CN110854257A - Flip LED chip capable of converting colors and manufacturing method thereof - Google Patents
Flip LED chip capable of converting colors and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000002096 quantum dot Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910052681 coesite Inorganic materials 0.000 claims description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052682 stishovite Inorganic materials 0.000 claims description 13
- 229910052905 tridymite Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 11
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium dioxide Chemical compound O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229910009815 Ti3O5 Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 10
- 230000006872 improvement Effects 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention discloses a flip LED chip capable of converting colors and a manufacturing method thereof, wherein the chip comprises a substrate and a light-emitting structure arranged on the front surface of the substrate, the back surface of the substrate is provided with a groove, quantum dots are filled in the groove, the groove is provided with a filter layer, the filter layer covers the quantum dots, and light waves passing through the quantum dots are filtered; the light formed by the corresponding quantum dots is emitted from the filter layer, and the light of the colors except the quantum dots is reflected by the filter layer to one side of the light-emitting structure, so that the corresponding quantum dots are mixed with the non-stray light. The invention can realize full-color display and single-color display on the same chip by filling quantum dots with different colors in the groove, wherein, the chip of the invention only needs to form a light-emitting structure, and the light emitted by the same light-emitting structure can emit light with different colors through the quantum dots with different colors, thereby effectively reducing the volume of the display screen.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a flip LED chip capable of converting colors and a manufacturing method thereof.
Background
The LED full-color screen adopts three-color luminous tubes of red, green and blue, and each tube has 256 gray levels to form 16,777,216 colors. Full-color LED display screen system has adopted present newest LED technique and control technology, makes full-color LED display screen price lower, the performance is more stable, the consumption is lower, unit resolution is higher, the color is more lifelike abundant, when the component system electronic component still less, make the fault rate reduce.
The display screen made by putting the red and green LEDs together as one pixel is called a double-color screen or a color screen; the display screen in which three kinds of red, green, and blue LED tubes are put together as one pixel is called a three-color screen or a full-color screen.
The light emitting surface of the existing flip LED chip for the display screen is the back surface of the substrate, the existing packaging method needs to coat fluorescent glue on the back surface of the substrate for packaging, and the packaged chip is large in size. If the display screen will realize full-color display, then need the flip-chip LED chip of red, blue and green three kinds of colours or the flip-chip LED chip of more colours to arrange the encapsulation, the encapsulation volume is just bigger, is difficult to satisfy the demand of market to small-size full-color display screen.
Disclosure of Invention
The invention aims to provide a flip LED chip capable of converting colors and a manufacturing method thereof, which can realize the conversion of single color and full color and have small packaging volume.
In order to solve the technical problem, the invention provides a flip LED chip capable of converting colors, which comprises a substrate and a light-emitting structure arranged on the front surface of the substrate, wherein a groove is formed in the back surface of the substrate, quantum dots are filled in the groove, a filter layer is arranged on the groove, the filter layer covers the quantum dots, and light waves passing through the quantum dots are filtered;
the light formed by the corresponding quantum dots is emitted from the filter layer, and the light of the colors except the quantum dots is reflected by the filter layer to one side of the light-emitting structure, so that the corresponding quantum dots are mixed with the non-stray light.
As an improvement of the above scheme, at least 3 grooves are formed in the back surface of the substrate, blue quantum dots, green quantum dots and red quantum dots are respectively filled in the grooves, a first filter layer covers the blue quantum dots, a second filter layer covers the green quantum dots, and a third filter layer covers the red quantum dots;
blue light formed by the blue quantum dots is emitted from the first filter layer, and light of colors other than blue is reflected to one side of the light-emitting structure by the first filter layer;
green light formed by the green quantum dots is emitted from the second filter layer, and light of colors other than green is reflected to one side of the light-emitting structure by the second filter layer;
the red light formed by the red quantum dots is emitted from the third filter layer, and the light of the colors except the red color is reflected to one side of the light-emitting structure by the third filter layer.
