CN2692845Y - 高散热发光二极管 - Google Patents

高散热发光二极管 Download PDF

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CN2692845Y
CN2692845Y CNU2004200363204U CN200420036320U CN2692845Y CN 2692845 Y CN2692845 Y CN 2692845Y CN U2004200363204 U CNU2004200363204 U CN U2004200363204U CN 200420036320 U CN200420036320 U CN 200420036320U CN 2692845 Y CN2692845 Y CN 2692845Y
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led crystal
crystal particle
emitting diode
ground connection
pole plate
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张荣骞
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XIANGHU CO Ltd
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XIANGHU CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

一种高散热发光二极管,具有一平板状金属接地极板,该接地极板上具有锥状反光凹穴,该反光凹穴的穴底导热粘着至少一个发光二极管晶粒,于接地极板顶面周边绝缘压合至少两支金属导电引脚,该发光二极管晶粒顶面预设的接点以金属导线连接相对应的导电引脚,该导电引脚呈朝下弯折状,另于接地极板四周及导电引脚顶面设外护胶体,于外护胶体顶面相对于发光二极管晶粒正上方固设有透光的透光罩。本实用新型构造简单,且模具加工制造比较容易,成本低。

Description

高散热发光二极管
【技术领域】
本实用新型是关于一种高散热发光二极管,尤指一种可受控发光,且兼具高散热性能的发光二极管构装结构设计。
【背景技术】
在我们周遭环境,发光二极管(LED)的应用十分广泛,例如:音响、电视、有线电视选台器、电脑、传真机等电子产品的指示灯或频道数字显示,或是一般电话、无线电话等数据按键夜间显示的背光源,以及汽车上特别明亮、呈点状排列的第三煞车灯、户外显示的看板...等产品,都是发光二极管可应用的范围。
时下习知的发光二极管依其产品特性,其结构亦有所差异,如图3所示,即揭示一种具有高散热功能的表面粘着型发光二极管,由图中可以得知:该发光二极管具有一金属接地极板(20),该接地极板(20)顶面中央形成一凸出的承载座(21),该承载座(21)中间并形成一锥状反光凹穴(22),该接地极板(20)外侧设数支金属导电引脚(25),并于其外侧模塑成型一外护胶体(26),导电引脚(25)伸出外护胶体(26)外侧,并与接地极板(20)间为胶体予以绝缘,接地极板(20)底面以及导电引脚(25)的内外侧端分别显露于外护胶体(26)外侧,又,该接地极板(20)于其反光凹穴(22)的穴底平面上粘着发光二极管晶粒(23),该发光二极管晶粒(23)顶面的接点以金属导线(24)连接相对应的导电引脚(25)内端部,又于外护胶体(26)顶面相对于发光二极管晶粒(23)正上方设有透光材料的透光罩(27),而构成一发光二极管。
该发光二极管可以其导电引脚(25)作外部连接,使其可受控令其内部的发光二极管晶粒(23)发光,而发光二极管晶粒(23)工作时产生的热则可经由底部的接地极板(20)传导发散,使其具备高散热的效能。
前揭高散热发光二极管的设计,虽提供一项兼具发光及高散热特点,但是该发光二极管中,其接地极板需形成阶层状,让周边的导电引脚搭载于该接地极板的肩部上,以致构造形状较为复杂,相对的,用以塑造成型外护胶体的模具形状也较复杂,造成模具加工制造困难度较高,而有成本偏高的问题。
