.
  • the first operation control unit 57 controls the drive of the pod transport device 14 that transfers the pod 8 from the load port 7 to the transfer shelf 12 or the like.
  • the second operation control unit 58 takes out the wafer 17 from the pod 8 and drives and controls the transfer machine 11 to be loaded on the boat 22.
  • the third operation control unit 59 drives and controls the boat elevator 34 that carries the boat 22 loaded with the wafers 17 into the processing furnace 24.
  • the fourth operation control unit 60 drives and controls the furnace port shutter 26 that opens and closes the furnace port of the processing furnace 24.
  • the input device 75 indicates a keyboard, a mouse, an operation panel and the like
  • the monitor 76 is an operation screen including a setting screen and the like.
  • the operation unit 77 receives various instructions from the monitor 76 using the input device 75.
  • the monitor 76 is individually set for a transfer operation in which the transfer device 11 is directed to at least one of the pod 8 and the boat 22 and a transfer operation in which the transfer device 11 is separated from at least one of the pod 8 and the boat 22. It is configured to be.
  • the process controller 42 inputs a set value instruction or a command signal according to a processing sequence to the first sub-controller 48, the second sub-controller 49, and the third sub-controller 50.
  • the process control unit 42 controls the first sub-controller 48, the second sub-controller 49, and the third sub-controller 50 based on the detection results detected by the temperature detector 54, the flow rate detector 55, and the pressure sensor 56.
  • the process control unit 42 executes the substrate processing according to a command from the operation unit 77 via the main control unit 44.
  • the substrate processing is executed by the process control unit 42 independently of other control systems according to a program stored in the storage unit 45. Therefore, even if a problem occurs in the transport control unit 43 and the main control unit 44, the substrate processing is completed without interruption.
  • the first operation control unit 57 controls the first operation actuator 62 based on the detection result detected by the state detection sensor 68.
  • the second operation control unit 58 controls the second operation actuator 65 based on the detection result detected by the state detection sensor 71.
  • the third operation control section 59 controls the third operation actuator 66 based on the detection result detected by the state detection sensor 72.
  • the fourth operation control unit 60 controls each operation actuator corresponding to each state detection sensor, such as controlling the fourth operation actuator 67 based on the detection result detected by the state detection sensor 73. .
  • the transport control unit 43 executes a transport process according to an instruction from the operation unit 77.
  • the pod 8 and the wafer 17 are transferred independently of other control systems according to the transfer program and the operation control program stored in the storage unit 46 by the transfer control unit 43.
  • the data storage unit 47 stores a program for controlling the progress of the substrate processing, a setting program for setting processing contents and processing conditions, and a substrate processing in which setting conditions such as heating of the processing furnace 24 and supply and exhaust of the processing gas are stored.
  • Various programs such as a recipe, a communication program, an alarm information display program, and a parameter editing program are stored as files.
  • the communication program transmits and receives data to and from the process control unit 42 and the transport control unit 43 via communication means such as a LAN. Further, the alarm information display program displays, on the monitor 76, alarm information on the cause of an abnormality of the operation actuator 62, 65, 66, 67, for example, the cause of the stop, when an abnormality is detected by the state detection sensors 68, 71, 72, 73. To display.
  • the data storage means 47 has a data storage area. In the data storage area, parameters required for transporting the wafer 17 are stored, and further, setting information preset in the transport mechanism, detection results detected by the state detection sensors 68, 71, 72, 73, And information such as the processing state.
  • the transport control unit 43 causes the pod transport device 14 to move through the first operation control unit 57, the second operation control unit 58, the third operation control unit 59, and the fourth operation control unit 60.
  • the drive of the loading machine 11, each transport mechanism of the boat elevator 34, and the furnace port shutter 26 is controlled.
  • the furnace port shutter 26 moves the lid 27 to the standby position during substrate processing and when the boat 22 is loaded and unloaded, and opens the furnace port of the processing furnace 24. At other times, the lid 27 is moved to the furnace port position to close the furnace port.
  • the pressure in the cylinder 32 decreases and cannot be maintained at the standby position (or the furnace port position). 27 may stop. In this case, the boat 22 may come into contact with the lid 27, and the boat 22 may be damaged.
  • the lid 27 can be held at the standby position or the furnace port position.
  • the fluid circuit (fluid pressure drive system) 33 capable of holding the position of the lid 27 will be described with reference to FIG.
  • the fluid circuit 33 includes the cylinder 32 driven by the working fluid, the first supply / discharge flow path 82, and the second supply / discharge flow path 84.
  • One end of the first supply / discharge passage 82 is connected to a second air port 81 serving as a second port of the cylinder 32
  • the second supply / discharge passage 84 is connected to a first air port 83 serving as a first port of the cylinder 32.
  • a rotary actuator is used as the cylinder 32.
  • a first pilot check valve 85 as a first check valve and a first speed controller 86 as a first flow rate adjusting unit are provided on the first supply / discharge flow path 82 in order from the second port 81 side.
  • a first branch flow path 87 is connected between the cylinder 32 of the first supply / discharge flow path 82 and the first check valve 85, and a first pressure release valve 88 is provided in the first branch flow path 87. Have been. Further, an electromagnetic switching valve 67 is connected to the other end of the first supply / discharge flow path 82. When the substrate processing apparatus 1 is operating normally, the first pressure release valve 88 is closed.
  • a second pilot check valve 91 as a second check valve and a second speed controller 92 as a second flow rate adjuster are provided on the second supply / discharge flow path 84 in order from the first port 83 side.
  • a second branch passage 93 is connected between the cylinder 32 of the second supply / discharge passage 84 and the second check valve 91, and a second pressure release valve 94 is provided in the second branch passage 93. Have been. When the substrate processing apparatus 1 is operating normally, the second pressure release valve 94 is closed.
  • the first check valve 85 includes a first pilot port 85a and a check valve 85b.
  • the second check valve 91 includes a second pilot port 91a and a check valve 91b.
  • One end of a first pilot flow path 97 is connected between the first flow rate adjusting section 86 of the first supply / discharge flow path 82 and the electromagnetic switching valve 67, and the other end of the first pilot flow path 97 is connected to the second flow path. It is connected to the pilot port 91a.
  • One end of a second pilot flow path 98 is connected between the second flow rate adjusting unit 92 of the second supply / discharge flow path 84 and the electromagnetic switching valve 67, and the other end of the second pilot flow path 98 is It is connected to the first pilot port 85a.
  • a working fluid supply channel 99 is connected to the electromagnetic switching valve 67, and a working fluid supply source 101 is connected to the other end of the working fluid supply channel 99.
  • a working fluid is supplied from the working fluid supply source 101 to one of the first supply / discharge flow path 82 and the second supply / discharge flow path 84, and the first supply / discharge flow path 82
  • the working fluid can be discharged from one of the second supply / discharge passages 84.
  • the working fluid supplied from the working fluid supply source 101 passes through the first flow rate adjustment unit 86, passes through the first check valve 85, and is then supplied into the cylinder 32 from the second port 81. At this time, since the working fluid can also flow through the check valve 86b together with the throttle flow path 86a of the first flow rate adjusting unit 86, the working fluid is supplied into the cylinder 32 without restriction of the flow rate.
  • a part of the working fluid is introduced into the second pilot port 91a via the first pilot channel 97.
  • the check valve 91b loses its function due to the pilot pressure, and the working fluid can flow from the cylinder 32 toward the electromagnetic switching valve 67.
  • the working fluid introduced into the cylinder 32 is discharged from the first port 83, and discharged to the atmosphere via the second check valve 91, the second flow rate adjusting unit 92, and the electromagnetic switching valve 67.
  • the cylinder 32 operates, the lid 27 moves from, for example, the standby position to the furnace port position, and the furnace port is closed by the furnace port shutter 26.
  • the check valve 92b acts during the passage of the working fluid through the second flow rate adjusting section 92, so that the flow rate of the working fluid is restricted by the throttle flow path 92a. Therefore, the working fluid is not rapidly discharged to the atmosphere, and the lid 27 does not suddenly move from the standby position to the furnace port position.
  • a part of the working fluid is introduced into the first pilot port 85a via the second pilot flow path 98.
  • the check valve 85b loses its function due to the pilot pressure, and the working fluid can flow from the cylinder 32 toward the electromagnetic switching valve 67.
  • the working fluid introduced into the cylinder 32 is discharged from the second port 81, and is discharged to the atmosphere via the first check valve 85, the first flow rate adjusting unit 86, and the electromagnetic switching valve 67.
  • the cylinder 32 operates, the lid 27 moves from, for example, the furnace port position to the standby position, and the furnace port is opened. That is, the lid 27 is configured to move between the standby position and the furnace port position according to the direction of the working fluid supplied into the fluid circuit (fluid pressure drive system) 33.
  • the check valve 86b acts during the passage of the working fluid through the first flow rate adjusting unit 86, so that the flow rate of the working fluid is restricted by the throttle passage 86a. Therefore, the working fluid is not rapidly discharged to the atmosphere, and the lid 27 does not suddenly move from the furnace port position to the standby position.
  • the check valve 91b maintains its function and the working fluid is sealed in the cylinder 32, so that the working fluid in the cylinder 32 is not discharged to the atmosphere, and the pressure in the cylinder 32 is maintained. Therefore, the state of the furnace port shutter 26 is maintained, and the cover section 27 does not move, so that the cover section 27 is held at the furnace port position.
  • the check valve 85b maintains its function and the working fluid is sealed in the cylinder 32, so that the working fluid in the cylinder 32 is not discharged to the atmosphere, and the pressure in the cylinder 32 is maintained. Accordingly, the state of the furnace port shutter 26 is maintained, and the lid 27 does not move, so that the lid 27 is held at the standby position.
  • the furnace port shutter 26 it is necessary to manually operate the furnace port shutter 26, for example, when the working fluid from the working fluid supply source 101 is shut off or when the electromagnetic switching valve 67 breaks down.
  • the front maintenance door 5 is opened, and the first pressure release valve 88 or the second pressure release valve 94 is opened. Accordingly, the working fluid in the cylinder 32 is discharged, and the position of the lid 27 can be manually moved.
  • the first supply / discharge flow path 82 and the second supply / discharge flow path 84 A check valve 85 and a second check valve 91 are provided, and a first pilot passage 97 and a second supply / discharge passage 84 connecting the first supply / discharge passage 82 and the second pilot port 91a to the first pilot port 85a. And a second pilot flow path 98 that connects the second pilot flow path and the second pilot flow path.
  • the working fluid from the working fluid supply source 101 is shut off for some reason, the working fluid is not supplied to the first pilot port 85a and the second pilot port 91a, and the functions of the check valves 85b and 91b are reduced. Since the pressure is maintained, the working fluid in the cylinder 32 is not discharged, and the pressure in the cylinder 32 is maintained.
  • the lid section 27 moves rapidly. Therefore, it is possible to prevent the connection portion between the arm 29 and the holding portion 31 from being damaged.
  • the first pressure release valve 88 and the second pressure release valve 94 are provided and the working fluid in the cylinder 32 can be manually discharged, the position of the lid portion 27 held at the standby position or the furnace port position is provided. Can be changed manually.
  • a rotary actuator is used as the cylinder 32, but any other cylinder may be used as long as it is a compressed fluid driven cylinder.
  • the present disclosure can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus.
  • the type of the thin film formed on the substrate is not particularly limited.
  • the present invention can be applied to a process for forming various types of thin films such as a nitride film (eg, SiN), an oxide film (eg, SiO), and a metal oxide film.

Abstract

The present invention comprises a lid part (27) that covers a furnace opening of a processing furnace (24), and a lid opening and closing mechanism (26). The lid opening and closing mechanism (26) comprises: a cylinder (32) that comprises a first port (83) and a second port (81), and actuates the lid part; and an arm (29) that couples and secures the lid part and the cylinder. The lid opening and closing mechanism is configured so as to be driven by a fluid pressure drive system (33) comprising: a first supply/exhaust flow path (82) that interconnects the second port (81) of the cylinder and an electromagnetic switching valve (67); a second supply/exhaust flow path (84) that interconnects the first port (83) of the cylinder and the electromagnetic switching valve; a first flow speed adjustment unit (86) and a first check valve (85) provided on the first supply/exhaust flow path; a second flow speed adjustment unit (92) and a second check valve (91) provided on the second supply/exhaust flow path; a first pilot flow path (97) branching from the first supply/exhaust flow path and connected to a pilot port (91a) of the second check valve; and a second pilot flow path (98) branching from the second supply/exhaust flow path and connected to a pilot port (85a) of the first check valve.

Description

基板処理装置及び蓋開閉機構及び半導体装置の製造方法及び流体圧駆動システムSubstrate processing apparatus, lid opening / closing mechanism, semiconductor device manufacturing method, and fluid pressure drive system
　本開示は、シリコンウェーハ等の基板に薄膜の生成、酸化、拡散、ＣＶＤ、アニール等の熱処理を行う基板処理装置及び蓋開閉機構及び半導体装置の製造方法及び流体圧駆動システムに関するものである。 The present disclosure relates to a substrate processing apparatus and a lid opening / closing mechanism for performing a heat treatment such as generation, oxidation, diffusion, CVD, and annealing of a thin film on a substrate such as a silicon wafer, a method for manufacturing a semiconductor device, and a fluid pressure driving system.
　半導体装置の製造工程に於ける基板処理を行う基板処理装置として、縦型基板処理装置がある。縦型基板処理装置は、処理炉の炉口を開閉可能な蓋開閉機構（炉口シャッタ）を具備している。例えば、特許文献１によれば、処理炉とロードロック室の間に炉口ゲートバルブ（蓋開閉機構に相当）を設け、処理炉とロードロック室を隔離する。 縦 As a substrate processing apparatus for performing substrate processing in a semiconductor device manufacturing process, there is a vertical substrate processing apparatus. The vertical substrate processing apparatus includes a lid opening / closing mechanism (furnace port shutter) that can open and close the furnace port of the processing furnace. For example, according to Patent Literature 1, a furnace port gate valve (corresponding to a lid opening / closing mechanism) is provided between a processing furnace and a load lock chamber to isolate the processing furnace from the load lock chamber.
　従来のシリンダにより駆動される炉口シャッタは、不使用時には待機位置で保持される。一方、使用時には炉口シャッタを炉口位置へ移動させ、炉口シャッタで炉口を閉塞する。 炉 The furnace port shutter driven by the conventional cylinder is held at the standby position when not in use. On the other hand, in use, the furnace port shutter is moved to the furnace port position, and the furnace port is closed with the furnace port shutter.
　然し乍ら、従来の炉口シャッタの場合、シリンダに対して何らかの理由で圧縮空気等の作動流体が遮断されると、炉口シャッタを待機位置或は炉口位置に保持できないことがある。このとき、炉口シャッタが基板等と接触し、基板等が破損する場合がある。 However, in the case of the conventional furnace port shutter, if the working fluid such as the compressed air is shut off for some reason from the cylinder, the furnace port shutter may not be able to be held at the standby position or the furnace port position. At this time, the furnace port shutter may come into contact with the substrate or the like, and the substrate or the like may be damaged.
特開２００６−１００３５４号公報JP 2006-100354 A
　本開示は、作動流体が遮断された場合であっても、蓋開閉機構の蓋部を待機位置又は炉口位置に保持可能な構成を提供するものである。 The present disclosure provides a configuration in which the lid of the lid opening / closing mechanism can be held at the standby position or the furnace port position even when the working fluid is shut off.
　本開示の一態様は、基板を保持した基板保持具を装入した状態で、前記基板を処理する処理炉と、該処理炉の炉口を覆う蓋部と、第１ポートと第２ポートとを備え、該蓋部を動作させるシリンダと、前記蓋部と前記シリンダとを連結固定するアームとを備えた蓋開閉機構とを備え、前記蓋開閉機構は、前記シリンダの前記第２ポートと電磁切換弁との間を接続する第１給排流路と、前記シリンダの前記第１ポートと前記電磁切換弁との間を接続する第２給排流路と、前記第１給排流路上に設けられた第１流速調整部及び第１チェック弁と、前記第２給排流路上に設けられた第２流速調整部及び第２チェック弁と、前記第１給排流路から分岐して前記第２チェック弁のパイロットポートに接続される第１パイロット流路と、前記第２給排流路から分岐して前記第１チェック弁のパイロットポートに接続される第２パイロット流路とを具備する流体圧駆動システムにより駆動される構成が提供される。 One embodiment of the present disclosure is directed to a processing furnace for processing the substrate in a state in which a substrate holder holding a substrate is loaded, a lid covering a furnace port of the processing furnace, a first port and a second port. A lid opening / closing mechanism including a cylinder for operating the lid, and an arm for connecting and fixing the lid and the cylinder, wherein the lid opening / closing mechanism is configured to connect the second port of the cylinder to an electromagnetic A first supply / discharge passage connecting between the switching valve, a second supply / discharge passage connecting between the first port of the cylinder and the electromagnetic switching valve, and a first supply / discharge passage on the first supply / discharge passage. A first flow rate adjuster and a first check valve provided, a second flow rate adjuster and a second check valve provided on the second supply / discharge flow path, and a branch from the first supply / discharge flow path; A first pilot flow path connected to a pilot port of a second check valve, and the second supply / discharge flow path Configured to be driven by a hydraulic drive system and a second pilot flow path et branched and is connected to the pilot port of the first check valve is provided.
　本開示によれば、作動流体の供給が遮断された場合であっても、シリンダ内の圧力を維持することができ、蓋開閉機構の蓋部を炉口位置又は待機位置に保持することができる。 According to the present disclosure, even when the supply of the working fluid is cut off, the pressure in the cylinder can be maintained, and the lid of the lid opening / closing mechanism can be held at the furnace port position or the standby position. .
本開示の実施例に係る基板処理装置を示す斜視図である。1 is a perspective view illustrating a substrate processing apparatus according to an embodiment of the present disclosure. 本開示の実施例に係る基板処理装置を示す側断面図である。1 is a side sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure. 本開示の実施例に係る基板処理装置の炉口シャッタを示す要部拡大断面図である。FIG. 3 is an enlarged cross-sectional view illustrating a main part of a furnace port shutter of the substrate processing apparatus according to the embodiment of the present disclosure. 本開示の実施例に係る基板処理装置に於ける制御系を示すブロック図である。1 is a block diagram illustrating a control system in a substrate processing apparatus according to an embodiment of the present disclosure. 本開示の実施例に係る基板処理装置の炉口シャッタを駆動させる為の流体回路を示す構成図である。FIG. 2 is a configuration diagram illustrating a fluid circuit for driving a furnace port shutter of the substrate processing apparatus according to the embodiment of the present disclosure.
　以下、図面を参照しつつ本開示の実施例を説明する。図１、図２は、基板処理装置の一例として縦型の基板処理装置を示している。尚、該基板処理装置に於いて処理される基板は、一例としてシリコン等からなるウェーハ１７が示されている。 Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. 1 and 2 show a vertical substrate processing apparatus as an example of the substrate processing apparatus. As a substrate to be processed in the substrate processing apparatus, a wafer 17 made of silicon or the like is shown as an example.
　基板処理装置１は筐体２を備え、該筐体２の正面壁３の下部にはメンテナンス可能な様に設けられた開口部としての正面メンテナンス口４が介設されている。該正面メンテナンス口４は正面メンテナンス扉５によって開閉される。 The substrate processing apparatus 1 includes a housing 2, and a front maintenance port 4 as an opening provided for maintenance is provided below the front wall 3 of the housing 2. The front maintenance opening 4 is opened and closed by a front maintenance door 5.
　筐体２の正面壁３にはポッド搬入搬出口６が筐体２の内外を連通する様に開設されている。ポッド搬入搬出口６はフロントシャッタ（図示せず）によって開閉され、ポッド搬入搬出口６の正面前方側にはロードポート７が設置されており、該ロードポート７は載置されたポッド８を位置合せする様に構成されている。 に は A pod loading / unloading port 6 is provided on the front wall 3 of the housing 2 so as to communicate between the inside and the outside of the housing 2. The pod loading / unloading port 6 is opened / closed by a front shutter (not shown), and a load port 7 is provided at the front front side of the pod loading / unloading port 6, and the load port 7 positions the mounted pod 8. It is configured to match.
　該ポッド８は密閉式の基板収容器であり、図示しない工程内搬送装置によってロードポート７上に搬入され、又、該ロードポート７上から搬出される様になっている。 The pod 8 is a sealed substrate container, which is carried in and out of the load port 7 by an in-process transfer device (not shown).
　筐体２内の前後方向の略中央部には、ポッド棚９が設置されており、該ポッド棚９は複数段複数列にて複数個のポッド８を保管する様に構成されている。ポッド棚９には、後述するウェーハ搬送機構（以後、移載機ともいう）１１の搬送対象となるポッド８が収納される移載棚１２が設けられている。又、ロードポート７の上方には予備ポッド棚１３が設けられ、予備的にポッド８を保管する様に構成されている。 ポ A pod shelf 9 is installed at a substantially central portion in the front-rear direction in the housing 2, and the pod shelf 9 is configured to store a plurality of pods 8 in a plurality of rows and a plurality of rows. The pod shelf 9 is provided with a transfer shelf 12 in which a pod 8 to be transferred by a wafer transfer mechanism (hereinafter, also referred to as a transfer machine) 11 described later is stored. A spare pod shelf 13 is provided above the load port 7 so as to store the pod 8 in a preliminary manner.
　ロードポート７とポッド棚９との間には、ポッド搬送装置１４が設置されている。ポッド搬送装置１４は、ポッド８を保持したままＣＺ軸方向に昇降可能なポッドエレベータ１５と、ＣＸ軸方向とＣＳ軸方向の進退及び回転が可能なポッド搬送機構１６とで構成されている。ポッド搬送装置１４は、ポッドエレベータ１５とポッド搬送機構１６との協働により、ロードポート７、ポッド棚９、予備ポッド棚１３との間でポッド８を搬送する様に構成されている。 ポ A pod transport device 14 is provided between the load port 7 and the pod shelf 9. The pod transport device 14 includes a pod elevator 15 that can move up and down in the CZ axis direction while holding the pod 8, and a pod transport mechanism 16 that can move forward and backward and rotate in the CX axis direction and the CS axis direction. The pod transport device 14 is configured to transport the pod 8 between the load port 7, the pod shelf 9, and the spare pod shelf 13 in cooperation with the pod elevator 15 and the pod transport mechanism 16.
　ポッド棚９の後方には、移載機１１が設置されている。該移載機１１は、ウェーハ１７を水平方向に回転乃至直動可能なウェーハ搬送装置１８、及びウェーハ搬送装置１８を昇降させる為のウェーハ搬送装置エレベータ１９とで構成されている。 A transfer machine 11 is provided behind the pod shelf 9. The transfer machine 11 includes a wafer transfer device 18 that can rotate or move the wafer 17 in a horizontal direction and a wafer transfer device elevator 19 that moves the wafer transfer device 18 up and down.
　ウェーハ搬送装置１８は、ウェーハ１７を載置する所要枚数（図示では３枚）のウェーハ載置プレート（基板支持部）２１を具備している。ウェーハ搬送装置１８とウェーハ搬送装置エレベータ１９との協働により、移載機１１はボート（基板保持具）２２に対してウェーハ１７を装填及び払出しする様に構成されている。尚、移載機１１の近傍には、ウェーハ１７の円周方向の位置を整合させる基板整合装置としてのノッチ合せ装置（図示せず）が設置されている。 The wafer transfer device 18 includes a required number (three in the drawing) of wafer mounting plates (substrate support portions) 21 on which the wafers 17 are mounted. By the cooperation of the wafer transfer device 18 and the wafer transfer device elevator 19, the transfer machine 11 is configured to load and unload the wafers 17 to and from the boat (substrate holder) 22. In the vicinity of the transfer machine 11, a notch aligning device (not shown) as a substrate aligning device for aligning the circumferential position of the wafer 17 is provided.
　筐体２の後側領域には、ボート２２を収容して待機させる待機部２３が構成され、待機部２３の上方には縦型の処理炉２４が設けられている。処理炉２４は内部に処理室２５を形成し、処理室２５の下端部は開口（炉口部）となっており、該炉口部は炉口シャッタ（蓋開閉機構）２６により開閉される様になっている。 待機 A standby section 23 is provided in the rear area of the housing 2 to accommodate and stand by the boat 22, and a vertical processing furnace 24 is provided above the standby section 23. The processing furnace 24 has a processing chamber 25 formed therein. The lower end of the processing chamber 25 is an opening (furnace port), and the furnace port is opened and closed by a furnace port shutter (lid opening / closing mechanism) 26. It has become.
　図３に示される様に、炉口シャッタ２６は、処理炉２４の炉口部を開閉可能な蓋部２７と、該蓋部２７が螺子２８等により固着されたアーム２９と、アーム２９を回転可能に保持し筐体２の内壁に固定された保持部３１と、アーム２９を動作させるシリンダ３２とを具備している。該シリンダ３２には後述する流体回路（流体圧駆動システム）３３が接続され、該流体回路３３を介してシリンダ３２に圧縮空気等の作動流体を給排可能となっている。流体回路３３は、作動流体を供給する後述するポートを切替えることで、待機位置と炉口位置との間で保持部３１を中心に、蓋部２７をアーム２９と一体に回転駆動させ、炉口シャッタ２６による開閉動作を行う。待機位置で蓋部２７は、ボート２２等の他の部品と接触しない位置に退避し、炉口位置で蓋部２７は、処理炉２４の炉口部を気密に閉塞する様構成されている。 As shown in FIG. 3, the furnace port shutter 26 includes a cover 27 that can open and close the furnace port of the processing furnace 24, an arm 29 to which the cover 27 is fixed by screws 28, and the like. It has a holding portion 31 that is held and fixed to the inner wall of the housing 2 and a cylinder 32 that operates the arm 29. A fluid circuit (fluid pressure drive system) 33 described below is connected to the cylinder 32, and a working fluid such as compressed air can be supplied to and discharged from the cylinder 32 via the fluid circuit 33. The fluid circuit 33 switches the port for supplying the working fluid, which is described later, so that the lid 27 is rotated integrally with the arm 29 around the holding portion 31 between the standby position and the furnace port position. An opening / closing operation by the shutter 26 is performed. At the standby position, the lid 27 is retracted to a position where it does not come into contact with other components such as the boat 22, and at the furnace port position, the lid 27 is configured to hermetically close the furnace port of the processing furnace 24.
　待機部２３には、ボート２２を処理室２５に昇降させる昇降機構としてのボートエレベータ３４が設置されている。ボートエレベータ３４の昇降台に連結されたアーム３５には、蓋体としてのシールキャップ３６が水平に取付けられており、ボート２２を処理室２５に装入した状態で処理室２５を気密に閉塞可能となっている。 A boat elevator 34 is installed in the standby section 23 as an elevating mechanism for elevating the boat 22 to the processing chamber 25. A seal cap 36 as a lid is horizontally mounted on the arm 35 connected to the elevator of the boat elevator 34, so that the processing chamber 25 can be airtightly closed with the boat 22 loaded in the processing chamber 25. It has become.
　ボート２２は、複数枚（例えば、５０枚~１７５枚程度）のウェーハ１７をその中心を揃えて水平姿勢で多段に保持する様に構成されている。 The boat 22 is configured to hold a plurality of (for example, about 50 to 175) wafers 17 in multiple stages in a horizontal posture with their centers aligned.
　ボートエレベータ３４と対向した位置にはクリーンユニット３８が配設されている。該クリーンユニット３８は、清浄化した雰囲気若しくは不活性ガスであるクリーンエアを供給する様供給ファン及び防塵フィルタで構成されている。 ク リ ー ン A clean unit 38 is provided at a position facing the boat elevator 34. The clean unit 38 includes a supply fan and a dustproof filter for supplying a clean atmosphere or clean air that is an inert gas.
　クリーンユニット３８から吹出されたクリーンエアは、移載機１１、ボート２２等に流通された後に、ポッド棚９の上方に配設されたダクト３７により吸込まれて、筐体２の外部に排気が成されるか、若しくはクリーンユニット３８によって再び筐体２内に吹出される様に構成されている。 The clean air blown out from the clean unit 38 is circulated through the transfer machine 11, the boat 22, and the like, and is then sucked into the duct 37 provided above the pod shelf 9, and the exhaust air is discharged to the outside of the housing 2. Or is blown into the housing 2 again by the clean unit 38.
　次に、基板処理装置１の作動について説明する。 Next, the operation of the substrate processing apparatus 1 will be described.
　ポッド搬入搬出口６がフロントシャッタ（図示せず）によって開放されると、ポッド８が筐体２の内部へポッド搬入搬出口６を通して搬入され、ロードポート７上に供給される。ロードポート７上にポッド８が供給されると、ポッド搬入搬出口６がフロントシャッタにより閉塞される。 When the pod loading / unloading port 6 is opened by a front shutter (not shown), the pod 8 is loaded into the housing 2 through the pod loading / unloading port 6 and supplied onto the load port 7. When the pod 8 is supplied onto the load port 7, the pod loading / unloading port 6 is closed by the front shutter.
　ロードポート７上のポッド８は、ポッド搬送装置１４によってポッド棚９又は予備ポッド棚１３の指定された棚位置へ載置される。ポッド８は、ポッド棚９又は予備ポッド棚１３で一時的に保管された後、ポッド搬送装置１４によって移載棚１２に移載されるか、若しくはロードポート７から直接移載棚１２に移載される。この時、筐体２内にはクリーンエアが流通され、充満している。 The pod 8 on the load port 7 is placed on the pod shelf 9 or the spare pod shelf 13 at a designated shelf position by the pod transport device 14. The pod 8 is temporarily stored on the pod shelf 9 or the spare pod shelf 13 and then transferred to the transfer shelf 12 by the pod transport device 14 or transferred directly from the load port 7 to the transfer shelf 12. Is done. At this time, the casing 2 is filled with clean air flowing therein.
　ポッド８が移載棚１２に移載されると、ウェーハ１７はポッド８から移載機１１によって取出され、ノッチ合せ装置（図示せず）に移送される。ノッチ合せ装置にてウェーハ１７の位置を整合した後、移載機１１はウェーハ１７を待機部２３へと搬入し、ボート２２に装填（チャージング）する。 When the pod 8 is transferred to the transfer shelf 12, the wafer 17 is taken out of the pod 8 by the transfer machine 11 and transferred to a notch aligning device (not shown). After aligning the position of the wafer 17 with the notch aligning device, the transfer machine 11 carries the wafer 17 into the standby unit 23 and loads (charges) it into the boat 22.
　予め指定された枚数のウェーハ１７がボート２２に装填されると、炉口シャッタ２６を待機位置へと移動させ、炉口シャッタ２６により閉じられていた処理炉２４の炉口部を開放する。続いて、ボート２２はボートエレベータ３４によって上昇され、処理室２５に装入（ローディング）される。 When the predetermined number of wafers 17 are loaded in the boat 22, the furnace port shutter 26 is moved to the standby position, and the furnace port of the processing furnace 24 closed by the furnace port shutter 26 is opened. Subsequently, the boat 22 is lifted by the boat elevator 34 and loaded into the processing chamber 25 (loading).
　ローディング後は、シールキャップ３６によって炉口部が気密に閉塞され、ウェーハ１７に対して所定の基板処理が実行される。 After the loading, the furnace port is hermetically closed by the seal cap 36, and a predetermined substrate processing is performed on the wafer 17.
　処理室２５が所望の圧力（真空度）となる様にガス排気機構（図示せず）によって真空排気される。又、処理室２５が所望の温度分布となる様に加熱部（ヒータ）３９によって所定温度迄加熱される。 (4) The processing chamber 25 is evacuated to a desired pressure (degree of vacuum) by a gas exhaust mechanism (not shown). Further, the processing chamber 25 is heated to a predetermined temperature by a heating unit (heater) 39 so as to have a desired temperature distribution.
　ガス供給機構（図示せず）により、所定の流量に制御された処理ガスが供給され、処理ガスが処理室２５を流通する過程で、ウェーハ１７の表面と接触し、ウェーハ１７の表面上に薄膜が成膜される。更に、反応後の処理ガスは、ガス排気機構により処理室２５から排気される。 A processing gas controlled at a predetermined flow rate is supplied by a gas supply mechanism (not shown), and in the process of flowing the processing gas through the processing chamber 25, the processing gas comes into contact with the surface of the wafer 17 and a thin film is formed on the surface of the wafer 17. Is formed. Further, the processing gas after the reaction is exhausted from the processing chamber 25 by the gas exhaust mechanism.
　予め設定された処理時間が経過すると、ガス供給機構により不活性ガス供給源（図示せず）から不活性ガスが供給され、処理室２５内の雰囲気が不活性ガスに置換されると共に、処理室２５の圧力が常圧に復帰される。 When a preset processing time has elapsed, an inert gas is supplied from an inert gas supply source (not shown) by a gas supply mechanism, and the atmosphere in the processing chamber 25 is replaced with the inert gas. The pressure of 25 is returned to normal pressure.
　ボートエレベータ３４によりシールキャップ３６を介してボート２２が降下される。又、炉口シャッタ２６を炉口位置へと移動させ、処理炉２４の炉口部を閉塞する。 ボ ー ト The boat 22 is lowered by the boat elevator 34 via the seal cap 36. Further, the furnace port shutter 26 is moved to the furnace port position, and the furnace port of the processing furnace 24 is closed.
　処理後のウェーハ１７の搬出については、上記説明と逆の手順で、ウェーハ１７及びポッド８は筐体２の外部へ払出される。未処理のウェーハ１７が、更にボート２２に装填され、ウェーハ１７のバッチ処理が繰返される。 (4) Regarding the unloading of the wafer 17 after the processing, the wafer 17 and the pod 8 are discharged to the outside of the housing 2 in a procedure reverse to the above description. The unprocessed wafers 17 are further loaded into the boat 22, and the batch processing of the wafers 17 is repeated.
　複数のウェーハ１７を収納したポッド８をロードポート７、ポッド棚９、予備ポッド棚１３、移載棚１２との間で搬送する搬送機構、又、ボート２２にポッド８内のウェーハ１７を搬送したり、処理炉２４にボート２２を搬送したりする搬送機構、炉口シャッタ２６を開閉させる駆動機構、処理炉２４に処理ガス等を供給するガス供給機構、処理炉２４内を排気するガス排気機構、処理炉２４を所定温度に加熱するヒータ３９をそれぞれ制御する制御装置４１について、図４を参照して説明する。 A transport mechanism for transporting the pod 8 containing a plurality of wafers 17 between the load port 7, the pod shelf 9, the spare pod shelf 13, and the transfer shelf 12, and a transport mechanism for transporting the wafer 17 in the pod 8 to the boat 22. Mechanism for transporting the boat 22 to the processing furnace 24, a drive mechanism for opening and closing the furnace port shutter 26, a gas supply mechanism for supplying processing gas and the like to the processing furnace 24, and a gas exhaust mechanism for exhausting the processing furnace 24 A control device 41 for controlling the heater 39 for heating the processing furnace 24 to a predetermined temperature will be described with reference to FIG.
　図４中、４２はプロセス系コントローラとしてのプロセス制御部、４３は搬送系コントローラとしての搬送制御部、４４は主制御部を示している。プロセス制御部４２は記憶部４５を具備し、該記憶部４５にはプロセスを実行する為に必要なプロセス実行プログラムが格納されている。搬送制御部４３は記憶部４６を具備し、該記憶部４６にはウェーハ１７の搬送処理を実行する為の搬送プログラムと、ポッド搬送装置１４、移載機１１、ボートエレベータ３４、炉口シャッタ２６のそれぞれの動作を制御する動作制御プログラムとが格納されている。主制御部４４はデータ格納手段４７を具備し、該データ格納手段４７は、例えばＨＤＤ等の外部記憶装置からなる。尚、プロセス実行プログラム、搬送プログラム、動作制御プログラムは、データ格納手段４７に格納されていてもよい。 In FIG. 4, reference numeral 42 denotes a process control unit as a process system controller, 43 denotes a transfer control unit as a transfer system controller, and 44 denotes a main control unit. The process control unit 42 includes a storage unit 45, and the storage unit 45 stores a process execution program required to execute a process. The transfer control unit 43 includes a storage unit 46. The storage unit 46 includes a transfer program for executing a transfer process of the wafer 17, the pod transfer device 14, the transfer machine 11, the boat elevator 34, and the furnace port shutter 26. And an operation control program for controlling each of the operations. The main control unit 44 includes a data storage unit 47, and the data storage unit 47 includes an external storage device such as an HDD. Note that the process execution program, the transport program, and the operation control program may be stored in the data storage unit 47.
　又、図４には、サブコントローラ４８，４９，５０が例示されている。例えば４８は処理炉２４の加熱制御を行う第１サブコントローラ、４９はバルブの開閉、流量制御器５２等の作動を制御して処理炉２４への処理ガスの供給流量を制御する第２サブコントローラ、５０は処理炉２４からのガスの排気を制御し、圧力制御バルブ５３の開度を調整し、処理炉２４内の圧力を制御する第３サブコントローラを示している。 FIG. 4 illustrates the sub-controllers 48, 49, and 50. For example, 48 is a first sub-controller for controlling the heating of the processing furnace 24, 49 is a second sub-controller for controlling the opening and closing of the valve, the operation of the flow controller 52 and the like, and controlling the supply flow rate of the processing gas to the processing furnace 24. Reference numeral 50 denotes a third sub-controller that controls the exhaust of gas from the processing furnace 24, adjusts the opening of the pressure control valve 53, and controls the pressure in the processing furnace 24.
　例えば、５４は温度検出器、５５は流量検出器、５６は圧力センサである。尚、各プロセスアクチュエータ３９，５２，５３の状態を検出する検出器やセンサ類が、図では１つずつしか示されていないが、複数設けられていても構わない。 For example, 54 is a temperature detector, 55 is a flow detector, and 56 is a pressure sensor. Although only one detector or sensor for detecting the state of each process actuator 39, 52, 53 is shown in the figure, a plurality of detectors or sensors may be provided.
　搬送制御部４３は各種搬送制御モジュールを制御し、該各種搬送制御モジュールは後述する動作アクチュエータを制御する第１動作制御部５７、第２動作制御部５８、第３動作制御部５９、第４動作制御部６０からなっている。 The transport control unit 43 controls various transport control modules. The various transport control modules control a first actuator, a second operation controller 58, a third operation controller 59, and a fourth operation, which control operation actuators described later. It comprises a control unit 60.
　ドライバとしての第１動作制御部５７は、ポッド搬送装置１４を駆動する駆動部であるサーボモータ（以下第１動作アクチュエータ）６２を制御する。又、ドライバとしての第２動作制御部５８は、移載機１１を進退させ、昇降させ、回転させる駆動部であるサーボモータ（以下第２動作アクチュエータ）６５を制御する。又、ドライバとしての第３動作制御部５９は、ボートエレベータ３４を駆動する駆動部であるサーボモータ（以下第３動作アクチュエータ）６６を制御する。更に、ドライバとしての第４動作制御部６０は、炉口シャッタ２６の蓋部２７を駆動する駆動部である電磁切換弁（以下第４動作アクチュエータ）６７を制御している。 The first operation control unit 57 as a driver controls a servomotor (hereinafter, a first operation actuator) 62 which is a driving unit for driving the pod transport device 14. Further, the second operation control unit 58 as a driver controls a servomotor (hereinafter, a second operation actuator) 65 which is a driving unit for moving the transfer machine 11 forward and backward, moving up and down, and rotating. The third operation control unit 59 as a driver controls a servomotor (hereinafter, a third operation actuator) 66 that is a driving unit that drives the boat elevator 34. Further, the fourth operation control unit 60 as a driver controls an electromagnetic switching valve (hereinafter, a fourth operation actuator) 67 which is a driving unit for driving the lid 27 of the furnace port shutter 26.
　各動作アクチュエータには、各動作アクチュエータの状態（例えば、限界地点にいるかどうか等の位置状態）を検出する状態検出センサ６８，７１，７２，７３が設けられている。各状態検出センサ６８，７１，７２，７３は、各動作アクチュエータの状態を検出し、検出結果を第１動作制御部５７、第２動作制御部５８、第３動作制御部５９、第４動作制御部６０にそれぞれフィードバックする機能を有している。各動作制御部５７，５８，５９，６０はメモリを有し、フィードバックされたデータ（検出結果）を一時的に保存することが可能である。尚、図では、各動作アクチュエータ６２，６５，６６，６７に１つの状態検出センサ６８，７１，７２，７３が設けられているが、本形態に限定されない。言う迄もなく、各動作アクチュエータに複数の状態検出センサを設けても構わない。 Each operation actuator is provided with a state detection sensor 68, 71, 72, 73 for detecting the state of each operation actuator (for example, a position state such as whether or not it is at a limit point). Each of the state detection sensors 68, 71, 72, and 73 detects the state of each operation actuator, and outputs the detection results to the first operation control unit 57, the second operation control unit 58, the third operation control unit 59, and the fourth operation control unit. Each section 60 has a function of feeding back the information. Each of the operation control units 57, 58, 59, and 60 has a memory, and can temporarily store feedback data (detection result). Although one state detection sensor 68, 71, 72, 73 is provided in each of the operation actuators 62, 65, 66, 67 in the figure, the present invention is not limited to this embodiment. Needless to say, a plurality of state detection sensors may be provided for each operation actuator.
　第１動作制御部５７はポッド８をロードポート７から移載棚１２等に移載するポッド搬送装置１４を駆動制御する。第２動作制御部５８はポッド８からウェーハ１７を取出し、ボート２２に装填する移載機１１を駆動制御する。第３動作制御部５９はウェーハ１７が装填されたボート２２を処理炉２４に搬入するボートエレベータ３４を駆動制御する。第４動作制御部６０は処理炉２４の炉口部を開閉する炉口シャッタ２６を駆動制御する。 {Circle around (1)} The first operation control unit 57 controls the drive of the pod transport device 14 that transfers the pod 8 from the load port 7 to the transfer shelf 12 or the like. The second operation control unit 58 takes out the wafer 17 from the pod 8 and drives and controls the transfer machine 11 to be loaded on the boat 22. The third operation control unit 59 drives and controls the boat elevator 34 that carries the boat 22 loaded with the wafers 17 into the processing furnace 24. The fourth operation control unit 60 drives and controls the furnace port shutter 26 that opens and closes the furnace port of the processing furnace 24.
　入力デバイス７５はキーボード、マウス、操作パネル等を示し、モニタ７６は設定画面等を含む操作画面である。操作部７７はモニタ７６から入力デバイス７５を用いて各種指示を受付ける。例えば、モニタ７６は、移載機１１がポッド８とボート２２の少なくとも一方に向かう搬送動作、移載機１１がポッド８とボート２２の少なくとも一方から離れる搬送動作に対して、それぞれ個別に設定される様構成される。 The input device 75 indicates a keyboard, a mouse, an operation panel and the like, and the monitor 76 is an operation screen including a setting screen and the like. The operation unit 77 receives various instructions from the monitor 76 using the input device 75. For example, the monitor 76 is individually set for a transfer operation in which the transfer device 11 is directed to at least one of the pod 8 and the boat 22 and a transfer operation in which the transfer device 11 is separated from at least one of the pod 8 and the boat 22. It is configured to be.
　第１サブコントローラ４８、第２サブコントローラ４９、第３サブコントローラ５０にはプロセス制御部４２から設定値の指示、或は処理シーケンスに従った指令信号が入力される。プロセス制御部４２は温度検出器５４、流量検出器５５、圧力センサ５６が検出した検出結果に基づき、第１サブコントローラ４８、第２サブコントローラ４９、第３サブコントローラ５０を統括して制御する。 (4) The process controller 42 inputs a set value instruction or a command signal according to a processing sequence to the first sub-controller 48, the second sub-controller 49, and the third sub-controller 50. The process control unit 42 controls the first sub-controller 48, the second sub-controller 49, and the third sub-controller 50 based on the detection results detected by the temperature detector 54, the flow rate detector 55, and the pressure sensor 56.
　プロセス制御部４２は、主制御部４４を介した操作部７７からの指令により、基板処理を実行する。基板処理は、プロセス制御部４２が記憶部４５に格納されたプログラムに従って、他の制御系とは独立して実行される。従って、搬送制御部４３、主制御部４４に問題が発生しても、基板処理は中断されることなく完遂される。 (4) The process control unit 42 executes the substrate processing according to a command from the operation unit 77 via the main control unit 44. The substrate processing is executed by the process control unit 42 independently of other control systems according to a program stored in the storage unit 45. Therefore, even if a problem occurs in the transport control unit 43 and the main control unit 44, the substrate processing is completed without interruption.
　第１動作制御部５７は、状態検出センサ６８が検出した検出結果を基に第１動作アクチュエータ６２を制御している。第２動作制御部５８は、状態検出センサ７１が検出した検出結果を基に第２動作アクチュエータ６５を制御している。又、第３動作制御部５９は、状態検出センサ７２が検出した検出結果を基に第３動作アクチュエータ６６を制御している。更に、第４動作制御部６０は、状態検出センサ７３が検出した検出結果を基に第４動作アクチュエータ６７を制御する等、各動作制御部が各状態検出センサに対応する各動作アクチュエータを制御する。 The first operation control unit 57 controls the first operation actuator 62 based on the detection result detected by the state detection sensor 68. The second operation control unit 58 controls the second operation actuator 65 based on the detection result detected by the state detection sensor 71. Further, the third operation control section 59 controls the third operation actuator 66 based on the detection result detected by the state detection sensor 72. Furthermore, the fourth operation control unit 60 controls each operation actuator corresponding to each state detection sensor, such as controlling the fourth operation actuator 67 based on the detection result detected by the state detection sensor 73. .
　搬送制御部４３は、操作部７７からの指示によって搬送処理を実行する。ポッド８やウェーハ１７は、搬送制御部４３が記憶部４６に格納された搬送プログラム、及び動作制御プログラムに従って、他の制御系とは独立して搬送される。 (4) The transport control unit 43 executes a transport process according to an instruction from the operation unit 77. The pod 8 and the wafer 17 are transferred independently of other control systems according to the transfer program and the operation control program stored in the storage unit 46 by the transfer control unit 43.
　データ格納手段４７には、基板処理進行を統括するプログラム、処理内容、処理条件を設定する為の設定プログラム、処理炉２４の加熱や処理ガスの供給及び排気等の設定条件が格納された基板処理の為のレシピ、通信プログラム、アラーム情報表示プログラム、パラメータ編集プログラム等の各種プログラムがファイルとして格納されている。 The data storage unit 47 stores a program for controlling the progress of the substrate processing, a setting program for setting processing contents and processing conditions, and a substrate processing in which setting conditions such as heating of the processing furnace 24 and supply and exhaust of the processing gas are stored. Various programs such as a recipe, a communication program, an alarm information display program, and a parameter editing program are stored as files.
　通信プログラムはプロセス制御部４２、搬送制御部４３とＬＡＮ等の通信手段を介してデータの送受信を行うものである。又、アラーム情報表示プログラムは状態検出センサ６８，７１，７２，７３によって異常が検出された場合に、動作アクチュエータ６２，６５，６６，６７の異常原因、例えば停止した原因のアラーム情報をモニタ７６に表示するものである。 The communication program transmits and receives data to and from the process control unit 42 and the transport control unit 43 via communication means such as a LAN. Further, the alarm information display program displays, on the monitor 76, alarm information on the cause of an abnormality of the operation actuator 62, 65, 66, 67, for example, the cause of the stop, when an abnormality is detected by the state detection sensors 68, 71, 72, 73. To display.
　データ格納手段４７は、データ格納領域を有している。該データ格納領域には、ウェーハ１７の搬送に必要とされるパラメータが格納され、更に搬送機構に予め設定されている設定情報、状態検出センサ６８，７１，７２，７３によって検出された検出結果、及び処理状態等の情報が格納される。 The data storage means 47 has a data storage area. In the data storage area, parameters required for transporting the wafer 17 are stored, and further, setting information preset in the transport mechanism, detection results detected by the state detection sensors 68, 71, 72, 73, And information such as the processing state.
　ウェーハ１７の搬送処理を行なう際には、目標位置、速度、加速度、減速度等の設定値に加え、トルク制御の有無を操作部７７から入力する。その後、操作部７７から搬送処理の実行指示を入力することで、記憶部４６に格納されている搬送プログラム、及び搬送プログラムからの指示に従って、動作制御プログラムが実行される。 (4) When carrying out the transfer process of the wafer 17, in addition to the set values such as the target position, speed, acceleration, deceleration, etc., the presence or absence of the torque control is inputted from the operation unit 77. Thereafter, by inputting an instruction to execute the transfer process from the operation unit 77, the operation control program is executed in accordance with the transfer program stored in the storage unit 46 and the instructions from the transfer program.
　搬送プログラムが実行されると、搬送制御部４３が第１動作制御部５７、第２動作制御部５８、第３動作制御部５９、第４動作制御部６０を介して、ポッド搬送装置１４、移載機１１、ボートエレベータ３４の各搬送機構及び炉口シャッタ２６を駆動制御する。 When the transport program is executed, the transport control unit 43 causes the pod transport device 14 to move through the first operation control unit 57, the second operation control unit 58, the third operation control unit 59, and the fourth operation control unit 60. The drive of the loading machine 11, each transport mechanism of the boat elevator 34, and the furnace port shutter 26 is controlled.
　炉口シャッタ２６は、基板処理中、及びボート２２の搬入及び搬出時には蓋部２７を待機位置へと移動させ、処理炉２４の炉口部を開放している。又、それ以外の時には蓋部２７を炉口位置へと移動させ、炉口部を閉塞している。 (4) The furnace port shutter 26 moves the lid 27 to the standby position during substrate processing and when the boat 22 is loaded and unloaded, and opens the furnace port of the processing furnace 24. At other times, the lid 27 is moved to the furnace port position to close the furnace port.
　ここで、何らかの理由により作動流体の流通が遮断されると、シリンダ３２内の圧力が低下し、待機位置（又は炉口位置）で維持できなくなり、待機位置と炉口位置との間で蓋部２７が停止してしまう場合がある。この場合、ボート２２と蓋部２７が接触し、ボート２２が破損する虞れがある。 Here, if the flow of the working fluid is interrupted for some reason, the pressure in the cylinder 32 decreases and cannot be maintained at the standby position (or the furnace port position). 27 may stop. In this case, the boat 22 may come into contact with the lid 27, and the boat 22 may be damaged.
　そこで、本実施例では、作動流体の流通が遮断された場合であっても、蓋部２７を待機位置又は炉口位置に保持できる様にしている。以下、図５を参照し、蓋部２７の位置を保持可能な流体回路（流体圧駆動システム）３３について説明する。 Therefore, in this embodiment, even when the flow of the working fluid is shut off, the lid 27 can be held at the standby position or the furnace port position. Hereinafter, the fluid circuit (fluid pressure drive system) 33 capable of holding the position of the lid 27 will be described with reference to FIG.
　流体回路３３は、作動流体により駆動されるシリンダ３２と、第１給排流路８２と、第２給排流路８４とを有している。第１給排流路８２は、シリンダ３２の第２ポートとしての第２エアポート８１と一端が接続されており、第２給排流路８４は、シリンダ３２の第１ポートとしての第１エアポート８３と一端が接続されている。尚、本実施例では、シリンダ３２として、ロータリアクチュエータが用いられる。 The fluid circuit 33 includes the cylinder 32 driven by the working fluid, the first supply / discharge flow path 82, and the second supply / discharge flow path 84. One end of the first supply / discharge passage 82 is connected to a second air port 81 serving as a second port of the cylinder 32, and the second supply / discharge passage 84 is connected to a first air port 83 serving as a first port of the cylinder 32. And one end are connected. In this embodiment, a rotary actuator is used as the cylinder 32.
　第１給排流路８２上には、第２ポート８１側から順に、第１チェック弁としての第１パイロットチェック弁８５、第１流速調整部としての第１スピードコントローラ８６が設けられている。又、第１給排流路８２のシリンダ３２と第１チェック弁８５との間には第１分岐流路８７が接続され、該第１分岐流路８７には第１圧力開放弁８８が設けられている。更に、第１給排流路８２の他端には、電磁切換弁６７が接続されている。尚、基板処理装置１が正常に可動している場合には、第１圧力開放弁８８は閉となっている。 に は A first pilot check valve 85 as a first check valve and a first speed controller 86 as a first flow rate adjusting unit are provided on the first supply / discharge flow path 82 in order from the second port 81 side. A first branch flow path 87 is connected between the cylinder 32 of the first supply / discharge flow path 82 and the first check valve 85, and a first pressure release valve 88 is provided in the first branch flow path 87. Have been. Further, an electromagnetic switching valve 67 is connected to the other end of the first supply / discharge flow path 82. When the substrate processing apparatus 1 is operating normally, the first pressure release valve 88 is closed.
　第２給排流路８４上には、第１ポート８３側から順に、第２チェック弁としての第２パイロットチェック弁９１、第２流速調整部としての第２スピードコントローラ９２が設けられている。又、第２給排流路８４のシリンダ３２と第２チェック弁９１との間には第２分岐流路９３が接続され、該第２分岐流路９３には第２圧力開放弁９４が設けられている。尚、基板処理装置１が正常に可動している場合には、第２圧力開放弁９４は閉となっている。 A second pilot check valve 91 as a second check valve and a second speed controller 92 as a second flow rate adjuster are provided on the second supply / discharge flow path 84 in order from the first port 83 side. A second branch passage 93 is connected between the cylinder 32 of the second supply / discharge passage 84 and the second check valve 91, and a second pressure release valve 94 is provided in the second branch passage 93. Have been. When the substrate processing apparatus 1 is operating normally, the second pressure release valve 94 is closed.
　第１チェック弁８５は、第１パイロットポート８５ａと逆止弁８５ｂにより構成される。又、第２チェック弁９１は、第２パイロットポート９１ａと逆止弁９１ｂにより構成される。 The first check valve 85 includes a first pilot port 85a and a check valve 85b. The second check valve 91 includes a second pilot port 91a and a check valve 91b.
　第１給排流路８２の第１流速調整部８６と電磁切換弁６７との間には、第１パイロット流路９７の一端が接続され、該第１パイロット流路９７の他端は第２パイロットポート９１ａに接続されている。又、第２給排流路８４の第２流速調整部９２と電磁切換弁６７との間には、第２パイロット流路９８の一端が接続され、該第２パイロット流路９８の他端は第１パイロットポート８５ａに接続されている。 One end of a first pilot flow path 97 is connected between the first flow rate adjusting section 86 of the first supply / discharge flow path 82 and the electromagnetic switching valve 67, and the other end of the first pilot flow path 97 is connected to the second flow path. It is connected to the pilot port 91a. One end of a second pilot flow path 98 is connected between the second flow rate adjusting unit 92 of the second supply / discharge flow path 84 and the electromagnetic switching valve 67, and the other end of the second pilot flow path 98 is It is connected to the first pilot port 85a.
　更に、電磁切換弁６７には作動流体供給流路９９の一端が接続され、該作動流体供給流路９９の他端には作動流体供給源１０１が接続されている。電磁切換弁６７を作動させることで、第１給排流路８２と第２給排流路８４のいずれか一方に作動流体供給源１０１から作動流体を供給し、第１給排流路８２と第２給排流路８４のいずれか他方から作動流体を排出できる様になっている。 Further, one end of a working fluid supply channel 99 is connected to the electromagnetic switching valve 67, and a working fluid supply source 101 is connected to the other end of the working fluid supply channel 99. By operating the electromagnetic switching valve 67, a working fluid is supplied from the working fluid supply source 101 to one of the first supply / discharge flow path 82 and the second supply / discharge flow path 84, and the first supply / discharge flow path 82 The working fluid can be discharged from one of the second supply / discharge passages 84.
　上記の様に構成された流体回路３３に於いて、先ず図５に示す様に、第１給排流路８２と作動流体供給流路９９とが連通する様電磁切換弁６７を作動させた場合について説明する。 In the fluid circuit 33 configured as described above, first, as shown in FIG. 5, when the electromagnetic switching valve 67 is operated so that the first supply / discharge flow path 82 and the working fluid supply flow path 99 communicate with each other. Will be described.
　作動流体供給源１０１から供給される作動流体の大部分は、第１流速調整部８６を経由し、第１チェック弁８５を通過した後、第２ポート８１よりシリンダ３２内に供給される。この時、作動流体は、第１流速調整部８６の絞り流路８６ａと共に逆止弁８６ｂも流通可能であるので、作動流体は流量が制限されることなくシリンダ３２内に供給される。 Most of the working fluid supplied from the working fluid supply source 101 passes through the first flow rate adjustment unit 86, passes through the first check valve 85, and is then supplied into the cylinder 32 from the second port 81. At this time, since the working fluid can also flow through the check valve 86b together with the throttle flow path 86a of the first flow rate adjusting unit 86, the working fluid is supplied into the cylinder 32 without restriction of the flow rate.
　又、作動流体の一部は、第１パイロット流路９７を介して第２パイロットポート９１ａに導入される。第２パイロットポート９１ａに作動流体が導入されることで、パイロット圧により逆止弁９１ｂが機能を喪失し、シリンダ３２から電磁切換弁６７に向かって作動流体が流通可能となる。 一部 A part of the working fluid is introduced into the second pilot port 91a via the first pilot channel 97. When the working fluid is introduced into the second pilot port 91a, the check valve 91b loses its function due to the pilot pressure, and the working fluid can flow from the cylinder 32 toward the electromagnetic switching valve 67.
　これにより、シリンダ３２内に導入された作動流体は、第１ポート８３から排出され、第２チェック弁９１、第２流速調整部９２、電磁切換弁６７を介して大気に排出される。シリンダ３２への作動流体の給排により、シリンダ３２が動作し、蓋部２７が例えば待機位置から炉口位置へと移動し、炉口部が炉口シャッタ２６により閉塞される。 Accordingly, the working fluid introduced into the cylinder 32 is discharged from the first port 83, and discharged to the atmosphere via the second check valve 91, the second flow rate adjusting unit 92, and the electromagnetic switching valve 67. By supplying and discharging the working fluid to and from the cylinder 32, the cylinder 32 operates, the lid 27 moves from, for example, the standby position to the furnace port position, and the furnace port is closed by the furnace port shutter 26.
　尚、作動流体は、第２流速調整部９２を通過する過程で逆止弁９２ｂが作用するので、絞り流路９２ａにより作動流体の流量が制限される。従って、作動流体が急激に大気に排出されず、蓋部２７が急激に待機位置から炉口位置へと移動することがない。 The check valve 92b acts during the passage of the working fluid through the second flow rate adjusting section 92, so that the flow rate of the working fluid is restricted by the throttle flow path 92a. Therefore, the working fluid is not rapidly discharged to the atmosphere, and the lid 27 does not suddenly move from the standby position to the furnace port position.
　同様に、電磁切換弁６７を切替え、作動流体供給流路９９と第２給排流路８４とを連通させた場合には、作動流体の大部分が第２流速調整部９２、第２チェック弁９１を経て第１ポート８３からシリンダ３２内に供給される。この時、作動流体は、第２流速調整部９２の絞り流路９２ａと共に逆止弁９２ｂも流通可能であるので、作動流体は流量が制限されることなくシリンダ３２内に供給される。 Similarly, when the electromagnetic switching valve 67 is switched to make the working fluid supply flow path 99 and the second supply / discharge flow path 84 communicate with each other, most of the working fluid flows through the second flow rate adjusting unit 92 and the second check valve. The gas is supplied from the first port 83 into the cylinder 32 via the valve 91. At this time, the working fluid can flow through the check valve 92b together with the throttle flow path 92a of the second flow rate adjusting section 92, so that the working fluid is supplied into the cylinder 32 without restriction of the flow rate.
　又、作動流体の一部は、第２パイロット流路９８を介して第１パイロットポート８５ａに導入される。第１パイロットポート８５ａに作動流体が導入されることで、パイロット圧により逆止弁８５ｂが機能を喪失し、シリンダ３２から電磁切換弁６７に向かって作動流体が流通可能となる。 一部 A part of the working fluid is introduced into the first pilot port 85a via the second pilot flow path 98. When the working fluid is introduced into the first pilot port 85a, the check valve 85b loses its function due to the pilot pressure, and the working fluid can flow from the cylinder 32 toward the electromagnetic switching valve 67.
　これにより、シリンダ３２内に導入された作動流体は、第２ポート８１から排出され、第１チェック弁８５、第１流速調整部８６、電磁切換弁６７を介して大気に排出される。シリンダ３２への作動流体の給排により、シリンダ３２が動作し、蓋部２７が例えば炉口位置から待機位置へと移動し、炉口部が開放される。即ち、蓋部２７は、流体回路（流体圧駆動システム）３３内に供給される作動流体の方向に応じて、待機位置と炉口位置との間を移動する様に構成されている。 Accordingly, the working fluid introduced into the cylinder 32 is discharged from the second port 81, and is discharged to the atmosphere via the first check valve 85, the first flow rate adjusting unit 86, and the electromagnetic switching valve 67. By supplying and discharging the working fluid to and from the cylinder 32, the cylinder 32 operates, the lid 27 moves from, for example, the furnace port position to the standby position, and the furnace port is opened. That is, the lid 27 is configured to move between the standby position and the furnace port position according to the direction of the working fluid supplied into the fluid circuit (fluid pressure drive system) 33.
　尚、作動流体は、第１流速調整部８６を通過する過程で逆止弁８６ｂが作用するので、絞り流路８６ａにより作動流体の流量が制限される。従って、作動流体が急激に大気に排出されず、蓋部２７が急激に炉口位置から待機位置へと移動することがない。 The check valve 86b acts during the passage of the working fluid through the first flow rate adjusting unit 86, so that the flow rate of the working fluid is restricted by the throttle passage 86a. Therefore, the working fluid is not rapidly discharged to the atmosphere, and the lid 27 does not suddenly move from the furnace port position to the standby position.
　上記した流体回路３３に於いて、作動流体供給源１０１から供給される作動流体が遮断された場合について説明する。例えば、作動流体が第１給排流路８２内に供給される様電磁切換弁６７を配置させていた場合、作動流体が第１給排流路８２内に供給されず、第２パイロットポート９１ａにも作動流体が供給されない。 A case where the working fluid supplied from the working fluid supply source 101 is cut off in the above-described fluid circuit 33 will be described. For example, when the electromagnetic switching valve 67 is arranged so that the working fluid is supplied into the first supply / discharge flow path 82, the working fluid is not supplied into the first supply / discharge flow path 82, and the second pilot port 91a No working fluid is supplied.
　従って、逆止弁９１ｂが機能を維持し、シリンダ３２内に作動流体が封じ込まれるので、シリンダ３２内の作動流体が大気に排出されることがなく、シリンダ３２内の圧力が維持される。従って、炉口シャッタ２６の状態が維持され、蓋部２７が移動することがないので、蓋部２７は炉口位置で保持される。 Therefore, the check valve 91b maintains its function and the working fluid is sealed in the cylinder 32, so that the working fluid in the cylinder 32 is not discharged to the atmosphere, and the pressure in the cylinder 32 is maintained. Therefore, the state of the furnace port shutter 26 is maintained, and the cover section 27 does not move, so that the cover section 27 is held at the furnace port position.
　同様に、作動流体が第２給排流路８４内に供給される様電磁切換弁６７を配置させていた場合、作動流体は第２給排流路８４内に供給されず、第１パイロットポート８５ａにも作動流体が供給されない。 Similarly, when the electromagnetic switching valve 67 is arranged so that the working fluid is supplied into the second supply / discharge passage 84, the working fluid is not supplied into the second supply / discharge passage 84, and the first pilot port No working fluid is supplied to 85a.
　従って、逆止弁８５ｂが機能を維持し、シリンダ３２内に作動流体が封じ込まれるので、シリンダ３２内の作動流体が大気に排出されることがなく、シリンダ３２内の圧力が維持される。従って、炉口シャッタ２６の状態が維持され、蓋部２７が移動することがないので、蓋部２７は待機位置で保持される。 Therefore, the check valve 85b maintains its function and the working fluid is sealed in the cylinder 32, so that the working fluid in the cylinder 32 is not discharged to the atmosphere, and the pressure in the cylinder 32 is maintained. Accordingly, the state of the furnace port shutter 26 is maintained, and the lid 27 does not move, so that the lid 27 is held at the standby position.
　尚、作動流体供給源１０１からの作動流体が遮断された場合や、電磁切換弁６７が故障した場合等、炉口シャッタ２６を手動で動作させる必要がある場合がある。この場合、例えばメンテナンス時や装置組立て時等に、正面メンテナンス扉５を開放し、第１圧力開放弁８８或は第２圧力開放弁９４を開放する。これにより、シリンダ３２内の作動流体が排出され、手動で蓋部２７の位置を移動させることができる。 In some cases, it is necessary to manually operate the furnace port shutter 26, for example, when the working fluid from the working fluid supply source 101 is shut off or when the electromagnetic switching valve 67 breaks down. In this case, for example, at the time of maintenance or assembling of the apparatus, the front maintenance door 5 is opened, and the first pressure release valve 88 or the second pressure release valve 94 is opened. Accordingly, the working fluid in the cylinder 32 is discharged, and the position of the lid 27 can be manually moved.
　上述の様に、本実施例では、炉口シャッタ２６の蓋部２７を動作させるシリンダ３２の流体回路３３に於いて、第１給排流路８２と第２給排流路８４にそれぞれ第１チェック弁８５と第２チェック弁９１を設けると共に、第１給排流路８２と第２パイロットポート９１ａとを接続する第１パイロット流路９７及び第２給排流路８４と第１パイロットポート８５ａとを接続する第２パイロット流路９８を設けている。 As described above, in the present embodiment, in the fluid circuit 33 of the cylinder 32 that operates the cover 27 of the furnace port shutter 26, the first supply / discharge flow path 82 and the second supply / discharge flow path 84 A check valve 85 and a second check valve 91 are provided, and a first pilot passage 97 and a second supply / discharge passage 84 connecting the first supply / discharge passage 82 and the second pilot port 91a to the first pilot port 85a. And a second pilot flow path 98 that connects the second pilot flow path and the second pilot flow path.
　これにより、何らかの理由により作動流体供給源１０１からの作動流体が遮断した場合には、第１パイロットポート８５ａ及び第２パイロットポート９１ａに作動流体が供給されず、逆止弁８５ｂ，９１ｂの機能が維持されるので、シリンダ３２内の作動流体が排出されることがなく、シリンダ３２内の圧力が維持される。 Accordingly, when the working fluid from the working fluid supply source 101 is shut off for some reason, the working fluid is not supplied to the first pilot port 85a and the second pilot port 91a, and the functions of the check valves 85b and 91b are reduced. Since the pressure is maintained, the working fluid in the cylinder 32 is not discharged, and the pressure in the cylinder 32 is maintained.
　従って、蓋部２７は待機位置又は炉口位置で保持され、待機位置と炉口位置との間に移動することがないので、蓋部２７とボート２２等の部材との接触や接触による破損を防止することができる。 Therefore, since the lid 27 is held at the standby position or the furnace port position and does not move between the standby position and the furnace port position, contact between the lid 27 and members such as the boat 22 or damage due to contact is prevented. Can be prevented.
　本実施例では、第１給排流路８２と第２給排流路８４にそれぞれ第１流速調整部８６と第２流速調整部９２を設けているので、蓋部２７が急激に移動することがなく、アーム２９と保持部３１の接続箇所等が破損するのを防止することができる。 In the present embodiment, since the first flow rate adjusting section 86 and the second flow rate adjusting section 92 are provided in the first supply / discharge flow path 82 and the second supply / discharge flow path 84, respectively, the lid section 27 moves rapidly. Therefore, it is possible to prevent the connection portion between the arm 29 and the holding portion 31 from being damaged.
　又、第１圧力開放弁８８と第２圧力開放弁９４が設けられ、手動でシリンダ３２内の作動流体を排出することができるので、待機位置又は炉口位置で保持された蓋部２７の位置を手動で変更することができる。 In addition, since the first pressure release valve 88 and the second pressure release valve 94 are provided and the working fluid in the cylinder 32 can be manually discharged, the position of the lid portion 27 held at the standby position or the furnace port position is provided. Can be changed manually.
　尚、本実施例では、シリンダ３２としてロータリアクチュエータを用いているが、圧縮流体駆動のシリンダであれば他のシリンダであってもよい。 In the present embodiment, a rotary actuator is used as the cylinder 32, but any other cylinder may be used as long as it is a compressed fluid driven cylinder.
　本開示は、半導体製造装置だけではなく、ＬＣＤ装置の様なガラス基板を処理する装置でも適用できる。又、本開示は、基板に生成される薄膜の膜種は特に限定されない。例えば、窒化膜（ＳｉＮ等）、酸化膜（ＳｉＯ等）、金属酸化膜等、色々な膜種の薄膜を形成する処理にも適用できる。 The present disclosure can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus. In the present disclosure, the type of the thin film formed on the substrate is not particularly limited. For example, the present invention can be applied to a process for forming various types of thin films such as a nitride film (eg, SiN), an oxide film (eg, SiO), and a metal oxide film.
　１　基板処理装置、２４　処理炉、２６　炉口シャッタ、２７　蓋部、３３　流体回路、８１　第２ポート、８２　第１給排流路、８３　第１ポート、８４　第２給排流路、８５　第１チェック弁、９１　第２チェック弁、９７　第１パイロット流路、９８　第２パイロット流路 1 substrate processing apparatus, 24 processing furnace, 26 furnace shutter, 27 lid, 33 fluid circuit, 81 second port, 82 first supply / discharge channel, 83 first port, 84 second supply / discharge channel, 85 second 1 check valve, 91 # second check valve, 97 # first pilot flow path, 98 # second pilot flow path

Claims (11)

  1. 　基板を保持した基板保持具を装入した状態で、前記基板を処理する処理炉と、
    該処理炉の炉口を覆う蓋部と、
    第１ポートと第２ポートとを備え、該蓋部を動作させるシリンダと、
    前記蓋部と前記シリンダとを連結固定するアームとを備えた蓋開閉機構と
    を備え、
    前記蓋開閉機構は、
    前記シリンダの前記第２ポートと電磁切換弁との間を接続する第１給排流路と、
    前記シリンダの前記第１ポートと前記電磁切換弁との間を接続する第２給排流路と、
    前記第１給排流路上に設けられた第１流速調整部及び第１チェック弁と、
    前記第２給排流路上に設けられた第２流速調整部及び第２チェック弁と、
    前記第１給排流路から分岐して前記第２チェック弁のパイロットポートに接続される第１パイロット流路と、
    前記第２給排流路から分岐して前記第１チェック弁のパイロットポートに接続される第２パイロット流路とを具備する流体圧駆動システムにより駆動される様構成された基板処理装置。     A processing furnace for processing the substrate in a state where the substrate holder holding the substrate is loaded,
    A lid covering the furnace port of the processing furnace;
    A cylinder having a first port and a second port for operating the lid;
    A lid opening / closing mechanism including an arm that couples and fixes the lid and the cylinder,
    The lid opening and closing mechanism,
    A first supply / discharge passage connecting between the second port of the cylinder and an electromagnetic switching valve;
    A second supply / discharge passage connecting between the first port of the cylinder and the electromagnetic switching valve;
    A first flow rate adjusting unit and a first check valve provided on the first supply / discharge flow path;
    A second flow rate adjusting unit and a second check valve provided on the second supply / discharge flow path;
    A first pilot flow path branched from the first supply / discharge flow path and connected to a pilot port of the second check valve;
    A substrate processing apparatus configured to be driven by a fluid pressure drive system including a second pilot flow path branched from the second supply / discharge flow path and connected to a pilot port of the first check valve.
  2. 　前記シリンダを駆動させる為の作動流体を供給する流体供給源を更に具備し、
    前記流体圧駆動システムは前記作動流体を前記シリンダ内部に封じ込める様構成された請求項１に記載の基板処理装置。     Further comprising a fluid supply source for supplying a working fluid for driving the cylinder,
    The substrate processing apparatus according to claim 1, wherein the fluid pressure driving system is configured to confine the working fluid inside the cylinder.
  3. 　前記流体圧駆動システムは、前記流体供給源より供給される前記作動流体が遮断された場合であっても、前記シリンダ内の圧力低下を防止する様に構成された請求項２に記載の基板処理装置。 3. The substrate processing apparatus according to claim 2, wherein the fluid pressure driving system is configured to prevent a pressure drop in the cylinder even when the working fluid supplied from the fluid supply source is shut off. apparatus.
  4. 　前記流体圧駆動システムは、前記流体供給源より供給される前記作動流体が遮断された場合であっても、前記蓋開閉機構の状態を維持する様に構成された請求項２に記載の基板処理装置。 3. The substrate processing apparatus according to claim 2, wherein the fluid pressure driving system is configured to maintain the state of the lid opening / closing mechanism even when the working fluid supplied from the fluid supply source is shut off. apparatus.
  5. 　前記蓋開閉機構の蓋部を炉口位置又は閉塞位置で保持する様に構成された請求項４に記載の基板処理装置。 5. The substrate processing apparatus according to claim 4, wherein the lid of the lid opening / closing mechanism is configured to be held at a furnace port position or a closed position.
  6. 　前記流体供給源と前記第１給排流路とを連通させる様に前記電磁切換弁を作動させると、前記作動流体が前記第１チェック弁を貫通して前記第２ポートより前記シリンダ内に供給されると共に、前記第１パイロット流路を介して前記第２チェック弁のパイロットポートに導入され、前記第２チェック弁の逆止弁としての機能が消失される様に構成された請求項２に記載の基板処理装置。 When the electromagnetic switching valve is operated so that the fluid supply source communicates with the first supply / discharge flow path, the working fluid is supplied into the cylinder from the second port through the first check valve. And the second check valve is configured to be introduced into the pilot port of the second check valve via the first pilot flow path, so that the function of the second check valve as a check valve is lost. The substrate processing apparatus according to any one of the preceding claims.
  7. 　前記流体供給源と前記第１給排流路とを連通させる様に前記電磁切換弁を作動させると、前記シリンダの前記第１ポートから排出される前記作動流体が、前記第２給排流路及び前記電磁切換弁を介して大気側に排出される様構成された請求項２に記載の基板処理装置。 When the electromagnetic switching valve is operated so that the fluid supply source communicates with the first supply / discharge flow path, the working fluid discharged from the first port of the cylinder is supplied to the second supply / discharge flow path. 3. The substrate processing apparatus according to claim 2, wherein said substrate processing apparatus is configured to be discharged to the atmosphere side via said electromagnetic switching valve.
  8. 　基板を処理する処理炉の炉口を覆う蓋部と、該蓋部を動作させるシリンダと、前記蓋部と前記シリンダとを連結固定するアームとを備えた蓋開閉機構であって、
    前記シリンダの第２ポートと電磁切換弁との間を接続する第１給排流路と、
    前記シリンダの第１ポートと前記電磁切換弁との間を接続する第２給排流路と、
    前記第１給排流路上に設けられた第１流速調整部及び第１チェック弁と、
    前記第２給排流路上に設けられた第２流速調整部及び第２チェック弁と、
    前記第１給排流路から分岐して前記第２チェック弁のパイロットポートに接続される第１パイロット流路と、前記第２給排流路から分岐して前記第１チェック弁のパイロットポートに接続される第２パイロット流路とを具備する流体圧駆動システムにより駆動される様構成された蓋開閉機構。     A lid that covers a furnace port of a processing furnace that processes a substrate, a cylinder that operates the lid, and a lid opening and closing mechanism including an arm that couples and fixes the lid and the cylinder,
    A first supply / discharge flow path connecting between a second port of the cylinder and an electromagnetic switching valve;
    A second supply / drain passage connecting between a first port of the cylinder and the electromagnetic switching valve;
    A first flow rate adjusting unit and a first check valve provided on the first supply / discharge flow path;
    A second flow rate adjusting unit and a second check valve provided on the second supply / discharge flow path;
    A first pilot flow path branched from the first supply / discharge flow path and connected to a pilot port of the second check valve; and a first pilot flow path branched from the second supply / discharge flow path to a pilot port of the first check valve. A lid opening / closing mechanism configured to be driven by a fluid pressure driving system having a second pilot flow path connected thereto.
  9. 　前記蓋部は、前記流体圧駆動システム内に供給される作動流体の向きに応じて、待機位置と炉口位置との間を移動する様構成された請求項８に記載の蓋開閉機構。 The lid opening / closing mechanism according to claim 8, wherein the lid is configured to move between a standby position and a furnace port position in accordance with the direction of the working fluid supplied into the fluid pressure drive system.
  10. 　基板保持具を処理炉から搬出する工程は、
    該処理炉の炉口を覆う蓋部と、該蓋部を動作させるシリンダと、前記蓋部と前記シリンダとを連結固定するアームとを備えた蓋開閉機構で前記処理炉の炉口を閉塞する工程を更に有し、
    前記炉口を閉塞する工程では、前記シリンダの第２ポートと電磁切換弁との間を接続する第１給排流路と、前記シリンダの第１ポートと前記電磁切換弁との間を接続する第２給排流路と、前記第１給排流路上に設けられた第１流速調整部及び第１チェック弁と、前記第２給排流路上に設けられた第２流速調整部及び第２チェック弁と、前記第１給排流路から分岐して前記第２チェック弁のパイロットポートに接続される第１パイロット流路と、前記第２給排流路から分岐して前記第１チェック弁のパイロットポートに接続される第２パイロット流路とを具備する流体圧駆動システムにより前記蓋開閉機構が駆動される半導体装置の製造方法。     The step of unloading the substrate holder from the processing furnace includes:
    The furnace port of the processing furnace is closed by a lid opening / closing mechanism including a lid that covers the furnace port of the processing furnace, a cylinder that operates the lid, and an arm that connects and fixes the lid and the cylinder. Further comprising a step,
    In the step of closing the furnace port, a first supply / discharge flow path that connects between a second port of the cylinder and an electromagnetic switching valve, and a connection between a first port of the cylinder and the electromagnetic switching valve. A second flow path, a first flow rate adjusting section and a first check valve provided on the first flow path, a second flow rate adjusting section and a second flow rate section provided on the second flow path. A check valve, a first pilot flow path branched from the first supply / drain flow path and connected to a pilot port of the second check valve, and a first check valve branched from the second supply / drain flow path And a second pilot flow path connected to the pilot port of the semiconductor device.
  11. 　蓋部を駆動させるシリンダと、
    該シリンダの第２ポートと電磁切換弁との間を接続する第１給排流路と、
    前記シリンダの第１ポートと前記電磁切換弁との間を接続する第２給排流路と、
    前記第１給排流路上に設けられた第１流速調整部及び第１チェック弁と、
    前記第２給排流路上に設けられた第２流速調整部及び第２チェック弁と、
    前記第１給排流路から分岐して前記第２チェック弁のパイロットポートに接続された第１パイロット流路と、
    前記第２給排流路から分岐して前記第１チェック弁のパイロットポートに接続された第２パイロット流路とを具備する流体圧駆動システム。     A cylinder for driving the lid,
    A first supply / discharge flow path connecting between a second port of the cylinder and an electromagnetic switching valve;
    A second supply / drain passage connecting between a first port of the cylinder and the electromagnetic switching valve;
    A first flow rate adjusting unit and a first check valve provided on the first supply / discharge flow path;
    A second flow rate adjusting unit and a second check valve provided on the second supply / discharge flow path;
    A first pilot flow path branched from the first supply / discharge flow path and connected to a pilot port of the second check valve;
    A second pilot flow path branched from the second supply / discharge flow path and connected to a pilot port of the first check valve.
PCT/JP2019/033195 2018-09-19 2019-08-20 Substrate processing device, lid opening and closing mechanism, manufacturing method for semiconductor device, and fluid pressure drive system WO2020059427A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498675A (en) * 1972-05-29 1974-01-25
JPS6124804A (en) * 1984-07-16 1986-02-03 Nobutaka Ota Speed control device for pneumatic cylinder
WO2003085712A1 (en) * 2002-04-05 2003-10-16 Tokyo Electron Limited Vertical heat treating equipment
JP2018003943A (en) * 2016-06-30 2018-01-11 Ｋｙｂ株式会社 Cylinder driving device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498675A (en) * 1972-05-29 1974-01-25
JPS6124804A (en) * 1984-07-16 1986-02-03 Nobutaka Ota Speed control device for pneumatic cylinder
WO2003085712A1 (en) * 2002-04-05 2003-10-16 Tokyo Electron Limited Vertical heat treating equipment
JP2018003943A (en) * 2016-06-30 2018-01-11 Ｋｙｂ株式会社 Cylinder driving device

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