CN220099167U

CN220099167U - Carrier plate for PVD and PVD equipment

Info

Publication number: CN220099167U
Application number: CN202320875685.9U
Authority: CN
Inventors: 聂文杰; 徐升东
Original assignee: Ideal Wanlihui Semiconductor Equipment Shanghai Co ltd
Current assignee: Ideal Wanlihui Semiconductor Equipment Shanghai Co ltd
Priority date: 2023-04-18
Filing date: 2023-04-18
Publication date: 2023-11-28
Anticipated expiration: 2033-04-18

Abstract

The utility model provides a PVD carrier plate and PVD equipment. The PVD is with carrier plate including setting up a plurality of silicon chip carrier plates and the bracing piece that just interval was arranged each other between two transmission backup pads, the cross section of bracing piece is rhombus hexagon or fillet rectangle. The carrier plate for PVD can reduce the deformation of the carrier plate and meet the requirement of continuous increase of PVD productivity.

Description

Carrier plate for PVD and PVD equipment

Technical Field

The utility model relates to the field of solar cell manufacturing, in particular to a carrier plate for PVD and PVD equipment.

Background

The thin film/crystalline silicon heterojunction solar cell (hereinafter referred to as heterojunction solar cell, HIT or SHJ solar cell) belongs to the third generation high-efficiency solar cell technology, combines the advantages of the first generation crystalline silicon and the second generation silicon thin film, has the characteristics of high conversion efficiency, low temperature coefficient and the like, and particularly has broad market prospect, wherein the conversion efficiency of the double-sided heterojunction solar cell can reach more than 26%.

In heterojunction solar cell fabrication, a physical vapor deposition (Physical Vapor Deposition, PVD) process is required to be performed by a PVD apparatus in order to deposit transparent conductive films (TCO) on P-type amorphous silicon and N-type amorphous silicon formed by a PECVD process. With the continuous improvement of the whole line productivity of heterojunction solar cells, the productivity of PVD equipment is also required to be continuously improved. As shown in fig. 1, a carrier plate for PVD in the prior art includes a plurality of silicon wafer carrier plates 1, support rods 2 and transmission support plates 3, and the plurality of silicon wafer carrier plates 1 and support rods 2 are arranged at intervals between two transmission support plates 3. As shown in fig. 2, which is a sectional view taken along a sectional line A-A in fig. 1, the support bar 2 has a circular cross section, and the silicon wafer carrier plate 1 is inserted into a groove of the support bar 2 and fixed to the base 4 by a fixing member 5 such as a bolt. Along with the increase of the size of the silicon wafer bearing plate 1, the supporting and deformation inhibiting effects of the supporting rods 2 are gradually weakened, and the integral deformation of the PVD carrier plate can reach 4-5mm. The deformation increases the probability of the carried silicon wafer being detached from the carrier plate and broken.

Therefore, how to provide a carrier plate for PVD and a PVD apparatus, so as to reduce the deformation of the PVD carrier plate and meet the increasing demand of PVD productivity, has become a technical problem to be solved in the industry.

Disclosure of Invention

The utility model provides a PVD carrier plate, which comprises a plurality of silicon wafer carrier plates and supporting rods, wherein the silicon wafer carrier plates are arranged between two transmission supporting plates and are mutually spaced, and the cross sections of the supporting rods are diamond hexagons or filleted rectangles.

In one embodiment, the support rod is a hollow stainless steel rod, the wall thickness range is 2-6mm, the height range of the diamond hexagon is 20-50mm, the width range is 20-40mm, and the angle range of the diamond angle is 60-120 degrees.

In an embodiment, the height of the rounded rectangle is smaller than the height of the diamond hexagon, the width of the rounded rectangle is larger than the width of the diamond hexagon, the height range of the rounded rectangle is 20-40mm, the width range is 20-50mm, and the angle range of the rounded rectangle is 90-150 degrees.

In one embodiment, the PVD carrier plate has a length ranging from 2.5m to 3m, a width ranging from 2m to 2.5m, and a weight ranging from 100Kg to 150Kg.

In one embodiment, the support rods are provided with grooves matched with the edges of the silicon wafer bearing plates on two side surfaces adjacent to and parallel to the silicon wafer bearing plates, the lower side of each groove is provided with a support arm, and the edges of the silicon wafer bearing plates extend into the grooves and are fixed on the support arms through fixing pieces.

In one embodiment, the length of the supporting rod ranges from 2m to 2.5m, and 5 to 10 pairs of supporting arms are uniformly arranged on the supporting rod along the length direction of the supporting rod.

In one embodiment, the PVD carrier plate comprises three wafer carrier plates, each provided with wafer carrier regions arranged in a matrix, the wafer carrier regions being adapted to carry wafers of dimensions 156mm x 156mm, 166mm x 166mm, 182mm x 182mm, 91mm x 182mm, 105mm x 210mm or 210mm x 210 mm.

In one embodiment, the transmission supporting plate is configured as a C-shaped piece or an I-shaped piece, and a first square fixing block is arranged on the side wall of the transmission supporting plate corresponding to the supporting rod.

In one embodiment, two ends of the supporting rod are configured into second square fixing blocks, and the second square fixing blocks are correspondingly fixed on the first square fixing blocks of the C-shaped piece or the I-shaped piece.

The utility model also provides PVD equipment, which comprises a deposition cavity and a PVD carrier plate arranged in the deposition cavity, wherein a silicon wafer for carrying out a PVD process is carried on the PVD carrier plate, and the PVD carrier plate is any one of the PVD carrier plates.

Compared with the prior art that the deformation of the carrier plate is large due to the fact that the cross section of the supporting rod is circular, the carrier plate for PVD comprises a plurality of silicon wafer carrier plates and supporting rods, wherein the silicon wafer carrier plates and the supporting rods are arranged between two transmission supporting plates at intervals, and the cross section of each supporting rod is in a rhombic hexagon shape or a rounded rectangle shape. The carrier plate for PVD can reduce the deformation of the carrier plate and meet the requirement of continuous increase of PVD productivity.

Drawings

The above features and advantages of the present utility model will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.

FIG. 1 is a schematic diagram showing the structure of a PVD carrier plate according to the prior art.

Fig. 2 is a schematic cross-sectional view taken along section line A-A in fig. 1.

FIG. 3 is a schematic diagram showing the structure of a PVD carrier plate according to an embodiment of the utility model.

FIG. 4 is a schematic cross-sectional view of an embodiment of a PVD carrier plate along section line B-B in FIG. 3.

Detailed Description

The utility model will be described in detail below with reference to the drawings and the specific embodiments so that the objects, features and advantages of the utility model will be more clearly understood. It should be understood that the aspects described below in conjunction with the drawings and detailed embodiments are merely exemplary and should not be construed as limiting the scope of the utility model in any way. The singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. The terms "first," "second," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements.

Referring to fig. 3 to 4, fig. 3 is a schematic structural diagram of an embodiment of a PVD carrier plate according to the present utility model. FIG. 4 is a schematic cross-sectional view of an embodiment of a PVD carrier plate along section line B-B in FIG. 3. As shown in fig. 3, the carrier plate for PVD includes two transmission support plates 3, a plurality of silicon wafer carrier plates 6 disposed between the two transmission support plates 3 and arranged at intervals, and support rods 7, and the transmission support plates 3 and the silicon wafer carrier plates 6 and the support rods 7 are connected to each other. The cross section of the supporting rod 7 can be diamond hexagon or rounded rectangle.

The length of the PVD carrier plate ranges from 2.5m to 3m, the width of the PVD carrier plate ranges from 2m to 2.5m, and the weight of the PVD carrier plate ranges from 100Kg to 150Kg.

As shown in fig. 3, the carrier plate for PVD comprises three silicon wafer carrier plates 6 and four support rods 7, wherein each silicon wafer carrier plate 6 is provided with silicon wafer carrier areas 60 arranged in a matrix manner, and the silicon wafer carrier areas 60 are suitable for carrying silicon wafers with the sizes of 156mm×156mm, 166mm×166mm, 182mm×182mm, 91mm×182mm, 105mm×210mm or 210mm×210 mm. In the embodiment shown in fig. 3, each wafer carrier plate 6 comprises a 7 x 9 matrix of wafer carrier areas 60 adapted to carry 63 wafers 105mm x 210mm wafers (210 half-wafers).

The transmission support plate structure 3 is a C-shaped piece or an I-shaped piece, and a first square fixing block 30 is arranged on the side wall of the transmission support plate structure corresponding to the support rod 7. The two ends of the supporting rod 7 are configured into second square fixing blocks 70, and the second square fixing blocks 70 are correspondingly fixed on the first square fixing blocks 30 of the C-shaped piece or the I-shaped piece.

The supporting rod 7 is a hollow stainless steel rod, and the wall thickness range is 2-6mm. As shown in FIG. 4, the cross section of the supporting rod 7 is a diamond hexagon, the height of the diamond hexagon ranges from 20 mm to 50mm, the width ranges from 20 mm to 40mm, and the angle beta of the diamond angle ranges from 60 degrees to 120 degrees. In the embodiment shown in fig. 4, the angle β of the diamond angle is equal to 90 degrees.

In other embodiments, the cross section of the supporting rod 7 may be a rounded rectangle, the height of the rounded rectangle is smaller than the height of the diamond hexagon, the width of the rounded rectangle is larger than the width of the diamond hexagon, the height range of the rounded rectangle is 20-40mm, the width range is 20-50mm, and the angle range of the rounded corner is 90-150 degrees. In a more specific embodiment, the angle of the rounded corners is equal to 90 degrees.

As shown in fig. 4, the supporting rods 7 are provided with grooves (not shown) matching with the edges of the silicon wafer carrier plate on two parallel side surfaces 70 adjacent to the silicon wafer carrier plate 6, and support arms 72 are respectively arranged at the lower side of each groove, and the edges of the silicon wafer carrier plate 6 extend into the grooves and are fixed on the support arms 72 through fixing pieces 4 (such as bolts and the like). The length range of the supporting rod 7 is 2m-2.5m, and 5-10 pairs of supporting arms 72 are uniformly arranged on the supporting rod 7 along the length direction.

The utility model also provides PVD equipment, which comprises a deposition cavity and a PVD carrier plate arranged in the deposition cavity, wherein the PVD carrier plate is used for carrying a silicon wafer for carrying out a PVD process, and the PVD carrier plate is shown in figures 3-4.

The PVD carrier plate comprises a plurality of silicon wafer carrier plates and supporting rods, wherein the silicon wafer carrier plates are arranged between two transmission support plates and are arranged at intervals, and the cross sections of the supporting rods are diamond hexagons or filleted rectangles. The carrier plate for PVD can reduce the deformation of the carrier plate and meet the requirement of continuous increase of PVD productivity.

The embodiments described above are intended to provide those skilled in the art with a full range of modifications and variations to the embodiments described above without departing from the inventive concept thereof, and therefore the scope of the utility model is not limited by the embodiments described above, but is to be accorded the broadest scope consistent with the innovative features recited in the claims.

Claims

1. The PVD carrier plate comprises a plurality of silicon wafer carrier plates and supporting rods, wherein the silicon wafer carrier plates are arranged between two transmission supporting plates at intervals, and the PVD carrier plate is characterized in that the cross section of each supporting rod is a diamond hexagon, the height range of each diamond hexagon is 20-50mm, the width range of each diamond hexagon is 20-40mm, and the angle range of each diamond angle is 60-120 degrees.

