CN2395283Y - Property detector for infrared focal plane array probe - Google Patents
Property detector for infrared focal plane array probe Download PDFInfo
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- CN2395283Y CN2395283Y CN 99240032 CN99240032U CN2395283Y CN 2395283 Y CN2395283 Y CN 2395283Y CN 99240032 CN99240032 CN 99240032 CN 99240032 U CN99240032 U CN 99240032U CN 2395283 Y CN2395283 Y CN 2395283Y
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Abstract
The utility model discloses a property testing device for an infrared focal plane array probe chip. The utility model is provided with a radiation source, a light column, a modulating disk and a vacuum EM shielded room which is provided with a ZnS window orderly. The vacuum room is provided with a 45 DEG reflecting mirror, a chip which is arranged on a low temperature Dewar cold head of a chip translation table, a signal probe frame which is arranged on the signal translation table, a grounded probe frame and a crosstalk probe frame which are arranged on a fixed platform. The positioning accuracy of the translation reaches about 2.5 microns and the electrooptical signal generated on a chip image element is input in a vacuum outdoor measuring instrument by a shield wire of a probe to be measured. The device is suitable for testing the property of large-scale array chips.
Description
The utility model relates to a kind of performance testing device of infrared eye, the particularly performance testing device of infrared focal plane array detector chip.
In the preparation process of infrared focal plane array detector, the performance test of array chip is absolutely necessary.Because array chip pixel closeness height, quantity is many, electrode diameter is minimum (10-30 μ m), and short texture, the pixel signal is drawn from electrode can not damage electrode; Chip must freeze below the 90K, and chip surface can not form frost, not have the oil contamination; The signal of being surveyed is small, signal draw the signal to noise ratio (S/N ratio) that must reach quite high.Therefore, the performance data of correct array chip be obtained, above technological difficulties must be solved.
In the present existing technology, the open type liquid nitrogen cooling is adopted in the refrigeration of chip, in order to prevent the chip surface frost of refrigeration, part nitrogen protection around the chip, this method can only be kept at short notice, and, Measuring Time many as pixel quantity grown, will be influenced measurement accuracy; Many pixel signals draws to contact with the pixel electrode with probe and realizes on the chip, and depressing at every turn and lifting of probe is by set screw probe springs sheet pressure to be controlled, cause the too big damage pixel of probe and electrode loose contact or pressure electrode easily like this, and inefficiency; Because measured weak output signal, the open type measurement is difficult to the signal to noise ratio (S/N ratio) that reaches high.Therefore this simple and crude measurement mechanism is difficult to finish the measurement requirement of large scale integrated chip (LSI chip).
The purpose of this utility model is to overcome the problem that exists in the above-mentioned prior art, changes original open type liquid nitrogen cooling into enclosed liquid nitrogen cooling, and can play the effect of electromagnetic screen; Assurance probe and contacting of pixel well and are not damaged electrode; The mobile Mechanical Driven of using of probe is increased work efficiency.
Solution of the present utility model is that the electromagnetic screen of a vacuum is partly put in chip refrigeration part, probe measurement is indoor, can prevent that like this chip from surperficial frosting and space staiing owing to refrigeration forms, and electromagnetic screen can improve chip measurement signal to noise ratio (S/N ratio); Probe and pixel electrode contact pressure are constant and adjustable, probe lift and depress operating rod control by joining with universal shaft, probe and pixel electrode contact condition are observed by display with the microscope that has the CCD camera by the watch window on the vacuum chamber.
Entire measuring device comprises: infrared origin 2, be equipped with light hurdle 3 successively on the direction of advancing along the infrared radiating light of radiation source emission, chopper wheel 4, the vacuum chamber 42 that has the ZnS window 6 of infrared radiation, 45 ° of catoptrons 7 are put in vacuum chamber, with ZnS window 6 on same horizontal line, with the perpendicular top of 45 ° of catoptrons 7, the end face of vacuum chamber 42 is equipped with view window 18, be equipped with chip translation stage 11 at the vacuum chamber inner bottom part, be equipped with the cooled cryostat 9 of band cold head 10 on the chip translation stage, be equipped with chip 8 on the cold head 10, in vacuum chamber inner bottom part and chip translation stage corresponding section, be equipped with parallel moving of signal platform 25 and stationary platform 26, be equipped with signal probe frame 22 on the parallel moving of signal platform, be equipped with grounded probe frame 23 and cross-talk probe carriage 24 on the stationary platform 26, all pixel signal output is by the signal probe frame on the chip 8, probe on grounded probe frame and the cross-talk probe carriage is drawn, and is input to the outer surveying instrument 43 of vacuum chamber by shielding line.Outside the vacuum chamber, be equipped with the microscope 19 of band CCD camera 20 above the view window 18, camera links to each other with display 21.
The stainless steel material that has cover plate that said vacuum chamber 42 is a geometric configuration is made, and is built-in with an illuminating lamp 17, and the bottom is equipped with power-line terminal 38, signal binding post 39, mechanical pump bleeding point 40, molecular-sieve sorption pump bleeding point 41.
Said chip translation stage 11 is driven by stepper motor 14-1,14-2 and makes X, Y to moving, and the chip translation stage is around the rotation of Z axle horizontal direction, by the driving that links to each other with universal shaft 12 in the vacuum chamber of the outer operating rod 13 of vacuum chamber.
Said cooled cryostat 9 tops have a liquid nitrogen input pipe 15 to link to each other with vacuum chamber sidewall liquid nitrogen input port 16.Being equipped with temperature detecting resistance 44 on the cold head 10 of cooled cryostat links to each other by the outer surveying instrument 43 of lead and vacuum chamber.
Said parallel moving of signal platform 25 is driven by two stepper motor 27-1,27-2, makes X, Y respectively to moving.
The X of said cross-talk probe carriage 24, Y are to moving respectively by the operating rod outside the vacuum chamber 35,37 driving that links to each other with universal shaft 34,36 in the vacuum chamber.
Said signal probe frame 22, grounded probe frame 23, cross-talk probe carriage 24 link to each other with an end of universal shaft 28,29,32 respectively, the other end of universal shaft 28,29,32 joins with vacuum chamber operating rod 30,31,33 outward respectively, and the probe of controlling probe carriage respectively lifts and depress two kinds of duties.Said structure is seen accompanying drawing one, accompanying drawing two.
Description of drawings:
Figure one is an infrared focal plane array detector chip performance testing device.
Figure two is vacuum chamber plan structure figure.
Embodiment:
Consult figure one, the infrared radiating light of infrared origin 2 emissions, become light modulated through light hurdle 3, chopper wheel 4, enter vacuum chamber 42 by the ZnS window 6 that blocks door 5, vacuum chamber 42 sidewalls, through 7 reflections of 45 ° of catoptrons, on the chip 8 of vertical irradiation to the cold head 10 that places cooled cryostat 9 on the chip translation stage 11, all pixels produces photosignal on the chip, by the probe 22-1 that places the signal probe frame 22 on the parallel moving of signal platform 25 with place the probe 23-1 of the grounded probe frame 23 on the stationary platform 26 to draw.Cross-talk between two pixels is by by placing the probe 24-1 on the cross-talk probe carriage 24 on the stationary platform 26 to import a modulation signal, at the crosstalk signal of being drawn adjacent two pixels on the adjacent picture elements by probe 22-1 on the signal probe frame 22 and the probe 23-1 on the grounded probe frame.The drawing to be input on the surveying instrument 43 by signal binding post 9 by shielding line of signal measured.It is by set screw the probe springs sheet to be pressurizeed to control that probe contacts with pixel, and its contact condition is observed by the view window 18 outer displays that have the microscope 19 of CCD camera 17 and link to each other 21 that place vacuum chamber 42 tops.For the ease of observing, microscopic fields of view center line and chip vertical line have an angle.
Infrared origin 2 is proofreaied and correct to the light path of chip 8 and is adjusted by internal focusing telescope 1.
Infrared origin 2 in the present embodiment is a blackbody radiation source, and radiation temperature 300-1000K is adjustable continuously, temperature-controlled precision reaches ± and 0.1 °.
Chip translation stage 11 in the present embodiment, parallel moving of signal platform 25 are made X, Y to moving by stepper motor 14-1,14-2,27-1,27-2 by 1/25 deceleration translation stage respectively, bearing accuracy is 2.5 μ m, maximum amount of movement 50mm, travel speed 1mm/s-0.01mm/s.Can deliver to center, infrared radiation visual field to chip by the mobile of chip translation stage 11, and contact with grounded probe.Parallel for trying to achieve array chip pixel electrode line with the signal probe motion track, improve the probe location efficiency, chip translation stage 11 is equipped with can be around the device of Z axle horizontal rotation, this device is linked to each other with universal shaft 12 1 ends in the vacuum chamber by the outer operating rod 13 of vacuum chamber, and the other end of universal shaft links to each other with the chip translation stage.Regulating the chip translation stage by operating rod 13 rotates around the Z axle horizontal.
It is by set screw the probe springs sheet to be pressurizeed to control that the probe of the signal probe frame 22 in the present embodiment, grounded probe frame 23, cross-talk probe carriage 24 contacts with pixel, in a single day pressure adjust each probe constant pressure that is depressed, need not contact point adjusting one by one, guarantee that each probe contacts with electrode well, does not damage electrode.Signal probe frame 22, grounded probe frame 23, cross-talk probe carriage 24 link to each other with an end of universal shaft 28,29,32 respectively, the other end of universal shaft links to each other with operating rod 30,31,33 on the vacuum chamber lateral wall, when measuring, control respectively by operating rod each probe carriage probe lift and depress two kinds of duties.