【实用新型内容】
本实用新型的目的在于提供一种高散热发光二极管,模具加工制造比较容易,成本低,用以解决习用高散热发光二极管模具制作困难、成本高的问题。
为达成前揭目的,本实用新型所提出的技术方案是:一种高散热发光二极管,其特征在于:其具有一平板状金属接地极板,该接地极板上具有锥状反光凹穴,该反光凹穴的穴底导热粘着至少一个发光二极管晶粒,于接地极板顶面周边绝缘压合至少两支金属导电引脚,该发光二极管晶粒顶面预设的接点以金属导线连接相对应的导电引脚,该导电引脚呈朝下弯折状,另于接地极板四周及导电引脚顶面设外护胶体,于外护胶体顶面相对于发光二极管晶粒正上方固设有透光的透光罩。
所述的高散热发光二极管还可具有下述附加的技术特征:
该发光二极管于透光罩内侧可设有包覆发光二极管晶粒及金属导线的透明胶。
该接地极板的反光凹穴中可设单一颗发光二极管晶粒,也可设多颗同一色光的发光二极管晶粒。
该接地极板的反光凹穴中也可设有多颗不同色光的发光二极管晶粒,该包覆于该发光二极管晶粒上的透明胶体中含有光扩散剂。
本实用新型以前揭技术方案将可达成的功效是:本实用新型以精简单纯化的构造,可使成型外护胶体的成型模具形状简单,以利模具的制造及降低成本。
【附图说明】
图1是本实用新型的剖面示意图。
图2是本实用新型于发光二极管晶粒上设透明胶体实施例的剖面示意图。
图3是习用高散热发光二极管的剖面示意图。
【具体实施方式】
有关本实用新型高散热发光二极管的具体实施例,请配合参阅图1所示,其主要具有一可导电导热的金属材料制成的平板状接地极板(10),该接地极板(10)上形成锥状的反光凹穴(101),并于该反光凹穴(101)的穴底平面上导热粘着一个(含)以上具有发光功能的发光二极管晶粒(11),于接地极板(10)顶面周边绝缘压合二支(含)以上金属导电引脚(12),其中导电引脚(12)与接地极板(10)间具有绝缘胶(121),该发光二极管晶粒(11)顶面预设的接点分别以金属导线(111)  电性连接对应的导电引脚(12),该导电引脚(12)形成朝下弯折状,下端部与接地极板(10)平齐,使其可以表面粘着技术作外部连接的用,另于接地极板(10)四周及导电引脚(12)顶面预定的区域设外护胶体(13),于外护胶体(13)顶面相对于发光二极管晶粒(11)正上方以粘胶固设一透光材质制成的透光罩(14),而构成一发光二极管。
如图2所示,前述中,该发光二极管于透光罩(14)内侧设有一包覆发光二极管晶粒(11)及金属导线(111)的透明胶体(15),用以进一步将发光二极管晶粒(11)固着于接地极板(10)上,并作为保护发光二极管晶粒(11)之用。
前述中,该发光二极管中可于其接地极板(10)上的反光凹穴(101)中可设单一颗或多颗同一色光的发光二极管晶粒(11),用以受控发出该预定的色光,或者,该发光二极管中可设多颗不同色光的发光二极管晶粒(11),且令包覆于该发光二极管晶粒(11)上的透明胶体(15)中含有光扩散剂,使该多种不同色光通过该含有光扩散剂的透明胶体(15),而均匀混光成预定的色光投射于外。
本实用新型的发光二极管,可以表面粘着技术令其各导电引脚(12)焊接于电路板上或其它电子装置作外部连接,其接地极板(10)连接接地线路,使该发光二极管可受控令其发光二极管晶粒(11)发光,该发光二极管晶粒(11)工作所产生的热,则可直接透过接地极板(10)热传导至外界散热。
又本实用新型的前揭高散热发光二极管结构,主要是令其各部分组成构造的形状简单化,尤其是接地极板,仅需令其顶面形成反光凹穴即可,免除习知发光二极管接地极板需形成多阶级状的空间型态,造成胶体成型模具形状复杂及模具成本高的缺点。
另一方面,本实用新型的结构设计,可令数个接地极板以阵列状一体成型于一基材上,令相对于接地极板数量的导电引脚组以阵列状成型成另一基材上,再以绝缘压合手段令该二基材对位压合一体,使各导电引脚分别绝缘固接于对应的接地极板,即进行粘着发光二极管晶粒、金属导线的打线接合、封胶、封固透光罩、导电引脚的切割成型等步骤,使该发光二极管的构装制造更为简便,大幅缩减制造成本。
综上所述,本实用新型以其创新技术方案,确可提供一项优于习用高散热发光二极管的实用设计。

Claims (5)

1.一种高散热发光二极管,其特征在于:其具有一平板状金属接地极板,该接地极板上具有锥状反光凹穴,该反光凹穴的穴底导热粘着至少一个发光二极管晶粒,于接地极板顶面周边绝缘压合至少两支金属导电引脚,该发光二极管晶粒顶面预设的接点以金属导线连接相对应的导电引脚,该导电引脚呈朝下弯折状,另于接地极板四周及导电引脚顶面设外护胶体,于外护胶体顶面相对于发光二极管晶粒正上方固设有透光的透光罩。
2.如权利要求1所述的高散热发光二极管,其特征在于:该发光二极管于透光罩内侧设有包覆发光二极管晶粒及金属导线的透明胶。
3.如权利要求1或2所述的高散热发光二极管,其特征在于:该接地极板的反光凹穴中设单一颗发光二极管晶粒。
4.如权利要求1或2所述的高散热发光二极管,其特征在于:该接地极板的反光凹穴中设有多颗同一色光的发光二极管晶粒。
5.如权利要求2所述的高散热发光二极管,其特征在于:该接地极板的反光凹穴中设有多颗不同色光的发光二极管晶粒,该包覆于该发光二极管晶粒上的透明胶体中含有光扩散剂。
CNU2004200363204U 2004-04-02 2004-04-02 高散热发光二极管 Expired - Fee Related CN2692845Y (zh)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332802B2 (en) 2004-06-22 2008-02-19 Kabushiki Kaisha Toshiba Package for semiconductor light emitting element and semiconductor light emitting device
CN101145592B (zh) * 2006-09-13 2010-09-29 佰鸿工业股份有限公司 高散热性发光二极管装置
CN102456815A (zh) * 2010-11-01 2012-05-16 欣祥企业股份有限公司 全周光发光二极管模块
CN101996985B (zh) * 2009-08-13 2012-07-18 柏友照明科技股份有限公司 可定位导热粘着材料的发光二极管封装结构及其制作方法
CN102683545A (zh) * 2011-03-16 2012-09-19 隆达电子股份有限公司 提升散热效率的光源模块及其嵌入式封装结构
US8445928B2 (en) 2009-02-18 2013-05-21 Chi Mei Lighting Technology Corp. Light-emitting diode light source module
WO2019047007A1 (zh) * 2017-09-05 2019-03-14 深圳前海小有技术有限公司 半导体元件的封装结构

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332802B2 (en) 2004-06-22 2008-02-19 Kabushiki Kaisha Toshiba Package for semiconductor light emitting element and semiconductor light emitting device
CN100423304C (zh) * 2004-06-22 2008-10-01 株式会社东芝 半导体发光元件的封装和半导体发光器件
CN101145592B (zh) * 2006-09-13 2010-09-29 佰鸿工业股份有限公司 高散热性发光二极管装置
US8445928B2 (en) 2009-02-18 2013-05-21 Chi Mei Lighting Technology Corp. Light-emitting diode light source module
CN101996985B (zh) * 2009-08-13 2012-07-18 柏友照明科技股份有限公司 可定位导热粘着材料的发光二极管封装结构及其制作方法
CN102456815A (zh) * 2010-11-01 2012-05-16 欣祥企业股份有限公司 全周光发光二极管模块
CN102683545A (zh) * 2011-03-16 2012-09-19 隆达电子股份有限公司 提升散热效率的光源模块及其嵌入式封装结构
WO2019047007A1 (zh) * 2017-09-05 2019-03-14 深圳前海小有技术有限公司 半导体元件的封装结构

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