CN221226221U - Intelligent power module packaging structure capable of avoiding bonding wire from being inclined - Google Patents
Intelligent power module packaging structure capable of avoiding bonding wire from being inclined Download PDFInfo
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- CN221226221U CN221226221U CN202323002109.2U CN202323002109U CN221226221U CN 221226221 U CN221226221 U CN 221226221U CN 202323002109 U CN202323002109 U CN 202323002109U CN 221226221 U CN221226221 U CN 221226221U
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 10
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- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
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- 239000003518 caustics Substances 0.000 description 1
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- 238000005253 cladding Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses an intelligent power module packaging structure for preventing bonding wires from being skewed, and belongs to the technical field of semiconductors; the lead frame comprises a first connecting part and a second connecting part; a substrate, the upper surface of which is connected with the second connecting part; the driving chip is connected with the first connecting part and is connected with the first connecting part through a bonding wire; the power chip is connected with the upper surface of the substrate, and the driving chip, the second connecting part and the power chip are connected through bonding wires. The beneficial effects of the technical scheme are as follows: due to the adoption of the technical scheme, the hidden danger that the bonding wires are inclined in the manufacturing process of the intelligent power module is avoided, the bonding wires are effectively prevented from collapsing, and the production yield is improved.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to an intelligent power module packaging structure capable of preventing bonding wires from being skewed.
Background
The intelligent power module (IPM, INTELLIGENT POWER MODULE) is a power-driven semiconductor device combining power electronics and integrated circuit technology, and can automatically realize complex protection functions such as overcurrent, undervoltage, short circuit and the like, and the IPM is a typical hybrid IC (INTEGRATED CIRCUIT ) packaging structure, which packages a plurality of chips containing power devices, driving, protecting and controlling circuits in the same housing after connecting the chips, thereby forming a relatively independent power module with partial or complete functions.
Compared with a common IGBT (Insulated Gate Bipolar Transistor ) module, the built-in drive and protection circuit of the IPM ensures that a system hardware circuit is simple and reliable, shortens the development time of the system, improves the self-protection capability under faults, and ensures that the system performance and the reliability are further improved.
In the prior art, along with the increase of electrical connection requirements, the connection length and the span of a single bonding wire inside a module are larger and larger, and the distance between adjacent bonding wires is smaller and smaller, so that the bonding wire is easy to skew in the module manufacturing process, the bonding wire is broken and collapses, and the production yield is reduced.
Disclosure of utility model
The utility model aims to provide an intelligent power module packaging structure for preventing bonding wires from being skewed, which solves the technical problems;
An intelligent power module packaging structure for preventing bonding wires from being skewed, comprising,
A lead frame including a first connection portion and a second connection portion;
a substrate, the upper surface of which is connected with the second connecting part;
the driving chip is connected with the first connecting part and is connected with the first connecting part through a bonding wire;
The power chip is connected with the upper surface of the substrate, and the driving chip, the second connecting part and the power chip are connected through the bonding wire.
Preferably, the outer surface of the bonding wire is provided with a coating layer.
Preferably, the driving chip includes a first integrated circuit driving chip and a second integrated circuit driving chip.
Preferably, the power chip includes an insulated gate bipolar transistor chip and a flywheel diode chip.
Preferably, the insulated gate bipolar transistor chip and the freewheeling diode chip are connected through the bonding wire.
Preferably, the substrate comprises a substrate having a plurality of substrates,
A second metal layer;
An intermediate insulating layer located above the second metal layer;
and the first metal layer is positioned above the intermediate insulating layer.
Preferably, the first metal layer and the second metal layer are each made of a copper material.
Preferably, the bond wires are made of copper or gold or silver material.
Preferably, the electronic device further comprises a housing, wherein the first connecting part, the second connecting part, the substrate, the driving chip and the power chip are arranged in the housing;
At least a portion of the lead frame extends outside the housing to form a pin.
Preferably, the interior of the housing is provided with an epoxy resin.
The beneficial effects of the utility model are as follows: due to the adoption of the technical scheme, the hidden danger that the bonding wires are inclined in the manufacturing process of the intelligent power module is avoided, the bonding wires are effectively prevented from collapsing, and the production yield is improved.
Drawings
FIG. 1 is a side view of a smart power module package structure of the present utility model;
fig. 2 is a cross-sectional view of a bond wire covered with a cladding layer in accordance with the present utility model.
In the accompanying drawings: 1. a lead frame; 2. a driving chip; 3. a bonding wire; 4. a power chip; 4a, insulated gate bipolar transistor chip; 4b, a freewheeling diode chip; 5. an epoxy resin; 6. a substrate; 6a, a first metal layer; 6b, an intermediate insulating layer; 6c, a second metal layer; 7. and a coating layer.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that, without conflict, the embodiments of the present utility model and features of the embodiments may be combined with each other.
The utility model is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
An intelligent power module packaging structure for preventing bonding wires from being skewed, as shown in figures 1 and 2, comprises,
A lead frame 1, the lead frame 1 including a first connection portion and a second connection portion;
A substrate 6, the upper surface of the substrate 6 being connected to the second connection portion;
The driving chip 2 is connected with the first connecting part, and the driving chip 2 is connected with the first connecting part through a bonding wire 3;
The power chip 4 is connected with the upper surface of the substrate 6, and the driving chip 2, the second connecting part and the power chip 4 are connected through bonding wires 3.
Specifically, the utility model provides an intelligent power module packaging structure for preventing bonding wires from being skewed, which comprises a substrate 6, a lead frame 1, a driving chip 2, a power chip 4 and bonding wires 3, wherein the situation that the bonding wires 3 are skewed can be effectively prevented, so that the possibility of short circuit is reduced, and the production yield is improved.
In a preferred embodiment, the outer surface of the bond wire 3 is provided with a coating 7, the coating 7 being made of an insulating material.
In particular, the coating 7 is made of an insulating compound, has a low dielectric constant, and enables insulating isolation between adjacent bonding wires 3, between the bonding wires 3 and the lead frame 1, avoiding short circuits.
Further specifically, the insulating compound may be rapidly cured by non-direct contact means, such as radiation, and the like, and the coating 7 is formed by curing the insulating compound, the coating 7 providing additional mechanical support to the bond wires 3, reducing the likelihood of the bond wires 3 collapsing and breaking during module fabrication.
In a preferred embodiment, the driver chip 2 comprises a first integrated circuit driver chip and a second integrated circuit driver chip.
Specifically, the first integrated circuit driving chip is a high voltage integrated circuit driving chip, i.e., an HVIC chip, and the second integrated circuit driving chip is a low voltage integrated circuit driving chip, i.e., an LVIC chip.
Further specifically, the driving chip 2 can integrate a plurality of functional modules on one chip, so that the integration level of the system is improved, and the volume and weight of the system are reduced; the method has higher working frequency and processing capacity, and can provide higher performance and response speed.
More specifically, the driving chip 2 adopts a low-power consumption design, so that energy sources can be saved during working, the service life of a battery can be prolonged, and the energy consumption of a system can be reduced; the driving chip 2 has higher anti-interference capability and stability, can work normally under severe environmental conditions, and improves the reliability and stability of the system; the driving chip 2 provides various interfaces and communication protocols, can perform rapid and stable data transmission and communication with other devices, and is convenient for interconnection and intercommunication of the system.
In a preferred embodiment, the power chip 4 comprises an insulated gate bipolar transistor chip 4a and a freewheeling diode chip 4b; the insulated gate bipolar transistor chip 4a and the flywheel diode chip 4b are connected by a bonding wire 3.
Specifically, the insulated gate bipolar transistor chip 4a is an IGBT chip, and the flywheel Diode chip 4b is a Diode chip.
Further specifically, the insulated gate bipolar transistor chip 4a has the characteristics of high switching speed and low on-resistance, and can improve the power conversion efficiency; and the insulated gate bipolar transistor chip 4a has higher voltage withstand capability and anti-interference capability, so that the reliability of the circuit can be improved.
Still more specifically, the flywheel diode chip 4b can provide low on-resistance and quick recovery characteristics, and can reduce power loss.
In a preferred embodiment, the substrate 6 comprises,
A second metal layer 6c;
An intermediate insulating layer 6b located above the second metal layer 6 c;
the first metal layer 6a is located above the intermediate insulating layer 6 b.
Specifically, the substrate 6 is composed of a metal layer and an insulating layer, wherein the insulating layer plays a role of insulation, and the metal layer can prevent the insulating layer from being directly contacted with corrosive substances, so that the corrosion resistance of the substrate 6 is improved; the superposition of the metal layer and the insulating layer can improve the mechanical strength of the substrate 6, the substrate 6 with a three-layer structure can provide better mechanical support performance, the structural strength of the device is enhanced, and the damage caused by external stress is reduced; the metal layer has good conductivity, and can improve the conductivity of the substrate 6, so that the metal layer can be widely applied to electronic equipment.
Further specifically, the intermediate insulating layer 6b can play a role in isolating noise, reducing the influence of external electromagnetic interference on the device, and improving the stability and reliability of signals.
In a preferred embodiment, the first metal layer 6a and the second metal layer 6c are each made of a copper material.
In particular, copper is an excellent conductive material having advantages of low resistance and high conductivity, and thus, a metal layer made of copper material can effectively conduct current, reducing resistance loss.
Further specifically, copper can rapidly conduct heat to the surrounding environment, so that the normal working temperature of electronic equipment is maintained, copper has high oxidation resistance, oxidation corrosion can be effectively resisted, and the service life of the metal layer is prolonged.
Further specifically, the copper material has good plasticity, can be conveniently processed and molded, meets the requirements of metal layers with different shapes and sizes, and in addition, the metal layer made of the copper material can reduce negative influence on environment and promote sustainable development.
In a preferred embodiment, the bond wires 3 are made of copper or gold or silver material.
Specifically, the bonding wire 3 is made of copper or gold or silver or any suitable conductive material, the manufacturing materials are easy to replace, the production is facilitated, copper, gold and silver have good chemical stability and corrosion resistance, stable conductive performance can be maintained in long-term use, and the bonding wire is not easy to be influenced by external environment.
Further specifically, copper, gold and silver have good soldering properties, can be reliably soldered with other electronic components, ensure good contact and connection between the bonding wire 3 and other components, reduce heat generation and conduction, and improve the working efficiency and stability of the components.
Still more particularly, copper, gold and silver have good workability, and bonding wires 3 of various shapes and sizes can be manufactured through different processing processes, meeting the demands of different applications.
In a preferred embodiment, the device further comprises a housing 8, wherein a first connecting part, a second connecting part, a substrate 6, a driving chip 2 and a power chip 4 are arranged in the housing 8;
At least a part of the lead frame 1 extends out of the outer shell 8 to form pins;
the interior of the housing 8 is provided with an epoxy resin 5.
Specifically, the first connection portion, the second connection portion, the substrate 6, the driving chip 2, and the power chip 4 are packaged by the housing 8, and the epoxy resin 5 is provided inside the housing 8, so that the semiconductor chip can be protected and fixed.
Further specifically, the epoxy resin 5 has good insulating property and chemical corrosion resistance, can effectively protect the semiconductor chip from the influence of external environment, and prolongs the service life of the semiconductor chip; the epoxy resin 5 has higher mechanical strength, can provide good supporting and protecting effects, and can prevent the semiconductor chip from being damaged by external impact or vibration; the epoxy resin 5 has good thermal conductivity, can help the semiconductor chip to dissipate heat effectively, reduce the chip temperature, and improve the working stability and reliability.
Further specifically, the epoxy resin 5 has good sealing performance, can effectively prevent moisture, dust and other harmful substances from entering the packaging structure, and protects the semiconductor chip from pollution and corrosion; the epoxy resin 5 has better fluidity and plasticity, is convenient for injection, filling and solidification in the packaging process, and improves the production efficiency and the product quality.
