CN1925178A - ZnO radicle quanta point luminescent diode - Google Patents
ZnO radicle quanta point luminescent diode Download PDFInfo
- Publication number
- CN1925178A CN1925178A CNA2006100536086A CN200610053608A CN1925178A CN 1925178 A CN1925178 A CN 1925178A CN A2006100536086 A CNA2006100536086 A CN A2006100536086A CN 200610053608 A CN200610053608 A CN 200610053608A CN 1925178 A CN1925178 A CN 1925178A
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- CN
- China
- Prior art keywords
- zno
- quantum dot
- emitting diode
- light emitting
- electrode
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 53
- 239000002096 quantum dot Substances 0.000 claims description 32
- 239000011787 zinc oxide Substances 0.000 claims description 30
- 239000011701 zinc Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
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Abstract
This invention discloses one ZnO quantum point light diode tube, which comprises the following parts: n-ZnO film layer deposited from top to end; n-Zn<1-x>Mg<x>O film layer; ZnO quantum layer; p-Zn<1-x>Mg<x>O film layer; p-ZnO film layer and second electrode and the first electrode deposited on the other side of underlay, wherein the ZnO quantum points is composed of ZnO/Zn<1-y>Mg<y>O quantum well layers.
Description
Technical field
The present invention relates to light-emitting diode, especially zno-based quantum dot light emitting diode.
Background technology
ZnO is considered to a kind of desirable short-wave long light-emitting device material owing to the bandwidth of 3.37eV under its room temperature and the exciton bind energy of 60meV.At present, the preparation of p-ZnO film has obtained major progress, makes to realize that the zno-based light-emitting diode becomes possibility.
On the other hand, semiconductor-quantum-point is owing to the growth mechanism of its self assembly, and each quantum dot has excellent crystalline quality.More owing to the quantum local effect, quantum dot has than the better luminescent properties of body material.Therefore with the active layer of quantum dot, can improve luminous efficiency greatly as light-emitting diode.And,, can get the emergent light of different-waveband by adjusting to the quantum dot size according to quantum constraint effect.
Summary of the invention
The purpose of this invention is to provide a kind of zno-based quantum dot light emitting diode, for light-emitting diode increases new varieties.
Zno-based quantum dot light emitting diode of the present invention is to be base with ZnO, deposits n-ZnO thin layer, n-Zn from bottom to top successively in the one side of substrate
1-xMg
xO thin layer, ZnO quantum dot layer, p-Zn
1-xMg
xO thin layer, p-ZnO thin layer and second electrode deposit first electrode at the another side of substrate, and wherein said ZnO quantum dot layer is by being embedded in ZnO/Zn
1-yMg
yThe ZnO quantum dot of O quantum well layer constitutes, and the y value is 0～0.5.
Among the present invention, said n-Zn
1-xMg
xO and p-Zn
1-xMg
xX value among the O is 0～0.6.Said ZnO quantum dot is of a size of 3～10nm.First electrode can be the Ti/Au alloy, and second electrode can be the Ni/Au alloy.Substrate can adopt silicon, zinc oxide or gallium nitride.
The advantage of zno-based quantum dot light emitting diode is:
1) quantum dot is as active layer, the luminous efficiency height;
2) ZnO homojunction structure, the interface crystal lattice matching is good, helps improving the performance of device;
3) by adjusting to ZnO quantum dot size, can get the emergent light of different-waveband, make multiple luminescent devices such as ultraviolet light, purple light or blue light.
Description of drawings
Fig. 1 is the structural representation of zno-based quantum dot light emitting diode of the present invention.
Embodiment
Zno-based quantum dot light emitting diode of the present invention is to utilize metal-organic chemical vapor deposition equipment (MOCVD) technology, deposits n-ZnO thin layer 2, n-Zn from bottom to top successively in the one side of substrate 1
1-xMg
xO thin layer 3, ZnO quantum dot layer 4, p-Zn
1-xMg
xO thin layer 5, p-ZnO thin layer 6 and second electrode 8 deposit first electrode 7 at the another side of substrate 1 and constitute (see figure 1)s.Wherein, ZnO quantum dot layer 4 is by being embedded in ZnO/Zn
1-yMg
yThe ZnO quantum dot of O quantum well layer constitutes, and the y value is 0～0.5; The ZnO quantum dot is of a size of 3～10nm.P-Zn
1-xMg
xO and n-Zn
1-xMg
xX value among the O is adjustable at 0～0.6.By adjusting to ZnO quantum dot size, change luminous wave band, can obtain launching the light-emitting diode of ultraviolet light, purple light or blue light.
Claims (6)
1. zno-based quantum dot light emitting diode is characterized in that with ZnO being base, deposits n-ZnO thin layer (2), n-Zn from bottom to top successively in the one side of substrate (1)
1-xMg
xO thin layer (3), ZnO quantum dot layer (4), p-Zn
1-xMg
xO thin layer (5), p-ZnO thin layer (6) and second electrode (8) deposit first electrode (7) at the another side of substrate (1), and wherein ZnO quantum dot layer (4) is by being embedded in ZnO/Zn
1-yMg
yThe ZnO quantum dot of O quantum well layer constitutes, and the y value is 0～0.5.
2. zno-based quantum dot light emitting diode according to claim 1 is characterized in that said n-Zn
1-xMg
xO and p-Zn
1-xMg
xX value among the O is 0～0.6.
3. zno-based quantum dot light emitting diode according to claim 1 and 2 is characterized in that substrate is silicon, zinc oxide or gallium nitride.
4. zno-based quantum dot light emitting diode according to claim 1 and 2 is characterized in that first electrode (7) is the Ti/Au alloy, and second electrode (8) is the Ni/Au alloy.
5. zno-based quantum dot light emitting diode according to claim 1 and 2 is characterized in that described light-emitting diode emission ultraviolet light, purple light or blue light.
6. zno-based quantum dot light emitting diode according to claim 1 is characterized in that said ZnO quantum dot is of a size of 3～10nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100536086A CN100517780C (en) | 2006-09-26 | 2006-09-26 | ZnO radicle quanta point luminescent diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100536086A CN100517780C (en) | 2006-09-26 | 2006-09-26 | ZnO radicle quanta point luminescent diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1925178A true CN1925178A (en) | 2007-03-07 |
| CN100517780C CN100517780C (en) | 2009-07-22 |
Family
ID=37817724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100536086A Expired - Fee Related CN100517780C (en) | 2006-09-26 | 2006-09-26 | ZnO radicle quanta point luminescent diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100517780C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969058A (en) * | 2010-08-17 | 2011-02-09 | 浙江大学 | Planar LED structure |
| CN106299076A (en) * | 2015-05-19 | 2017-01-04 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
| CN107275449A (en) * | 2017-05-23 | 2017-10-20 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3289682B2 (en) * | 1998-08-17 | 2002-06-10 | 株式会社村田製作所 | Semiconductor light emitting device |
| CN1197176C (en) * | 2002-08-20 | 2005-04-13 | 浙江大学 | ZnO-base homojunction LED |
| CN200959338Y (en) * | 2006-09-26 | 2007-10-10 | 浙江大学 | ZnO-based quantum-point LED |
-
2006
- 2006-09-26 CN CNB2006100536086A patent/CN100517780C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969058A (en) * | 2010-08-17 | 2011-02-09 | 浙江大学 | Planar LED structure |
| CN106299076A (en) * | 2015-05-19 | 2017-01-04 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
| CN106299076B (en) * | 2015-05-19 | 2019-02-01 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
| CN107275449A (en) * | 2017-05-23 | 2017-10-20 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
| CN107275449B (en) * | 2017-05-23 | 2019-06-11 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100517780C (en) | 2009-07-22 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 Termination date: 20130926 |