CN2645377Y - Thin type photographic module - Google Patents
Thin type photographic module Download PDFInfo
- Publication number
- CN2645377Y CN2645377Y CNU032084609U CN03208460U CN2645377Y CN 2645377 Y CN2645377 Y CN 2645377Y CN U032084609 U CNU032084609 U CN U032084609U CN 03208460 U CN03208460 U CN 03208460U CN 2645377 Y CN2645377 Y CN 2645377Y
- Authority
- CN
- China
- Prior art keywords
- image sensing
- slim
- camera lens
- photography module
- sensing wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
A thin type photographic module comprises a fixing board, an image sensing semi-conductor assembly and a camera lens base; wherein, the image sensing semi-conductor assembly is made by Chip on Film technology; the chip for sensing image is connected to a film of COF circuit, and the light sensing face of the image sensing chip corresponds to the window of the film of COF circuit and is aligned to the light channel of the camera lens base which is combined on the fixing board to form a concealed space. The image sensing chip is stably positioned in the concealed space for receiving optics image signal. The utility model is of a thin structure, and is accordance with the trend that electronic elements are thin, short, small and light.
Description
Technical field
The utility model is relevant for a kind of photography module, particularly includes to cover the slim photography module of the image sensing semiconductor subassembly that brilliant thin-film package makes relevant for a kind of.
Background technology
The utilization field of photography module is quite extensive at present, as numerical digit camera, picture telephone, cell phone system and video conference or the like, it is that (wherein a kind of common wafer is the complementary metal oxide semiconductor with an image sensing semiconductor wafer, CMOS) be packaged in the Optical devices, with sensing acquisition optical image signal, and convert the optical image signal to electric signal and be passed to circuit substrate, make the identification in addition of optical image signal, processing or storage.
The Taiwan patent gazette is announced in No. 492593 " CCD and CMOS image capture module append one ", its Prior Art discloses a kind of known CCD image capture module, its Image Sensor that comprises is electrically connected to a circuit substrate, and on this circuit substrate in conjunction with a lens mount, this lens mount is covered with this Image Sensor of sealing, owing to be formed with the required modular circuit of CCD image capture module on this circuit substrate, must keep being electrically conducted with this Image Sensor, so the manufacture process of this CCD image capture module must electrically be bonded to this Image Sensor this circuit substrate (as in modes such as surface engagement) earlier, secure bond lens mount and circuit substrate again, the known CCD image capture of this kind modular structure is easy to generate the bit errors of lens mount and Image Sensor, cause the image capture angular deviation of image induction element, therefore, for make lens mount get lens barrel can with the precisely contraposition of the bimorph crystal (being wafer) of Image Sensor, the improvement that other this patent case also discloses a kind of CCD and CMOS image capture module, its structure and manufacture method and above-mentioned known CCD image capture module are roughly the same, different is that this lens mount is incorporated into this Image Sensor (CMOS, CCD) packaging body upper limb, and this lens mount attaches and is closed in around the apical margin of image sensing element packaging body, make the tube of finding a view of this lens mount can be corresponding to the bimorph crystal of this Image Sensor top, yet, because of this lens mount is incorporated on this Image Sensor, Image Sensor must carry the weight of whole lens mount, very easily influences the steadiness that electrically combines between this Image Sensor and circuit substrate.
Announce in No. 372079 " modular structure of electronic photography camera lens " at the Taiwan patent gazette in addition; disclose a kind of modular electronic photography camera lens; include a camera lens pedestal and a light sensation module; wherein the one side of this camera lens pedestal is provided with a hollow convex column; this projection is pivoted with the lens barrel of a scalable length; the another side of this camera lens pedestal then is provided with a storage tank that connects with projection; this light sensation module is placed in this storage tank; it is by a filter; one substrate and optics sensing wafer encapsulation form; wherein this substrate is being provided with a through hole with projection perforation corresponding position; so that this filter to be set; the photographic department of this optics sensing wafer corresponds to this through hole and this projection mutually; and the signal lead of this substrate contacts the contact of this optics sensing wafer; when the pin (pin) of those signal lead one ends is electrically connected to a relevant telecommunication circuit element; can begin pick-up image; yet this light sensation module is packaged with a filter; an one hard substrate and an optics sensing wafer; wherein this optics sensing wafer exposes to the bottom of light sensation module; protectiveness to the optics sensing wafer is relatively poor; and the thickness of this light sensation module includes this filter; the thickness of hard substrate and optics sensing wafer; need to consider the length of hard base plate bottom pin in addition, make that the integral thickness of this electronic photography camera lens is bigger.
Summary of the invention
Main purpose of the present utility model is to provide a kind of slim photography module, the image sensing semiconductor subassembly that it comprises is to make with the membrane of flip chip encapsulation, thinner thickness, and on fixed head, can be formed with groove in addition, with ccontaining image sensing wafer and reach the thinner photography module of thickness, make the photography module meet the compact trend demand of electronic component now.
Of the present utility model time a purpose is to provide a kind of slim photography module, the image sensing semiconductor subassembly that it comprises is to make with the membrane of flip chip encapsulation, the image sensing wafer chip bonding is to COF (Chip-On-Film: the membrane of flip chip encapsulation) on the circuit film, it is good electrically to engage reliability, and in a COF winding, can make in a large number continuously and produce a plurality of image sensing semiconductor subassemblies, to reduce the manufacturing cost of photography module.
A purpose more of the present utility model is to provide a kind of slim photography module, the COF circuit film of the image sensing semiconductor subassembly that it comprises can provide the circuit design of whole photography module, with the modular circuit of integrating the photography module in the image sensing semiconductor subassembly, so do not need to make extra circuit substrate, can be formed directly in the signal I/O end of this photography module by this COF circuit film with modular circuit, make the image sensing semiconductor subassembly be formed with complete modular circuit, can combine with fixed head or camera lens pedestal individually, make slim photography module have optionally elastification manufacture process.
Slim photography module of the present utility model, include a fixed head, an one image sensing semiconductor subassembly and a camera lens pedestal, wherein this image sensing semiconductor subassembly includes a COF (Chip-On-Film: the membrane of flip chip encapsulation) circuit film and an image sensing wafer, the window periphery of this COF circuit film is provided with a plurality of abutting ends for chip bonding, those abutting ends are attached at a surface of this COF circuit film, the photosurface periphery of this image sensing wafer is formed with a plurality of chip-covered boss, this image sensing wafer corresponds to this window mode chip bonding to this COF circuit film with its photosurface, with electrical those chip-covered boss and those abutting ends that engages correspondence, preferably, this COF circuit film is formed with modular circuit, for connecting the required electronic component of this slim photography module, this camera lens pedestal is incorporated into this fixed head and constitutes a confined space, and this image sensing wafer is positioned in this confined space, this image sensing wafer is provided with to this light transmission passage with its photosurface contraposition, for acquisition optical image signal.
According to said structure, the utility model thinner thickness makes the photography module can meet the compact trend demand of electronic component now.It is good electrically to engage reliability, and can make in a large number continuously in a COF winding and produce a plurality of image sensing semiconductor subassemblies, can reduce the manufacturing cost of photography module.Do not need to make extra circuit substrate, the COF circuit film can be formed directly in the signal I/O end of this photography module, make the image sensing semiconductor subassembly be formed with complete modular circuit, can combine with fixed head or camera lens pedestal individually, make slim photography module have optionally elastification manufacture process.
Description of drawings
Fig. 1 is the sectional view of the slim photography module of the utility model first specific embodiment.
Fig. 2 is installed in the sectional view of the image sensing semiconductor subassembly in this slim photography module for the utility model first specific embodiment.
Fig. 3 is the fabrication process flow figure of the slim photography module of the utility model first specific embodiment.
Fig. 4 is the sectional view of the slim photography module of the utility model second specific embodiment.
Fig. 5 is installed in the sectional view of the image sensing semiconductor subassembly in this slim photography module for the utility model second specific embodiment.
The figure number explanation
11...... a COF winding is provided
12...... make the image sensing semiconductor subassembly by this COF winding
13...... in conjunction with this image sensing semiconductor subassembly to a fixed head
14...... in conjunction with a camera lens pedestal to this fixed head
100...... slim photography module 110...... fixed head 111...... groove
112...... adhesion layer 120...... camera lens pedestal 121...... light transmission passage
122...... joint portion 123...... filter 131......COF circuit film
130...... image sensing semiconductor subassembly 131a...... first surface
131b...... first surface 132...... window 133...... abutting end
134...... image sensing wafer 135...... photosurface 136...... chip-covered boss
137...... protection glue-line 138...... modular circuit 140...... camera lens
141...... lens 151...... electronic component 152...... joint
200...... photography module 210...... fixed head 211...... adhesion layer
220...... camera lens pedestal 221...... light transmission passage 222...... joint portion
223...... filter 230...... image sensing semiconductor subassembly
231......COF circuit film 231a...... first surface 231b...... second surface
232...... window 233...... abutting end 234...... image sensing wafer
235...... photosurface 236...... chip-covered boss 237...... protects glue-line
238...... modular circuit 239...... is electrically conducted hole 240...... camera lens
241...... lens 251...... electronic component 252...... joint
Embodiment
See also appended graphicly, the utility model will be enumerated following examples and describe:
First specific embodiment of the present utility model, as shown in Figure 1, one slim photography module 100 includes a fixed head 110, an one camera lens pedestal 120 and an image sensing semiconductor subassembly 130, wherein this fixed head 110 is one not have the hard substrate of electrical transfer function, as glass fibre substrate (BT/FR4substrate), ceramic substrate (ceramic substrate) or metallic plate (metal plate) or the like, be to establish mode in conjunction with this camera lens pedestal 120 on this fixed head 110 with spiral shell, make and constitute a confined space between camera lens pedestal 120 and the fixed head 110, and this image sensing semiconductor subassembly 130 of strong fix, this camera lens pedestal 120 has a light transmission passage 121, the opening of this light transmission passage 121 is formed with a joint portion 122, as internal thread, in order in conjunction with a camera lens 140, this camera lens 140 generally is tubular and has lens 141, known ground, these camera lens 140 fixable types or adjustment type are incorporated into this camera lens pedestal 120, and the camera lens 140 scalable adjustment of wherein adjustment type combination are beneficial to capture image clearly.
As Fig. 1, shown in 2, this image sensing semiconductor subassembly 130 includes membrane of flip chip encapsulation (ChipOn film, COF) circuit film 131 (hereinafter to be referred as the COF circuit film) and an image sensing wafer 134, wherein this COF circuit film 131 has flexibility, its material is Polyimide (Polyimide, PI) or polyester (polyester, PET) or the like, this COF circuit film 131 has a first surface 131a, an one second surface 131b and a window 132, this window 132 runs through this first surface 131a and second surface 131b, in the present embodiment, the metallic circuit of this COF circuit film 131 is formed at first surface 131a, these metallic circuits have a plurality of abutting ends 133 of being located at these window 132 peripheries, and those abutting ends 133 are attached at the first surface 131a of this COF circuit film 131, known ground, this image sensing wafer 134 is a kind of light sensing wafer (optical sensing chip), charge coupled device (charge coupleddevice, CCD), complementary metal oxide semiconductor (complementary metal oxidesemiconductor, CMOS) or photoelectricity diode (photodiode) or the like, this image sensing wafer 134 has a photosurface 135, these photosurface 135 peripheries are formed with a plurality of chip-covered boss 136, as golden projection (Au bump), with signal output end as image sensing wafer 134.This image sensing wafer 134 corresponds to these window 132 mode chip bondings to COF circuit film 131 with its photosurface 135; with electrical those chip-covered boss 136 and those abutting ends 133 that engage correspondence; preferably; window 132 peripheries at this COF circuit film 131 are formed with a protection glue-line 137; as anisotropic conductive adhesive layer (anisotropic conductive film; ACF); non-conductive thermosetting glue-line (Non-ConductiveFilm; NCF) or the UV viscose; thermosetting colloid that thermosetting filler etc. are formed by the liquid state coating or the like; this protection glue-line 137 coats the chip-covered boss 136 of this image sensing wafer 134; with firm this image sensing semiconductor subassembly 130, and promote abutting end 133 and the chip-covered boss 136 electrical reliabilitys that engage.
