CN215266223U

CN215266223U - Tray for solar cell film formation

Info

Publication number: CN215266223U
Application number: CN202121593442.3U
Authority: CN
Inventors: 马哲国; 陈金元; 汪训忠
Original assignee: Ideal Energy Sunflower Vacuum Equipment Taixing Ltd
Current assignee: Ideal Energy Sunflower Vacuum Equipment Taixing Ltd
Priority date: 2021-07-14
Filing date: 2021-07-14
Publication date: 2021-12-21
Anticipated expiration: 2031-07-14

Abstract

The utility model provides a tray for solar cell film forming. The tray comprises a tray body, a plurality of groove units used for bearing the silicon wafers are arranged on the tray body, each groove unit comprises a groove matched with the shape of the silicon wafer, a supporting convex block is arranged in the middle of the bottom surface of each groove, and the supporting convex blocks are higher than the bottom surface of each groove by preset heights. The utility model discloses can effectively avoid the silicon chip edge around plating, improve battery efficiency, simplify the tray design, reduce the cost of tray.

Description

Tray for solar cell film formation

Technical Field

The utility model relates to a solar cell makes the field, especially relates to tray for solar cell film forming.

Background

The thin film/crystalline silicon heterojunction solar cell (hereinafter referred to as heterojunction solar cell, also called HIT or HJT or SHJ solar cell) belongs to the third-generation high-efficiency solar cell technology, combines the advantages of the first-generation crystalline silicon and the second-generation silicon thin film, has the characteristics of high conversion efficiency, low temperature coefficient and the like, particularly has the conversion efficiency of the double-sided heterojunction solar cell reaching more than 26 percent, and has wide market prospect.

In order to obtain higher module power and reduce unit cost, photovoltaic enterprises issue large-size silicon wafers (referred to as "large silicon wafers") with the specification or side length of 18Xmm (such as 180mm, 182mm or 188mm) and the size of 210mm, and when the large silicon wafers are used for manufacturing heterojunction solar cells, the core manufacturing process comprises the following steps: depositing a very thin I-type intrinsic amorphous silicon film and a very thin P-type amorphous silicon film on one surface of the N-type crystalline silicon with the textured surface by utilizing a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and depositing a thin I-type intrinsic amorphous silicon film and a thin N-type amorphous silicon film on the other surface of the crystalline silicon, wherein the amorphous silicon film preparation on the two surfaces can be carried out synchronously or step by step; and depositing transparent oxide conductive (ITO) films on two surfaces of the battery by using a Physical Vapor Deposition (PVD) process, and then manufacturing metal electrodes on the ITO films.

When depositing an amorphous silicon thin film or an ITO thin film on a silicon wafer, the deposition is performed by placing the silicon wafer in a tray. Fig. 1 shows a tray 1 for film formation of a solar cell, and the tray 1 includes a tray body 10 and a plurality of groove units 12 for placing silicon wafers, which are provided on the tray body 10. Fig. 2 and 3 show the structure of the groove unit 12 of the tray 1 in the first prior art. As shown in fig. 2 and 3, the bottom surface 120A of the groove 12A of the groove unit 12 in the first prior art is flat, and when the silicon wafer W is placed in the groove 12A, the silicon wafer W is in contact with the bottom surface 120A, and the surface texture of the silicon wafer W is easily damaged and scratched. Fig. 4 and 5 show the structure of the groove unit 12 of the tray 1 according to the second prior art. As shown in fig. 4 and 5, the bottom surface 120B of the groove 12B of the groove unit 12 in the second prior art is flat, the edge of the groove 12B is provided with a step 122B for supporting the silicon wafer W, when the edge of the silicon wafer W is placed on the step 122B, the middle of the silicon wafer W hangs in the air and slightly sags, the edge warps under the action of gravity, and the warping may cause plating during film formation by using a PECVD or PVD process, which affects the battery efficiency.

Therefore, how to provide a tray for forming a film of a solar cell, which can avoid edge wrap-around plating caused by overhanging bending of a silicon wafer, is a technical problem to be solved urgently in the industry.

Disclosure of Invention

To the above-mentioned problem of prior art, the utility model provides a tray is used in solar cell film forming, which comprises a disc body, be provided with a plurality of recess units that are used for bearing the weight of the silicon chip on the disk body, every recess unit include with silicon chip shape assorted recess, the middle part of grooved underside is provided with supporting lug, supporting lug is higher than grooved underside predetermined height.

In one embodiment, the bottom surface of the groove is a flat solid structure except for the region where the supporting bump is disposed.

In one embodiment, the predetermined height is 0.12-0.30 millimeters.

In one embodiment, the area of the supporting bump is less than 1 square millimeter.

In one embodiment, the recess is adapted to receive a single crystal silicon wafer of dimensions 166mm x 166mm, 180mm x 180mm, 91mm x 182mm, 94mm x 188mm, 105mm x 210mm, 182mm x 182mm, 188mm x 188mm or 210mm x 210 mm.

In one embodiment, the tray body has a width in the range of 150cm to 200cm, a length in the range of 100cm to 200cm, and a thickness in the range of 0.3cm to 1 cm.

In one embodiment, the support bumps are disposed at positions corresponding to the bus bars of the solar cell made of a silicon wafer.

In an embodiment, the supporting protrusion and the tray body are integrally formed, and the tray body and the supporting protrusion are made of the same material and are made of graphite, aluminum, stainless steel, ceramic, glass, polyimide or polyarylether.

In an embodiment, the supporting protrusion and the tray body are of a separate structure, the supporting protrusion is disposed on or coated on the bottom surface of the groove, the tray body is made of graphite, aluminum, stainless steel, ceramic, glass, polyimide or polyarylether, and the supporting protrusion is made of ceramic, teflon, aluminum or stainless steel.

In one embodiment, when a silicon wafer is placed in the groove, the middle of the silicon wafer is supported by the supporting bump, and the edge of the silicon wafer is in contact with the bottom surface of the groove.

The utility model discloses a tray for solar cell film forming includes the disk body, be provided with a plurality of recess units that are used for bearing the weight of the silicon chip on the disk body, every recess unit include with silicon chip shape assorted recess, the middle part of grooved underside is provided with supporting lug, supporting lug is higher than grooved underside predetermined height.

The utility model discloses can effectively avoid the silicon chip edge around plating, improve battery efficiency, simplify the tray design, reduce the cost of tray.

Drawings

The above features and advantages of the present invention will be better understood upon reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components having similar relative characteristics or features may have the same or similar reference numerals.

Fig. 1 is a schematic view of a composition structure of a tray for forming a film of a solar cell.

Fig. 2 is a schematic structural diagram of a groove unit of a tray for forming a film of a solar cell in the prior art.

Fig. 3 is a schematic structural view of a groove-supporting silicon wafer using the groove unit of fig. 2.

Fig. 4 is a schematic structural diagram of a groove unit of a film forming tray for a solar cell in the second prior art.

Fig. 5 is a schematic structural view of a silicon wafer supported by a groove using the groove unit of fig. 4.

Fig. 6 is a schematic diagram of the structure of the groove unit of the solar cell film forming tray according to the present invention.

Fig. 7 is a schematic structural view of a silicon wafer supported by a groove using the groove unit of fig. 6.

Detailed description of the preferred embodiments

The present invention will be described in detail below with reference to the attached drawings and specific embodiments so that the objects, features and advantages of the invention can be more clearly understood. It should be understood that the aspects described below in connection with the figures and the specific embodiments are exemplary only, and should not be construed as limiting the scope of the invention in any way. The singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

The present invention will be described in detail below with reference to specific embodiments shown in the drawings. It should be noted that the following embodiments are not intended to limit the present invention, and structural or functional changes made by those skilled in the art according to these embodiments are all included in the scope of the present invention.

Fig. 6 is a schematic diagram of a structure of the groove unit of the tray for forming a film on a solar cell according to the present invention. Referring to fig. 1, a tray 1 for forming a film on a solar cell includes a tray body 10, and a plurality of groove units 12 for supporting a silicon wafer are disposed on the tray body 10. The tray 10 in fig. 1 has a width in the range of 150cm to 200cm, a length in the range of 100cm to 200cm, and a thickness in the range of 0.3cm to 1 cm.

Referring to fig. 6, each groove unit 12 of the present invention includes a groove 12C matching with the shape of the silicon wafer, and a supporting protrusion 122C is disposed in the middle of the bottom surface 120C of the groove 12C, and the supporting protrusion 122C is higher than the bottom surface 120C by a predetermined height. The predetermined height is 0.12-0.30 mm. The area of the support protrusion 122C is less than 1 square millimeter. The groove bottom surface 120C is a flat solid structure except for the region where the supporting bump 122C is disposed.

The recess 12C is adapted to receive a single crystal silicon wafer of 166mm x 166mm, 180mm x 180mm, 91mm x 182mm, 94mm x 188mm, 105mm x 210mm, 182mm x 182mm, 188mm x 188mm or 210mm x 210mm, etc.

The support bump 122C is disposed at a position corresponding to a bus bar of a solar cell made of a silicon wafer. If the solar cell made of the silicon wafer adopts a half-wafer scheme, after the solar cell is cut into two, the small black spots generated by the supporting bumps 122C are just positioned on the cutting line, and the influence on the efficiency of the solar cell can be ignored. The supporting protrusion 122C and the tray body 10 may be integrally formed, and the tray body 10 and the supporting protrusion 122C are made of the same material and are made of graphite, aluminum, stainless steel, ceramic, glass, polyimide or polyarylether.

The supporting protrusion 122C and the tray body 10 may be separate structures, the supporting protrusion 122C is inserted into or coated on the groove bottom surface 120C, the tray body 10 is made of graphite, aluminum, stainless steel, ceramic, glass, polyimide or polyarylether, and the supporting protrusion 122C is made of ceramic, teflon, aluminum or stainless steel.

Referring to fig. 6 and 7, when depositing an amorphous silicon thin film or an ITO thin film on a silicon wafer W by a PECVD process or a PVD process, the single crystal silicon wafer W is first placed in the groove 12C, the middle of the silicon wafer W is supported by the support protrusion 122C, the edge of the silicon wafer W contacts the bottom surface 120C of the groove, the silicon wafer W forms a tent structure under the action of gravity, and the edge and the bottom surface 120C of the groove form an approximate seal, so that the formation of the wraparound plating in the PECVD or PVD plating process can be prevented.

The utility model discloses a tray for solar cell film forming includes the disk body, be provided with a plurality of recess units that are used for bearing the weight of the silicon chip on the disk body, every recess unit include with silicon chip shape assorted recess, the middle part of grooved underside is provided with supporting lug, supporting lug exceeds grooved underside predetermined height. The utility model discloses can effectively avoid the silicon chip edge around plating, improve battery efficiency, simplify the tray design, reduce the cost of tray.

It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.

The above-described embodiments are provided to enable persons skilled in the art to make or use the invention, and many modifications and variations may be made to the above-described embodiments by persons skilled in the art without departing from the inventive concept of the present invention, so that the scope of the invention is not limited by the above-described embodiments, but should be accorded the widest scope consistent with the innovative features set forth in the claims.

Claims

1. The tray for forming the film of the solar cell comprises a tray body, wherein a plurality of groove units used for bearing a silicon wafer are arranged on the tray body, and the tray is characterized in that each groove unit comprises a groove matched with the shape of the silicon wafer, a supporting lug is arranged in the middle of the bottom surface of the groove, and the supporting lug is higher than the preset height of the bottom surface of the groove.

2. The tray for forming a film on a solar cell according to claim 1, wherein the bottom surface of the groove is a flat solid structure except for a region where the support projection is provided.

3. The tray for forming a film on a solar cell according to claim 1, wherein the predetermined height is 0.12 to 0.30 mm.

4. The tray for forming a film on a solar cell according to claim 1, wherein an area of the support projection is less than 1 square millimeter.

5. The tray for forming a film on a solar cell according to claim 1, wherein the groove is adapted to accommodate a single crystal silicon wafer having a size of 166mm x 166mm, 180mm x 180mm, 91mm x 182mm, 94mm x 188mm, 105mm x 210mm, 182mm x 182mm, 188mm x 188mm or 210mm x 210 mm.

6. The tray for forming a film on a solar cell according to claim 1, wherein the tray body has a width in a range of 150cm to 200cm, a length in a range of 100cm to 200cm, and a thickness in a range of 0.3cm to 1 cm.

7. The tray for forming a film on a solar cell according to claim 1, wherein the support bumps are disposed at positions corresponding to main grid lines of a solar cell made of a silicon wafer.

8. The tray as claimed in claim 1, wherein the supporting protrusions are integrally formed with the tray body, and the tray body and the supporting protrusions are made of the same material and are made of graphite, aluminum, stainless steel, ceramic, glass, polyimide or polyarylether.

9. The tray as claimed in claim 1, wherein the supporting protrusions and the tray body are separated, the supporting protrusions are disposed on or coated on the bottom of the grooves, the tray body is made of graphite, aluminum, stainless steel, ceramic, glass, polyimide or polyarylether, and the supporting protrusions are made of ceramic, teflon, aluminum or stainless steel.

10. The tray for forming a film on a solar cell according to claim 1, wherein when a silicon wafer is placed in the groove, a middle portion of the silicon wafer is supported by the support projections, and an edge of the silicon wafer is in contact with a bottom surface of the groove.