CN219625868U - Unit assembly of semiconductor device and semiconductor device - Google Patents

Abstract

The utility model discloses a unit assembly of a semiconductor device and the semiconductor device. The unit assembly of the semiconductor device includes a chamber and an exhaust passage. One end of the exhaust channel is communicated with the chamber, and the other end is communicated with an exhaust communication pipeline of the semiconductor device. The exhaust channel is provided with an exhaust adjusting device, the exhaust adjusting device is provided with a plurality of exhaust holes and is adjustable to adjust the exhaust area of the exhaust adjusting device connected to the exhaust channel and adjust the air pressure of the cavity. The semiconductor device includes a plurality of unit components as described above. By the method, the defect of the semiconductor device in the process can be avoided.

Description

Unit assembly of semiconductor device and semiconductor device

Technical Field

The present utility model relates to the field of semiconductor manufacturing equipment, and in particular, to a unit assembly of a semiconductor device and a semiconductor device.

Background

In the related art, in the process of manufacturing a semiconductor device, the semiconductor device includes a plurality of unit components, for example, for a photolithography device, a photolithography process is classified into HMDS (hexamethyldisilazane) spraying, spin-coating, soft baking, alignment and exposure, post-exposure baking, development, film hardening baking, development inspection, and the like. After spin-coating of the photoresist, the wafer is baked to volatilize the solvent in the photoresist and enable the coated photoresist to be thinner. Existing lithographic apparatus including pre-bake comprise a plurality of unit components, e.g. heating units, but the lithographic apparatus only provides a separate tube exhaust gas regulating valve per layer, e.g. of the butterfly valve type, which can only be used for large scale regulation, not with sufficient accuracy to support the process requirements. That is, the existing semiconductor devices do not support the adjustment of the exhaust gas of the individual cell assemblies, affecting the pressure stability within the individual cell assemblies, thereby causing the integrated circuits to be prone to defects.

Disclosure of Invention

The utility model mainly solves the technical problem of providing a unit assembly of semiconductor equipment and the semiconductor equipment, which can adjust the small proportion of a single chamber aiming at the unstable air pressure phenomenon of the chamber of the semiconductor equipment.

In order to solve the technical problems, the utility model adopts a technical scheme that: a unit assembly of a semiconductor device is provided. The unit assembly of the semiconductor device includes a chamber and an exhaust passage. One end of the exhaust channel is communicated with the chamber, and the other end is communicated with an exhaust communication pipeline of the semiconductor device. The exhaust channel is provided with an exhaust adjusting device, the exhaust adjusting device is provided with a plurality of exhaust holes, and the exhaust adjusting device can adjust the accuracy of 1Pa so as to adjust the exhaust area of the exhaust adjusting device connected into the exhaust channel and adjust the air pressure of the cavity.

The utility model adopts another technical scheme that: a semiconductor device is provided. The semiconductor device includes a plurality of unit components as described above.

The beneficial effects of the utility model are as follows: different from the prior art, through setting up exhaust adjusting device at the cavity of semiconductor device, be provided with a plurality of exhaust holes on this exhaust adjusting device, and exhaust adjusting device is adjustable to adjust exhaust adjusting device and insert the exhaust area in the exhaust passage, and then adjust the atmospheric pressure of cavity. Thus, the stable air pressure of the cavity is ensured, and the defect of the semiconductor device in the manufacturing process is avoided.

Drawings

FIG. 1 is a cross-sectional view of one embodiment of a semiconductor device of the present utility model;

FIG. 2 is a cross-sectional view of a lithographic cell assembly of the semiconductor apparatus shown in FIG. 1;

FIG. 3 is a top view of a first embodiment of an exhaust gas modulating device of the lithographic cell assembly of FIG. 2;

FIG. 4 is a top view of a second embodiment of an exhaust gas modulating device of the lithographic cell assembly of FIG. 2;

FIG. 5 is a top view of a third embodiment of an exhaust gas modulating device of the lithographic cell assembly of FIG. 2;

FIG. 6 is a top view of a fourth embodiment of an exhaust gas modulating device of the lithographic cell assembly of FIG. 2.

Reference numerals illustrate: 1000. a semiconductor device; 100. a unit assembly; 1. a chamber; 2. an exhaust passage; 3. an exhaust adjusting device 4 and an upper cover; 5, a lower cover; 6. a heating member; 7. a cover plate; 8. an inner chamber; 9. an exhaust pipe; 10. an exhaust connection port; 11. an exhaust connection; 21. a first exhaust pipe; 211. a first end of the first exhaust pipe; 212. a second end of the first exhaust pipe; 22. a second exhaust pipe; 221. a first end of the second exhaust pipe; 222. a second end of the second exhaust pipe; 31. an exhaust hole; 32. an exhaust gas adjusting substrate; 321. an exhaust area; 322. a non-venting region; 323. a first exhaust gas adjustment substrate; 324. a second exhaust gas adjustment substrate; 325. the adjustment is quick; 51. a slit; 61. a bottom wall; 62. a sidewall; 63. a gap; 64. a thimble; 65. a thimble connecting rod; 71. and a through hole.

Detailed Description

The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. It will be apparent that the described embodiments are only some, but not all, embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. The terms "first," "second," and the like herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. The term "and/or" is herein merely an association relationship describing an associated object, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship. Further, "a plurality" herein means two or more than two.

The present inventors have found during research that photolithography is one of the important elements in the fabrication of semiconductor devices, and that a lithographic apparatus is an important semiconductor apparatus. The photoetching process comprises the processes of HMDS (hexamethyldisilazane) spraying, spin coating, soft baking, alignment and exposure, post-exposure baking, development, film hardening baking, development inspection and the like. After spin-coating of the photoresist, the wafer is baked to volatilize the solvent in the photoresist and enable the coated photoresist to be thinner. In the liquid photoresist, the solvent component accounts for 65% -85%. Although the liquid photoresist has become a solid film after spin coating, it still contains 10% -30% of solvent. The solvent can volatilize from the photoresist by performing the pre-baking at a higher temperature (the solvent content is reduced to about 5% after the pre-baking), thereby meeting the process requirements. Meanwhile, the pre-baking can also relieve the film stress formed by high-speed rotation, thereby improving the adhesiveness on the photoresist substrate. In the pre-baking process, the photoresist thickness is also thinned due to the volatilization of the solvent, and the thinning range is about 10-20%. However, the existing equipment for pre-baking, such as a photoresist coating developing machine, generally cannot precisely control the pressure in the chamber, so that the solvent after the photoresist is volatilized cannot be timely discharged out of the chamber or the speed of the solvent is too high, and the cleanliness or film thickness of the surface layer of the wafer is affected.

The following embodiments of the present utility model describe an exemplary structure of the semiconductor device 1000.

As shown in fig. 1, the semiconductor apparatus 1000 includes a plurality of unit modules 100. The semiconductor apparatus 1000 includes a lithographic apparatus, which may be, for example, a coating and developing machine, for a pre-bake process of a wafer. The semiconductor apparatus 1000 may be configured to include a plurality of layers of devices arranged in parallel at intervals, each layer of devices being provided with a plurality of unit modules 100 parallel side by side and spaced apart from each other. The cell assembly 100 includes a heating unit of a lithographic apparatus. For example, the unit assembly 100 is a heating unit of a coating and developing machine. The semiconductor device 1000 is provided in a 3-row and 5-column structure, and thus can accommodate 15 unit modules. In one embodiment, the semiconductor apparatus 1000 is a lithographic apparatus and the unit assembly 100 is a heating unit of the lithographic apparatus. In this embodiment, each unit assembly 100 may be used in addition to a pre-Bake process, a post-exposure Bake (Post Exposure Bake), a Hard Bake (Hard bak), or the like, which requires heating of the wafer. Wherein, the post-exposure baking is performed by heating, so that the photochemical reaction is fully completed. The photosensitive component generated in the exposure process can be diffused under the action of heating and chemically reacts with the photoresist, so that the photoresist material which is hardly dissolved in the developing liquid is changed into the material which is dissolved in the developing liquid, and the patterns which are dissolved and not dissolved in the developing liquid are formed in the photoresist film. The hard bake is such that after development, the photoresist absorbs some of the moisture due to contact with the wafer, which is detrimental to subsequent processes such as wet etching, and thus requires that excess moisture be driven out of the photoresist by the hard bake. The following embodiments are described with respect to a lithographic apparatus as the semiconductor apparatus 1000, however, it will be understood by those skilled in the art that the semiconductor apparatus 1000 of the present utility model may be other types of semiconductor apparatuses.

The following embodiments of the present utility model describe an exemplary structure of the unit assembly 100 of the semiconductor device.

As shown in fig. 2, the unit assembly 100 of the semiconductor device includes a chamber 1 and an exhaust passage 2. In an embodiment of the utility model, the semiconductor apparatus 1000 is a lithographic apparatus and the unit assembly 100 is a heating unit of the lithographic apparatus. Wherein the chamber 1 is used for receiving and heating wafers. The exhaust passage 2 is used to exhaust the gas in the chamber 1.

Referring to fig. 2 in combination with fig. 1, one end of the exhaust passage 2 communicates with the chamber 1, and the other end communicates with an exhaust communication pipe 200 of the semiconductor device. The exhaust passage 2 is provided with an exhaust adjusting device 3, the exhaust adjusting device 3 is provided with a plurality of exhaust holes 31, and the exhaust adjusting device 3 can be adjusted to adjust the exhaust area of the exhaust adjusting device 3 which is connected into the exhaust passage 2 and adjust the air pressure of the chamber 1. In the process of pre-baking the wafer, since the photoresist coated on the surface of the wafer contains a large amount of organic solvent, if the photoresist is not timely discharged, the organic solvent suspended in the chamber 1 is continuously condensed into a liquid state after heating is finished and is attached to the surface layer of the wafer, so that pollution is caused and the next exposure process can be influenced. On the other hand, if the organic solvent in the chamber 1 is discharged too fast, the volatilization speed of the photoresist in the area of the exhaust channel 2 close to the surface layer of the wafer is greater than that in the area far away from the exhaust channel 2, so that the film thickness of the photoresist on the surface layer of the wafer is uneven, and the next exposure process is affected. Therefore, the exhaust area in the exhaust channel 2 is controllable by operating the exhaust adjusting device 3, so that the air pressure of the chamber 1 can be accurately adjusted, the volatilization speed of the organic solvent in the chamber 1 is stable, and the quality of the wafer is ensured to meet the standard.

Optionally, an air extracting device (not shown in the figure) is connected to the other end of the exhaust communication pipeline 200, and the air extracting device is used for sucking the air in the chamber 1, so that the volatile organic compounds in the air are not retained on the surface of the wafer, and the defect that the volatile organic compounds are re-condensed into the surface layer of the wafer is avoided.

With continued reference to fig. 2, the unit assembly 100 of the semiconductor device may specifically include an upper cover 4 and a lower cover 5, where the upper cover 4 is covered on the lower cover 5, and an enclosed internal space is the chamber 1.

Further, a heating element 6 and a cover plate 7 may be provided in the chamber 1. The heating element 6 is used for receiving a wafer, and a heating circuit (not shown) is arranged on the outer side of the heating element, and the heating element generates heat in an electrified state so that a solvent contained in the photoresist covered on the wafer is volatilized after the wafer is heated. The heating element 6 comprises a bottom wall 61 and side walls 62. The cover plate 7 covers the side wall 62 and encloses an inner chamber 8 with the side wall 62. A gap 63 is formed between the cover 7 and the outer periphery of the side wall 62. The inner chamber 8 communicates with the chamber 1 through a gap 63.

Wherein the bottom wall 61 is adapted to receive and heat a wafer. Optionally, the bottom wall 61 may be provided with a bottom hole 511, and a plurality of pins 64 may be further disposed at the lower end of the bottom wall 61. The pins 64 are used to jack up or down the wafer to send the wafer to the next processing step. The end of the thimble 64 remote from the bottom hole 511 may also be provided with a thimble connection rod 65. The ejector pin connecting rod 65 may also be connected to a motor (not shown), and the motor drives the ejector pin connecting rod 65 to move up and down along the axial direction of the bottom hole 511, so as to drive the ejector pin 64 to move up and down, so that the wafer is lifted up or down.

Further, an exhaust pipe 9 may be provided in the chamber 1. The cover plate 7 may be provided with a through hole 71 in a direction toward the heating member 6. One end of the exhaust pipe 9 communicates with the through hole 71, and the other end communicates with the exhaust passage 2. Thus, after the wafer is heated by the heating member 6 in the energized state, the volatilized organic solvent flows outward to the exhaust pipe 9 through the through hole 71 and further flows to the exhaust passage 2 until merging into the exhaust communication pipe 200.

Optionally, an exhaust connection port 10 may also be provided in the chamber 1. One side of the exhaust connection port 10 communicates with the connection pipe 9 so that the gas in the connection pipe 9 can pass through. One side of the exhaust connection port 10 communicates with the exhaust passage 2 so that the gas that enters the exhaust connection port 10 can enter the exhaust passage 2.

The semiconductor apparatus 1000 is located in a clean room conforming to a clean class, and a ventilator is provided in the clean room, and the ventilator continuously transmits air conforming to a standard to the clean room, and makes a pressure in the clean room greater than a pressure outside the clean room. The chamber 1 communicates with the air of the clean room. For example, in the present embodiment, a plurality of slits 51 may be formed on the side of the lower cover 5 facing the heating member 6, so that the chamber 1 communicates with the clean room, and thus the inner chamber 8 indirectly communicates with the air of the clean room. In other embodiments, slits 51 may be provided at other locations on the lower cover 5 or otherwise allow the chamber 1 to communicate with the clean room atmosphere. For example, the degree of the close fitting between the upper cover 4 and the lower cover 5 is not tight. In a state where the ventilator is continuously operated, each unit assembly 100 is ensured to be in a clean room with cleanliness conforming to standards, and the pre-baking process of the wafer is ensured not to be affected by impurities such as dust particles.

Specifically, the exhaust passage 2 communicates with the through hole 71, so that the wafer is heated, and the solvent contained in the photoresist coated thereon volatilizes and then flows out to the exhaust passage 2 through the exhaust pipe 9 to be discharged. Under the action of the ventilator, air in the clean room enters the chamber 1 through the slit 51 and then enters the inner chamber 8 through the gap 63, so that the volatilized solvent is driven to flow out to the exhaust pipe 9 to the exhaust channel 2, and the volatilized solvent is further discharged under the suction of the air suction device communicated with the exhaust channel 2. Thus, a completed air flow circulation is formed, so that the air above the wafer flows away in time, and the cleanliness of the environment where the wafer is located can be ensured.

The cell assembly 100 may also be provided with a pressure sensor (not shown in the figures) for measuring the pressure inside the chamber 1. When the pressure in the chamber 1 is lower than the preset pressure, the solvent unfavorable for volatilization flows toward the exhaust passage 2, so that the area of the exhaust adjusting device 33 capable of exhausting can be controlled, the area capable of exhausting is reduced, and the pressure in the chamber 1 is increased, so that the solvent favorable for volatilization flows toward the exhaust passage 2. When the pressure in the chamber 1 is higher than the preset pressure, the area of the air-exhausting regulator 3 that can be exhausted can be controlled to enlarge, so that the volatilized solvent can flow towards the air-exhausting channel 2. For example, the preset pressure of the corresponding chamber 1 may be set to be between 10pa and 20pa according to the volume of the unit assembly 100, and the positive and negative deviations of 1pa have a limited influence on the film thickness of the wafer due to the solvent evaporation rate, while the positive and negative deviations of more than 1pa have an adverse influence on the film thickness uniformity of the wafer. For example, when the solvent evaporation rate is too high, the film thickness of the exhaust passage 2 at the position corresponding to the wafer surface is small, and the film thickness around it is large. Therefore, the pressure of the chamber 1 needs to be controlled within a range of plus or minus 1pa of the preset pressure to avoid such an influence.

As shown in fig. 2 and 3, wherein fig. 3 is a top view of a first embodiment of an exhaust gas modulating device of the lithographic cell assembly described in fig. 2. In this embodiment, the exhaust gas adjusting device 3 includes an exhaust gas adjusting substrate 32 and a plurality of exhaust holes 31 provided on the exhaust gas adjusting substrate 32. Wherein the exhaust adjusting substrate 32 includes an exhaust region 321 and a non-exhaust region 322. A plurality of exhaust holes 31 are distributed in the exhaust region 321. For example, the exhaust adjusting substrate 32 may have a rectangular shape, the exhaust area 321 is located in an inner peripheral area of the exhaust adjusting substrate 32, the shape thereof is rectangular, and the non-exhaust area 322 surrounds the exhaust area 321, and the shape thereof is also rectangular. Wherein the exhaust holes 31 are spaced apart in the width direction of the exhaust region 321. The position of the exhaust gas regulating device 3 is adjustable relative to the exhaust passage 2 to adjust the ratio of the exhaust area 321 and the non-exhaust area 322 located in the exhaust passage 2, thereby changing the exhaustable area of the exhaust gas regulating device 3 that is accessed into the exhaust passage 2. When the pressure sensor tests that the pressure in the chamber 1 exceeds the preset pressure within 1pa, the ratio of the exhaust area 321 to the non-exhaust area 322 in the exhaust channel 2 is regulated, so that the area of the exhaust area 321 is increased, and therefore the volatile solvent in the chamber 1 is more easily discharged towards the exhaust channel 2, and the defect that the volatile solvent is re-condensed on the surface of the wafer is avoided. When the pressure sensor tests that the pressure in the chamber 1 is smaller than the range of 1pa of the preset pressure, the proportion of the exhaust area 321 and the non-exhaust area 322 in the exhaust channel 2 is regulated, so that the area of the exhaust area 321 is reduced, the flow speed of the volatile solvent in the chamber 1 is reduced, and the problem that the wafer film thickness is uneven due to too fast volatilization of the volatile solvent is avoided.

FIG. 4 is a top view of a second embodiment of the exhaust gas modulating device of the lithographic cell assembly of FIG. 2, as shown in FIG. 4. In this embodiment, the exhaust gas adjusting device 3 includes an exhaust gas adjusting substrate 32 and a plurality of exhaust holes 31 provided on the exhaust gas adjusting substrate 32. Wherein the exhaust adjusting substrate 32 includes a plurality of exhaust areas 321. A plurality of exhaust holes 31 are distributed in each exhaust region 321. The arrangement density, and/or the pore size of the exhaust holes 31 in each exhaust region 321 are not uniform. In this embodiment, the exhaust adjusting substrate 32 is rectangular, the exhaust areas 321 are disposed at intervals in the width direction of the exhaust adjusting substrate 32, and the exhaust holes 31 are also disposed at intervals in the width direction of the exhaust adjusting substrate 32. For example, the exhaust gas adjusting substrate 32 includes 3 exhaust gas areas 321, and each exhaust gas area 321 may be rectangular. Wherein, 3 rows of exhaust holes 31 are arranged in any exhaust area 321, each row of exhaust holes 31 in the exhaust area 321 is round and has the same area, but the apertures of the exhaust holes 31 in different exhaust areas 321 are different. For example, the aperture of the exhaust hole 31 in the 3 exhaust areas 321 sequentially increases along the length direction of the exhaust adjustment substrate 32. In other embodiments, the shape of the exhaust gas regulating substrate 32 may be circular, diamond-shaped, etc.; the shape of the exhaust hole 31 may be rectangular, diamond-shaped, etc.; and the number of the exhaust areas 321 may be 2, 4, 5, etc.; the number of the exhaust holes 31 provided for each exhaust region 321 may be different, and is not particularly limited.

FIG. 5 is a top view of a third embodiment of the exhaust gas modulating device of the lithographic cell assembly depicted in FIG. 2, as shown in FIG. 5. The exhaust gas regulating device 3 includes at least two exhaust gas regulating substrates 32 stacked together, and a plurality of exhaust holes 31 are provided on at least one exhaust gas regulating substrate 32, respectively. Wherein at least two exhaust gas adjusting substrates 32 are relatively adjustable to adjust the area of the exhaust gas adjusting device 3 that can be exhausted into the exhaust passage 2. For example, the number of at least two exhaust gas regulating substrates 32 is 2, 3, 4, or the like.

In this embodiment, the exhaust gas adjustment device 3 includes a first exhaust gas adjustment substrate 323 and a second exhaust gas adjustment substrate 324 that are stacked together. A plurality of plural types of exhaust holes 31 are respectively provided on each exhaust adjusting substrate 32, and the aperture sizes of each type of exhaust holes 31 are different from each other. In this embodiment, the first and second exhaust regulating substrates 323 and 324 are each circular. For example, the vent holes 31 located at the center of the vent adjusting substrate 32 are circular and have the largest area, the vent holes 31 are arranged at intervals along the radial direction of the circular vent adjusting substrate 32, each set of vent holes 31 is located on the same diameter, but 3 sets of smaller vent holes 31 are arranged between every two adjacent sets of larger vent holes 31. Wherein the first exhaust adjusting substrate 323 and the second exhaust adjusting substrate 324 are relatively adjustable to adjust the area of the exhaust adjusting device 3 that can exhaust the air in the exhaust passage 2. For example, the first exhaust gas regulating substrate 323 may be horizontally moved with respect to the radial direction of the second exhaust gas regulating substrate 324 such that the total exhaust gas area becomes smaller when the first exhaust gas regulating substrate 323 is laminated to the second exhaust gas regulating substrate 324, and becomes larger when the first exhaust gas regulating substrate 323 is at least partially separated from the second exhaust gas regulating substrate 324. In this way, when the first exhaust adjusting substrate 323 is fixed to the exhaust passage 2 and the second exhaust adjusting substrate 324 is relatively moved, more accurate pressure control is achieved. In other embodiments, the second exhaust adjusting substrate 324 may be fixed to the exhaust channel 2, and the first exhaust adjusting substrate 323 may be horizontally moved relative to or away from the second exhaust adjusting substrate 324, or the first exhaust adjusting substrate 323 and the second exhaust adjusting substrate 324 may be simultaneously operated to relatively move to control the pressure of the chamber 1. In other embodiments, the first exhaust adjusting substrate 323 and the second exhaust adjusting substrate 324 may be configured in other sizes and shapes, for example, each of the first exhaust adjusting substrate 323 and the second exhaust adjusting substrate 324 may be polygonal, and the sizes thereof may be configured according to the cross-sectional areas of the exhaust passages 2, so as to adapt to the adjustment requirements of the exhaust passages 2 with different sizes. The vent hole 31 may be formed in other shapes, such as an oval shape, and is not particularly limited.

Alternatively, in this embodiment, adjustment blocks 325 are provided at edges of the first and second exhaust adjustment substrates 323 and 324, respectively, to relatively adjust the first and second exhaust adjustment substrates 323 and 324 by the adjustment blocks 325. The adjustment blocks 325 are provided at the edges of the first and second exhaust adjustment substrates 323 and 324, respectively, to facilitate the user's operation.

FIG. 6 is a top view of a fourth embodiment of the exhaust gas modulating device of the lithographic cell assembly of FIG. 2, as shown in FIG. 6. The exhaust gas adjustment device 3 includes a first exhaust gas adjustment substrate 323 and a second exhaust gas adjustment substrate 324 that are stacked together. The first exhaust adjusting substrate 323 is provided with a plurality of exhaust holes 31. The second exhaust adjusting substrate 324 is not provided with the exhaust hole 31. Wherein the first exhaust adjusting substrate 323 and the second exhaust adjusting substrate 324 are relatively adjustable to adjust the area of the exhaust adjusting device 3 that can exhaust gas into the exhaust passage 2. For example, when the first and second exhaust adjustment substrates 323 and 324 are respectively rectangular, the second exhaust adjustment substrate 324 may perform a shrinking motion with respect to the length direction of the first exhaust adjustment substrate 323 such that the total exhaust area becomes smaller when the second exhaust adjustment substrate 324 is laminated to the first exhaust adjustment substrate 323, and becomes larger when the second exhaust adjustment substrate 324 is at least partially separated from the first exhaust adjustment substrate 323. In this way, when the first exhaust adjusting substrate 323 is fixed to the exhaust passage 2 and the second exhaust adjusting substrate 324 is relatively moved, more accurate pressure control is achieved. In other embodiments, the first and second exhaust adjusting substrates 323 and 324 may be operated simultaneously to move relative to each other to control the pressure of the chamber 1. In other embodiments, the first and second exhaust adjusting substrates 323 and 324 may be provided in other sizes and shapes, and the exhaust hole 31 may be provided in other shapes, without being limited thereto.

With continued reference to fig. 6, in this embodiment, adjustment blocks 325 are provided at edges of the first and second exhaust adjustment substrates 323 and 324, respectively, so that the first and second exhaust adjustment substrates 323 and 324 are relatively adjusted by the adjustment blocks 325. The adjustment blocks 325 are provided at the edges of the first and second exhaust adjustment substrates 323 and 324, respectively, to facilitate the user's operation.

In addition, in this embodiment, the shape of the exhaust hole 31 may be different, and may be, for example, elliptical, diamond-shaped, other regular or irregular shapes. Since the pressure in the chamber 1 is maintained within plus or minus 1pa of the preset pressure, the pressure in the chamber 1 can be more precisely controlled by providing at least two exhaust adjusting substrates 32, so that the flow rate of the gas therein is stabilized.

As shown in fig. 2, the exhaust passage 2 may include a first exhaust pipe 21 and a second exhaust pipe 22. The first end 211 of the first exhaust pipe 21 communicates with the chamber 1, and the first end 221 of the second exhaust pipe 22 communicates with the exhaust communication pipe 200 of the semiconductor apparatus 1000. The exhaust gas adjusting device 3 is disposed between the second end 212 of the first exhaust pipe 21 and the second end 222 of the second exhaust pipe 22. The aperture of the first exhaust pipe 21 is smaller than the aperture of the second exhaust pipe 22. Wherein the other end of the second exhaust pipe 22 is connected to an air extracting device. By setting the aperture of the first exhaust pipe 21 smaller than the aperture of the second exhaust pipe 22, stable outflow of the gas in the chamber 1 is facilitated.

As shown in fig. 2, the unit assembly 100 may further include an exhaust connection 11. Wherein the second end 222 of the second exhaust pipe 22 is mounted to the exhaust connection 11. The exhaust gas regulating device 3 is placed on the exhaust connection 11. Wherein the shape and size of the exhaust connection 11 may be configured according to the exhaust gas adjusting device 3. For example, when the exhaust gas adjusting device 3 is rectangular, the shape of the exhaust gas connecting member 11 is also rectangular, and when the exhaust gas adjusting device 3 is circular, the shape of the exhaust gas connecting member 11 is also circular. The provision of the exhaust connection 11 facilitates the reception of the exhaust gas regulating device 3 so that it is fixed against displacement.

In summary, by providing the exhaust gas adjusting device 3 in the chamber 1 of the unit assembly 100 of the semiconductor device 1000, the exhaust gas adjusting device 3 is provided with a plurality of exhaust holes 31, and the exhaust gas adjusting device 3 is adjustable to adjust the exhaustion-possible area of the exhaust gas adjusting device 3 into the exhaust passage 2, thereby adjusting the air pressure of the chamber 1. This ensures stable air pressure in the chamber 1 and avoids defects in the semiconductor device during manufacture.

The foregoing description is only illustrative of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present utility model.

Claims (11)

1. A cell assembly of a semiconductor device, comprising:

a chamber;

an exhaust passage having one end connected to the chamber and the other end connected to an exhaust communication line of the semiconductor device;

the exhaust channel is provided with an exhaust adjusting device, the exhaust adjusting device is provided with a plurality of exhaust holes, and the exhaust adjusting device can be adjusted to adjust the exhaust area of the exhaust adjusting device connected to the exhaust channel, and adjust the air pressure of the cavity.

2. The cell assembly of claim 1, wherein the cell assembly comprises a plurality of cells,

the exhaust adjusting device comprises an exhaust adjusting substrate and a plurality of exhaust holes arranged on the exhaust adjusting substrate, wherein the exhaust adjusting substrate comprises an exhaust area and a non-exhaust area, the exhaust holes are distributed in the exhaust area, the position of the exhaust adjusting device relative to the exhaust channel is adjustable so as to adjust the proportion of the exhaust area and the non-exhaust area in the exhaust channel, and therefore the exhaust area of the exhaust adjusting device connected into the exhaust channel is changed; or alternatively

The exhaust adjusting device comprises an exhaust adjusting substrate and a plurality of exhaust holes arranged on the exhaust adjusting substrate, wherein the exhaust adjusting substrate comprises a plurality of exhaust areas, a plurality of exhaust holes are distributed in each exhaust area, the arrangement density and/or the pore size of each exhaust hole in each exhaust area are inconsistent, and the position of the exhaust adjusting device is adjustable relative to the exhaust channel so as to change and adjust the exhaust area in the exhaust channel, thereby changing the area of the exhaust adjusting device which is connected into the exhaust channel.

3. The cell assembly of claim 1, wherein the cell assembly comprises a plurality of cells,

the exhaust adjusting device comprises at least two exhaust adjusting substrates which are overlapped together, and a plurality of exhaust holes are respectively formed in at least one exhaust adjusting substrate, wherein the at least two exhaust adjusting substrates can be adjusted relatively so as to adjust the area of the exhaust adjusting device which is connected into the exhaust channel.

4. A unit assembly according to claim 3, characterized in that,

the exhaust adjusting device comprises a first exhaust adjusting substrate and a second exhaust adjusting substrate which are overlapped together, wherein a plurality of exhaust holes of various types are respectively formed in each exhaust adjusting substrate, the pore sizes of the exhaust holes of various types are different from each other, and the first exhaust adjusting substrate and the second exhaust adjusting substrate can be adjusted relatively so as to adjust the exhaust area of the exhaust adjusting device which is connected into the exhaust channel.

5. A unit assembly according to claim 3, characterized in that,

the exhaust adjusting device comprises a first exhaust adjusting substrate and a second exhaust adjusting substrate which are overlapped together, wherein a plurality of exhaust holes are formed in the first exhaust adjusting substrate, the second exhaust adjusting substrate is not provided with the exhaust holes, and the first exhaust adjusting substrate and the second exhaust adjusting substrate can be adjusted relatively so as to adjust the exhaust area of the exhaust adjusting device which is connected into the exhaust channel.

6. The cell assembly of claim 4 or 5, wherein,

and adjusting blocks are respectively arranged at the edges of the first exhaust adjusting substrate and the second exhaust adjusting substrate so as to relatively adjust the first exhaust adjusting substrate and/or the second exhaust adjusting substrate through the adjusting blocks.

7. The cell assembly of claim 1, wherein the cell assembly comprises a plurality of cells,

the exhaust passage comprises a first exhaust pipe and a second exhaust pipe, the first end of the first exhaust pipe is communicated with the cavity, the first end of the second exhaust pipe is communicated with an exhaust communication pipeline of the semiconductor device, and the exhaust adjusting device is arranged between the second end of the first exhaust pipe and the second end of the second exhaust pipe.

8. The cell assembly of claim 7, further comprising:

and an exhaust connection member, wherein the second end of the second exhaust pipe is mounted on the exhaust connection member, and the exhaust adjusting device is placed on the exhaust connection member.

9. The cell assembly of claim 7, wherein the cell assembly comprises a plurality of cells,

the aperture of the first exhaust pipe is smaller than that of the second exhaust pipe.

10. The cell assembly of claim 1, wherein the cell assembly comprises a plurality of cells,

the semiconductor apparatus includes a lithographic apparatus, and the unit assembly includes a heating unit of the lithographic apparatus.

11. A semiconductor device comprising a plurality of unit modules, wherein each unit module is a unit module according to any one of claims 1 to 9.