CN221134497U - Silicon carbide wafer cutting device - Google Patents
Silicon carbide wafer cutting device Download PDFInfo
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- CN221134497U CN221134497U CN202322172500.0U CN202322172500U CN221134497U CN 221134497 U CN221134497 U CN 221134497U CN 202322172500 U CN202322172500 U CN 202322172500U CN 221134497 U CN221134497 U CN 221134497U
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 44
- 238000005520 cutting process Methods 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 59
- 238000012545 processing Methods 0.000 claims abstract description 32
- 230000007246 mechanism Effects 0.000 claims description 24
- 238000013519 translation Methods 0.000 claims description 18
- 230000010287 polarization Effects 0.000 abstract description 4
- 230000009471 action Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 32
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model provides a silicon carbide wafer cutting device, which comprises a supporting seat, a laser device and a processing platform, wherein the supporting seat is provided with a plurality of laser holes; the laser device is arranged on the supporting seat and comprises a laser, a laser beam expander, a first reflecting mirror, a second reflecting mirror and a multi-focus infrared objective lens, pulse laser emitted by the laser expands beams through the laser beam expander, then sequentially reflects the pulse laser to the multi-focus infrared objective lens through the first reflecting mirror and the second reflecting mirror, and forms a plurality of focuses which are shot to the silicon carbide wafer after passing through the multi-focus infrared objective lens after expanding the beams. The three-dimensional path of the pulse laser can be adjusted through the secondary reflection action of the first reflecting mirror and the second reflecting mirror, so that the pulse laser can enter the multi-focus infrared objective lens along the optical axis of the multi-focus infrared objective lens; forming at least one focus by the pulse laser after passing through the multi-focus infrared objective lens; the multi-focus infrared objective lens is adopted, parameters such as the number of focuses, the focal distance and the like can be changed by utilizing the polarization state of light, the light path is simple and stable, and the cost is reduced.
Description
Technical Field
The utility model relates to the technical field of semiconductor processing, in particular to a silicon carbide wafer cutting device.
Background
With the continuous development of the technology for preparing the third-generation semiconductor materials, the third-generation semiconductor materials including silicon carbide are gradually replacing the silicon power devices with the unique performances. Wafer dicing is an indispensable step in the silicon carbide chip manufacturing process. At present, silicon carbide wafer cutting mainly comprises a cutter wheel and a laser cutting mode. The contact machining method of knife flywheel cutting has natural limitations due to the superhard property of silicon carbide. The laser processing has the advantages of small cutting loss and the like as non-contact processing. At present, the laser cutting of the wafer is mainly based on the hidden cutting technology, namely, a focus is focused in the wafer, so that the surface nondestructive cutting is realized.
The hidden cutting technology includes a single focus hidden cutting technology and a multi focus hidden cutting technology. The single focus undercut technique is to focus the laser beam into the silicon carbide wafer with a common objective lens, which is limited by the cut thickness. The multifocal hidden-cut technique solves the problem of limited cut thickness. The multi-focal undercut technology of silicon carbide wafers currently being used industrially is mainly implemented by Spatial Light Modulators (SLMs) or Deformable Mirrors (DMs). The technical difficulties required for both of these methods are great, extremely high demands are placed on the quality of the device manufacturer, and the cost of spatial light modulators is very expensive. And because of the high precision nature of spatial light modulators and deformable mirrors, they need to be optimized often and are very fragile in industrial environments and are not suitable for industrial mass production.
Disclosure of utility model
The utility model provides a silicon carbide wafer cutting device, which has simple and stable light path and can effectively reduce cost.
The utility model provides a silicon carbide wafer cutting device which is used for processing a silicon carbide wafer and comprises a supporting seat, a laser device and a processing platform;
The processing platform is used for bearing a silicon carbide wafer;
The laser device is arranged on the supporting seat and comprises a laser, a laser beam expander, a first reflecting mirror, a second reflecting mirror and a multi-focus infrared objective lens, wherein pulse laser emitted by the laser is subjected to beam expansion through the laser beam expander and then sequentially reflected to the multi-focus infrared objective lens through the first reflecting mirror and the second reflecting mirror, and the pulse laser subjected to beam expansion passes through the multi-focus infrared objective lens to form at least one focus which is shot to the silicon carbide wafer.
