CN220999809U - Magnetron sputtering equipment capable of compounding multiple power supplies - Google Patents
Magnetron sputtering equipment capable of compounding multiple power supplies Download PDFInfo
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- CN220999809U CN220999809U CN202322474578.8U CN202322474578U CN220999809U CN 220999809 U CN220999809 U CN 220999809U CN 202322474578 U CN202322474578 U CN 202322474578U CN 220999809 U CN220999809 U CN 220999809U
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- magnetron sputtering
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 33
- 238000013329 compounding Methods 0.000 title claims abstract description 14
- 238000002347 injection Methods 0.000 claims abstract description 50
- 239000007924 injection Substances 0.000 claims abstract description 50
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000013077 target material Substances 0.000 claims abstract description 8
- 238000005086 pumping Methods 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 30
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model discloses magnetron sputtering equipment capable of compounding multiple power supplies, and belongs to the technical field of ultrahigh vacuum coating equipment. The magnetron sputtering equipment capable of compounding various power supplies comprises a main cavity, wherein the main cavity is connected with a rapid sample injection cavity and a vacuum pumping system, three cathode sockets which are distributed in a regular triangle are arranged at the top of the main cavity, the three cathode sockets are respectively connected with a cathode I, a cathode II and a cathode III, the upper parts of the cathode I, the cathode II and the cathode III are connected with different or same types of power supplies, the power supplies are HIPIMS power supplies, direct current power supplies and RF power supplies, the lower part of the power supplies are sequentially provided with target materials and baffle plates, and a rotatable sample table is arranged inside the main cavity. The three independent cathode sockets arranged in the magnetron sputtering equipment are used for installing three cathodes, the power supplies connected with the cathodes are independent and replaceable, and independent baffles are arranged at the bottoms of the cathodes, so that the three cathodes can finish co-sputtering discharge and independent discharge work.
Description
Technical Field
The utility model belongs to the technical field of ultrahigh vacuum coating equipment, and particularly relates to magnetron sputtering equipment capable of compounding multiple power supplies.
Background
Compared with the traditional thermal evaporation coating technology, the magnetron sputtering technology has the advantages that the energy is 10-100 times higher than that of thermal evaporation in the ion beam sputtering process, the aggregation density of the film can be improved, the strength of the film layer can be increased, the adhesive force of the surface mixed material between the film layers can be improved, the high tensile stress in the film layer can be reduced, and the magnetron sputtering technology can be widely applied to film preparation of surface modification, decorative films, optical films, functional films, superconductive films and the like.
At present, the traditional magnetron sputtering equipment mainly finishes discharge sputtering by applying a power supply to a cathode, and generally only can finish the experimental task of one power supply discharge.
Disclosure of utility model
In order to overcome the defects in the prior art, the utility model aims to provide a magnetron sputtering coating device capable of compounding multiple power supplies, which can use the compound power supply to perform co-sputtering and can use a single target to perform sputtering.
In order to achieve the above purpose, the utility model is realized by adopting the following technical scheme:
The utility model discloses magnetron sputtering equipment capable of compounding multiple power supplies, which comprises a main cavity, wherein the main cavity is connected with a rapid sample injection cavity and a vacuum pumping system, three cathode sockets distributed in a regular triangle are arranged at the top of the main cavity, the three cathode sockets are respectively connected with a cathode I, a cathode II and a cathode III, and the cathode I, the cathode II and the cathode III are respectively compounded with different or same types of power supplies.
Preferably, the power sources are HIPIMS power source, direct current power source and RF power source.
Preferably, the lower parts of the cathode I, the cathode II and the cathode III are all provided with targets.
Further preferably, the lower parts of the targets are provided with baffles.
Preferably, a gate valve is arranged between the main cavity and the rapid sample injection cavity.
Preferably, a rotatable sample stage is provided inside the main chamber.
Preferably, the lower part of the main chamber is provided with a viewing window.
Further preferably, the viewing window inner layer is provided with a viewing window baffle.
Preferably, the rapid sample injection cavity is connected with a mechanical rod.
Preferably, the vacuum pumping system comprises a mechanical pump and a molecular pump, and the mechanical pump and the molecular pump are connected with the main cavity and the rapid sample injection cavity.
Compared with the prior art, the utility model has the following beneficial effects:
The magnetron sputtering equipment capable of compounding various power supplies is provided by the utility model, on the basis of a traditional magnetron sputtering coating cavity, three independent cathode sockets are designed for installing three cathodes, the power supplies connected with the three cathodes are independent and replaceable, independent baffles are arranged at the bottoms of the three cathodes, and the three independent cathodes can finish co-sputtering discharge and independent discharge work respectively by means of the independent baffles. And the vacuum pumping system is connected with the main cavity and comprises a mechanical pump and a molecular pump. In addition, the right side of the cavity is connected with the rapid sample injection cavity through a gate valve, and the rapid sample injection cavity can be used for replacing a sample holder under the condition that the main cavity is not opened. Compared with the existing magnetron sputtering equipment, the magnetron sputtering equipment performs co-sputtering by connecting different power supplies, so that the defects of poor binding force, low compactness, insufficient adhesive force and the like of a film base prepared by a single power supply can be overcome, the sputtering task can be completed more complicated, the utilization rate of a cavity is greatly improved, and the production efficiency is effectively improved.
Further, the symmetrical arrangement of the right triangle can ensure the uniformity of the film.
Drawings
Fig. 1 is a schematic view of a magnetron sputtering apparatus of the present utility model.
Wherein: 01-cathode I; 02-cathode II; 03-cathode iii; 04-baffle I; 05-baffle II; 06-baffle III; 07-a main chamber; 08-sample stage; 09-a rotating electric machine; 10-observation window; 11-gate valve; 12-a rapid sample injection cavity; 13-viewing window baffles.
Detailed Description
In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. The term "baffle" may also refer to "breaker". The term "rapid sample injection chamber" may also refer to "loadlock chambers".
The utility model is described in further detail below with reference to the attached drawing figures:
the magnetron sputtering equipment capable of compounding various power supplies provided by the utility model, as shown in fig. 1, comprises a main cavity 07, wherein the main cavity 07 is connected with a power supply, a rapid sample injection cavity 12 and a vacuumizing system.
A main chamber 07 for performing thin film sputtering. The main cavity 07 is cylindrical, and the top is provided with three cylindric negative pole sockets that are regular triangle and distribute, and negative pole I01, negative pole II 02 and negative pole III 03 are connected respectively to three negative pole socket, and the size of three negative poles is 2 inches preferably, inserts main cavity 07 with three independent negative poles through three negative pole sockets, forms a inclosed system. The upper parts of the cathode I01, the cathode II 02 and the cathode III 03 are connected with a power supply, the lower parts are provided with target materials, in the co-sputtering process, the three cathodes are compounded with different or same types of power supplies, the target materials are excited by power supply discharge to form plasmas, and the plasmas are deposited on a sample on the sample table 08 after being collided in the main cavity 07. The baffle I04 is arranged on the lower portion of the target material of the cathode I01, the baffle II 05 is arranged on the lower portion of the target material of the cathode II 02, the baffle III 06 is arranged on the lower portion of the target material of the cathode III 03, and the baffle I04, the baffle II 05 and the baffle III 06 are controlled to open and close by an air circuit, so that arbitrary independent discharge of the cathode is controlled in the sputtering process or co-sputtering is completed. The inside rotatable sample platform 08 that is provided with of main cavity 07, sample platform 08 below is connected with rotating electrical machines 09, and rotating electrical machines 09 is used for controlling sample platform 08 to carry out contrary/clockwise rotation to the homogeneity of film growth under the effective guarantee heating condition. An observation window 10 is arranged at the same height as the sample stage 08 at the lower part of the main cavity 07, and the observation window 10 is made of glass materials and is used for observing the real-time condition of the film growth of the sample stage. The inner layer of the observation window 10 is provided with an observation window baffle 13, and the observation window baffle 13 is closed in the sputtering process to prevent the sputtering from affecting the transparency of the observation window 10.
Power supplies, including HIPIMS power supply, direct current power supply (DC) and RF power supply, are three types. The HIPIMS power supply can generate high-energy ion beams through instant high voltage, so that the purpose of enhancing sputtering of substances on the surface of a target is achieved, the ionization degree of the surface of the target can be improved through the generated high voltage, and the sputtering rate and energy are increased. The high-power pulse power supply used by the direct-current power supply can effectively make up the defect of poor film base binding force caused by low ionization rate of the traditional magnetron sputtering metal, and is suitable for metal elements. The RF power supply uses an alternating current power supply to replace a direct current power supply to form an alternating current sputtering system, so that sputtering can be performed under lower air pressure, the sputtering rate is high, and a nonmetallic target can be sputtered. When in use, the corresponding power supply is selected according to the selected target material, and then the selected power supply is respectively compounded with the corresponding cathode to perform co-sputtering.
Be provided with push-pull valve 11 between quick advance appearance chamber 12 and the main cavity 07, push-pull valve 11 is used for insulating the gas circuit exchange between main cavity 07 and the quick advance appearance chamber 12, guarantees that the atmospheric pressure between main cavity 07 and the quick advance appearance chamber 12 is close, all is less than 10 2 Pa.
The rapid sample injection cavity 12 is used for rapidly taking and placing samples without opening the main cavity 07. The diameter of the rapid sample injection cavity 12 is 200+/-5 mm, the height is 100+/-5 mm, and samples are taken and placed through the small-volume rapid sample injection cavity 12, so that the time consumed in the vacuumizing process of the large-volume main cavity 07 can be reduced. The rapid sample injection cavity 12 is connected with a mechanical rod, and the mechanical rod can penetrate through the rapid sample injection cavity 12 to directly push the sample in the rapid sample injection cavity 12 to the main cavity 07.
And the vacuumizing system is used for ensuring the vacuum degree in the main cavity 07 and the rapid sample injection cavity 12 in the sputtering process. The vacuumizing system comprises a mechanical pump and a molecular pump, wherein the mechanical pump and the molecular pump are connected with the main cavity 07 and the rapid sample injection cavity 12 through pipelines, so that the inner spaces of the main cavity 07 and the rapid sample injection cavity 12 are in a vacuum environment.
The utility model provides a use method of a magnetron sputtering device capable of compounding multiple power supplies, which comprises the following specific steps:
1. Mounting
Selecting targets with different elements according to the requirements, then respectively loading the selected targets into the lower parts of the corresponding cathodes, and correspondingly selecting a proper power supply.
2. Placing a sample
And opening the vacuum pumping system, and opening the gate valve 11 when the air pressure of the rapid sample injection cavity 12 is close to that of the main cavity 07. Sample to be sputtered is put into the rapid sample injection cavity 12, the sample to be sputtered is pushed to the sample table 08 of the main cavity 07 by the rapid sample injection cavity 12 through a mechanical rod, the mechanical rod is removed, the gate valve 11 is closed, the baffle I04, the baffle II 05 and the baffle III 06 are opened, and argon is introduced into the main cavity 07.
3. Sputtering
The cathode is connected with a corresponding power supply, the vacuumizing condition in the main cavity 07 is continuously observed, the vacuum degree in the main cavity 07 is kept at about 10 -5 Pa, the power supply connected with the cathode is turned off or a baffle plate is turned off, the independent sputtering time of each cathode is adjusted, the working current is kept at about 20mA, a rotating motor 09 is turned on, a sample is driven by a sample table 08 to rotate, the power supply connected with the cathode is turned on, the corresponding cathodes are respectively supplied with power, sputtering is completed in a co-sputtering mode, the baffle plate 13 of the observation window is turned on, the discharge state of equipment is observed through the observation window 10, and after sputtering for a preset time, the power supply connected with the cathode is turned off.
Example 1
The magnetron sputtering equipment capable of compounding multiple power supplies comprises a main cavity 07, wherein the main cavity 07 is in a cylindrical shape, three cylindrical cathode sockets distributed in a regular triangle are arranged at the top of the main cavity 07, and the three cathode sockets are respectively connected with a cathode I01, a cathode II 02 and a cathode III 03 which are 2 inches. The upper part of the cathode I01 is connected with a HIPIMS power supply, the lower part of the cathode I is provided with a Ti target, and the lower part of the Ti target is provided with a baffle I04; the upper part of the cathode II 02 is connected with a DC power supply, the lower part of the cathode II 02 is provided with an Al target, and the lower part of the Al target is provided with a baffle II 05; the upper part of the cathode III 03 is connected with an RF power supply, the lower part of the cathode III is provided with a C target, the lower part of the C target is provided with a baffle III 06, and the baffle I04, the baffle II 05 and the baffle III 06 are controlled to open and close by an air circuit. A rotatable sample stage 08 is arranged in the main cavity 07, and a rotary motor 09 is connected below the sample stage 08. An observation window 10 made of glass material is arranged at the same height as the sample stage 08 at the lower part of the main cavity 07, and an observation window baffle 13 is arranged in the inner layer of the observation window 10. The main cavity 07 is connected with a rapid sample injection cavity 12, the diameter of the rapid sample injection cavity 12 is 200+/-5 mm, the height of the rapid sample injection cavity 12 is 100+/-5 mm, the rapid sample injection cavity 12 is connected with a mechanical rod, and the mechanical rod passes through the rapid sample injection cavity 12 to be arranged, so that samples in the rapid sample injection cavity 12 can be directly pushed to the main cavity 07. A gate valve 11 is arranged between the rapid sample injection cavity 12 and the main cavity 07, and the gate valve 11 can control gas circuit exchange between the main cavity 07 and the rapid sample injection cavity 12 by opening and closing. The main cavity 07 and the rapid sample injection cavity 12 are connected with a mechanical pump and a molecular pump through pipelines.
According to the application method of the magnetron sputtering equipment capable of combining multiple power supplies, firstly, a Ti target is arranged in a cathode I01, an Al target is arranged in a cathode II 02, a C target is arranged in a cathode III 03, a vacuumizing system is opened, and when the air pressure of a rapid sample injection cavity 12 is close to that of a main cavity 07, a gate valve 11 is opened. The sample to be sputtered is put into the rapid sample injection cavity 12, the sample to be sputtered is pushed to the sample table 08 of the main cavity 07 from the rapid sample injection cavity 12 through a mechanical rod, the mechanical rod is removed, the baffle I04, the baffle II 05 and the baffle III 06 are opened, and argon is introduced into the main cavity 07. The cathode I01 is connected with HIPIMS power supply, the cathode II 02 is connected with DC power supply, the cathode III 03 is connected with RF power supply and is opened, the vacuumizing condition in the main cavity 07 is continuously observed, the vacuum degree in the main cavity 07 is kept at 10 -5 Pa, the working current is regulated to be kept at 20mA, the rotating motor 09 is opened, the sample is driven by the sample table 08 to perform rotary sputtering, the observation window baffle 13 is opened, and the discharge state of the equipment is observed through the observation window 10. After sputtering for 4 hours, the power supply is turned off, the rotating motor 09 is turned off, and the baffle I04, the baffle II 05 and the baffle III 06 are turned off, so that the co-sputtering of the sample is completed.
Example 2
The magnetron sputtering equipment capable of compounding multiple power supplies comprises a main cavity 07, wherein the main cavity 07 is in a cylindrical shape, three cylindrical cathode sockets distributed in a regular triangle are arranged at the top of the main cavity 07, and the three cathode sockets are respectively connected with a cathode I01, a cathode II 02 and a cathode III 03 which are 2 inches. The upper part of the cathode I01 is connected with a HIPIMS power supply, the lower part of the cathode I is provided with a Ti target, and the lower part of the Ti target is provided with a baffle I04; a baffle II 05 is arranged at the lower part of the cathode II 02; the lower part of the cathode III 03 is provided with a baffle III 06, and the baffle I04, the baffle II 05 and the baffle III 06 are controlled to open and close by an air circuit. A rotatable sample stage 08 is arranged in the main cavity 07, and a rotary motor 09 is connected below the sample stage 08. An observation window 10 made of glass material is arranged at the same height as the sample stage 08 at the lower part of the main cavity 07, and an observation window baffle 13 is arranged in the inner layer of the observation window 10. The main cavity 07 is connected with a rapid sample injection cavity 12, the diameter of the rapid sample injection cavity 12 is 200+/-5 mm, the height of the rapid sample injection cavity 12 is 100+/-5 mm, the rapid sample injection cavity 12 is connected with a mechanical rod, and the mechanical rod passes through the rapid sample injection cavity 12 to be arranged, so that samples in the rapid sample injection cavity 12 can be directly pushed to the main cavity 07. A gate valve 11 is arranged between the rapid sample injection cavity 12 and the main cavity 07, and the gate valve 11 can control gas circuit exchange between the main cavity 07 and the rapid sample injection cavity 12 by opening and closing. The main cavity 07 and the rapid sample injection cavity 12 are connected with a mechanical pump and a molecular pump through pipelines.
The application method of the magnetron sputtering equipment capable of combining multiple power supplies provided by the utility model comprises the steps of firstly installing a Ti target in a cathode I01 according to the requirement, opening a vacuum pumping system, and opening a gate valve 11 when the air pressure of a rapid sample injection cavity 12 is close to that of a main cavity 07. The sample to be sputtered is put into the rapid sample injection cavity 12, the sample to be sputtered is pushed to the sample table 08 of the main cavity 07 from the rapid sample injection cavity 12 through a mechanical rod, the mechanical rod is removed, the baffle I04 is opened, and argon is introduced into the main cavity 07. The cathode I01 is connected with HIPIMS power and is opened, the vacuumizing condition in the main cavity 07 is continuously observed, the vacuum degree in the main cavity 07 is kept at 10 - 5 Pa, the working current is regulated to be kept at 20mA, the rotating motor 09 is opened, the sample is rotated and sputtered under the drive of the sample table 08, the observation window baffle 13 is opened, and the discharge state of the equipment is observed through the observation window 10. After sputtering for 4 hours, the power supply is turned off, the rotating motor 09 is turned off, the baffle I04 is turned off, and the co-sputtering of the sample is completed.
The above is only for illustrating the technical idea of the present utility model, and the protection scope of the present utility model is not limited by this, and any modification made on the basis of the technical scheme according to the technical idea of the present utility model falls within the protection scope of the claims of the present utility model.
Claims (10)
1. The magnetron sputtering equipment capable of compounding multiple power supplies is characterized by comprising a main cavity (07), wherein the main cavity (07) is connected with a rapid sample injection cavity (12) and a vacuumizing system, three cathode sockets distributed in a regular triangle are arranged at the top of the main cavity (07), the three cathode sockets are respectively connected with a cathode I (01), a cathode II (02) and a cathode III (03), and the cathode I (01), the cathode II (02) and the cathode III (03) are respectively compounded with different or same types of power supplies.
2. The magnetron sputtering apparatus of claim 1 wherein the power source is HIPIMS power source, dc power source and RF power source.
3. The magnetron sputtering device capable of combining multiple power supplies according to claim 1, wherein the lower parts of the cathode I (01), the cathode II (02) and the cathode III (03) are respectively provided with a target material.
4. A magnetron sputtering apparatus capable of combining multiple power supplies according to claim 3, wherein the lower parts of the targets are provided with baffles.
5. The magnetron sputtering device capable of compounding multiple power supplies according to any one of claims 1 to 4, characterized in that a gate valve (11) is arranged between the main cavity (07) and the rapid sample injection cavity (12).
6. Magnetron sputtering apparatus capable of combining multiple power sources according to any of claims 1 to 4, characterized in that a rotatable sample stage (08) is provided inside the main chamber (07).
7. Magnetron sputtering apparatus capable of combining multiple power sources according to any one of claims 1 to 4, characterized in that the lower part of the main chamber (07) is provided with an observation window (10).
8. Magnetron sputtering apparatus capable of combining multiple power supplies according to claim 7, characterized in that the inner layer of the observation window (10) is provided with an observation window baffle (13).
9. The magnetron sputtering device capable of combining multiple power supplies according to any one of claims 1 to 4, characterized in that the rapid sample injection cavity (12) is connected with a mechanical rod.
10. The magnetron sputtering device capable of combining multiple power supplies according to any one of claims 1 to 4, characterized in that the vacuum pumping system comprises a mechanical pump and a molecular pump, both of which are connected with the main chamber (07) and the rapid sample injection chamber (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322474578.8U CN220999809U (en) | 2023-09-12 | 2023-09-12 | Magnetron sputtering equipment capable of compounding multiple power supplies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322474578.8U CN220999809U (en) | 2023-09-12 | 2023-09-12 | Magnetron sputtering equipment capable of compounding multiple power supplies |
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| Publication Number | Publication Date |
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| CN220999809U true CN220999809U (en) | 2024-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322474578.8U Active CN220999809U (en) | 2023-09-12 | 2023-09-12 | Magnetron sputtering equipment capable of compounding multiple power supplies |
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| Country | Link |
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| CN (1) | CN220999809U (en) |
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2023
- 2023-09-12 CN CN202322474578.8U patent/CN220999809U/en active Active
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