These image sensing semiconductor subassembly 130 strong fixs are in the confined space that this camera lens pedestal 120 and this fixed head 110 are constituted, in case of necessity, the state or the passive state gas of filling low humidity can be evacuated in this confined space, as nitrogen or argon gas, influence image sensing wafer 134 acquisition optical image signals with the intrusion that prevents water gas, in the present embodiment, this fixed head 110 is formed with a groove 111, the bottom surface of this image sensing wafer 134 is cemented in groove 111 with an adhesion layer 112 (as viscose or adhesive tape etc.), in the time of in this image sensing wafer 134 is placed in this groove 111, this groove 111 can be assisted the location of this image sensing wafer 134, make the light transmission passage 121 of its photosurface 135 contrapositions to this camera lens pedestal 120, and preferably, this camera lens pedestal 120 is equiped with a filter 123 (filter), its also contraposition to this light transmission passage 121, with photosurface 135 corresponding to this image sensing wafer 134, (infrared is IR) in case produce make an uproar news or false colour in order to the filtering infrared ray for this filter 123.In addition, in the present embodiment, include modular circuit 138 on this COF circuit film 131, this modular circuit 138 is formed at this COF circuit film 131 and extends to the surface that is not covered by camera lens pedestal 120 on this fixed head 110, this modular circuit 138 is electrically connected with at least one electronic component 151, as resistance, passive device such as electric capacity or inductance (Passivecomponent) or active member (active component), and be combined with a joint 152 at COF circuit film 131 1 ends that are formed with modular circuit 138, as the signal I/O end of whole slim photography module 100, for being electrically connected to an external circuit elements.
The image sensing semiconductor subassembly 130 that slim photography module 100 of the present utility model is comprised is to form with the membrane of flip chip encapsulation, thinner thickness, with low cost and can produce for coil type is continuously a large amount of, and can reduce the manufacturing cost of slim photography module 100, and this image sensing wafer 134 is that chip bonding is to COF circuit film 131, a plurality of abutting ends 133 for chip bonding of this COF circuit film 131 are located at window 132 peripheries and are attached at first surface 131a, make the image sensing wafer 134 of chip bonding more firm, and on fixed head 110, be formed with groove 111 in addition, with ccontaining image sensing wafer 134 and reach the thinner slim photography module 100 of thickness, make slim photography module 100 meet the compact trend demand of electronic component now, in addition, in the present embodiment, the COF circuit film 131 of this image sensing semiconductor subassembly 130 can provide the circuit design of whole slim photography module 100, with the modular circuit 138 of integrating this slim photography module 100 in image sensing semiconductor subassembly 130, and directly be formed with the signal I/O end of slim photography module 100 at this COF circuit film 131, so do not need to make extra circuit substrate, and COF circuit film 131 flexibility that are formed with modular circuit 138 are good and can expose to camera lens pedestal 120, so for the slim photography module 100 elastification manufacturing process in membrane of flip chip encapsulation back, be that image sensing semiconductor subassembly 130 can be incorporated into fixed head 110 or camera lens pedestal 120 (promptly to camera lens pedestal 120 or fixed head 110 location) according to need in advance, this image sensing semiconductor subassembly 130 can keep the non-relation that is electrically conducted with this fixed head 110, to reach the effect that the elastification manufacturing is produced.
According to the utility model, wherein a kind of feasible manufacturing process of above-mentioned slim photography module 100 as shown in Figure 3, details are as follows for the process steps of this slim photography module 100:
At first, in the step of " a COF winding is provided " 11, provide a COF winding, it can furl in a rolling wheel (reel), this COF winding includes a plurality of integrated above-mentioned COF circuit films 131, and the first surface 131a of each COF circuit film 131 is formed with a plurality of metallic circuits, and those metallic circuits have the abutting end 133 of being located at window 132 peripheries, those abutting ends 133 are attached at this first surface 131a, and those metallic circuits and modular circuit 138 are connected to preferable.
Then, in the step of " making the image sensing semiconductor subassembly " 12 by this COF winding, this image sensing semiconductor subassembly 130 is to make with the membrane of flip chip encapsulation, photosurface 135 peripheries of at least one image sensing wafer 134 that provides are formed with a plurality of chip-covered boss 136, conductive projection (non-reflowable conductive bump) as non-reflows such as gold, copper, aluminium or its alloys, in the present embodiment, those chip-covered boss 136 are preferable with golden projection, for chip bonding to the COF winding.
Then; this image sensing wafer 134 of chip bonding is to this COF winding; preferably before carrying out chip bonding; window 132 peripheries at COF circuit film 131 are pre-formed a protection glue-line 137; as anisotropic conductive adhesive layer or non-conductive thermosetting glue-line etc.; again with the photosurface 135 of this image sensing wafer 134 down corresponding to this window 132; and the first surface 131a of this COF circuit film 131 up; with chip bonding image sensing wafer 134 to COF circuit films 131; when this protection glue-line 137 is selected anisotropic conductive adhesive layer for use; those chip-covered boss 136 can optionally be engaged in those abutting ends 133 fully; it utilizes the conducting particles of anisotropic conductive adhesive layer inside can make chip-covered boss 136 vertical electrotropism conductings to corresponding engagement end 133; and should coat those chip-covered boss 136 by protection glue-line 137; to protect those chip-covered boss 136 and to promote the reliability that electrically engages; preferably; those electronic components 151 can be electrically connected on the modular circuit 138 of this flexible circuit base board 131 in addition; modular circuit 138 is integrated in this image sensing semiconductor subassembly 130; form a plurality of image sensing semiconductor subassemblies 130 so in a COF winding, can encapsulate continuously; mode such as cut apart and get a wherein image sensing semiconductor subassembly 130 via cutting, for the successive process of slim photography module 100.
Afterwards, in the step of " in conjunction with this image sensing semiconductor subassembly to a fixed head " 13, this fixed head 110 is formed with a groove 111, be pre-formed an adhesion layer 112 in this groove 111, with cemented ccontaining image sensing wafer 134, and the location of auxiliary this image sensing wafer 134, make image sensing wafer 134 more steady, and have a stable image capture angle, a thinner module kenel is provided simultaneously.
At last, in the step of " in conjunction with a camera lens pedestal to this fixed head " 14, this camera lens pedestal 120 with spiral shell if alternate manner be incorporated on this fixed head 110, to constitute a confined space, and this image sensing wafer 134 is located in this confined space, with isolated extraneous dust pollution image sensing wafer 134, wherein this camera lens pedestal 120 has a light transmission passage 121, the opening part of this light transmission passage 121 is combined with a camera lens 140, and preferably, this camera lens pedestal 120 is equiped with a filter 123, its contraposition is to this light transmission passage 121, so photosurface 135 of this image sensing wafer 134, the filter 123 of camera lens pedestal 120 and the lens 141 of camera lens 140 all are formed at this light transmission passage 121, are preferably to be parallel corresponding relation mutually, are beneficial to capture the optical image signal.Therefore in the manufacture process of above-mentioned slim photography module 100, this image sensing semiconductor subassembly 130 is positioned this fixed head 110, add the assist location of the groove 111 of fixed head 110, make the photosurface 135 of this image sensing wafer 134 can correspond to filter 123 and lens 141, make the location of image sensing wafer 134 not have error and the image capture angle can not produce deviation, can capture the optical image signal more accurately.
According to second specific embodiment of the present utility model, as shown in Figure 4, one slim photography module 200 includes a fixed head 210, an one camera lens pedestal 220 and an image sensing semiconductor subassembly 230, wherein this fixed head 210 is the hard substrate of electric property transfer function not, on this fixed head 210 in conjunction with camera lens pedestal 220, to constitute a confined space, and the light transmission passage 221 of this camera lens pedestal 220 is formed with a joint portion 222, in order in conjunction with a camera lens 240, these image sensing semiconductor subassembly 230 strong fixs are in this confined space, it includes a COF circuit film 231 and an image sensing wafer 234, this COF circuit film 231 has one and runs through first surface 231a, the window 232 of second surface 231b and at least one hole 239 that is electrically conducted, in the present embodiment, the metallic circuit of this COF circuit film 231 is formed at this second surface 231b, and the hole 239 that is electrically conducted via COF circuit film 231 is connected to abutting end 233 in first surface 231a, those abutting ends 233 are located at the periphery of this window 232 and are attached at this first surface 231a, photosurface 235 peripheries of this image sensing wafer 234 are formed with a plurality of chip-covered boss 236, in the present embodiment, those chip-covered boss 236 Solder Bumps (solder bump) that is the tool reflow.See also Fig. 5; when forming this image sensing semiconductor subassembly 230; the photosurface 235 of this image sensing wafer 234 is down corresponding to the window 232 of this COF circuit film 231; and the first surface 231a of this COF circuit film 231 up; and this image sensing wafer 234 of chip bonding is to this COF circuit film 231; make those chip-covered boss 236 electrically be engaged to those abutting ends 233; preferably; after carrying out chip bonding; window 232 peripheries at this COF circuit film 231 form a protection glue-line 237; in the present embodiment; this protection glue-line 237 is the UV viscose; thermosetting filler or cover brilliant bottom and fill material (underfilling material) and wait and be coated with the thermosetting colloid (is good with the light transmission colloid) that forms by liquid state; this protecting colloid 237 utilizes capillarity to spread photosurface 235 peripheries to this image sensing wafer 234; and do not cover the central part (being sensing region) of this photosurface 235; this protecting colloid 237 coats those chip-covered boss 236; with firm this image sensing semiconductor subassembly 230, and promote abutting end 233 and the chip-covered boss 236 electrical reliabilitys that engage.
In the present embodiment, the bottom surface of this image sensing wafer 234 is through grinding (grinding), and have thin thickness to provide a thinner module kenel and to have good level face corresponding to photosurface 235, when this image sensing semiconductor subassembly 230 is positioned confined space that this camera lens pedestal 220 and this fixed head 210 constituted, preferably, bottom surface and this fixed head 210 at image sensing wafer 234 are formed with an adhesion layer 211 (as viscose or adhesive tape etc.), so that image sensing wafer 234 glutinous being located on this fixed head 210, this image sensing wafer 234 is more steady and have a stable image capture angle, and photosurface 235 contrapositions of this image sensing wafer 234 are to the light transmission passage 221 of this camera lens pedestal 220, preferably, this camera lens pedestal 220 is equiped with a filter 223 (filter), its also contraposition to this light transmission passage 221, with photosurface 235, make the photosurface 235 parallel filter 223 of this camera lens pedestal 220 and the lens 241 of this camera lens 240 of corresponding to of image sensing wafer 234 corresponding to this image sensing wafer 234.In addition, in the present embodiment, the metallic circuit of this COF circuit film 231 includes modular circuit 238, with the modular circuit 238 of integrating this photography module 200 in image sensing semiconductor subassembly 230, this modular circuit 238 extends to the surface that is not covered by camera lens pedestal 220 of this fixed head 210, for electrically connecting at least one electronic building brick 251, and be combined with a joint 252 at COF circuit film 231 1 ends that are formed with modular circuit 238, with signal I/O end as whole photography module 200.
Therefore, photography module 200 of the present utility model has thin thickness, the image sensing semiconductor subassembly 230 that it comprises can be produced for a large amount of continuously encapsulation of COF coil type, cheap for manufacturing cost, and these photography module 200 required modular circuits 238 are integrated in image sensing semiconductor subassembly 230, so do not need to make extra circuit substrate, and COF circuit film 231 flexibility that are formed with modular circuit 238 are good and can expose to camera lens pedestal 220, in manufacture process, can be incorporated into camera lens pedestal 220 or fixed head 210 according to need in advance, and the elastification manufacturing process of membrane of flip chip encapsulation back photography module 200 can be provided.
The content that the claim of ought looking protection range of the present utility model defines is as the criterion, any personage who knows this skill, and any variation and the modification done in not breaking away from spirit and scope of the present utility model all belong to protection range of the present utility model.
Claims (10)
1, a kind of slim photography module is characterized in that, includes:
One fixed head;
One image sensing semiconductor subassembly, include a membrane of flip chip encapsulated circuit film and an image sensing wafer, wherein this membrane of flip chip encapsulated circuit film is formed with a window and a plurality of abutting end of being located at this window periphery, those abutting ends are attached at a surface of this membrane of flip chip encapsulated circuit film, this image sensing wafer has a photosurface and a plurality of chip-covered boss that is formed at this photosurface periphery, this image sensing wafer corresponds to this window mode chip bonding to this membrane of flip chip encapsulated circuit film, with those chip-covered boss of electrical joint and those abutting ends with its photosurface;
An and camera lens pedestal, in order in conjunction with a camera lens, this camera lens pedestal is incorporated into this fixed head and constitutes a confined space, and this image sensing wafer is positioned in this confined space, wherein this camera lens pedestal has a light transmission passage, and this image sensing wafer is provided with to this light transmission passage with its photosurface contraposition, for acquisition optical image signal.
2, slim photography module according to claim 1 is characterized in that, includes at least one electronic component, and it is located at this membrane of flip chip encapsulated circuit film.
3, slim photography module according to claim 2 is characterized in that, this membrane of flip chip encapsulated circuit film is formed with a modular circuit, to electrically connect this electronic component.
4, slim photography module according to claim 3 is characterized in that, this modular circuit extends to the surface that this fixed head is not covered by this camera lens pedestal.
5, slim photography module according to claim 1 is characterized in that, the window periphery of this membrane of flip chip encapsulated circuit film is formed with a protection glue-line, to coat the chip-covered boss of this image sensing wafer.
6, slim photography module according to claim 5 is characterized in that, this protection glue-line is to be selected from anisotropic conductive adhesive layer and non-conductive thermosetting glue-line.
7, slim photography module according to claim 1 is characterized in that, this membrane of flip chip encapsulated circuit film has at least one hole that is electrically conducted, and itself and those abutting end electrically connects.
8, slim photography module according to claim 1 is characterized in that, this camera lens pedestal is equiped with a filter, and this filter contraposition is to this light transmission passage.
9, slim photography module according to claim 1 is characterized in that this fixed head is formed with a groove, with auxiliary this image sensing wafer location.
10, slim photography module according to claim 1 is characterized in that, this confined space is vacuum state or is filled with passive state gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032084609U CN2645377Y (en) | 2003-08-27 | 2003-08-27 | Thin type photographic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032084609U CN2645377Y (en) | 2003-08-27 | 2003-08-27 | Thin type photographic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2645377Y true CN2645377Y (en) | 2004-09-29 |
Family
ID=34288662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032084609U Expired - Lifetime CN2645377Y (en) | 2003-08-27 | 2003-08-27 | Thin type photographic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2645377Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405111C (en) * | 2005-03-23 | 2008-07-23 | 三星电子株式会社 | Camera lens module |
| CN102025899A (en) * | 2009-09-11 | 2011-04-20 | 鸿富锦精密工业（深圳）有限公司 | Camera module and assembling method thereof |
| CN109451224A (en) * | 2018-11-29 | 2019-03-08 | 深圳市灵科科技有限公司 | A kind of video and audio meeting camera |
| CN110941073A (en) * | 2018-09-21 | 2020-03-31 | 先进光电科技股份有限公司 | Optical imaging module |
| CN110941071A (en) * | 2018-09-21 | 2020-03-31 | 先进光电科技股份有限公司 | Optical imaging module |
| CN114731358A (en) * | 2019-10-21 | 2022-07-08 | 宁波舜宇光电信息有限公司 | Circuit board assembly, photosensitive assembly, camera module and preparation methods of circuit board assembly and photosensitive assembly |
-
2003
- 2003-08-27 CN CNU032084609U patent/CN2645377Y/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405111C (en) * | 2005-03-23 | 2008-07-23 | 三星电子株式会社 | Camera lens module |
| CN102025899A (en) * | 2009-09-11 | 2011-04-20 | 鸿富锦精密工业（深圳）有限公司 | Camera module and assembling method thereof |
| CN102025899B (en) * | 2009-09-11 | 2013-11-06 | 鸿富锦精密工业（深圳）有限公司 | Camera module and assembling method thereof |
| CN110941073A (en) * | 2018-09-21 | 2020-03-31 | 先进光电科技股份有限公司 | Optical imaging module |
| CN110941071A (en) * | 2018-09-21 | 2020-03-31 | 先进光电科技股份有限公司 | Optical imaging module |
| TWI768127B (en) * | 2018-09-21 | 2022-06-21 | 先進光電科技股份有限公司 | Optical image capturing module, optical image system and optical image capturing manufacture method |
| TWI768128B (en) * | 2018-09-21 | 2022-06-21 | 先進光電科技股份有限公司 | Optical image capturing module and imaging system, manufacture method thereof |
| CN109451224A (en) * | 2018-11-29 | 2019-03-08 | 深圳市灵科科技有限公司 | A kind of video and audio meeting camera |
| CN114731358A (en) * | 2019-10-21 | 2022-07-08 | 宁波舜宇光电信息有限公司 | Circuit board assembly, photosensitive assembly, camera module and preparation methods of circuit board assembly and photosensitive assembly |
| CN114731358B (en) * | 2019-10-21 | 2023-10-27 | 宁波舜宇光电信息有限公司 | Circuit board assembly, photosensitive assembly, camera module and preparation method of circuit board assembly and photosensitive assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101070921B1 (en) | Chip package for image sensor and method of manufacturing the same | |
| US6943423B2 (en) | Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof | |
| US20030223008A1 (en) | Image sensor module and process of fabricating the same | |
| US7593636B2 (en) | Pin referenced image sensor to reduce tilt in a camera module | |
| US20040056971A1 (en) | Thin type camera module | |
| US20040041282A1 (en) | Flip-chip image sensor packages and methods of fabrication | |
| US20040041221A1 (en) | Leadless packaging for image sensor devices and methods of assembly | |
| US20100328525A1 (en) | Camera module | |
| KR20040027351A (en) | Camera module | |
| US20040256687A1 (en) | Optical module, method of manufacturing the same, and electronic instrument | |
| KR102249873B1 (en) | Photographic assembly and packaging method thereof, lens module, electronic device | |
| CN2645377Y (en) | Thin type photographic module | |
| KR102250618B1 (en) | Photographic assembly and packaging method thereof, lens module, electronic device | |
| KR20200063104A (en) | Filming assembly and its packaging method, lens module, electronic device | |
| KR100956381B1 (en) | method for manufacturing wafer level camera module | |
| KR100526191B1 (en) | Solid-State Imaging Apparatus | |
| CN1864263A (en) | Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof | |
| US20120007148A1 (en) | Solid-state image pickup device and method for manufacturing same | |
| CN111263028B (en) | Camera shooting assembly and packaging method thereof, lens module and electronic equipment | |
| US7091469B2 (en) | Packaging for optoelectronic devices | |
| US20090315130A1 (en) | Solid-state imaging apparatus and method for manufacturing the same | |
| KR100584977B1 (en) | Image sensor modular of a CoG type and manufacture method thereof | |
| KR100990397B1 (en) | wafer level image sensor module and method of manufacturing the same and camera module using thereof | |
| KR102250603B1 (en) | Photographic assembly and packaging method thereof, lens module, electronic device | |
| TWM244691U (en) | Supper thin type camera module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: QIBANG SCI-TECH CO., LTD. Free format text: FORMER NAME: INTERNATIONAL SEMICONDUCTOR TECHNOLOGY LTD. |
|
| CP03 | Change of name, title or address |
Address after: Taiwan, China Hsinchu science and Technology Industrial Park, Hsinchu East Road, No. five, No. 3 Patentee after: Chipbond Technology Corporation Address before: China Taiwan Kaohsiung processing export zone Patentee before: International Semiconductor Technology Ltd. |
|
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20130827 Granted publication date: 20040929 |