The laser is a 50W picosecond infrared laser, the wavelength of pulse laser is 1064nm, the pulse width is 10ps, and the repetition frequency is 1MHz.
The laser device further comprises an objective lens adjusting frame, wherein the objective lens adjusting frame is a five-dimensional optical adjusting clamp used for adjusting the optical axis angle of the multi-focus infrared objective lens, and the multi-focus infrared objective lens is arranged on the objective lens adjusting frame.
The laser device further comprises a Z-axis linear driving mechanism and a sliding plate; the sliding plate is connected with the objective lens adjusting frame; the Z-axis linear driving mechanism is arranged on the supporting seat and connected with the sliding plate, so that the sliding plate drives the multi-focus infrared objective lens to move parallel to the optical axis of the multi-focus infrared objective lens.
Wherein, the objective lens adjusting frame is connected with the sliding plate through a supporting frame; the support frame includes diaphragm and wedge plate, the both ends of diaphragm respectively with objective alignment jig and sliding plate fixed connection, the wedge plate be fixed in the top of diaphragm, and with sliding plate fixed connection.
Wherein the second reflector is positioned between the first reflector and the Z-axis linear driving mechanism.
The laser device is arranged on the supporting plane, pulse laser emitted by the laser device is parallel to the supporting plane, and the pulse laser which passes through the laser beam expander and is reflected by the first reflecting mirror is parallel to the supporting plane; the pulse laser reflected by the second reflecting mirror is perpendicular to the supporting plane and enters the multi-focus infrared objective lens along the optical axis of the multi-focus infrared objective lens.
The laser device further comprises a beam expander clamp and a lifting adjusting mechanism, wherein the beam expander clamp is a five-dimensional optical adjusting clamp for adjusting the central shaft angle of the laser beam expander, and the laser beam expander is arranged on the beam expander clamp; the lifting adjusting mechanism is connected between the beam expander clamp and the supporting seat and used for adjusting the height of the beam expander clamp.
The laser device further comprises a first optical adjusting frame, a second optical adjusting frame, a first lifting adjusting frame, a second lifting adjusting frame, a first translation adjusting frame and a second translation adjusting frame, wherein the first reflecting mirror is arranged on the first optical adjusting frame, the first optical adjusting frame is used for adjusting the angle of the first reflecting mirror, the first lifting adjusting frame is connected between the first optical adjusting frame and the first translation adjusting frame, the first lifting adjusting frame is used for adjusting the height of the first reflecting mirror, and the first translation adjusting frame is used for adjusting the relative position of the first reflecting mirror and the supporting seat along the X axis; the second reflector is arranged on the second optical adjusting frame, the second optical adjusting frame is used for adjusting the angle of the second reflector, the second lifting adjusting frame is connected between the second optical adjusting frame and the second lifting adjusting frame, the second lifting adjusting frame is used for adjusting the height of the second reflector, the second lifting adjusting frame is used for adjusting the relative position of the second reflector and the supporting seat along an X axis, and the X axis is parallel to the supporting plane and perpendicular to the optical axis of the multi-focus infrared objective lens and pulse laser emitted by the laser.
The silicon carbide wafer cutting device further comprises a moving device, wherein the moving device comprises an X-axis linear motor and a Y-axis linear motor; the X-axis linear motor is connected to the processing platform and used for driving the processing platform to move along an X axis; the Y-axis linear motor is connected with the X-axis linear motor and used for driving the X-axis linear motor and the processing platform to move along the Y axis.
According to the silicon carbide wafer cutting device, the three-dimensional path of the pulse laser can be adjusted through the secondary reflection action of the first reflecting mirror and the second reflecting mirror, so that the pulse laser can enter the multi-focus infrared objective lens along the optical axis of the multi-focus infrared objective lens; the pulse laser after beam expansion passes through a multi-focus infrared objective lens to form at least one focus which is shot to the silicon carbide wafer; the multi-focus infrared objective lens is adopted, parameters such as the number of focuses, the focal distance and the like can be changed by utilizing the polarization state of light, the light path is simple and stable, the multi-focus infrared objective lens is suitable for various industrial production environments, and the operation difficulty of equipment is low. The equipment cost is reduced, the method is suitable for industrial mass production, and the production efficiency is greatly improved.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the embodiments are briefly described below, and the drawings in the following description are only drawings corresponding to some embodiments of the present utility model.
FIG. 1 is a schematic view of a silicon carbide wafer dicing apparatus according to a preferred embodiment of the present utility model;
fig. 2 is a schematic view of the silicon carbide wafer cutting apparatus of fig. 1 at another angle.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The words "first," "second," and the like in the terminology of the present utility model are used for descriptive purposes only and are not to be construed as indicating or implying relative importance and not as limiting the order of precedence.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
Referring to fig. 1 and 2, a silicon carbide wafer cutting apparatus is provided in a preferred embodiment of the present utility model, and is used for processing a silicon carbide wafer, and includes a support base 1, a laser device 2, a processing platform 3, and a moving device 4. The laser device 2 is arranged on the supporting seat 1 and is used for emitting pulse laser; the processing platform 3 is used for carrying a silicon carbide wafer. The moving device 4 is used for driving the processing platform 3 to move in the X axis and the Y axis, and the silicon carbide wafer to be cut is subjected to hidden cutting by using pulse laser.
The laser device 2 comprises a laser 21, a laser beam expander 22, a first mirror 23, a second mirror 24, and a multi-focal infrared objective 25. The pulse laser signal (hereinafter referred to as pulse laser) emitted by the laser 21 is expanded by the laser expander 22, and then sequentially reflected by the first mirror 23 and the second mirror 24 to the multi-focus infrared objective lens 25. By the secondary reflection of the first and second mirrors 23, 24, the three-dimensional path of the pulse laser light can be adjusted so as to enter the multi-focal infrared objective lens 25 along the optical axis of the multi-focal infrared objective lens 25. The expanded pulse laser beam passes through the multi-focal infrared objective lens 25 to form a plurality of focal points which are directed to the silicon carbide wafer. The number of the focuses may be set according to actual requirements (for example, the thickness of the cut wafer, the intensity of the laser light, etc. according to requirements), and may be 1, 2, or 4, etc., which is not limited herein, so that the pulse laser light after beam expansion forms at least one focus towards the silicon carbide wafer after passing through the multi-focus infrared objective lens 25. The multi-focus infrared objective lens 25 is adopted, parameters such as the number of focuses, the focus distance and the like can be changed by utilizing the polarization state of light, the light path is simple and stable, the device is suitable for various industrial production environments, and the operation difficulty of the device is low. The equipment cost is reduced, the method is suitable for industrial mass production, and the production efficiency is greatly improved.
The laser 21 provides ultra-fast pulsed laser light for a subsequent optical system. Preferably, the laser 21 is a 50W picosecond infrared laser 21, the pulse laser wavelength of which is 1064nm, the pulse width of which is 10ps, and the repetition frequency of which is 1MHz.
The laser 21 adopts the picosecond infrared laser 21, so that the processing efficiency is improved, and the cutting equipment is only provided with the first reflecting mirror 23 and the second reflecting mirror 24 which are matched with each other, and has no flying light path, so that the stability of the light path of the equipment is greatly improved, the productivity is improved, and the maintenance cost is reduced.
The supporting seat 1 is provided with a supporting plane 10, the laser 21 is arranged on the supporting plane 10, pulse laser emitted by the laser 21 is parallel to the supporting plane 10, and the pulse laser which is expanded by the laser expander 22 and reflected by the first reflecting mirror 23 is parallel to the supporting plane 10; the pulse laser light reflected by the second reflecting mirror 24 is perpendicular to the support plane 10 and enters the multi-focal infrared objective 25 along the optical axis of the multi-focal infrared objective 25. The laser 21 can be conveniently arranged by using the supporting plane 10, and the light path adjustment of the pulse laser is facilitated.
In this embodiment, the supporting plane 10 is parallel to the horizontal plane, and during the installation process of the silicon carbide crystal cutting device, the supporting plane 10 can be adjusted to be parallel to the horizontal plane, so that the optical path adjustment of the pulse laser between the first reflecting mirror 23 and the second reflecting mirror 24 and the multi-focus infrared objective lens 25 is facilitated.
The laser beam expander 22 is used for expanding the pulse laser emitted by the laser 21 and improving the divergence angle of the emitted pulse laser, so that the pulse laser can be transmitted in parallel in the transmission direction, and preferably, the laser beam expander 22 is a variable-magnification beam expander system, and the purpose of the laser beam expander is to provide the pulse laser with the optimal diameter for the subsequent optical system according to the actual processing requirement of the product.
The laser device 2 further comprises a beam expander jig 221 and a lift adjustment mechanism 222. The beam expander fixture 221 is a five-dimensional optical adjustment fixture for adjusting the central axis angle of the laser beam expander 22, the laser beam expander 22 is arranged on the beam expander fixture 221, and various dimensional adjustment of the laser beam expander 22 can be realized by utilizing the beam expander fixture 221, so that the light path precision is improved. The lifting adjusting mechanism 222 is connected between the beam expander fixture 221 and the supporting seat 1, and is used for adjusting the height of the beam expander fixture 221, so as to be beneficial to adjusting the height of the laser beam expander 22 to be consistent with the height of the light outlet of the laser 21. In the use process, the height positions of the beam expander fixture 221 and the laser beam expander 22 thereof can be adjusted by the lifting adjusting mechanism 222, so that the central axis of the laser beam expander 22 and the central axis of the light outlet of the laser 21 are positioned at the position with the same height, and then the central axis angle of the laser beam expander 22 is finely adjusted by the beam expander fixture 221, so that the central axis angle coincides with the light axis of the emitted pulse laser of the laser 21.
The pulsed laser light passing through the laser beam expander 22 enters the multi-focus infrared objective lens 25 through vertical adjustment of the first mirror 23 and the second mirror 24. Preferably, the pulsed laser light is transmitted as parallel as possible to the support plane 10 during the transmission of the laser 21 to the second mirror 24, facilitating the structural design of the overall device.
As shown in fig. 1, the laser device 2 further includes a first optical adjustment frame 231, a second optical adjustment frame 241, a first lift adjustment frame 232, a second lift adjustment frame 242, a first translation adjustment frame 233, and a second translation adjustment frame 243. The first mirror 23 is mounted on the first optical adjustment frame 231, and the first optical adjustment frame 231 is used for adjusting the angle of the first mirror 23, so that the first mirror 23 can change the optical path of the pulse laser light by 90 ° on the horizontal plane more precisely and emit the pulse laser light to the second mirror 24 along the direction parallel to the horizontal plane. The first elevation adjustment frame 232 is connected between the first optical adjustment frame 231 and the first translation adjustment frame 233, and the first elevation adjustment frame 232 is used for adjusting the height of the first reflecting mirror 23. The first translation adjusting frame 233 is used for adjusting the relative position of the first mirror 23 and the support base 1 along the X axis.
The second reflecting mirror 24 is mounted on the second optical adjusting frame 241, and the second optical adjusting frame 241 is used for adjusting the angle of the second reflecting mirror 24, so that the second reflecting mirror 24 can more accurately change the optical path of the pulse laser into 90 degrees, that is, change the horizontal direction into the vertical direction, and emit the pulse laser to the multi-focus infrared objective lens 25.
The second elevation adjustment frame 242 is connected between the second optical adjustment frame 241 and the second translation adjustment frame 243, and the second elevation adjustment frame 242 is used for adjusting the height of the second reflecting mirror 24. The second translation adjusting frame 243 is used for adjusting the relative position of the second reflecting mirror 24 and the supporting base 1 along an X-axis, which is parallel to the supporting plane 10 and perpendicular to the optical axis of the multi-focus infrared objective 25 and the pulse laser emitted by the laser.