2. The PVD carrier plate of claim 1 wherein the support rods are hollow stainless steel rods having a wall thickness in the range of 2-6mm.

3. The carrier plate for PVD according to claim 2, wherein the carrier plate for PVD has a length ranging from 2.5m to 3m, a width ranging from 2m to 2.5m, and a weight ranging from 100Kg to 150Kg.

4. The PVD carrier of claim 1 wherein the support rods have grooves on opposite sides adjacent and parallel to the wafer carrier plate that match the edges of the wafer carrier plate, and support arms are provided under each side of the grooves, the edges of the wafer carrier plate extending into the grooves and being secured to the support arms by fasteners.

5. The PVD carrier according to claim 4, wherein the length of the support rods ranges from 2m to 2.5m, and the support rods are uniformly provided with 5 to 10 pairs of support arms along the length direction thereof.

6. The carrier plate for PVD according to claim 1, wherein the carrier plate for PVD comprises three silicon wafer carrier plates, each provided with silicon wafer carrier areas arranged in a matrix, the silicon wafer carrier areas being adapted to carry silicon wafers of dimensions 156mm x 156mm, 166mm x 166mm, 182mm x 182mm, 91mm x 182mm, 105mm x 210mm or 210mm x 210 mm.

7. The PVD carrier plate of claim 1, wherein the drive support plate is configured as a C-shaped or i-shaped member having a first square shaped securing block disposed on a side wall thereof corresponding to the support bar.

8. The PVD carrier plate of claim 7, wherein the support bar is configured with second square shaped fixing blocks at both ends, the second square shaped fixing blocks being correspondingly fixed on the first square shaped fixing blocks of the C-shaped or i-shaped member.

9. A PVD apparatus comprising a deposition chamber and a PVD carrier plate disposed in the deposition chamber, the PVD carrier plate carrying thereon a silicon wafer subjected to a PVD process, characterized in that the PVD carrier plate is a PVD carrier plate according to any of claims 1 to 8.

10. The PVD carrier plate comprises a plurality of silicon wafer carrier plates and supporting rods, wherein the silicon wafer carrier plates and the supporting rods are arranged between two transmission support plates at intervals, and the PVD carrier plate is characterized in that the cross section of each supporting rod is in a round-corner rectangle, the height range of each round-corner rectangle is 20-40mm, the width range is 20-50mm, and the angle range of each round-corner is 90-150 degrees.

11. The PVD carrier plate of claim 10 wherein the support rods are hollow stainless steel rods having a wall thickness in the range of 2-6mm.

12. The carrier plate for PVD according to claim 11, wherein the carrier plate for PVD has a length ranging from 2.5m to 3m, a width ranging from 2m to 2.5m, and a weight ranging from 100Kg to 150Kg.

13. The PVD carrier plate of claim 10 wherein the support bar has grooves on opposite sides adjacent and parallel to the wafer carrier plate that match the edges of the wafer carrier plate and support arms on each side below the grooves, the edges of the wafer carrier plate extending into the grooves and being secured to the support arms by fasteners.

14. The PVD carrier plate of claim 13, wherein the support bar has a length ranging from 2m to 2.5m, and the support bar is uniformly provided with 5 to 10 pairs of support arms along its length.

15. The carrier plate for PVD according to claim 10, wherein the carrier plate for PVD comprises three silicon wafer carrier plates, each provided with silicon wafer carrier areas arranged in a matrix, the silicon wafer carrier areas being adapted to carry silicon wafers of dimensions 156mm x 156mm, 166mm x 166mm, 182mm x 182mm, 91mm x 182mm, 105mm x 210mm or 210mm x 210 mm.

16. PVD apparatus comprising a deposition chamber and a PVD carrier plate arranged in the deposition chamber, on which a silicon wafer for PVD process is carried, characterized in that the PVD carrier plate is a PVD carrier plate according to any of claims 10 to 15.