In summary, the application provides an intelligent power module packaging structure for preventing bonding wires from being skewed, which is mainly used for packaging semiconductors, wherein a substrate 6, a lead frame 1, a driving chip 2, a power chip 4 and the bonding wires 3 are packaged through a shell 8 and are filled with epoxy resin 5, so that adjacent bonding wires 3, bonding wires 3 and the lead frame 1 are effectively isolated in an insulating manner, and the possibility of short circuit is effectively reduced; the cured insulating coating 7 provides additional mechanical support for the bond wires 3 so that the smart power module avoids the bond wires 3 collapsing and breaking during the manufacturing process.
The foregoing description is only illustrative of the preferred embodiments of the present utility model and is not to be construed as limiting the scope of the utility model, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations of the present utility model, and are intended to be included within the scope of the present utility model.
Claims (10)
1. An intelligent power module packaging structure for preventing bonding wires from being skewed is characterized by comprising,
A lead frame (1), the lead frame (1) comprising a first connection portion and a second connection portion;
A substrate (6), wherein the upper surface of the substrate (6) is connected with the second connection part;
The driving chip (2) is connected with the first connecting part, and the driving chip (2) is connected with the first connecting part through a bonding wire (3);
And the power chip (4) is connected with the upper surface of the substrate (6), and the driving chip (2), the second connecting part and the power chip (4) are connected through the bonding wire (3).
2. The smart power module package structure for avoiding wire bond skew of claim 1, wherein an outer surface of the wire bond (3) is provided with a coating (7).
3. The smart power module package structure avoiding bond wire skew of claim 1, wherein the driver chip (2) comprises a first integrated circuit driver chip and a second integrated circuit driver chip.
4. The smart power module package structure avoiding bond wire skew of claim 1, wherein the power chip (4) comprises an insulated gate bipolar transistor chip (4 a) and a freewheeling diode chip (4 b).
5. The smart power module packaging structure avoiding bond wire skew of claim 4, wherein the insulated gate bipolar transistor chip (4 a) and the freewheeling diode chip (4 b) are connected by the bond wire (3).
6. The smart power module package structure avoiding bond wire skew according to claim 1, wherein the substrate (6) comprises,
A second metal layer (6 c);
an intermediate insulating layer (6 b) located above the second metal layer (6 c);
A first metal layer (6 a) located above the intermediate insulating layer (6 b).
7. The smart power module packaging structure avoiding wire bond skew of claim 6, wherein the first metal layer (6 a) and the second metal layer (6 c) are each made of a copper material.
8. The smart power module package structure avoiding wire bond skew of claim 5, wherein the wire bond (3) is made of copper or gold or silver material.
9. The smart power module packaging structure for preventing bonding wires from being skewed according to claim 1, further comprising a housing (8), wherein the first connection portion, the second connection portion, the substrate (6), the driving chip (2) and the power chip (4) are disposed inside the housing (8);
At least a part of the lead frame (1) extends out of the outer shell (8) to form pins.
10. The smart power module package structure avoiding wire bond skew of claim 9, wherein an interior of the housing (8) is provided with an epoxy resin (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323002109.2U CN221226221U (en) | 2023-11-07 | 2023-11-07 | Intelligent power module packaging structure capable of avoiding bonding wire from being inclined |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323002109.2U CN221226221U (en) | 2023-11-07 | 2023-11-07 | Intelligent power module packaging structure capable of avoiding bonding wire from being inclined |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221226221U true CN221226221U (en) | 2024-06-25 |
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ID=91579863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323002109.2U Active CN221226221U (en) | 2023-11-07 | 2023-11-07 | Intelligent power module packaging structure capable of avoiding bonding wire from being inclined |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221226221U (en) |
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2023
- 2023-11-07 CN CN202323002109.2U patent/CN221226221U/en active Active
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