CN219842983U - Power semiconductor module assembly and vehicle - Google Patents

Abstract

The utility model provides a power semiconductor module assembly and a vehicle, and relates to the technical field of power semiconductors, wherein the power semiconductor module assembly comprises: the first substrate and the second substrate are arranged at intervals; a chip set disposed between and connected to the first and second substrates; the first radiating plate and the second radiating plate are arranged on one surface of the first substrate, which is opposite to the second substrate, the second radiating plate is arranged on one surface of the second substrate, which is opposite to the first substrate, liquid flow channels are respectively arranged on the first radiating plate and the second radiating plate, and the liquid flow channels are configured to enable heat exchange working medium to flow so as to take away heat of the chip set. The utility model further provides a vehicle. The power semiconductor module assembly and the vehicle provided by the utility model solve the problem of low heat dissipation speed of the power semiconductor module in the prior art, and improve the heat dissipation efficiency of the power semiconductor module assembly.

Description

Power semiconductor module assembly and vehicle

Technical Field

The utility model relates to the technical field of power semiconductors, in particular to a power semiconductor module assembly and a vehicle.

Background

The power semiconductor device is a common device in an integrated circuit, and a chip of the power semiconductor device generates a large amount of heat in the working process, so that the power semiconductor device needs to be cooled, a water channel is arranged on an upper radiating plate and a lower radiating plate of the power semiconductor device in a traditional cooling mode, heat conducting silica gel is arranged between the water channel and the upper radiating plate and between the water channel and the lower radiating plate, and cooling liquid flowing in the water channel exchanges heat with the upper radiating plate and the lower radiating plate through the heat conducting silica gel so as to achieve the purpose of heat dissipation, but the heat dissipation effect of the heat dissipation mode is poor and the heat dissipation efficiency is low, and therefore, a new power semiconductor module is needed to solve at least one problem.

Disclosure of Invention

The utility model aims to solve the problem that a power semiconductor module in the prior art is low in heat dissipation speed, and provides a power semiconductor module assembly and a vehicle.

In order to achieve the above object, the present utility model provides a power semiconductor module assembly including:

the first substrate and the second substrate are arranged at intervals;

a chipset disposed between and connected to the first and second substrates;

the first radiating plate and the second radiating plate are arranged on one surface of the first substrate, which faces away from the second substrate, the second radiating plate is arranged on one surface of the second substrate, which faces away from the first substrate, liquid flow channels are respectively formed in the first radiating plate and the second radiating plate and are configured to flow heat exchange working media so as to take away heat of the chip set.

Specifically, the chipset includes: the first chip is arranged on the first substrate and is electrically connected with the second substrate through the first buffer layer, and the second chip is arranged on the second substrate and is electrically connected with the first substrate through the second buffer layer.

In some embodiments, the drain of the first chip and the drain of the second chip are oriented toward the first substrate and the second substrate, respectively.

Specifically, the first substrate comprises a first chip substrate and a first heat dissipation bottom plate which are arranged in a bonding mode, and the second substrate comprises a second chip substrate and a second heat dissipation bottom plate which are arranged in a bonding mode; the chip set is arranged between the first chip substrate and the second chip substrate, the first heat dissipation bottom plate is arranged between the first chip substrate and the first heat dissipation plate, the second heat dissipation bottom plate is arranged between the second chip substrate and the second heat dissipation plate, at least one of the first heat dissipation bottom plate and the second heat dissipation bottom plate is provided with a heat dissipation needle, and the heat dissipation needle stretches into the liquid flow channel.

Specifically, the liquid flow channel of the first heat dissipation plate is communicated with the liquid flow channel of the second heat dissipation plate through a communication channel.

Specifically, the power semiconductor module assembly further includes: the plugging side plate is connected with the first heat dissipation plate and the second heat dissipation plate and is used for plugging one end port of a liquid flow channel of the first heat dissipation plate and one end port of a liquid flow channel of the second heat dissipation plate.

The liquid flow channel of the first heat dissipation plate is provided with a first inlet and a second inlet and a third inlet and a fourth inlet, the plugging side plate is used for plugging the second inlet and the fourth inlet, and heat exchange working medium enters from the first inlet and the second inlet, flows through the communication channel and flows out from the third inlet and the third outlet.

Specifically, the liquid flow channel of the first heat dissipation plate includes: an upper cooling groove formed on one surface of the first heat dissipation plate, which is attached to the first substrate, and a first through hole section and a second through hole section which are positioned on two sides of the upper cooling groove and are communicated with the upper cooling groove;

the first inlet and the second inlet are orifices of a first through hole section and a second through hole section respectively;

the heat dissipation needle on the first substrate stretches into the upper cooling groove through the notch of the upper cooling groove.

Specifically, the second heat dissipation plate liquid flow path includes: a lower cooling groove formed on one surface of the second heat dissipation plate, which is attached to the second substrate, and a third through hole section and a fourth through hole section which are positioned on two sides of the lower cooling groove and are communicated with the lower cooling groove;

the third inlet and the fourth inlet are orifices of a third through hole section and a fourth through hole section respectively;

and the radiating pins on the second substrate extend into the lower cooling grooves through the notches of the lower cooling grooves.

Specifically, the power semiconductor module assembly further includes: a first joint and a second joint;

the first joint is provided with a first total inlet and outlet, and the second joint is provided with a second total inlet and outlet;

the first total inlet and outlet of the first connector can be communicated with one end port of the liquid flow channel of the first heat dissipation plate and one end port of the liquid flow channel of the second heat dissipation plate;

the second total inlet and outlet of the second connector can be communicated with the liquid flow channel of the first heat dissipation plate and the other end port of the liquid flow channel of the second heat dissipation plate.

The utility model further provides a vehicle comprising the power semiconductor module assembly.

The power semiconductor module assembly provided by the utility model has the advantages that the chip group is arranged between the first substrate and the second substrate and is in conductive connection with the first substrate and the second substrate, the first heat-radiating plate is arranged in a manner of being bonded with the first substrate, the second heat-radiating plate is arranged in a manner of being bonded with the second substrate, the first heat-radiating plate and the second heat-radiating plate are both provided with liquid flow passages, heat generated in the working process of the chip group can flow in the liquid flow passages, and after the heat generated in the working process of the chip group is conducted to the first substrate and the second substrate, the heat conducted to the first substrate and the second substrate is taken away by the heat-exchanging working medium flowing in the liquid flow passages of the first heat-radiating plate and the second heat-radiating plate which are bonded with the first substrate and the second substrate, so that the heat generated by the chip group is taken away in the liquid flow passages, the heat conduction efficiency of the chip group through the first substrate and the second substrate and the first heat-radiating plate and the second heat-radiating plate is accelerated, and the heat dissipation speed of the chip group is increased. The utility model further provides a vehicle. The power semiconductor module assembly and the vehicle provided by the utility model solve the problem of low heat dissipation speed of the power semiconductor module in the prior art, and improve the heat dissipation efficiency of the power semiconductor module assembly.

Additional features and advantages of embodiments of the utility model will be set forth in the detailed description which follows.

Drawings

The accompanying drawings are included to provide a further understanding of embodiments of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain, without limitation, the embodiments of the utility model. In the drawings:

fig. 1 is a schematic view of an exploded structure of a power semiconductor module assembly according to an embodiment of the present utility model;

FIG. 2 is a schematic view of the assembled structure of FIG. 1;

fig. 3 is a cross-sectional view of a power semiconductor module assembly provided by an embodiment of the present utility model;

fig. 4 is a bottom view of a first heat dissipating plate in the power semiconductor module assembly provided by the present utility model;

fig. 5 is a left side view of the assembly of the power semiconductor module of fig. 2 without a plugging side plate mounted thereto;

fig. 6 is a cross-sectional view of a power semiconductor module assembly provided by another embodiment of the present utility model;

fig. 7 is a schematic view of the assembled structure of fig. 6.

Description of the reference numerals

1-a first heat dissipation plate; 2-a second heat dissipation plate; 4-a communication channel; 5-plugging the side plate; 6-a first linker; 7-a second linker; 8-connecting a seal groove; 11-a first access port; 12-a second port; 13-upper cooling grooves; 14-a first via segment; 15-a second through hole section; 16-upper sealing ring groove; 17-a first sealing ring groove; 21-a third port; 22-a fourth access port; 23-lower cooling grooves; 24-a third through-hole section; 25-a fourth port section; 26-lower seal ring groove; 27-a second sealing ring groove; 31-a first substrate; 32-a second substrate; 33-heat dissipation pins; 61-a first main inlet and outlet; 71-a second main inlet and outlet.

Detailed Description

The following describes specific embodiments of the present utility model in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the utility model, are not intended to limit the utility model.

In the embodiments of the present utility model, unless otherwise indicated, terms of orientation such as "upper, lower, top, bottom" are used generally with respect to the orientation shown in the drawings or with respect to the positional relationship of the various components with respect to one another in the vertical, vertical or gravitational directions.

FIG. 1 is a schematic diagram of an exploded construction of a power semiconductor module assembly; fig. 2 is a schematic view of the assembled structure of fig. 1, and fig. 3 is a cross-sectional view of the power semiconductor module assembly; fig. 4 is a bottom view of a first heat dissipating plate in the power semiconductor module assembly; fig. 5 is a left side view of the power semiconductor module assembly without the plugging side plates installed; fig. 6 is a cross-sectional view of another power semiconductor module assembly, and fig. 7 is a schematic view of the assembled structure of fig. 6.

As shown in fig. 1 to 7, the present utility model provides a power semiconductor module assembly including:

a first substrate 31 and a second substrate 32 disposed at an opposite interval;

a chipset 3 disposed between the first substrate 31 and the second substrate 32 and connected to the first substrate 31 and the second substrate 32;

the first heat dissipation plate 1 and the second heat dissipation plate 2, the first heat dissipation plate 1 is attached to the first substrate 31 and is opposite to one surface of the second substrate 32, the second heat dissipation plate 2 is attached to the second substrate 32 and is opposite to one surface of the first substrate 31, liquid flow channels are respectively formed in the first heat dissipation plate 1 and the second heat dissipation plate 2, and the liquid flow channels are configured to enable heat exchange working media to flow so as to take away heat of the chip set 3.

The power semiconductor module assembly provided by the utility model is characterized in that the chip set 3 is arranged between the first substrate 31 and the second substrate 32 and is in conduction connection with the first substrate 31 and the second substrate 32, the chip set 3 generates heat during operation and is conducted to the first substrate 31 and the second substrate 32, the first heat dissipation plate 1 and the second heat dissipation plate 2 are respectively attached to the first substrate 31 and the second substrate 32 for cooling the chip set 3, as shown in fig. 3, the first heat dissipation plate 1 and the second heat dissipation plate 2 are connected, the first substrate 31 and the second substrate 32 can be better fixed through the connection of the first heat dissipation plate 1 and the second heat dissipation plate 2, the chip set 3 arranged between the first substrate 31 and the second substrate 32, the quantity of the chip set 3 is not limited, the chip set 3 is particularly arranged according to the actual requirement, a liquid flow channel is formed on the first substrate 31 and the second substrate 32, a heat exchange working medium, for example, but not limited by refrigerant or water flows in the liquid flow channel, the heat exchange working medium exchanges heat with the first substrate 31 and the second substrate 32, the chip set is taken away from the chip set to the first substrate 31 and the second substrate 32, the heat exchange medium is taken away from the chip set 3, the heat exchange medium can be directly conducted to the second substrate 31 and the chip set 3, the heat exchange medium can be directly cooled by the semiconductor module is cooled by the chip set, the semiconductor module is cooled by the semiconductor module assembly, and the heat is cooled by the chip set is cooled by the semiconductor module, and the semiconductor module is cooled by the chip set, the heat is cooled by the semiconductor module, and the chip set is cooled by the semiconductor module, the heat is cooled by the chip set is cooled, and the semiconductor module is cooled, and the heat is cooled by the semiconductor module, and the heat is cooled by the heat and the heat is cooled.

In one embodiment, as shown in fig. 3 and 6, the chipset 3 includes: the first chip is arranged on the first substrate 31 and is electrically connected with the second substrate 32 through a first buffer layer, and the second chip is arranged on the second substrate 32 and is electrically connected with the first substrate 31 through a second buffer layer.

Specifically, a metal layer is formed on the surface of the first substrate 31, and the first chip is disposed on the metal layer of the first substrate 31 to realize electrical connection with the first chip. The second substrate 32 has a metal layer formed on a surface thereof, and the second chip is disposed on the metal layer of the second substrate 32 to electrically connect with the second substrate 32.

In a specific embodiment, the first substrate 31 includes a first chip substrate 311 and a first heat dissipation base plate 312 that are disposed in a bonded manner, and the second substrate 32 includes a second chip substrate 321 and a second heat dissipation base plate 322; the chipset 3 is disposed between the first chip substrate 311 and the second chip substrate 321, the first heat dissipation base plate 312 is disposed between the first chip substrate 311 and the first heat dissipation plate 1, the second heat dissipation base plate 322 is disposed between the second chip substrate 321 and the second heat dissipation plate 2, at least one of the first heat dissipation base plate 312 and the second heat dissipation base plate 322 is provided with heat dissipation pins 33, and the heat dissipation pins 33 extend into the liquid flow channels.

The heat dissipation needle 33 arranged on the first heat dissipation bottom plate 312 can extend into the liquid flow channel of the first heat dissipation plate 1 attached to the first heat dissipation bottom plate 312, the heat dissipation needle 33 arranged on the second heat dissipation bottom plate 322 can extend into the liquid flow channel of the second heat dissipation plate 2 attached to the second heat dissipation bottom plate 322, heat generated by the chip set 3 is simultaneously conducted to the heat dissipation needle 33, heat exchange is carried out between the heat exchange working medium and the heat dissipation needle 33 in the flowing process of the liquid flow channel in a direct contact manner, the cross section of the heat dissipation needle 33 is flat elliptic, the heat dissipation needle 33 has the advantages of large heat dissipation area and small flow resistance, and heat conducted to the heat dissipation needle 33 can be taken away more quickly through the flowing heat exchange working medium, so that the heat dissipation speed of the power semiconductor module assembly is accelerated.

For example, the first chip substrate 311 and the second chip substrate 321 may be DBC boards, where the DBC boards include a ceramic layer and a metal-clad layer attached to two corresponding surfaces of the ceramic layer, where the metal-clad layer on one surface of the DBC board is attached to the first heat dissipation substrate 311 or the second heat dissipation substrate 322, the other metal-clad layer of the DBC board is attached to the first chip or the second chip, the metal-clad layer may be made of copper metal with good heat dissipation performance and high conductivity, the ceramic layer may be made of silicon nitride, aluminum oxide, aluminum nitride, or other materials, but considering the characteristics of thermal expansion coefficient, thermal conductivity, and material strength, the ceramic layer is preferably made of silicon nitride, the first chip and the second chip are attached to the metal-clad layer by soldering, one surface of the first buffer layer is soldered to the first chip, the other surface is soldered to the second substrate 32, one surface of the second buffer layer is soldered to the second chip, and the other surface is soldered to the first substrate 31.

In order to flexibly layout the chip set 3 between the first substrate 31 and the second substrate 32 and to improve the heat dissipation efficiency of the chip set 3, the drain electrode of the first chip and the drain electrode of the second chip face the first substrate 31 and the second substrate 32, respectively. The drain electrode of the first chip disposed on the first substrate 31 is disposed toward the second substrate 32, and the drain electrode of the second chip disposed on the second substrate 32 is disposed toward the first substrate 31, so that the drain electrodes of the first chip and the second chip are separately disposed, which is beneficial to heat dissipation of the chipset 3.

In one embodiment, as shown in fig. 3, the liquid flow channel of the first heat dissipation plate 1 and the liquid flow channel of the second heat dissipation plate 2 are communicated through a communication channel 4. The power semiconductor module assembly further includes: and the plugging side plate 5 is connected with the first heat dissipation plate 1 and the second heat dissipation plate 2 and is used for plugging one end port of a liquid flow channel of the first heat dissipation plate 1 and the second heat dissipation plate 2. The liquid flow channel of the first heat dissipation plate 1 is provided with a first inlet and outlet 11 and a second inlet and outlet 12, the liquid flow channel of the second heat dissipation plate 2 is provided with a third inlet and outlet 21 and a fourth inlet and outlet 22, the plugging side plate 5 is used for plugging the second inlet and outlet 12 and the fourth inlet and outlet 22, and heat exchange working medium enters from the first inlet and outlet 11, flows through the communication channel 4 and flows out from the third inlet and outlet 21. The communication channel 4 can be used for communicating the liquid flow channel on the first heat dissipation plate 1 with the liquid flow channel on the second heat dissipation plate 2, so that when the chip set 3 dissipates heat, a heat exchange working medium enters the liquid flow channel of the first heat dissipation plate 1 from the first inlet and outlet 11, flows in the liquid flow channel of the first heat dissipation plate 1 to exchange heat with the heat dissipation needle 33 extending into the liquid flow channel, enters the liquid flow channel of the second heat dissipation plate 2 through the communication channel 4 after flowing through the liquid flow channel of the first heat dissipation plate 1, exchanges heat with the heat dissipation needle 33 in the liquid flow channel of the second heat dissipation plate 2, finally flows out from the first inlet and outlet 11 through the third inlet and outlet 21, and simultaneously, the second inlet and outlet 12 and the fourth inlet and outlet 22 can be blocked through the blocking side plate 5.

In order to avoid leakage of heat exchange working media between the plugging side plate 5 and the second inlet and outlet 12 and the fourth inlet and outlet 22, a first sealing ring groove 17 is formed on one surface of the first heat dissipation plate 1 facing the plugging side plate 5 and surrounds the second inlet and outlet 12, a second sealing ring groove 27 is formed on one surface of the second heat dissipation plate 2 facing the plugging side plate 5 and surrounds the fourth inlet and outlet 22, annular sealing rings are arranged in the first sealing ring groove 17 and the second sealing ring groove 27, and sealing is performed through the annular sealing rings so as to avoid leakage between the second inlet and outlet 12 of the first heat dissipation plate 1 and the fourth inlet and outlet 22 of the second heat dissipation plate 2 and the plugging side plate.

The liquid flow path of the first heat dissipation plate 1 includes: an upper cooling groove 13 formed on one surface of the first heat dissipation plate 1, which is attached to the first substrate 31, and a first through hole section 14 and a second through hole section 15 which are positioned on both sides of the upper cooling groove 13 and are communicated with the upper cooling groove 13;

the first inlet and outlet 11 and the second inlet and outlet 12 are respectively the orifices of a first through hole section 14 and a second through hole section 15;

the heat dissipation pins 33 on the first substrate 31 extend into the upper cooling grooves 13 through the notches of the upper cooling grooves 13.

The second heat dissipation plate 2 liquid flow channel comprises: a lower cooling groove 23 formed on one surface of the second heat dissipation plate 2, which is attached to the second substrate 32, and a third through hole section 24 and a fourth through hole section 25 which are positioned at both sides of the lower cooling groove 23 and are communicated with the lower cooling groove 23;

the third inlet and outlet 21 and the fourth inlet and outlet 22 are respectively the orifices of a third through hole section 24 and a fourth through hole section 25;

the heat dissipation pins 33 on the second substrate 32 extend into the lower cooling grooves 23 through the notches of the lower cooling grooves 23.

In order to enable the power semiconductor module assembly to dissipate heat better, as shown in fig. 3 and 4, the upper cooling groove 13 of the liquid flow channel of the first heat dissipation plate 1 is formed on one surface of the first heat dissipation plate 1, which is arranged towards the first substrate 31, the first through hole section 14 and the second through hole section 15 are arranged on two sides corresponding to the upper cooling groove 13 and are communicated with the upper cooling groove 13, the first through hole section 14 and the second through hole section 15 are through holes, and when the first heat dissipation plate 1 is attached to the first substrate 31, the notch of the upper cooling groove 13 is tightly buckled on the first substrate 31, so that an upper sealing cavity is formed between the upper cooling groove 13 and the first substrate 31. The heat exchange working medium enters the first through hole section 14 of the liquid flow channel through the first inlet and outlet 11, flows through the first through hole section 14 and then enters the upper sealing cavity formed by the upper cooling groove 13 and the first substrate 31, the heat radiation needle 33 of the first substrate 31 stretches into the upper cooling groove 13, thus, the heat exchange working medium enters the upper sealing cavity and directly contacts with the heat radiation needle 33 to exchange heat, meanwhile, the heat exchange working medium is also directly contacted with the first substrate 31, the cooling speed of the chip set 3 is further accelerated, the lower cooling groove 23 is arranged on one surface of the second heat radiation plate 2 facing the second substrate 32, the third through hole section 24 and the fourth through hole section 25 are arranged on the corresponding two sides of the lower cooling groove 23, the third through hole section 24 and the fourth through hole section 25 are through holes, when the second heat radiation plate 2 is attached to the second substrate 32, the notch of the lower cooling groove 23 is tightly buckled on the second substrate 32, the lower sealing cavity is formed between the lower cooling groove 23 and the second substrate 32, the heat exchange working medium directly contacts the heat dissipation needle 33 extending into the lower cooling groove 23 and the second substrate 32 after entering the lower sealing cavity through the third through hole section 24, heat on the heat dissipation needle 33 and the second substrate 32 is directly taken away by the heat exchange working medium, so that the temperature of the chip set 3 is lowered, as shown in fig. 3, the communication channel 4 is arranged between the second through hole section 15 and the fourth through hole section 25, so that the heat exchange working medium enters the liquid flow channel from the first inlet and outlet 11 arranged on the first through hole section 14, flows through the first through hole section 14, the upper cooling groove 13, the second through hole section 15, the communication channel 4, the fourth through hole section 25, the lower cooling groove 23 and the third through hole section 24, finally flows out from the third inlet and outlet 21, and the heat generated by the chip set 3 is taken away in the flowing process of the heat exchange working medium.

The communication channel 4 is formed by an upper blind hole formed in the first heat dissipation plate 1 and a lower blind hole formed in the second heat dissipation plate 2, the upper blind hole is communicated with the second through hole 15, the lower blind hole is communicated with the fourth through hole 25, the upper blind hole is communicated with the lower blind hole to form the communication channel 4, in order to avoid the heat exchange working medium flowing through the communication channel 4 from leaking at the joint of the first heat dissipation plate 1 and the second heat dissipation plate 2, as shown in fig. 4, an annular communication sealing groove 8 is formed in the orifice of the upper blind hole surrounding the first heat dissipation plate 1 to surround the upper blind hole, and an annular sealing ring is arranged in the communication sealing groove 8 when the first heat dissipation plate 1 is connected with the second heat dissipation plate 2, so that the joint of the upper blind hole and the lower blind hole is sealed, and the heat exchange working medium flowing through the communication channel 4 is prevented from leaking.

When the open end lock of last cooling groove 13 on the first heating panel 1 sets up at first base plate 31, in order to avoid getting into the clearance leakage between the notch of last cooling groove 13 and the first base plate 31 of cooling liquid of last cooling groove 13, on the first heating panel 1 around last cooling groove 13's notch has seted up last seal ring groove 16, sets up ring seal in last seal ring groove 16, and last seal ring groove 16 surrounds last cooling groove 13 in the centre, ensures through the ring seal who sets up in last cooling groove 13 that first heating panel 1 can seal the clearance between notch and the first base plate 31 of last cooling groove 13 when laminating with first base plate 21, avoids heat transfer working medium to leak.

In order to avoid the heat exchange medium entering the lower cooling groove 23 from leaking from the gap between the notch of the lower cooling groove 23 and the second substrate 32, a lower sealing ring groove 26 is formed on the second heat dissipation plate 2 around the notch of the lower cooling groove 23, an annular sealing ring is arranged in the lower sealing ring groove 26, and the gap between the notch of the lower cooling groove 23 and the second substrate 32 is filled by the annular sealing ring, so that the heat exchange medium is prevented from leaking.

In another embodiment, as shown in fig. 6 to 7, the power semiconductor module assembly further includes: a first joint 6 and a second joint 7;

the first joint 6 is provided with a first total inlet and outlet 61, and the second joint 7 is provided with a second total inlet and outlet 71;

the first total inlet and outlet 61 of the first joint 6 can be communicated with one end port of the liquid flow channel of the first heat dissipation plate 1 and one end port of the liquid flow channel of the second heat dissipation plate 2;

the second main inlet and outlet of the second connector 7 can be communicated with the liquid flow channel of the first heat dissipation plate 1 and the other end port of the liquid flow channel of the second heat dissipation plate 2.

As shown in fig. 6 and 7, the first joint 6 and the second joint 7 are respectively arranged at two ends of the first heat dissipation plate 1 and the second heat dissipation plate 2 and are connected with the first heat dissipation plate 1 and the second heat dissipation plate 2, the first total inlet and outlet 61 of the first joint 6 is simultaneously communicated with the first inlet and outlet 11 and the third inlet and outlet 21, the second total inlet and outlet 71 of the second joint 7 is simultaneously communicated with the second inlet and outlet 12 and the fourth inlet and outlet 22, so that a heat exchange working medium enters from the first total inlet and outlet 61, enters the liquid flow channel of the first heat dissipation plate 1 and the liquid flow channel of the second heat dissipation plate 2 through the first inlet and outlet 11 and the third inlet and outlet 21, and the heat exchange working medium is collected to the second total inlet and outlet 71 through the corresponding second inlet and outlet 12 and the fourth inlet and outlet 22 after flowing through the upper cooling groove 13 and the lower cooling groove 23 respectively, so that the heat exchange working medium simultaneously flows through the liquid flow channel of the first heat dissipation plate 1 and the liquid flow channel of the second heat dissipation plate 2, thereby the flow speed of the heat exchange working medium is faster, the heat dissipation speed of the power chip set 3 is increased, and the power semiconductor module assembly is cooled fast.

As shown in fig. 6, in order to avoid leakage of the heat exchange medium at the connection between the first joint 6 and the second joint 7 and the first heat dissipation plate 1 and the second heat dissipation plate 2, a sealing ring is disposed between the first joint 6 and the first inlet/outlet 11 and between the second joint 7 and the third inlet/outlet 21, and a sealing ring is disposed between the second joint 7 and the second inlet/outlet 12 and between the second joint 7 and the fourth inlet/outlet 22. Annular inlet and outlet sealing ring grooves are respectively arranged on the end faces of the opening ends of the first inlet and outlet 11 and the second inlet and outlet 12 on the first heat radiation plate 1, the third inlet and outlet 21 and the fourth inlet and outlet 22 of the second heat radiation plate 2, and sealing rings are arranged in the sealing ring grooves of each inlet and outlet when the first joint 6 and the second joint 7 are connected with the first heat radiation plate 1 and the second heat radiation plate 2, so that the sealing effect is achieved, and the occurrence of heat exchange working medium leakage is prevented.

The utility model further provides a vehicle comprising the power semiconductor module assembly.

The power semiconductor module assembly provided by the utility model has the advantages that the chip group is arranged between the first substrate and the second substrate and is in conductive connection with the first substrate and the second substrate, the first heat-radiating plate is arranged in a manner of being bonded with the first substrate, the second heat-radiating plate is arranged in a manner of being bonded with the second substrate, the first heat-radiating plate and the second heat-radiating plate are both provided with liquid flow passages, heat generated in the working process of the chip group can flow in the liquid flow passages, and after the heat generated in the working process of the chip group is conducted to the first substrate and the second substrate, the heat conducted to the first substrate and the second substrate is taken away by the heat-exchanging working medium flowing in the liquid flow passages of the first heat-radiating plate and the second heat-radiating plate which are bonded with the first substrate and the second substrate, so that the heat generated by the chip group is taken away in the liquid flow passages, the heat conduction efficiency of the chip group through the first substrate and the second substrate and the first heat-radiating plate and the second heat-radiating plate is accelerated, and the heat dissipation speed of the chip group is increased. The utility model further provides a vehicle. The power semiconductor module assembly and the vehicle provided by the utility model solve the problem of low heat dissipation speed of the power semiconductor module in the prior art, and improve the heat dissipation efficiency of the power semiconductor module assembly.

The preferred embodiments of the present utility model have been described in detail above with reference to the accompanying drawings, but the present utility model is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present utility model within the scope of the technical concept of the present utility model, and all the simple modifications belong to the protection scope of the present utility model.

In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.

Those skilled in the art will appreciate that all or part of the steps in a method for implementing the above embodiments may be implemented by a program stored in a storage medium, where the program includes several instructions for causing a single-chip microcomputer, chip or processor (processor) to perform all or part of the steps in a method according to the embodiments of the utility model. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.

In addition, any combination of the various embodiments of the present utility model may be made, so long as it does not deviate from the idea of the embodiments of the present utility model, and it should also be regarded as what is disclosed in the embodiments of the present utility model.

Claims (11)

1. A power semiconductor module assembly, the power semiconductor module assembly comprising:

a first substrate (31) and a second substrate (32) disposed at a distance from each other;

a chip set (3) disposed between the first substrate (31) and the second substrate (32) and connected to the first substrate (31) and the second substrate (32);

first heating panel (1) and second heating panel (2), first heating panel (1) laminating sets up first base plate (31) are dorsad the one side of second base plate (32), second heating panel (2) laminating sets up second base plate (32) are dorsad the one side of first base plate (31), liquid runner has been seted up respectively on first heating panel (1) with second heating panel (2), liquid runner is configured to supply heat exchange medium to flow in order to take away the heat of chipset (3).

2. The power semiconductor module assembly according to claim 1, characterized in that the chipset (3) comprises: the first chip is arranged on the first substrate (31) and is electrically connected with the second substrate (32) through a first buffer layer, and the second chip is arranged on the second substrate (32) and is electrically connected with the first substrate (31) through a second buffer layer.

3. The power semiconductor module assembly according to claim 2, wherein the drain of the first chip and the drain of the second chip are directed towards the first substrate (31) and the second substrate (32), respectively.

4. The power semiconductor module assembly according to claim 1, wherein the first substrate (31) comprises a first chip substrate (311) and a first heat dissipation base plate (312) that are bonded together, and the second substrate (32) comprises a second chip substrate (321) and a second heat dissipation base plate (322) that are bonded together; the chip set (3) is arranged between the first chip substrate (311) and the second chip substrate (321), the first radiating bottom plate (312) is arranged between the first chip substrate (311) and the first radiating plate (1), the second radiating bottom plate is arranged between the second chip substrate (321) and the second radiating plate (2), at least one of the first radiating bottom plate (312) and the second radiating bottom plate (322) is provided with radiating pins (33), and the radiating pins (33) extend into the liquid flow channel.

5. The power semiconductor module assembly according to claim 1, characterized in that the liquid flow channels of the first heat dissipation plate (1) and the second heat dissipation plate (2) are in communication via a communication channel (4).

6. The power semiconductor module assembly of claim 5, further comprising: the sealing side plate (5), sealing side plate (5) with first heating panel (1) with second heating panel (2) are connected, are used for sealing off first heating panel (1) with the one end port of the liquid runner of second heating panel (2).

7. The power semiconductor module assembly according to claim 6, wherein the liquid flow channel of the first heat dissipation plate (1) is provided with a first inlet and outlet (11) and a second inlet and outlet (12), the liquid flow channel of the second heat dissipation plate (2) is provided with a third inlet and outlet (21) and a fourth inlet and outlet (22), the plugging side plate (5) is used for plugging the second inlet and outlet (12) and the fourth inlet and outlet (22), and heat exchange working medium enters from the first inlet and outlet (11), flows through the communication channel (4) and flows out from the third inlet and outlet (21).

8. The power semiconductor module assembly according to claim 7, characterized in that the liquid flow channel of the first heat dissipation plate (1) comprises: an upper cooling groove (13) formed on one surface of the first heat dissipation plate (1) attached to the first substrate (31), and a first through hole section (14) and a second through hole section (15) which are positioned on two sides of the upper cooling groove (13) and are communicated with the upper cooling groove (13);

the first inlet and outlet (11) and the second inlet and outlet (12) are respectively the orifices of a first through hole section (14) and a second through hole section (15);

the radiating pins (33) on the first substrate (31) extend into the upper cooling grooves (13) through the notches of the upper cooling grooves (13).

9. The power semiconductor module assembly according to claim 7, wherein the second heat dissipation plate (2) liquid flow channel comprises: a lower cooling groove (23) arranged on one surface of the second substrate (32) attached to the second heat dissipation plate (2), and a third through hole section (24) and a fourth through hole section (25) which are positioned on two sides of the lower cooling groove (23) and are communicated with the lower cooling groove (23);

the third inlet and outlet (21) and the fourth inlet and outlet (22) are respectively orifices of a third through hole section (24) and a fourth through hole section (25);

the radiating pins (33) on the second substrate (32) extend into the lower cooling grooves (23) through the notches of the lower cooling grooves (23).

10. The power semiconductor module assembly of claim 1, further comprising: a first joint (6) and a second joint (7);

a first total inlet and outlet (61) is formed in the first joint (6), and a second total inlet and outlet (71) is formed in the second joint (7);

a first total inlet and outlet (61) of the first connector (6) can be communicated with one end port of a liquid flow channel of the first heat radiation plate (1) and one end port of a liquid flow channel of the second heat radiation plate (2);

the second total inlet and outlet of the second connector (7) can be communicated with the liquid flow channel of the first heat dissipation plate (1) and the other end port of the liquid flow channel of the second heat dissipation plate (2).

11. A vehicle, characterized in that it comprises a power semiconductor module assembly according to any one of claims 1-10.