CN220543943U - Light crosstalk prevention LED display screen core component applied to mini display - Google Patents
Light crosstalk prevention LED display screen core component applied to mini display Download PDFInfo
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- CN220543943U CN220543943U CN202320990293.7U CN202320990293U CN220543943U CN 220543943 U CN220543943 U CN 220543943U CN 202320990293 U CN202320990293 U CN 202320990293U CN 220543943 U CN220543943 U CN 220543943U
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- 239000008358 core component Substances 0.000 title claims abstract description 16
- 230000002265 prevention Effects 0.000 title claims description 9
- 230000000903 blocking effect Effects 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 76
- 229910052594 sapphire Inorganic materials 0.000 claims description 24
- 239000010980 sapphire Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
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Abstract
The utility model relates to an anti-light crosstalk LED display screen core component applied to mini display, which comprises a die bonding plate, LED chips arranged on the die bonding plate and a light blocking structure arranged between adjacent LED chips. According to the utility model, the light blocking structure is arranged between the adjacent LED chips, the main luminous band is not affected, the light emitted by the two adjacent chips is not scattered mutually, the optical influence between the chips is reduced, the problem of light cross is effectively solved, and the contrast and definition of image display are greatly improved.
Description
Technical field:
the utility model belongs to the technical field of active luminous display, and relates to an anti-light crosstalk LED display screen core component applied to mini display.
The background technology is as follows:
the LED display (Micro-LED (Mini-LED) display) is a novel flat panel display technology which is paid attention to in recent years, has the advantages of wide color gamut, high luminous efficiency, high response speed, wide working temperature range and the like, is widely applied to the fields of high-end display, flat panel display backlight sources and illumination, and has important application prospects. The core component of the LED display is an LED panel formed by orderly arranging a plurality of LED chips on a substrate. The assembly manufacturing process mainly comprises preparation of an LED chip layer, preparation of a substrate and accurate bonding of an LED chip and the substrate.
As the density of the LED display screen increases, the arrangement density of the LED chips gradually increases, so that the sizes of the LED chips applied to the display screen correspondingly decrease, and the miniature light-emitting diode (Mini Micro LED for short) chips with the sizes reaching the sub-millimeter level are widely applied to the display screen, at the moment, the LED chip arrays are mutually independent because the chips are mutually independent, and after die bonding is completed, the periphery of the sapphire of the light-emitting chip emits light; because the effective partition cannot be arranged on the current scale interval, the light between pixels can be mutually crosstalked, the influence on the display quality of the image is unavoidable, the image is in the form of blurred edges and color aliasing, and the display quality of the display screen is reduced.
The utility model comprises the following steps:
the utility model aims to provide an anti-light crosstalk LED display screen core component applied to mini display.
In order to solve the technical problems, the core component of the light crosstalk prevention LED display screen applied to mini display comprises a die bonding plate, LED chips arranged on the die bonding plate and a light blocking structure arranged between adjacent LED chips.
The thickness of the sapphire layer of the LED chip is 60-80 mu m.
The light blocking structure is a light blocking layer with the height of 40-50 mu m prepared at the upper part of the side surface of the sapphire layer.
The light blocking layer is a metal Ti, al, ti, au composite layer or a Bragg reflection layer formed by stacking TiO2 and SiO 2.
The thickness of each layer of the metal Ti, al, ti, au composite layer is 2nm, 100nm, 50nm and 200nm respectively; the thickness of the single layer of the TiO2 and SiO2 laminated layers is 60nm and 80nm respectively.
The light blocking structure is a blue diamond layer of the LED chip and a light-proof layer coated on the side face of the double-layer laminated structure.
The light blocking structure is a grid structure fixed on the die bonding plate, and each LED chip is fixed in the grid.
The grid structure adopts a reflective metal grid structure or a grid structure with a reflective layer prepared on the surface.
The beneficial effects are that:
1) The thickness of the sapphire layer of the LED chip is reduced to 60-80 mu m, so that the brightness and heat dissipation can be effectively increased.
2) Light is emitted from the active region, a part of the light is emitted from the front surface of the sapphire layer, and a part of the light is emitted from the periphery of the sapphire layer; according to the utility model, the light blocking structure is arranged between the adjacent LED chips, the main luminous band is not affected, the light emitted by the two adjacent chips is not scattered mutually, the optical influence between the chips is reduced, the problem of light cross is effectively solved, and the contrast and definition of image display are greatly improved.
Drawings
Fig. 1 is a schematic diagram of a partial structure of a core component of an LED display screen according to embodiment 1 of the present utility model.
Fig. 2 is a schematic diagram of a partial structure of a core component of an LED display screen according to embodiment 2 of the present utility model.
Fig. 3 is a schematic diagram of a partial structure of a core component of an LED display screen according to embodiment 3 of the present utility model.
In the figure: sapphire: a sapphire layer; bonding layer: a double-layer laminated structure; p-Gap: p-type doped GaP; p-pad: a p electrode; n-pad: an n-electrode; MQWs: a multiple quantum well; alGalnP: aluminum gallium indium phosphide epitaxial material; PV layer: and (3) a protective layer.
Detailed Description
The present utility model will now be described in further detail with reference to the drawings and examples, it being understood that the specific examples described herein are intended to illustrate the utility model only and are not intended to be limiting. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present utility model are shown in the drawings.
In the description of the present utility model, unless explicitly stated and limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements or interaction relationship between the two elements. The specific meaning of the above terms in the present utility model can be understood in detail by those skilled in the art.
In the present utility model, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below", "beneath" the second feature includes the first feature being "directly under" and obliquely below "the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "left", "right", and the like are orientation or positional relationships based on those shown in the drawings, for convenience of description and simplicity of operation, and are not meant to indicate or imply that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the utility model. Furthermore, the terms "first," "second," and the like, are used merely for distinguishing between descriptions and not for distinguishing between them.
Example 1
As shown in fig. 1, the core component of the light crosstalk prevention LED display screen applied to mini display of the present utility model includes a die bonding plate and LED chips arranged thereon; the thickness of the sapphire layer of the LED chip is 60-80 mu m, and the upper part of the side face of the sapphire layer is provided with a light blocking layer 2 with the height of 40-50 mu m.
The LED chip layer comprises a light-emitting layer, the outermost surface of the light-emitting layer is a p-GaP layer, the surface doping concentration of the p-GaP layer reaches more than 8E20, a p-electrode ohmic contact layer is made under high doping, an Al2O3/SiO2 double-layer laminated structure (bonding layer) is deposited on the roughened upper surface of the p-GaP layer, and the thicknesses of the Al2O3 layer and the SiO2 layer are respectively 0.5 mu m and 3.5 mu m; the polished planarized surface of the bi-layer laminate structure is bonded to a sapphire layer (sapphire), typically 60-80 μm thick; multiple Quantum Wells (MQWs) and aluminum gallium indium phosphide epitaxial materials (AlGalnP) are prepared on the lower surface of the p-GaP layer at positions avoiding the p electrode ohmic contact layer; welding a P electrode (P-pad) under the P electrode ohmic contact layer, and welding an N electrode (N-pad) under the AlGalnP epitaxial material; a PV protective layer (PV layer) is prepared under the N-electrode (N-pad).
The sapphire layer is thinned to 60-80 mu m, so that the brightness can be increased and the heat dissipation can be increased.
The light blocking layer 2 can be a metal Ti, al, ti, au composite layer, the thicknesses of the layers are respectively 2nm, 100nm, 50nm and 200nm, the light blocking layer 2 can also be a Bragg reflection layer (DBR) formed by stacking TiO2 and SiO2, and the single-layer thicknesses are respectively 60nm and 80nm; the light emitted by the LED chip only passes through the front surface of the sapphire layer, and the side surface of the sapphire layer does not emit light, so that light crosstalk is prevented.
A large number of experiments show that when the thickness of the sapphire layer is 60-80 mu m and the height of the light blocking layer is 40-50 mu m, the LED chip has high light emitting efficiency and good heat dissipation effect, and can effectively reduce optical crosstalk between pixel levels of a display screen of mini display, thereby improving contrast and definition of image display.
Example two
As shown in fig. 2, the core component of the light crosstalk prevention LED display screen applied to mini display of the present utility model includes a die bonding plate and LED chips arranged thereon; the thickness of the sapphire layer of the LED chip is 60-80 mu m; the sapphire layer of the LED chip and the side of the double-layered laminated structure are prepared with an opaque layer 3 as a light blocking layer.
The opaque layer 3 may be an opaque epoxy layer or an opaque other material layer; the side light of the sapphire layer is absorbed by the light-tight layer, and only the front surface of the sapphire layer emits light, so that the crosstalk of light between two adjacent LED chips can be effectively reduced.
The light-tight layer 3 can reduce optical crosstalk between pixel levels of a display screen of a mini display, thereby improving contrast and definition of image display.
Example III
As shown in fig. 3, the core component of the light crosstalk prevention LED display screen applied to mini display of the present utility model includes a die bonding plate, a grid structure 4 as a light blocking layer fixed on the die bonding plate, and LED chips fixed on the die bonding plate and arranged in the grid; the thickness of the sapphire layer of the LED chip is 60-80 mu m.
The grid structure 4 can reduce optical crosstalk between pixel levels of a display screen of mini display, so that contrast and definition of image display are improved; the grid structure 4 can adopt a reflective metal grid structure, so that side light of the sapphire layer is reflected out of the metal grid structure, and light between two adjacent LED chips cannot be crosstalked; the mesh structure 4 may be a mesh structure of other materials, and the surface thereof is provided with the same light blocking layer as in the first embodiment or the same opaque epoxy layer as in the first embodiment.
Claims (3)
1. The core component of the light crosstalk prevention LED display screen applied to mini display is characterized by comprising a die bonding plate, LED chips arranged on the die bonding plate and a light blocking structure arranged between adjacent LED chips; the thickness of the sapphire layer of the LED chip is 60-80 mu m; the light blocking structure is a light blocking layer with the height of 40-50 mu m prepared at the upper part of the side surface of the sapphire layer.
2. The LED display screen core component for light crosstalk prevention applied to mini display according to claim 1, wherein the light blocking layer is a metal Ti, al, ti, au composite layer or a Bragg reflection layer formed by stacking TiO2 and SiO2 layers.
3. The core component of the light crosstalk prevention LED display screen applied to mini display according to claim 2, wherein the thicknesses of the metal Ti, al, ti, au composite layers are 2nm, 100nm, 50nm and 200nm respectively; the thickness of the single layer of the TiO2 and SiO2 laminated layers is 60nm and 80nm respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320990293.7U CN220543943U (en) | 2023-04-27 | 2023-04-27 | Light crosstalk prevention LED display screen core component applied to mini display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320990293.7U CN220543943U (en) | 2023-04-27 | 2023-04-27 | Light crosstalk prevention LED display screen core component applied to mini display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220543943U true CN220543943U (en) | 2024-02-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320990293.7U Active CN220543943U (en) | 2023-04-27 | 2023-04-27 | Light crosstalk prevention LED display screen core component applied to mini display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220543943U (en) |
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2023
- 2023-04-27 CN CN202320990293.7U patent/CN220543943U/en active Active
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