As an improvement of the above scheme, the area of the blue quantum dots: area of green quantum dot: the area of the red quantum dot is 3:6: 1.
As an improvement of the scheme, the filter layer is of a laminated structure and is made of Ti2O5And SiO2Alternately forming; wherein the thickness of the filter layer is a, Ti3O5Of a1, SiO2Has a total thickness of a2, and has a wavelength of b, Ti, of light passing through the filter layer3O5Has a refractive index of k1, SiO2Has a refractive index of k2, wherein a1 is b/(4 × k1), and a2 is b/(4 × k2), i.e., a is b/(4 × k1) + b/(4 × k 2).
As an improvement of the scheme, the quantum dots are made of one or more of CdSe, ZnS, CdTe, ZnSe, CuInS and InP, and the particle size of the quantum dots is 5-50 mu m.
As an improvement of the above scheme, the light-emitting device further comprises a light-blocking layer arranged on the side wall of the substrate to block light emitted by the light-emitting structure from exiting from the side surface of the substrate.
As an improvement of the above scheme, the light blocking layer is further disposed between the grooves to prevent light formed by the quantum dots from exiting from the side walls of the grooves, and to prevent light of different colors from mixing.
As an improvement of the above scheme, the light-blocking layer is made of a light-blocking material or a reflecting material;
the light blocking material is TiO2Or CrO2；
The reflective material is aluminum or silver.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip capable of converting colors, which comprises the following steps:
forming a light emitting structure on the front surface of the substrate;
etching the back surface of the substrate to form a groove;
filling quantum dots into the grooves;
and forming a filter layer on the quantum dots, wherein light formed by the corresponding quantum dots is emitted from the filter layer, and light of colors other than the quantum dots is reflected by the filter layer to one side of the light-emitting structure, so that no stray light is mixed into the light-emitting structure corresponding to the quantum dots.
As an improvement of the scheme, the colloidal quantum dot solution is dripped into the groove by adopting a capillary tube and is dried at the temperature of 170-250 ℃.
The implementation of the invention has the following beneficial effects:
according to the invention, the back surface of the substrate is etched to form the groove, wherein the quantum dots are filled in the groove, so that the volume of the chip is not increased, the gap between the chip and the chip is effectively reduced, and the display effect of the display screen is improved.
The invention can realize full-color display and single-color display on the same chip by filling quantum dots with different colors in the groove, wherein, the chip of the invention only needs to form a light-emitting structure, and the light emitted by the same light-emitting structure can emit light with different colors through the quantum dots with different colors, thereby effectively reducing the volume of the display screen.
Furthermore, the quantum dots are provided with the corresponding filter layers, the filter layers only allow light of the quantum dots with the color to pass through, and light of other colors is reflected to one side of the light-emitting structure, so that no stray light is mixed in the quantum dots, and the purity of light emitted by the chip is ensured.
Drawings
FIG. 1 is a schematic diagram of a first embodiment of a color-switchable flip-chip LED chip according to the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of a color-switchable flip-chip LED chip according to the present invention;
FIG. 3 is a first schematic view of a groove of the present invention;
FIG. 4 is a second schematic view of a groove of the present invention;
FIG. 5 is a third schematic view of a groove of the present invention;
fig. 6 is a fourth schematic view of the groove of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the present invention provides a flip-chip LED chip capable of converting colors, which includes a substrate 10 and a light emitting structure disposed on a front surface of the substrate 10.
The light emitting structure of the present invention includes a first semiconductor layer 21 disposed on a substrate 10, an active layer 22 and a first electrode 25 disposed on the first semiconductor layer 21, a second semiconductor layer 23 disposed on the active layer 22, a reflective layer 24 and a second electrode 26 disposed on the second semiconductor layer 24. The reflective layer 24 of the present invention reflects the light emitted from the active layer 22 to the back surface of the substrate 10, i.e., the back surface of the substrate 10 is a light-emitting surface. In order to improve the current spreading performance of the chip, a transparent conductive layer 27 is further disposed between the second semiconductor layer 23 and the reflective layer 24, and the second electrode 26 is connected to the transparent conductive layer 27.
The above-described light emitting structure is only a preferable embodiment of the present invention, and the existing light emitting structure is also applicable to the present invention. In addition, the chip of the present invention further includes an insulating layer 60, and the insulating layer 60 covers the sidewall of the light emitting structure.
To protect the light emitting structure.
The back surface of the substrate 10 is provided with a groove, the groove is filled with quantum dots 30, the groove is provided with a filter layer 40, the filter layer 40 covers the quantum dots 30, and light waves passing through the quantum dots 30 are filtered; the light formed by the corresponding quantum dots 30 is emitted from the filter layer 40, and the light of the color other than the quantum dots 30 is reflected by the filter layer 40 to the light emitting structure side, so that no stray light is mixed into the corresponding quantum dots 30.
Referring to fig. 2, at least 3 grooves are formed in the back surface of the substrate 10, blue quantum dots 31, green quantum dots 32 and red quantum dots 33 are respectively filled in the grooves, a first filter layer 41 covers the blue quantum dots 31, a second filter layer 42 covers the green quantum dots 32, and a third filter layer 43 covers the red quantum dots 33.
Specifically, the blue light formed by the blue quantum dots 31 is emitted from the first filter layer 41, and the light of the color other than blue is reflected by the first filter layer 41 to one side of the light-emitting structure; green light formed by the green quantum dots 32 is emitted from the second filter layer 42, and light of colors other than green is reflected by the second filter layer 42 back to one side of the light-emitting structure; the red light formed by the red quantum dots 33 is emitted from the third filter layer 43, and the light of colors other than red is reflected by the third filter layer 43 back to the light-emitting structure side.
It should be noted that, the color temperature can be adjusted by adjusting the opening size ratio of the groove. If white light is to be emitted, it is preferable that the area of the blue quantum dots: area of green quantum dot: the area of the red quantum dot is 3:6: 1.
Referring to fig. 3, the shape of the groove of the present invention may be an ellipse. Referring to fig. 4, the shape of the groove of the present invention may be hexagonal. Referring to fig. 5, the grooves of the present invention may be in the shape of a long bar. In addition, the shape of the groove can be triangular, circular, square and the like. Furthermore, the grooves are distributed in an array.
According to the invention, the back surface of the substrate is etched to form the groove, wherein the quantum dots are filled in the groove, so that the volume of the chip is not increased, the gap between the chip and the chip is effectively reduced, and the display effect of the display screen is improved.
The invention can realize full-color display and single-color display on the same chip by filling quantum dots with different colors in the groove, wherein, the chip of the invention only needs to form a light-emitting structure, and the light emitted by the same light-emitting structure can emit light with different colors through the quantum dots with different colors.
Furthermore, the quantum dots are provided with the corresponding filter layers, the filter layers only allow light of the quantum dots with the color to pass through, and light of other colors is reflected to one side of the light-emitting structure, so that no stray light is mixed in the quantum dots, and the purity of light emitted by the chip is ensured.
It should be noted that the filter layer of the present invention has a laminated structure made of Ti2O5And SiO2Are formed alternately. The quantum dots with different colors have different thickness ratios of the corresponding filter layers. Specifically, Ti can be calculated by software simulation3O5And SiO2To define a filter layer reflection defined spectrum.
Specifically, the thickness of the filter layer is a, Ti3O5Of a1, SiO2Has a total thickness of a2, and has a wavelength of b, Ti, of light passing through the filter layer3O5Has a refractive index of k1, SiO2Has a refractive index of k2, wherein a1 is b/(4 × k1), and a2 is b/(4 × k2), i.e., a is b/(4 × k1) + b/(4 × k 2).
For example, Ti3O5Has a refractive index of 2.35, SiO2The refractive index of (a) is 1.457, and the wavelength of blue light is 450nm, the thickness of the first filter layer is 450/(4 × 2.35) +450/(4 × 1.457) is 125.1(nm), the thickness of the second filter layer is 520/(4 × 2.35) +520/(4 × 1.457) is 144.5(nm), and the thickness of the third filter layer is 620/(4 × 2.35) +620/(4 × 1.457) is 172.4 (nm).
Specifically, the quantum dot is prepared from one or more of CdSe, ZnS, CdTe, ZnSe, CuInS and InP, and the particle size of the quantum dot is 5-50 μm.
The particle size of the quantum dot has a certain relation with the size of the groove. Specifically, in order to fill the quantum dots into the grooves, the depth of the grooves is 10-30 μm.
In order to further improve the purity of the light color emitted by the chip, the chip of the present invention further includes a light-blocking layer 50, where the light-blocking layer 50 is disposed on the sidewall of the substrate 10 to block the light emitted by the light-emitting structure from exiting from the side surface of the substrate 10.
In addition, the light blocking layer 50 is also disposed between the grooves to prevent light formed by the quantum dots 40 from exiting from the side walls of the grooves, thereby preventing the light of different colors from mixing.
Preferably, the light blocking layer is made of a light blocking material or a reflective material. The light blocking material is TiO2Or CrO2(ii) a The reflective material is aluminum or silver.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip capable of converting colors, which comprises the following steps:
firstly, forming a light-emitting structure on the front surface of a substrate;
the light emitting structure of the present invention includes a first semiconductor layer provided on a substrate, an active layer and a first electrode provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a reflective layer and a second electrode provided on the second semiconductor layer. The reflective layer of the present invention reflects light emitted from the active layer to the back surface of the substrate to be emitted, that is, the back surface of the substrate is an emitting surface. In order to improve the current spreading performance of the chip, a transparent conductive layer is further arranged between the second semiconductor layer and the reflecting layer, and the second electrode is connected with the transparent conductive layer.
Etching the back surface of the substrate to form a groove;
and etching the back surface of the substrate by adopting a yellow light pattern opening and ICP (inductively coupled plasma) etching process for 10-30 mu m to form grooves in array arrangement. The arrangement mode of the grooves can be single groove, double groove or multi-groove arrangement.
Filling the quantum dots into the grooves;
the groove of the invention has small size, and a certain process technology is needed for accurately filling the quantum dots into the groove and ensuring that the quantum dots do not overflow the groove. Specifically, the colloidal quantum dot solution is dripped into the groove by using the capillary, and is dried at 170-250 ℃.
Specifically, the quantum dot is prepared from one or more of CdSe, ZnS, CdTe, ZnSe, CuInS and InP. The particle size of the quantum dot has a certain relation with the size of the groove. Specifically, in order to fill the quantum dots into the grooves, the particle size of the quantum dots is 5-50 μm.
Fourthly, forming a filter layer on the quantum dots;
the invention adopts the evaporation method to form the filter layer on the quantum dots, wherein, the light formed by the corresponding quantum dots is emitted from the filter layer, and the light of the color other than the quantum dots is reflected to one side of the luminous structure by the filter layer, so that the corresponding quantum dots have no mixed color light.
The filter layer of the invention is of a laminated structure and is made of Ti2O5And SiO2Are formed alternately. The quantum dots with different colors have different thickness ratios of the corresponding filter layers. Specifically, Ti can be calculated by software simulation2O5And SiO2To define a filter layer reflection defined spectrum.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A flip LED chip capable of converting colors comprises a substrate and a light-emitting structure arranged on the front surface of the substrate, and is characterized in that a groove is formed in the back surface of the substrate, quantum dots are filled in the groove, a filter layer is arranged on the groove, covers the quantum dots, and filters light waves passing through the quantum dots;
the light formed by the corresponding quantum dots is emitted from the filter layer, and the light of the colors except the quantum dots is reflected by the filter layer to one side of the light-emitting structure, so that the corresponding quantum dots are mixed with the non-stray light.
2. The color-convertible flip-chip LED chip of claim 1, wherein the back surface of the substrate is provided with at least 3 grooves, the grooves are respectively filled with blue quantum dots, green quantum dots and red quantum dots, the blue quantum dots are covered with a first filter layer, the green quantum dots are covered with a second filter layer, and the red quantum dots are covered with a third filter layer;
blue light formed by the blue quantum dots is emitted from the first filter layer, and light of colors other than blue is reflected to one side of the light-emitting structure by the first filter layer;
green light formed by the green quantum dots is emitted from the second filter layer, and light of colors other than green is reflected to one side of the light-emitting structure by the second filter layer;
the red light formed by the red quantum dots is emitted from the third filter layer, and the light of the colors except the red color is reflected to one side of the light-emitting structure by the third filter layer.
3. The color switchable flip LED chip of claim 2 wherein the ratio of the area of the blue quantum dots: area of green quantum dot: the area of the red quantum dot is 3:6: 1.
4. The color switchable flip LED chip of claim 1 or 2 wherein the filter layer is a laminate of Ti3O5And SiO2Alternately forming; wherein the content of the first and second substances,
the thickness of the filter layer is a, Ti3O5Of a1, SiO2Has a total thickness of a2, and has a wavelength of b, Ti, of light passing through the filter layer3O5Has a refractive index of k1, SiO2Has a refractive index of k2, wherein a1 is b/(4 × k1), and a2 is b/(4 × k2), i.e., a is b/(4 × k1) + b/(4 × k 2).
5. The color-convertible flip-chip LED chip according to claim 1, wherein the quantum dots are made of one or more of CdSe, ZnS, CdTe, ZnSe, CuInS and InP, and have a particle size of 5 to 50 μm.
6. The color switchable flip LED chip of claim 1 further comprising a light blocking layer disposed on the sidewall of the substrate to block light emitted by the light emitting structure from exiting the side of the substrate.
7. The color switchable flip LED chip of claim 6 wherein the light blocking layer is further disposed between the recesses to prevent light passing through the formation of the quantum dots from exiting the sidewalls of the recesses to avoid color mixing of the different colors of light.
8. The color switchable flip chip LED chip of claim 6 wherein the light blocking layer is made of a light blocking material or a reflective material;
the light blocking material is TiO2Or CrO2；
The reflective material is aluminum or silver.
9. A method for manufacturing a flip-chip LED chip with convertible color according to any one of claims 1 to 8, comprising:
forming a light emitting structure on the front surface of the substrate;
etching the back surface of the substrate to form a groove;
filling quantum dots into the grooves;
and forming a filter layer on the quantum dots, wherein light formed by the corresponding quantum dots is emitted from the filter layer, and light of colors other than the quantum dots is reflected by the filter layer to one side of the light-emitting structure, so that no stray light is mixed into the light-emitting structure corresponding to the quantum dots.
10. The method for manufacturing the flip-chip LED chip capable of converting colors according to claim 9, wherein the colloidal quantum dot solution is dripped into the groove by a capillary and dried at 170-250 ℃.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113206176A (en) * | 2021-04-23 | 2021-08-03 | 武汉大学 | Selective etching epitaxial Micro-LED chip and design and preparation method thereof |
| WO2022000480A1 (en) * | 2020-07-03 | 2022-01-06 | 深圳市思坦科技有限公司 | Display module manufacturing method and display screen |
| WO2023010344A1 (en) * | 2021-08-04 | 2023-02-09 | 重庆康佳光电技术研究院有限公司 | Led chip, display panel and manufacturing method, and electronic device |
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