CN220057020U - Baffle, spray assembly and semiconductor process equipment - Google Patents
Baffle, spray assembly and semiconductor process equipment Download PDFInfo
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- CN220057020U CN220057020U CN202321477362.0U CN202321477362U CN220057020U CN 220057020 U CN220057020 U CN 220057020U CN 202321477362 U CN202321477362 U CN 202321477362U CN 220057020 U CN220057020 U CN 220057020U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000007921 spray Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title abstract description 22
- 230000004323 axial length Effects 0.000 claims description 10
- 238000009826 distribution Methods 0.000 abstract description 19
- 238000005507 spraying Methods 0.000 abstract description 16
- 239000011148 porous material Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000018109 developmental process Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The embodiment of the utility model provides a baffle, a spray assembly and semiconductor process equipment, and relates to the technical field of semiconductor manufacturing. The baffle has middle part region and surrounds the marginal area in middle part region, and the middle part region of baffle is equipped with first air current hole, and the marginal area of baffle is equipped with the second air current hole, and first air current hole and second air current hole all are used for slowing down air current speed, and the degree that the first air current slowed down the air current velocity is greater than the degree of second air current Kong Jianhuan air current velocity. Under the condition of single-point air intake, the middle area is closer to a single air intake duct relative to the edge area, so that the air flow flowing through the baffle plate is dispersed, and meanwhile, the air flow speed of the spraying pore plate passing through the semiconductor process equipment is the same or approximately equal, the hole distribution and the hole shape of the spraying pore plate are avoided, the cost is lower, the processing time is short, and the development period of the semiconductor process equipment can be shortened.
Description
Technical Field
The utility model relates to the technical field of semiconductor manufacturing, in particular to a baffle, a spray assembly and semiconductor process equipment.
Background
In semiconductor processing equipment, the gas flow distribution of the baffle plate and the spray orifice plate plays a critical role in film deposition, which affects the uniformity of film deposition, which directly affects the quality of film formation. For example, a shower plate assembly in a CVD apparatus would include a shower plate and large baffles to adjust the uniformity of the gas flow distribution by designing the shower plate with different hole distributions and hole patterns.
In the prior art, sometimes, due to single-point air inlet, the air flow is unevenly distributed, and the shape and distribution of the holes need to be adjusted so that the air flow speed of the air from each hole of the spraying hole plate is the same or similar.
The distribution of holes and the shape of the holes of the spray hole plate are usually required to be regulated to regulate the distribution of air flow, but the spray hole plate has the defects of complex manufacturing process, higher cost and long processing time, so that the development period of semiconductor process equipment is longer.
Disclosure of Invention
The utility model provides a baffle plate, a spray assembly and semiconductor process equipment, which can shorten the development period of the semiconductor process equipment.
Embodiments of the utility model may be implemented as follows:
in a first aspect, the present utility model provides a baffle plate, the baffle plate having a central region and an edge region surrounding the central region, the central region of the baffle plate being provided with a first airflow aperture, the edge region of the baffle plate being provided with a second airflow aperture;
wherein, the first air flow hole and the second air flow hole are used for slowing down the air flow speed, and the first air flow hole slows down the air flow speed to a greater extent than the second air flow Kong Jianhuan.
In an alternative embodiment, the number of the first air flow holes and the number of the second air flow holes are multiple, and the density of the first air flow holes in the middle area is smaller than that of the second air flow holes in the edge area.
In an alternative embodiment, the baffle is a disc structure.
In an alternative embodiment, the baffle is in a conical structure, the baffle has a conical surface and a plane, the axial length of the first air flow hole is greater than the axial length of the second air flow hole, and the first air flow hole and the second air flow hole both penetrate through the conical surface and the plane.
In an alternative embodiment, the number of first air flow holes and the number of second air flow holes are each a plurality.
In an alternative embodiment, the first air flow holes are uniformly distributed in the middle area, and the second air flow holes are uniformly distributed in the edge area.
In an alternative embodiment, the baffle comprises a first rotating member and a second rotating member, wherein the first rotating member is provided with a plurality of first through holes, and the second rotating member is provided with a plurality of second through holes;
when the first rotating member rotates to a preset rotating position relative to the second rotating member, one part of the first through holes are communicated with one part of the second through holes to jointly form a plurality of first air flow holes, and the other part of the first through holes are communicated with the other part of the second through holes to jointly form a plurality of second air flow holes.
In an alternative embodiment, the baffle is a bowl-like structure.
In a second aspect, the present utility model provides a spray assembly comprising a spray orifice plate and a baffle according to any of the preceding embodiments, wherein an air flow is configured to flow through the spray orifice plate after passing through the first and second air flow apertures of the baffle.
In a third aspect, the present utility model provides a semiconductor processing apparatus comprising a showerhead assembly according to the previous embodiments.
The baffle, the spray assembly and the semiconductor process equipment of the embodiment of the utility model have the beneficial effects that:
the utility model provides a baffle plate, which is provided with a middle area and an edge area surrounding the middle area, wherein the middle area of the baffle plate is provided with a first airflow hole, and the edge area of the baffle plate is provided with a second airflow hole, wherein the first airflow hole and the second airflow hole are used for slowing down the airflow speed, and the degree of slowing down the airflow speed of the first airflow hole is larger than that of the second airflow Kong Jianhuan. The baffle can be suitable for semiconductor process equipment, under the condition of single-point air intake, the middle area is closer to a single air intake duct relative to the edge area, and because the degree of slowing down the flow velocity of the air flow by the first air flow hole is larger than the degree of slowing down the flow velocity of the air flow by the second air flow Kong Jianhuan, the air flow flowing through the baffle is dispersed, and meanwhile, the air flow velocity of a spraying pore plate passing through the semiconductor process equipment is the same or approximately equal, the hole distribution and the hole shape of the spraying pore plate are avoided, the cost is lower, the processing time is short, and the development period of the semiconductor process equipment can be shortened.
The utility model provides a spraying assembly, which comprises a spraying pore plate and the baffle plate, wherein air flows through the spraying pore plate after passing through a first air flow hole and a second air flow hole of the baffle plate, and the spraying assembly has all functions of the baffle plate.
The utility model provides a semiconductor process device which comprises the spraying assembly and has all functions of the spraying assembly.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a spray assembly provided in an embodiment of the present utility model;
FIG. 2 is a schematic view of a baffle provided in an embodiment of the present utility model;
fig. 3 is a schematic view of a baffle provided in other embodiments of the present utility model.
Icon: 100-baffle plates; 101-a first airflow aperture; 102-a second airflow aperture; 200-a shower nozzle upper plate; 300-fixing seat; 302-pore canal; 400-heating wires; 500-spraying an orifice plate; 600-vacuum cavity; 601-vacuum chamber.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present utility model and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present utility model may be combined with each other without conflict.
As mentioned in the background, in semiconductor processing equipment, the gas flow distribution of the baffle plate and the shower orifice plays a critical role in film deposition, which affects the uniformity of film deposition, which directly affects the quality of film formation.
For example, a shower plate assembly in a CVD apparatus would include a shower plate and large baffles to adjust the uniformity of the gas flow distribution by designing the shower plate with different hole distributions and hole patterns.
In the prior art, the holes of a common spraying pore plate and the holes of a disc-shaped large baffle are uniformly distributed, and sometimes the gas flow is unevenly distributed due to single-point air inlet, and the shape and the distribution of the holes need to be regulated so that the gas flow speed of the gas from each hole of the spraying pore plate is the same or similar.
The distribution of holes and the shape of the holes of the spray hole plate are usually required to be regulated to regulate the distribution of air flow, but the spray hole plate has the defects of complex manufacturing process, higher cost and long processing time, so that the development period of semiconductor process equipment is longer.
In view of this, referring to fig. 1-3, the baffle 100, the shower assembly and the semiconductor processing apparatus provided in the embodiments of the present utility model can solve the problem, and will be described in detail.
Referring to fig. 1, the present utility model provides a semiconductor process apparatus, which includes a spray assembly, a fixing base 300, a vacuum chamber 600 and a showerhead upper plate 200, wherein a heating wire 400 is embedded in the showerhead upper plate 200 for heating the showerhead upper plate 200, the fixing base 300 is shaped like a Chinese character 'ji', the showerhead upper plate 200 is fixed in the vacuum chamber 600 through the fixing base 300, and the vacuum chamber 600 has a vacuum chamber 601.
The spray assembly comprises a spray pore plate 500 and a baffle plate 100, wherein the spray pore plate 500 and the baffle plate 100 are fixed on a spray head upper plate 200 through screws, the spray head upper plate 200 is provided with a single pore channel 302, gas can enter through the single pore channel 302, the gas is dispersed to the periphery through the baffle plate 100, and finally, the gas enters into a vacuum chamber 601 through all holes on the spray pore plate 500, and finally, a film is deposited on the surface of a wafer.
The air flows through the shower orifice 500 after passing through the first air flow hole 101 and the second air flow hole 102 of the baffle 100, so that the baffle 100 makes the air flow speed of the shower orifice 500 passing through the semiconductor process equipment be the same or approximately equal, the adjustment of the hole distribution and the hole shape of the shower orifice 500 is avoided, the manufacturing cost is lower, the processing time is short, and the development period of the semiconductor process equipment can be shortened.
Referring to fig. 2, specifically, the baffle 100 has a middle area and an edge area surrounding the middle area, the middle area of the baffle 100 is provided with a first airflow hole 101, and the edge area of the baffle 100 is provided with a second airflow hole 102, wherein the first airflow hole 101 and the second airflow hole 102 are used for reducing the airflow velocity, and the first airflow hole 101 reduces the airflow velocity to a greater extent than the second airflow hole 102 reduces the airflow velocity.
The baffle 100 may be adapted for use in a semiconductor processing apparatus where, in the case of single point gas inlet, the central region is closer to the single inlet port 302 than the edge regions, so that when gas passing through the port 302 enters the baffle 100, the flow rate in the central region may be higher than in the edge regions, ultimately affecting the uniformity of the gas flow through the shower plate 500.
Since the first air flow holes 101 slow down the flow rate of the air flow more than the second air flow holes 102 slow down the flow rate of the air flow, the air flow passing through the baffle 100 is dispersed while the air flow passing through the shower orifice 500 of the semiconductor process equipment is made to be the same or approximately the same.
That is, the baffle 100 ensures uniformity of air flow distribution through the shower orifice 500, avoids adjustment of hole distribution and hole shape of the shower orifice 500, has lower cost and short processing time, and can shorten development cycle of semiconductor process equipment.
In this embodiment, the baffle 100 has a disc structure, and the number of the first air flow holes 101 and the number of the second air flow holes 102 are multiple, and the density of the first air flow holes 101 in the middle area is smaller than that of the second air flow holes 102 in the edge area.
It should be noted that, here, the edge area of the baffle 100 may be understood as an annular area of the circular surface of the baffle 100, in which four circles of the second airflow holes 102 are included, each circle including a plurality of evenly distributed second airflow holes 102, which are circular around the circular surface of the baffle 100.
The central region is understood herein to mean a region of the circular face of the baffle 100 other than the edge region, the central region being a circular region, the density of the plurality of first airflow apertures 101 in the central region being less than the density of the plurality of second airflow apertures 102 in the edge region.
The density of the first airflow holes 101 in the middle area is smaller than that of the second airflow holes 102 in the edge area, so that the resistance of the airflow is larger, the airflow in the middle area is slower to diffuse, and the resistance of the airflow is smaller, so that the airflow in the edge area diffuses faster, the first airflow holes 101 in the middle area slow down the airflow velocity to a greater extent than the second airflow holes 102 in the edge area slow down the airflow velocity, and finally the airflow velocity passing through the spray orifice 500 is the same or approximately equal.
Referring to fig. 3, in other embodiments, the baffle 100 may also have a conical structure, the baffle 100 has a conical surface and a plane, the axial length of the first air flow hole 101 is greater than the axial length of the second air flow hole 102, and the first air flow hole 101 and the second air flow hole 102 both penetrate the conical surface and the plane, and the plane is a circular plane.
In this embodiment, the number of the first air flow holes 101 and the number of the second air flow holes 102 are multiple, the aperture of the first air flow holes 101 is equal to the aperture of the second air flow holes 102, the multiple first air flow holes 101 are uniformly distributed in the middle area, and the multiple second air flow holes 102 are uniformly distributed in the edge area.
It should be noted that when the baffle 100 has a conical structure, the central region may be understood as a conical surface region from the apex of the conical surface to the midpoint of the bus bar, and the edge region may be understood as a region of the entire cone shape except the central region.
It should be noted that, the plurality of first air flow holes 101 form a plurality of circles of first air flow holes 101 around the vertex of the conical surface, the interval between the adjacent circles of first air flow holes 101 is a first interval, the plurality of first intervals are the same, the plurality of second air flow holes 102 form a plurality of circles of second air flow holes 102 around the vertex of the conical surface, the interval between the adjacent circles of second air flow holes 102 is a second interval, the plurality of second intervals are the same, and the first interval is equal to the second interval.
That is, the first and second air flow holes 101 and 102 herein may be understood as baffle through holes whose axes are parallel or collinear with a line perpendicular to the planar circle.
And the baffle through holes are uniformly distributed on the whole conical surface, wherein the longer the axial length of the baffle through holes is, the shorter the length of the baffle through holes is.
Of course, it is also understood that the longer the axial length of the baffle through hole located closer to the apex of the conical surface is the first airflow hole 101 located in the middle region, the shorter the baffle through hole length is located closer to the edge of the conical surface.
And, the longer the axial length of the baffle through hole located closer to the apex of the conical surface of the first airflow hole 101 in the edge region, the shorter the baffle through hole length closer to the edge of the conical surface.
It is easy to understand that the longer the axial length of the baffle through hole, the more the friction resistance between the gas and the inner wall of the baffle through hole will be increased, resulting in an increase in the resistance of the gas flow, so that the first gas flow holes 101 in the middle area can slow down the gas flow velocity to a greater extent than the second gas flow holes 102 in the edge area, and finally the gas flow velocity passing through the shower orifice plate 500 is the same or approximately the same.
In other embodiments, the baffle 100 includes a first rotating member and a second rotating member, the first rotating member is provided with a plurality of first through holes, the second rotating member is provided with a plurality of second through holes, wherein the second rotating member is connected to the upper plate 200 of the spray head, the first rotating member can rotate relative to the second rotating member, when the first rotating member rotates to a preset rotation position relative to the second rotating member, a part of the first through holes are communicated with a part of the second through holes to jointly form a plurality of first air flow holes 101, and another part of the first through holes are communicated with another part of the second through holes to jointly form a plurality of second air flow holes 102.
For example, the plurality of first air flow holes 101 and the plurality of second air flow holes 102 are constituted by communicating a part of the first through holes with a part of the second through holes, and the remaining part of the first through holes or the remaining part of the second through holes are blocked.
Alternatively, all the first through holes communicate with all the second through holes to form a plurality of first air flow holes 101 and a plurality of second air flow holes 102.
The density of the first airflow holes 101 in the middle area may be smaller than that of the second airflow holes 102 in the edge area (as shown in fig. 2), so that the airflow in the middle area spreads slowly, and the airflow in the edge area spreads faster, and the airflow velocity of the first airflow holes 101 in the middle area is reduced more than that of the second airflow holes 102 in the edge area, and the airflow velocity through the shower orifice plate 500 is the same or approximately the same.
In other embodiments, the baffle 100 is bowl-shaped, the baffle 100 having a recess that opens toward the showerhead upper plate 200, where a central region of the baffle 100 may be understood as a recess bottom region and an edge region may be understood as a sidewall region adjacent to the recess bottom region.
At this time, the distance between the first air flow holes 101 in the middle area and the hole 302 is greater than the distance between the second air flow holes 102 in the edge area and the hole 302, and the density of the first air flow holes 101 in the middle area may be smaller than the density of the second air flow holes 102 in the edge area, so that the air flow in the middle area is slow, and the air flow in the edge area is fast, so that the air flow speed of the first air flow holes 101 in the middle area is slower than the air flow speed of the second air flow holes 102 in the edge area, and finally the air flow speed passing through the spray orifice 500 is the same or approximately equal.
In summary, the baffle 100 has a middle area and an edge area surrounding the middle area, the middle area of the baffle 100 is provided with the first airflow hole 101, and the edge area of the baffle 100 is provided with the second airflow hole 102, wherein the first airflow hole 101 and the second airflow hole 102 are used for reducing the airflow velocity, and the degree of reducing the airflow velocity of the first airflow hole 101 is greater than the degree of reducing the airflow velocity of the second airflow hole 102.
The baffle 100 may be suitable for use in a semiconductor processing apparatus, in which in the case of single-point air intake, the middle area is closer to the single air intake duct 302 than the edge area, and since the first air flow hole 101 slows down the air flow rate to a greater extent than the second air flow hole 102 slows down the air flow rate, the air flow passing through the baffle 100 is dispersed, and at the same time, the air flow rate passing through the shower orifice 500 of the semiconductor processing apparatus is the same or approximately equal, that is, the uniformity of the air flow distribution passing through the shower orifice 500 is ensured by the baffle 100, the adjustment of the hole distribution and the shape of the hole of the shower orifice 500 is avoided, the cost is lower, the processing time is short, and the development period of the semiconductor processing apparatus can be shortened.
The shower assembly includes the shower orifice 500 and the baffle 100 described above, wherein the air flow is configured to flow through the shower orifice 500 after passing through the first air flow holes 101 and the second air flow holes 102 of the baffle 100, and the shower assembly has all the functions of the baffle 100 described above.
The semiconductor process equipment comprises the spraying assembly, and the semiconductor process equipment has all functions of the spraying assembly.
The foregoing is merely illustrative of the present utility model, and the present utility model is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present utility model should be included in the present utility model. Therefore, the protection scope of the present utility model shall be subject to the protection scope of the claims.
Claims (10)
1. A baffle plate, characterized in that the baffle plate is provided with a middle area and an edge area surrounding the middle area, the middle area of the baffle plate is provided with a first air flow hole, and the edge area of the baffle plate is provided with a second air flow hole;
wherein, the first air flow hole and the second air flow hole are used for slowing down the air flow speed, and the first air flow hole slows down the air flow speed to a greater extent than the second air flow Kong Jianhuan.
2. The baffle of claim 1 wherein the number of first air flow holes and the number of second air flow holes are each a plurality, the density of the plurality of first air flow holes in the central region being less than the density of the plurality of second air flow holes in the edge region.
3. The baffle of claim 2, wherein the baffle is a disc structure.
4. The baffle of claim 1 wherein the baffle is of a conical configuration, the baffle has a conical surface and a planar surface, the axial length of the first airflow aperture is greater than the axial length of the second airflow aperture, and both the first airflow aperture and the second airflow aperture extend through the conical surface and the planar surface.
5. The baffle of claim 4 wherein the number of first airflow apertures and the number of second airflow apertures are each a plurality.
6. The baffle plate of claim 5 wherein a plurality of said first airflow apertures are uniformly distributed in said central region and a plurality of said second airflow apertures are uniformly distributed in said edge region.
7. The baffle plate according to claim 2, wherein the baffle plate comprises a first rotating member and a second rotating member which are opposite to each other, a plurality of first through holes are formed in the first rotating member, and a plurality of second through holes are formed in the second rotating member;
when the first rotating member rotates to a preset rotating position relative to the second rotating member, one part of the first through holes are communicated with one part of the second through holes to jointly form a plurality of first air flow holes, and the other part of the first through holes are communicated with the other part of the second through holes to jointly form a plurality of second air flow holes.
8. The baffle of claim 2, wherein the baffle is bowl-shaped.
9. A spray assembly comprising a spray orifice plate and the baffle of any one of claims 1-8, wherein an air flow is configured to flow through the spray orifice plate after passing through the first and second air flow holes of the baffle.
10. A semiconductor processing apparatus comprising the showerhead assembly of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321477362.0U CN220057020U (en) | 2023-06-09 | 2023-06-09 | Baffle, spray assembly and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321477362.0U CN220057020U (en) | 2023-06-09 | 2023-06-09 | Baffle, spray assembly and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220057020U true CN220057020U (en) | 2023-11-21 |
Family
ID=88757229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321477362.0U Active CN220057020U (en) | 2023-06-09 | 2023-06-09 | Baffle, spray assembly and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220057020U (en) |
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2023
- 2023-06-09 CN CN202321477362.0U patent/CN220057020U/en active Active
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