CN220202036U - Silicon wafer deposition furnace - Google Patents
Silicon wafer deposition furnace Download PDFInfo
- Publication number
- CN220202036U CN220202036U CN202320533940.1U CN202320533940U CN220202036U CN 220202036 U CN220202036 U CN 220202036U CN 202320533940 U CN202320533940 U CN 202320533940U CN 220202036 U CN220202036 U CN 220202036U
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- China
- Prior art keywords
- furnace
- insulation plate
- silicon wafer
- pipe
- heat insulation
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 230000008021 deposition Effects 0.000 title claims abstract description 35
- 238000009413 insulation Methods 0.000 claims abstract description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 53
- 239000012495 reaction gas Substances 0.000 claims description 18
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 30
- 230000000694 effects Effects 0.000 abstract description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a silicon wafer deposition furnace, which relates to the technical field of silicon wafer deposition, and comprises a furnace barrel and a furnace tube, wherein one end of the furnace barrel is a furnace mouth, and the other end of the furnace barrel is a furnace tail; the furnace tube comprises a furnace mouth heat insulation plate, a silicon wafer bearing assembly, a gas insulation plate assembly, a furnace tail heat insulation plate, a vacuumizing tube, an oxygen tube and at least one reaction tube; the furnace mouth heat insulation plate is arranged at the furnace mouth, the furnace tail heat insulation plate is arranged at the furnace tail, the silicon wafer bearing assembly is connected with the furnace mouth heat insulation plate, and the gas insulation plate assembly is arranged between the silicon wafer bearing assembly and the furnace tail heat insulation plate; the reaction air pipe is arranged along the length direction of the furnace cylinder and penetrates through the furnace tail heat insulation plate, the vacuumizing pipe is arranged along the length direction of the furnace cylinder and penetrates through the center of the furnace tail heat insulation plate, the oxygen pipe is arranged inside the vacuumizing pipe along the length direction of the furnace cylinder, one end of the oxygen pipe extends out of the vacuumizing pipe, and the other end of the oxygen pipe penetrates through the center of the gas insulation plate assembly. By adopting the utility model, the effect of depositing the oxide film is better, thereby improving the silicon wafer deposition efficiency.
Description
Technical Field
The utility model relates to the technical field of silicon wafer deposition, in particular to a silicon wafer deposition furnace.
Background
In the technical field of silicon wafer deposition, surface deposition is often used in a surface treatment process of a silicon wafer for a solar cell, and the silicon wafer and gas are subjected to chemical reaction by using a chemical vapor deposition method so as to deposit an oxide layer on the surface of the silicon wafer, reduce or eliminate reflected light on the surface of the silicon wafer, increase the light transmission quantity, and further improve the photoelectric conversion efficiency of the silicon wafer. In order to improve the reaction rate of the gas and the silicon wafer, when the oxide layer is deposited on the surface of the silicon wafer by utilizing chemical vapor deposition, the gas passes through an air inlet pipeline positioned in the reaction chamber, the gas positioned in the air inlet pipeline is heated, so that the gas positioned in the air inlet pipeline is heated to a certain range, and then the gas flowing out of the air inlet pipeline and the heated gas are subjected to chemical reaction with the silicon wafer, so that the oxide layer is prepared on the surface of the silicon wafer.
However, when the conventional silicon wafer deposition furnace performs the above silicon wafer deposition work, the following problems mainly exist:
(1) In order to make the vacuumizing effect better, the vacuumizing tube is arranged at the center of the tail of the furnace, and the oxygen pipe is arranged at the edge of the tail of the furnace, so that the oxygen distribution is not uniform enough when oxygen is input.
(2) If the oxygen pipe is arranged at the center of the furnace tail, the vacuumizing pipe cannot be arranged at the center of the furnace tail, and in order to prevent gas from being pumped away by the vacuumizing pipe too quickly, a gas barrier needs to be arranged, and even if the oxygen pipe is arranged at the center of the furnace tail, the gas barrier can block oxygen from moving towards the direction of the furnace mouth.
The problems can cause the thickness of the oxide layer deposited on each part of the surface of the silicon wafer to be different, and the quality of the oxide film deposited on the silicon wafer is poor.
Accordingly, there is a need to provide a silicon wafer deposition furnace to solve the above problems.
Disclosure of Invention
The utility model aims to overcome the defects in the prior art, and provides the silicon wafer deposition furnace, so that the oxygen distribution in the deposition furnace is more uniform, the effect of depositing an oxide film is better, and the silicon wafer deposition efficiency is improved.
In order to solve the technical problems, the utility model provides a silicon wafer deposition furnace which comprises a furnace barrel and a furnace tube arranged in the furnace barrel, wherein one end of the furnace barrel is a furnace mouth, and the other end of the furnace barrel is a furnace tail; the furnace tube comprises a furnace mouth heat insulation plate, a silicon wafer bearing assembly, a gas insulation plate assembly, a furnace tail heat insulation plate, a vacuumizing tube, an oxygen tube and at least one reaction tube; the furnace mouth heat insulation plate is arranged at the furnace mouth, the furnace tail heat insulation plate is arranged at the furnace tail, the silicon wafer bearing assembly is connected with the furnace mouth heat insulation plate, and the gas insulation plate assembly is arranged between the silicon wafer bearing assembly and the furnace tail heat insulation plate; the reaction air pipe is arranged along the length direction of the furnace cylinder and penetrates through the furnace tail heat insulation plate, the vacuumizing pipe is arranged along the length direction of the furnace cylinder and penetrates through the center of the furnace tail heat insulation plate, the oxygen pipe is arranged inside the vacuumizing pipe along the length direction of the furnace cylinder, one end of the oxygen pipe extends out of the vacuumizing pipe, and the other end of the oxygen pipe penetrates through the center of the gas insulation plate assembly.
As an improvement of the scheme, the silicon wafer bearing assembly comprises at least one boat, an upper boat frame and a lower boat frame, wherein the boat is used for placing silicon wafers, the boat is arranged in the upper boat frame, and the upper boat is arranged in the lower boat frame.
As an improvement of the scheme, one end of the lower boat frame is fixedly embedded in the furnace mouth heat insulation plate.
As an improvement of the scheme, the reaction air pipe is arranged along the length direction of the furnace barrel and penetrates through the furnace tail heat insulation plate, and the reaction air pipe extends from two sides of the gas insulation plate assembly to the furnace mouth.
As an improvement of the scheme, the extension length of the reaction gas pipe is larger than the length of the upper boat frame.
As an improvement of the scheme, the reaction gas pipe is provided with at least one gas outlet hole.
As improvement of the scheme, the furnace mouth heat insulation plate and the furnace tail heat insulation plate are respectively in airtight connection with the furnace barrel, the vacuumizing pipe and the reaction air pipe are respectively in airtight connection with the furnace tail heat insulation plate, and the oxygen pipe is in airtight connection with the vacuumizing pipe at the position extending out of the vacuumizing pipe.
The implementation of the utility model has the beneficial effects that:
according to the utility model, the oxygen pipe is embedded in the vacuumizing pipe, so that the oxygen pipe and the vacuumizing pipe are simultaneously arranged at the center of the furnace tail heat insulation plate, and the vacuumizing effect is not affected.
Meanwhile, the oxygen pipe passes through the center of the gas-barrier assembly, so that when oxygen is introduced, the oxygen enters from the center of the furnace tail and is not blocked by the gas-barrier assembly, and the distribution of the oxygen in the furnace is uniform; when the reaction gas is introduced from the reaction gas pipe, and the vacuum is pumped to keep the air pressure, the introduced reaction gas can not be pumped away quickly due to the existence of the gas separation plate assembly, so that the gas flow field introduced by the reaction gas pipe is basically unchanged.
Therefore, the utility model can make the effect of depositing the oxide film better, thereby improving the silicon wafer deposition efficiency.
Drawings
FIG. 1 is a schematic view of a furnace barrel structure of an embodiment of a silicon wafer deposition furnace according to the present utility model;
FIG. 2 is a schematic view of a furnace tube structure of an embodiment of a silicon wafer deposition furnace according to the present utility model;
FIG. 3 is a schematic view of a silicon wafer carrier assembly in accordance with an embodiment of the present utility model;
FIG. 4 is a schematic view of the structure of the furnace tail in an embodiment of the silicon wafer deposition furnace of the present utility model.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present utility model more apparent. It is only stated that the terms of orientation such as up, down, left, right, front, back, inner, outer, etc. used in this document or the imminent present utility model, are used only with reference to the drawings of the present utility model, and are not meant to be limiting in any way.
FIGS. 1 and 2 show the overall structure of a silicon wafer deposition furnace of the utility model, which comprises a furnace cylinder 1 and a furnace tube 2, wherein the furnace tube 2 is arranged in the furnace cylinder 1, one end of the furnace cylinder 1 is a furnace mouth 101, and the other end is a furnace tail 102; furnace tube 2 includes furnace mouth heat shield 201, boat 202, upper boat frame 203, lower boat frame 204, gas shield assembly 205, furnace tail heat shield 206, evacuation tube 207, oxygen tube 208, and reaction tube 209.
In order to ensure the air tightness of the silicon wafer deposition furnace, the furnace mouth heat insulation plate 201 arranged at the furnace mouth 101 can be in air-tight connection with the furnace barrel 1 to ensure the air tightness at the furnace mouth 101, and the furnace tail baffle 206 arranged at the furnace tail 102 can be in air-tight connection with the furnace barrel 1 to ensure the air tightness at the furnace tail 102.
The boat 202 is used for placing silicon wafers to be deposited, the boat 202 is supported in an upper boat frame 203, the upper boat frame 203 is supported in a lower boat frame 204, and one end of the lower boat frame 204 is fixedly embedded in a furnace mouth heat insulation plate 201.
The oxygen pipe 208 and the reaction gas pipe 209 are used for providing gas required by the deposition reaction for the silicon wafer deposition furnace, and the vacuumizing pipe 207 is used for controlling the air pressure in the silicon wafer deposition furnace; in order to make the vacuumizing effect better, a vacuumizing pipe 207 is arranged at the center of the furnace tail heat insulation plate 206; meanwhile, in order to prevent the gas in the furnace from being pumped away quickly, the utility model also provides the gas-isolation plate assembly 205, the oxygen pipe 208 is embedded in the vacuumizing pipe 207 and penetrates through the gas-isolation plate assembly 205, and the conveyed oxygen is not blocked by the gas-isolation plate assembly 205, so that the oxygen distribution is more uniform and the gas flow field introduced by the reaction gas pipe 209 is not influenced.
As shown in fig. 3, at least one silicon wafer 210 may be placed on the boat 202, the upper boat frame 203 and the lower boat frame 204 support the boat 202, the reaction gas pipe 209 is disposed at two sides of the lower boat frame 204 and extends toward the furnace mouth, the extension length of the reaction gas pipe 209 is greater than the length of the upper boat frame, and the reaction gas pipe 209 is provided with a plurality of gas outlet holes 211, which is beneficial to gas ventilation and distribution.
As shown in fig. 4, the evacuation tube 207 and the reaction gas tube 209 passing through the furnace tail baffle 206 are in airtight connection with the furnace tail baffle 206, so that the oxygen gas tube 208 embedded in the evacuation tube 207 can conveniently pass out of the evacuation tube 207, the evacuation tube 207 can be provided with a T-shaped bend, and the oxygen gas tube 208 passes out of the evacuation tube 207 and is in airtight connection with the evacuation tube 207, so that the operations of the evacuation tube 207 and the oxygen gas tube 208 cannot be affected mutually.
When the silicon wafer deposition furnace is used, a worker firstly places a silicon wafer 210 to be deposited on a boat 202; after enough silicon wafers 210 are placed, the boat 202 is placed in the upper boat frame 203, and then the upper boat frame 203 is placed in the lower boat frame 204, so that the furnace tube 2 can be installed in the furnace tube 1; after the installation, oxygen and other gases required by the deposition reaction can be introduced through the oxygen pipe 208 and the reaction gas pipe 209, and the furnace gas can be discharged through the vacuumizing pipe 207; after the deposition work is finished, the air pressure in the furnace can be reduced through the vacuumizing tube 207, so that the furnace tube 2 and the furnace tube 1 can be safely separated; finally, the silicon wafer can be removed as needed.
While the foregoing is directed to the preferred embodiments of the present utility model, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the utility model, such changes and modifications are also intended to be within the scope of the utility model.
Claims (7)
1. The silicon wafer deposition furnace is characterized by comprising a furnace barrel and a furnace tube arranged in the furnace barrel, wherein one end of the furnace barrel is a furnace mouth, and the other end of the furnace barrel is a furnace tail;
the furnace tube comprises a furnace mouth heat insulation plate, a silicon wafer bearing assembly, a gas insulation plate assembly, a furnace tail heat insulation plate, a vacuumizing tube, an oxygen tube and at least one reaction tube;
the furnace mouth heat insulation plate is arranged at the furnace mouth, the furnace tail heat insulation plate is arranged at the furnace tail, the silicon wafer bearing assembly is connected with the furnace mouth heat insulation plate, and the gas insulation plate assembly is arranged between the silicon wafer bearing assembly and the furnace tail heat insulation plate;
the reaction air pipe is arranged along the length direction of the furnace cylinder and penetrates through the furnace tail heat insulation plate, the vacuumizing pipe is arranged along the length direction of the furnace cylinder and penetrates through the center of the furnace tail heat insulation plate, the oxygen pipe is arranged inside the vacuumizing pipe along the length direction of the furnace cylinder, one end of the oxygen pipe extends out of the vacuumizing pipe, and the other end of the oxygen pipe penetrates through the center of the gas insulation plate assembly.
2. The silicon wafer deposition furnace of claim 1 wherein the silicon wafer carrier assembly comprises at least one boat for holding silicon wafers, an upper boat support and a lower boat support, the boat being disposed in the upper boat support and the upper boat being supported in the lower boat support.
3. The silicon wafer deposition furnace according to claim 2, wherein one end of the lower boat frame is fixedly embedded in the furnace mouth heat insulating plate.
4. The silicon wafer deposition furnace according to claim 2, wherein the reaction gas pipe is arranged along the length direction of the furnace cylinder and penetrates through the furnace tail heat insulation plate, and the reaction gas pipe passes through two sides of the gas insulation plate assembly and extends to the furnace mouth.
5. The silicon wafer deposition furnace of claim 4 wherein the reaction gas tube extends a length greater than the length of the upper boat frame.
6. The silicon wafer deposition furnace of claim 1, wherein the reaction gas pipe is provided with at least one gas outlet.
7. The silicon wafer deposition furnace according to claim 1, wherein the furnace mouth heat insulating plate and the furnace tail heat insulating plate are respectively connected with the furnace cylinder in an airtight manner, the vacuumizing tube and the reaction gas pipe are respectively connected with the furnace tail heat insulating plate in an airtight manner, and the oxygen gas pipe is connected with the vacuumizing tube in an airtight manner at a position extending out of the vacuumizing tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320533940.1U CN220202036U (en) | 2023-03-17 | 2023-03-17 | Silicon wafer deposition furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320533940.1U CN220202036U (en) | 2023-03-17 | 2023-03-17 | Silicon wafer deposition furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220202036U true CN220202036U (en) | 2023-12-19 |
Family
ID=89146051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320533940.1U Active CN220202036U (en) | 2023-03-17 | 2023-03-17 | Silicon wafer deposition furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220202036U (en) |
-
2023
- 2023-03-17 CN CN202320533940.1U patent/CN220202036U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant |