CN208485945U - A kind of dual chamber high-vacuum multi-target magnetic control sputtering device - Google Patents
A kind of dual chamber high-vacuum multi-target magnetic control sputtering device Download PDFInfo
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- CN208485945U CN208485945U CN201820505598.3U CN201820505598U CN208485945U CN 208485945 U CN208485945 U CN 208485945U CN 201820505598 U CN201820505598 U CN 201820505598U CN 208485945 U CN208485945 U CN 208485945U
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Abstract
The utility model relates to a kind of dual chamber high-vacuum multi-target magnetic control sputtering devices, including sputtering vacuum chamber, specimen holder, magnetic control target, Sample Room, transmission lever and workbench.The sputtering vacuum chamber of traditional high vacuum magnetic control sputtering device, it is especially grown extracting the chamber the time it takes, vacuum chamber is completely filled with air again after changing target, and needs that the time is spent to carry out extraction operation again, this will extend the time of sputter coating, while have a significant impact to industrial production efficiency.The utility model redesigns magnetic control sputtering device, by installing a chamber additional as Sample Room, avoid changing target operation in sputtering chamber progress, it can be very good the vacuum degree for retaining sputtering chamber, or shorten and extract duration consumed by air again, by increasing transmission lever, the pickup of sample to be sputtered can be carried out automatically and send part operation, excessive artificial participation is avoided, has tool to be very helpful for improving operating efficiency.
Description
Technical field
The utility model relates to vacuum magnetic-control sputtering technical field, more particularly to be applied to be coated with various single layer membrane systems,
The more target center vacuum magnetic-control sputtering devices of the bicavate of assembly of thin films.
Background technique
With the demand of industry and the development of sufacing, vacuum magnetic-control sputtering technology, that is, magnetic field control sputtering side
Formula is a kind of current most widely used sputter deposition.It is on the basis of two pole d.c. sputterings, near target surface
Increase a magnetic field, for electronics due to the effect by electric and magnetic fields, movement of spinning substantially increases the service life of electronics, increases
Ionization yield, so that the degree of ionization of region of discharge improves, i.e., the density of ion and electronics increases.The effective resistance of region of discharge becomes
It is small, voltage decline.In addition region of discharge concentrates on target surface, and ion concentration in region of discharge is high, thus be incident on target surface from
Sub- density greatly improves, thus sputtering yield greatly increases.So-called sputtering refers to accelerated positive ion bombardment cathode (target) table
When face, the energy of itself is transmitted to the atom of cathode surface, atom leaves cathode and is deposited on matrix, that is, it is heavy on body to be formed
Product film.Currently, novel magnetic control sputtering such as high-speed sputtering, certainly sputtering etc. become the new development trend in current magnetron sputtering field,
For shortening the time of sputter coating, improving industrial production efficiency has preferable help.But during use, Gao Zhen
The sputtering vacuum chamber of empty magnetic control sputtering device, extracting, the chamber the time it takes is especially long, needs according to vacuum is worked normally
It asks and extracts the time at least at 4 hours or more.Vacuum chamber is completely filled with air again after changing target, and needs to spend again small more than 4
Shi Jinhang extracts operation, this will extend the time of sputter coating, while have a significant impact to industrial production efficiency.
Summary of the invention
It is stated in the background to change after target the air for needing to take a long time and extracting sputtering vacuum chamber again, in order to
Shorten consumed duration when extracting vacuum, improves the efficiency of sputter coating, the utility model provides a kind of dual chamber high vacuum
Multi-target magnetic control sputtering device is avoided changing target operation and carried out in sputtering chamber by addition installing a chamber additional as Sample Room, can be with
It is effectively maintained the vacuum degree of sputtering chamber, or shortens and extract duration consumed by air again, it, can be with by increasing transmission lever
Automatically it carries out the pickup of sample to be sputtered and send part operation, avoid excessive artificial participation, have very greatly for improving operating efficiency
Help.It can be used for being coated with various single layer membrane systems, assembly of thin films, it can be achieved that single target directly splashes, double targets splash altogether, and three targets splash altogether, together
When reaction magnetocontrol sputtering may be implemented, prepare nitride, oxide etc., can plating metal, alloy, compound, semiconductor, medium it is multiple
Film and other chemical reaction films are closed, realizes technology controlling and process finally by PLC.
