CN2563752Y - ZnO base heterojunction light-emitting diode - Google Patents
ZnO base heterojunction light-emitting diode Download PDFInfo
- Publication number
- CN2563752Y CN2563752Y CN02266540U CN02266540U CN2563752Y CN 2563752 Y CN2563752 Y CN 2563752Y CN 02266540 U CN02266540 U CN 02266540U CN 02266540 U CN02266540 U CN 02266540U CN 2563752 Y CN2563752 Y CN 2563752Y
- Authority
- CN
- China
- Prior art keywords
- light
- zno
- emitting diode
- based heterojunction
- heterojunction light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model is a ZnO-based heterojunction light-emitting diode which comprises a first electrode layer, an n-ZnO film layer, a Cdx Zn1-x O substrate, a p-ZnO film layer and a second electrode layer deposited on an underlay from bottom to top in turn. The ZnO-based heterojunction light-emitting diode of the utility model has the advantages that: 1) the adjustable band gap of 2.8-3.3eV can be acquired by utilizing the adjusting function to a forbidden band of a luminescent layer by the Cd doping so as to make a plurality of luminous devices which can send out ultraviolet light, purple light, green light and glue light. And 2) the ZnO-based heterostructure has excellent interface lattice match performance, as well as favoring the enhancement of the performance of the devices.
Description
Technical field
The utility model relates to light-emitting diode.
Background technology
ZnO is a kind of desirable short-wave long light-emitting device material, and at present, the light-emitting diode of zno-based (LED) is as p-SrCu
2O
2The UVLED of/n-ZnO structure is successively by barrier layer, p-SrCu
2O
2Thin layer, n-ZnO, metal electrode layer deposition form, and are simple heterostructures, and emission wavelength is non-adjustable.
Summary of the invention
The purpose of this utility model provide a kind of luminescent layer can with adjustable, have the zno-based heterojunction light-emitting diode multi-layer quantum heterostructure, that emission wavelength is adjustable.
Zno-based heterojunction light-emitting diode of the present utility model on substrate from bottom to top successively by first electrode layer, n-ZnO thin layer, Cd
xZn
1-xO basic unit, p-ZnO thin layer, the second electrode lay deposition form.
In the utility model, substrate can adopt glass, sapphire, silicon, gallium nitride and zinc oxide.First electrode layer can be zinc oxide conductive film or a metallic film of mixing aluminium.The second electrode lay is aluminium or gold.
The advantage of zno-based heterojunction light-emitting diode of the present utility model is:
1) utilizes Cd to mix, can obtain the gap tunable of 2.8～3.3eV, make multiple luminescent devices such as ultraviolet light, purple light, green glow, blue light the regulating action in luminescent layer forbidden band.
2) zno-based heterostructure, the interface crystal lattice matching is good, helps improving the performance of device.
Description of drawings
Accompanying drawing is the utility model zno-based heterojunction light-emitting diode structure schematic diagram.
Embodiment
Zno-based heterojunction light-emitting diode of the present utility model is to utilize common pulsed laser deposition method, deposits first electrode layer 1, n-ZnO thin layer 2, Cd on substrate 6 from bottom to top successively
xZn
1-xO basic unit 3, p-ZnO thin layer 4, the second electrode lay 5 constitute.(see figure 1).Wherein, Cd
xZn
1-xX value in the O basic unit 0～1 adjustable, by regulating the X value, change luminous wave band, can obtain launching the light-emitting diode of ultraviolet light, purple light, green glow or blue light.
Claims (6)
1.ZnO the base heterojunction light-emitting diode is characterized in that on substrate (6) from bottom to top successively by first electrode layer (1), n-ZnO thin layer (2), Cd
xZn
1-xO basic unit (3), p-ZnO thin layer (4), the second electrode lay (5) deposition form.
2. by the described zno-based heterojunction of claim 1 light-emitting diode, it is characterized in that said Cd
xZn
1-xX value among the O is 0～1.
3. by claim 1 or 2 described zno-based heterojunction light-emitting diodes, it is characterized in that its emission ultraviolet light, purple light, green glow or blue light.
4. by claim 1 or 2 described zno-based heterojunction light-emitting diodes, it is characterized in that said substrate is glass, sapphire, silicon, gallium nitride and zinc oxide.
5. by claim 1 or 2 described zno-based heterojunction light-emitting diodes, it is characterized in that said first electrode layer is zinc oxide conductive film or a metallic film of mixing aluminium.
6. by claim 1 or 2 described zno-based heterojunction light-emitting diodes, it is characterized in that said the second electrode lay is aluminium or gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02266540U CN2563752Y (en) | 2002-08-20 | 2002-08-20 | ZnO base heterojunction light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02266540U CN2563752Y (en) | 2002-08-20 | 2002-08-20 | ZnO base heterojunction light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2563752Y true CN2563752Y (en) | 2003-07-30 |
Family
ID=33732328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN02266540U Expired - Fee Related CN2563752Y (en) | 2002-08-20 | 2002-08-20 | ZnO base heterojunction light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2563752Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777612B (en) * | 2009-12-31 | 2012-12-05 | 华南师范大学 | ZnO-based light-emitting diode and preparation method thereof |
-
2002
- 2002-08-20 CN CN02266540U patent/CN2563752Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777612B (en) * | 2009-12-31 | 2012-12-05 | 华南师范大学 | ZnO-based light-emitting diode and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |