CN219842983U - Power semiconductor module components and vehicles - Google Patents

Abstract

The utility model provides a power semiconductor module assembly and a vehicle, which relate to the technical field of power semiconductors. The power semiconductor module assembly includes: a first substrate and a second substrate arranged relatively spaced apart; A chipset connected to a first substrate and a second substrate; a first heat dissipation plate and a second heat dissipation plate. The first heat dissipation plate is attached to a side of the first substrate facing away from the second substrate, and the second heat dissipation plate is attached to a side of the first base plate facing away from the second substrate. On the side of the two substrates facing away from the first substrate, the first heat dissipation plate and the second heat dissipation plate are respectively provided with liquid flow channels, and the liquid flow channels are configured for the flow of heat exchange working fluid to take away the heat of the chipset. The utility model also provides a vehicle. The power semiconductor module assembly and vehicle provided by the utility model solve the problem of slow heat dissipation speed of the power semiconductor module in the prior art, and improve the heat dissipation efficiency of the power semiconductor module assembly.

Description

Power semiconductor module components and vehicles

Technical field

The utility model relates to the technical field of power semiconductors, specifically, to a power semiconductor module assembly and a vehicle.

Background technique

Power semiconductor device is a commonly used device in integrated circuits. During its operation, the chip of the power semiconductor device will generate a large amount of heat. Therefore, the power semiconductor device needs to be cooled. The traditional cooling method is to cool down the power semiconductor device above and below it. A water channel is set up on the heat sink, and thermal silica gel is set between the water channel and the upper and lower heat sink plates. The coolant flowing in the water channel exchanges heat with the upper and lower heat sink plates through the thermal conductive silica gel to achieve the purpose of heat dissipation. However, this heat dissipation method The heat dissipation effect is poor and the heat dissipation efficiency is slow. Therefore, a new power semiconductor module is urgently needed to solve at least one of the above problems.

Utility model content

The purpose of the embodiment of the present utility model is to solve the problem of slow heat dissipation speed of power semiconductor modules in the prior art, and to propose a power semiconductor module assembly and a vehicle.

In order to achieve the above object, the present utility model provides a power semiconductor module assembly, which includes:

a first substrate and a second substrate arranged relatively spaced apart;

a chipset disposed between the first substrate and the second substrate and connected to the first substrate and the second substrate;

A first heat dissipation plate and a second heat dissipation plate. The first heat dissipation plate is attached to the side of the first substrate facing away from the second base plate. The second heat dissipation plate is attached to the second base plate. On the side facing away from the first substrate, the first heat dissipation plate and the second heat dissipation plate are respectively provided with liquid flow channels, and the liquid flow channels are configured to allow heat exchange working fluid to flow to take away the chip. group of calories.

Specifically, the chipset includes: a first chip and a second chip. The first chip is disposed on the first substrate and is electrically connected to the second substrate through a first buffer layer. The second chip is disposed on the first substrate. The second substrate is electrically connected to the first substrate through a second buffer layer.

In some embodiments, the drain electrode of the first chip and the drain electrode of the second chip face the first substrate and the second substrate respectively.

Specifically, the first substrate includes a first chip substrate and a first heat dissipation base plate that are closely arranged, and the second substrate includes a second chip substrate and a second heat dissipation base plate that are closely arranged; the chipset is disposed on the between the first chip substrate and the second chip substrate, the first heat dissipation base plate is disposed between the first chip substrate and the first heat dissipation plate, and the second heat dissipation base plate is disposed between the first heat dissipation base plate and the first heat dissipation plate. Between the two chip substrates and the second heat dissipation plate, at least one of the first heat dissipation base plate and the second heat dissipation base plate is provided with a heat dissipation pin, and the heat dissipation pin extends into the liquid flow channel.

Specifically, the liquid flow channel of the first heat dissipation plate and the liquid flow channel of the second heat dissipation plate are connected through a communication channel.

Specifically, the power semiconductor module assembly further includes: a blocking side plate connected to the first heat dissipation plate and the second heat dissipation plate for blocking the first heat dissipation plate and the second heat dissipation plate. One end port of the liquid flow channel of the second heat dissipation plate.

Specifically, the liquid flow channel of the first heat sink plate has a first inlet and outlet and a second inlet and outlet, the liquid flow channel of the second heat sink plate has a third inlet and outlet and a fourth inlet and outlet, and the blocking side The plate is used to block the second inlet and outlet and the fourth inlet and outlet. The heat exchange medium enters from the first inlet and outlet, flows through the communication channel, and flows out from the third inlet and outlet.