The technical scheme for implementing the utility model is as follows:
A kind of dual chamber high-vacuum multi-target magnetic control sputtering device, which is characterized in that including sputtering vacuum chamber, specimen holder, magnetic control
Target, Sample Room, transmission lever and workbench；Wherein, the sputtering vacuum chamber, by high-quality stainless steel welded, surface electrolysis processing, outside
Shape is beautiful, good seal, is distributed flange-interface on chamber；The specimen holder is single-station specimen holder, has the total baffle of sample,
It is a piece of that 110mm*110mm sample can be placed, can be continuously adjusted with electronic rotation, 0~30 rev/min of revolving speed.Sample heating temperature is most
It is 600 DEG C high；The magnetic control target, radio frequency and direct current are compatible, all can axially move distance range (relative to substrate) 40~80mm,
Shape metallic leak-proof structure, target are equipped with electric guard board, and 3 inches of target surface size, hydromagnetic separated structure, target surface is copper material, cooling effect
Fruit is good, in internal vacuum chamber point, can manually adjust yaw, and 0~15 degree of swaying angle.There is partition to separate between magnetic control target, it can
To prevent cross contamination；The Sample Room, by high-quality stainless steel welded, surface electrolysis processing, good appearance, good seal, chamber
Flange-interface is distributed on room；The transmission lever, is made of imported bearing and its ball-screw, is mainly used for Sample Room and sputtering chamber
Between carry out the transmitting of sample, movement is steady, and position is accurate, and easy to operate, one end is equipped with linear motor；The workbench, it is whole
The workbench of body device is welded using the polishing of 40 square tubes, surface lacquer, and surrounding installs bending door-plate.
Detailed description of the invention
Fig. 1 is the utility model dual chamber superhigh vacuum magnetron sputtering schematic device；
Fig. 2 is that the utility model sputters vacuum chamber magnetic control target schematic diagram.
AC servo motor 1, specimen holder 3, sputtering vacuum chamber 4, sputtering point 5, sputtering egative film 6, surveys press fitting at rotating assembly 2
Set 7, observation panel 8, workbench 9, control valve 10, Sample Room switch 11, Sample Room 12, sputtering vacuum chamber switch 13, transmission lever 14,
Gear 15, support base 16, linear motor 17, vacuum drawn pipeline 18 and 19, switch valve 20
Specific embodiment
The embodiment of the utility model structure is described in detail now in conjunction with attached drawing:
A kind of dual chamber high-vacuum multi-target magnetic control sputtering device, which is characterized in that including sputtering vacuum chamber, specimen holder, magnetic control
Target, Sample Room, transmission lever and workbench.The utility model be increased on the basis of original sputtering vacuum chamber 4 it is special into
Specimen chamber 12 and sample introduction transmission lever 14.When the work of dual chamber high-vacuum multi-target magnetic control sputtering device, first time sample introduction is not needed
By Sample Room 12, because first time sample introduction sputtering vacuum chamber 4 and Sample Room 12 are required through vacuum drawn pipeline 18 and 19
Extract vacuum operation.So just task for convenience, directly can open sputtering vacuum chamber 4 by sputtering vacuum chamber switch 13
Valve, sputtering egative film 6 is placed at magnetic control target target center, control valve 10 is now in closed state, i.e., sputtering 4 He of vacuum chamber
12 connection position of Sample Room is dissengaged positions, is then shut off the valve of sputtering vacuum chamber 4, is extracted and is sputtered by vacuum drawn pipeline 18
Gas in vacuum chamber 4, the vacuum degree needed for meeting sputtering finally start to sputter operation.
It is changed it should be noted that transmission lever 14 can be directly communicated to sputtering vacuum chamber 4 under the drive of linear motor 17
Sample operation.When first time sputtering work, valve 20 is turned off the switch (by sealing between switch valve 20 and transmission lever 14
Reason), extraction vacuum operation is carried out to Sample Room 12 by vacuum drawn pipeline 19, until reaching set provisioning request, in this way
The benefit done be can guarantee during varying sputter vacuum chamber 4 in vacuum degree it is constant or variation it is smaller, next time splashes
Penetrating operation can not have to spend the time to carry out vacuum drawn again or the very short time need to only be spent to carry out carrying out vacuum pumping
It takes.When first time sputter operation after, open control valve 10, by transmission lever 14 take out sputtering complete egative film, be put into
Specimen chamber 12 is then shut off control valve 10, and the valve of Sample Room 12 is opened by Sample Room switch 11, exchanges new egative film for and carries out the
Secondary sputtering operation.
When carrying out second sputtering operation, by the valve of the closing Sample Room 12 of Sample Room switch 11, again into
Specimen chamber 12 carries out vacuum drawn operation, until satisfactory vacuum degree.Then open control valve 10, by transmission lever 14 to
The egative film of sputtering is pushed to sputter vacuum chamber 4, is in suitable position to make to sputter egative film 6, can pass through AC servo motor 1
Band moving gear makes to sputter the rotation of vacuum chamber magnetic control target, when rotation, can observe position by observation panel 8 and be adjusted, most
Control valve 10 is closed afterwards.It in the whole process, can be when shorter if the vacuum degree in sputtering vacuum chamber 4 is declined
It is interior that operation is extracted by vacuum drawn pipeline 18 again.Sputtering operation later need to only be repeated with second of sputtering operation
The same process.
It, cannot the above content is specific preferred embodiment further detailed description of the utility model is combined
Assert that the specific implementation of the utility model is only limited to these instructions.For the ordinary skill of the utility model technical field
For personnel, make several equivalent substitute or obvious modifications without departing from the concept of the premise utility, and performance or
Purposes is identical, then shall be regarded as belonging to the protection scope that claims that the utility model is submitted determine.
Claims (1)
1. a kind of dual chamber high-vacuum multi-target magnetic control sputtering device, which is characterized in that including sputtering vacuum chamber, specimen holder, magnetic control target,
Sample Room, transmission lever and workbench；Wherein, the sputtering vacuum chamber, by high-quality stainless steel welded, surface electrolysis processing, chamber
Upper distribution flange-interface；The specimen holder has the total baffle of sample, can be continuously adjusted with electronic rotation；The magnetic control target, is penetrated
Frequency and direct current are compatible, all can axially move, shape metallic leak-proof structure, target is equipped with electric guard board, hydromagnetic separated structure, and target surface is
Copper material can manually adjust yaw in internal vacuum chamber point, have partition to separate between magnetic control target；The Sample Room, by high-quality
Stainless steel welded, surface electrolysis is handled, and is distributed flange-interface on chamber；The transmission lever, by imported bearing and its ball-screw
Composition, one end are equipped with linear motor；The workbench of the workbench, single unit system is welded using square tube polishing, surface spray
Paint, surrounding install bending door-plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820505598.3U CN208485945U (en) | 2018-04-11 | 2018-04-11 | A kind of dual chamber high-vacuum multi-target magnetic control sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820505598.3U CN208485945U (en) | 2018-04-11 | 2018-04-11 | A kind of dual chamber high-vacuum multi-target magnetic control sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208485945U true CN208485945U (en) | 2019-02-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820505598.3U Expired - Fee Related CN208485945U (en) | 2018-04-11 | 2018-04-11 | A kind of dual chamber high-vacuum multi-target magnetic control sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208485945U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129758A (en) * | 2019-06-19 | 2019-08-16 | 浙江工业大学 | A kind of magnetron sputtering consersion unit hook-hang type changes sampling device |
-
2018
- 2018-04-11 CN CN201820505598.3U patent/CN208485945U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129758A (en) * | 2019-06-19 | 2019-08-16 | 浙江工业大学 | A kind of magnetron sputtering consersion unit hook-hang type changes sampling device |
| CN110129758B (en) * | 2019-06-19 | 2024-02-09 | 浙江工业大学 | Hook type sample replacing device of magnetron sputtering reaction equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190212 Termination date: 20200411 |