CN220510015U - Heat radiation structure of high-power device crystal - Google Patents

Heat radiation structure of high-power device crystal Download PDF

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Publication number
CN220510015U
CN220510015U CN202322152912.8U CN202322152912U CN220510015U CN 220510015 U CN220510015 U CN 220510015U CN 202322152912 U CN202322152912 U CN 202322152912U CN 220510015 U CN220510015 U CN 220510015U
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China
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power device
fixedly connected
device main
main body
connecting plate
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CN202322152912.8U
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廖弘昌
钱进
刘振东
田亚南
陈晓林
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Riyuexin Semiconductor Weihai Co ltd
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Riyuexin Semiconductor Weihai Co ltd
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Abstract

The utility model discloses a heat radiation structure of a high-power device crystal, which comprises a power device main body, wherein pins which are arranged at equal intervals are fixedly connected to the bottom surface of the power device main body, a silicone grease layer is arranged on the right side surface of the power device main body, a connecting block is fixedly connected to the upper surface of the power device main body, a connecting hole I is formed in the connecting block, and a bolt I is arranged in the connecting hole I.

Description

Heat radiation structure of high-power device crystal
Technical Field
The utility model relates to the technical field of heat dissipation structures of high-power device crystals, in particular to a heat dissipation structure of a high-power device crystal.
Background
A high-power transistor is a transistor that operates under high-voltage and high-current conditions. Commonly referred to as power devices, belong to the field of power electronics (power electronics technology) research. The essence of the method is to effectively control the reasonable work of the power electronic device, and provide high-power output for the load through the power electronic device, generally, the power device generally works under the conditions of high voltage and high current and generally has the characteristics of high withstand voltage, high working current, high self-dissipation power and the like, so that the power device has a certain difference with a general small power device when in use. High power transistors may be used to control high currents. Its working principle is to control the flow direction of current by changing the electric field of the internal crystal. The high-precision control device has the characteristics of high precision control, high reliability and high temperature resistance, and is therefore commonly used in the power electronic technology.
Because the high-power device is easy to generate high temperature during working, the existing high-power device is usually directly welded on the circuit board, the high-power device can only dissipate heat by means of the heat dissipation equipment on the circuit board or the power distribution cabinet, the heat dissipation effect is relatively poor, normal working is difficult to perform when the temperature of the high-power device is too high, the circuit board can be ignited during severe conditions, the circuit board is damaged, and the maintenance cost is greatly increased.
There is therefore a need to propose a new solution to this problem.
Disclosure of Invention
The utility model aims to provide a heat radiation structure of a high-power device crystal, which has the characteristic of increasing the heat radiation effect.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a heat radiation structure of high power device crystal, includes the power device main part, the pin that the bottom surface fixedly connected with equidistance was arranged of power device main part, the right flank of power device main part is provided with the silicone grease layer, the last fixedly connected with connecting block of power device main part, connecting hole one has been seted up to the inside of connecting block, connecting hole one's inside is equipped with bolt one, the right flank of power device main part is equipped with the connecting plate, threaded hole one has been seted up to the inside of connecting plate, the inner wall and the bolt threaded connection of threaded hole one, the left surface and the silicone grease layer department of meeting of connecting plate, the right flank fixedly connected with fin of connecting plate.
In order to facilitate the discharge of hot air in the circulation box, the heat radiation structure of the high-power device crystal is preferable, the right side surface of the connecting plate is fixedly connected with the circulation box, and the right side surface of the circulation box is fixedly connected with the air outlet pipe.
In order to facilitate the automatic starting of auxiliary heat dissipation accessories when the power device is at high temperature, the heat dissipation structure of the high-power device crystal is preferably adopted, an inductor and equidistant circulating air openings are arranged in the circulating box body, and the outer surface of the inductor is fixedly connected with the corresponding circulating air openings.
In order to increase the heat dissipation effect of the structure, the heat dissipation structure of the high-power device crystal is preferable, wherein the inner wall of the circulation box body is fixedly connected with a bracket, and the left side surface of the bracket is fixedly provided with a fan.
In order to facilitate establishment of a gap between the connecting plate and the circuit board, the heat dissipation structure of the high-power device crystal is preferably provided with threaded holes II which are arranged at equal intervals in the connecting plate, and the inner wall of each threaded hole II is in threaded connection with a supporting column.
In order to facilitate connection of the power device and the circuit board, the heat dissipation structure of the high-power device crystal is preferable, the circuit board is arranged on the left side face of the power device main body, fixing holes, three welding holes and four connecting holes II are formed in the circuit board, and each pin is fixedly connected with the circuit board through the corresponding welding hole.
In order to facilitate the installation and fixation of the circuit board, the heat dissipation structure of the high-power device crystal is preferably characterized in that the left end of each support column is in threaded connection with a second bolt, and the outer surface of each second bolt is spliced with a corresponding two-phase connecting hole.
Compared with the prior art, the utility model has the following beneficial effects:
1. when the device is used, the power device main body is fixed on the connecting plate through the connecting block and the first bolt, when the power device main body heats, the heat of the power device main body can be dispersed on the connecting plate through the silicone grease layer, and the high temperature dispersed on the connecting plate can be transferred to the radiating fin for radiating, so that the device can radiate the power device main body according to requirements.
2. When the device is used, when the temperature of the radiating fins is sensed by the sensor to reach a certain height, the sensor can send a signal to control the fan to start, when the fan is started, external air is sucked into the circulating box through the opened circulating air port to radiate the radiating fins, then hot air in the circulating box is discharged through the air outlet pipe, and the air in the circulating box is controlled to circulate, so that the aim of increasing the radiating effect of the radiating fins according to requirements is fulfilled.
Drawings
FIG. 1 is a front view of the overall structure of the present utility model;
FIG. 2 is a cross-sectional view of the entire structure of the present utility model;
FIG. 3 is a schematic diagram of a power device according to the present utility model;
FIG. 4 is a schematic diagram of an exploded construction of the present utility model;
in the figure: 1. a power device body; 2. pins; 3. a connecting block; 4. a first connecting hole; 5. a connecting plate; 6. a first threaded hole; 7. a threaded hole II; 8. a heat sink; 9. a circulation box; 10. an air outlet pipe; 11. a circulating air port; 12. a bracket; 13. a fan; 14. a circuit board; 15. a fixing hole; 16. welding holes; 17. a second connecting hole; 18. a silicone grease layer; 19. a support column; 20. a first bolt; 21. a second bolt; 22. an inductor.
Detailed Description
Referring to fig. 1 to 4, a heat dissipation structure of a high-power device crystal includes a power device main body 1, pins 2 are fixedly connected to the bottom surface of the power device main body 1 and are equidistantly arranged, a silicone grease layer 18 is disposed on the right side surface of the power device main body 1, a connecting block 3 is fixedly connected to the upper surface of the power device main body 1, a connecting hole I4 is formed in the connecting block 3, a bolt I20 is disposed in the connecting hole I4, a connecting plate 5 is disposed on the right side surface of the power device main body 1, a threaded hole I6 is formed in the connecting plate 5, the inner wall of the threaded hole I6 is in threaded connection with the bolt I20, a left side surface of the connecting plate 5 is connected with the silicone grease layer 18, and a heat dissipation fin 8 is fixedly connected to the right side surface of the connecting plate 5.
In this embodiment: the power device main body 1 is fixed on the connecting plate 5 through the connecting block 3 and the first bolt 20, when the power device main body 1 heats, the heat of the power device main body 1 can be dispersed on the connecting plate 5 through the silicone grease layer 18, the high temperature dispersed on the connecting plate 5 can be transmitted to the radiating fin 8 for radiating, and the effect that the device can radiate the power device main body 1 according to requirements is achieved.
As a technical optimization scheme of the utility model, the right side surface of the connecting plate 5 is fixedly connected with a circulating box body 9, and the right side surface of the circulating box body 9 is fixedly connected with an air outlet pipe 10.
In this embodiment: the circulating box 9 arranged can be convenient for fixing the air outlet pipe 10, and the air in the circulating box 9 can be conveniently discharged through the air outlet pipe 10 arranged.
As a technical optimization scheme of the utility model, the inside of the circulation box body 9 is provided with the inductors 22 and the circulation air openings 11 which are arranged at equal intervals, and the outer surfaces of the inductors 22 are fixedly connected with the corresponding circulation air openings 11.
In this embodiment: the temperature of the radiating fins 8 can be measured conveniently through the arranged sensor 22, and when the temperature of the radiating fins 8 reaches a certain height, a signal is sent to control the fan 13 to start, and the fan 13 can absorb external air conveniently through the arranged circulating air port 11.
As a technical optimization scheme of the utility model, the inner wall of the circulation box body 9 is fixedly connected with a bracket 12, and the left side surface of the bracket 12 is fixedly provided with a fan 13.
In this embodiment: the fan 13 can be conveniently installed through the arranged bracket 12, and the air outside the circulation box 9 can be absorbed through the circulation air port 11 through the arranged fan 13 to dissipate heat of the radiating fins 8.
As a technical optimization scheme of the utility model, threaded holes II 7 which are arranged in equal distance are formed in the connecting plate 5, and the inner wall of each threaded hole II 7 is in threaded connection with a supporting column 19.
In this embodiment: the second threaded hole 7 is convenient to fix with the support column 19, and the support column 19 can increase the interval between the circuit board 14 and the connecting plate 5.
As a technical optimization scheme of the utility model, a circuit board 14 is arranged on the left side surface of a power device main body 1, a fixing hole 15, three welding holes 16 and four connecting holes 17 are formed in the circuit board 14, and each pin 2 is fixedly connected with the circuit board 14 through the corresponding welding hole 16.
In this embodiment: the circuit board 14 can be conveniently connected with the pin 2 of the power device main body 1 through the arranged welding holes 16, and the first bolt 20 can be controlled to be connected with the first threaded hole 6 through the arranged fixing holes 15.
As a technical optimization scheme of the utility model, the left end of each support column 19 is connected with a second bolt 21 in a threaded manner, and the outer surface of each second bolt 21 is spliced with a corresponding second connecting hole 17.
In this embodiment: the purpose of connecting the circuit board 14 and the connecting plate 5 is achieved by penetrating the second bolt 21 into the corresponding second connecting hole 17 and enabling the second bolt 21 to be in threaded connection with the supporting column 19.
Working principle: when the power device main body 1 works and heats, heat can be dispersed on the connecting plate 5 through the silicone grease layer 18, the heat after being dispersed through the connecting plate 5 can be transferred to the radiating fins 8 for radiating, when the sensor 22 senses that the temperature of the radiating fins 8 reaches a certain height, the sensor 22 can send a signal to control the start of the fan 13, when the fan 13 is started, air outside the circulating box 9 can be sucked into the circulating box 9 through the circulating air port 11, the air sucked into the circulating box 9 can radiate the radiating fins 8, and the air after radiating is discharged out of the circulating box 9 through the fan 13 and the air outlet pipe 10.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the utility model.

Claims (7)

1. The utility model provides a heat radiation structure of high power device crystal, includes power device main part (1), its characterized in that: the power device comprises a power device main body (1), wherein pins (2) are fixedly connected to the bottom surface of the power device main body (1) at equal intervals, a silicone grease layer (18) is arranged on the right side surface of the power device main body (1), a connecting block (3) is fixedly connected to the upper surface of the power device main body (1), a first connecting hole (4) is formed in the connecting block (3), a first bolt (20) is arranged in the first connecting hole (4), a connecting plate (5) is arranged on the right side surface of the power device main body (1), a first threaded hole (6) is formed in the connecting plate (5), the inner wall of the first threaded hole (6) is in threaded connection with the first bolt (20), and a left side surface of the connecting plate (5) is connected with the silicone grease layer (18), and a radiating fin (8) is fixedly connected to the right side surface of the connecting plate (5).
2. The heat dissipation structure of a high power device crystal of claim 1, wherein: the right side of connecting plate (5) fixedly connected with circulation box (9), the right side of circulation box (9) fixedly connected with goes out tuber pipe (10).
3. The heat dissipation structure of a high power device crystal of claim 2, wherein: the circulating box is characterized in that an inductor (22) and circulating air openings (11) which are arranged at equal intervals are arranged in the circulating box body (9), and the outer surface of the inductor (22) is fixedly connected with the corresponding circulating air opening (11).
4. The heat dissipation structure of a high power device crystal of claim 2, wherein: the inner wall of the circulation box body (9) is fixedly connected with a support (12), and a fan (13) is fixedly arranged on the left side face of the support (12).
5. The heat dissipation structure of a high power device crystal of claim 1, wherein: threaded holes II (7) which are arranged at equal intervals are formed in the connecting plate (5), and support columns (19) are connected with the inner wall of each threaded hole II (7) in a threaded mode.
6. The heat dissipation structure of a high power device crystal of claim 5, wherein: the power device is characterized in that a circuit board (14) is arranged on the left side face of the power device main body (1), fixing holes (15), three welding holes (16) and four connecting holes II (17) are formed in the circuit board (14), and the outer surface of each pin (2) is fixedly connected with the circuit board (14) through the corresponding welding hole (16).
7. The heat dissipation structure of a high power device crystal of claim 6, wherein: the left end of each support column (19) is connected with a second bolt (21) in a threaded mode, and the outer surface of each second bolt (21) is connected with a second corresponding connecting hole (17) in an inserting mode.
CN202322152912.8U 2023-08-11 2023-08-11 Heat radiation structure of high-power device crystal Active CN220510015U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202322152912.8U CN220510015U (en) 2023-08-11 2023-08-11 Heat radiation structure of high-power device crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202322152912.8U CN220510015U (en) 2023-08-11 2023-08-11 Heat radiation structure of high-power device crystal

Publications (1)

Publication Number Publication Date
CN220510015U true CN220510015U (en) 2024-02-20

Family

ID=89866345

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202322152912.8U Active CN220510015U (en) 2023-08-11 2023-08-11 Heat radiation structure of high-power device crystal

Country Status (1)

Country Link
CN (1) CN220510015U (en)

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