CN2537007Y - High-temperature pressure differential sensor - Google Patents
High-temperature pressure differential sensor Download PDFInfo
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- CN2537007Y CN2537007Y CN 01271135 CN01271135U CN2537007Y CN 2537007 Y CN2537007 Y CN 2537007Y CN 01271135 CN01271135 CN 01271135 CN 01271135 U CN01271135 U CN 01271135U CN 2537007 Y CN2537007 Y CN 2537007Y
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- core body
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Abstract
The utility model relates to a high temperature pressure difference sensor, belonging to the field of sensor, which is characterized that the pressure sensitive core body inside the sensor is composed of two symmetric identical E-shaped film cores; wherein, a film of silicon on sapphire strain gauge is positioned on the upper surface of the E-shaped film; an inner led and outer led adapter at the rear part of the pressure sensitive core body is made of machinable ceramics material. The utility model is characterized in that a split structure technical proposal is used, so that the two pressure sensitive core bodies respectively and directly sense the pressure difference of the medium under high-temperature environment. The utility model has an advantage of applicability for high temperature range and large pressure difference range.
Description
(1) technical field
The utility model belongs to sensor field, specially refer to a kind of under the condition of high temperature sensor of detected pressures difference.
(2) background technology
Sensor is familiar with by people more and more widely producing and the occupied critical role of various fields in life, and the scientific development in nearly all field all be unable to do without sensor.Measure the used sensor of pressure differential of gas in two different cavitys or liquid medium, be called differential pressure pickup.This differential pressure pickup, the message of having reported with regard to the home and abroad as can be known, they only are applicable in-55~125 ℃ temperature environment and use that the scope of measured pressure difference also only is 0~10MPa.The structure majority of this sensor is a monofilm chip sensitive structure, and it only has in the presser sensor core body.When the medium cavity is in hot environment, for example at-55~300 ℃ environment, the scope of measured medium pressure differential is under the situation of 0~60Mpa, and this traditional differential pressure pickup is just powerless.In order can under the situation of this high temperature, High Pressure Difference, to work, just must reform from one-piece construction, simultaneously, aspect the selection of material, carried out innovative experiment research, could satisfy the higher day by day requirement of user.
(3) summary of the invention
The technical issues that need to address, be to overcome weak point that existing differential pressure pickup exists because of structure and selection can't be adapted to a kind of like this defective of under high temperature and big differential pressure range, measuring, thereby need a kind of structure of pair diaphragm pressure sensitive core body that adopts of redesign adapt to higher requirement.For addressing this problem, the technical scheme that is adopted is, a kind of high-temperature high-pressure gap sensor, comprise the differential pressure pickup pedestal, housing, the pressure inside sensitive core body, the connector and the lead-in wire thereof that are connected with the external signal regulator, it is characterized in that, the pressure inside sensitive core body adopts two symmetries, identical E shape diaphragm core body formula structure, E shape diaphragm upper surface melting welding one deck silicon-sapphire foil gauge in this structure, the rear portion of presser sensor core body adopts machinable stupalith as inside and outside lead-in wire switching.
Described E shape diaphragm pressure sensitive core body, its structure is that the pressure interface outer rim of refractory metal links to each other with upper shield, inner edge links to each other with E shape diaphragm, the cover postoperculum is lead-in wire switching and end cap, its E shape diaphragm adopts full titanium alloy welded structure, and silicon-sapphire foil gauge can be integral by silver-spelter solder and the melting welding of E shape titanium alloy diaphragm.This welding is carried out under the high-temperature vacuum state.
The described inside and outside lead that on pottery switching, connects, can adopt spun gold is internal lead, refractory metal is an outer lead.By the signal conditioner that links to each other with connector the signal amplifying part branch is all placed normal temperature environment.Because output signal is 0~5V, and pressure-sensing device is output as the voltage signal of 100mV, so must be through processing and amplifying.
The beneficial effect of this structure is to adopt the split organization plan, and two presser sensor core bodys are directly experienced the pressure reduction of medium under the hot environment respectively, thereby applicable temperature range height, and measurable pressure differential range is big.
(4) description of drawings
Fig. 1 is a differential pressure pickup general structure synoptic diagram
Fig. 2 is an E shape presser sensor core cut-open view
Fig. 3 is in the outer signal conditioner outside drawing of sensor body
Fig. 4 is the signal conditioner circuit schematic diagram
(5) embodiment
With reference to Fig. 1, expression differential pressure pickup structural representation.Among the figure, sensor base is provided with pedestal 1, is covered with housing 2 on it, and enclosure interior is parallel to be provided with two identical presser sensor core bodys 3 side by side, 4 presser sensor core body 3 is connected with connector 5 by going between.With reference to Fig. 2, the project organization figure that represents a kind of E shape presser sensor core body, in the present embodiment, its external interface place is a titanium alloy pressure interface 3.1, the outer rim mouth links to each other with upper shield 3.2, the inner edge mouth links to each other with titanium alloy E shape diaphragm 3.3, and silicon-sapphire diaphragm 3.5 is integral by silver-copper brazing alloy 3.4 and the melting welding of E shape diaphragm.The rear portion of upper shield 2 is lead-in wire switching 6, and spun gold internal lead 7 is all outwards drawn by end cap 9 with refractory metal outer lead 8.
Fig. 3 represents general signal conditioner contour structures, and its socket links to each other with connector 5 among Fig. 2.Fig. 4 represents the signal conditioner circuit schematic diagram, measure the force value of two pressure port respectively owing to adopt two pressure-sensing devices in the said structure, the amplifier circuit " 1 " that the two-stage sensitive core body promptly is set in corresponding electronic circuit reaches " 2 ", exports with the voltage signal of 0~5V at last through amplifying signal.
Claims (4)
1. high-temperature high-pressure gap sensor, comprise the differential pressure pickup pedestal, housing, the pressure inside sensitive core body, the connector and the lead-in wire thereof that are connected with the external signal regulator is characterized in that, the pressure inside sensitive core body adopts two symmetries, identical E shape diaphragm core body formula structure, E shape diaphragm upper surface melting welding one deck silicon-sapphire foil gauge in this structure, the rear portion of presser sensor core body adopts machinable stupalith as inside and outside lead-in wire switching.
2. sensor according to claim 1 is characterized in that, described E shape diaphragm pressure sensitive core body, and its structure is that the pressure interface outer rim of refractory metal links to each other with upper shield, and inner edge links to each other with E shape diaphragm, and the cover postoperculum is lead-in wire switching and end cap,
3. sensor according to claim 1 is characterized in that, its E shape diaphragm adopts full titanium alloy welded structure, and silicon-sapphire foil gauge can be integral by silver-spelter solder and the melting welding of E shape titanium alloy diaphragm.
4. sensor according to claim 1 is characterized in that, the described inside and outside lead that on pottery switching, connects, and can adopt spun gold is internal lead, refractory metal is an outer lead.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 01271135 CN2537007Y (en) | 2001-11-21 | 2001-11-21 | High-temperature pressure differential sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 01271135 CN2537007Y (en) | 2001-11-21 | 2001-11-21 | High-temperature pressure differential sensor |
Publications (1)
Publication Number | Publication Date |
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CN2537007Y true CN2537007Y (en) | 2003-02-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 01271135 Expired - Fee Related CN2537007Y (en) | 2001-11-21 | 2001-11-21 | High-temperature pressure differential sensor |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103868641A (en) * | 2014-03-21 | 2014-06-18 | 刘剑飚 | Micro differential pressure sensor |
CN106768602A (en) * | 2017-01-10 | 2017-05-31 | 北京强度环境研究所 | A kind of small-sized differential pressure pickup |
CN107505081A (en) * | 2017-08-21 | 2017-12-22 | 北京精密机电控制设备研究所 | A kind of small-sized silicon on sapphire differential pressure pickup |
CN109141616A (en) * | 2018-07-26 | 2019-01-04 | 耿靓 | A kind of distribution pressure difference measurement sensor and method |
CN110926684A (en) * | 2019-12-17 | 2020-03-27 | 中国电子科技集团公司第四十九研究所 | Adapter ring structure of 350 ℃ high-temperature-resistant pressure sensor |
CN111207879A (en) * | 2020-01-15 | 2020-05-29 | 中国电子科技集团公司第四十九研究所 | Silicon-sapphire single-core differential pressure sensor |
-
2001
- 2001-11-21 CN CN 01271135 patent/CN2537007Y/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103868641A (en) * | 2014-03-21 | 2014-06-18 | 刘剑飚 | Micro differential pressure sensor |
CN106768602A (en) * | 2017-01-10 | 2017-05-31 | 北京强度环境研究所 | A kind of small-sized differential pressure pickup |
CN107505081A (en) * | 2017-08-21 | 2017-12-22 | 北京精密机电控制设备研究所 | A kind of small-sized silicon on sapphire differential pressure pickup |
CN109141616A (en) * | 2018-07-26 | 2019-01-04 | 耿靓 | A kind of distribution pressure difference measurement sensor and method |
CN110926684A (en) * | 2019-12-17 | 2020-03-27 | 中国电子科技集团公司第四十九研究所 | Adapter ring structure of 350 ℃ high-temperature-resistant pressure sensor |
CN111207879A (en) * | 2020-01-15 | 2020-05-29 | 中国电子科技集团公司第四十九研究所 | Silicon-sapphire single-core differential pressure sensor |
CN111207879B (en) * | 2020-01-15 | 2021-11-02 | 中国电子科技集团公司第四十九研究所 | Silicon-sapphire single-core differential pressure sensor |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |