CN106920790A - A kind of full-color micro-display device and preparation method thereof - Google Patents
A kind of full-color micro-display device and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
A kind of full-color micro-display device that the present invention is provided; realized by flip LED chips array and quantum dot color switch technology; by flip LED chips excitation quantum point; red green blue tricolor is produced respectively; send three photochromic GaN base ray structures of RGB and constitute a pixel; the flip LED chips be based on Sapphire Substrate LED chip and face-down bonding to drive circuit substrate on; quantum dot for Color Conversion is filled in the groove of Sapphire Substrate exiting surface, the upper protection materials of covering after filling quantum dot.The full-color micro-display device prepared prepared by the method for full-color micro-display device provided using the present invention has small volume, high resolution, the Color control advantage such as simply.
Description
Technical field
Preparation technology field and technology of quantum dots application field the invention belongs to LED flip chip, and in particular to a kind of
Full-color micro-display device and preparation method thereof.
Background technology
In with the production and life that reality is progressed on minitype projection machine and wearable device, micro-display device
Using more and more extensively, to the demand of micro-display device with require also to gradually step up, resolution ratio higher, gentlier small system,
Full-color display etc..Because the size of LED chip can reach micron order, the micro-display device based on LED chip compared to
Other micro display technology such as DLP, LCoS etc., with resolution ratio is higher, system is lighter small simple and lowers the excellent of energy consumption cost
Point.
Current LED chip microarray is mainly accomplished that the micro-display device of monochrome.In the research of LED monochrome micro-displays
On, JamesR.Bonar of mLED companies et al. be successfully prepared in 2016 high brightness that pixel spot size is 6 μm and
640 × 360 array micro-displays of high-contrast.LED-based micro-display device will realize full-color display, have at present two kinds can
The scheme of energy：One is on the basis of LED monochrome micro display chips, to coat fluorescent powder membrane, and excited white light is coated with RGB three
The optical filtering membrane array of color base color；Two is the LED array for preparing red-green-blue on the same substrate.The first solution process
It is relatively easy, but the presence of filter coating reduces effective light intensity, causes the loss of energy larger, and between easily causing pixel
Cross-interference issue；Second scheme technique is complex, because cannot once grow on the same substrate that RGB three is sent
The quantum well structure of color is planted, and because the threshold voltage of red, green and blue LED is different, drive circuit becomes complicated, this scheme
The micro display chip pixel resolution of realization is difficult to improve.Therefore, how to be realized using monochromatic LED chip microarray full-color
Micro display and the resolution ratio for improving micro display chip are the huge challenges of LED micro display field faces.
Quantum dot (quantum dot) is the nano material of quasi-zero dimension (quasi-zero-dimensional), by a small amount of
Atom constituted, three sizes of dimension all at 100 nanometers (nm) below.Some optical characteristics of quantum dot are especially suitable for using
In photochromic conversion is realized, first, the emission spectrum of quantum dot can be controlled by changing the size of quantum dot, be passed through
Changing the size and its chemical composition of quantum dot can make its emission spectrum cover whole visible region；Secondly, quantum dot tool
There is exciting light spectrum width and continuously distributed, and emission spectrum is narrow and symmetrical, photochemical stability is high, it is superior glimmering that fluorescence lifetime is long etc.
Light characteristic.
The content of the invention
It is an object of the invention to technology of preparing and technology of quantum dots by a kind of flip LED chips, in chip layer
Photochromic conversion is realized on face so that micro display LED chip it is smaller, be used to realize that a kind of size is small and high-resolution
Full-color micro-display device.
To achieve these goals, the technical solution adopted by the present invention is as follows：
A kind of full-color micro-display device, including the substrate with drive circuit, face-down bonding are in the base with drive circuit
Array-type LED chip and Sapphire Substrate on plate, the array-type LED chip be arranged in same Sapphire Substrate and
Launch same spectrum, it is characterised in that：Be provided with isolation channel between the array-type LED chip, the isolation channel it is interior
Portion and two side are provided with insulating barrier and light blocking layer, and the material of insulating barrier is SiO2Or AlN, thickness is 500~2000nm；It is in the light
The material of layer is Cr/Al or Cr/Ag, and thickness is 100~500nm；Each LED chip include three GaN base ray structures and
Welding electrode, the welding electrode is used to connect GaN base ray structure and the substrate with drive circuit, the Sapphire Substrate
Exiting surface be provided with groove, the position and size of the groove and the GaN base ray structure correspond, each LED core
The corresponding groove of three GaN base ray structures of piece is filled for exciting three kinds of quantum dots of light of red, green, blue, quantum dot respectively
The last layer protected material bed of material is covered after filling.The present invention realizes full-color micro display using monochromatic LED chip microarray, made
The standby full-color micro-display device advantage such as have small volume, high resolution, Color control simple.
Preferably, the groove is located at directly over GaN base ray structure, and groove dimensions are 5~40 μm, and gash depth is 5
~20 μm.
Present invention also offers a kind of preparation method of full-color micro-display device, comprise the following steps：
(1) LED of epitaxial growth GaN or AlGaN on a sapphire substrate, the GaN epitaxy piece includes successively
Cushion, N-GaN layers, active layer and P-GaN layers；
(2) deposition of transparent conductive film layer is continued on P-GaN layers as contact layer；
(3) N-GaN layers is etched into LED, three needed for forming each pixel GaN base ray structure；
(4) with ICP etch pixel in LED between isolation channel, i.e., etch into Sapphire Substrate, shape always
Into the display of full-color micro display pixel；
(5) depositing insulating layer and light blocking layer in the isolation channel between pixel and two side；
(6) N electrode is deposited, N electrode is deposited using Ti/Al/Ni/Au, thickness is 1~2um；
(7) P electrode is deposited, used as reflection layer structure, redeposited Ti/Au or Ni/Au is deposited for P electrode elder generation's depositing Al or Ag
Thickness is 1~2 μm；
(8) Sapphire Substrate is carried out it is thinning, it is thinning after thickness be 80 μm~150 μm；
(9) exiting surface in Sapphire Substrate etches the groove for filling quantum dot；
(10) with drop coating or the method for 3D printing, filling can launch RGB respectively in three grooves of each pixel
Three kinds of quantum dots of the light of color；
(11) a protected material bed of material is covered after having filled quantum dot on the surface of Sapphire Substrate；
(12) on LED chip face-down bonding to the substrate with drive circuit, the drive circuit on substrate can be independent
Control three GaN base ray structures in each pixel.
Preferably, three GaN base ray structures are shaped as rectangle, three light-emitting areas of GaN base ray structure
The ratio for accounting for total pixel area is 1:1:1.
Preferably, the primitive shape is rectangle, and Pixel Dimensions are 40 μm of 40 μ m.
Preferably, the insulating barrier uses SiO2 or AlN, and thickness is 500~2000nm, light blocking layer using Cr/Al or
Cr/Ag metals, thickness is preferably 100nm~500nm.
Preferably, the groove directly etches sapphire and is formed, or is etched with BOE after the first SiO2 of deposition on sapphire
Formed, the groove is located at three surfaces of GaN base ray structure in each pixel, shape size and three GaN bases light
Structure correspondence, the depth of the groove is 10~20 μm.
Preferably, the protection materials layer choosing SiO2Or resin, the protected material bed of material is SiO2When, thickness be 100nm~
500nm。
The present invention directly forms groove for filling the side of quantum dot using in the Sapphire Substrate in LED chip light extraction face
Method, realizes the convenient collocation for accurately controlling red green blue tricolor quantum dot, allows it to be fixed on relevant position, is easily controlled hair
Smooth surface shape, deposits the metal level that is in the light in the isolation channel between pixel, the crosstalk between pixel is also reduced to a certain extent, this
Kind of technique is easily achieved, at the same take full advantage of quantum dot it is small the characteristics of, be capable of achieving in chip level full-color, make micro display
The size of chip can be minimized further, and can ensure even to improve the resolution ratio of full-color micro display.
Brief description of the drawings
Fig. 1 is full-color micro display pel array overlooking the structure diagram of the invention, 4 × 4 pixels, and each pixel is by red (R)
Green (G) indigo plant (B) three LED unit compositions, fill the quantum dot for exciting red, green, blue photochromic respectively in three LED units；
Fig. 2 is LED chip array schematic diagram of the present invention for excitation quantum point, plan structure when electrode faces up
Figure, the red green blue tricolor of each pixel is excited by three corresponding GaN base ray structures respectively, three of same pixel
There are insulation and the isolation channel being in the light between the common N poles of GaN base ray structure, different pixels；
Fig. 3 is the section figure structure schematic representation of full-color micro-display device of the invention, and profile position is located at the dotted line position of Fig. 2
Put, therefore each pixel only sees two LED units of G and B.
Specific embodiment
Specific embodiment of the invention is described further below in conjunction with the accompanying drawings：
As shown in figure 1, each pixel is made up of red (R) green (G) indigo plant (B) three LED units, LED unit is sent out including GaN base
Photo structure groove corresponding with its, fills for exciting three kinds of quantum of light of red, green, blue respectively in three grooves of each pixel
Point.
Fig. 2 is the GaN base ray structure array schematic diagram for the quantum dot for exciting red, green, blue photochromic, each pixel
Redgreenblue is excited by three corresponding GaN base ray structures respectively.For the GaN base ray structure array of excitation quantum point
It is to be prepared in same Sapphire Substrate, and launches same spectrum, three GaN bases hair of each pixel in same Sapphire Substrate
Photo structure excites the quantum dot of different emission spectrum to send red green blue tricolor respectively.Wherein three light-emitting areas of LED unit
The ratio for taking whole pixel light emission area can be adjusted suitably, and the difference having to adapt to quantum dot difference emission spectrum excites effect
Rate.The common N poles 202 of GaN base ray structure of same pixel, three P electrodes of GaN base ray structure 201 of drive circuit control,
203 and 204, the isolation channel 205 for having for insulating and being in the light between different pixels.
Fig. 3 is the section figure structure schematic representation of full-color micro-display device of the invention, and profile position is located at the dotted line position of Fig. 2
Put, therefore each pixel only sees two LED units of G and B, full-color micro-display device of the invention includes carrying drive circuit
Substrate, welding electrode 308,309 and 310, GaN base or AlGaN bases ray structure 307, Sapphire Substrate 303, positioned at blue precious
The groove 301 and 302 of the full quantum dot of stone lining bottom exiting surface side filling, covers the exiting surface protection quantum dot of Sapphire Substrate
The protected material bed of material 304.The present invention by chip level realize photochromic conversion so that the size of micro display LED chip more
It is small, it is used to realize that a kind of size is small and high-resolution full-color micro-display device.
Incorporated by reference to Fig. 1-Fig. 3, the present invention provides a kind of full-color micro-display device, including the substrate with drive circuit
300th, face-down bonding is in array-type LED chip and Sapphire Substrate 303 on the substrate 300 with drive circuit, array
LED chip is arranged in same Sapphire Substrate and launches same spectrum, and isolation channel 205 is provided between LED chip, each
LED chip includes three GaN base ray structures 307 and welding electrode 308,309,310, and welding electrode is used to connect GaN base hair
Photo structure 307 and the substrate with drive circuit 300, the exiting surface of Sapphire Substrate 303 are provided with groove 301,302, groove
301st, 302 and GaN base ray structure 307 position and size correspond, three GaN base ray structures of each LED chip
307 corresponding grooves are filled for exciting three kinds of quantum dots of light of red, green, blue respectively, are covered last layer after quantum dot filling and are protected
Protective material layer 304.Realized by flip LED chips array and quantum dot color switch technology, by flip LED chips excitation quantum
Point, produces red green blue tricolor respectively, sends three photochromic GaN base ray structures of RGB and constitutes a pixel, flip LED
Chip be based on Sapphire Substrate LED chip and face-down bonding to drive circuit substrate on, for Color Conversion
Quantum dot be filled in the groove of Sapphire Substrate exiting surface, the upper protection materials of covering after filling quantum dot.What the present invention was provided
The full-color micro display chip advantage such as have small chip volume, high resolution, Color control simple.
Quantum dot absorption spectrum is corresponding with the emission spectrum of LED chip, and its emission spectrum is accordingly then RGB three
Primary colors, the preferred CdSe quantum dot of quantum dot can reach the purpose for changing emission spectrum by changing its scale size and composition.
In one embodiment of the invention, there is isolation channel 205 each side of pixel four, and isolation channel etches away GaN base and lights
Structure is until Sapphire Substrate.In isolation channel 205 between pixel and two side sets insulating barrier 305 and light blocking layer 306, absolutely
The preferred SiO of material of edge layer2Or AlN, thickness is preferably 500~2000nm；The material preferred Cr/Al or Cr/Ag of light blocking layer,
Thickness is preferably 100~500nm.In the isolation channel 205 and four wall depositing insulating layers of each pixel, further exist
Redeposition is in the light metal-layer structure on insulating barrier, while reducing the optical crosstalk between pixel to reach, plays a part of reflector,
Increase light extraction and allow light extraction to collimate.
In one embodiment of the invention, the preferred graphical sapphire substrate of Sapphire Substrate.
In one embodiment of the invention, the groove is formed by ICP etching sapphires or deposited on a sapphire substrate
SiO2Etched after layer and formed, the Sapphire Substrate before groove is formed by reduction processing, it is thinning after thickness be 100 μm.
The groove is located at directly over GaN base ray structure, and groove dimensions are 5~40 μm, and gash depth is 5~20 μm.
In one embodiment of the invention, the protected material bed of material uses SiO2Or organic resin is made.
Present invention also offers a kind of preparation method of full-color micro-display device, step is as follows：
(1) in Epitaxial growth GaN or the AlGaN LED of Sapphire Substrate 303, GaN epitaxy piece includes slow successively
Rush layer, N-GaN layers, active layer and P-GaN layers.
(2) continue deposition of transparent conductive film layer on P-GaN layers as contact layer, for P-GaN and reflecting layer metal
It is respectively formed good Ohmic contact, contact layer preferred ITO and ZnO, but not limited to this.
(3) N-GaN is etched into LED, three needed for forming each pixel LED chip, three chips
Preferably rectangular in shape, but not limited to this, the ratio that the light-emitting area of three chips accounts for total pixel area is preferably 1:1:1, but
Not limited to this.
(4) with ICP etch pixel in LED between isolation channel 205, i.e., etch into sapphire lining always
Bottom, forms the display of full-color micro display pixel, and primitive shape is preferably rectangular, but is not limited to rectangle, and Pixel Dimensions are preferably 40 μ
M × 40 μm, but not limited to this.
(5) depositing insulating layer 305 and light blocking layer 306 in the isolation channel between pixel and raceway groove two side, insulation
The preferential SiO of layer2Or AlN, thickness preferably 500~2000nm, the preferential Cr/Al or Cr/Ag metals of light blocking layer, thickness 100nm~
500nm, light blocking layer may be alternatively configured catoptric arrangement, preferably Al or Ag as reflection layer structure, behind depositing Ti/Au or Ni/Au, sink
1~2 μm of thickness of product.Light blocking layer can to a certain extent reduce the crosstalk of light between pixel.
(6) N electrode 202, the preferred Ti/Al/Ni/Au of N electrode, but not limited to this are deposited, gross thickness is 1~2um.
(7) P electrode 201,203 and 204 is deposited, P electrode also needs to play the function of reflected light, and preferably Al or Ag are used as anti-
Penetrate Rotating fields, behind depositing Ti/Au or Ni/Au, deposit thickness be 1~2 μm.
(8) Sapphire Substrate of micro display flip LED chips is carried out it is thinning, it is thinning after thickness be preferably 80 μm~
150μm。
(9) exiting surface in Sapphire Substrate etches groove 301 and 302 for filling quantum dot etc., can be direct
Etching sapphire is formed, it is also possible to first etched to be formed with BOE after deposition SiO2 on sapphire, groove is located at three in each pixel
The surface of individual LED chip, shape size is corresponding with three LED chips, and gash depth is preferably 10~20 μm.
(10) with drop coating or the method for 3D printing, filling can launch RGB three respectively in three grooves of each pixel
Plant the quantum dot of the light of color.
(11) the heavy protective layer of chip surface covering one again, the preferred SiO2 of protective layer or resin, selection have been filled after quantum dot
During SiO2, the preferred 100nm~500nm of thickness.
(12) on micro display flip LED chips face-down bonding to the substrate with drive circuit, the preferred Si substrates of substrate,
But not limited to this, drive circuit on substrate can be with three LED chips in independent control each pixel.
It should be appreciated that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, without being construed as limiting the invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent, improvement etc., should be included within the scope of the present invention.Additionally, appended claims purport of the present invention
In the whole changes covered in the equivalents for falling into scope and border or this scope and border and repair
Change example.
Claims (9)
1. a kind of full-color micro-display device, including the substrate with drive circuit, face-down bonding are in the substrate with drive circuit
On array-type LED chip and Sapphire Substrate, the array-type LED chip is arranged in same Sapphire Substrate and sends out
Penetrate same spectrum, it is characterised in that：Isolation channel, the inside of the isolation channel are provided between the array-type LED chip
Two side is provided with insulating barrier and light blocking layer, the material of insulating barrier is SiO2Or AlN, thickness is 500~2000nm；Light blocking layer
Material be Cr/Al or Cr/Ag, thickness be 100~500nm；Each LED chip includes three GaN base ray structures and weldering
Receiving electrode, the welding electrode is used to connect GaN base ray structure and the substrate with drive circuit, the Sapphire Substrate
Exiting surface is provided with groove, and the position and size of the groove and the GaN base ray structure correspond, each LED chip
The corresponding groove of three GaN base ray structures fill respectively for exciting three kinds of quantum dots of light of red, green, blue, quantum dot to fill out
Last layer protective layer is covered after filling.
2. full-color micro-display device according to claim 1, it is characterised in that：The groove is located at GaN base ray structure
Surface, groove dimensions are 5~40 μm, and gash depth is 5~20 μm.
3. a kind of preparation method of full-color micro-display device, it is characterised in that comprise the following steps：
(1) epitaxial growth GaN or AlGaN LEDs on a sapphire substrate, the GaN epitaxy piece include buffering successively
Layer, N-GaN layers, active layer and P-GaN layers；
(2) deposition of transparent conductive film layer is continued on P-GaN layers as contact layer；
(3) N-GaN layers is etched into LED, three needed for forming each pixel GaN base ray structure；
(4) with ICP etch pixel in LED between isolation channel, i.e., etch into Sapphire Substrate always, form complete
The display of color micro display pixel；
(5) depositing insulating layer and light blocking layer in the isolation channel between pixel and two side；
(6) N electrode is deposited, N electrode is deposited using Ti/Al/Ni/Au, thickness is 1~2um；
(7) deposit P electrode, P electrode elder generation depositing Al or Ag as reflection layer structure, redeposited Ti/Au or Ni/Au, deposit thickness
It is 1~2 μm；
(8) Sapphire Substrate is carried out it is thinning, it is thinning after thickness be 80 μm~150 μm；
(9) exiting surface in Sapphire Substrate etches the groove for filling quantum dot；
(10) filling can launch three kinds of quantum dots of the light of color of RGB respectively in three grooves of each pixel；
(11) a protected material bed of material is covered after having filled quantum dot on the surface of Sapphire Substrate.
(12) on LED chip face-down bonding to the substrate with drive circuit, the drive circuit on substrate can be with independent control
Three GaN base ray structures in each pixel.
4. the preparation method of full-color micro-display device according to claim 3, it is characterised in that：Three GaN bases hair
Photo structure is shaped as rectangle, and the ratio that the light-emitting area of three GaN base ray structures accounts for total pixel area is 1:1:1.
5. the preparation method of full-color micro-display device according to claim 3, it is characterised in that：The primitive shape is square
Shape, Pixel Dimensions are 40 μm of 40 μ m.
6. the preparation method of full-color micro-display device according to claim 3, it is characterised in that：The insulating barrier is used
SiO2Or AlN, thickness is 500~2000nm, and light blocking layer uses Cr/Al or Cr/Ag metals, thickness is preferably 100~
500nm。
7. the preparation method of full-color micro-display device according to claim 3, it is characterised in that：The groove is directly etched
Sapphire is formed, or first deposits SiO on sapphire2Etch to be formed with BOE afterwards, the groove is located at three in each pixel
The surface of GaN base ray structure, shape size is corresponding with three GaN base ray structures, and the depth of the groove is 10~20 μ
m。
8. the preparation method of full-color micro-display device according to claim 3, it is characterised in that：The protected material bed of material is
SiO2, thickness is 100nm~500nm.
9. the preparation method of full-color micro-display device according to claim 3, it is characterised in that：The protected material bed of material is
Resin.
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| CN114050170A (en) * | 2021-08-19 | 2022-02-15 | 重庆康佳光电技术研究院有限公司 | Display panel and method for manufacturing the same |
| CN114122220A (en) * | 2021-08-24 | 2022-03-01 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
| CN114203877A (en) * | 2021-12-10 | 2022-03-18 | 东莞市中晶半导体科技有限公司 | Light-emitting chip manufacturing method and light-emitting chip |
| US11296257B2 (en) | 2018-02-28 | 2022-04-05 | Huawei Technologies Co., Ltd. | Light-emitting diode chip and preparation method therefor |
| CN114300602A (en) * | 2021-12-30 | 2022-04-08 | 深圳市思坦科技有限公司 | Full-color Micro-LED, preparation method thereof and display device |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1442836A (en) * | 2003-04-11 | 2003-09-17 | 田志辉 | Colour mixture full coloured LED display module |
| CN102214651A (en) * | 2011-05-25 | 2011-10-12 | 映瑞光电科技(上海)有限公司 | LED (light emitting diode) pixel unit device structure and preparation method thereof |
| CN103579461A (en) * | 2013-11-08 | 2014-02-12 | 中国科学院半导体研究所 | Method for manufacturing wafer full-color LED display array |
| CN104733593A (en) * | 2013-12-18 | 2015-06-24 | 晶科电子（广州）有限公司 | Quantum dot-based white LED device and manufacturing method thereof |
| CN105047780A (en) * | 2015-09-01 | 2015-11-11 | 山东浪潮华光光电子股份有限公司 | Parallel-connected GaN-based LED chip preparation method |
| CN105529346A (en) * | 2014-09-30 | 2016-04-27 | 业鑫科技顾问股份有限公司 | Display panel and method for manufacturing same |
| CN105679196A (en) * | 2016-04-11 | 2016-06-15 | 深圳市丽格特光电有限公司 | Full-color high-resolution micro-display chip based on gallium nitride LEDs and quantum dot technology |
| CN106205401A (en) * | 2016-07-21 | 2016-12-07 | 长春希达电子技术有限公司 | A kind of integration packaging LED display module and preparation method thereof |
-
2017
- 2017-04-01 CN CN201710214037.8A patent/CN106920790A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1442836A (en) * | 2003-04-11 | 2003-09-17 | 田志辉 | Colour mixture full coloured LED display module |
| CN102214651A (en) * | 2011-05-25 | 2011-10-12 | 映瑞光电科技(上海)有限公司 | LED (light emitting diode) pixel unit device structure and preparation method thereof |
| CN103579461A (en) * | 2013-11-08 | 2014-02-12 | 中国科学院半导体研究所 | Method for manufacturing wafer full-color LED display array |
| CN104733593A (en) * | 2013-12-18 | 2015-06-24 | 晶科电子（广州）有限公司 | Quantum dot-based white LED device and manufacturing method thereof |
| CN105529346A (en) * | 2014-09-30 | 2016-04-27 | 业鑫科技顾问股份有限公司 | Display panel and method for manufacturing same |
| CN105047780A (en) * | 2015-09-01 | 2015-11-11 | 山东浪潮华光光电子股份有限公司 | Parallel-connected GaN-based LED chip preparation method |
| CN105679196A (en) * | 2016-04-11 | 2016-06-15 | 深圳市丽格特光电有限公司 | Full-color high-resolution micro-display chip based on gallium nitride LEDs and quantum dot technology |
| CN106205401A (en) * | 2016-07-21 | 2016-12-07 | 长春希达电子技术有限公司 | A kind of integration packaging LED display module and preparation method thereof |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393938A (en) * | 2017-08-12 | 2017-11-24 | 左洪波 | Micro LED blue light display screen method for packing |
| CN107357085A (en) * | 2017-08-12 | 2017-11-17 | 左洪波 | The method for packing of blue light TFT LCD displays |
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| CN108281092A (en) * | 2018-01-24 | 2018-07-13 | 福州大学 | A kind of micron order LED shows the micro-structure and its manufacturing method of light efficiency extraction |
| US11296257B2 (en) | 2018-02-28 | 2022-04-05 | Huawei Technologies Co., Ltd. | Light-emitting diode chip and preparation method therefor |
| CN108447965A (en) * | 2018-04-12 | 2018-08-24 | 广东普加福光电科技有限公司 | A kind of preparation method of full-color micro-display device |
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