CN220433079U - MPCVD cultivates diamond growth equipment - Google Patents
MPCVD cultivates diamond growth equipment Download PDFInfo
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- CN220433079U CN220433079U CN202322206251.2U CN202322206251U CN220433079U CN 220433079 U CN220433079 U CN 220433079U CN 202322206251 U CN202322206251 U CN 202322206251U CN 220433079 U CN220433079 U CN 220433079U
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- 239000010432 diamond Substances 0.000 title claims abstract description 57
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 55
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 27
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 17
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 230000009931 harmful effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of diamond cultivation and discloses MPCVD diamond cultivation growth equipment, which comprises a base, wherein an cultivation component is arranged at the top of the base, a feeding component is arranged at the top of the base, the cultivation component comprises two fixing seats fixedly connected to the top of the base, an organism is fixedly connected between the tops of the two fixing seats, a fixing block is fixedly connected to the inner bottom wall of the organism, a mounting groove is formed in the top of the fixing block, a heating plate is fixedly connected to the inside of the mounting groove, a diamond substrate is fixedly connected to the top of the fixing block, a filter screen is fixedly connected to the inner right side wall of the organism, a mounting block is fixedly connected to the top of the base, and a sealing door is hinged to the front face of the organism through a hinge. The MPCVD cultivation diamond growth device can provide a large amount of high-concentration carbon source gas by taking hair as a raw material, can effectively filter the carbon source gas, and improves the practicability of the MPCVD cultivation diamond growth device.
Description
Technical Field
The utility model relates to the technical field of diamond cultivation, in particular to MPCVD diamond cultivation growth equipment.
Background
Diamond is a polished diamond, integrates high refractive index, high hardness and high dispersion value, is beautiful and rare, and with the development of current technology, diamond can also be cultivated by utilizing technology, and the cultivated diamond is a synthetic diamond cultivated by simulating the natural forming environment of natural diamond in a laboratory, and is mainly synthesized by an HTHP (high temperature and high pressure) method and a CVD (chemical vapor deposition) method, also called a growing diamond, wherein the CVD method using an MPCVD device is the most widely used method for preparing single crystal diamond at home and abroad at present.
The prior MPCVD diamond cultivating and growing equipment has the defects that in the diamond synthesizing process, the carbon source is generally methane gas, the price of the methane gas is generally expensive, and the carbon source content in the methane gas is less, so the carbon atom precipitation time is longer, the diamond cultivating and growing rate is lower, the production cost is higher, the efficiency is not high, and the practicability of the prior MPCVD diamond cultivating and growing equipment is reduced.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the utility model provides MPCVD diamond cultivating growth equipment, which has the advantages of effectively utilizing cheap carbon sources to cultivate diamond with high efficiency and the like, and solves the problem of lower practicability of the existing MPCVD diamond cultivating growth equipment.
(II) technical scheme
In order to achieve the aim of effectively utilizing cheap carbon sources to cultivate diamonds with high efficiency, the utility model provides the following technical scheme: an MPCVD cultivates diamond growth equipment, includes the base, cultivation subassembly is installed to the top of base, the feed subassembly is installed at the top of base;
the cultivation component comprises two fixing seats fixedly connected to the top of a base, a machine body is fixedly connected between the tops of the two fixing seats, a fixing block is fixedly connected to the inner bottom wall of the machine body, a mounting groove is formed in the top of the fixing block, a heating plate is fixedly connected to the inside of the mounting groove, a diamond substrate is fixedly connected to the top of the fixing block, a filter screen is fixedly connected to the inner right side wall of the machine body, a mounting block is fixedly connected to the top of the base, a sealing door is hinged to the front face of the machine body through a hinge, an observation window is fixedly connected to the front face of the sealing door, and a top plate is fixedly connected to the top of the machine body;
the feeding assembly comprises a plasma etching machine fixedly connected to the top of the mounting block, a fan is fixedly connected to the top of the plasma etching machine, a gas inlet end of the fan is fixedly connected with a gas pipe, and a gas outlet pipe is fixedly connected to a gas outlet end of the fan.
Further, the length and width of the diamond substrate are equal to the length and width of the mounting groove, respectively.
Further, the length and the width of the top plate are respectively equal to the length and the width of the machine body, and the left side of the mounting block is fixedly connected with the right side of the machine body.
Further, the width and the height of the filter screen are both larger than the outer diameter of the air outlet pipe, and the front surface of the sealing door is fixedly connected with a handle.
Further, the left end of the air outlet pipe penetrates through the machine body and extends to the inside of the machine body to be fixedly connected with the right side of the filter screen.
Further, the length of the base is larger than the sum of the length of the machine body and the length of the mounting block, and the gas transmission pipe is fixedly connected with the gas outlet end of the plasma etching machine.
Further, the length and the width of the plasma etcher are respectively smaller than the length and the width of the mounting block.
(III) beneficial effects
Compared with the prior art, the utility model provides MPCVD diamond growing equipment, which has the following beneficial effects:
this MPCVD cultivates diamond growth equipment, through the mutual cooperation of cultivation subassembly and the feed subassembly of base top installation, can use hair as the raw materials, etch hair to provide a large amount of high-concentration carbon source gas, reduced deposition time, improved the efficiency of cultivating diamond, reduced manufacturing cost, simultaneously, can also effectively filter carbon source gas, avoid causing the harmful effects to diamond's growth at the impurity that the hair gasification in-process produced, thereby ensure diamond's purity, improved the practicality that MPCVD cultivated diamond growth equipment.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a front view of the structure of the present utility model;
fig. 3 is an enlarged partial schematic view of the portion a of the structure of the present utility model.
In the figure: 1 base, 200 cultivation components, 201 fixing seats, 202 machine bodies, 203 fixing blocks, 204 mounting grooves, 205 heating plates, 206 diamond substrates, 207 filter screens, 208 mounting blocks, 209 sealing doors, 210 observation windows, 211 top plates, 300 feeding components, 301 plasma etchers, 302 fans, 303 gas transmission pipes and 304 gas outlet pipes.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-3, the present utility model provides a technical solution: the utility model provides a diamond growth equipment is cultivated to MPCVD, including base 1, cultivation subassembly 200 is installed at the top of base 1, and feed subassembly 300 is installed at the top of base 1, through the mutual cooperation of cultivation subassembly 200 and feed subassembly 300 of base 1 top installation, can use the hair as the raw materials, etch the hair, thereby provide a large amount of high-concentration carbon source gas, reduced the settling time, improved the efficiency of cultivating the diamond, reduced manufacturing cost, simultaneously, can also effectively filter carbon source gas, avoid causing harmful effects to diamond growth at the impurity that the hair gasification in-process produced, thereby ensure the purity of diamond, improved the practicality of diamond growth equipment is cultivated to MPCVD.
The incubator 200 in this embodiment is a structure for incubating diamonds.
As shown in fig. 1, 2 and 3, the cultivation component 200 includes two fixing bases 201 fixedly connected to the top of the base 1, a body 202 is fixedly connected between the tops of the two fixing bases 201, a fixing block 203 is fixedly connected to the inner bottom wall of the body 202, a mounting groove 204 is formed in the top of the fixing block 203, a heating plate 205 is fixedly connected to the inside of the mounting groove 204, a diamond substrate 206 is fixedly connected to the top of the fixing block 203, a filter screen 207 is fixedly connected to the inner right side wall of the body 202, a mounting block 208 is fixedly connected to the top of the base 1, a sealing door 209 is hinged to the front face of the body 202 through a hinge, an observation window 210 is fixedly connected to the front face of the sealing door 209, and a top plate 211 is fixedly connected to the top of the body 202.
The length and width of the diamond substrate 206 are equal to the length and width of the mounting groove 204, respectively, so that the heating plate 205 can fully heat the diamond substrate 206.
In addition, the length and width of the top plate 211 are equal to the length and width of the machine body 202, respectively, so that the top plate 211 can protect the machine body 202, and the left side of the mounting block 208 is fixedly connected with the right side of the machine body 202, so that the machine body 202 is more stable.
In addition, the front fixedly connected with handle of sealing door 209 makes things convenient for sealing door 209's switch, and the length of base 1 is greater than the length sum of organism 202 and installation piece 208, ensures that base 1 can play the supporting effect to organism 202 and installation piece 208.
The feed assembly 300 in this embodiment is configured to provide a carbon source gas for diamond cultivation.
As shown in fig. 1, 2 and 3, the feeding assembly 300 includes a plasma etching machine 301 fixedly connected to the top of the mounting block 208, a blower 302 is fixedly connected to the top of the plasma etching machine 301, a gas inlet end of the blower 302 is fixedly connected to a gas pipe 303, and a gas outlet end of the blower 302 is fixedly connected to a gas outlet pipe 304.
It should be noted that, the width and the height of the filter 207 are both greater than the outer diameter of the air outlet pipe 304, and the left end of the air outlet pipe 304 penetrates the body 202 and extends to the inside of the body 202 to be fixedly connected with the right side of the filter 207, so that the filter 207 can completely filter the air conveyed by the air outlet pipe 304.
In addition, the gas pipe 303 is fixedly connected with the gas outlet end of the plasma etching machine 301, so that carbon source gas generated by the plasma etching machine 301 can be conveyed to the fan 302, and the length and the width of the plasma etching machine 301 are respectively smaller than those of the mounting block 208, so that the plasma etching machine 301 is mounted more stably.
The working principle of the embodiment is as follows:
when the device is used, firstly, the hair serving as a raw material is cleaned, then the hair is placed in a plasma etching machine 301, then a fan 302 is turned on, carbon source gas generated by etching hair bundles is conveyed into a machine body 202 through a gas conveying pipe 303 and a gas outlet pipe 304, meanwhile, the carbon source gas is filtered through a filter screen 207, the temperature of a diamond substrate 206 can be controlled through a heating plate 205 according to requirements, and then free carbon atoms in the carbon source gas are attracted by nearby carbon atom structures, so that the free carbon atoms are gradually attached to the diamond substrate 206 and combined with carbon atoms of the diamond substrate 206 to form new chemical bonds, and diamond grows gradually.
Compared with the prior art, this MPCVD cultivates diamond growth equipment, through the mutual cooperation of cultivation subassembly 200 and the feed subassembly 300 of base 1 top installation, can use the hair as the raw materials, etch the hair, thereby provide a large amount of high concentration carbon source gas, reduce deposition time, improved the efficiency of cultivating the diamond, reduced manufacturing cost, simultaneously, can also effectively filter carbon source gas, avoid causing the harmful effects to diamond's growth at the impurity that produces in the hair gasification process, thereby ensure diamond's purity, the practicality of MPCVD cultivates diamond growth equipment has been improved, the problem that current MPCVD cultivates diamond growth equipment practicality is lower has been solved.
The electrical components appearing herein are all electrically connected with the master controller and the power supply, the master controller can be a conventional known device for controlling a computer and the like, and the prior art of power connection is not described in detail herein.
It should be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made hereto without departing from the spirit and principles of the present utility model.
Claims (7)
1. An MPCVD growth device comprising a setting (1), characterized in that: an cultivation component (200) is arranged at the top of the base (1), and a feeding component (300) is arranged at the top of the base (1);
the cultivation component (200) comprises two fixing seats (201) fixedly connected to the top of a base (1), a machine body (202) is fixedly connected between the tops of the two fixing seats (201), a fixing block (203) is fixedly connected to the inner bottom wall of the machine body (202), a mounting groove (204) is formed in the top of the fixing block (203), a heating plate (205) is fixedly connected to the inside of the mounting groove (204), a diamond substrate (206) is fixedly connected to the top of the fixing block (203), a filter screen (207) is fixedly connected to the inner right side wall of the machine body (202), a mounting block (208) is fixedly connected to the top of the base (1), a sealing door (209) is hinged to the front face of the machine body (202) through a hinge, an observation window (210) is fixedly connected to the front face of the sealing door (209), and a top plate (211) is fixedly connected to the top of the machine body (202).
The feeding assembly (300) comprises a plasma etching machine (301) fixedly connected to the top of the mounting block (208), a fan (302) is fixedly connected to the top of the plasma etching machine (301), a gas inlet end of the fan (302) is fixedly connected with a gas pipe (303), and a gas outlet end of the fan (302) is fixedly connected with a gas outlet pipe (304).
2. An MPCVD growth apparatus according to claim 1, wherein: the length and width of the diamond substrate (206) are equal to the length and width of the mounting groove (204), respectively.
3. An MPCVD growth apparatus according to claim 1, wherein: the length and the width of the top plate (211) are respectively equal to those of the machine body (202), and the left side of the mounting block (208) is fixedly connected with the right side of the machine body (202).
4. An MPCVD growth apparatus according to claim 1, wherein: the width and the height of the filter screen (207) are both larger than the outer diameter of the air outlet pipe (304), and the front surface of the sealing door (209) is fixedly connected with a handle.
5. An MPCVD growth apparatus according to claim 1, wherein: the left end of the air outlet pipe (304) penetrates through the machine body (202) and extends to the inside of the machine body (202) to be fixedly connected with the right side of the filter screen (207).
6. An MPCVD growth apparatus according to claim 1, wherein: the length of the base (1) is greater than the sum of the length of the machine body (202) and the length of the mounting block (208), and the gas pipe (303) is fixedly connected with the gas outlet end of the plasma etching machine (301).
7. An MPCVD growth apparatus according to claim 1, wherein: the length and width of the plasma etcher (301) are less than the length and width of the mounting block (208), respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322206251.2U CN220433079U (en) | 2023-08-16 | 2023-08-16 | MPCVD cultivates diamond growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322206251.2U CN220433079U (en) | 2023-08-16 | 2023-08-16 | MPCVD cultivates diamond growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220433079U true CN220433079U (en) | 2024-02-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322206251.2U Active CN220433079U (en) | 2023-08-16 | 2023-08-16 | MPCVD cultivates diamond growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220433079U (en) |
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2023
- 2023-08-16 CN CN202322206251.2U patent/CN220433079U/en active Active
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