CN200959338Y - ZnO-based quantum-point LED - Google Patents
ZnO-based quantum-point LED Download PDFInfo
- Publication number
- CN200959338Y CN200959338Y CNU2006201081647U CN200620108164U CN200959338Y CN 200959338 Y CN200959338 Y CN 200959338Y CN U2006201081647 U CNU2006201081647 U CN U2006201081647U CN 200620108164 U CN200620108164 U CN 200620108164U CN 200959338 Y CN200959338 Y CN 200959338Y
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- CN
- China
- Prior art keywords
- zno
- quantum dot
- emitting diode
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000002096 quantum dot Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 55
- 239000011787 zinc oxide Substances 0.000 claims description 31
- 239000011701 zinc Substances 0.000 claims description 15
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 5
- 229910007541 Zn O Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
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Abstract
The utility model discloses a Z n O base quantum dot LED, and is based on Z n O. One surface of a substrate is accumulated from upper to lower in order with a n-Zn O thin film, a n-Zn[1-x] Mg[x] O thin film, a Z n O thin film, a p-Zn[1-x] Mg[x] O thin film, a p-Z n O thin film and a second electrode. Another surface of the substrate is accumulated to be formed by a first electrode. The Z n O quantum dot layer comprises the Z n O quantum dot inserted in the Z n O / Z n[1-y] Mg[y] O quantum well layer. The LED of the utility model is used the Z n O quantum dot as a resource layer with high lighting efficiency; The utility model takes advantages of having Z n O homojunction structure, good matching of interface crystal lattice, and is helpful to improve the device performance, Through the adjustment for the size of the Z n O quantum dot, the utility model can receive a emergent light with different bands, and makes plurality of lighting devices like the ultraviolet light, purple light or blue light.
Description
Technical field
The utility model relates to light-emitting diode, especially zno-based quantum dot light emitting diode.
Background technology
ZnO is considered to a kind of desirable short-wave long light-emitting device material owing to the bandwidth of 3.37eV under its room temperature and the exciton bind energy of 60meV.At present, the preparation of p-ZnO film has obtained major progress, makes to realize that the zno-based light-emitting diode becomes possibility.
On the other hand, semiconductor-quantum-point is owing to the growth mechanism of its self assembly, and each quantum dot has excellent crystalline quality.More owing to the quantum local effect, quantum dot has than the better luminescent properties of body material.Therefore with the active layer of quantum dot, can improve luminous efficiency greatly as light-emitting diode.And,, can get the emergent light of different-waveband by adjusting to the quantum dot size according to quantum constraint effect.
Summary of the invention
The purpose of this utility model provides a kind of zno-based quantum dot light emitting diode, for light-emitting diode increases new varieties.
Zno-based quantum dot light emitting diode of the present utility model is to be base with ZnO, deposits n-ZnO thin layer, n-Zn from bottom to top successively in the one side of substrate
1-xMg
xO thin layer, ZnO quantum dot layer, p-Zn
1-xMg
xO thin layer, p-ZnO thin layer and second electrode deposit first electrode at the another side of substrate, and wherein said ZnO quantum dot layer is by being embedded in ZnO/Zn
1-yMg
yThe ZnO quantum dot of O quantum well layer constitutes, and the y value is 0～0.5.
In the utility model, said n-Zn
1-xMg
xO and p-Zn
1-xMg
xX value among the O is 0～0.6.Said ZnO quantum dot is of a size of 3～10nm.First electrode can be the Ti/Au alloy, and second electrode can be the Ni/Au alloy.Substrate can adopt silicon, zinc oxide or gallium nitride.
The advantage of zno-based quantum dot light emitting diode is:
1) quantum dot is as active layer, the luminous efficiency height;
2) ZnO homojunction structure, the interface crystal lattice matching is good, helps improving the performance of device;
3) by adjusting to ZnO quantum dot size, can get the emergent light of different-waveband, make multiple luminescent devices such as ultraviolet light, purple light or blue light.
Description of drawings
Fig. 1 is the structural representation of the utility model zno-based quantum dot light emitting diode.
Embodiment
Zno-based quantum dot light emitting diode of the present utility model is to utilize metal-organic chemical vapor deposition equipment (MOCVD) technology, deposits n-ZnO thin layer 2, n-Zn from bottom to top successively in the one side of substrate 1
1-xMg
xO thin layer 3, ZnO quantum dot layer 4, p-Zn
1-xMg
xO thin layer 5, p-ZnO thin layer 6 and second electrode 8 deposit first electrode 7 at the another side of substrate 1 and constitute (see figure 1)s.Wherein, ZnO quantum dot layer 4 is by being embedded in ZnO/Zn
1-yMg
yThe ZnO quantum dot of O quantum well layer constitutes, and the y value is 0～0.5; The ZnO quantum dot is of a size of 3～10nm.P-Zn
1-xMg
xO and n-Zn
1-xMg
xX value among the O is adjustable at 0～0.6.By adjusting to ZnO quantum dot size, change luminous wave band, can obtain launching the light-emitting diode of ultraviolet light, purple light or blue light.
Claims (6)
1.ZnO radicle quanta point luminescent diode is characterized in that with ZnO being base, deposits n-ZnO thin layer (2), n-Zn from bottom to top successively in the one side of substrate (1)
1-xMg
xO thin layer (3), ZnO quantum dot layer (4), p-Zn
1-xMg
xO thin layer (5), p-ZnO thin layer (6) and second electrode (8) deposit first electrode (7) at the another side of substrate (1), and wherein ZnO quantum dot layer (4) is by being embedded in ZnO/Zn
1-yMg
yThe ZnO quantum dot of O quantum well layer constitutes, and the y value is 0～0.5.
2. zno-based quantum dot light emitting diode according to claim 1 is characterized in that said n-Zn
1-xMg
xO and p-Zn
1-xMg
xX value among the O is 0～0.6.
3. zno-based quantum dot light emitting diode according to claim 1 and 2 is characterized in that substrate is silicon, zinc oxide or gallium nitride.
4. zno-based quantum dot light emitting diode according to claim 1 and 2 is characterized in that first electrode (7) is the Ti/Au alloy, and second electrode (8) is the Ni/Au alloy.
5. zno-based quantum dot light emitting diode according to claim 1 and 2 is characterized in that described light-emitting diode emission ultraviolet light, purple light or blue light.
6. zno-based quantum dot light emitting diode according to claim 1 is characterized in that said ZnO quantum dot is of a size of 3～10nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006201081647U CN200959338Y (en) | 2006-09-26 | 2006-09-26 | ZnO-based quantum-point LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006201081647U CN200959338Y (en) | 2006-09-26 | 2006-09-26 | ZnO-based quantum-point LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200959338Y true CN200959338Y (en) | 2007-10-10 |
Family
ID=38786219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006201081647U Expired - Fee Related CN200959338Y (en) | 2006-09-26 | 2006-09-26 | ZnO-based quantum-point LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200959338Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100517780C (en) * | 2006-09-26 | 2009-07-22 | 浙江大学 | ZnO radicle quanta point luminescent diode |
| CN109225297A (en) * | 2018-09-29 | 2019-01-18 | 台州学院 | A kind of composite catalyst QDs-SISCN and its preparation method and application |
-
2006
- 2006-09-26 CN CNU2006201081647U patent/CN200959338Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100517780C (en) * | 2006-09-26 | 2009-07-22 | 浙江大学 | ZnO radicle quanta point luminescent diode |
| CN109225297A (en) * | 2018-09-29 | 2019-01-18 | 台州学院 | A kind of composite catalyst QDs-SISCN and its preparation method and application |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |