CN220210419U - Grid pulse modulation circuit and device for power amplifier tube - Google Patents
Grid pulse modulation circuit and device for power amplifier tube Download PDFInfo
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- CN220210419U CN220210419U CN202321028372.6U CN202321028372U CN220210419U CN 220210419 U CN220210419 U CN 220210419U CN 202321028372 U CN202321028372 U CN 202321028372U CN 220210419 U CN220210419 U CN 220210419U
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Abstract
The application discloses a power amplifier tube grid pulse modulation circuit and a device, wherein the circuit comprises a pulse voltage conversion circuit and a grid pulse modulation circuit; the external TTL pulse signal is connected to the input end of the first NOT gate through the first resistor, the diode is connected between the output end of the first NOT gate and the input end of the second NOT gate, and the pulse voltage conversion circuit is used for converting the high level of the TTL pulse signal into the low level or converting the low level of the TTL pulse signal into the high level; the grid pulse voltage modulation circuit comprises an operational amplifier, the output end of the second NOT gate is connected with the same-direction input end of the operational amplifier, the reverse input end of the operational amplifier is connected with the output end of the operational amplifier, and the grid pulse signal is used for converting high level and/or low level output by the pulse voltage conversion circuit into grid pulse modulation signals required by the power amplifier tube. The utility model can realize high-speed pulse modulation, has simple circuit structure and fewer used components, and reduces the manufacturing cost.
Description
Technical Field
The application relates to the technical field of microwaves and modulation circuits, in particular to a power amplifier tube grid pulse modulation circuit and a device.
Background
With the improvement of the technical level of solid-state devices, the microwave millimeter wave power amplifier is rapidly developed. Corresponding pulse modulation techniques have also been widely developed, and these pulse modulation techniques are widely used in various microwave radio frequency technology fields.
Pulse modulated power amplifiers have found a number of applications in radar and other many communication systems. In the existing engineering design, the GaN power amplifier tube adopts a leakage control mode to realize pulse modulation, and the pulse modulation mode needs to switch large drain current, and because the drain current is large, the selected switching tube needs to flow large current to realize quick switching on and switching off, the circuit design is relatively complex, the high-speed pulse modulation is not easy to realize, the product miniaturization design is not facilitated, and the manufacturing cost is high.
Disclosure of Invention
Aiming at least one defect or improvement requirement of the prior art, the utility model provides a power amplifier tube grid pulse modulation circuit and a device, which can realize high-speed pulse modulation, have simple circuit structure and fewer used components and parts, and reduce the manufacturing cost.
In order to achieve the above object, according to a first aspect of the present utility model, there is provided a power amplifier tube gate pulse modulation circuit including a pulse voltage conversion circuit and a gate pulse modulation circuit; wherein,
the pulse voltage conversion circuit comprises a first NOT gate, a second NOT gate, a first resistor, a second resistor and a diode, wherein an external TTL pulse signal is connected to the input end of the first NOT gate through the first resistor, the diode is connected between the output end of the first NOT gate and the input end of the second NOT gate, one end of the second resistor is connected to the input end of the second NOT gate, the other end of the second resistor is connected with an external power supply, and the pulse voltage conversion circuit is used for converting the high level of the TTL pulse signal into the low level or converting the low level of the TTL pulse signal into the high level;
the grid pulse voltage modulation circuit comprises an operational amplifier, the output end of the second NOT gate is connected with the same-direction input end of the operational amplifier, the reverse input end of the operational amplifier is connected with the output end of the operational amplifier, and the grid pulse signal is used for converting high level and/or low level output by the pulse voltage conversion circuit into grid pulse modulation signals required by the power amplifier tube.
As a further improvement of the utility model, the gate pulse voltage modulation circuit of the power amplifier tube further comprises a third resistor, a fourth resistor and a first capacitor, wherein one end of the third resistor is connected with the output end of the second NOT gate, one end of the fourth resistor is connected with the homodromous input end of the operational amplifier, the other end of the fourth resistor is connected with an external power supply, one end of the first capacitor is connected with the homodromous input end of the operational amplifier, and the other end of the first capacitor is connected with the external power supply.
As a further improvement of the utility model, the gate pulse modulation circuit of the power amplifier tube is characterized in that a positive power port of the first NOT gate is connected with a +5V power supply, and a negative power port of the first NOT gate is grounded; the positive power port of the second NOT gate is grounded, and the negative power port of the second NOT gate is connected with a power supply of-5V.
As a further improvement of the utility model, the power amplifier tube grid pulse modulation circuit is characterized in that the diode is a zener diode.
As a further improvement of the utility model, the grid pulse modulation circuit of the power amplifier tube is characterized in that the external power supply is-5V.
As a further improvement of the utility model, the grid pulse modulation circuit of the power amplification tube is characterized in that the positive power supply port of the first operational amplifier is grounded, and the negative power supply port of the operational amplifier is connected with a power supply of-5V.
According to a second aspect of the present utility model, there is also provided a power amplifier tube gate pulse modulation apparatus, including the above power amplifier tube gate pulse modulation circuit.
In general, the above technical solutions conceived by the present utility model, compared with the prior art, enable the following beneficial effects to be obtained:
according to the grid pulse modulation circuit provided by the utility model, the TTL pulse signal is converted into the 0V/-5V pulse voltage through the serial arrangement of the two NOT gates and the diode, and then the pulse voltage is converted into the grid pulse modulation signal required by the power amplifier tube through the operational amplifier.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic circuit connection diagram of a gate pulse modulation circuit of a power amplifier tube according to an embodiment of the present application;
fig. 2 is a schematic diagram of a gate pulse modulation waveform according to an embodiment of the present application.
Detailed Description
The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model. In addition, the technical features of the embodiments of the present utility model described below may be combined with each other as long as they do not collide with each other.
The terms first, second, third and the like in the description and in the claims of the application and in the above-described figures, are used for distinguishing between different objects and not necessarily for describing a particular sequential or chronological order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the utility model herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
In one aspect, fig. 1 is a schematic circuit connection diagram of a power amplifier gate pulse modulation circuit provided in the embodiments of the present application, please refer to fig. 1, the gate pulse modulation circuit includes a pulse modulation circuit and a gate pulse modulation circuit, wherein the pulse voltage conversion circuit includes a first not gate U1, a second not gate U2, a first resistor R1, a second resistor R2 and a diode D1, an external TTL pulse signal is connected to an input end of the first not gate U1 through the first resistor R1, i.e. one end of the first resistor R1 is connected to an input end of the first not gate U1, the other end of the first resistor R2 is grounded, one end of the second resistor R2 is connected to an input end of the second not gate U2, the other end of the second resistor R2 is connected to an external power supply, and the pulse voltage conversion circuit is used for converting a high level of the TTL pulse signal into a low level, or converting a low level of the TTL pulse signal into a high level.
In a specific embodiment, the positive power port of the first NOT gate U1 is connected with a +5V power supply, and the negative power port of the first NOT gate U1 is grounded; the positive power port of the second NOT gate U2 is grounded, and the negative power port of the second NOT gate U2 is connected with a power supply of-5V.
In a specific embodiment, the external power source to which the second resistor R2 is connected is-5V.
The pulse voltage conversion circuit outputs a low level when the external TTL pulse signal input from the input end of the first not gate U1 is at a high level, and outputs a high level when the external TTL pulse signal input from the input end of the first not gate U1 is at a low level. In a specific embodiment, when the external TTL pulse signal input at the input end of the first not gate U1 is at a high level +5v, after the pulse signal passes through the first not gate U1, the first not gate U1 outputs a low level 0V, and the diode D1 is not turned on, and the voltage value of the input port of the second not gate U2 is the voltage value of the external power supply connected to the second resistor R2: -5V (low level), the second not gate U2 outputs 0V voltage (high level) after passing through the second not gate U2. When the external TTL pulse signal input from the input end of the first not gate U1 is at a low level of 0V, after the pulse signal passes through the first not gate U1, the first not gate U1 outputs a high level of 5V, at this time, the diode D1 is turned on, and under the effect of the external power source connected to the second resistor R2, the voltage value of the input port of the second not gate U2 is 0V (high level), and after passing through the second not gate U2, the second not gate U2 outputs a-5V voltage (low level).
In a preferred embodiment, diode D1 is a zener diode.
The grid pulse voltage modulation circuit comprises an operational amplifier N1, the output end of a second NOT gate U2 is connected with the same-direction input end of the operational amplifier N1, the reverse input end of the operational amplifier N1 is connected with the output end of the operational amplifier N1, and the grid pulse signal is used for converting high level and/or low level output by the pulse voltage conversion circuit into grid pulse modulation signals required by a power amplification tube.
As a further improvement of the utility model, the gate pulse voltage modulation circuit further comprises a third resistor R3, a fourth resistor R4 and a first capacitor C1, wherein one end of the third resistor R3 is connected with the output end of the second NOT gate U2, one end of the fourth resistor is connected with the same-directional input end of the operational amplifier N1, the other end of the fourth resistor is connected with an external power supply, one end of the first capacitor C1 is connected with the same-directional input end of the operational amplifier N1, and the other end of the first capacitor C1 is connected with the external power supply. In a specific embodiment, the external power source is-5V. The voltage dividing circuit formed by the third resistor R3 and the fourth resistor R4 is used for adjusting the grid voltage amplitude of the GaN tube, and the first capacitor C1 is used for adjusting the pulse rising/falling edge parameters.
Fig. 2 is a schematic diagram of a gate pulse modulation waveform provided in the embodiment of the present application, please refer to fig. 2, in which the 0V/-5V voltage output by the pulse voltage conversion circuit is converted into a control voltage required by the GaN power amplifier gate through the amplifier N1, and is a negative voltage signal, and fig. 2 is a schematic diagram of a comparison of the TTL pulse signal and the ridge pulse modulation signal output after conversion under the same time period.
In a preferred embodiment, the resistance of each of the first resistor R1 and the second resistor R2 is 10kΩ.
Preferably, the first NOT gate U1 and the second NOT gate U2 are selected from SN74AHC1G04 of TI company.
Preferably, diode D1 is selected from BZX384C5V1 available from Vishay.
Preferably, the operational amplifier N1 is an LTC6226 of ADI company.
Preferably, the third resistor R3 has a resistance of 1kΩ, the fourth resistor R4 has a resistance of 910 Ω, and the first capacitor C1 has a capacitance of 22pF.
Pulse modulated power amplifiers have found a number of applications in radar and other many communication systems. When the microwave pulse power amplifier works, the input signal adopts a radio frequency modulation signal, and simultaneously, the power amplifier is directly modulated, namely, the working state and the non-working state of the power tube inside the power amplifier are controlled through an external TTL signal. The combination of radio frequency modulation and power amplifier direct modulation can effectively reduce the emission squelch level of the radar, improve the overall power efficiency of the radar and protect the final-stage high-power microwave device. According to the high-speed pulse modulation circuit, the TTL pulse signals are converted into stable 0V/-5V pulse voltages through the serial connection of the two NOT gates and the diode, the pulse voltages are converted into grid pulse modulation signals required by the power amplification tube through the operational amplifier, the high-speed pulse modulation circuit can realize high-speed pulse modulation, the circuit structure is simple, fewer components are used, the manufacturing cost is reduced, and the output signals are stable.
On the other hand, the application also provides a grid pulse modulation device of the power amplifier tube, which comprises the grid pulse modulation circuit and is used for converting TTL pulse signals into grid pulse modulation signals required by the power amplifier tube.
It should be noted that, for simplicity of description, the foregoing method embodiments are all expressed as a series of action combinations, but it should be understood by those skilled in the art that the present application is not limited by the order of actions described, as some steps may be performed in other order or simultaneously in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily required in the present application.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
In the several embodiments provided in this application, it should be understood that the disclosed apparatus may be implemented in other ways.
The foregoing is merely exemplary embodiments of the present disclosure and is not intended to limit the scope of the present disclosure. That is, equivalent changes and modifications are contemplated by the teachings of this disclosure, which fall within the scope of the present disclosure. Embodiments of the present disclosure will be readily apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a scope and spirit of the disclosure being indicated by the claims.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the utility model and is not intended to limit the utility model, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the utility model are intended to be included within the scope of the utility model.
Claims (7)
1. The grid pulse modulation circuit of the power amplifier tube is characterized by comprising a pulse voltage conversion circuit and a grid pulse voltage modulation circuit; wherein,
the pulse voltage conversion circuit comprises a first NOT gate, a second NOT gate, a first resistor, a second resistor and a diode, wherein an external TTL pulse signal is connected to the input end of the first NOT gate through the first resistor, the diode is connected between the output end of the first NOT gate and the input end of the second NOT gate, one end of the second resistor is connected to the input end of the second NOT gate, the other end of the second resistor is connected with an external power supply, and the pulse voltage conversion circuit is used for converting the high level of the TTL pulse signal into the low level or converting the low level of the TTL pulse signal into the high level;
the grid pulse voltage modulation circuit comprises an operational amplifier, the output end of the second NOT gate is connected with the same-direction input end of the operational amplifier, the reverse input end of the operational amplifier is connected with the output end of the operational amplifier, and the TTL pulse signal is used for converting high level and/or low level output by the pulse voltage conversion circuit into grid pulse modulation signals required by the power amplifier tube.
2. The gate pulse modulation circuit of the power amplifier tube according to claim 1, wherein the gate pulse voltage modulation circuit further comprises a third resistor, a fourth resistor and a first capacitor, one end of the third resistor is connected with the second NOT gate output end, one end of the fourth resistor is connected with the same-direction input end of the operational amplifier, the other end of the fourth resistor is connected with an external power supply, one end of the first capacitor is connected with the same-direction input end of the operational amplifier, and the other end of the first capacitor is connected with the external power supply.
3. The power amplifier tube gate pulse modulation circuit according to claim 1, wherein the positive power supply port of the first NOT gate is connected with a +5V power supply, and the negative power supply port of the first NOT gate is grounded; the positive power port of the second NOT gate is grounded, and the negative power port of the second NOT gate is connected with a power supply of-5V.
4. The power amplifier tube gate pulse modulation circuit of claim 1, wherein the diode is a zener diode.
5. The power amplifier tube gate pulse modulation circuit according to claim 1 or 2, wherein the external power supply is-5V.
6. The power amplifier tube gate pulse modulation circuit according to claim 1, wherein the positive power port of the operational amplifier is grounded, and the negative power port of the operational amplifier is connected to a-5V power supply.
7. A power amplifier tube gate pulse modulation device, characterized by comprising the power amplifier tube gate pulse modulation circuit according to any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321028372.6U CN220210419U (en) | 2023-04-24 | 2023-04-24 | Grid pulse modulation circuit and device for power amplifier tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321028372.6U CN220210419U (en) | 2023-04-24 | 2023-04-24 | Grid pulse modulation circuit and device for power amplifier tube |
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| Publication Number | Publication Date |
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| CN220210419U true CN220210419U (en) | 2023-12-19 |
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| CN202321028372.6U Active CN220210419U (en) | 2023-04-24 | 2023-04-24 | Grid pulse modulation circuit and device for power amplifier tube |
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| CN (1) | CN220210419U (en) |
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- 2023-04-24 CN CN202321028372.6U patent/CN220210419U/en active Active
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