CN219997233U - IGBT double pulse testing device and system - Google Patents

Abstract

The utility model provides an IGBT double-pulse testing device and a system, and relates to the technical field of semiconductor device testing, wherein the IGBT double-pulse testing device comprises a double-pulse generator, a high-voltage numerical control direct current power supply, a reactor and a temperature controller; the temperature controller comprises a heating plate, a heating main control board, a cooling device and a temperature processing module, and a first temperature sensor and a second temperature sensor are respectively arranged on the heating plate and the cooling device; the heating plate is an integrated heating structure; the temperature processing module is used for acquiring temperature data detected by the first temperature sensor and the second temperature sensor and sending a temperature regulation instruction to the heating main control board and/or the cooling device; the IGBT double-pulse testing device can simulate the real working condition of the tested IGBT through the temperature controller, the accuracy of the testing result is improved, and the temperature controller adopts the closed-loop temperature control and the heating plate with the integrated heating structure, so that the accuracy of the testing result can be improved.

Description

IGBT double pulse testing device and system

Technical Field

The utility model relates to the technical field of semiconductor device testing, in particular to an IGBT double-pulse testing device and system.

Background

The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short) is a compound full-control type voltage-driven power semiconductor device which consists of a bipolar triode (Bipolar Junction Transistor, BJT for short) and an insulated gate field effect transistor (Metal Oxide Semiconductor FET, MOSFET for short, namely MOS transistor), and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of GTR (Giant Transistor).

Before using the IGBT, in order to verify whether the parameters and performance of the IGBT meet the requirements, a double pulse test is required for the IGBT. However, the existing IGBT double-pulse test mode has an inaccurate test result.

Disclosure of Invention

The utility model aims to provide an IGBT double-pulse testing device and system so as to improve the accuracy of a testing result.

The embodiment of the utility model provides an IGBT double-pulse testing device which comprises a double-pulse generator, a high-voltage numerical control direct current power supply, a reactor and a temperature controller, wherein the high-voltage numerical control direct current power supply is connected with the reactor;

the double pulse generator is connected with the IGBT to be tested and is used for sending pulse control signals to the IGBT to be tested;

the high-voltage numerical control direct current power supply and the reactor are respectively connected with the IGBT to be tested;

the temperature controller comprises a heating plate, a heating main control board, a cooling device and a temperature processing module, wherein a first temperature sensor and a second temperature sensor are respectively arranged on the heating plate and the cooling device; the heating plate is of an integrated heating structure, the upper surface of the heating plate is used for placing the IGBT to be tested, and the heating main control board is used for controlling the working state of the heating plate; the cooling device is used for cooling the temperature of the heating plate; the temperature processing module is respectively connected with the first temperature sensor, the second temperature sensor, the heating main control board and the cooling device, and is used for acquiring temperature data detected by the first temperature sensor and the second temperature sensor and issuing a temperature regulation instruction to the heating main control board and/or the cooling device.

Further, the cooling device comprises a cooling plate arranged below the heating plate.

Further, the IGBT double pulse testing device further comprises a shell, the double pulse generator, the high-voltage numerical control direct current power supply, the reactor, the heating main control board and the temperature processing module are all located in the shell, and the heating plate and the cooling device are all located above the shell.

Further, a temperature setting module is further arranged on the outer surface of the shell, and the temperature setting module is connected with the temperature processing module.

Further, the temperature setting module comprises a temperature adjusting knob or a temperature adjusting display.

Further, the two ends of the high-voltage numerical control direct current power supply are connected with high-voltage capacitors in parallel.

Further, the IGBT double-pulse testing device further comprises a testing display module, wherein the testing display module is connected with the tested IGBT and used for reading and displaying the testing data of the tested IGBT.

Further, the IGBT double-pulse testing device further comprises a heating display module connected with the heating main control board, and the heating display module is used for displaying voltage, current and power when the heating plate heats.

Further, the high-voltage numerical control direct current power supply is connected with the to-be-tested IGBT through a high-voltage switch, the IGBT double-pulse testing device further comprises an indicator lamp connected with the high-voltage switch, and the indicator lamp is used for indicating the working state of the IGBT double-pulse testing device.