In the use process, the first lifting adjusting frame 232 and the second lifting adjusting frame 242 can be utilized to adjust the height positions of the first reflecting mirror 23 and the second reflecting mirror 24, so that the centers of the first reflecting mirror 23 and the second reflecting mirror 24 are positioned at the position with the same height as the center of the laser beam expander 22; then, the first translation adjusting frame 233 is adjusted so that the first reflecting mirror 23 is positioned on the expanded pulse laser path, and the second translation adjusting frame 243 is adjusted so that the second reflecting mirror 24 is positioned directly above the multi-focus infrared objective lens 25, i.e., in the optical axis direction of the multi-focus infrared objective lens 25; the first optical adjusting frame 231 and the second optical adjusting frame 241 are used to fine tune the reflection angles of the first reflecting mirror 23 and the second reflecting mirror 24, so that the pulse laser can enter the multi-focus infrared objective lens 25 along the optical axis of the multi-focus infrared objective lens 25.
In this embodiment, the first optical adjustment frame 231 and the second optical adjustment frame 241 may be various jigs capable of adjusting the reflection angle of the reflecting mirror, and the first lifting adjustment frame 232 and the second lifting adjustment frame 242 are various mechanisms capable of adjusting the lifting height. The first translation adjusting frame 233 and the second translation adjusting frame 243 are various mechanisms capable of realizing linear position adjustment.
The pulse laser after beam expansion passes through the first reflecting mirror 23 and the second reflecting mirror 24 to be vertically regulated, passes through the multi-focus infrared objective lens 25 at a fixed angle (coinciding with the optical axis of the multi-focus infrared objective lens 25), and can change parameters such as the number of focuses, the focal distance and the like by utilizing the polarization state of light, so that the optical path is simple and stable, the operation difficulty of equipment is low, and the processing efficiency is improved.
In this embodiment, the laser device 2 further includes an objective lens adjusting frame 251, the objective lens adjusting frame 251 is a five-dimensional optical adjusting fixture for adjusting the angle of the optical axis of the multi-focus infrared objective lens 25, the multi-focus infrared objective lens 25 is disposed on the objective lens adjusting frame 251, and various dimensions of the multi-focus infrared objective lens 25 can be adjusted by using the objective lens adjusting frame 251, so that the central axis of the multi-focus infrared objective lens 25 is adjusted to be in a vertical state, and is parallel to the pulse laser reflected by the second reflecting mirror 24, thereby improving the light path precision.
The laser device 2 further comprises a Z-axis linear driving mechanism 26 and a sliding plate 27, the sliding plate 27 is connected with the objective lens adjusting frame 251, and the Z-axis linear driving mechanism 26 is arranged on the supporting seat 1 and connected with the sliding plate 27 so as to drive the multi-focus infrared objective lens 25 to move parallel to the optical axis thereof through the sliding plate 27. The multi-focus infrared objective 25 can be driven to move close to or away from the moving device 4 by the Z-axis linear driving mechanism 26 so as to achieve better processing effect. The Z-axis linear driving mechanism 26 may be a precision motor with a movement precision less than 1 micron, so as to implement a precise movement of the multifocal infrared objective lens 25 in the Z-axis.
The objective lens adjusting frame 251 is connected to the slide plate 27 through a support frame 28; the supporting frame 28 comprises a transverse plate 281 and a wedge-shaped plate 282, wherein two ends of the transverse plate 281 are respectively fixedly connected with the objective lens adjusting frame 251 and the sliding plate 27, and the wedge-shaped plate 282 is fixed on the top of the transverse plate 281 and is fixedly connected with the sliding plate 27. Through the support frame 28, a certain distance can be kept between the objective lens adjusting frame 251 and the sliding plate 27, so that a user can conveniently operate a knob of the objective lens adjusting frame 251. The cooperation of the cross plate 281 and the wedge plate 282 may improve the stability of the structure of the support 28. Preferably, wedge plate 282 is two parallel to each other to further enhance the structural stability of support 28.
The second reflector 24 is located between the first reflector 23 and the Z-axis linear driving mechanism 26, so that the Z-axis linear driving mechanism 26 is located at one side of the second reflector 24 away from the first reflector 23, and the light path between the first reflector and the second reflector is prevented from being blocked by the Z-axis linear driving mechanism 26.
The moving device 4 is located at the laser exit of the multi-focus infrared objective lens 25, and is used for driving the processing platform 3 to move in the X-axis and the Y-axis relative to the movement of the multi-focus infrared objective lens 25. The X-axis and the Y-axis are two mutually perpendicular directions, and both are perpendicular to the Z-axis, i.e. the optical axis of the multifocal infrared objective 25. In this embodiment, the X-axis and the Y-axis are two directions perpendicular to each other on a horizontal plane, and the Z-axis is vertical.
The moving device 4 includes an X-axis linear motor 41 and a Y-axis linear motor 42, wherein the X-axis linear motor 41 is connected to the processing platform 3 to drive the processing platform 3 to move along the X-axis, and the Y-axis linear motor 42 is connected to the X-axis linear motor 41 to drive the X-axis linear motor 41 and the processing platform 3 to move along the Y-axis. Preferably, the X-axis linear motor 41 and the Y-axis linear motor 42 are precision motors with a movement precision of less than 5 micrometers, so as to realize movement of the processing platform 3 in the X-axis and the Y-axis.
The processing platform 3 is a vacuum adsorption platform, and the silicon carbide wafer is covered on the vacuum adsorption platform, so that the silicon carbide wafer can be adsorbed on the processing platform 3, and the silicon carbide wafer and the processing platform cannot move relatively, so that the moving accuracy of the silicon carbide wafer is ensured.
In this embodiment, the moving device 4 may drive the processing platform 3 and the silicon carbide wafer to move in two directions perpendicular to each other on a horizontal plane, and the Z-axis linear driving mechanism 26 drives the multi-focus infrared objective lens 25 to move on the Z-axis, so as to implement three-dimensional movement of the silicon carbide wafer relative to the multi-focus infrared objective lens 25. The movement of the multi-focus infrared objective 25 is reduced by only moving the multi-focus infrared objective 25 in one direction, thereby improving the operation stability of the multi-focus infrared objective 25. Here, in other embodiments, the Z-axis linear driving mechanism 26 may also be configured as a part of the moving device 4, so that the moving device 4 may drive the silicon carbide wafer to move three-dimensionally relative to the multi-focus infrared objective lens 25, and the multi-focus infrared objective lens 25 may be directly fixed on the support base 1.
In summary, although the present utility model has been described in terms of the preferred embodiments, the above-mentioned embodiments are not intended to limit the utility model, and those skilled in the art can make various modifications and alterations without departing from the spirit and scope of the utility model, so that the scope of the utility model is defined by the appended claims.
Claims (7)
1. The silicon carbide wafer cutting device is characterized by comprising a supporting seat, a laser device and a processing platform;
The processing platform is used for bearing a silicon carbide wafer;
The laser device is arranged on the supporting seat and comprises a laser, a laser beam expander, a first reflecting mirror, a second reflecting mirror and a multi-focus infrared objective lens, wherein pulse laser emitted by the laser is subjected to beam expansion through the laser beam expander and then sequentially reflected to the multi-focus infrared objective lens through the first reflecting mirror and the second reflecting mirror, and the pulse laser subjected to beam expansion forms at least one focus which is shot to a silicon carbide wafer after passing through the multi-focus infrared objective lens;
The laser device also comprises an objective lens adjusting frame, a Z-axis linear driving mechanism and a sliding plate; the objective lens adjusting frame is a five-dimensional optical adjusting clamp for adjusting the angle of the optical axis of the multi-focus infrared objective lens, and the multi-focus infrared objective lens is arranged on the objective lens adjusting frame;
The Z-axis linear driving mechanism is arranged on the supporting seat and connected with the sliding plate so as to drive the multi-focus infrared objective lens to move parallel to the optical axis of the multi-focus infrared objective lens through the sliding plate;
The objective lens adjusting frame is connected with the sliding plate through a supporting frame; the support frame comprises a transverse plate and a wedge-shaped plate, two ends of the transverse plate are respectively and fixedly connected with the objective lens adjusting frame and the sliding plate, and the wedge-shaped plate is fixed at the top of the transverse plate and is fixedly connected with the sliding plate; the support frame enables a certain distance to be kept between the objective lens adjusting frame and the sliding plate.