Specifically, the liquid flow channel of the first heat sink plate includes: an upper cooling groove opened on a side of the first heat sink plate that is in contact with the first substrate, and an upper cooling groove located on both sides of the upper cooling groove and connected with the upper cooling groove. The first through hole section and the second through hole section are connected by the groove;

The first inlet and outlet and the second inlet and outlet are the openings of the first through hole section and the second through hole section respectively;

The heat dissipation pins on the first substrate extend into the upper cooling groove through the notches of the upper cooling groove.

Specifically, the second heat dissipation plate liquid flow channel includes: a lower cooling groove opened on a side of the second heat dissipation plate that is in contact with the second substrate, and a lower cooling groove located on both sides of the lower cooling groove and connected to the lower cooling groove. The third through hole section and the fourth through hole section are connected;

The third inlet and outlet and the fourth inlet and outlet are the openings of the third through hole section and the fourth through hole section respectively;

The heat dissipation pins on the second substrate extend into the lower cooling groove through the notches of the lower cooling groove.

Specifically, the power semiconductor module assembly further includes: a first connector and a second connector;

The first joint is provided with a first general inlet and outlet, and the second joint is provided with a second general inlet and outlet;

The first general inlet and outlet of the first joint can communicate with the liquid flow channel of the first heat sink plate and one end port of the liquid flow channel of the second heat sink plate;

The second general inlet and outlet of the second joint can communicate with the liquid flow channel of the first heat dissipation plate and the other end port of the liquid flow channel of the second heat dissipation plate.

The utility model also provides a vehicle, which includes the above-mentioned power semiconductor module assembly.

In the power semiconductor module assembly provided by the utility model, the chipset is arranged between the first substrate and the second substrate and is electrically connected to the first substrate and the second substrate. The first heat dissipation plate is arranged close to the first substrate, and the second heat dissipation plate The plate is arranged to fit the second substrate, and a liquid flow channel is provided on both the first heat sink plate and the second heat sink plate. The heat exchange medium can flow in the liquid flow channel, and the heat generated during the operation of the chipset is conducted to the first substrate. and the second substrate, the heat exchange working fluid flowing in the liquid flow channels of the first heat sink and the second heat sink that are attached to the first substrate and the second substrate is carried away and conducted to the first substrate and the second substrate. of heat, thereby achieving the purpose of cooling the chipset. This heat exchange medium flows in the liquid channel to take away the heat generated by the chipset, speeding up the connection between the chipset and the first substrate through the first substrate and the second substrate. The heat conduction efficiency of the heat dissipation plate and the second heat dissipation plate enables the chipset to dissipate heat quickly, thereby increasing the heat dissipation speed of the core power semiconductor module assembly. The utility model also provides a vehicle. The power semiconductor module assembly and vehicle provided by the utility model solve the problem of slow heat dissipation speed of the power semiconductor module in the prior art, and improve the heat dissipation efficiency of the power semiconductor module assembly.

Other features and advantages of the embodiments of the present invention will be described in detail in the following detailed description.

Description of the drawings

The drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the description. Together with the following specific embodiments, they are used to explain the embodiments of the present invention, but do not constitute a limitation to the embodiments of the present invention. In the attached picture:

Figure 1 is a schematic exploded structural diagram of a power semiconductor module assembly provided by an embodiment of the present invention;

Figure 2 is a schematic diagram of the assembly structure of Figure 1;

Figure 3 is a cross-sectional view of a power semiconductor module assembly provided by an embodiment of the present invention;

Figure 4 is a bottom view of the first heat dissipation plate in the power semiconductor module assembly provided by the present invention;

Figure 5 is a left view of the power semiconductor module assembly of Figure 2 without a blocking side plate installed;

Figure 6 is a cross-sectional view of a power semiconductor module assembly provided by another embodiment of the present invention;

Figure 7 is a schematic diagram of the assembly structure of Figure 6.

Explanation of reference signs

1-First heat sink; 2-Second heat sink; 4-Contact channel; 5-Blocking side plate; 6-First joint; 7-Second joint; 8-Contact sealing groove; 11-First inlet and outlet ; 12-second inlet and outlet; 13-upper cooling groove; 14-first through hole section; 15-second through hole section; 16-upper sealing ring groove; 17-first sealing ring groove; 21-third Inlet and outlet; 22-fourth inlet and outlet; 23-lower cooling groove; 24-third through hole section; 25-fourth through hole section; 26-lower sealing ring groove; 27-second sealing ring groove; 31- The first substrate; 32-the second substrate; 33-the heat dissipation pin; 61-the first general inlet and outlet; 71-the second general inlet and outlet.