The embodiment of the utility model also provides an IGBT double-pulse test system, which comprises the IGBT double-pulse test device of the first aspect and an upper computer;

the upper computer is connected with the double pulse generator and is used for controlling the double pulse generator to send pulse control signals to the IGBT to be tested.

In the IGBT double-pulse testing device and the IGBT double-pulse testing system provided by the embodiment of the utility model, the IGBT double-pulse testing device comprises a double-pulse generator, a high-voltage numerical control direct current power supply, a reactor and a temperature controller; the double pulse generator is connected with the IGBT to be tested and is used for sending pulse control signals to the IGBT to be tested; the high-voltage numerical control direct current power supply and the reactor are respectively connected with the IGBT to be tested; the temperature controller comprises a heating plate, a heating main control board, a cooling device and a temperature processing module, and a first temperature sensor and a second temperature sensor are respectively arranged on the heating plate and the cooling device; the heating plate is of an integrated heating structure, the upper surface of the heating plate is used for placing the IGBT to be tested, and the heating main control board is used for controlling the working state of the heating plate; the cooling device is used for cooling the temperature of the heating plate; the temperature processing module is respectively connected with the first temperature sensor, the second temperature sensor, the heating main control board and the cooling device, and is used for acquiring temperature data detected by the first temperature sensor and the second temperature sensor and issuing a temperature regulation instruction to the heating main control board and/or the cooling device. The IGBT double pulse testing device can realize double pulse testing of the IGBT to be tested through the double pulse generator, the high-voltage numerical control direct current power supply and the reactor, can simulate the real working condition of the IGBT to be tested through the temperature controller, improves the accuracy of a testing result, adopts closed-loop temperature control, can ensure the accuracy of the temperature of the IGBT to be tested, and the heating plate of the integrated heating structure can ensure the uniformity of the temperature of the IGBT to be tested, thereby improving the accuracy of the testing result.

Drawings

In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic diagram of a modular structure of an IGBT double pulse test device according to an embodiment of the present utility model;

fig. 2 is an external schematic view of an IGBT double pulse testing device according to an embodiment of the present utility model;

fig. 3 is a schematic diagram of a double pulse test of an IGBT double pulse test device according to an embodiment of the present utility model;

FIG. 4 is a waveform diagram of a double pulse test according to an embodiment of the present utility model;

FIG. 5 is a waveform diagram of a dual-pulse test turn-on procedure according to an embodiment of the present utility model;

FIG. 6 is a waveform diagram of a shutdown procedure for a double pulse test according to an embodiment of the present utility model;

fig. 7 is a schematic diagram of a modular structure of an IGBT double pulse test system according to an embodiment of the present utility model;

fig. 8 is a schematic diagram of a test flow of an IGBT double pulse test system according to an embodiment of the utility model;

fig. 9 is a schematic flow chart of a double pulse testing algorithm of an IGBT double pulse testing system according to an embodiment of the present utility model.

Icon: a 100-double pulse generator; 200-high-voltage numerical control direct current power supply; 300-reactor; 400-temperature controller; 401-heating plate; 402-heating a main control board; 403-cooling means; 404-a temperature processing module; 405-a first temperature sensor; 406-a second temperature sensor; 407-a housing; 408-a power switch; 409-temperature switch; 410-a temperature regulated display; 411-heating the display module; 10-IGBT double pulse testing device; 20-upper computer.

Detailed Description

The technical solutions of the present utility model will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

The IGBT is used as a high-power switching device, and is applied to a system with a dc voltage of 600V or more, and is often applied to a system with high voltages of 1700V, 3300V, 4500V, 6500V, so that the stability of the IGBT application is very important, and a very small change of the control terminal may have a very large influence on the high voltage side. The IGBT parameters are usually known by a data manual, but the IGBT parameters on the data manual correspond to certain environmental conditions, and are not invariable, but the operating states of different IGBT parameters, even the same IGBT parameters, are greatly different in different application environments. Therefore, when the IGBT is used for selecting the drive, the IGBT and the drive are matched for application, besides detecting the static working condition of the drive, a dynamic experiment is required, and the dynamic matching experiment can adopt a double-pulse test.

According to the conventional IGBT double-pulse test mode, the test result is not accurate enough, and based on the IGBT double-pulse test mode and the IGBT double-pulse test system, the accuracy of the test result can be improved.

For the sake of understanding the present embodiment, first, an IGBT double pulse testing device disclosed in the present embodiment is described in detail.

As shown in fig. 1 and fig. 2, an IGBT double pulse testing device provided by an embodiment of the utility model includes a double pulse generator 100, a high voltage digitally controlled dc power supply 200, a reactor 300, and a temperature controller 400.

The double pulse generator 100 is connected with the IGBT to be tested, and the double pulse generator 100 is used for sending pulse control signals to the IGBT to be tested; the high-voltage numerical control direct current power supply 200 and the reactor 300 are respectively connected with the IGBT to be tested. Double pulse testing of the tested IGBT can be achieved through the double pulse generator 100, the high-voltage numerical control direct current power supply 200 and the reactor 300, and parameters of test driving and the IGBT are matched by utilizing a double pulse testing principle.

The temperature controller 400 comprises a heating plate 401, a heating main control board 402, a cooling device 403 and a temperature processing module 404, wherein a first temperature sensor 405 and a second temperature sensor 406 are respectively arranged on the heating plate 401 and the cooling device 403. Wherein, the heating plate 401 is an integrated heating structure, the upper surface of the heating plate 401 is used for placing the IGBT to be tested, and the heating main control board 402 is used for controlling the working state of the heating plate 401; the cooling device 403 is used for cooling the temperature of the heating plate 401; the temperature processing module 404 is respectively connected with the first temperature sensor 405, the second temperature sensor 406, the heating main control board 402 and the cooling device 403, and the temperature processing module 404 is configured to obtain temperature data detected by the first temperature sensor 405 and the second temperature sensor 406, and send a temperature adjustment instruction to the heating main control board 402 and/or the cooling device 403. Wherein, the integral heating structure means that the heating plate 401 is a whole, and is distinguished from: heating sheet, heating tube, heating wire, etc. The working condition of the IGBT can be simulated more truly through the temperature controller 400, and the working condition of the IGBT in the real environment can be reflected more truly, because the temperature of the IGBT device working for a long time can be increased, the temperature increase can cause the change of parameters in all aspects.

The IGBT double-pulse testing device has the temperature adjusting function: in order to simulate the IGBT working environment more truly, a temperature-adjustable environment is designed, a first temperature sensor 405 is arranged on a heating plate 401, and if the temperature of the heating plate 401 is greater than a certain set value, a temperature processing module 404 is started to give an adjusting instruction; a cooling device 403 is also provided for cooling the temperature of the heating plate 401, and a temperature sensor is also provided on the cooling device 403, so as to ensure that the cooling device 403 can perform a cooling function. The temperature regulating function can ensure that the temperature of the IGBT to be measured is constant and reliable.

In order to keep the voltage obtained by the tested IGBT stable, the two ends of the high-voltage numerical control direct current power supply 200 are connected with high-voltage capacitors in parallel. The high-voltage capacitor may be a conventional capacitor without dividing the positive electrode from the negative electrode, or may be a capacitor with dividing the positive electrode from the negative electrode, such as an electrolyte capacitor.

Optionally, a resistor may be connected in parallel to two ends of the high-voltage digital control dc power supply 200 to enhance the current control capability of the high-voltage digital control dc power supply 200, and pull down the raised voltage to avoid runaway; at the same time, when the power is cut off, the resistor can discharge residual electricity.

Optionally, the high-voltage digital control direct current power supply 200 is connected with the IGBT to be tested through a high-voltage switch, and the IGBT double-pulse testing device further includes an indicator light connected with the high-voltage switch, where the indicator light is used to indicate the working state of the IGBT double-pulse testing device. The pilot lamp can be the double-colored pilot lamp, also can constitute by the lamp of two different colours, and wherein, double-colored pilot lamp can adopt double-chip lamp pearl, shows different colours under different electric currents. For example, when a high voltage switch is turned on, a red light is turned on; when the high-voltage switch is turned off and the discharge is completed, a green light is turned on.

Optionally, for testing convenience and more intuitively realizing display, the above-mentioned IGBT double pulse testing device further includes a test display module, where the test display module is connected with the IGBT to be tested, and the test display module is used for reading and displaying test data of the IGBT to be tested. The test display module may be, but is not limited to, a display device such as an oscilloscope or a display screen.

In the embodiment of the utility model, the double pulse testing device of the IGBT can realize double pulse testing of the IGBT to be tested through the double pulse generator 100, the high-voltage numerical control direct current power supply 200 and the reactor 300, the real working condition of the IGBT to be tested can be simulated through the temperature controller 400, the accuracy of the testing result is improved, the temperature controller 400 adopts closed-loop type temperature control, the accuracy of the temperature of the IGBT to be tested can be ensured, and the heating plate 401 of the integrated heating structure can ensure the uniformity of the temperature of the IGBT to be tested, so that the accuracy of the testing result can be improved.

Optionally, the cooling device 403 includes a cooling plate disposed below the heating plate 401. The cooling plate and the heating plate 401 have a larger contact area, so that the heating plate 401 can be rapidly cooled.

Optionally, as shown in fig. 2, the above-mentioned IGBT double-pulse testing device further includes a housing 407, where the double-pulse generator 100, the high-voltage digital control dc power supply 200, the reactor 300, the heating main control board 402, and the temperature processing module 404 are all located in the housing 407, and the heating plate 401 and the cooling device 403 are all located above the housing 407.

Optionally, the outer surface of the housing 407 is further provided with a power switch 408 and a temperature switch 409, and the power switch 408 and the temperature switch 409 may be turned on as required during operation. For example, when the power switch 408 is pressed down at power-on, the IGBT double pulse test device is started; if the power switch 408 needs to be turned off, the power switch is pressed again; when the temperature switch 409 is turned on for heating, the heating is performed according to the set temperature value.

Optionally, a temperature setting module is further disposed on an outer surface of the housing 407, and the temperature setting module is connected with the temperature processing module. The user can change the temperature value to be set through the temperature setting module, and the temperature processing module can control the heating main control board 402 to work based on the set temperature value.

Further, the temperature setting module may include a temperature adjustment knob or a temperature adjustment display 410 as shown in fig. 2. For example, the temperature value displayed may be changed by pressing a set key, an up key, or a down key on the temperature adjustment display 410, and when the temperature value to be set is reached, the determination key may be pressed. Both the current temperature of the heating plate 401 and the set temperature value may be displayed on the temperature adjustment display 410. The power switch 408 is pressed and the temperature adjustment display 410 is electrically operated.

Optionally, the above-mentioned IGBT double pulse testing device further includes a heating display module 411 connected to the heating main control board 402, where the heating display module 411 is used for displaying voltage, current, power, etc. when the heating plate 401 heats. The power switch 408 is pressed and the heating display module is operated by 411.

The following describes the principle of double pulse testing of the IGBT double pulse testing device with reference to fig. 3 to 4. As shown in fig. 3, the IGBT to be tested includes a first switching tube T1, a second switching tube T2, a first diode D1, and a second diode D2, where a gate electrode of the first switching tube T1 is connected to-15V, two ends of the first switching tube T1 are connected in parallel with a reactor L, that is, an inductor or a load, and a gate electrode of the second switching tube T2 performs a double pulse test by acquiring a double pulse signal; the high-voltage numerical control direct current power supply Vd is connected with the IGBT to be tested through a high-voltage switch S1 and a direct current bus, two ends of the high-voltage numerical control direct current power supply Vd are respectively connected with a resistor R and a high-voltage capacitor C in parallel, and a switch S2 is arranged on a branch where the resistor R is located.

Purpose of double pulse test: and (3) comparing different IGBT parameters, evaluating various functional parameters and performance indexes of the IGBT driving plate to obtain the application data with the truest dynamic state, evaluating whether the dynamic characteristic parameters are reasonable or not and are in a safe working range, preventing the machine from being fried in practical application, and matching with the most suitable Rg on (on resistance) and Rg off (off resistance). It is necessary to know whether there is an oscillation in the switching process, whether the oscillation amplitude is acceptable, whether there is a spike in the switching process, whether the spike is within an acceptable range, whether the reverse recovery current of the reverse recovery diode is within the acceptable range, and the margin.

The two-pulse test is performed for 4 time periods, and fig. 4 is a schematic diagram of test results of the test display module, where Vge is a voltage on T1, vce is a voltage on T2, and Ic is a current on L in fig. 4.

One) the control signal is used for double pulse of the driving signal, so that a double pulse is obtained at the T2 grid electrode of the IGBT to be tested, a high level is given at the time T0, the T2 of the IGBT to be tested is saturated and conducted, the voltage U of the high-voltage numerical control direct current power supply Vd is applied to two ends of the load L, the current on the inductor L rises linearly, and the current is I1=UT/L. At time T1, U, L, the current level is determined by the time period T1 (t1=t1-T0), which can be customized.

Second), the control signal drives an off signal to the IGBT so that the T2 grid electrode of the IGBT to be tested receives the off signal, and at the moment, the current on the load L is freewheeled by the diode, and the inductance current is gradually reduced.

Third), a control signal drives a second high level to the IGBT at the time T2, so that the gate of the IGBT to be tested obtains a high level for the second time, the T2 of the IGBT to be tested is conducted again, the freewheeling diode works in reverse recovery, the reverse recovery current is the T2 of the IGBT to be tested, and in the process, the current peak is the reverse recovery current of the diode, and the current should be considered and observed with emphasis. This current directly affects the performance index during the commutation process.

Fourth, at time t3, the second pulse of the double pulse ending test is ended, the IGBT is turned off, at this time, the current is large, the loop stray inductance exists in the turn-off process, and voltage is superimposed on the direct current bus, because the stray inductance Ls exists, a certain voltage spike can be generated at the turn-off time of the IGBT, the voltage spike in the turn-off process needs to be observed in a key way, the larger the voltage spike is, the greater the risk in practical application is, so that whether the voltage spike is in a reasonable range is controlled, and meanwhile, voltage and current exist after the turn-off at this time, and attention is paid to whether unsuitable oscillation exists.

4 physical quantities in the double pulse test:

1. the voltage U of the high-voltage numerical control direct-current power supply Vd; 2. load current I of the IGBT; 3. inductance L; 4. pulse width T.

The first time of opening is T1, the second time of opening is T2, and the second time of opening is T3.

The relation calculation method comprises the following steps: i=u×t/L;

examples: taking 450A1700V IGBT as an example, the following calculation is performed:

1. u takes the rated voltage of IGBT and takes 1000V;

2. taking IGBT safe working current I1=300A;

3. l is the experimental inductance 150UH;

4. the pulse time calculated from the above data is set to t1=45 μs, and the test value T2 is about 10 μs; (calculation formula t=il/U)

If the second pulse current i2=500a, calculate the second pulse width t3=30μs (calculation formula t3= (I2-I1) ×l/U) _。

The following describes the double pulse test, which involves the IGBT switching parameters.

Typically, the parameters of the IGBT are known by the datasheet, but the parameters described in the datasheet are tested under specific parameter conditions, which cannot be used directly. Therefore, the switching characteristics of the IGBT can be tested by giving two pulses through a double pulse test, so that the switching time of the IGBT can be more accurately carried out on the device performance, and the following parameters are involved:

ton, trd (on), tr, toff, tfd (off), tf, (di/dt) on, on loss Eon, off loss Eoff.

ton: turn-On time. trd (on): turn-On delay time is turned On for a delay time.

tr: rise time of Rise time.

toff: turn-Off time. tfd (off): turn-Off delay time.

tf: fall time of Fall time.

(di/dt) on: turn-On current slope, on current (waveform) slope in A/μs.

tr, tf and trd (on), tfd (off) are not too different in value, but tr, tf are time periods in which the collector current variation range is relatively large, so that the influence on the performance of the IGBT is relatively large, and it is more practical to measure the switching speed of the IGBT by using them. To limit (di/dt) on, this is typically achieved by adjusting the gate resistance Rg. The switching time is significantly affected by the gate current Ig, which in turn is significantly affected by the gate resistance Rg, so Rg has a significant effect on the switching time. An increase in Rg will lengthen other switching parameters in addition to tf, which will have the overall effect of lengthening the switching time and increasing switching losses. Therefore, to limit the switching time, rg can be increased appropriately; however, an excessive increase in Rg reduces the applicable power frequency of the IGBT, and also increases the consumption of gate drive power. In general, rg is generally not more than 100deg.C, and the larger the current specification is, the smaller the value of Rg is. The larger Rg, the larger the on time, the off time, the on loss, and the off loss.

The parameter readings are described below with reference to fig. 5-6.

As shown in fig. 5, the turn-on parameters are described as follows:

on delay time trd (on): 0.1V _ge To 0.1I _cm The time required;

rise time tr:0.1I _cm Rising to 0.9I _cm The time required;

on time ton=trd (on) +tr:0.1V _ge To 0.9I _cm The time required;

the on current slope di/dt:0.5I _cm To 0.9I _cm ；

Time of turn-on loss t _Eon ：0.1I _cm To 0.1V _ce Is a time of (a) to be used.

The formula of the opening loss:

as shown in fig. 6, the shutdown parameters are described as follows:

off-delay time tfd (off): 0.9V _ge The time required to reach 0.9 Icm;

fall time tf:0.9I _cm To 0.1I _cm The time required;

off time toff=tfd (off) +tf:0.9V _ge To 0.1I _cm The time required;

time of turn-off loss t _EOFF Time required for 0.1Vce to 0.1 Icm.

The turn-off loss formula:

the embodiment of the utility model also provides an IGBT double-pulse test system, referring to a modularized structure schematic diagram of the IGBT double-pulse test system shown in fig. 7, the IGBT double-pulse test system comprises the IGBT double-pulse test device 10 and an upper computer 20; the upper computer 20 is connected with the double pulse generator 100, and the upper computer 20 is used for controlling the double pulse generator 100 to send pulse control signals to the IGBT to be tested.

For ease of understanding, the test flow of the IGBT double pulse test system is described below with reference to fig. 8. As shown in fig. 8, after the high-voltage digital control direct current power supply is adjusted to a required voltage, the high-voltage switch is turned on, at the moment, a red light is operated to prompt lighting (prompt that the high-voltage digital control direct current power supply is started), then the high-voltage capacitor is charged, and the high-voltage digital control direct current power supply is connected to an IGBT to be tested through a direct current busbar; the control signal of the upper tube (such as a first switching tube T1) of the IGBT to be tested is connected with minus 15V, the lower tube (such as a second switching tube T2) of the IGBT to be tested is connected with a double pulse generator, and the IGBT to be tested is also connected with a reactor system (such as a reactor L) and a heating system (such as a temperature controller 400); the double pulse width algorithm is input to an operating system and an operating interface of an upper computer, and the upper computer controls a double pulse generator to send a double pulse control signal to a lower pipe of the IGBT to be tested, so that double pulse test is performed; after the test is finished, the high-voltage switch is disconnected, the high-voltage capacitor is used for discharging, and a green light indicator lamp is operated to light after the discharging is finished; the oscilloscope display unit performs reading operation after discharging to obtain a test result, wherein each parameter respectively tests reading: rise and fall delays, times, losses, etc.