2. The silicon carbide wafer cutting device of claim 1, wherein the laser is a 50W picosecond infrared laser having a pulse laser wavelength of 1064nm, a pulse width of 10ps, and a repetition rate of 1MHz.
3. The silicon carbide wafer cutting device of claim 1, wherein the second mirror is positioned between the first mirror and the Z-axis linear drive mechanism.
4. A silicon carbide wafer cutting device according to any of claims 1 to 3, wherein the support base has a support plane, the laser is disposed on the support plane, the pulsed laser emitted by the laser is parallel to the support plane, and the pulsed laser that passes through the laser beam expander and is reflected by the first mirror is parallel to the support plane; the pulse laser reflected by the second reflecting mirror is perpendicular to the supporting plane and enters the multi-focus infrared objective lens along the optical axis of the multi-focus infrared objective lens.
5. A silicon carbide wafer cutting device according to any of claims 1 to 3, wherein the laser device further comprises a beam expander fixture and a lifting adjustment mechanism, the beam expander fixture being a five-dimensional optical adjustment fixture for adjusting the angle of the central axis of the laser beam expander, the laser beam expander being disposed on the beam expander fixture; the lifting adjusting mechanism is connected between the beam expander clamp and the supporting seat and used for adjusting the height of the beam expander clamp.
6. The silicon carbide wafer cutting device of claim 4, wherein the laser device further comprises a first optical adjustment frame, a second optical adjustment frame, a first elevation adjustment frame, a second elevation adjustment frame, a first translation adjustment frame, and a second translation adjustment frame, the first mirror being mounted to the first optical adjustment frame, the first optical adjustment frame being configured to adjust an angle of the first mirror, the first elevation adjustment frame being connected between the first optical adjustment frame and the first translation adjustment frame, the first elevation adjustment frame being configured to adjust a height of the first mirror, the first translation adjustment frame being configured to adjust a relative position of the first mirror to the support base along an X-axis; the second reflector is arranged on the second optical adjusting frame, the second optical adjusting frame is used for adjusting the angle of the second reflector, the second lifting adjusting frame is connected between the second optical adjusting frame and the second lifting adjusting frame, the second lifting adjusting frame is used for adjusting the height of the second reflector, the second lifting adjusting frame is used for adjusting the relative position of the second reflector and the supporting seat along an X axis, and the X axis is parallel to the supporting plane and perpendicular to the optical axis of the multi-focus infrared objective lens and pulse laser emitted by the laser.
7. A silicon carbide wafer cutting device according to any of claims 1 to 3, further comprising a moving device comprising an X-axis linear motor and a Y-axis linear motor; the X-axis linear motor is connected to the processing platform and used for driving the processing platform to move along an X axis; the Y-axis linear motor is connected with the X-axis linear motor and used for driving the X-axis linear motor and the processing platform to move along the Y axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322172500.0U CN221134497U (en) | 2023-08-10 | 2023-08-10 | Silicon carbide wafer cutting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322172500.0U CN221134497U (en) | 2023-08-10 | 2023-08-10 | Silicon carbide wafer cutting device |
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| Publication Number | Publication Date |
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| CN221134497U true CN221134497U (en) | 2024-06-14 |
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| CN202322172500.0U Active CN221134497U (en) | 2023-08-10 | 2023-08-10 | Silicon carbide wafer cutting device |
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| CN (1) | CN221134497U (en) |
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2023
- 2023-08-10 CN CN202322172500.0U patent/CN221134497U/en active Active
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