CN211284535U - Rotatable diamond growth device in microwave plasma chemical vapor deposition - Google Patents
Rotatable diamond growth device in microwave plasma chemical vapor deposition Download PDFInfo
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- CN211284535U CN211284535U CN201922431708.3U CN201922431708U CN211284535U CN 211284535 U CN211284535 U CN 211284535U CN 201922431708 U CN201922431708 U CN 201922431708U CN 211284535 U CN211284535 U CN 211284535U
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Abstract
The utility model discloses a rotatable device of growing diamond in microwave plasma chemical vapor deposition, include: a cavity for providing microwave plasma diamond growth environment is provided with rotatable sample in the cavity and holds in the palm, and rotatable sample holds in the palm and is used for placing the diamond, and rotatable sample holds in the palm and can rotate around the center pin, drives the diamond rotation then. The growth conditions of each point of the diamond are the same in the growth process of the diamond, and the uniform distribution of airflow, temperature and power density on the growth surface of the diamond is realized.
Description
[ technical field ] A method for producing a semiconductor device
The utility model belongs to the technical field of diamond material grows, especially, relate to a rotatable device of growing diamond in microwave plasma chemical vapor deposition.
[ background of the invention ]
It is well known that diamond has excellent thermal, electrical, force, optical, biological stability, etc. properties. More and more people begin to research the performance of diamond, particularly in the field of electricity, the forbidden band width of diamond is 5.5eV, the breakdown voltage is more than 10MV/cm, the electron mobility is 2200cm2/V ∙ s, and the hole mobility is 1600cm2/V ∙ s. Diamond has great potential for use. This requires that the diamond be made epitaxial anyway.
In the last two decades, various methods for extending diamond have been explored, such as hot filament chemical vapor deposition, high temperature, high pressure, microwave plasma chemical vapor deposition. Among these methods, the most widely studied is the microwave plasma chemical vapor deposition method, because of the low impurity content and high quality of the grown diamond. The microwave plasma chemical vapor deposition process was used as the primary process for diamond production using a 2.45GHz microwave source. The diamond growth process generally comprises the following steps: the working pressure is 50-200Torr, the temperature is 800-1500 ℃, and the power is 500-5800W. The reaction gases are mainly methane and hydrogen.
At present, the microwave plasma chemical vapor deposition equipment still has defects. For example, the diamond surface has uneven distribution of air flow, temperature and power density, which causes the diamond growth surface to have a high temperature at some places and a low temperature at some places, and the condition has a great negative effect on the diamond epitaxial growth if the condition lasts for a long time. Because the distribution of air flow, temperature and power density is not uniform, the quality of the diamond growth surface, the distribution of stress and even the cracking of the diamond and other serious problems can be caused.
[ Utility model ] content
The utility model aims at providing a rotatable device of growing diamond among microwave plasma chemical vapor deposition for the diamond is at the growth in-process, and every point growth condition is all the same, has realized air current, temperature, power density evenly distributed at the diamond growth face.
The utility model adopts the following technical scheme: an apparatus for rotatable diamond growth in microwave plasma chemical vapor deposition, comprising: a cavity for providing microwave plasma diamond growth environment is provided with rotatable sample in the cavity and holds in the palm, and rotatable sample holds in the palm and is used for placing the diamond, and rotatable sample holds in the palm and can rotate around the center pin, drives the diamond rotation then.
Further, the rotatable sample holder is a cylinder, the upper surface of the cylinder is horizontal and used for placing the diamond; the rotatable sample support is a cylinder, the upper surface of the cylinder is provided with a groove, the bottom surface of the groove is horizontal, and diamonds are placed in the groove.
Furthermore, the device also comprises a power device which is connected with the rotatable sample support and is used for driving the rotatable sample support to rotate.
Further, the power plant includes: the output end of the transmission device is vertically and coaxially connected with the rotatable sample support, and the stepping motor is arranged outside the cavity and connected with the input end of the transmission device.
The utility model has the advantages that: the diamond rotates in the cavity in the growth process, the growth conditions of each point are the same, the uniform distribution of airflow, temperature and power density on the diamond growth surface is realized, and the problems of uneven quality and stress distribution of the diamond growth surface and even diamond cracking caused by uneven distribution of airflow, temperature and power in the diamond growth process are effectively solved.
[ description of the drawings ]
FIG. 1 is a schematic diagram of one configuration of a device for rotatable diamond growth;
fig. 2 is another structural diagram of the device for rotatably growing diamonds.
Wherein: 1. diamond; 2. the sample holder can be rotated; 3. a cavity; 4. a sample stage; 5. a transmission device; 6. a stepping motor; 7. and (4) a groove.
[ detailed description ] embodiments
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
The embodiment discloses a rotatable device that grows diamond in microwave plasma chemical deposition, including the cavity 3 that is arranged in providing the microwave plasma diamond growth environment, be provided with rotatable sample in the cavity 3 and hold in the palm 2, rotatable sample holds in the palm 2 and is used for placing diamond 1, and rotatable sample holds in the palm 2 and can rotate around the center pin, then drives diamond 1 rotatory. The rotatable sample holder 2 is cylindrical, and the upper surface of the cylinder is horizontal and used for placing the diamond 1; rotatable sample holds in palm 2 and is the cylinder, and the upper surface of cylinder is opened flutedly, and the bottom surface of recess is the level and is used for placing diamond 1, and the degree of depth of recess is not higher than diamond 1's height. The output end of the transmission device 5 is vertically and coaxially connected with the sample table 4, and the stepping motor 6 is arranged outside the cavity 3 and is connected with the input end of the transmission device 5.
The rotatable mode in the present invention is that, as shown in fig. 1, the upper wall surface of the rotatable sample holder 2 is horizontal, and diamond 1 is placed thereon.
In another mode, as shown in fig. 2, a groove 7 is formed in the center of the upper wall surface of the rotatable sample holder 2 and used for accommodating the diamond 1, and the bottom surface of the groove 7 is horizontal.
The rotatable sample holder 2 is made of molybdenum, and the roughness of the wall surface in contact with the diamond 1 is 0.1 mm-1 nm.
A sample table 4 is horizontally arranged in the cavity and is fixed in the cavity 3. The rotatable sample holder 2 is horizontally placed on the sample table 4. The power device comprises: the output end of the transmission device 5 vertically penetrates through the sample table 4 to be connected with the rotatable sample holder 2; and the stepping motor 6 is arranged outside the cavity 3 and is connected with the input end of the transmission device 5. Power is transmitted to the rotatable sample holder 2. The transmission 5 may be selected from existing equipment.
The embodiment discloses a method for growing diamond by using a rotatable diamond growth device in microwave plasma chemical deposition, which comprises the following steps: the diamond 1 is placed on a rotatable sample holder 2 in a closed cavity 3, and the diamond 1 continuously rotates in the cavity 3 for providing a microwave plasma diamond growth environment during the growth process of the diamond 1. The cavity 3 is internally provided with a rotatable sample support 2, the diamond 1 is horizontally placed on the rotatable sample support 2, and the rotatable sample support 2 drives the diamond 1 to rotate. Diamond 1 is horizontal setting, and is 360 degrees rotations around vertical central axis. The rotating speed is 0-600 r/min.
The diamond growth environment in the microwave plasma in the cavity 3 is as follows: the pressure in the cavity, the surface temperature of the diamond, the microwave power, the flow of hydrogen introduced into the cavity and the flow of methane introduced into the cavity are respectively as follows: 50-200torr, 800-1200 ℃, 3000-5000W, 500-1000sccm, 25-100 sccm.