For ease of understanding, a double pulse test algorithm of the IGBT double pulse test system is described below with reference to fig. 9. As shown in fig. 9, the double pulse width algorithm determines a first pulse time by the formula t=i1×l/U, determines a second pulse time by the formula t= (I2-I1) ×l/U, and inputs the first pulse time and the second pulse time to the operating system and the operating interface, so as to control the double pulse generator to send a double pulse control signal to the IGBT to be tested, and performs a double pulse test; at the end of the first pulse, a reading is made, the inductor current is reduced, and the diode begins to freewheel; after the start of the second pulse, a reading is made, noting the current spike, i.e. the reverse recovery current of the freewheeling diode (i.e. the reverse recovery current), at which time the reading comprises: ton, trd (on), tr, eon; after the second pulse is over, a reading is taken, which due to stray inductance is present, at which point a voltage spike is noted, at which point the reading includes: toff, tfd (off), tf, eoff; and the oscilloscope display unit reads after the discharge is completed, and the magnitude of the inductive current is measured.

The implementation principle and the generated technical effects of the IGBT double-pulse test system provided in this embodiment are the same as those of the above-mentioned IGBT double-pulse test device, and for the sake of brief description, reference may be made to corresponding contents in the above-mentioned IGBT double-pulse test device embodiments where the embodiment of the IGBT double-pulse test system is not mentioned.

It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.

In addition, in the description of embodiments of the present utility model, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.

In the description of the present utility model, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the utility model.

Claims (10)

1. The IGBT double-pulse testing device is characterized by comprising a double-pulse generator, a high-voltage numerical control direct current power supply, a reactor and a temperature controller;

the double pulse generator is connected with the IGBT to be tested and is used for sending pulse control signals to the IGBT to be tested;

the high-voltage numerical control direct current power supply and the reactor are respectively connected with the IGBT to be tested;

the temperature controller comprises a heating plate, a heating main control board, a cooling device and a temperature processing module, wherein a first temperature sensor and a second temperature sensor are respectively arranged on the heating plate and the cooling device; the heating plate is of an integrated heating structure, the upper surface of the heating plate is used for placing the IGBT to be tested, and the heating main control board is used for controlling the working state of the heating plate; the cooling device is used for cooling the temperature of the heating plate; the temperature processing module is respectively connected with the first temperature sensor, the second temperature sensor, the heating main control board and the cooling device, and is used for acquiring temperature data detected by the first temperature sensor and the second temperature sensor and issuing a temperature regulation instruction to the heating main control board and/or the cooling device.

2. The IGBT double pulse testing device of claim 1 wherein the cooling device comprises a cooling plate disposed below the heating plate.

3. The IGBT double pulse testing device of claim 1 further comprising a housing, wherein the double pulse generator, the high voltage digitally controlled dc power supply, the reactor, the heating master control board, and the temperature processing module are all located in the housing, and wherein the heating plate and the cooling device are all located above the housing.

4. The IGBT double pulse testing device according to claim 3, wherein the outer surface of the housing is further provided with a temperature setting module, and the temperature setting module is connected to the temperature processing module.

5. The IGBT double pulse testing device of claim 4 wherein the temperature setting module comprises a temperature adjustment knob or a temperature adjustment display.

6. The IGBT double pulse testing device according to claim 1, wherein the high voltage digital control dc power supply has high voltage capacitors connected in parallel at both ends.

7. The IGBT double pulse testing device according to claim 1, further comprising a test display module connected to the IGBT under test, the test display module being configured to read and display test data of the IGBT under test.

8. The IGBT double pulse testing device according to claim 1, further comprising a heating display module connected to the heating main control board, the heating display module being configured to display a voltage, a current, and a power when the heating plate is heated.

9. The IGBT double pulse testing device according to claim 1, wherein the high voltage digitally controlled dc power supply is connected to the IGBT under test via a high voltage switch, and the IGBT double pulse testing device further comprises an indicator lamp connected to the high voltage switch, the indicator lamp being configured to indicate an operating state of the IGBT double pulse testing device.

10. An IGBT double pulse test system, characterized by comprising the IGBT double pulse test device according to any one of claims 1 to 9, and further comprising an upper computer;

the upper computer is connected with the double pulse generator and is used for controlling the double pulse generator to send pulse control signals to the IGBT to be tested.