CN219951194U - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
- Publication number
- CN219951194U CN219951194U CN202320444865.1U CN202320444865U CN219951194U CN 219951194 U CN219951194 U CN 219951194U CN 202320444865 U CN202320444865 U CN 202320444865U CN 219951194 U CN219951194 U CN 219951194U
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- substrate
- grinding disc
- processing apparatus
- substrate processing
- nucleation
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000012545 processing Methods 0.000 title claims abstract description 20
- 230000006911 nucleation Effects 0.000 claims abstract description 40
- 238000010899 nucleation Methods 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims description 37
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 abstract description 44
- 239000010432 diamond Substances 0.000 abstract description 44
- 239000000843 powder Substances 0.000 abstract description 15
- 238000003825 pressing Methods 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a substrate processing apparatus, relates to the processing apparatus of diamond, includes grinding disc, solution groove, rotary driving device and force application device, the grinding disc is used for grinding the substrate nucleation face of substrate, the grinding disc is located in the solution groove just the grinding disc with rotary driving device drive is connected under rotary driving device's drive, the grinding disc rotates around its center, the solution groove is used for splendid attire seed crystal, sets up can be in being close to or keep away from the direction of grinding disc the force application device that moves, force application device is right the substrate will the substrate supports tightly effort on the grinding disc. The substrate nucleation surface of the substrate is ground to form subsurface damage to improve the growth rate of diamond, and diamond micro powder uniformly remains on the substrate nucleation surface as seed crystals, so that the subsequent growth of polycrystalline diamond is facilitated, and the problems of slow nucleation rate, non-uniformity in nucleation and poor nucleation quality are solved.
Description
Technical Field
The present utility model relates to a diamond treatment apparatus, and more particularly to a pretreatment apparatus for growing polycrystalline diamond by CVD.
Background
Chemical Vapor Deposition (CVD) has been rapidly developed over the last two decades, and polycrystalline diamond may be produced by various CVD methods, such as microwave-enhanced CVD, hot filament CVD, and direct current CVD, in which the ratio of the gas components used in the different CVD methods is not too different from the temperature, and the hydrogen is decomposed into active hydrogen atoms at high temperature, and then a small amount of gaseous carbon components is added to react.
Diamond is a cubic crystal system, unlike metals that utilize free electron heat transfer, which relies on phonon heat transfer, which is extremely thermally conductive due to the ultra-strong covalent bonds of diamond itself, up to the debye temperature of 2200K. CVD polycrystalline diamond has therefore been used as a specialized thermal management element since the 90 s of the last century, beginning to enter commercial applications such as microwave and laser diode arrays.
However, the technology for growing polycrystalline diamond by the CVD method has obvious defects when preparing large-size polycrystalline diamond, for example, seed crystals (such as diamond micro powder) are easy to form accumulation on the nucleation surface of the substrate, so that the seed crystals are unevenly distributed, the nucleation rate is different, the growth rate is different, the problems of small deposition area and poor deposition uniformity are easy to occur, and meanwhile, the problems of overlarge total thickness deviation, bending degree and warping degree are possibly caused.
Therefore, in order to solve the above-mentioned drawbacks, it is necessary to pretreat a substrate for growing polycrystalline diamond by the CVD method to increase the growth rate of polycrystalline diamond grown on the nucleation surface of the substrate, and to effectively suppress the problem of uneven nucleation of diamond, thereby increasing the yield of polycrystalline diamond products and further exhibiting the value of polycrystalline diamond grown by the CVD method to a greater extent.
Disclosure of Invention
The utility model aims to provide a substrate processing device, which grinds the nucleation surface of a substrate for growing polycrystalline diamond by a CVD method to form subsurface damage on the surface so as to improve the growth rate of diamond, uniformly leaves diamond micro powder on the nucleation surface of the substrate as seed crystals, facilitates the subsequent growth of polycrystalline diamond, and solves the problems of slow nucleation rate, uneven nucleation and poor nucleation quality in the process of preparing polycrystalline diamond by the CVD method.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the substrate processing device comprises a grinding disc, a solution tank, a rotary driving device and a force application device, wherein the grinding disc is used for grinding the substrate nucleation surface of a substrate, the grinding disc is positioned in the solution tank and is in driving connection with the rotary driving device, the grinding disc rotates around the center of the grinding disc under the driving of the rotary driving device, the solution tank is used for containing crystal liquid, the force application device which can move in the direction approaching to or separating from the grinding disc is arranged, and the force application device applies a force for propping the substrate against the grinding disc to the substrate; the substrate is pressed against the grinding disc through the approaching movement of the pressing plate, and the substrate nucleation surface of the substrate is ground by means of the rotation of the grinding disc, so that on one hand, the grinding can carry out smooth correction on the surface of the substrate, obvious bulges are avoided, the surface roughness is obviously reduced, on the other hand, the grinding can cause subsurface damage to the substrate nucleation surface of the substrate, so that the diamond growth probability is improved, and diamond micro powder uniformly distributed on the grinding disc is transferred to the substrate nucleation surface of the substrate to be used as seed crystals for growing polycrystalline diamond by a later CVD method;
correspondingly, the grinding surface of the grinding disc is upward, so that the substrate is placed on the grinding disc with the substrate nucleation surface downward; the adoption of the substrate nucleation surface of the substrate can effectively avoid the accumulation of diamond micro powder on the substrate nucleation surface of the substrate, and further improve the uniformity of the distribution of the diamond micro powder on the substrate nucleation surface of the substrate;
correspondingly, the surface roughness of the grinding disc ranges from 0.1 μm to 1 μm;
correspondingly, the grinding disc or the rotary driving device is in dynamic sealing connection with the solution tank;
correspondingly, the solution tank is provided with a liquid inlet and a liquid outlet which are respectively used for injecting and discharging the crystal liquid;
correspondingly, a liquid guide channel communicated with the liquid inlet and communicated with the bottom of the solution tank is arranged; the seed crystal liquid is introduced into the solution tank of the flow guide channel through the liquid guide channel, so that the seed crystal liquid can flow into the position of the grinding disc without passing through the force application device or moving out of the force application device, and the structure of the force application device or the operation procedure of the force application device is simplified;
correspondingly, the rotating speed of the rotary driving device is 20-200r/min;
correspondingly, the force application device comprises a moving device and a pressing plate in driving connection with the moving device, and the pressing plate moves in a direction approaching or separating from the grinding disc under the driving of the moving device;
correspondingly, a hole structure is arranged on the pressing plate and is used for circulating the crystal liquid; even if the liquid guide channel is not arranged and the diameter of the pressing plate is equal to the diameter of the solution tank corresponding to the liquid guide channel, the crystal liquid can be directly injected above the pressing plate, and flows into the position of the grinding disc through the hole structure of the pressing plate;
correspondingly, a spacer for contacting the substrate is arranged on the force application device; the force application device applies force to the substrate uniformly through the spacer, so that the problem of growth rate deviation in the later period caused by uneven stress of the substrate is solved;
accordingly, the spacer includes a silica gel spacer.
The beneficial effects of the utility model are as follows:
1) The substrate is pressed against the grinding disc through the approaching movement of the pressing plate, and the substrate nucleation surface of the substrate is ground by means of the rotation of the grinding disc, so that on one hand, the grinding can carry out smooth correction on the surface of the substrate, obvious bulges are avoided, the surface roughness is obviously reduced, on the other hand, the grinding can cause subsurface damage to the substrate nucleation surface of the substrate, so that the diamond growth probability is improved, and diamond micro powder uniformly distributed on the grinding disc is transferred to the substrate nucleation surface of the substrate to be used as seed crystals for growing polycrystalline diamond by a later CVD method;
2) The adoption of the substrate nucleation surface of the substrate can effectively avoid the accumulation of diamond micro powder on the substrate nucleation surface of the substrate, and further improve the uniformity of the distribution of the diamond micro powder on the substrate nucleation surface of the substrate;
3) The spacer which is used for being in contact with the substrate is arranged on the force application device, the force application device applies force to the substrate uniformly through the spacer, and the problem that the diamond growth rate deviation occurs in the later stage due to uneven stress of the substrate is solved;
4) By the treatment device, the crystal liquid can be repeatedly used for a long time after being injected into the solution tank once, and the industrial production efficiency of growing polycrystalline diamond by the CVD method is obviously improved.
Drawings
FIG. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present utility model;
in the figure:
1. a grinding disc; 2. a motor;
3. a solution tank; 31. a liquid inlet; 32. a liquid outlet; 33. a liquid guide channel;
41. a mobile device; 42. a pressing plate;
5. silica gel spacer.
Detailed Description
In the description of the present utility model, it should be understood that terms or positional relationships indicating orientations are based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the utility model and simplifying the description, and do not indicate or imply that the device or element in question must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be construed as limiting the utility model.
The principles and features of the present utility model are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the utility model and are not to be construed as limiting the scope of the utility model. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the utility model.
As shown in fig. 1, in one embodiment of the present utility model, a substrate processing apparatus includes an abrasive disk 1, a solution tank 3, a rotation driving means, a force applying means, and a spacer;
the polishing platen 1 is used for polishing a substrate nucleation surface of a substrate, and therefore, the substrate is placed on the polishing platen 1 with its substrate nucleation surface facing the polishing platen 1, and in this embodiment, the surface roughness of the polishing platen 1 is in the range of 0.1 to 1 μm. By grinding, on one hand, the surface of the substrate can be smoothly modified to avoid obvious bulges, the roughness of the surface is obviously reduced (i.e. the roughness is reduced macroscopically), on the other hand, grinding can cause subsurface damage to the substrate nucleation surface of the substrate (the damage refers to microscopic damage rather than macroscopic damage, the subsurface damage reduces the energy barrier for the growth of crystals, and the crystals can grow out more easily), so as to improve the probability of diamond growth, and diamond micro powder uniformly distributed on the grinding disc 1 is transferred to the substrate nucleation surface of the substrate to be used as a seed crystal for growing polycrystalline diamond by a later CVD method. In this embodiment, for simplifying the description, the grinding surface of the grinding disc 1 is disposed upward, so that the substrate is placed on the grinding disc 1 with the substrate nucleation surface downward, and the deposition of diamond micro powder on the substrate nucleation surface can be effectively avoided by adopting the substrate nucleation surface downward manner, so as to further improve the uniformity of the distribution of diamond micro powder on the substrate nucleation surface. The grinding disc 1 is positioned in the solution tank 3 and the grinding disc 1 is in driving connection with the rotary driving device, in the embodiment, the grinding disc 1 is positioned at the bottom of the solution tank 3, and the supporting rotary rod on the grinding disc 1 is in sealing connection with the bottom of the solution tank 3, so that the leakage of crystal liquid in the solution tank 3 from the joint of the grinding disc 1 and the solution tank 3 is avoided;
the rotary driving device is used for driving the grinding disc 1 to rotate around the center of the grinding disc 1, in the embodiment, the rotary driving device is a motor 2, and the rotating speed of the motor 2 is 20-200r/min;
the solution tank 3 is used for containing a crystal liquid, wherein the crystal liquid is a solution containing diamond micro powder, and the solution comprises water. The solution tank 3 is provided with a liquid inlet 31 and a liquid outlet 32 for injecting and discharging the crystal liquid respectively, the corresponding liquid inlet 31 and liquid outlet 32 are respectively provided with a plug, and a liquid guide channel 33 communicated with the liquid inlet 31 and communicated with the bottom of the solution tank 3 is arranged, so that the crystal liquid can be directly injected into the solution tank 3 from the bottom of the solution tank 3 through the liquid guide channel 33, the crystal liquid does not need to pass through a force application device or move out of the force application device, and the structure of the force application device or the operation procedure of the force application device is simplified. In the embodiment, the solution tank 3 is a plastic tank body, and the diameter is 150-300 mm;
the force application means comprises a moving means 41 and a pressing plate 42 in driving connection with the moving means 41, the pressing plate 42 being moved in a direction approaching or moving away from the grinding disc 1 under the driving of the moving means 41. In this embodiment, the direction is a lifting direction, the moving device 41 is a linear lifting structure such as a linear module and an electric lifter, and the pressing plate 42 that is lifted under the lifting drive of the moving device 41 is arranged on the moving device 41 through fastening connectors such as connecting buckles, in this embodiment, in view of the fact that the flow guiding channels are arranged, the pressing plate 42 is arranged to be of a non-porous structure, in other embodiments, if no flow guiding channel is arranged, the diameter of the pressing plate 42 is equal to the diameter of the solution tank 3 corresponding to the flow guiding channels, and in order to facilitate the inflow of the seed solution, a hole structure can be arranged on the pressing plate 42, and the hole structure is used for the circulation of the seed solution. In the embodiment, the cross section of the pressing surface of the pressing plate 42 is circular, and the diameter of the circular is 50-200 mm;
the spacer for contacting with the substrate is arranged on the pressing plate 42, in this embodiment, the spacer is a silica gel spacer 5, the thickness is 0.5-10 mm, the pressing plate 42 applies force to the substrate uniformly through the spacer, and the problem that the growth rate deviation occurs in the later stage due to uneven stress of the substrate is reduced.
Based on the substrate processing apparatus of the present embodiment, the following processing method can be obtained:
1) Preparing a crystal solution: the diamond micro powder with the grain size of w1-w20 for seed crystal is scattered into a solution tank 3, a certain amount of solution is injected from a liquid inlet 31, for example 300-350ml of solution is injected once or in a plurality of times, a motor 2 is started, and the motor 2 drives a grinding disc 1 to rotate, so that the diamond micro powder in the solution is uniformly dispersed on the grinding disc 1;
2) Placing a substrate: the motor 2 is turned off, the pressing plate 42 is lifted by the moving device 41, a 1-4 inch substrate (typically a silicon wafer or a molybdenum sheet) is placed on the grinding disc 1 with the substrate nucleation surface facing downwards, and the moving device 41 is used to lower the pressing plate 42 until the silica gel spacer 5 is in contact with the substrate;
3) And (3) seed crystal: starting a motor 2, driving a grinding disc 1 to rotate by the motor 2, carrying out seed crystal treatment on the substrate for 5-120min, removing the substrate, drying the substrate by using nitrogen, and then carrying out the growth of polycrystalline diamond by a CVD method.
The foregoing is illustrative of the present utility model and is not to be construed as limiting the scope of the utility model. Any equivalent changes and modifications can be made by those skilled in the art without departing from the spirit and principles of this utility model, and are intended to be within the scope of this utility model.
Claims (11)
1. The utility model provides a substrate processing apparatus, includes grinding disc, solution groove, rotation driving device and force application device, its characterized in that, the grinding disc is used for carrying out the grinding to the substrate nucleation face of substrate, the grinding disc is located in the solution groove just the grinding disc with rotation driving device drive connection under rotation driving device's drive, the grinding disc rotates around its center, the solution groove is used for splendid attire crystal liquid, set up can be in being close to or keep away from the direction of grinding disc the force application device that moves, force application device is right the substrate is supported tightly the effort on the grinding disc with the substrate.
2. The substrate processing apparatus of claim 1, wherein the abrasive side of the abrasive disk is disposed upward such that the substrate is placed on the abrasive disk with the substrate nucleation side downward.
3. The substrate processing apparatus according to claim 1, wherein the surface roughness of the abrasive disk is in the range of 0.1 to 1 μm.
4. The substrate processing apparatus of claim 1, wherein the abrasive disk or the rotary drive is in dynamic sealing connection with the solution tank.
5. The substrate processing apparatus according to claim 1, wherein the solution tank is provided with a liquid inlet and a liquid outlet for injecting and discharging the seed solution, respectively.
6. The substrate processing apparatus according to claim 5, wherein a liquid guide passage is provided in communication with the liquid inlet and communicated with the bottom of the solution tank.
7. The substrate processing apparatus according to claim 1, wherein the rotational speed of the rotational drive means is 20-200r/min.
8. A substrate processing apparatus according to claim 1, wherein said urging means comprises moving means and a platen drivingly connected to said moving means, said platen being moved in a direction approaching or moving away from said polishing platen by the drive of said moving means.
9. The substrate processing apparatus of claim 8, wherein the platen is provided with a hole structure for the passage of a seed liquid.
10. A substrate processing apparatus according to claim 1, wherein a spacer for contact with the substrate is provided on the urging means.
11. The substrate processing apparatus of claim 10, wherein the spacer comprises a silicone spacer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320444865.1U CN219951194U (en) | 2023-03-06 | 2023-03-06 | Substrate processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320444865.1U CN219951194U (en) | 2023-03-06 | 2023-03-06 | Substrate processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219951194U true CN219951194U (en) | 2023-11-03 |
Family
ID=88542237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320444865.1U Active CN219951194U (en) | 2023-03-06 | 2023-03-06 | Substrate processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219951194U (en) |
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2023
- 2023-03-06 CN CN202320444865.1U patent/CN219951194U/en active Active
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