CN2288462Y - Ultraviolet (i-ray) projection photoetching optical lens system - Google Patents
Ultraviolet (i-ray) projection photoetching optical lens system Download PDFInfo
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- CN2288462Y CN2288462Y CN 96232948 CN96232948U CN2288462Y CN 2288462 Y CN2288462 Y CN 2288462Y CN 96232948 CN96232948 CN 96232948 CN 96232948 U CN96232948 U CN 96232948U CN 2288462 Y CN2288462 Y CN 2288462Y
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- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- 238000001259 photo etching Methods 0.000 title claims abstract description 14
- 238000001459 lithography Methods 0.000 claims description 7
- 241000219739 Lens Species 0.000 claims 17
- 210000000695 crystalline len Anatomy 0.000 claims 17
- 230000005499 meniscus Effects 0.000 claims 1
- 230000004075 alteration Effects 0.000 description 10
- 230000004304 visual acuity Effects 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000000306 component Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Abstract
The utility model provides a novel ultraviolet (i line) shadow-penetrating photoetching optical lens system, can be used to realize half micron's photoetching resolution, the characteristics of this system are that entire system is formed by three kinds of typical optical structure (Triplet, two gausses type, pinea (Sonnar) deformation combination, make it have diffraction limit's resolution, the main parameter of this system (1), reduce multiplying power M = -1/5; (2), image field size 15mm x 15mm; (3), numerical aperture NA =0.5, (4), use wave band 365nm ~ 368nm (5), in the full field of view, relative distortion DT is less than or equal to 0.001%.
Description
The utility model is a kind of ultraviolet (i line) projection lithography optical lens system, is applicable to half micron-sized photolithography resolution, belongs to the light projection photoetching objective lens technical field of shadow-mark litho machine.
Lithographic objective is the core component of projection mask aligner, and photolithography resolution has determined the microelectronic component integrated level, and the development of photoetching Liar promotes the upgrading of litho machine.At present, China has only best result to distinguish that power is that 0.7～0.8 micron i linear light is carved the report of object lens (referring to " optics journal " Vol.15, No.3 (1995) is p.347～351), the structure of this lens combination is that two exemplary lens groups constitute two telecentric systems, numerical aperture NA=0.42.The light field of this system is in the middle of two typical lens combination, clear aperture is bigger herein, if increase numerical aperture with this kind structure, then near the positive lens number the light hurdle needs to increase, go up the angle pencil of ray aberration by the axle that positive lens brings, former using away from the negative lens on light hurdle proofreaied and correct, and then the aberration of the outer angle pencil of ray of axle can't obtain balance, just is difficult to then realize that photolithography resolution is 0.5 micron a technical indicator.
The utility model purpose, exactly in order to improve the deficiency of existing ultraviolet light projection photoetching optical lens system, projection mask aligner for development China microelectronic component, manufacturing a new generation (resolving power is 0.5 micron) provides a kind of ultraviolet light projection photoetching optical lens system that can be used for light projection photoetching objective lens manufacturing usefulness.
The purpose of this utility model is reached by following measure: a kind of ultraviolet light projection photoetching optical lens system, it is characterized in that combining by three typical optical textures (three types, double gauss type and Sonnar types) distortion, be divided into preceding group, middle group, three lens combination of back group, and a smooth hurdle is set in the middle of middle group.
The purpose of this utility model also can be reached by following measure: preceding group in the optical system is the modified of typical three type object lens (Triplet), is a negative lens in the middle of former three types, now is divided into two; Middle group is the complicated of double gauss type, and in the middle of this group the light hurdle is set; The back group is the improvement of Sonnar (Sonnar) type, and an aplanat lens is arranged in the middle of this group.
The compared with the prior art maximum characteristics of forming by above measure of ultraviolet light projection photoetching optical lens system are, the light hurdle is moved on in the middle of double gauss type (middle group) the mirror group, when the double gauss type complicated, when realizing that optical system adds large-numerical aperture, at place, light hurdle corrective system angle pencil of ray aberration, can make the angle pencil of ray aberration of whole image field obtain isostatic correction.Simultaneously, the object space of this lens combination, promptly preceding the group adopted the modified of three types, and it is to the aberration advantageous particularly of the outer light pencil of axis calibration, and bending of these group lens is bigger to the influence of off-axis ray.
Its reduction magnification of ultraviolet light projection photoetching optical lens system M=-1/5 of Zu Chenging like this; Image field is of a size of 15mm * 15mm; Numerical aperture NA=0.5; The optics wave aberration is all less than quarter-wave; In full visual field, when spatial frequency is 1000 pairs of lines per millimeters, optical-modulation transfer function MTF 〉=0.46; In full visual field, DT≤0.001% relatively distorts; Can realize that resolving power is 0.5 micron a projection lithography.
Description of drawings:
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is the utility model wave aberration curve map;
Fig. 3 is the utility model optical transfer function curve map;
Fig. 4 is the utility model optical distortion curve map.
Below in conjunction with drawings and Examples the utility model concrete structure is described in detail:
This ultraviolet light projection photoetching optical lens system is made of 21 optical elements, is divided into three lens combination; Preceding group, middle group, back group.Preceding group is the modified by typical three type object lens (Triplet), form by 6 optical elements (1), (2), (3), (4), (5) and (6), in the middle of former three types is a negative lens, now is divided into two (2) (3), its role is to the outer light pencil aberration of axis calibration; Middle group is the complicated of double gauss type, is made up of 10 optical elements (7), (8), (9), (10), (11), (12), (13), (14), (15), (16) He Guanglan (22), its role is to make the aberration of whole image field to obtain isostatic correction; The back group is the improvement of Sonnar (Sonnar) type, be made up of 5 optical elements (17), (18), (19), (20), (21), it makes picture side be telecentric beam path, and in the middle of this group an aplanat lens is arranged, form by (18) (19), greatly favourable to the numerical aperture that strengthens whole optical system.
By such ultraviolet light projection photoetching optical lens system, just can dwindle preceding group, middle group of object space figure process, back group lens combination 5 times and be imaged on the face of elephant, and can reach the resolving power of 0.5um.Also has following technical indicator simultaneously: image field size=15mm * 15mm; Numerical aperture NA=0.5; The optics wave aberration is all less than the quarter-wave (see figure 2); In full visual field, when spatial frequency is 1000 pairs of lines per millimeters, optical-modulation transfer function MTF 〉=0.46 (see figure 3); In full visual field, the DT that distorts relatively≤0.001% (see figure 4); Can realize that resolving power is 0.5 micron a projection lithography.
Claims (4)
1, a ultraviolet light projection photoetching optical lens system that comprises that optical element is formed, it is characterized in that being based on three typical optical textures: three types, double gauss type and the distortion of Sonnar type combine, and are divided into preceding group (1), (2), (3), (4), (5), (6); Middle (7), (8), (9), (10), (11), (12), (13), (14), (15), (16), (22) organized; Back group (17), (18), (19), (20), (21) three lens combination, and between middle group optical element (11) and (12), a smooth hurdle (22) is set,
2, by the projection lithography optical lens system of claim 1 regulation, it is characterized in that eyeglass (2), (3) are negative lens in the preceding group lens combination, (1), (4), (5) and (6) they are positive lens;
3, projection lithography optical lens system by claim 1,2 regulations, it is characterized in that three negative lenses (10), (11) and (14) are arranged in middle group of lens combination, a balsaming lens is by (12) and (13), a meniscus shaped lens and five positive lenss: (9), (7), (8), (15) and (16);
4, projection lithography optical lens system by claim 1,2,3 regulations, it is characterized in that having an aplanat lens to be made up of (18) and (19) in the group lens combination of back, telecentric beam path in image space is realized with eyeglass (21) in a negative lens (20) and two positive lenss (17), (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96232948 CN2288462Y (en) | 1996-04-10 | 1996-04-10 | Ultraviolet (i-ray) projection photoetching optical lens system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96232948 CN2288462Y (en) | 1996-04-10 | 1996-04-10 | Ultraviolet (i-ray) projection photoetching optical lens system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2288462Y true CN2288462Y (en) | 1998-08-19 |
Family
ID=33909758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96232948 Expired - Fee Related CN2288462Y (en) | 1996-04-10 | 1996-04-10 | Ultraviolet (i-ray) projection photoetching optical lens system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2288462Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1295566C (en) * | 2002-05-03 | 2007-01-17 | 卡尔蔡司Smt股份公司 | Very high-aperture projection objective |
| CN1324342C (en) * | 2002-04-17 | 2007-07-04 | 尼康株式会社 | Optical projection system, exposure device and method |
| CN100462844C (en) * | 2002-08-23 | 2009-02-18 | 株式会社尼康 | Projection optical system and method for photolithography and exposure apparatus and method using same |
| CN103499876A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院光电技术研究所 | Pure refraction type projection optical system with large numerical aperture |
-
1996
- 1996-04-10 CN CN 96232948 patent/CN2288462Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1324342C (en) * | 2002-04-17 | 2007-07-04 | 尼康株式会社 | Optical projection system, exposure device and method |
| CN1295566C (en) * | 2002-05-03 | 2007-01-17 | 卡尔蔡司Smt股份公司 | Very high-aperture projection objective |
| CN100462844C (en) * | 2002-08-23 | 2009-02-18 | 株式会社尼康 | Projection optical system and method for photolithography and exposure apparatus and method using same |
| CN103499876A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院光电技术研究所 | Pure refraction type projection optical system with large numerical aperture |
| CN103499876B (en) * | 2013-10-10 | 2015-07-29 | 中国科学院光电技术研究所 | Pure refraction type projection optical system with large numerical aperture |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |