CN219800854U

CN219800854U - Short-circuit emitter structure of thyristor

Info

Publication number: CN219800854U
Application number: CN202320782399.8U
Authority: CN
Inventors: 邱玉石; 杨胜国; 纪伟
Original assignee: Fuxin Feiyu Electronic Technology Co ltd
Current assignee: Fuxin Feiyu Electronic Technology Co ltd
Priority date: 2023-04-11
Filing date: 2023-04-11
Publication date: 2023-10-03
Anticipated expiration: 2033-04-11

Abstract

The utility model belongs to the technical field of electronic components, in particular to a short-circuit emitter structure of a thyristor, which aims at solving the problems that the turn-on time is prolonged and the transient forward voltage drop is high in the prior art, and provides the following scheme, which comprises a thyristor main body, a P1 conductive region and a P2 conductive region, wherein a highly doped P+ conductive layer is arranged on the outer surface of the P1 conductive region, and a highly doped N2 conductive layer is arranged on the outer surface of the P2 conductive region. Under the structural action of the contact electrode and the strip-shaped region, the utility model improves the off-state voltage rising rate of the thyristor main body, has no obvious change of the on time and the transient forward voltage drop, and has at least four regions with alternately opposite conductive types, including an external emission region and an internal region, wherein the external emission region is divided into a plurality of parts, the parts of the internal region extend to the outer surface of the emission region between the parts of the emission region, and the parts of the internal region are connected with each other and are strip-shaped to form a continuous geometric pattern.

Description

Short-circuit emitter structure of thyristor

Technical Field

The utility model relates to the technical field of electronic components, in particular to a short-circuit emitter structure of a thyristor.

Background

In low power pulse generators, thyristors are still in wide use due to their relatively high power capability. In addition to other dynamic characteristics, the off-state voltage rise rate dv/dt is also particularly important in practical use. When the pulse frequency is around 1KHZ, if the thyristor is charged forward with increased voltage, the thyristor in off state can also be opened below turning voltage, ignition is advanced, and the dv/dt triggering condition is not allowed. The dv/dt range of the traditional thyristor is 200V/mu s-700V/mu s, the range is difficult to meet higher application requirements, and the condition of uncontrolled ignition is very easy to occur.

The adoption of the short-circuit emitter structure is a common method for improving dv/dt tolerance, displacement current is bypassed by setting a short-circuit point, and the thyristor is not opened due to the displacement current, so that the dv/dt tolerance is improved, but the problem that the opening time is prolonged and the transient forward voltage drop is increased is also brought.

Disclosure of Invention

Aiming at the defects of the prior art, the utility model provides a short-circuit emitter structure of a thyristor, which overcomes the defects of the prior art and effectively solves the problems of long turn-on time and high transient forward voltage drop through the mutual matching of a contact electrode and a strip region.

In order to achieve the above purpose, the present utility model adopts the following technical scheme:

the utility model provides a short-circuit emitter structure of thyristor, includes thyristor main part, P1 conductive area and P2 conductive area, be provided with highly doped P+ conductive layer on the surface of P1 conductive area, and the surface of P2 conductive area is provided with highly doped N2 conductive layer, extend to and be provided with the strip district on the surface of N2 conductive layer between the N2 conductive layer, N2 conductive layer and strip district all contact has the contact electrode that forms the negative pole.

Preferably, the N2 conductive layers are isolated from each other by the interconnected long, narrow stripe-like regions of the P2 conductive regions.

Preferably, the thyristor body is provided in the form of a square surface and the control electrodes are arranged in recesses at the corners of the thyristor body.

Preferably, the strip-shaped areas are arranged in a tree structure, and the strip-shaped areas are emitted from opposite angles of the control electrode and extend to other areas in the direction of the control electrode in a symmetrical mode through a central trunk.

Preferably, an emitter region is arranged at one side of the thyristor main body, the area of the emitter region is 1200mm, and the emitter region is composed of a plurality of N2 conductive layers.

Preferably, the width of the central trunk stripe is 1.2mm, the width of the rest stripes is 0.8mm, and the total area of the stripe areas is 2.2% of the area of the emitter area.

The beneficial effects of the utility model are as follows:

1. according to the short-circuit emitter structure of the thyristor, the short-circuit emitter structure is adopted, so that the off-state voltage rising rate of the thyristor main body is improved under the structural action of the contact electrode and the strip-shaped region, and meanwhile, the opening time and the transient forward voltage drop are not obviously changed;

2. the short-circuit emitter structure of the thyristor has at least four regions with alternately opposite conductive types, and comprises an external emitter region and an internal region, wherein the external emitter region is divided into a plurality of parts, the parts of the internal region extend to the outer surface of the emitter region between the parts of the emitter region, and the parts of the internal region are mutually connected and are strip-shaped to form a continuous geometric pattern.

Drawings

FIG. 1 is a schematic diagram of a shorted emitter structure of a thyristor according to the present utility model;

fig. 2 is a schematic longitudinal structural diagram of a shorted emitter structure of a thyristor according to the present utility model;

fig. 3 is a schematic diagram of a conventional shorted emitter structure.

In the figure: 1. a control electrode; 2. a P2 conductive region; 3. an N2 conductive layer; 4. a contact electrode; 5. a strip-shaped region; 5-1, a central backbone; 6. a P1 conductive region; 7. and a P+ conductive layer.

Description of the embodiments

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments.

1-2, a shorted emitter structure of a thyristor includes a thyristor body, a P1 conductive region 6 and a P2 conductive region 2, wherein a highly doped P+ conductive layer 7 is disposed on an outer surface of the P1 conductive region 6, a highly doped N2 conductive layer 3 is disposed on an outer surface of the P2 conductive region 2, a strip region 5 is disposed on an outer surface extending to the N2 conductive layer 3 between the N2 conductive layers 3, and the N2 conductive layer 3 and the strip region 5 are both contacted with a contact electrode 4 forming a cathode:

in this embodiment, by adopting a short-circuit emitter structure, under the structural action of the contact electrode 4 and the strip-shaped region 5, the off-state voltage rising rate of the thyristor main body is improved, meanwhile, the on-time and the transient forward voltage drop have no obvious change, and the thyristor has at least four regions with alternately opposite conductive types, including an external emission region and an internal region, wherein the external emission region is divided into a plurality of parts, the parts of the internal region extend to the outer surface of the emission region between the parts of the emission region, the parts of the internal region are mutually connected and are strip-shaped, so that a continuous geometric pattern is formed, the structure is reasonable, the design is ingenious, and the operation is more stable.

Referring to fig. 1-2, the N2 conductive layers 3 are isolated from each other by the interconnected long, narrow stripe-shaped regions 5 of the P2 conductive regions 2.

Referring to fig. 1, the thyristor body is provided in a square surface configuration, and the control electrodes 1 are arranged in recesses at the corners of the thyristor body.

Referring to fig. 1, the strip-shaped regions 5 are arranged in a tree structure, and the strip-shaped regions 5 are emitted from opposite corners of the control electrode 1, extend to other regions in a symmetrical arrangement with the central trunk 5-1 toward the control electrode 1.

Referring to fig. 2, an emitter region is disposed at one side of the thyristor body, and the area of the emitter region is 1200mm, and the emitter region is composed of a plurality of N2 conductive layers 3.

Referring to fig. 1, the width of the central trunk stripe 5-1 is 1.2mm, the width of the remaining stripes is 0.8mm, and the total area of the stripe regions 5 is 2.2% of the area of the emitter region.

Working principle: the shorted emitter structure may be formed by using a lithography plate having the desired shorted emitter shape, preferably an oxidized and photoresist covered semiconductor wafer, in which the surface area of the oxide layer of the emitter region N2 conductive layer 3 (between the strips 5) is removed down to the P2 conductive region 2 in a subsequent lithography process, the remaining oxide layer portion forming a masking film of a subsequent diffusion process and being dimensioned such that the highly doped diffusion emitter regions arranged between the oxide layers are separated from each other by the strips 5, after which the oxide layer is removed and finally the surface of the semiconductor wafer is covered with a metallization layer serving as the contact electrode 4.

The foregoing is only a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any person skilled in the art, who is within the scope of the present utility model, should make equivalent substitutions or modifications according to the technical scheme of the present utility model and the inventive concept thereof, and should be covered by the scope of the present utility model.

Claims

1. The utility model provides a short-circuit emitter structure of thyristor, includes thyristor main part, P1 conductive area (6) and P2 conductive area (2), its characterized in that, be provided with high doping P+ conductive layer (7) on the surface of P1 conductive area (6), and the surface of P2 conductive area (2) is provided with high doping N2 conductive layer (3), extend to and be provided with strip district (5) on the surface of N2 conductive layer (3) between N2 conductive layer (3), N2 conductive layer (3) and strip district (5) all contact have contact electrode (4) that form the negative pole.

2. A shorted emitter structure of a thyristor according to claim 1, characterized in that the N2 conductive layers (3) are isolated from each other by the interconnected long, narrow strip-like regions (5) of the P2 conductive regions (2).

3. A shorted emitter structure of a thyristor according to claim 1, characterized in that the thyristor body is provided in the form of a square surface and the control electrode (1) is arranged in a recess at a corner of the thyristor body.

4. A shorted emitter structure of a thyristor according to claim 1, characterized in that the strip-like regions (5) are arranged in a tree-like structure, and that the strip-like regions (5) are emanating from opposite corners of the control electrode (1) towards the control electrode (1) and extend to other regions in a symmetrical arrangement with a central backbone strip (5-1).

5. A shorted emitter structure according to claim 1, wherein the thyristor body is provided with an emitter region on one side, and the emitter region has an area of 1200mm ² The emitter region is composed of a plurality of said N2 conductive layers (3).

6. A shorted emitter structure of a thyristor according to claim 4, characterized in that the width of the central trunk stripe (5-1) is 1.2mm, the width of the remaining stripes is 0.8mm, and the total area of the stripe-shaped regions (5) is 2.2% of the emitter region area.