The diamond 1 is arranged on the rotatable sample holder 2; the stepping motor 6 outside the cavity 3 provides power, when the stepping motor 6 is powered, the stepping motor 6 outputs a rotating force, the rotating force is transmitted to the position of the rotatable sample support 2 through the transmission device 5, and the transmission device 5 is welded with the rotatable sample support 2 to drive the rotatable sample support 2 to rotate. The rotating speed of the rotatable sample support 2 can be adjusted by adjusting the rotating speed of the stepping motor 6, so that the rotatable growth of the diamond 1 is realized.
The diamond in the cavity 3 grows in the environment surrounded by the microwave plasma, and at the moment, the pressure in the cavity is 50-200torr, which belongs to the low-pressure growth state. The rotatable sample holder 2 rotates in the cavity and drives the diamond 1 to rotate in the cavity 3, and the diamond 1 grows while rotating, so that the electric field distribution, the gas field distribution and the temperature field distribution around the diamond 1 in the growth process are uniform, the quality of the grown diamond is uniform, and the Raman test, the XRD test and the electrical property are also uniform. The utility model discloses in the diamond production process, cavity 3 irrotational, rotatable sample holds in the palm 2 and drives diamond 1 rotation, and this kind of growing mode is different from cavity 3 and rotatable sample and holds in the palm 2 co-rotating's mode. If the cavity 3 and the rotatable sample holder 2 rotate synchronously together, no effect is produced on the improvement of the growth uniformity of the diamond, because when the cavity and the rotatable sample holder 2 rotate synchronously together, the effect is that the rotatable sample holder 2 does not rotate relative to the cavity 3, and the growth environment of the diamond does not change.
Claims (4)
1. A device capable of rotating to grow diamond in microwave plasma chemical vapor deposition is characterized by comprising a cavity (3) used for providing a microwave plasma diamond growth environment, wherein a rotatable sample support (2) is arranged in the cavity (3), the rotatable sample support (2) is used for placing diamond (1), the rotatable sample support (2) can rotate around a central shaft, and then the diamond (1) is driven to rotate.
2. The device according to claim 1, characterized in that the rotatable sample holder (2) is a cylinder, the upper surface of which is horizontal and is used for placing a diamond (1); rotatable sample holds in palm (2) and is the cylinder, the upper surface of cylinder is opened fluted (7), the bottom surface of recess (7) is the level form, is used for placing diamond (1) in it.
3. The device according to claim 1 or 2, further comprising a power device connected to the rotatable sample holder (2) and adapted to rotate the rotatable sample holder (2).
4. The apparatus of claim 3, wherein the power device comprises: the output end of the transmission device (5) is vertically connected with the rotatable sample support (2) in a coaxial mode, and the stepping motor (6) is arranged outside the cavity (3) and connected with the input end of the transmission device (5).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922431708.3U CN211284535U (en) | 2019-12-30 | 2019-12-30 | Rotatable diamond growth device in microwave plasma chemical vapor deposition |
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| CN201922431708.3U CN211284535U (en) | 2019-12-30 | 2019-12-30 | Rotatable diamond growth device in microwave plasma chemical vapor deposition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110938811A (en) * | 2019-12-30 | 2020-03-31 | 广东达蒙得半导体科技有限公司 | Method for rotatably growing diamond in microwave plasma chemical vapor deposition |
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2019
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110938811A (en) * | 2019-12-30 | 2020-03-31 | 广东达蒙得半导体科技有限公司 | Method for rotatably growing diamond in microwave plasma chemical vapor deposition |
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Effective date of registration: 20201214 Address after: Room 11403, unit 1, building 1, No. 11, Tangyan South Road, hi tech Zone, Xi'an City, Shaanxi Province Patentee after: Xi'an te te Semiconductor Technology Co.,Ltd. Address before: Room 1108, Songhu new town, Guangdong Province Patentee before: Guangdong damonde Semiconductor Technology Co.,Ltd. Patentee before: Wang Hongxing |
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| TR01 | Transfer of patent right |