CN109285939B - Red light flip chip and manufacturing method thereof - Google Patents
Red light flip chip and manufacturing method thereof Download PDFInfo
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- CN109285939B CN109285939B CN201811406143.7A CN201811406143A CN109285939B CN 109285939 B CN109285939 B CN 109285939B CN 201811406143 A CN201811406143 A CN 201811406143A CN 109285939 B CN109285939 B CN 109285939B
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- light
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- sapphire substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention relates to the technical field of chip manufacturing, and particularly discloses a red light flip chip, wherein the red light flip chip comprises: the light-emitting epitaxial device comprises a sapphire substrate, wherein a light-emitting epitaxial layer is arranged on the lower surface of the sapphire substrate, a reflecting layer is arranged on the lower surface and the side face of the light-emitting epitaxial layer, an electrode is arranged on the lower surface of the reflecting layer, red fluorescent powder colloid is coated on the upper surface of the sapphire substrate, the side face of the sapphire substrate and the side face of the reflecting layer, and the red fluorescent powder colloid can convert the light color emitted by the light-emitting epitaxial layer into red color and emit the red color. The invention also discloses a manufacturing method of the red light flip chip. The red light flip chip provided by the invention has the advantages of low cost and high yield, and provides possibility for full-color display of the RGB flip chip.
Description
Technical Field
The invention relates to the technical field of chip manufacturing, in particular to a red light flip chip and a manufacturing method of the red light flip chip.
Background
In recent years, light Emitting Diodes (LEDs) are the most important light source technology, and particularly in the aspect of display technology, small-pitch display screens based on LEDs gradually take the mainstream place by virtue of their advantages of high color gamut, high brightness, seamless splicing and the like. In the future, as the small-pitch LED display screen continues to be converted to a larger density, the currently used LED front-mounted chip will be gradually replaced by the LED flip-chip. The flip chip has high welding strength without wire bonding, so that high-density integration is easy to realize.
Among red, green and blue (RGB) chips used in the display screen, flip chips of blue light and green light are relatively easy to implement, and both chips belong to GaN chips of a sapphire substrate, and the flip chip of this structure is shown in fig. 1. Fig. 1 is a side view of a typical blue-green LED flip chip. 1 is a sapphire substrate, 2 is a GaN epitaxial layer, and 3 is a chip electrode. When in use, the electrode is welded with the substrate face down, and since the sapphire is a transparent substrate, light emitted by the epitaxial layer is emitted from the front side through the sapphire. However, the flip chip of the red LED is much more complicated in manufacturing process. The main reason is that the substrate for red epitaxy is a GaAS substrate rather than sapphire. Since the GaAs substrate is opaque, in order to achieve the front side light emission required for flip-chip, the red light epitaxial layer must be transferred to the sapphire substrate via substrate transfer, and then the original GaAs is stripped. Fig. 2 shows a current process for manufacturing a red light flip chip. First, a red light epitaxial layer is grown on a GaAs substrate, 11 being the epitaxial layer and 12 being the GaAs substrate. And then bonded to the epitaxial layer by bonding using a sapphire substrate, 13 being the sapphire substrate. And then the GaAs substrate is removed by chemical or mechanical polishing defending. Finally, an electrode 14 is formed on the epitaxial layer.
The red light manufacturing process involves whole wafer substrate bonding, substrate transfer and substrate removal. The actual production process is very complicated, the substrate can warp due to stress in the transfer process, epitaxial layer cracks are very easy to generate in the transfer, or surface bonding is uneven in the transfer, and the reject ratio of a final product is high, so that the price of the existing red light flip chip is high, and the use and popularization of the RGB full-color flip display screen are affected.
Therefore, how to manufacture the red light flip chip with low cost and high yield is a technical problem to be solved by the technicians in the field.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a red light flip chip and a manufacturing method thereof so as to solve the problems in the prior art.
As a first aspect of the present invention, there is provided a red light flip chip, wherein the red light flip chip includes: the light-emitting epitaxial device comprises a sapphire substrate, wherein a light-emitting epitaxial layer is arranged on the lower surface of the sapphire substrate, a reflecting layer is arranged on the lower surface and the side face of the light-emitting epitaxial layer, an electrode is arranged on the lower surface of the reflecting layer, red fluorescent powder colloid is coated on the upper surface of the sapphire substrate, the side face of the sapphire substrate and the side face of the reflecting layer, and the red fluorescent powder colloid can convert the light color emitted by the light-emitting epitaxial layer into red color and emit the red color.
Preferably, the light-emitting epitaxial layer comprises U-GaN, N-GaN, a quantum well light-emitting layer and P-GaN which are sequentially arranged from top to bottom.
Preferably, the light emitting epitaxial layer comprises a blue light emitting epitaxial layer.
Preferably, the sapphire substrate comprises a flat piece sapphire substrate or a patterned sapphire substrate.
Preferably, the reflective layer comprises a DBR reflective layer comprising SiO 2 And TiO 2 。
Preferably, the red phosphor colloid comprises a transparent colloid and red phosphor or red quantum dot material arranged in the transparent colloid.
As a second aspect of the present invention, there is provided a method of manufacturing a red light flip chip, wherein the method of manufacturing a red light flip chip includes:
providing a sapphire substrate;
forming a light-emitting epitaxial layer on the sapphire substrate;
depositing a reflective layer on the upper surface and sides of the light emitting epitaxial layer;
manufacturing an electrode on the upper surface of the reflecting layer;
transferring the structure after manufacturing the electrode onto a film substrate, wherein the electrode is positioned below and is in contact with the film substrate, and the sapphire substrate is positioned above;
coating red fluorescent powder colloid on the upper surface of the sapphire substrate, the side wall of the sapphire substrate and the side surface of the reflecting layer;
and curing and cutting to obtain single red flip chips.
Preferably, the curing comprises heating or ultraviolet irradiation.
Preferably, the light emitting epitaxial layer comprises a blue light emitting epitaxial layer.
Preferably, the film substrate comprises an organic film.
According to the red light flip chip provided by the invention, the red fluorescent powder colloid is arranged on the sapphire substrate, so that the color of light emitted by the light-emitting epitaxial layer can be converted into red to be emitted, and the reflective layer is arranged to prevent the light of the light-emitting epitaxial layer from leaking from the electrode surface.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
fig. 1 is a schematic diagram of a prior art blue-green LED flip chip.
Fig. 2 is a process diagram of a red light flip chip in the prior art.
Fig. 3 is a schematic structural diagram of a red light flip chip provided by the present invention.
Fig. 4 is a flowchart of a method for manufacturing a red light flip chip according to the present invention.
Fig. 5 is a schematic diagram of formation of a light emitting epitaxial layer in the process of manufacturing a red light flip chip according to the present invention.
Fig. 6 is a schematic diagram of forming an electrode in the manufacturing process of the red light flip chip provided by the invention.
Fig. 7 is a schematic diagram of reverse molding in the process of manufacturing a red light flip chip according to the present invention.
Fig. 8 is a schematic diagram of formation of red phosphor colloid in the process of manufacturing a red flip chip according to the present invention.
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
As a first aspect of the present invention, there is provided a red light flip chip, wherein, as shown in fig. 3, the red light flip chip includes: the light-emitting epitaxial layer 120 is arranged on the lower surface of the sapphire substrate 110, the reflecting layer 130 is arranged on the lower surface and the side face of the light-emitting epitaxial layer 120, the electrode 140 is arranged on the lower surface of the reflecting layer 130, the red fluorescent powder colloid 150 is coated on the upper surface of the sapphire substrate 110, the side face of the sapphire substrate 110 and the side face of the reflecting layer 130, and the red fluorescent powder colloid 150 can convert the light emitted by the light-emitting epitaxial layer 120 into red to emit.
According to the red light flip chip provided by the invention, the red fluorescent powder colloid is arranged on the sapphire substrate, so that the color of light emitted by the light-emitting epitaxial layer can be converted into red to be emitted, and the reflective layer is arranged to prevent the light of the light-emitting epitaxial layer from leaking from the electrode surface.
Specifically, the light emitting epitaxial layer 120 includes U-GaN, N-GaN, a quantum well light emitting layer, and P-GaN sequentially disposed from top to bottom.
Specifically, the light emitting epitaxial layer 120 includes a blue light emitting epitaxial layer.
The light emitting epitaxial layer 120 may be a blue light emitting epitaxial layer, that is, may emit blue light, or may be another color light emitting epitaxial layer, for example, green light, violet light, etc., and the blue light emitting epitaxial layer is generally selected because of its highest light emitting efficiency.
Specifically, the sapphire substrate 110 includes a flat sapphire substrate or a patterned sapphire substrate.
Specifically, the reflective layer 130 includes a DBR reflective layer including SiO 2 And TiO 2 。
The DBR reflection layer structure is composed of SiO 2 And TiO 2 The multi-layer structure is formed by stacking multiple layers, and the thickness is 1-5 microns. Through reasonable design, the reflectivity of the DBR reflection layer to blue light reaches over 98 percent, and the blue light can be prevented from leaking from the electrode surface.
Specifically, the red phosphor colloid 150 includes a transparent colloid and a red phosphor or a red quantum dot material disposed in the transparent colloid.
As a second aspect of the present invention, there is provided a method of manufacturing a red light flip chip, wherein the method of manufacturing a red light flip chip, as shown in fig. 4, includes:
s110, providing a sapphire substrate;
s120, forming a light-emitting epitaxial layer on the sapphire substrate;
s130, depositing a reflecting layer on the upper surface and the side surface of the light-emitting epitaxial layer;
s140, manufacturing an electrode on the upper surface of the reflecting layer;
s150, transferring the structure after electrode manufacturing to a film substrate, wherein the electrode is positioned below and is in contact with the film substrate, and the sapphire substrate is positioned above;
s160, coating red fluorescent powder colloid on the upper surface of the sapphire substrate, the side wall of the sapphire substrate and the side surface of the reflecting layer;
s170, solidifying and cutting to obtain a single red flip chip.
According to the manufacturing method of the red light flip chip, the red fluorescent powder colloid is arranged on the sapphire substrate, so that the color of light emitted by the light-emitting epitaxial layer can be converted into red, the light emitted by the light-emitting epitaxial layer can be prevented from leaking from the electrode surface by arranging the reflecting layer, the manufacturing method of the red light flip chip is simple in process and low in cost, and the manufactured red light flip chip has the advantage of high yield, so that the possibility is provided for full-color display of the RGB flip chip.
Specifically, the curing includes heating or ultraviolet irradiation.
Preferably, the light emitting epitaxial layer comprises a blue light emitting epitaxial layer.
Preferably, the film substrate comprises an organic film.
The following describes in detail the manufacturing method of the red light flip chip provided by the present invention with reference to fig. 5 to 8. Specifically, a light emitting epitaxial layer 120 (specifically, a GaN blue light epitaxial layer may be formed on the sapphire substrate 110, wherein the GaN blue light epitaxial layer is U-GaN, N-GaN, a quantum well light emitting layer, and P-GaN in order from bottom to top). Preferably, the sapphire substrate 110 may be a flat sapphire substrate or a Patterned Sapphire Substrate (PSS).
Preferably, the light emitting epitaxial layer 120 may be a GaN blue light epitaxial layer, or may be another GaN epitaxial layer (such as green light, violet light, ultraviolet light), but a blue light epitaxial layer is generally selected because of the highest light emitting efficiency of GaN blue light.
(2) On the epitaxial layer, an LED flip-chip structure is fabricated, i.e., the electrode 140 is formed. Specifically, DBR reflective layers 130 are deposited on the front and side of the chip. Typically the DBR reflective layer structure is made of SiO 2 And TiO 2 The multi-layer structure is formed by stacking multiple layers, and the thickness is 1-5 microns. Through reasonable design, the reflectivity of the DBR to blue light reaches over 98 percent, and the blue light can be prevented from leaking from the electrode surface.
(3) After the manufactured blue LED flip chip is cut and spread, the blue LED flip chip is transferred to the substrate 160 through the film pouring, and the electrodes 140 face upwards toward the sapphire substrate 110 and are arranged in order. In general, substrate 160 is required to be resistant to high temperatures and to be expandable, typically a white film resistant to high temperatures.
(4) The colloid 150 containing red fluorescent powder is uniformly coated on the surface of the chip by a coating or spraying mode. The colloid 150 of the red phosphor contains red phosphor or red quantum dot material, and can absorb blue light to emit red light.
(5) The colloid 150 of the red phosphor is heated or ultraviolet irradiated to be cured, and the chips are divided by dicing. Five sides of each chip are wrapped with red fluorescent powder colloid 150, and the single chip is the red flip chip. When in use, the chip electrode is fixed on the substrate, and the blue light emitted by the chip is converted into red light through the red fluorescent powder when the chip electrode is lightened. The wavelength of the red light is determined by the phosphor.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (5)
1. A red light flip chip, the red light flip chip comprising: the light-emitting device comprises a sapphire substrate, wherein a light-emitting epitaxial layer is arranged on the lower surface of the sapphire substrate, a reflecting layer is arranged on the lower surface and the side face of the light-emitting epitaxial layer, electrodes are arranged on the lower surface of the reflecting layer, red fluorescent powder colloid is coated on the upper surface of the sapphire substrate, the side face of the sapphire substrate and the side face of the reflecting layer, and the red fluorescent powder colloid can convert the light color emitted by the light-emitting epitaxial layer into red color and emit the red color;
the light-emitting epitaxial layer comprises U-GaN, N-GaN, a quantum well light-emitting layer and P-GaN which are sequentially arranged from top to bottom;
the light-emitting epitaxial layer comprises a blue light-emitting epitaxial layer;
the sapphire substrate comprises a flat sapphire substrate or a patterned sapphire substrate;
the reflective layer comprises a DBR reflective layer comprising SiO 2 And TiO 2 ；
The red fluorescent powder colloid comprises a transparent colloid body and red fluorescent powder or red quantum dot materials arranged in the transparent colloid body.
2. A method for manufacturing a red light flip chip, for manufacturing the red light flip chip according to claim 1, comprising:
providing a sapphire substrate;
forming a light-emitting epitaxial layer on the sapphire substrate;
depositing a reflective layer on the upper surface and sides of the light emitting epitaxial layer;
manufacturing an electrode on the upper surface of the reflecting layer;
transferring the structure after manufacturing the electrode onto a film substrate, wherein the electrode is positioned below and is in contact with the film substrate, and the sapphire substrate is positioned above;
coating red fluorescent powder colloid on the upper surface of the sapphire substrate, the side wall of the sapphire substrate and the side surface of the reflecting layer;
and curing and cutting to obtain single red flip chips.
3. The method of manufacturing a red light flip chip of claim 2, wherein the curing comprises heating or ultraviolet irradiation.
4. The method of manufacturing a red light flip chip of claim 2, wherein the light emitting epitaxial layer comprises a blue light emitting epitaxial layer.
5. The method of manufacturing a red light flip chip of claim 2, wherein the film substrate comprises an organic film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811406143.7A CN109285939B (en) | 2018-11-23 | 2018-11-23 | Red light flip chip and manufacturing method thereof |
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| CN201811406143.7A CN109285939B (en) | 2018-11-23 | 2018-11-23 | Red light flip chip and manufacturing method thereof |
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| CN109285939A CN109285939A (en) | 2019-01-29 |
| CN109285939B true CN109285939B (en) | 2023-10-20 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110518033A (en) * | 2019-09-29 | 2019-11-29 | 深圳市晶台股份有限公司 | A kind of integrated full-color light-emitting chip structure |
| CN113764463A (en) * | 2020-06-06 | 2021-12-07 | 张葳葳 | Active driving device and manufacturing method thereof |
| CN112786747A (en) * | 2021-02-05 | 2021-05-11 | 东莞市中晶半导体科技有限公司 | InGaN-based red light LED chip structure |
| CN116845147A (en) * | 2021-08-13 | 2023-10-03 | 福建兆元光电有限公司 | Manufacturing method of red light LED based on GaN-based epitaxy |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145594A (en) * | 2006-09-12 | 2008-03-19 | 丰田合成株式会社 | Light emitting device and method of making the same |
| CN208986022U (en) * | 2018-11-23 | 2019-06-14 | 江苏新广联科技股份有限公司 | A kind of feux rouges flip-chip |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145594A (en) * | 2006-09-12 | 2008-03-19 | 丰田合成株式会社 | Light emitting device and method of making the same |
| CN208986022U (en) * | 2018-11-23 | 2019-06-14 | 江苏新广联科技股份有限公司 | A kind of feux rouges flip-chip |
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