Detailed ways

Specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

In the embodiments of the present invention, unless otherwise stated, the directional words used such as "up, down, top, and bottom" usually refer to the direction shown in the drawings or refer to the vertical or vertical direction. Or words used to describe the mutual positional relationship of various components in the direction of gravity.

Figure 1 is a schematic exploded structure diagram of the power semiconductor module assembly; Figure 2 is a schematic assembly structure diagram of Figure 1; Figure 3 is a cross-sectional view of the power semiconductor module assembly; Figure 4 is a bottom view of the first heat dissipation plate in the power semiconductor module assembly; Figure 5 It is a left view of the power semiconductor module assembly without the blocking side plate installed; Figure 6 is a cross-sectional view of another power semiconductor module assembly, and Figure 7 is a schematic diagram of the assembly structure of Figure 6.

As shown in Figures 1 to 7, the present utility model provides a power semiconductor module assembly, which includes:

The first substrate 31 and the second substrate 32 are relatively spaced apart;

a chipset 3 disposed between the first substrate 31 and the second substrate 32 and connected to the first substrate 31 and the second substrate 32;

The first heat dissipation plate 1 and the second heat dissipation plate 2. The first heat dissipation plate 1 is disposed on the side of the first substrate 31 facing away from the second substrate 32. The second heat dissipation plate 2 is disposed in contact with each other. On the side of the second substrate 32 facing away from the first substrate 31 , the first heat dissipation plate 1 and the second heat dissipation plate 2 are respectively provided with liquid flow channels, and the liquid flow channels are configured for replacement. The thermal working fluid flows to take away the heat of the chipset 3 .

In the power semiconductor module assembly provided by the present invention, the chipset 3 is arranged between the first substrate 31 and the second substrate 32 and is electrically connected to the first substrate 31 and the second substrate 32. The chipset 3 will generate heat during operation. And conducted to the first substrate 31 and the second substrate 32. In order to cool down the chipset 3, a first heat sink 1 and a second heat sink 2 are respectively provided to fit the first substrate 31 and the second substrate 32, as shown in Figure 3 As shown, the first heat dissipation plate 1 and the second heat dissipation plate 2 are connected. By connecting the first heat dissipation plate 1 and the second heat dissipation plate 2, the first base plate 31 and the second base plate 32 can be better fixed, and the first base plate 31 and the second base plate 32 can be better fixed. The number of chipsets 3 between the second substrates 32 is not limited here, and can be set according to actual needs. Liquid flow channels are opened on the first heat sink 31 and the second heat sink 32 to pass into the liquid flow channels. Enter the heat exchange working fluid, which may be, for example, but not limited to, refrigerant or water. The heat exchange working fluid flows in the liquid flow channel. The heat exchange working fluid exchanges heat with the first substrate 31 and the second substrate 32 to bring about The chipset 3 generates and conducts heat to the first substrate 31 and the second substrate 32 to achieve the purpose of cooling the chipset 3. In this way, by directly setting a heat sink with a liquid flow channel on the back of the substrate, the chip The heat generated by group 3 is directly transferred to the heat sink through the substrate. The heat exchange medium flowing in the liquid channel takes away the heat conducted to the first substrate 31 and the second substrate 32. This can speed up the cooling of the chipset 3. , improve the heat dissipation efficiency of power semiconductor module components, and solve the problem of slow heat dissipation speed of power semiconductor modules in the existing technology.

In one embodiment, as shown in FIGS. 3 and 6 , the chipset 3 includes: a first chip and a second chip. The first chip is disposed on the first substrate 31 and connected to the first buffer layer through a first buffer layer. The second substrate 32 is electrically connected, and the second chip is disposed on the second substrate 32 and electrically connected to the first substrate 31 through a second buffer layer.

Specifically, a metal layer is formed on the surface of the first substrate 31, and the first chip is disposed on the metal layer of the first substrate 31 to achieve electrical connection with the first chip. A metal layer is formed on the surface of the second substrate 32 , and the second chip is disposed on the metal layer of the second substrate 32 to achieve electrical connection with the second substrate 32 .

In a specific embodiment, the first substrate 31 includes a first chip substrate 311 and a first heat dissipation bottom plate 312 arranged in close contact with each other, and the second substrate 32 includes a second chip substrate 321 and a second heat dissipation bottom plate 322; the chipset 3 is configured Between the first chip substrate 311 and the second chip substrate 321, the first heat dissipation bottom plate 312 is located between the first chip substrate 311 and the first heat dissipation plate 1, and the second heat dissipation bottom plate 322 is located between the second chip substrate 321 and the second heat dissipation plate 1. Between the plates 2, at least one of the first heat dissipation bottom plate 312 and the second heat dissipation bottom plate 322 is provided with heat dissipation pins 33, and the heat dissipation pins 33 extend into the liquid flow channel.

The heat dissipation pins 33 provided on the first heat dissipation bottom plate 312 can extend into the liquid flow channel of the first heat dissipation plate 1 that is arranged closely with the first heat dissipation bottom plate 312 , and the heat dissipation pins 33 provided on the second heat dissipation bottom plate 322 can extend into the liquid flow channel of the first heat dissipation bottom plate 312 . When the heat exchanger enters the liquid flow channel of the second heat dissipation plate 2 and is arranged in close contact with the second heat dissipation bottom plate 322, the heat generated by the chipset 3 is simultaneously conducted to the heat dissipation pins 33. The heat exchange working fluid interacts with the heat dissipation needles during the flow in the liquid flow channel. 33 are in direct contact with each other for heat exchange. The cross-section of the heat dissipation pin 33 is an oblate oval, which has the advantages of large heat dissipation area and small flow resistance. The flowing heat exchange medium can take away the heat conducted to the heat dissipation pin 33 faster and speed up the process. improve the heat dissipation speed of power semiconductor module components.

For example, the first chip substrate 311 and the second chip substrate 321 may be DBC boards. The DBC board includes a ceramic layer and a metal-clad layer disposed on two corresponding surfaces of the ceramic layer. The metal-clad layer on one side of the DBC board is in contact with the first heat dissipation layer. The bottom plate 311 or the second heat dissipation bottom plate 322 is arranged to fit together. The other metal-clad layer of the DBC board is arranged to fit the first chip or the second chip. The metal-clad layer can be made of metal copper with good heat dissipation performance and high conductivity, or a ceramic layer. Materials such as silicon nitride, aluminum oxide, and aluminum nitride can be selected. However, considering the thermal expansion coefficient, thermal conductivity, and material strength, silicon nitride is the preferred choice for the ceramic layer. The first chip and the second chip are attached by welding. The first buffer layer is welded to the first chip on one side and the second substrate 32 on the other side. The second buffer layer is welded to the second chip on one side and welded to the first substrate 31 on the other side.

In order to flexibly lay out the chipset 3 between the first substrate 31 and the second substrate 32 and improve the heat dissipation efficiency of the chipset 3 , the drain electrode of the first chip and the drain electrode of the second chip face the first chip respectively. substrate 31 and the second substrate 32 . The drain of the first chip disposed on the first substrate 31 is disposed toward the second substrate 32, and the drain of the second chip disposed on the second substrate 32 is disposed toward the first substrate 31. In this way, the first chip and the second chip are disposed toward the first substrate 31. The drain of the chip is set separately to facilitate heat dissipation of the chipset 3.

In one embodiment, as shown in FIG. 3 , the liquid flow channel of the first heat dissipation plate 1 and the liquid flow channel of the second heat dissipation plate 2 are connected through the communication channel 4 . The power semiconductor module assembly also includes: a blocking side plate 5, which is connected to the first heat dissipation plate 1 and the second heat dissipation plate 2 and is used to block the first heat dissipation plate. 1 and one end port of the liquid flow channel of the second heat sink 2. The liquid flow channel of the first heat sink 1 has a first inlet and outlet 11 and a second inlet and outlet 12, and the liquid flow channel of the second heat sink 2 has a third inlet and outlet 21 and a fourth inlet and outlet 22. The blocking side plate 5 is used to block the second inlet and outlet 12 and the fourth inlet and outlet 22. The heat exchange medium enters from the first inlet and outlet 11, flows through the communication channel 4, and exits from the third inlet and outlet. Inlet and outlet 21 flows out. The communication channel 4 can connect the liquid flow channel on the first heat dissipation plate 1 and the liquid flow channel on the second heat dissipation plate 2. In this way, when the chip set 3 is dissipated, the heat exchange medium enters the first inlet and outlet 11 from the first inlet and outlet 11. A liquid flow channel of the first heat sink 1 flows in the liquid flow channel of the first heat sink 1 and heat exchanges with the heat dissipation needle 33 extending into the liquid flow channel. The heat exchange medium flows through the liquid flow of the first heat sink 1 The flow channel then enters the liquid flow channel of the second heat dissipation plate 2 through the communication channel 4, and heat exchange occurs with the heat dissipation needle 33 in the liquid flow channel of the second heat dissipation plate 2. The heat exchange working fluid entering from the first inlet and outlet 11 finally After flowing out through the third inlet and outlet 21, the second inlet and outlet 12 and the fourth inlet and outlet 22 can be blocked simultaneously by the blocking side plate 5. At the same time, the first heat dissipation plate 1 and the fourth inlet and outlet 22 can be strengthened by blocking the side plate 5. The connection between the two heat sink plates 2.

In order to prevent the heat exchange working fluid from leaking from between the blocking side plate 5 and the second inlet and outlet 12 and the fourth inlet and outlet 22, the first heat sink 1 has a surface surrounding the second inlet and outlet 12 on the side facing the blocking side plate 5. The first sealing ring groove 17 and the second sealing ring groove 27 are formed on the side of the second heat dissipation plate 2 facing the blocking side plate 5 and surrounding the fourth inlet and outlet 22. Between the first sealing ring groove 17 and the second sealing ring groove 27 An annular sealing ring is provided inside each of them to prevent leakage between the second inlet and outlet 12 of the first heat dissipation plate 1 and the fourth inlet and outlet 22 of the second heat dissipation plate 2 and the blocking side plate.

The liquid flow channel of the first heat sink 1 includes: an upper cooling groove 13 opened on the side of the first heat sink 1 that is in contact with the first substrate 31 , and an upper cooling groove 13 located on both sides of the upper cooling groove 13 and connected with the upper cooling groove 13 . The first through hole section 14 and the second through hole section 15 connected by the cooling groove 13;

The first inlet and outlet 11 and the second inlet and outlet 12 are the openings of the first through hole section 14 and the second through hole section 15 respectively;

The heat dissipation pins 33 on the first substrate 31 extend into the upper cooling groove 13 through the slots of the upper cooling groove 13 .

The liquid flow channel of the second heat sink 2 includes: a lower cooling groove 23 opened on the side of the second heat sink 2 that is in contact with the second substrate 32, and a lower cooling groove 23 located on both sides of the lower cooling groove 23 and connected with the lower cooling groove 23. The third through hole section 24 and the fourth through hole section 25 are connected by the groove 23;

The third inlet and outlet 21 and the fourth inlet and outlet 22 are the openings of the third through hole section 24 and the fourth through hole section 25 respectively;

The heat dissipation pins 33 on the second substrate 32 extend into the lower cooling groove 23 through the slots of the lower cooling groove 23 .

In order to enable the power semiconductor module assembly to better dissipate heat, as shown in Figures 3 and 4, the upper cooling groove 13 of the liquid flow channel of the first heat dissipation plate 1 is opened on the first heat dissipation plate 1 facing the first substrate 31. On one side, the first through hole section 14 and the second through hole section 15 are disposed on corresponding sides of the upper cooling groove 13 and communicate with the upper cooling groove 13. The first through hole section 14 and the second through hole section 15 are through holes. hole, when the first heat dissipation plate 1 is placed close to the first substrate 31, the notch of the upper cooling groove 13 is tightly engaged with the first substrate 31, so that a gap is formed between the upper cooling groove 13 and the first substrate 31. Upper seal chamber. The heat exchange medium enters the first through hole section 14 of the liquid flow channel through the first inlet and outlet 11, flows through the first through hole section 14, and then enters the upper sealing cavity formed by the upper cooling groove 13 and the first substrate 31. The heat dissipation pins 33 of a base plate 31 extend into the upper cooling groove 13. In this way, the heat exchange working fluid enters the upper sealed cavity and directly contacts the heat dissipation pins 33 for heat exchange. At the same time, the heat exchange working fluid also interacts with the first base plate 31. Direct contact further accelerates the cooling speed of the chipset 3. A lower cooling groove 23 is opened on the side of the second heat sink 2 facing the second substrate 32, and the third through hole section 24 and the fourth through hole section 25 are arranged in the lower cooling groove 23. On the corresponding two sides of the groove 23, the third through hole section 24 and the fourth through hole section 25 are through holes. When the second heat dissipation plate 2 is mounted on the second substrate 32, the notch of the lower cooling groove 23 is tight. It is buckled on the second base plate 32 so that a lower sealing cavity is formed between the lower cooling groove 23 and the second base plate 32. The heat exchange medium enters the lower sealing cavity through the third through hole section 24 and directly extends into the lower cooling cavity. The heat dissipation pins 33 in the groove 23 are in contact with the second substrate 32, and the heat on the heat dissipation pins 33 and the second substrate 32 is directly taken away through the heat exchange medium, thereby cooling the chipset 3, as shown in Figure 3. Contact The channel 4 is arranged between the second through hole section 15 and the fourth through hole section 25, so that the heat exchange medium enters the liquid flow channel from the first inlet and outlet 11 provided on the first through hole section 14, and flows through the first through hole section 14. Through hole section 14, upper cooling groove 13, second through hole section 15, communication channel 4, fourth through hole section 25, lower cooling groove 23, third through hole section 24, and finally flows out from the third inlet and outlet 21 , the heat generated by the chipset 3 is taken away during the flow of the heat exchange working fluid.

The communication channel 4 is composed of an upper blind hole opened on the first heat sink 1 and a lower blind hole opened on the second heat sink 2. The upper blind hole is connected to the second through hole section 15, and the lower blind hole is connected to the fourth through hole. The hole sections 25 are connected, and the upper blind hole and the lower blind hole are connected to form a communication channel 4. In order to prevent the heat exchange working fluid flowing through the communication channel 4 from leaking at the joint between the first heat sink 1 and the second heat sink 2, such as As shown in Figure 4, an annular communication sealing groove 8 is opened around the upper blind hole of the first heat dissipation plate 1 to surround the upper blind hole. When the first heat dissipation plate 1 and the second heat dissipation plate 2 are connected, in the communication sealing groove 8 An annular sealing ring is provided to seal the junction of the upper blind hole and the lower blind hole to prevent the heat exchange working fluid flowing through the communication channel 4 from leaking.

When the opening end of the upper cooling groove 13 on the first heat sink 1 is fastened to the first base plate 31, in order to prevent the cooling liquid entering the upper cooling groove 13 from the notch of the upper cooling groove 13 and the first base plate 31 There is leakage in the gap between the first heat dissipation plate 1 and an upper sealing ring groove 16 surrounding the slot of the upper cooling groove 13. An annular sealing ring is provided in the upper sealing ring groove 16. The upper sealing ring groove 16 The upper cooling groove 13 is surrounded in the middle, and the annular sealing ring provided in the upper cooling groove 13 ensures that the first heat dissipation plate 1 can seal the notch of the upper cooling groove 13 and the first heat sink 1 when it is attached to the first substrate 21 . The gap between the base plates 31 prevents leakage of the heat exchange working fluid.

In order to prevent the heat exchange working fluid entering the lower cooling groove 23 from leaking from the gap between the notch of the lower cooling groove 23 and the second substrate 32 , the second heat sink 2 is provided with a groove surrounding the notch of the lower cooling groove 23 . The lower sealing ring groove 26 is provided with an annular sealing ring. The annular sealing ring fills the gap between the notch of the lower cooling groove 23 and the second substrate 32 to avoid leakage of the heat exchange working fluid.

In another embodiment, as shown in Figures 6-7, the power semiconductor module assembly further includes: a first connector 6 and a second connector 7;

The first joint 6 is provided with a first general inlet and outlet 61, and the second joint 7 is provided with a second general inlet and outlet 71;

The first general inlet and outlet 61 of the first joint 6 can communicate with the liquid flow channel of the first heat sink 1 and one end port of the liquid flow channel of the second heat sink 2;

The second general inlet and outlet of the second joint 7 can communicate with the liquid flow channel of the first heat dissipation plate 1 and the other end port of the liquid flow channel of the second heat dissipation plate 2 .

As shown in Figures 6 and 7, the first joint 6 and the second joint 7 are respectively provided at both ends of the first heat sink 1 and the second heat sink 2 and are connected to the first heat sink 1 and the second heat sink 2. The first general inlet and outlet 61 of the first joint 6 is connected to the first inlet and outlet 11 and the third inlet and outlet 21 at the same time, and the second general inlet and outlet 71 of the second joint 7 is connected to the second inlet and outlet 12 and the fourth inlet and outlet at the same time. The outlets 22 are connected, so that the heat exchange working fluid enters from the first main inlet and outlet 61, and simultaneously enters the liquid flow channel of the first heat sink 1 and the liquid flow of the second heat sink 2 through the first inlet and outlet 11 and the third inlet and outlet 21. channel, the heat exchange working fluid flows through the upper cooling groove 13 and the lower cooling groove 23 respectively, and then is collected into the second general inlet and outlet 71 through the corresponding second inlet and outlet 12 and the fourth inlet and outlet 22 for discharge. In this way, the heat exchange The working fluid flows through the liquid flow channel of the first heat sink 1 and the liquid flow channel of the second heat sink 2 at the same time, making the heat exchange working fluid flow faster, speeding up the heat dissipation speed of the power chipset 3, and benefiting the power semiconductor module. Components cool down quickly.

As shown in Figure 6, in order to avoid the leakage of the heat exchange medium at the connection between the first joint 6 and the second joint 7 and the first heat sink 1 and the second heat sink 2, the first joint 6 and the third A sealing ring is provided between an inlet and outlet 11 and the third inlet and outlet 21 , and a sealing ring is provided between the second joint 7 and the second inlet and outlet 12 and the fourth inlet and outlet 22 . Annular inlet and outlet sealing rings are respectively provided on the open end surfaces of the first inlet and outlet 11 and the second inlet and outlet 12 of the first heat sink 1 and the third inlet and outlet 21 and the fourth inlet and outlet 22 of the second heat sink 2. groove, when the first joint 6 and the second joint 7 are connected to the first heat dissipation plate 1 and the second heat dissipation plate 2, a sealing ring is provided in each inlet and outlet sealing ring groove, thereby playing a sealing role and preventing heat exchange work. occurrence of quality leakage.

The utility model also provides a vehicle, which includes the above-mentioned power semiconductor module assembly.

In the power semiconductor module assembly provided by the utility model, the chipset is arranged between the first substrate and the second substrate and is electrically connected to the first substrate and the second substrate. The first heat dissipation plate is arranged close to the first substrate, and the second heat dissipation plate The plate is arranged to fit the second substrate, and a liquid flow channel is provided on both the first heat sink plate and the second heat sink plate. The heat exchange medium can flow in the liquid flow channel, and the heat generated during the operation of the chipset is conducted to the first substrate. and the second substrate, the heat exchange working fluid flowing in the liquid flow channels of the first heat sink and the second heat sink that are attached to the first substrate and the second substrate is carried away and conducted to the first substrate and the second substrate. of heat, thereby achieving the purpose of cooling the chipset. This heat exchange medium flows in the liquid channel to take away the heat generated by the chipset, speeding up the connection between the chipset and the first substrate through the first substrate and the second substrate. The heat conduction efficiency of the heat dissipation plate and the second heat dissipation plate enables the chipset to dissipate heat quickly, thereby increasing the heat dissipation speed of the core power semiconductor module assembly. The utility model also provides a vehicle. The power semiconductor module assembly and vehicle provided by the utility model solve the problem of slow heat dissipation speed of the power semiconductor module in the prior art, and improve the heat dissipation efficiency of the power semiconductor module assembly.

The preferred embodiments of the present utility model have been described in detail above with reference to the accompanying drawings. However, the present utility model is not limited to the specific details in the above-mentioned embodiments. Within the scope of the technical concept of the present utility model, many technical solutions of the present utility model can be carried out. These simple modifications all belong to the protection scope of the present utility model.

In addition, it should be noted that each of the specific technical features described in the above-mentioned specific embodiments can be combined in any suitable manner without conflict. In order to avoid unnecessary repetition, the present utility model combines various possible The combination method will not be further explained.

Those skilled in the art can understand that all or part of the steps in the method for implementing the above embodiments can be completed by instructing relevant hardware through a program. The program is stored in a storage medium and includes several instructions to cause the microcontroller, chip or processor to A processor executes all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program code. .

In addition, any combination of different embodiments of the present invention can also be carried out. As long as they do not violate the idea of the embodiments of the present invention, they should also be regarded as the contents disclosed in the embodiments of the present invention.

Claims (11)

1. A power semiconductor module assembly, the power semiconductor module assembly comprising:

a first substrate (31) and a second substrate (32) disposed at a distance from each other;

a chip set (3) disposed between the first substrate (31) and the second substrate (32) and connected to the first substrate (31) and the second substrate (32);

first heating panel (1) and second heating panel (2), first heating panel (1) laminating sets up first base plate (31) are dorsad the one side of second base plate (32), second heating panel (2) laminating sets up second base plate (32) are dorsad the one side of first base plate (31), liquid runner has been seted up respectively on first heating panel (1) with second heating panel (2), liquid runner is configured to supply heat exchange medium to flow in order to take away the heat of chipset (3).

2. The power semiconductor module assembly according to claim 1, characterized in that the chipset (3) comprises: the first chip is arranged on the first substrate (31) and is electrically connected with the second substrate (32) through a first buffer layer, and the second chip is arranged on the second substrate (32) and is electrically connected with the first substrate (31) through a second buffer layer.

3. The power semiconductor module assembly according to claim 2, wherein the drain of the first chip and the drain of the second chip are directed towards the first substrate (31) and the second substrate (32), respectively.

4. The power semiconductor module assembly according to claim 1, wherein the first substrate (31) comprises a first chip substrate (311) and a first heat dissipation base plate (312) that are bonded together, and the second substrate (32) comprises a second chip substrate (321) and a second heat dissipation base plate (322) that are bonded together; the chip set (3) is arranged between the first chip substrate (311) and the second chip substrate (321), the first radiating bottom plate (312) is arranged between the first chip substrate (311) and the first radiating plate (1), the second radiating bottom plate is arranged between the second chip substrate (321) and the second radiating plate (2), at least one of the first radiating bottom plate (312) and the second radiating bottom plate (322) is provided with radiating pins (33), and the radiating pins (33) extend into the liquid flow channel.

5. The power semiconductor module assembly according to claim 1, characterized in that the liquid flow channels of the first heat dissipation plate (1) and the second heat dissipation plate (2) are in communication via a communication channel (4).

6. The power semiconductor module assembly of claim 5, further comprising: the sealing side plate (5), sealing side plate (5) with first heating panel (1) with second heating panel (2) are connected, are used for sealing off first heating panel (1) with the one end port of the liquid runner of second heating panel (2).

7. The power semiconductor module assembly according to claim 6, wherein the liquid flow channel of the first heat dissipation plate (1) is provided with a first inlet and outlet (11) and a second inlet and outlet (12), the liquid flow channel of the second heat dissipation plate (2) is provided with a third inlet and outlet (21) and a fourth inlet and outlet (22), the plugging side plate (5) is used for plugging the second inlet and outlet (12) and the fourth inlet and outlet (22), and heat exchange working medium enters from the first inlet and outlet (11), flows through the communication channel (4) and flows out from the third inlet and outlet (21).

8. The power semiconductor module assembly according to claim 7, characterized in that the liquid flow channel of the first heat dissipation plate (1) comprises: an upper cooling groove (13) formed on one surface of the first heat dissipation plate (1) attached to the first substrate (31), and a first through hole section (14) and a second through hole section (15) which are positioned on two sides of the upper cooling groove (13) and are communicated with the upper cooling groove (13);

the first inlet and outlet (11) and the second inlet and outlet (12) are respectively the orifices of a first through hole section (14) and a second through hole section (15);

the radiating pins (33) on the first substrate (31) extend into the upper cooling grooves (13) through the notches of the upper cooling grooves (13).

9. The power semiconductor module assembly according to claim 7, wherein the second heat dissipation plate (2) liquid flow channel comprises: a lower cooling groove (23) arranged on one surface of the second substrate (32) attached to the second heat dissipation plate (2), and a third through hole section (24) and a fourth through hole section (25) which are positioned on two sides of the lower cooling groove (23) and are communicated with the lower cooling groove (23);

the third inlet and outlet (21) and the fourth inlet and outlet (22) are respectively orifices of a third through hole section (24) and a fourth through hole section (25);

the radiating pins (33) on the second substrate (32) extend into the lower cooling grooves (23) through the notches of the lower cooling grooves (23).

10. The power semiconductor module assembly of claim 1, further comprising: a first joint (6) and a second joint (7);

a first total inlet and outlet (61) is formed in the first joint (6), and a second total inlet and outlet (71) is formed in the second joint (7);

a first total inlet and outlet (61) of the first connector (6) can be communicated with one end port of a liquid flow channel of the first heat radiation plate (1) and one end port of a liquid flow channel of the second heat radiation plate (2);

the second total inlet and outlet of the second connector (7) can be communicated with the liquid flow channel of the first heat dissipation plate (1) and the other end port of the liquid flow channel of the second heat dissipation plate (2).

11. A vehicle, characterized in that it comprises a power semiconductor module assembly according to any one of claims 1-10.