V-I characteristic view, lock-in amplifier, LCR test view that measuring-signal in the present embodiment is delivered to surveying instrument 43 by probe respectively through shielding line, signal binding post 39 are measured, and obtain parameters such as pixel family curve, the corresponding rate of electric current, zero-bias resistance.The temperature of Dewar cold head 10 is drawn from signal binding post 39 by temperature detecting resistance 44, delivers to the temperature measurer of surveying instrument 43 and measures.Illuminating lamp 17, stepper motor 14-1,14-2, the required power supply of 17-1,17-2 are respectively by power-line terminal 38 acquisition that links to each other with the vacuum chamber external power source.
The utlity model has following beneficial effect:
1. this measurement mechanism is put in the vacuum electromagnetic screened room, guarantee the chip under test surface not frost, Do not have the oil contamination and preferably effectiveness is arranged;
2. the chip translation stage of this measurement mechanism and probe translation platform drive with stepper motor, and be mobile fixed The position precision is fit to the survey to array chip pixel electrode diameter 10 μ m～30 μ m up to ± 2.5 μ m Amount;
3. the probe of the probe carriage of this measurement mechanism and pixel electrode contact are good, in measuring process In, need not one by one contact point adjusting, improved operating efficiency.
Because above beneficial effect, the utility model is fit to the test of fairly large array chip.
Claims (3)
1. the performance testing device of an infrared focal plane array detector chip, comprise infrared origin (2), on the direction of advancing along the infrared radiating light of infrared origin (2) emission, be equipped with light hurdle (3) successively, chopper wheel (4), 45 ° of catoptrons (7), the cooled cryostat (9) of band cold head (10), be equipped with chip (8) on the cold head (10), chip (8) top is equipped with microscope (19), and the output of all pixel signals of chip (8) is through the probe (22-1) of signal probe frame (22), the probe (23-1) of grounded probe frame (23), the probe (24-1) of cross-talk probe carriage (24) links to each other with surveying instrument (43);
It is characterized in that:
(1). said 45 ° of catoptrons (7), cooled cryostat (9), signal probe frame (22), grounded probe frame (23), cross-talk probe carriage (24) place in the electromagnetic screen vacuum chamber (42) that has cover plate of a geometric configuration; Vacuum chamber (42) sidewall is equipped with ZnS window (6) and 45 ° of catoptrons (7) on same horizontal line; 45 ° of catoptrons (7) vertical direction, vacuum chamber (42) end face is equipped with view window (18); Vacuum chamber (42) inner bottom part is equipped with the chip translation stage (11) of band stepper motor (14-1), (14-2), is equipped with the cooled cryostat (9) of band cold head (10) on the chip translation stage (11), is equipped with chip (8) on the cold head (10); In vacuum chamber (42) inner bottom part and chip translation stage (11) corresponding section, be equipped with parallel moving of signal platform (25) and the stationary platform (26) of band stepper motor (27-1), (27-2), be equipped with signal probe frame (22) on the parallel moving of signal platform, be equipped with grounded probe frame (23) and cross-talk probe carriage (24) on the stationary platform (26); Vacuum chamber (42) madial wall is equipped with illuminating lamp (17); The bottom is equipped with power-line terminal (38), signal binding post (39), mechanical pump bleeding point (40), molecular-sieve sorption pump bleeding point (41); Be equipped with the microscope (19) of band CCD camera (20) on view window (18), camera (20) links to each other with display (21);
(2). said cooled cryostat (9) top has a liquid nitrogen input pipe (1 5) to link to each other with vacuum chamber (42) sidewall liquid nitrogen input port (16), is equipped with temperature detecting resistance (44) on the cold head of cooled cryostat (10) and links to each other by the outer surveying instrument (43) of signal binding post (39) and vacuum chamber (42);
(3). said signal probe frame (22), grounded probe frame (23), cross-talk probe carriage (24) respectively with universal shaft (28), (29), (32) one ends link to each other, universal shaft (28), (29), (32) the other end respectively with the operating rod (30) of vacuum chamber (42) lateral wall, (31), (33) link to each other, make it when test, can pass through operating rod (30) respectively, (31), (33) probe (22-1) of control signal probe carriage (22), the probe (23-1) of grounded probe frame (23), the probe (24-1) of cross-talk probe carriage (24) lifts and depresses two kinds of duties;
(4). said cross-talk probe carriage (24) has operating rod (35), (37) at vacuum chamber (42) sidewall of putting that are connected with universal shaft (34), (36);
(5). said chip translation stage (11) has the operating rod (13) that places vacuum chamber (42) sidewall that is connected with universal shaft (12);
(6). be equipped with internal focusing telescope (1) before at infrared origin (2).
2. according to the performance testing device of the described infrared focal plane array detector chip of claim 1, it is characterized in that described liquid nitrogen input pipe (15) is connected by a plurality of phosphor bronze sylphon seals.
3. according to the described infrared focal plane array detector chip of claim 1 performance testing device, it is characterized in that described vacuum chamber (42) made by stainless steel material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99240032 CN2395283Y (en) | 1999-10-26 | 1999-10-26 | Property detector for infrared focal plane array probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99240032 CN2395283Y (en) | 1999-10-26 | 1999-10-26 | Property detector for infrared focal plane array probe |
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| Publication Number | Publication Date |
|---|---|
| CN2395283Y true CN2395283Y (en) | 2000-09-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99240032 Expired - Fee Related CN2395283Y (en) | 1999-10-26 | 1999-10-26 | Property detector for infrared focal plane array probe |
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| CN (1) | CN2395283Y (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515016B (en) * | 2008-02-22 | 2011-08-03 | 东京毅力科创株式会社 | Probe apparatus and probing method |
| CN103245859A (en) * | 2013-04-26 | 2013-08-14 | 中国科学院上海技术物理研究所 | Improved testing system and method for focal plane detector chip |
| CN104931509A (en) * | 2015-06-19 | 2015-09-23 | 中国科学院空间科学与应用研究中心 | Focusing plane positioning device and method of laser micro-beam back irradiation chip test |
| CN105092054A (en) * | 2015-07-28 | 2015-11-25 | 昆明物理研究所 | Testing evaluation device for pyroelectric non-refrigeration infrared focal plane detector |
| CN106680545A (en) * | 2016-12-30 | 2017-05-17 | 江苏中科君芯科技有限公司 | Dynamic test clamp for IGBT and FRD chips |
| CN106783658A (en) * | 2016-12-23 | 2017-05-31 | 江苏物联网研究发展中心 | Wafer scale infrared focus plane parameter test system |
| CN109084903A (en) * | 2018-06-15 | 2018-12-25 | 中国电子科技集团公司第十研究所 | Infrared focal plane detector pixel abatement detecting method |
| CN109814025A (en) * | 2019-03-18 | 2019-05-28 | 烟台睿创微纳技术股份有限公司 | Equipment that a kind of pair of wafer is tested, method and system |
| CN116298819A (en) * | 2023-04-19 | 2023-06-23 | 无锡兴华衡辉科技有限公司 | Imaging testing device of infrared detector chip |
-
1999
- 1999-10-26 CN CN 99240032 patent/CN2395283Y/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515016B (en) * | 2008-02-22 | 2011-08-03 | 东京毅力科创株式会社 | Probe apparatus and probing method |
| CN103245859A (en) * | 2013-04-26 | 2013-08-14 | 中国科学院上海技术物理研究所 | Improved testing system and method for focal plane detector chip |
| CN103245859B (en) * | 2013-04-26 | 2015-03-25 | 中国科学院上海技术物理研究所 | Improved testing system and method for focal plane detector chip |
| CN104931509A (en) * | 2015-06-19 | 2015-09-23 | 中国科学院空间科学与应用研究中心 | Focusing plane positioning device and method of laser micro-beam back irradiation chip test |
| CN105092054A (en) * | 2015-07-28 | 2015-11-25 | 昆明物理研究所 | Testing evaluation device for pyroelectric non-refrigeration infrared focal plane detector |
| CN106783658A (en) * | 2016-12-23 | 2017-05-31 | 江苏物联网研究发展中心 | Wafer scale infrared focus plane parameter test system |
| CN106680545A (en) * | 2016-12-30 | 2017-05-17 | 江苏中科君芯科技有限公司 | Dynamic test clamp for IGBT and FRD chips |
| CN109084903A (en) * | 2018-06-15 | 2018-12-25 | 中国电子科技集团公司第十研究所 | Infrared focal plane detector pixel abatement detecting method |
| CN109084903B (en) * | 2018-06-15 | 2020-06-26 | 中国电子科技集团公司第十一研究所 | Infrared focal plane detector pixel failure detection method |
| CN109814025A (en) * | 2019-03-18 | 2019-05-28 | 烟台睿创微纳技术股份有限公司 | Equipment that a kind of pair of wafer is tested, method and system |
| CN116298819A (en) * | 2023-04-19 | 2023-06-23 | 无锡兴华衡辉科技有限公司 | Imaging testing device of infrared detector chip |
| CN116298819B (en) * | 2023-04-19 | 2023-09-15 | 无锡兴华衡辉科技有限公司 | Imaging testing device of infrared detector chip |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |